High temperature resistant memristor based on two-dimensional covalent crystal and preparation method thereof

Abstract

A high temperature resistant memristor comprises a bottom electrode, a dielectric and a top electrode, wherein the dielectric is a two-dimensional covalent crystal material or a two-dimensional covalent crystal material doped with oxygen or sulfur which has (1) the two-dimensional covalent crystal material or the two-dimensional covalent crystal material doped with oxygen or sulfur is adopted as the dielectric; (2) a memristor prepared by utilizing relatively high thermal stability of a lattice structure of two-dimensional transition metal; and (3) the high temperature resistant memristor.

Claims

1. A high temperature resistant memristor based on two-dimensional covalent crystal, which is characterized in that: the high temperature resistant memristor comprises a bottom electrode, a dielectric and a top electrode, wherein the dielectric is a two-dimensional covalent crystal material or a two-dimensional covalent crystal material doped with oxygen or sulfur; wherein the two-dimensional covalent crystal material is not soluble in water, acetone and photoresist; does not chemically react with acetone or photoresist; and has relatively high stability at high temperature.

2. The high temperature resistant memristor of claim 1, which is characterized in that: the two-dimensional covalent crystal material maintains original crystal structure at a temperature for 500 C. or higher.

3. The high temperature resistant memristor of claim 2, which is characterized in that: the two-dimensional covalent crystal material is transition metal chalcogenide or black phosphorus.

4. The high temperature resistant memristor of claim 1, which is characterized in that: the doping amount of oxygen or sulfur is x, and x is more than 0% and less than 50%.

5. The high temperature resistant memristor of claim 4, which is characterized in that: the doping amount of oxygen or sulfur is that x is more than or equal to 10% and less than or equal to 20%.

6. The high temperature resistant memristor of claim 1, which is characterized in that: the dielectric is prepared by adopting a method of chemical vapor deposition, chemical vapor transportation or molecular beam epitaxy.

7. The high temperature resistant memristor of claim 1, which is characterized in that: the bottom electrode and the top electrode are made by adopting an inert metal material, conducting material or semimetal type two-dimensional covalent crystal material.

8. The high temperature resistant memristor of claim 7, which is characterized in that: the inert metal material is platinum, gold or palladium.

9. The high temperature resistant memristor of claim 7, which is characterized in that: the conducting material is indium tin oxide or titanium nitride.

10. The high temperature resistant memristor of claim 7, which is characterized in that: the semimetal type two-dimensional covalent crystal material is graphene.

11. A method for preparing a high temperature resistant memristor comprising the following steps: (1) preparing a bottom electrode on a substrate by adopting a physical vapor deposition or magnetron sputtering method when an inert metal material or a flexible conducting material is adopted as the bottom electrode and a top electrode, preparing a dielectric by adopting a method of chemical vapor deposition, chemical vapor transportation or molecular beam epitaxy, transferring the dielectric to the bottom electrode, and then preparing the top electrode; and (2) preparing the bottom electrode and the top electrode by adopting a mechanical stripping method or a chemical vapor deposition method when a semimetal type two-dimensional covalent crystal material is adopted as the bottom electrode and the top electrode, transferring the bottom electrode to the substrate, preparing the dielectric by adopting the method of chemical vapor deposition, chemical vapor transportation or molecular beam epitaxy, transferring the dielectric to the bottom electrode, and then transferring the top electrode to the dielectric.

12. A method for preparing a high temperature resistant memristor comprising the following steps: (1) preparing a bottom electrode on a substrate by adopting a physical vapor deposition or magnetron sputtering method when an inert metal material or a flexible conducting material is adopted as the bottom electrode and a top electrode, preparing a precursor of a two-dimensional covalent crystal material by adopting a method of chemical vapor deposition, chemical vapor transportation or molecular beam epitaxy, then doping the two-dimensional covalent crystal material by using a doping process to obtain a dielectric, transferring the dielectric to the bottom electrode, and then preparing the top electrode; and (2) preparing the bottom electrode and the top electrode by adopting a mechanical stripping method or the method of chemical vapor deposition when a semimetal type two-dimensional covalent crystal material is adopted as the bottom electrode and the top electrode, transferring the bottom electrode to the substrate, preparing the precursor of the two-dimensional covalent crystal material by adopting the method of chemical vapor deposition, chemical vapor transportation or molecular beam epitaxy, then doping the two-dimensional covalent crystal material by using the doping process to obtain a dielectric, transferring the dielectric to the bottom electrode and then transferring the top electrode to the dielectric.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 is a structural diagram of the device of the present invention;

(2) FIG. 2 is an optical microscope photograph and a measuring circuit diagram of a graphene electrode device in an embodiment 1 of the present invention;

(3) FIG. 3 is a switching curve graph of the graphene electrode device at different temperatures in the embodiment 1 of the present invention;

