High contrast far-field radiative thermal diode

Abstract

A far-field radiative thermal rectification device uses a phase change material to achieve a high degree of asymmetry in radiative heat transfer. The device has a multilayer structure on one side and a blackbody on other side. The multilayer structure can consist of a transparent thin film of KBr sandwiched between a thin film of VO.sub.2 and a reflecting layer of gold. When VO.sub.2 is in its insulating phase, the structure is highly reflective due to the two transparent layers on highly reflective gold. When VO.sub.2 is in the metallic phase, Fabry-Perot type of resonance occurs and the tri-layer structure acts like a wide-angle antireflection coating achieved by destructive interference of partially reflected waves making it highly absorptive for majority of spectral range of thermal radiation. The instant structure can form the active part of a configuration that acts like a far-field radiative thermal diode.

Claims

1. A high-contrast thermal diode, comprising a passive component; and an active component comprising, a substrate, a first layer disposed above the substrate having a thickness of 1 m; a second opaque layer having a thickness in the range of approximately 25 nm to 2 m; a third layer comprising a phase change material having a thickness in the range of approximately 25 nm to 2 m.

2. The thermal diode of claim 1, wherein the phase change material of the third layer is one of VO.sub.2, La.sub.0.7Ca.sub.0.15Sr.sub.0.15MnO.sub.3 (LCSMO), and AIST.

3. The thermal diode of claim 2, where in the phase change material of the third layer is VO.sub.2.

4. The thermal diode of claim 1, wherein the second opaque layer is one of KBr, BaF.sub.2, GdF.sub.3, BiF.sub.3, ZnSe, ZnS, Si, GaAs, and Ge.

5. The thermal diode of claim 4, wherein the second opaque layer is KBr.

6. The thermal diode of claim 1, wherein the first layer is one of Au, Ag, Al, Pt-Rd, and Cu.

7. The thermal diode of claim 6, wherein the first layer is Au.

8. The thermal diode of claim 1, wherein the second opaque layer has a thickness of 880 nm.

9. The thermal diode of claim 8, wherein the third layer has a thickness of 25 nm.

10. The thermal diode of claim 1, wherein the third layer is configured to be in a metallic phase where the active component has a high emissivity.

11. The thermal diode of claim 10, wherein when the third layer configured to be in an insulating phase where the active component has a low emissivity in the broad spectrum.

12. The thermal diode of claim 1, wherein the diode has a rectification ratio of approximately 11.3.

13. A far-field radiative thermal rectification device comprising, a passive component; and a multilayer structure disposed a distance from the passive component, the multilayer structure comprising, a transparent thin film of KBr; a thin film of VO.sub.2, and a layer of gold, wherein the thin film of VO.sub.2 is disposed between the thin film of KBr and the layer of gold.

14. The device of claim 13, wherein the VO.sub.2 thin film is configured to have at least an insulating phase and a metallic phase.

15. The device of claim 14, wherein when the VO.sub.2 thin film is in the insulating phase, the multilayer structure is highly reflective.

16. The device of claim 14, wherein when VO.sub.2 is in the metallic phase, a Fabry-Perot type of resonance occurs and the multilayer structure acts like a wide-angle antireflection coating having a high absorptive for a majority of spectral range of thermal radiation.

17. The device of claim 13, wherein the device is configured as a far-field radiative thermal diode.

18. The device of claim 13, wherein the device is configured to have a thermal rectification greater than 11 at a temperature bias of about 20 K.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) While the specification concludes with claims particularly pointing out and distinctly claiming particular embodiments of the instant invention, various embodiments of the invention can be more readily understood and appreciated from the following descriptions of various embodiments of the invention when read in conjunction with the accompanying drawings in which:

(2) FIG. 1 is a schematic view of a far-field thermal diode;

(3) FIG. 2 is a graph illustrating spectral heat flux across the optimized thermal diode in forward and reverse bias scenarios;

(4) FIG. 3 illustrates heat flux plotted against temperature difference for thermal diode with bulk VO.sub.2 and present structure;

(5) FIG. 3A illustrates an electromagnetic wave as it travels through the media;

(6) FIG. 4 illustrates angle dependent reflectivity of the active component of thermal diode plotted against wavelength and angle of incidence under forward and reverse bias;

(7) FIG. 5 Illustrates effective reflection coefficient at the air-VO.sub.2 interface ({tilde over (R)}.sub.1,2) and VO.sub.2KBr interface ({tilde over (R)}.sub.2,3); and

(8) FIG. 6 is a schematic view of an alternative exemplary embodiment.

