ACTIVE-MATRIX OLED DISPLAY

Abstract

The present invention relates to an active-matrix OLED display, comprising a plurality of OLED pixels, wherein each pixel itself comprises a stack of organic layers and each layer of the stack of organic layers can form a common semiconductor layer, whereinat least a first OLED pixel and a second OLED pixel comprisingan anode layer, a common cathode layer, at least one emission layer, which is optional a common emission layer, at least a stack of organic layers.

Claims

1.-21. (canceled)

22. An active-matrix OLED display, comprising a plurality of OLED pixels, wherein each pixel itself comprises a stack of organic layers and each layer of the stack of organic layers can form a common semiconductor layer, wherein at least a first OLED pixel and a second OLED pixel comprising an anode layer, a common cathode layer, at least one emission layer, which is optional a common emission layer, at least a stack of organic layers, wherein the stack of organic layers is arranged between the anode layer and cathode layer, comprising a plurality of semiconductor layers, and the plurality of semiconductor layers comprising at least two or more common semiconductor layers, wherein the plurality of semiconductor layers comprising at least a first common semiconductor layer comprises at least one organic p-dopant, at least a second common semiconductor layer, a common semiconductor layer extends over all pixels of the plurality of pixels or extends over at least two pixels of the plurality of pixels in the OLED display, and wherein the first common semiconductor comprises at least one organic p-dopant and the second common semiconductor layer have together a sheet resistance of ?50 giga ohms per square.

23. The active-matrix OLED display according to claim 22, wherein the organic p-dopant is selected from the group comprising a substituted or unsubstituted 3-radialene, a substituted or unsubstituted quinone, a substituted or unsubstituted quinoid, and a substituted or unsubstituted aromatic compound that comprises condensed rings.

24. The active-matrix OLED display according to claim 23, wherein the 3-radialene compound is represented by Formula (1): ##STR00086## wherein A.sup.1, A.sup.2 and A.sup.3 are independently selected from Formula (2): ##STR00087## wherein * is the binding position of A.sup.1, A.sup.2 and A.sup.3 to the double bond of formula (1), R is independently selected from the group comprising substituted or unsubstituted aryl, substituted or unsubstituted heteroaryl, substituted or unsubstituted alkyl, substituted or unsubstituted C.sub.6 to C.sub.24 aryl, substituted or unsubstituted C.sub.2 to C.sub.20 heteroaryl, substituted or unsubstituted C.sub.1 to C.sub.8 alkyl; wherein the substituent on R is independently selected from the group comprising electron-withdrawing group, CN, halogen, Cl, F, partially fluorinated or perfluorinated alkyl, partially fluorinated or perfluorinated alkoxy, partially fluorinated or perfluorinated C.sub.1 to C.sub.10 alkyl, partially fluorinated or perfluorinated C.sub.1 to C.sub.6 alkoxy, CF.sub.3, OCF.sub.3, D or H; R is selected from the group comprising an electron-withdrawing group, CN, substituted or unsubstituted alkyl, substituted or unsubstituted heteroaryl, substituted or unsubstituted aryl, perfluorinated alkyl, substituted or unsubstituted C.sub.1 to C.sub.8 alkyl, substituted or unsubstituted C.sub.2 to C.sub.20 heteroaryl, substituted or unsubstituted C.sub.6 to C.sub.24 aryl, perfluorinated C.sub.1 to C.sub.8 alkyl, CF.sub.3, NO.sub.2 or F; wherein the substituent on R is independently selected from the group comprising electron-withdrawing group, CN, halogen, Cl, F, partially fluorinated or perfluorinated alkyl, partially fluorinated or perfluorinated alkoxy, partially fluorinated or perfluorinated C.sub.1 to C.sub.10 alkyl, partially fluorinated or perfluorinated C.sub.1 to C.sub.6 alkoxy, CF.sub.3, OCF.sub.3, D or H; wherein R and R together optional form a substituted or unsubstituted carbocycle or substituted or unsubstituted heterocycle, substituted or unsubstituted heterocycle; wherein the substituents are independently selected from the group comprising electron-withdrawing group, F, CN, perfluorinated C.sub.1 to C.sub.8 alkyl, substituted or unsubstituted C.sub.6 to C.sub.18 aryl, substituted or unsubstituted C.sub.2 to C.sub.18 heteroaryl, substituted or unsubstituted C.sub.3 to C.sub.18 carbocyclene, substituted or unsubstituted C.sub.3 to C.sub.18 carbocyclidene, substituted or unsubstituted C.sub.1 to C.sub.8 alkylene, substituted or unsubstituted C.sub.1 to C.sub.8 alkylidene; wherein the substituents are selected from the group comprising an electron-withdrawing group, halogen, F, Cl, CN, perfluorinated alkyl, perfluorinated C.sub.1 to C.sub.8 alkyl, CF.sub.3, partially fluorinated or perfluorinated alkylaryl, partially fluorinated or perfluorinated C.sub.6 to C.sub.18 alkylaryl.