(4) FIG. 4 is a state maintaining time diagram of high and low resistance states of the graphene electrode device at the temperatures of 340 C. and 160 C.;

(5) FIG. 5 is an optical microscope picture and a measuring circuit diagram of a gold electrode device in an embodiment 2 of the present invention;

(6) FIG. 6 is a switching curve graph of the gold electrode device at different temperatures in the embodiment 2 of the present invention;

(7) FIG. 7 is a state maintaining time diagram of high and low resistance states of the gold electrode device at the temperature of 340 C.;

(8) FIG. 8 is a switching curve schematic diagram of devices in embodiments 3-23 at the temperature of 300 C.; and

(9) FIG. 9 is a state maintaining time schematic diagram of high and low resistance states of devices in embodiments 3-23 at the temperature of 300 C.

DETAILED DESCRIPTION OF THE INVENTION

(10) The technical scheme of the present invention will be further illustrated in combination with drawings in the followings.

Embodiment 1

(11) (1) Preparation of a graphene bottom electrode: stripping a graphene film to the surface of an SiO.sub.2/Si substrate by using a mechanical stripping method, wherein the film thickness is about 10 nm; then coating the substrate with a layer of photoresist in a spinning way by using a spin coater at the speed of 4000 r/min, wherein PMMA is adopted for the photoresist of the embodiment; exposing a stripe electrode pattern (the required electrode pattern is covered by photoresist, the remaining part is exposed, and the stripe width is 1 micrometer) in a designated position on graphene by using a method of electron beam lithography, and developing the pattern by using a PMMA developing solution; then etching redundant graphene by using a manner of plasma etching, wherein graphene with required electrode pattern covered by photoresist is left; putting the substrate into an acetone solution, and dissolving residual photoresist with acetone, wherein what is left on the substrate is a stripe graphene film electrode; and finally, transferring the prepared semimetal two-dimensional covalent crystal film electrode to the substrate, wherein the transferring method can refer to a method disclosed by the document Graphene transfer: key for applications of Junmo Kang et al (Nanoscale, 2012, 4, 5527).

(12) (2) Preparation and transfer of oxygen doped molybdenum disulfide dielectric: firstly growing a molybdenum disulfide block material by using a method of chemical vapor transmission (CVT); then stripping a molybdenum disulfide film from the growing molybdenum disulfide block material to the surface of the SiO.sub.2/Si substrate by using a mechanical stripping method, wherein the thickness of the film is about 40 nm; putting the molybdenum disulfide film to a heating table of 160 C. in the air, taking down after 1.5 hours, and transferring the oxygen doped molybdenum disulfide film on the substrate to the graphene bottom electrode prepared in step (1), wherein the transferring method can refer to a method disclosed by the document Graphene transfer: key for applications of Junmo Kang et al (Nanoscale, 2012, 4, 5527).

(13) (3) Preparation and transfer of a graphene top electrode: the preparation method of the graphene top electrode is the same as that in step (1), and after the preparation is completed, the prepared graphene film electrode is transferred to an oxygen doped molybdenum disulfide dielectric layer prepared in step (2) to be used as the top electrode, so as to obtain the memristor of the structure of graphene/oxygen doped molybdenum disulfide/graphene. In the embodiment, the doping amount of oxygen is 15%, that is, 15%=oxygen atom number/(oxygen atom number+sulfur atom number). The structural diagram of the device is as shown in FIG. 1, the two-dimensional covalent crystal material is located in the middle of the device and sandwiched by a top electrode 3 and a bottom electrode 1 to be used as a dielectric 2, so as to form a device of a sandwich structure.

(14) (4) Graphene bottom electrode and top electrode in the device prepared in step (3) are led out by a metal film electrode via a method of electron beam lithography and electron beam evaporation, so as to facilitate subsequent integration and measurement. The optical microscope photograph and the measuring circuit diagram of the device of the embodiment are as shown in FIG. 2. The switching curve graph of the device at different temperatures in the embodiment is as shown in FIG. 3, a state maintaining time diagram of high and low resistance states of the device at the temperatures of 340 C. and 160 C. is as shown in FIG. 4, it can be known from FIG. 3 and FIG. 4 that a memristor of a sandwich structure using a two-dimensional covalent crystal material can steadily work at the temperature up to 340 C., thus creating a new record of the working temperature of the memristor (the higher record reported previously is 200 C.). The switching curve at a high temperature can still keep a shape almost the same as a curve at the room temperature, indicating that the memristor not only can adapt to high temperature, but also can adapt to severe temperature variation. Meanwhile, the memristor can still keep high and low resistance state maintaining time of relatively long time at the high temperature of 340 C., indicating that the memristor not only can be steadily switched at the high temperature, but also can maintain the high and low resistance state for a relatively long time, and thus being capable of effectively storing information at the high temperature, which further indicates the stability of the memristor at the high temperature.

