Sn doped ZnS nanowires for white light source material

Abstract

According to exemplary embodiments, a method of synthesizing tin (Sn)-doped Zinc Sulfide (ZnS) nanostructures for electroluminescent white light source includes coating a substrate, including a silicon oxide layer, with Sn by vacuuming depositing Sn as catalyst nanostructures on the substrate, placing the substrate coated with Sn in a furnace, introducing a carrier flow gas into the furnace, adding a ZnS power to the furnace, growing ZnS nanostructures, and dissolving Sn in the growing ZnS nanostructures. The S vacancies are on a surface of the ZnS nanostructures. The ZnS nanostructures are grown on the substrate having a temperature in a range of 750 C. to 850 C.

Claims

1. A method of synthesizing tin (Sn)-doped Zinc Sulfide (ZnS) nanostructures for electroluminescent white light source, comprising: coating a substrate, comprising a silicon oxide layer, with Sn by vacuuming depositing Sn as catalyst nanostructures on the substrate; placing the substrate coated with Sn in a furnace; introducing a carrier flow gas into the furnace; adding a ZnS powder to the furnace; growing ZnS nanostructures; and dissolving Sn in the growing ZnS nanostructures; wherein S vacancies are on a surface of the ZnS nanostructures, wherein the ZnS nanostructures are grown on the substrate having a temperature in a range of 750 C. to 850 C., wherein the Sn self-doped ZnS nanostructures have broad emission in a range of 400 nm to 650 nm, wherein the deposited Sn is 2 nm or less, and wherein the ZnS nanostructures doped with Sn are grown on the substrate having a temperature of 780 C.

2. The method of claim 1, wherein blue, red, and green emissions of the ZnS nanostructures are controlled by growth conditions of Sn doped ZnS nanostructures.

3. The method of claim 1, wherein the carrier flow gas is a mixture of hydrogen and nitrogen gas is in a ratio of 1:4 that is introduced at flow rate of 30 Sccm.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) The accompanying drawings, which are included to provide a further understanding of the inventive concept, and are incorporated in and constitute a part of this specification, illustrate exemplary embodiments of the inventive concept, and, together with the description, serve to explain principles of the inventive concept.

(2) FIGS. 1A and 1B are a device designs for ZnS:Sn based electroluminescent devices for (a) current based, and (b) tunnel based sandwich devices.

(3) FIGS. 2A, 2B, and 2C are the X-ray photoelectron spectroscopy (XPS) data of the ZnS:Sn catalyzed and doped nanostructures showing Zn-2p, Sn-3d, and S-2p peaks.

(4) FIGS. 3A, 3B, 3C, and 3D are room temperature PL spectra from the ZnS nanostructures doped with Sn grown at different temperatures.

(5) The Figures also show fluorescent images of same samples showing the difference in emission patterns.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

(6) In the following description, for the purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of various exemplary embodiments. It is apparent, however, that various exemplary embodiments may be practiced without these specific details or with one or more equivalent arrangements. In other instances, well-known structures and devices are shown in block diagram form in order to avoid unnecessarily obscuring various exemplary embodiments.

(7) In the accompanying figures, the size and relative sizes of elements may be exaggerated for clarity and descriptive purposes. Also, like reference numerals denote like elements.

(8) For the purposes of this disclosure, at least one of X, Y, and Z and at least one selected from the group consisting of X, Y, and Z may be construed as X only, Y only, Z only, or any combination of two or more of X, Y, and Z, such as, for instance, XYZ, XYY, YZ, and ZZ. As used herein, the term and/or includes any and all combinations of one or more of the associated listed items.

(9) Although the terms first, second, etc. may be used herein to describe various elements, components, and/or regions, these elements, components, and/or regions should not be limited by these terms. These terms are used to distinguish one element, component, and/or region from another element, component, and/or region. Thus, a first element, component, and/or region discussed below could be termed a second element, component, and/or region without departing from the teachings of the present disclosure.

(10) The terminology used herein is for the purpose of describing particular embodiments and is not intended to be limiting. As used herein, the singular forms, a, an, and the are intended to include the plural forms as well, unless the context clearly indicates otherwise. Moreover, the terms comprises, comprising, includes, and/or including, when used in this specification, specify the presence of stated features, integers, steps, operations, elements, components, and/or groups thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.

(11) Design:

(12) An electroluminescent (EL) device consisting of ZnS nanowires/nanostructures doped with suitable concentration of Sn as phosphor material in the device that works on the principle of excitation through current flow (FIG. 1A) in the device or applied electric field in a sandwich structure (FIG. 1B). There are three strong luminescent centers in the Sn doped ZnS nanostructures, namely, S vacancies responsible for the blue band, Zn vacancies for the green band and Sn.sup.2+/4+ states for the red band emission. Electrons are accelerated through the nanowires of ZnS and excite carriers from the valence band to the defect states through the conduction band. The excited carriers relax to the defect states (S, Zn vacancies and Sn.sup.2+/4+ ionized dopants), producing luminescence.