25. The active-matrix OLED display according to claim 24, wherein R is independently selected from the group comprising substituted or unsubstituted C.sub.6 to C.sub.24 aryl, substituted or unsubstituted C.sub.2 to C.sub.20 heteroaryl; R independently selected from an electron-withdrawing group, CN, CF.sub.3, NO.sub.2, or F.

26. The active-matrix OLED display according to claim 24, wherein A.sup.1, A.sup.2 and A.sup.3 are selected A.sup.1=A.sup.2?A.sup.3, or A.sup.1?A.sup.2 and A.sup.1?A.sup.3 and A.sup.2=A.sup.3.

27. The active-matrix OLED display according to claim 24, wherein A.sup.1 is selected from Formulae (3) or (4): ##STR00088## wherein X.sup.1 is selected from CR.sup.1 or N; X.sup.2 is selected from CR.sup.2 or N; X.sup.3 is selected from CR.sup.3 or N; X.sup.4 is selected from CR.sup.4 or N; X.sup.5 is selected from CR.sup.5 or N; R.sup.1, R.sup.2, R.sup.3, R.sup.4, and R.sup.5 are independently selected from a group comprising electron-withdrawing group, CN, halogen, Cl, F, partially fluorinated or perfluorinated alkyl, partially fluorinated or perfluorinated C.sub.1 to C.sub.10 alkyl, CF.sub.3, partially fluorinated or perfluorinated alkoxy, partially fluorinated or perfluorinated C.sub.1 to C.sub.6 alkoxy, D or H; wherein at least two of X.sup.1 to X.sup.5 are independently selected from CR.sup.1 to CR.sup.5; and wherein * on Formulae (3) and (4) is the binding position of A.sup.1 to the double bond of formula (1).

28. The active-matrix OLED display according to claim 24, wherein A.sup.1 is selected from a group comprising of D1 to D210: ##STR00089## ##STR00090## ##STR00091## ##STR00092## ##STR00093## ##STR00094## ##STR00095## ##STR00096## ##STR00097## wherein * of the substituent ##STR00098## on the groups D1 to D210 indicates the binding position of A.sup.1 to the double bond of formula (1).