(15) Measured by using a semiconductor device analyzer Agilent B1500A, at the temperature of 340 C., the device prepared according to the embodiment has the switching life reaching 1000 times, and the state maintaining time reaching longer than 10.sup.5 s; and the prepared high temperature resistant memristor has switching life reaching 10.sup.7 times maximally, switching speed reaching shorter than 10.sup.7 s, and state maintaining time reaching longer than 10.sup.5 s.

(16) In conclusion, the memristor prepared by adopting the method disclosed by the present invention has excellent high temperature resistant property.

Embodiment 2

(17) (1) Preparation of a gold bottom electrode: firstly coating the substrate with a layer of PMMA in a spinning way by using a spin coater at the speed of 4000 r/min, exposing a stripe electrode pattern (the required electrode pattern is covered by photoresist, the remaining part is exposed, and the stripe width is 1 micrometer) in a designated position on the substrate by using a method of electron beam lithography, and developing the pattern by using a developing solution; then growing a layer of gold film on the substrate by using a manner of electron beam evaporation, wherein the thickness of the film is about 40 nm; and finally, putting the substrate into an acetone solution, and dissolving residual PMMA photoresist with acetone, wherein the gold film on the surface of the redundant photoresist falls off from the substrate accordingly, and what is left on the substrate is a stripe graphene film electrode.

(18) (2) Preparation and transfer of oxygen doped molybdenum disulfide dielectric: firstly growing a molybdenum disulfide block material by using a method of chemical vapor transmission (CVT); then stripping a molybdenum disulfide film from the growing molybdenum disulfide block material to the surface of the SiO.sub.2/Si substrate by using a mechanical stripping method, wherein the thickness of the film is about 40 nm; putting the molybdenum disulfide film to a heating table of 160 C. in the air, taking down after 1.5 hours, and transferring the oxygen doped molybdenum disulfide film on the substrate to the graphene bottom electrode prepared in step (1), wherein the oxygen doping amount of the embodiment is 15%. The transferring method can refer to a method disclosed by the document Graphene transfer: key for applications of Junmo Kang et al (Nanoscale, 2012, 4, 5527).

(19) (3) Preparation of a gold top electrode: the preparation method of the gold top electrode is the same as that in step (1), and after preparation of the gold top electrode is completed, the memristor of a gold/oxygen doped molybdenum disulfide/gold structure can be obtained. The optical microscope photograph and the measuring circuit diagram of the device in the embodiment are as shown in FIG. 5.

(20) The switching curve graph of the device at different temperatures in the embodiment is as shown in FIG. 6, and a state maintaining time diagram of high and low resistance states of the device at the temperature of 340 C. in the embodiment is as shown in FIG. 7. It can be seen from FIG. 6 and FIG. 7 that a memristor of a sandwich structure using a two-dimensional covalent crystal material can steadily work at a temperature reaching 340 C. maximally, which creates a new record of the working temperature of the memristor (the higher record reported previously is 200 C.). The switching curve at a high temperature can still keep a shape almost the same as a curve at the room temperature, indicating that the memristor not only can adapt to high temperature, but also can adapt to severe temperature variation. Meanwhile, the memristor can still keep high and low resistance state maintaining time of relatively long time at the high temperature of 340 C., indicating that the memristor not only can be steadily switched at the high temperature, but also can maintain the high and low resistance state for a relatively long time, and thus being capable of effectively storing information at the high temperature, which further indicates the stability of the memristor at the high temperature. In conclusion, the memristor prepared by adopting the method disclosed by the present invention has excellent high temperature resistant property.

Embodiment 3

(21) (1) The preparation of a graphene bottom electrode is the same as embodiment 1.

(22) (2) Preparation and transfer of an oxygen doped molybdenum disulfide dielectric: growing an oxygen doped molybdenum disulfide film by using a method of chemical vapor deposition (CVD), wherein the thickness of the film is about 40 nm; and then transferring the growing oxygen doped molybdenum disulfide film to the graphene bottom electrode prepared in step (1), wherein the transferring method can refer to a method disclosed by the document Graphene transfer: key for applications of Junmo Kang et al (Nanoscale, 2012, 4, 5527).

(23) Steps (3)-(4) are the same as steps (3)-(4) of embodiment 1.

Embodiment 4

(24) (1) The preparation of a gold bottom electrode is the same as embodiment 2.

(25) (2) Preparation and transfer of an oxygen doped molybdenum disulfide dielectric: growing an oxygen doped molybdenum disulfide film by using a method of chemical vapor deposition (CVD), wherein the thickness of the film is about 40 nm; and then transferring the growing oxygen doped molybdenum disulfide film to the gold bottom electrode prepared in step (1), wherein the transferring method can refer to a method disclosed by the document Graphene transfer: key for applications of Junmo Kang et al (Nanoscale, 2012, 4, 5527).

