High laser damage threshold reflective light addressing liquid crystal spatial light modulator for linearly polarized light at 1053 nm
11543692 · 2023-01-03
Assignee
Inventors
- Wei Fan (Shanghai, CN)
- Zhibo Xing (Shanghai, CN)
- Dajie Huang (Shanghai, CN)
- He Cheng (Shanghai, CN)
- Gang Xia (Shanghai, CN)
Cpc classification
G02F1/13439
PHYSICS
G02F1/1337
PHYSICS
G02F1/133524
PHYSICS
International classification
G02F1/1335
PHYSICS
Abstract
A high laser damage threshold reflective optically addressed liquid crystal spatial light modulator for shaping 1053 nm linearly polarized light beams, comprising a computer-controlled LCoS electrical addressable spatial light modulator, polarization beam splitter, and polarizer, Liquid crystal cell, analyzer, AC power supply, where the liquid crystal cell comprises a transparent conductive film antireflection film layer, a transparent conductive film base layer, a first transparent conductive layer, a liquid crystal alignment layer, a liquid crystal layer, an alignment element, a reflective film layer, a light guide layer, and a second transparent conductive layer. By changing the transparent conductive layer material of the light-transmitting part of the liquid crystal cell from ITO to gallium nitride material, the damage threshold of the high-energy laser is improved, which facilitates application of beam shaping in high-power laser devices.
Claims
1. A liquid crystal spatial light modulator, comprising a polarization beam splitter (1), a computer-controlled LCoS electrical addressable spatial light modulator (2), a polarizer (3), a liquid crystal cell (4), an analyzer (5), and an AC power supply (6), wherein the liquid crystal cell (4) further comprises a transparent conductive film antireflection film layer (41), a transparent conductive film base layer (42), a first transparent conductive layer (43), a first liquid crystal alignment layer (44), a liquid crystal layer (45), an aligner (46), a second liquid crystal orientation layer (47), a reflective film layer (48), a light guide layer (49), a second transparent conductive layer (410), wherein the first transparent conductive layer (43) and the second transparent conductive layer (410) use different material; the light guide layer (49) also serves as a base layer of the second transparent conductive layer (410) and uses a material different from the transparent conductive film base layer (42); the reflective film layer (48) is located between the second liquid crystal orientation layer (47) and the light guide layer (49); the first transparent conductive layer (43) and the second transparent conductive layer (410) are connected with an AC power supply (6); the aligner (46) is located on the first liquid crystal alignment layer (44) and the second liquid crystal alignment layer (47) and surrounds the liquid crystal layer (45); and the modulator is for linearly polarized light at 1053 nm.
2. The modulator according to claim 1, wherein a read-out light enters the transparent conductive film antireflection film layer (41), sequentially passes through the transparent conductive film base layer (42), the first transparent conductive layer (43), the first liquid crystal alignment layer (44), the liquid crystal layer (45), and the second liquid crystal alignment layer (47), and returns and is output through the same optical path after being reflected by the reflective film layer (48); and after a writing light is incident from the second transparent conductive layer (410) and then returned to the original path after being reflected by the reflective film layer (48), an electrical signal on the light guide layer (49) is modulated by the writing light. Consequently, the read-out light is modulated by the electrical signal.
3. The modulator according to claim 1, wherein the first transparent conductive layer (43) has a transmittance of greater than 70% for 1053 nm polarized light and damage threshold fro a pulse width at 10 ns and 1053 nm pulsed light of greater than 1 J/cm.sup.2.
4. The modulator according to claim 1, wherein the first transparent conductive layer (43) is an n-type silicon-doped gallium nitride film or a p-type Magnesium-doped gallium nitride film, and the first transparent conductive layer (43) has a carrier concentration at 1*1018 cm.sup.−3 to 1*1019 cm.sup.−3 and thickness of 0.3 mm to 0.5 mm.
5. The modulator according to claim 1, wherein the second transparent conductive layer (410) is a transparent conductive layer.
6. The modulator according to claim 1, wherein material used for the second transparent conductive layer (410) is indium tin oxide (ITO).
7. The modulator according to claim 1, wherein material used for the light guide layer (49) is bismuth silicate (BSO).
8. The modulator according to claim 1, wherein material used for the light guide layer (49) is zinc oxide (ZnO).
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1)
(2)
(3)
(4) The reference numbers in the figures refer to the following structures:
(5) 1—polarization beam splitter (420 nm to 680 nm); 2—LCoS-type electrically addressed spatial light modulator controlled by computer; 3—polarizer; 4—liquid crystal cell; 5—analyzer; 6—AC power supply;
(6) 41—transparent conductive film antireflection film layer; 42—transparent conductive film base layer; 43—first Transparent conductive layer; 44—first liquid crystal alignment layer; 45—liquid crystal layer; 46—aligner; 47—second liquid crystal alignment layer; 48—reflective film layer; 49—light guide layer; 410—second transparent conductive layer;
(7) 30—liquid crystal cell of the reflective light-addressable liquid crystal spatial light modulator; 31—1053 nm linear polarization light source; 32—diaphragm; 33 and 34—lens groups; 35—charge coupled device (CCD); 36—computer.
DETAILED DESCRIPTION OF THE INVENTION
(8) The present invention is further described in conjunction with the embodiments and drawings, but the protection scope of the present invention should not be limited accordingly.
(9) As shown in
(10) As shown in
(11) As shown in
(12) The first transparent conductive layer (43) and the second transparent conductive layer (410) use different materials.
(13) The liquid crystal layer (45) is a 90° twisted phase alignment liquid crystal, and the thickness d of the liquid crystal layer and the birefringence Δn of the liquid crystal satisfy 2dΔn=√3.
(14) The material of the optical guide layer (49) should satisfy the following requirements: first, the electrical conductivity increases with the increase of the light intensity of the 480 nm writing light and has nothing to do with the light intensity of the 1053 nm readout light; second, the transmittance of the linear polarized light at 1053 nm is high enough; third, it may work as the base layer for the reflective film layer (48) and the second transparent conductive layer (410). Suitable material generally includes bismuth silicate (BSO) or zinc oxide (ZnO).
(15) The AC power supply connected between the first transparent conductive layer (43) and the second transparent conductive layer (410) has a frequency of 100 Hz to 1000 Hz, and its working voltage is determined according to the following principles: when the light guide layer (49) of the liquid crystal cell 4 has no writing light irradiation, the partial pressure of the liquid crystal layer (45) is less than its threshold voltage; when writing light is irradiated on the light guide layer (49) of the liquid crystal cell (4), the partial pressure of the liquid crystal layer (45) is greater than its saturation voltage.
(16) The first transparent conductive layer (43) in the liquid crystal cell (4) has a transmittance of greater than 70% to 1053 nm polarized light, and the damage threshold of 1053 nm pulse light with a pulse width of 10 ns is greater than 1 J/cm.sup.2, and its material uses doped gallium nitride material, generally silicon-doped gallium nitride (n-type doping) or magnesium-doped gallium nitride (p-type doping). The carrier concentration of silicon-doped gallium nitride used is 1*1018 cm.sup.−3 to 1*1019 cm.sup.−3, and the thickness is 0.3 mm to 0.5 mm. The carrier concentration of magnesium-doped gallium nitride used is 1*1018 cm.sup.−3 to 1*1019 cm.sup.−3, and the thickness is 0.3 mm to 0.5 mm.
(17) The second transparent conductive layer (410) in the liquid crystal cell 4 may generally be an indium tin oxide (ITO) material.
(18) As shown in