29. The active-matrix OLED display according to claim 23, wherein the quinone of the organic p-dopant has the Formula (5) and the quinoid of the organic p-dopant has the Formula (6), ##STR00099## wherein A.sup.1 and A.sup.2 are independently selected from formula (7): ##STR00100## or NR, wherein * is the binding position of A.sup.1 and A.sup.2 to the double bond of formula (5) and formula (6): R is selected from an electron-withdrawing group, substituted or unsubstituted alkyl, substituted or unsubstituted heteroaryl, substituted or unsubstituted aryl, perfluorinated alkyl, substituted or unsubstituted C.sub.1 to C.sub.8 alkyl, substituted or unsubstituted C.sub.2 to C.sub.20 heteroaryl, substituted or unsubstituted C.sub.6 to C.sub.24 aryl, perfluorinated C.sub.1 to C.sub.8 alkyl, CF.sub.3, NO.sub.2, F, CN, wherein the substituent on R are independently selected from a group comprising D, H, electron-withdrawing group, CN, halogen, Cl, F, partially fluorinated or perfluorinated alkyl, partially fluorinated or perfluorinated C.sub.1 to C.sub.10 alkyl, CF.sub.3, partially fluorinated or perfluorinated alkoxy, partially fluorinated or perfluorinated C.sub.1 to C.sub.6 alkoxy, or OCF.sub.3; R an electron-withdrawing group, substituted or unsubstituted alkyl, substituted or unsubstituted heteroaryl, substituted or unsubstituted aryl, perfluorinated alkyl, substituted or unsubstituted C.sub.1 to C.sub.8 alkyl, substituted or unsubstituted C.sub.2 to C.sub.20 heteroaryl, substituted or unsubstituted C.sub.6 to C.sub.24 aryl, perfluorinated C.sub.1 to C.sub.8 alkyl, CF.sub.3, NO.sub.2, F, CN, wherein the substituent on R are independently selected from a group comprising electron-withdrawing group, CN, halogen, Cl, F, partially fluorinated or perfluorinated alkyl, partially fluorinated or perfluorinated C.sub.1 to C.sub.10 alkyl, CF.sub.3, partially fluorinated or perfluorinated alkoxy, partially fluorinated or perfluorinated C.sub.1 to C.sub.6 alkoxy OCF.sub.3, D or H; wherein R and R together optional form a substituted or unsubstituted cycle, and wherein the substituted or unsubstituted cycle can be substituted or unsubstituted carbocyclic or substituted or unsubstituted heterocyclic, substituted or unsubstituted heterocyclic; R is selected from a bond, substituted or unsubstituted C.sub.1 to C.sub.18 alkyl, substituted or unsubstituted C.sub.6 to C.sub.24 aryl, substituted or unsubstituted C.sub.6 to C.sub.24 heteroaryl, CN, wherein the substituent on R is independently selected from a group comprising substituted or unsubstituted C.sub.6 to C.sub.24 aryl, electron-withdrawing group, CN, F, CF.sub.3, perfluorinated C.sub.1 to C.sub.8 alkyl; R.sup.1, R.sup.2, R.sup.3, and R.sup.4 are independently selected from a group comprising electron-withdrawing group, halogen, substituted or unsubstituted alkyl, partially fluorinated or perfluorinated alkyl, substituted or unsubstituted aryl, substituted or unsubstituted heteroaryl, substituted alkoxy, partially fluorinated or perfluorinated alkoxy, partially fluorinated or perfluorinated alkylaryl, O, S, substituted or unsubstituted N, F, Cl, CN, substituted or unsubstituted C.sub.1 to C.sub.8 alkyl, partially fluorinated or perfluorinated C.sub.1 to C.sub.8 alkyl, CF.sub.3, substituted or unsubstituted C.sub.6 to C.sub.24 aryl, substituted or unsubstituted C.sub.2 to C.sub.20 heteroaryl, substituted or unsubstituted C.sub.1 to C.sub.8 alkoxy, partially fluorinated or perfluorinated C.sub.1 to C.sub.8 alkoxy, OCF.sub.3, substituted or unsubstituted C.sub.1 to C.sub.8 alkyl, CF.sub.3, partially fluorinated or perfluorinated C.sub.6 to C.sub.24 alkylaryl, wherein the substituent on R.sup.1, R.sup.2, R.sup.3, and R.sup.4 are independently selected from a group comprising an electron-withdrawing group, substituted or unsubstituted alkyl, substituted or unsubstituted heteroaryl, substituted or unsubstituted aryl, perfluorinated alkyl, CN, substituted or unsubstituted C.sub.1 to C.sub.8 alkyl, substituted or unsubstituted C.sub.2 to C.sub.20 heteroaryl, substituted or unsubstituted C.sub.6 to C.sub.24 aryl, perfluorinated C.sub.1 to C.sub.8 alkyl, CF.sub.3, NO.sub.2, F; wherein R.sup.1 and R.sup.2 together, or R.sup.3 and R.sup.4 together optional form independently from each other a substituted or unsubstituted carbocycle or substituted or unsubstituted heterocycle, substituted or unsubstituted heterocycle; wherein the substituents are independently selected from a group comprising an electron-withdrawing group, F, CN, perfluorinated C.sub.1 to C.sub.8 alkyl, perfluorinated C.sub.1 to C.sub.8 alkoxy, OCF.sub.3; substituted or unsubstituted C.sub.6 to C.sub.18 aryl, substituted or unsubstituted C.sub.2 to C.sub.18 heteroaryl, substituted or unsubstituted carbocyclene, substituted or unsubstituted carbocyclidene, substituted or unsubstituted alkylene, substituted or unsubstituted alkylidene; wherein the substituents are independently selected from a group comprising an electron-withdrawing group halogen, F, Cl, CN, perfluorinated alkyl, CF.sub.3, partially fluorinated or perfluorinated alkylaryl, partially fluorinated or perfluorinated C.sub.6 to C.sub.18 alkylaryl, perfluorinated C.sub.1 to C.sub.8 alkoxy, or OCF.sub.3; wherein A.sup.1 and R.sup.3 together and A.sup.2 and R together optional independently from each other form a substituted or unsubstituted heterocyclic ring; wherein the substituents are independently selected from a group comprising substituted or unsubstituted C.sub.6 to C.sub.18 aryl, substituted or unsubstituted carbocyclene, substituted or unsubstituted carbocyclidene, substituted or unsubstituted alkylene, substituted or unsubstituted alkylidene; wherein the substituents are independently selected from a group comprising electron-withdrawing group halogen, F, Cl, CN, perfluorinated alkyl, CF.sub.3, partially fluorinated or perfluorinated alkylaryl, partially fluorinated or perfluorinated C.sub.6 to C.sub.18 alkylaryl.

