Ultra-low voltage two-stage ring voltage-controlled oscillator applied to chip circuit

Abstract

The present utility model relates to an ultra-low voltage two-stage ring voltage-controlled oscillator applied to a chip circuit. The oscillator includes two-stage delay units. The oscillator includes two delay units that are connected end-to-end, and adjusts a working frequency by adjusting delay time of the delay unit. The delay unit includes PMOS transistors M1, M2, M3, and M4, NMOS transistors M5, M6, M7, and M8, and a load capacitor C.sub.L. The two-stage ring voltage-controlled oscillator of the present utility model uses a substrate feed forward bias structure, reduces a threshold voltage of a transistor, reduces a supply voltage, reduces power consumption, has a large tuning range, and is particularly suitable for a system that works at a low supply voltage.

Claims

1. A two-stage ring voltage-controlled oscillator applied to a chip circuit, comprising two delay units that are connected end-to-end, wherein: a delay time of the delay unit is adjustable; and the delay unit comprises PMOS transistors M1, M2, M3, and M4, NMOS transistors M5, M6, M7, and M8, and a load capacitor C.sub.L, substrates of the PMOS transistors M2 and M4 are grounded, substrates of the PMOS transistors M1 and M3 are connected to a control voltage Vc, gate electrodes of the PMOS transistors M1 and M3 are grounded, source electrodes of the PMOS transistors M1 and M3 are connected to a VDD, and drain electrodes of the PMOS transistors M1 and M3 are connected to gate electrodes and drain electrodes of the PMOS transistors M2 and M4; the NMOS transistor M5 and the NMOS transistor M6 are used as non-inverting and inverting differential input ends of the delay unit respectively, source electrodes and drain electrodes of the NMOS transistor M7 and the NMOS transistor M8 are connected to source electrodes and drain electrodes of the NMOS transistor M5 and the NMOS transistor M6 respectively, a gate electrode of the NMOS transistor M7 is connected to the drain electrode of the NMOS transistor M6, and a gate electrode of the NMOS transistor M8 is connected to the drain electrode of the NMOS transistor M5; the drain electrode of the NMOS transistor M5 is used as an inverting output end, the drain electrode of the NMOS transistor M6 is used as a non-inverting output end, and the output ends are connected to the load capacitor C.sub.L; and substrate ends of the NMOS transistors are connected to a bias voltage V.sub.B.

Description

BRIEF DESCRIPTION OF DRAWINGS

(1) The following further describes the present utility model with reference to accompanying drawings and embodiments. In the drawings,

(2) FIG. 1 is a schematic diagram in which a threshold voltage of a MOS transistor changes with a substrate bias voltage;

(3) FIG. 2 is a structural diagram of an ultra-low voltage two-stage ring voltage-controlled oscillator VCO;

(4) FIG. 3 is a structural diagram of a delay unit of an ultra-low voltage two-stage ring voltage-controlled oscillator; and

(5) FIG. 4 is a schematic diagram in which a frequency of a voltage-controlled oscillator changes with a control voltage.

DESCRIPTION OF EMBODIMENTS

(6) Referring to FIG. 1, FIG. 1 is a schematic diagram in which a threshold voltage of a MOS transistor changes with a substrate bias voltage. A substrate forward bias technology may effectively reduce the threshold voltage of the MOS transistor.

(7) Using a 0.18 m RF CMOS technology as an example, threshold voltages of NMOS and PMOS transistors are approximately +/0.5 V. When a supply voltage is 0.5 V, the threshold voltage limits performance of a circuit greatly. The threshold voltage can be reduced by applying a substrate forward bias to a MOS transistor. In the 0.18 m RF CMOS technology, a sensitive analog circuit is isolated from a substrate noise by using a deep N-well. Therefore, regardless of an NMOS transistor or a PMOS transistor connected to a substrate, the threshold voltage may be reduced by using the substrate forward bias.