DETAILED DESCRIPTION OF THE INVENTION

(9) Certain exemplary embodiments will now be described to provide an overall understanding of the principles of the structure, function, manufacture, and use of the device and methods disclosed herein. One or more examples of these embodiments are illustrated in the accompanying drawings. Those skilled in the art will understand that the devices and methods specifically described herein and illustrated in the accompanying drawings are non-limiting exemplary embodiments and that the scope of the present invention is defined solely by the claims. The features illustrated or described in connection with one exemplary embodiment may be combined with the features of other embodiments. Such modifications and variations are intended to be included within the scope of the present disclosure. Further, in the present disclosure, like-numbered components of the embodiments generally have similar features, and thus within a particular embodiment each feature of each like-numbered component is not necessarily fully elaborated upon. Additionally, to the extent that directional terms like top, bottom, up, or down are used, they are not intended to limit the systems, devices, and methods disclosed herein. A person skilled in the art will recognize that these terms are merely relative to the system and device being discussed and are not universal.

(10) The instant invention uses an exemplary far-field radiative thermal rectification device 10 that uses a phase change material to achieve a high degree of asymmetry in radiative heat transfer to create a thermal diode. A thermal diode is analogous to an electronic diode which is phonons-conduction based or radiation based. The instant device has a multilayer structure 20 on one side and a blackbody 30 on other side. The multilayer structure 20 consists of transparent film of KBr 24 sandwiched between a film of VO.sub.2 22 and a reflecting layer of gold 26. While the thin film of VO.sub.2 22 is in its insulating phase, the structure 20 can be highly reflective due to the two transparent layers 22, 24 on highly reflective gold 26. When the thin film of VO.sub.2 22 is in the metallic phase, a Fabry-Perot type of resonance occurs and the tri-layer structure 20 acts like a wide-angle antireflection coating achieved by destructive interference of partially reflected waves making it highly absorptive for majority of spectral range of thermal radiation. The instant device 10 can form the active part of configuration that acts like a far-field radiative thermal diode. Thermal rectification greater than 11 is obtained for a temperature bias of 20 K, which is the highest rectification ever predicted for far-field radiative diode configurations. Applications of the instant device can include thermal transistors, amplifiers, thermal memory devices, logic gates, switches, thermostats, thermal management, and dynamic radiative cooling systems.

(11) In a first exemplary embodiment, a thermal diode having a first passive structure 30 and a second multilayer structure 20 is illustrated in FIG. 1. As illustrated, the active component 20 of the thermal diode 10 includes a tri-layer structure consisting of VO.sub.2 22, potassium bromide (KBr) 24 and gold thin films 26 on a substrate 28. The thicknesses of VO.sub.2 and KBr layers can be tuned to maximize rectification. The thickness of gold layer is fixed at 1 m to block radiation from the substrate. For a given temperature bias, maximum (far-field) radiative heat transfer would be possible when both sides 20, 30 are blackbodies, while minimum heat transfer would take place when at least one side 20 is a highly reflective mirror. The instant thermal diode is able to transition from maximum to minimum heat transfer. For example, the active component 20 can exhibit a transition from blackbody to reflective surface upon the reversal of a temperature bias which induces the phase change. As such, the passive component 30 is chosen to be a blackbody, such as for example asbestos, a variety of polymers, and ceramics, such as SiC. Any material other than a blackbody would not yield maximum rectification. The passive structure 1 30 and active structure 2 20 are at temperature T.sub.1=T.sub.C+T and T.sub.2=T.sub.CT, respectively. The mean temperature, i.e. the temperature around which the device operates, is chosen to be the phase transition temperature of VO.sub.2(T.sub.C=341 K). When T.sub.1>T.sub.2 (referred to as forward bias), the VO.sub.2 layer 22 is in its metallic phase; and when T.sub.1<T.sub.2 (referred to as reverse bias), the VO.sub.2 layer 22 becomes insulating with its optical axis aligned along the vertical direction, i.e., z-axis.