30. The active-matrix OLED display according to claim 24, wherein A.sup.1 and A.sup.2 is independently selected from a group D1 to D8: ##STR00101## wherein * is the binding position of A.sup.1, A.sup.2 and A.sup.3 to the double bond of formula (1), and A.sup.1 and A.sup.2 of formula (5) and formula (6).

31. The active-matrix OLED display according to any of the preceding claim 24, wherein A.sup.1 and A.sup.2 is selected from Formulae (8) to (13): ##STR00102## wherein X.sup.1 is selected from CR.sup.1 or N; X.sup.2 is selected from CR.sup.2 or N; X.sup.3 is selected from CR.sup.3 or N; X.sup.4 is selected from CR.sup.4 or N; X.sup.5 is selected from CR.sup.5 or N; wherein one of R.sup.1, R.sup.2, R.sup.3, R.sup.4, and R.sup.5 are independently selected from electron-withdrawing group, halogen, partially fluorinated or perfluorinated alkyl, partially fluorinated or perfluorinated alkoxy, D or H, CN, Cl, F, partially fluorinated or perfluorinated C.sub.1 to C.sub.10 alkyl, CF.sub.3, partially fluorinated or perfluorinated C.sub.1 to C.sub.6 alkoxy; wherein at least two of X.sup.1 to X.sup.5 are independently selected from CR.sup.1 to CR.sup.5.

32. The active-matrix OLED display according to claim 23, wherein the compounds of p-dopants comprising quinone or quinoid have the following structure E1 to E11: ##STR00103##