(26) Step (3) is the same as step (3) of embodiment 2.

Embodiment 5

(27) (1) Preparation of a graphene bottom electrode is the same as embodiment 1.

(28) (2) Preparation and transfer of a tungsten disulfide dielectric: firstly growing a tungsten disulfide block material by using a method of chemical vapor transmission (CVT); then stripping a tungsten disulfide film from the growing tungsten disulfide block material to the surface of the SiO.sub.2/Si substrate by using a mechanical stripping method; then transferring the tungsten disulfide film on the substrate to the graphene bottom electrode prepared in step (1), wherein the transferring method can refer to a method disclosed by the document Graphene transfer: key for applications of Junmo Kang et al (Nanoscale, 2012, 4, 5527).

(29) (3) Preparation and transfer of a graphene top electrode: the preparation method of the graphene top electrode is the same as that in step (1), and after preparation of the graphene top electrode is completed, the prepared graphene film electrode is transferred to the graphene bottom electrode and the tungsten disulfide dielectric layer prepared in step (2) to be used as the top electrode, so that a memristor of a graphene/tungsten disulfide/graphene structure is obtained, wherein the transferring method can refer to a method disclosed by the document Graphene transfer: key for applications of Junmo Kang et al (Nanoscale, 2012, 4, 5527).

(30) (4) The graphene bottom electrode and the top electrode in the device prepared in step (3) are led out by a metal film electrode via a method of electron beam lithography and electron beam evaporation, so as to facilitate subsequent integration and measurement.

Embodiment 6

(31) (1) Preparation of a gold bottom electrode is the same as embodiment 2.

(32) (2) Preparation and transfer of a tungsten disulfide dielectric: firstly growing a tungsten disulfide block material by using a method of chemical vapor transmission (CVT); then stripping a tungsten disulfide film from the growing tungsten disulfide block material to the surface of the SiO.sub.2/Si substrate by using a mechanical stripping method, wherein the thickness of the film is 40 nm; then transferring the tungsten disulfide film on the substrate to the gold bottom electrode prepared in step (1), wherein the transferring method can refer to a method disclosed by the document Graphene transfer: key for applications of Junmo Kang et al (Nanoscale, 2012, 4, 5527).

(33) (3) Preparation of a gold top electrode: the preparation method of the gold top electrode is the same as that in step (1), and after preparation of the gold top electrode is completed, the memristor of a gold/tungsten disulfide/gold structure can be obtained.

Embodiment 7

(34) (1) Preparation of a graphene bottom electrode is the same as embodiment 1.

(35) (2) Preparation and transfer of a tungsten disulfide dielectric: growing a tungsten disulfide film by using a method of chemical vapor deposition (CVD), wherein the thickness of the film is about 40 nm; and then transferring the growing tungsten disulfide film to the graphene bottom electrode prepared in step (1).

(36) (3) Preparation and transfer of a graphene top electrode: the preparation method of the graphene top electrode is the same as that in step (1), and after preparation of the graphene top electrode is completed, the prepared graphene film electrode is transferred to the graphene bottom electrode and the tungsten disulfide dielectric layer prepared in step (2) to be used as the top electrode, so that a memristor of a graphene/tungsten disulfide/graphene structure is obtained, wherein the transferring method can refer to a method disclosed by the document Graphene transfer: key for applications of Junmo Kang et al (Nanoscale, 2012, 4, 5527).

(37) (4) The graphene bottom electrode and the top electrode in the device prepared in step (3) are led out by a metal film electrode via a method of electron beam lithography and electron beam evaporation, so as to facilitate subsequent integration and measurement.

Embodiment 8

(38) (1) The preparation of the gold bottom electrode is the same as embodiment 2.

(39) (2) Preparation and transfer of a tungsten disulfide dielectric: growing a tungsten disulfide film by using a method of chemical vapor deposition (CVD), wherein the thickness of the film is about 40 nm; and then transferring the growing tungsten disulfide film to the gold bottom electrode prepared in step (1), wherein the transferring method can refer to a method disclosed by the document Graphene transfer: key for applications of Junmo Kang et al (Nanoscale, 2012, 4, 5527).

(40) (3) Preparation of a gold top electrode: the preparation method of the gold top electrode is the same as that in step (1), and after preparation of the gold top electrode is completed, the memristor of a gold/tungsten disulfide/gold structure can be obtained.

Embodiment 9

(41) (1) The preparation of a graphene bottom electrode is the same as embodiment 1.

(42) (2) Preparation and transfer of a sulfur doped tungsten disulfide dielectric: growing a sulfur doped tungsten disulfide film by using a method of chemical vapor deposition (CVD), wherein the thickness of the film is about 40 nm; and then transferring the growing sulfur doped tungsten disulfide film to the graphene bottom electrode prepared in step (1).