(12) In an alternative embodiment, as shown in FIG. 6, some alternative materials for the Gold (Au) layer 126 and the Potassium Bromide (KBr) 124 layer are shown. For example, the alternative KBr layer 124 can be any of the following: BaF.sub.2, GdF.sub.3, BiF.sub.3, ZnSe, ZnS, Si, GaAs, or Ge. Moreover, the gold thin film layer 126 can be any of the following: Ag, Al, PtRd, or Cu. Further, AIST (an alloy of silver, indium, antimony, and tellurium) is an alternative material to the VO.sub.2 material layer 122. While the phase change of AIST occurs through a different mechanism, by using an electric field, it behaves similarly to VO.sub.2 in the instant thermal diode. In a further alternative embodiment, La.sub.0.7Ca.sub.0.15Sr.sub.0.15MnO.sub.3 (LCSMO) (T_C=301 K) can be used in place of the VO.sub.2 layer 122.

(13) In use, the phase transition of the VO.sub.2 layer 22 is not abrupt and a complete insulator-metal transition does not occur until 350 K. The rectification ratio depends on temperature bias as the temperature dependence of radiative heat transfer is essentially nonlinear. The rectification values are calculated at a minimal temperature bias of 20 K i.e., T=10 K. Although transition of VO.sub.2 exhibits a thermal hysteresis of about 8 K, the phase transition is reversible.

(14) As discussed herein, the multilayer structure 20 can be designed to attain high absorbance or reflectance based on its dimensions and material properties. Multilayer structures with constituent thicknesses much smaller than the incident wavelength of light have been studied before. However, the instant device with a VO.sub.2 based multilayer structure 20, can show a dramatic change in the optical property of VO.sub.2 upon phase-change facilitates an extensive variation in the surface reflectivity.

(15) The device 10 as shown in FIG. 1 has variable dimensions of VO.sub.2 (L.sub.1) layer 22 and the KBr (L.sub.2) layer 24. Default values of population size (50), fitness scaling (rank), crossover fraction (0.8), stopping criteria (100 generations) were selected in the optimization process. No tuning of optimization parameters was required as number of variables was only two. The lower and upper bounds on both L.sub.1 and L.sub.2 were in the range of approximately 25 nm and 2 m, respectively. In one exemplary embodiment, the dimensions can be L.sub.1=25 nm and L.sub.2=880 nm.

(16) FIG. 2 shows spectral heat flux (dq/d) of the instant thermal diode in forward and reverse direction with temperature bias 20 K (T=10 K) having dimensions of L.sub.1=25 nm and L.sub.2=880 mn. The forward heat flux can be significantly higher than reverse flux as is shown in FIG. 2. A comparison is shown for heat flux across blackbodies at temperatures 331 K and 351 K, respectively. The inset in FIG. 2 displays angle-averaged emissivity of the active component in both scenarios. When the VO.sub.2 layer 22 is metallic, the structure on the active component 20 has high emissivity near the thermal wavelength (.sub.th=1.27c/k.sub.BT=8.5 m for 341 K). As a significant portion of blackbody radiation falls within this range, this gives rise to a high heat flux in forward bias.