(13) Synthesis:

(14) ZnS nanowires may be synthesized on Si (100) substrates with a thin (2-3 nm) native oxide layer and a Sn catalyst. Ultra-thin film (2 nm thick) of Sn may be deposited on Si substrates by thermal evaporation at room temperature at a base pressure of 310.sup.6 Torn Prior to deposition, substrates may be ultrasonically cleaned. The Sn coated substrates may then be placed in a single zone horizontal tube furnace along with precursor (ZnS) powder in an alumina boat. The precursor material may be placed at the center of the tube and multiple substrates may be placed in downstream and away from the precursor. The furnace may be heated to 1000 C. in a continuous flow of a mixture of hydrogen (H.sub.2) (5%) and nitrogen (N.sub.2) (95%) gases at 20 standard cubic centimeter per minute (Sccm). Measured substrate temperatures may be 850 C., 800 C., 780 C., and 750 C. Growth may be performed for 2 hours. Finally synthesized ZnS nanostructures may be furnace cooled under a flowing N.sub.2 atmosphere.

(15) Optical Characterization:

(16) FIGS. 3A, 3B, 3C, and 3D show the room temperature photoluminescence spectra and corresponding fluorescence microscopy images of ZnS nanowires synthesized using Sn as a catalyst at various growth temperatures. The fluorescence images may be obtained by exciting with a UV lamp. The photoluminescence spectra may be obtained at room temperature by exciting with 325 nm HeCd laser and normalized to the spectrometer and detector response.

(17) The growth temperature showed profound effect on the photoluminescence properties of ZnS nanowires. This was due to a play between the intrinsic defects and doping of catalyst during growth, which was different at different growth temperatures. The results shown in FIGS. 3A, 3B, 3C and 3D demonstrate that the photoluminescence spectra changed its lineshape in nanowires grown at different temperatures. At high temperature growth, Sn defects were substantially dominant, but as the growth temperature was reduced, the balance between intrinsic and extrinsic defects changed and in ZnS nanowires grown at 780 C., a broadband spectrum was observed between 400 nm to 700 nm. In ZnS nanowires grown at lower temperatures, the balance was again disturbed and green and red luminescence was dominant. It was observed that blue emission due to S vacancies may be sensitive to various factors, including, surface to volume ratio and incorporation of Sn as a dopant.

(18) The presence of three fundamental colors show the Sn doped ZnS nanowires as a promising material for white light source. This also introduces the possibility to tune various colors from a single source. The role of Sn doping in the optical properties of ZnS nanowires was shown when Sn doping in ZnS nanostructures produces more relaxed S vacancy ZnS structures at the surface, responsible for blue light emission. This was observed that only in a very small window of growth conditions, S vacancies dominate and hence become dominant for blue emission. This makes Sn doped ZnS nanostructures ideal to fabricate multi-color lasers or LEDs.

(19) FIGS. 2A, 2B, and 2C show the XPS data collected during the visit from one sample of ZnS doped with Sn at 780 C. It shows significant amount of Sn present, which was also apparent from the photoluminescence spectra.

(20) Photoluminescence Spectroscopy

(21) Room temperature photoluminescence spectroscopy was performed to observe the emission spectrum of ZnS:Sn nanostructures grown at different temperatures shown in FIGS. 3A, 3B, 3C, and 3D.

(22) As shown in FIG. 3A, ZnS:Sn grown at 850 C. had mainly red emission in a relatively sharp band centered at 650 nm, which may be attributed to the presence of overwhelming number of Sn.sup.2+/4+ states. Absence of emission bands at 440 nm and 520 nm may show nonexistence of S and Zn vacancies, respectively. This may be clearly observed in the fluorescent image shown with the spectra.

(23) As shown in FIG. 3B, the photoluminescence spectra obtained from ZnS:Sn grown at 800 C. had a much broader band from 500 nm to 670 nm, and may consist of two contributions, i.e., emission from Zn vacancy states and Sn.sup.2+/4+ states. The fluorescent image also showed green light contribution.

(24) As shown in FIG. 3C, the photoluminescence spectra from ZnS:Sn synthesized at 780 C. had the broadest band starting from 400 nm to 700 nm with three distinct broader peaks. The peaks may be observed at approximately 440 nm, 540 nm, and 630 nm. The fluorescent image also showed much brighter spots.

(25) As shown in FIG. 3D, the photoluminescence spectra from ZnS:Sn grown at 730 C. may also show a broad band, but the contribution from 440 nm states may be negligible or very minute. It may have contributions from the green and red emission states. This may be reflected in the fluorescent image.

(26) The photoluminescence measurements may confirm the following:

(27) The presence and number of vacancy states strongly depend on the growth temperature, S vacancies were most sensitive to the growth temperature, and S vacancies were present on the surface of nanostructures.

(28) In order to have substantial blue emission (due to S vacancies), the window of growth of ZnS:Sn nanostructures may be very small. The best results may come from ZnS:Sn nanowires grown at 780 C.

(29) Although certain exemplary embodiments and implementations have been described herein, other embodiments and modifications will be apparent from this description. Accordingly, the inventive concept is not limited to such embodiments, but rather to the broader scope of the presented claims and various obvious modifications and equivalent arrangements.