33. The active-matrix OLED display according to claim 23, wherein the substituted or unsubstituted aromatic compound that comprises condensed rings are represented by Formulae (14a), (14b), (14c), (14d), (14e) and Formula (15): ##STR00104## wherein A.sup.1 is selected from ##STR00105## or NR, wherein * is the binding position of A.sup.1 to the double bond of formula (14), wherein R is selected from an electron-withdrawing group, substituted or unsubstituted alkyl, substituted or unsubstituted heteroaryl, substituted or unsubstituted C.sub.2 to C.sub.20 heteroaryl, substituted or unsubstituted aryl, substituted or unsubstituted C.sub.6 to C.sub.24 aryl, perfluorinated alkyl, substituted or unsubstituted C.sub.1 to C.sub.8 alkyl, CN, substituted or unsubstituted C.sub.2 to C.sub.20 heteroaryl, substituted or unsubstituted C.sub.6 to C.sub.24 aryl, C.sub.1 to C.sub.8 alkyl, perfluorinated C.sub.1 to C.sub.8 alkyl, CF.sub.3, NO.sub.2, F, wherein the substituent on R are independently selected from a group comprising electron-withdrawing group, CN, halogen, Cl, F, partially fluorinated or perfluorinated alkyl, partially fluorinated or perfluorinated C.sub.1 to C.sub.10 alkyl, CF.sub.3, partially fluorinated or perfluorinated alkoxy, partially fluorinated or perfluorinated C.sub.1 to C.sub.6 alkoxy, OCF.sub.3, D or H; R is selected from an electron-withdrawing group, substituted or unsubstituted alkyl, substituted or unsubstituted heteroaryl, substituted or unsubstituted C.sub.2 to C.sub.20 heteroaryl, substituted or unsubstituted aryl, substituted or unsubstituted C.sub.6 to C.sub.24 aryl, perfluorinated alkyl, substituted or unsubstituted C.sub.1 to C.sub.8 alkyl, CN, substituted or unsubstituted C.sub.2 to C.sub.20 heteroaryl, substituted or unsubstituted C.sub.6 to C.sub.24 aryl, C.sub.1 to C.sub.8 alkyl, perfluorinated C.sub.1 to C.sub.8 alkyl, CF.sub.3, NO.sub.2, F, wherein the substituent on R are independently selected from a group comprising electron-withdrawing group, CN, halogen, Cl, F, partially fluorinated or perfluorinated alkyl, partially fluorinated or perfluorinated C.sub.1 to C.sub.10 alkyl, CF.sub.3, partially fluorinated or perfluorinated alkoxy, partially fluorinated or perfluorinated C.sub.1 to C.sub.6 alkoxy, OCF.sub.3, D or H; R is selected from a bond, substituted or unsubstituted C.sub.1 to C.sub.18 alkyl, substituted or unsubstituted C.sub.6 to C.sub.24 aryl, substituted or unsubstituted C.sub.6 to C.sub.24 heteroaryl, CN, wherein the substituent on R is independently selected from a group comprising substituted or unsubstituted C.sub.6 to C.sub.24 aryl, electron-withdrawing group, CN, F, CF.sub.3, perfluorinated C.sub.1 to C.sub.8 alkyl; R.sup.1 and R.sup.2 are independently selected from a group comprising electron-withdrawing group, halogen, F, Cl, CN, substituted alkyl, substituted C.sub.1 to C.sub.8 alkyl, partially fluorinated or perfluorinated C.sub.1 to C.sub.8 alkyl, CF.sub.3, substituted or unsubstituted aryl, substituted or unsubstituted C.sub.6 to C.sub.24 aryl, substituted or unsubstituted heteroaryl, substituted or unsubstituted C.sub.2 to C.sub.20 heteroaryl, substituted C.sub.1 to C.sub.8 alkoxy, partially fluorinated or perfluorinated C.sub.1 to C.sub.8 alkoxy, OCF.sub.3, partially fluorinated or perfluorinated alkylaryl, partially fluorinated or perfluorinated C.sub.6 to C.sub.24 alkylaryl, O, S, N; wherein the substituent on R.sup.1 and R.sup.2 are independently selected from a group comprising an electron-withdrawing group, CN, substituted or unsubstituted alkyl, substituted or unsubstituted C.sub.1 to C.sub.8 alkyl, substituted or unsubstituted heteroaryl, substituted or unsubstituted C.sub.2 to C.sub.20 heteroaryl, substituted or unsubstituted aryl, substituted or unsubstituted C.sub.6 to C.sub.24 aryl, perfluorinated