(43) (3) Preparation and transfer of a graphene top electrode: the preparation method of the graphene top electrode is the same as that in step (1), and after preparation of the graphene top electrode is completed, the prepared graphene film electrode is transferred to the graphene bottom electrode and the sulfur doped tungsten disulfide dielectric layer prepared in step (2) to be used as the top electrode, so that a memristor of a graphene/sulfur doped tungsten disulfide/graphene structure is obtained, wherein the transferring method can refer to a method disclosed by the document Graphene transfer: key for applications of Junmo Kang et al (Nanoscale, 2012, 4, 5527).

(44) (4) The graphene bottom electrode and the top electrode in the device prepared in step (3) are led out by a metal film electrode via a method of electron beam lithography and electron beam evaporation, so as to facilitate subsequent integration and measurement.

Embodiment 10

(45) (1) The preparation of a gold bottom electrode is the same as embodiment 2.

(46) (2) Preparation and transfer of a sulfur doped tungsten disulfide dielectric: growing a sulfur doped tungsten disulfide film by using a method of chemical vapor deposition (CVD), wherein the thickness of the film is about 40 nm; and then transferring the growing sulfur doped tungsten disulfide film to the gold bottom electrode prepared in step (1), wherein the transferring method can refer to a method disclosed by the document Graphene transfer: key for applications of Junmo Kang et al (Nanoscale, 2012, 4, 5527).

(47) (3) Preparation of the gold top electrode: the preparation method of the gold top electrode is the same as that in step (1), and after preparation of the gold top electrode is completed, the memristor of a gold/sulfur doped tungsten disulfide/gold structure can be obtained.

Embodiment 11

(48) (1) The preparation of a gold bottom electrode is the same as embodiment 2.

(49) (2) Preparation of an oxygen doped molybdenum disulfide dielectric: growing an oxygen doped molybdenum disulfide film on the prepared bottom electrode by using a method of molecular beam epitaxy (MBE), wherein the thickness of the film is about 40 nm.

(50) (3) Preparation of the gold top electrode: the preparation method of the gold top electrode is the same as that in step (1), and after preparation of the gold top electrode is completed, the memristor of a gold/oxygen doped molybdenum disulfide/gold structure can be obtained.

Embodiment 12

(51) (1) The preparation of a gold bottom electrode is the same as embodiment 2.

(52) (2) Preparation of a tungsten disulfide dielectric: growing a tungsten disulfide film on the prepared bottom electrode by using a method of molecular beam epitaxy (MBE), wherein the thickness of the film is about 40 nm.

(53) (3) Preparation of a gold top electrode: the preparation method of the gold top electrode is the same as that in step (1), and after preparation of the gold top electrode is completed, the memristor of a gold/tungsten disulfide/gold structure can be obtained.

Embodiment 13

(54) (1) The preparation of the graphene bottom electrode is the same as embodiment 1.

(55) (2) Preparation and transfer of an oxygen doped black phosphorus dielectric: firstly growing a black phosphorus block material by using a method of chemical vapor transmission (CVT); then stripping a black phosphorus film from the growing black phosphorus block material to the surface of an SiO.sub.2/Si substrate by using a mechanical stripping method, wherein the thickness of the film is about 40 nm; putting the black phosphorus film in a pure oxygen environment of atmospheric pressure, taking out after 10 minutes; and finally, transferring the oxygen doped black phosphorus film on the substrate to the graphene bottom electrode prepared in step (1), wherein the transferring method can refer to a method disclosed by the document Graphene transfer: key for applications of Junmo Kang et al (Nanoscale, 2012, 4, 5527).

(56) Steps (3)-(4) are the same as steps (3)-(4) of embodiment 1.

Embodiment 14

(57) (1) The preparation of a gold bottom electrode is the same as embodiment 2.

(58) (2) Preparation and transfer of an oxygen doped black phosphorus dielectric: firstly growing a black phosphorus block material by using a method of chemical vapor transmission (CVT); then stripping a black phosphorus film from the growing black phosphorus block material to the surface of an SiO.sub.2/Si substrate by using a mechanical stripping method, wherein the thickness of the film is about 40 nm; putting the black phosphorus film in a pure oxygen environment of atmospheric pressure, taking out after 10 minutes; and finally, transferring the growing oxygen doped black phosphorus film to the gold bottom electrode prepared in step (1), wherein the transferring method can refer to a method disclosed by the document Graphene transfer: key for applications of Junmo Kang et al (Nanoscale, 2012, 4, 5527).

(59) (3) Preparation of a gold top electrode: the preparation method of the gold top electrode is the same as that in step (1), and after preparation of the gold top electrode is completed, the memristor of a gold/oxygen doped black phosphorus/gold structure can be obtained.

Embodiment 15

(60) (1) The preparation of a graphene bottom electrode is the same as embodiment 1.

