IGBT PACKAGE HEATING DISSIPATION STRUCTURE AND MOTOR CONTROLLER APPLYING THE SAME
20230005812 ยท 2023-01-05
Assignee
Inventors
Cpc classification
H01L23/3735
ELECTRICITY
International classification
H01L23/373
ELECTRICITY
H05K1/18
ELECTRICITY
Abstract
Disclosed are an IGBT package heat dissipation structure and a motor controller applying the same. The IGBT package heat dissipation structure includes a heat dissipation substrate body, heat dissipation fins and electrodes respectively fixed on two sides of the heat dissipation substrate body. Each heat dissipation fin is provided with an inner cavity, a wafer, a first DBC layer and a second DBC layer are arranged in the inner cavity, an electrode is extended through the heat dissipation substrate body, and connected with the wafer through the first DBC layer and the second DBC layer.
Claims
1. An insulated gate bipolar transistor (IGBT) package heat dissipation structure, comprising a heat dissipation substrate body, heat dissipation fins and electrodes respectively fixed on two sides of the heat dissipation substrate body; wherein each heat dissipation fin is provided with an inner cavity, a wafer, a first direct bonding copper (DBC) layer and a second DBC layer are arranged in the inner cavity; an electrode is extended through the heat dissipation substrate body, and connected with the wafer through the first DBC layer and the second DBC layer.
2. The IGBT package heat dissipation structure according to claim 1, wherein a left side surface of the wafer is connected with a copper layer on a right surface of the first DBC layer by a second welding layer, and a right side surface of the wafer is connected with a copper layer on a left surface of the second DBC layer by a third welding layer.
3. The IGBT package heat dissipation structure according to claim 2, wherein the electrode is connected to the copper layer on the right surface of the first DBC layer and the copper layer on the left surface of the second DBC layer to connect with the wafer to supply current to the wafer.
4. The IGBT package heat dissipation structure according to claim 3, wherein a copper layer on a left surface of the first DBC layer is connected with a left surface of the inner cavity of the heat dissipation fin by a first welding layer, and a copper layer on a right surface of the second DBC layer is connected with a right surface of the inner cavity of the heat dissipation fin by a fourth welding layer.
5. The IGBT package heat dissipation structure according to claim 3, wherein the heat dissipation substrate body is provided with an insulating housing at a position corresponding to the heat dissipation fin, and the electrode is extended into the inner cavity of the heat dissipation fin through the insulating housing.
6. The IGBT package heat dissipation structure according to claim 5, wherein the inner cavity of the heat dissipation fin is filled with a heat dissipation material.
7. The IGBT package heat dissipation structure according to claim 1, wherein the inner cavity of the heat dissipation fin is an upside down H shape, a U shape, or a trapezoidal shape with a bottom closed.
8. The IGBT package heat dissipation structure according to claim 1, wherein a bottom of the inner cavity of the heat dissipation fin is not closed.
9. A motor controller, comprising a main housing and a film capacitor, a printed circuit board (PCB), a three-phase output module, an IGBT module, and a bus module passing through the main housing, wherein the IGBT module comprises the IGBT package heat dissipation structure according to claim 1, and the heat dissipation substrate body is shared by a plurality of IGBT package heat dissipation structures.
10. The motor controller according to claim 9, wherein a water channel for heat dissipation is provided in the main housing, and the heat dissipation fins of the IGBT module are disposed in the water channel.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0024] The present application is further described below with reference to the accompanying drawings and embodiments.
[0025]
[0026]
[0027]
[0028]
[0029]
[0030]
[0031]
[0032]
DETAILED DESCRIPTION OF THE EMBODIMENTS
First Embodiment
[0033] As shown in
[0034] As shown in
Second Embodiment
[0035] As shown in
[0036] The heat dissipation substrate body 611 is provided with an insulating housing 66 at a position corresponding to the inner cavity 6121 of each heat dissipation fin 612, and the insulating housing 66 serves as a support member for supporting an electrode 65, and meanwhile, the insulating housing 66 insulates the electrode 65 from the heat dissipation substrate body 611. The electrode 65 is extended through the insulating housing 66 and enters the inner cavity of the heat dissipation fin 612. A lower end of the electrode 65 is connected with the copper layer on the right surface of the first DBC layer 631 and the copper layer on the left surface of the second DBC layer 632 to realize the input of current to the wafer 64 and output of the current from the wafer 64. The inner cavity 6121 of the heat dissipation fin 612 is also filled with heat conduction silica gel or other heat dissipation materials, so that the heat dissipation effect of the IGBT module 6 is enhanced.
[0037] The heat dissipation fin 612 of the present embodiment is not limited to that shown in
[0038] The above embodiments are only for illustrating the technical concept and features of the present application, and the purpose thereof is to enable a person skilled in the art to understand the contents of the present application and to implement the present application, and not to limit the scope of the present application. All modifications made according to the spirit of the main technical solution of the present application shall fall within the claimed scope of the present application.