(17) However, when the VO.sub.2 layer 22 is insulating, the structure has very low emissivity in the broad spectrum. The tri-layer structure 20 behaves like a highly reflecting mirror resulting in very low heat flux. Consequently, high contrast in heat flow is achieved leading to a high rectification ratio of 11.3 (=0.918). In order to highlight the diode-like characteristics, heat flux across the device 10 has been plotted against temperature difference in FIG. 3. For comparison, simple case of bulk VO.sub.2 is also shown. The bulk VO.sub.2 has a rectification coefficient of =0.49. Note that, effect of thermal hystersis is not considered here for simplicity. Angle dependent spectral reflectivity of the active component of the thermal diode is plotted in FIG. 4 for the forward and reverse bias cases. As shown, when VO.sub.2 layer is metallic, the tri-layer structure acts like a wide-angle anti-reflection coating for wavelengths between 4 m to 10 m. The dark spot in FIG. 4 corresponds to the Fabry-Perot type of resonance that occurs around =4n.sub.KBr()L.sub.2=5.3 m. High absorption/emission in this wavelength region favors radiative heat transfer as thermal wavelength falls within this range. In reverse bias, the structure is highly reflective in a broad range of wavelengths giving rise to a very low absorption. Note that for thermal wavelength of 8.5 m, Fabry-Perot resonance occurs (for metallic VO.sub.2) when thickness of KBr layer is L.sub.2=.sub.th/4n.sub.KBr(.sub.th)=1.4 m. This configuration however, would not necessarily achieve maximum rectification as the structure may not be purely reflecting when the VO.sub.2 layer 22 is in its insulating phase.

(18) Contrasting reflective properties of the structure are due to constructive and destructive interferences of electromagnetic waves generated by partial reflections at the interfaces. FIG. 3A shows an electromagnetic wave as it travels through the media. The wave is partially reflected at each interface leading to multiple reflections from each layer. This causes interference of electromagnetic waves due to each partial reflection. Effective reflection coefficient of the structure is the phasor sum of these reflection coefficients due to (an infinite number of) individual reflections. When the VO.sub.2 layer 22 is metallic, phasor sum of partial reflections results in destructive interference in the wavelength range of 4 m to 10 m. As a result, the structure is highly absorptive in the range. When the VO.sub.2 layer 22 is insulating, individual reflections add up to a large value making the structure highly reflective for a broad range of the spectrum.

(19) FIG. 5 shows phasor diagram of partial reflections at the air-VO.sub.2 interface and the VO.sub.2KBr interface for TE polarized incident ray of wavelength .sub.th=8.5 m and angle of incidence 10. {tilde over (R)}.sub.1,2 is the effective reflection coefficient at the air-VO.sub.2 interface and {tilde over (R)}.sub.2,3 is the effective reflection coefficient at VO.sub.2KBr interface due to multiple reflections within the KBr layer. They can be expressed as geometric series whose terms are relative amplitudes of partial waves due to first, second and third reflection and so on. For both metallic, as well as insulating VO.sub.2 phases, the magnitude of {tilde over (R)}.sub.2,3, |{tilde over (R)}.sub.2,3|, is large. However, when the VO.sub.2 layer 22 is in metallic phase, each partial reflection results in a phase-shift such that partial waves add up destructively leading to a small value of |{tilde over (R)}.sub.1,2| and low reflectivity, especially in the wavelength range centered around thermal wavelength. On the other hand, in reverse bias (insulating VO.sub.2) phasors add constructively, giving rise to highly reflective surface properties for a broad range of wavelengths. A similar phenomenon can be observed for TM polarization as well. As the KBr layer 24 is transparent and has a negligible extinction coefficient for most of infrared region, much of the absorption takes place within the VO.sub.2 layer 22. The transparent layer of KBr 24 can mainly influence the reflective properties by altering the phase of the light propagating through the media. Potentially, any other material transparent to infrared light such as magnesium fluoride or intrinsic silicon can be used. However, optimal dimensions of such an alternative device might be different.

(20) It can therefore be seen that the exemplary embodiments provide a unique and novel high-contrast thermal diode concept that uses a phase change material to achieve a high degree of asymmetry in radiative heat transfer.

(21) While there is shown and described herein certain specific structures embodying various embodiments of the invention, it will be manifest to those skilled in the art that various modifications and rearrangements of the parts may be made without departing from the spirit and scope of the underlying inventive concept and that the same is not limited to the particular forms herein shown and described except insofar as indicated by the scope of the appended claims.