(61) (2) Preparation and transfer of a molybdenum disulfide dielectric: firstly growing a molybdenum disulfide block material by using a method of chemical vapor transmission (CVT); then stripping a molybdenum disulfide film from the growing molybdenum disulfide block material to the surface of an SiO.sub.2/Si substrate by using a mechanical stripping method; and then transferring the molybdenum disulfide film on the substrate to the graphene bottom electrode prepared in step (1), wherein the transferring method can refer to a method disclosed by the document Graphene transfer: key for applications of Junmo Kang et al (Nanoscale, 2012, 4, 5527).

(62) (3) Preparation and transfer of a graphene top electrode: the preparation method of the graphene top electrode is the same as that in step (1), and after preparation of the graphene top electrode is completed, the prepared graphene film electrode is transferred to the graphene bottom electrode and the molybdenum disulfide dielectric layer prepared in step (2) to be used as the top electrode, so that a memristor of a graphene/molybdenum disulfide/graphene structure is obtained, wherein the transferring method can refer to a method disclosed by the document Graphene transfer: key for applications of Junmo Kang et al (Nanoscale, 2012, 4, 5527).

(63) (4) The graphene bottom electrode and the top electrode in the device prepared in step (3) are led out by a metal film electrode via a method of electron beam lithography and electron beam evaporation, so as to facilitate subsequent integration and measurement.

Embodiment 16

(64) (1) The preparation of a gold bottom electrode is the same as embodiment 2.

(65) (2) Preparation and transfer of a molybdenum disulfide dielectric: firstly growing a molybdenum disulfide block material by using a method of chemical vapor transmission (CVT); then stripping a molybdenum disulfide film from the growing molybdenum disulfide block material to the surface of an SiO.sub.2/Si substrate by using a mechanical stripping method, wherein the thickness of the film is about 40 nm; and then transferring the molybdenum disulfide film on the substrate to the gold bottom electrode prepared in step (1), wherein the transferring method can refer to a method disclosed by the document Graphene transfer: key for applications of Junmo Kang et al (Nanoscale, 2012, 4, 5527).

(66) (3) Preparation of a gold top electrode: the preparation method of the gold top electrode is the same as that in step (1), and after preparation of the gold top electrode is completed, the memristor of a gold/molybdenum disulfide/gold structure can be obtained.

Embodiment 17

(67) (1) The preparation of a graphene bottom electrode is the same as embodiment 1.

(68) (2) Preparation and transfer of a molybdenum disulfide dielectric: firstly growing a molybdenum disulfide film by using a method of chemical vapor deposition (CVD), wherein the thickness of the film is about 40 nm; and then transferring the growing molybdenum disulfide film to the graphene bottom electrode prepared in step (1).

(69) (3) Preparation and transfer of a graphene top electrode: the preparation method of the graphene top electrode is the same as that in step (1), and after preparation of the graphene top electrode is completed, the prepared graphene film electrode is transferred to the graphene bottom electrode and the molybdenum disulfide dielectric layer prepared in step (2) to be used as the top electrode, so that a memristor of a graphene/molybdenum disulfide/graphene structure is obtained, wherein the transferring method can refer to a method disclosed by the document Graphene transfer: key for applications of Junmo Kang et al (Nanoscale, 2012, 4, 5527).

(70) (4) The graphene bottom electrode and the top electrode in the device prepared in step (3) are led out by a metal film electrode via a method of electron beam lithography and electron beam evaporation, so as to facilitate subsequent integration and measurement.

Embodiment 18

(71) (1) The preparation of a gold bottom electrode is the same as embodiment 2.

(72) (2) Preparation and transfer of a molybdenum disulfide dielectric: firstly growing a molybdenum disulfide film by using a method of chemical vapor deposition (CVD), wherein the thickness of the film is about 40 nm; and then transferring the growing molybdenum disulfide film to the gold bottom electrode prepared in step (1), wherein the transferring method can refer to a method disclosed by the document Graphene transfer: key for applications of Junmo Kang et al (Nanoscale, 2012, 4, 5527).

(73) (3) Preparation of a gold top electrode: the preparation method of the gold top electrode is the same as that in step (1), and after preparation of the gold top electrode is completed, the memristor of a gold/molybdenum disulfide/gold structure can be obtained.

Embodiment 19

(74) (1) Preparation of a platinum bottom electrode: firstly coating the substrate with a layer of PMMA in a spinning way by using a spin coater at the speed of 4000 r/min; exposing a stripe electrode pattern (the required electrode pattern is exposed, the remaining part is covered by photoresist, and the stripe width is 1 micrometer) in a designated position on the substrate by using a method of electron beam lithography, and developing the pattern by using a developing solution; then growing a layer of platinum metal film on the substrate by using a manner of electron beam evaporation, wherein the thickness of the film is about 40 nm; and finally putting the substrate into an acetone solution, and dissolving residual PMMA photoresist with acetone, wherein the platinum gold film on the surface of the redundant photoresist falls off from the substrate accordingly, and what is left on the substrate is a stripe platinum bottom electrode.