(8) The threshold voltage (V.sub.thp) of the PMOS transistor with the substrate forward bias may be expressed as:
|V.sub.thp|=|V.sub.thp0|+({square root over (2|.sub.f|V.sub.sb)}{square root over (2|.sub.f|)})(1)

(9) |V.sub.thp0| is |V.sub.thp| when a source substrate voltage (V.sub.sb) is 0, is a body effect coefficient, and |.sub.f| is a fermi potential. Therefore, the threshold voltage |V.sub.th| decreases as V.sub.sb increases, and the threshold voltage of the PMOS transistor changes with the substrate bias voltage, as shown in FIG. 1. As can be known from FIG. 1, when the substrate bias voltage of the PMOS transistor changes from 500 mV to 0 V, the threshold voltage of the PMOS transistor changes from 500 mV to 366 mV. When the substrate bias voltage V.sub.c of the NMOS transistor changes from 0 V to 0.5 V, the threshold voltage (V.sub.thn) of the NMOS transistor changes from 531 mV to 423 mV. This is very effective when the MOS transistor works at an ultra-low supply voltage.

(10) Referring to FIG. 2, FIG. 2 is a structural diagram of an ultra-low voltage two-stage ring voltage-controlled oscillator VCO that includes two same delay units that are connected end-to-end.

(11) Referring to FIG. 3, FIG. 3 is a structural diagram of a delay unit of an ultra-low voltage two-stage ring voltage-controlled oscillator. The delay unit includes PMOS transistors M1, M2, M3, and M4, NMOS transistors M5, M6, M7, and M8, and a load capacitor C.sub.L. The designed ring oscillator provided by the present invention is designed based on a 0.18 m RF technology in specific implementation. Substrates of the PMOS transistors M2 and M4 are grounded, substrates of the PMOS transistors M1 and M3 are connected to a control voltage Vc, gate electrodes of the PMOS transistors M1 and M3 are grounded, source electrodes of the PMOS transistors M1 and M3 are connected to a VDD, and drain electrodes of the PMOS transistors M1 and M3 are connected to gate electrodes and drain electrodes of the PMOS transistors M2 and M4; the NMOS transistor M5 and the NMOS transistor M6 are used as non-inverting and inverting differential input ends of the delay unit respectively, source electrodes and drain electrodes of the NMOS transistor M7 and the NMOS transistor M8 are connected to source electrodes and drain electrodes of the NMOS transistor M5 and the NMOS transistor M6 respectively, a gate electrode of the NMOS transistor M7 is connected to the drain electrode of the NMOS transistor M6, and a gate electrode of the NMOS transistor M8 is connected to the drain electrode of the NMOS transistor M5; the drain electrode of the NMOS transistor M5 is used as an inverting output end, the drain electrode of the NMOS transistor M6 is used as a non-inverting output end, and the output ends are connected to the load capacitor C.sub.L; and substrate ends of the NMOS transistors are connected to a bias voltage V.sub.B.

(12) Referring to FIG. 4, FIG. 4 is a schematic diagram in which a frequency of a voltage-controlled oscillator changes with a control voltage. FIG. 4 provides a frequency change range of the voltage-controlled oscillator when the control voltage changes. As can be seen from FIG. 4, when the control voltage Vc changes from 0 V to 0.5 V, a working frequency tuning range of the VCO is from 392 MHz to 88 MHz, and a gain of the VCO is 608 MHz/V.

(13) With the design of the foregoing embodiment of the present utility model, a substrate forward bias structure can be used, a threshold voltage of a transistor can be reduced, a supply voltage can be reduced, and power consumption can be reduced. With the two-stage structure, the oscillator has a simple circuit structure, has a small area, and can be easily implemented and integrated.

(14) The present utility model is described according to the specific embodiment. However, a person skilled in the art should understand that various modifications and equivalent substitutions may be made to the present utility model without departing from the scope of the present utility model. In addition, to adapt to a specific scenario of the present utility model technology, modifications may be made to the present utility model without departing from the protection scope of the present utility model. Therefore, the present utility model is not limited to the specific embodiment disclosed herein, but includes all embodiments falling within the protection scope defined by the claims.