(75) (2) Preparation and transfer of an oxygen doped molybdenum disulfide dielectric: firstly growing a molybdenum disulfide block material by using a method of chemical vapor transmission (CVT); then stripping a molybdenum disulfide film from the growing molybdenum disulfide block material to the surface of the SiO.sub.2/Si substrate by using a mechanical stripping method, wherein the thickness of the film is about 40 nm; putting the molybdenum disulfide film to a heating table of 160 C. in the air, taking down after 1.5 hours, and transferring the oxygen doped molybdenum disulfide film on the substrate to the platinum bottom electrode prepared in step (1), wherein the oxygen doping amount of the embodiment is 15%. The transferring method can refer to a method disclosed by the document Graphene transfer: key for applications of Junmo Kang et al (Nanoscale, 2012, 4, 5527).

(76) (3) Preparation of a platinum top electrode: the preparation method of the platinum top electrode is the same as that in step (1).

Embodiment 20

(77) (1) Preparation of a palladium bottom electrode: firstly coating the substrate with a layer of PMMA in a spinning way by using a spin coater at the speed of 4000 r/min; exposing a stripe electrode pattern (the required electrode pattern is exposed, the remaining part is covered by photoresist, and the stripe width is 1 micrometer) in a designated position on the substrate by using a method of electron beam lithography, and developing the pattern by using a developing solution; then growing a layer of palladium metal film on the substrate by using a manner of electron beam evaporation, wherein the thickness of the film is about 40 nm; and finally putting the substrate into an acetone solution, and dissolving residual PMMA photoresist with acetone, wherein the palladium metal film on the surface of the redundant photoresist falls off from the substrate accordingly, and what is left on the substrate is a stripe platinum bottom electrode.

(78) (2) Preparation and transfer of an oxygen doped molybdenum disulfide dielectric: firstly growing a molybdenum disulfide block material by using a method of chemical vapor transmission (CVT); then stripping a molybdenum disulfide film from the growing molybdenum disulfide block material to the surface of the SiO.sub.2/Si substrate by using a mechanical stripping method, wherein the thickness of the film is about 40 nm; putting the molybdenum disulfide film to a heating table of 160 C. in the air, taking down after 1.5 hours, and transferring the oxygen doped molybdenum disulfide film on the substrate to the palladium bottom electrode prepared in step (1), wherein the oxygen doping amount of the embodiment is 15%. The transferring method can refer to a method disclosed by the document Graphene transfer: key for applications of Junmo Kang et al (Nanoscale, 2012, 4, 5527).

(79) (3) Preparation of a palladium top electrode: the preparation method of the palladium top electrode is the same as that in step (1).

Embodiment 21

(80) (1) Preparation of a titanium nitride bottom electrode: firstly coating the substrate with a layer of PMMA in a spinning way by using a spin coater at the speed of 4000 r/min; exposing a stripe electrode pattern (the required electrode pattern is exposed, the remaining part is covered by photoresist, and the stripe width is 1 micrometer) in a designated position on the substrate by using a method of electron beam lithography, and developing the pattern by using a developing solution; then growing a layer of titanium nitride film on the substrate by using a manner of magnetron sputtering, wherein the thickness of the film is about 40 nm; and finally putting the substrate into an acetone solution, and dissolving residual PMMA photoresist with acetone, wherein the titanium nitride film on the surface of the redundant photoresist falls off from the substrate accordingly, and what is left on the substrate is a stripe titanium nitride bottom electrode.

(81) (2) Preparation and transfer of an oxygen doped molybdenum disulfide dielectric: firstly growing a molybdenum disulfide block material by using a method of chemical vapor transmission (CVT); then stripping a molybdenum disulfide film from the growing molybdenum disulfide block material to the surface of the SiO.sub.2/Si substrate by using a mechanical stripping method, wherein the thickness of the film is about 40 nm; putting the molybdenum disulfide film to a heating table of 160 C. in the air, taking down after 1.5 hours, and transferring the oxygen doped molybdenum disulfide film on the substrate to the titanium nitride bottom electrode prepared in step (1), wherein the oxygen doping amount of the embodiment is 15%. The transferring method can refer to a method disclosed by the document Graphene transfer: key for applications of Junmo Kang et al (Nanoscale, 2012, 4, 5527).

(82) (3) Preparation of a titanium nitride top electrode: the preparation method of the titanium nitride top electrode is the same as that in step (1).

Embodiment 22

(83) (1) The preparation of a graphene bottom electrode is the same as embodiment 1.

(84) (2) Preparation and transfer of an oxygen doped molybdenum disulfide dielectric: firstly growing a molybdenum disulfide block material by using a method of chemical vapor transmission (CVT); then stripping a molybdenum disulfide film from the growing molybdenum disulfide block material to the surface of an SiO.sub.2/Si substrate by using a mechanical stripping method, wherein the thickness of the film is about 40 nm; and putting the molybdenum disulfide film to a heating table of 160 C. in the air, taking down after 1.5 hours, and transferring the oxygen doped molybdenum disulfide film on the substrate to the graphene bottom electrode prepared in step (1), wherein the transferring method can refer to a method disclosed by the document Graphene transfer: key for applications of Junmo Kang et al (Nanoscale, 2012, 4, 5527).

(85) Step (3) is the same as step (3) of embodiment 2.

Embodiment 23

(86) (1) The preparation of a gold bottom electrode is the same as embodiment 2.

(87) (2) Preparation and transfer of an oxygen doped molybdenum disulfide dielectric: firstly growing a molybdenum disulfide block material by using a method of chemical vapor transmission (CVT); then stripping a molybdenum disulfide film from the growing molybdenum disulfide block material to the surface of an SiO.sub.2/Si substrate by using a mechanical stripping method, wherein the thickness of the film is about 40 nm; and putting the molybdenum disulfide film to a heating table of 160 C. in the air, taking down after 1.5 hours, and transferring the oxygen doped molybdenum disulfide film on the substrate to the gold bottom electrode prepared in step (1), wherein the transferring method can refer to a method disclosed by the document Graphene transfer: key for applications of Junmo Kang et al (Nanoscale, 2012, 4, 5527).

(88) Steps (3)-(4) are the same as steps (3)-(4) of embodiment 1.

(89) A switching curve schematic diagram of devices in embodiments 3-23 at the temperature of 300 C. is as shown in FIG. 8, indicating that the prepared memristor can work at the temperature of 300 C.; and a state maintaining time schematic diagram of high and low resistance states of devices in embodiments 3-23 at the temperature of 300 C. is as shown in FIG. 9, indicating that the prepared memristor can keep the internal steady resistance state for a long time at the temperature of 300 C.

Embodiment 24

(90) Designing a Group of Parallel Test:

(91) (1) The preparation of a graphene bottom electrode is the same as embodiment 1.

(92) (2) Preparation and transfer of an oxygen doped molybdenum disulfide dielectric: firstly growing a molybdenum disulfide block material by using a method of chemical vapor transmission (CVT); then stripping a molybdenum disulfide film from the growing molybdenum disulfide block material to the surface of an SiO.sub.2/Si substrate by using a mechanical stripping method, wherein the thickness of the film is about 40 nm; putting the molybdenum disulfide film to a heating table of 160 C. in the air (here, in order to compare the influence of different oxygen doping amounts on the device, the oxygen doping proportion can be controlled by controlling the oxidizing time of a sample when being put onto the heating table, and 10 groups of contrast tests are performed, with the oxygen doping amounts being respectively 0.1%, 5%, 10%, 20%, 25%, 30%, 35%, 40% and 50%); and after oxidization is completed, taking down the molybdenum disulfide film, and transferring the oxygen doped molybdenum disulfide film on the substrate to the graphene bottom electrode prepared in step (1), wherein the transferring method can refer to a method disclosed by the document Graphene transfer: key for applications of Junmo Kang et al (Nanoscale, 2012, 4, 5527).

(93) Steps (3)-(4) are the same as steps (3)-(4) of embodiment 1. The influence of different oxygen doping amounts on the device is as shown in table 1.

(94) TABLE-US-00001 TABLE 1 Influence of different oxygen doping amounts to the device Group Number 19-1 19-2 19-3 19-4 19-5 19-6 19-7 19-8 19-9 19-10 Oxygen 0 1% 5% 10% 20% 25% 30% 35% 40% 50% Doping Amount Average 10.sup.2 10.sup.3 10.sup.4 10.sup.6 10.sup.6 10.sup.5 10.sup.4 10.sup.4 10.sup.3 10.sup.2 Switching Times

(95) Conclusion: the influence of the oxygen doping amount to the switching frequency is an important performance index of the memristor, the oxygen doping amount will affect the switching times of the device, and it can be known from table 1 that when no oxygen is doped, the measured average switching times is 10.sup.2; when the oxygen doping amount is 1%, the measured average switching times is 10.sup.3; when the oxygen doping amount is 50%, the measured average switching times is 10.sup.2; when the oxygen doping amount is higher than 50%, the stability of a crystal structure of molybdenum disulfide cannot be maintained, and the device loses high temperature stability; and therefore, when the oxygen doping amount x is more than 0% and less than 50%, the average switching times are all fine, especially, when x is more than or equal to 10% and less than or equal to 20%, the average switching time is highest, and the doping amount is optimal.