alkyl, perfluorinated C.sub.1 to C.sub.8 alkyl, CF.sub.3, NO.sub.2, F; wherein R.sup.1 and R.sup.2 together optional form a substituted or unsubstituted carbocycle or substituted or unsubstituted heterocycle, substituted or unsubstituted carbocycle; wherein the substituents on the cycle are selected from a group comprising electron-withdrawing group, F, CN, perfluorinated C.sub.1 to C.sub.8 alkyl, perfluorinated C.sub.1 to C.sub.8 alkoxy, OCF.sub.3; substituted or unsubstituted C.sub.6 to C.sub.18 aryl, substituted or unsubstituted C.sub.2 to C.sub.18 heteroaryl, substituted or unsubstituted carbocyclene, substituted or unsubstituted carbocyclidene, substituted or unsubstituted alkylene, substituted or unsubstituted alkylidene; wherein the substituents are selected from a group comprising an electron-withdrawing group halogen, F, Cl, CN, perfluorinated alkyl, perfluorinated C.sub.1 to C.sub.8 alkyl, CF.sub.3, partially fluorinated or perfluorinated alkylaryl, partially fluorinated or perfluorinated C.sub.6 to C.sub.18 alkylaryl, perfluorinated C.sub.1 to C.sub.8 alkoxy, OCF.sub.3; Y is independently selected from each other from N or CR.sup.a, R.sup.a is independently selected from a group comprising H, D, electron-withdrawing group, CN, substituted or unsubstituted C.sub.1 to C.sub.8 alkyl, perfluorinated C.sub.1 to C.sub.8 alkyl, CF.sub.3, perfluorinated C.sub.1 to C.sub.8 alkoxy, OCF.sub.3; wherein the substituents on R.sup.a are independently selected from a group comprising electron-withdrawing group, CN, halogen, Cl, F, partially fluorinated or perfluorinated alkyl, partially fluorinated or perfluorinated C.sub.1 to C.sub.10 alkyl, CF.sub.3, partially fluorinated or perfluorinated alkoxy, partially fluorinated or perfluorinated C.sub.1 to C.sub.6 alkoxy, OCF.sub.3, D or H; wherein two R.sup.a optional form a substituted or unsubstituted carbocycle or substituted or unsubstituted heterocycle, substituted or unsubstituted carbocycle; wherein the substituents on the cycle independently selected from a group comprising electron-withdrawing group, F, CN, perfluorinated C.sub.1 to C.sub.8 alkyl, perfluorinated C.sub.1 to C.sub.8 alkoxy, OCF.sub.3; substituted or unsubstituted C.sub.6 to C.sub.18 aryl, substituted or unsubstituted C.sub.2 to C.sub.18 heteroaryl, substituted or unsubstituted carbocyclene, substituted or unsubstituted carbocyclidene, substituted or unsubstituted alkylene, substituted or unsubstituted alkylidene; wherein two Y optional form a substituted or unsubstituted carbocycle or substituted or unsubstituted heterocycle, substituted or unsubstituted carbocycle; wherein the substituents on the cycle can be electron-withdrawing group, F, CN, perfluorinated C.sub.1 to C.sub.8 alkyl, perfluorinated C.sub.1 to C.sub.8 alkoxy, OCF.sub.3; substituted or unsubstituted C.sub.6 to C.sub.18 aryl, substituted or unsubstituted C.sub.2 to C.sub.18 heteroaryl, substituted or unsubstituted carbocyclene, substituted or unsubstituted carbocyclidene, substituted or unsubstituted alkylene, substituted or unsubstituted alkylidene; ##STR00106## wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, Rs, and R.sup.6 are independently selected from a group comprising H, F, CN, CF.sub.3, and NO.sub.2, wherein at least one of R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, and R.sup.6 is F, CN, CF.sub.3, or NO.sub.2.

34. The active-matrix OLED display according to claim 23, wherein the substituted or unsubstituted aromatic compound that comprises condensed rings having a structure of G1 to G4: ##STR00107##

35. The active-matrix OLED display according to claim 29, wherein at least one R.sup.1 and R.sup.2 are independently selected from a group comprising CN, OCF.sub.3, CF.sub.3, F, perfluorinated C.sub.1 to C.sub.8 alkyl, substituted C.sub.6 to C.sub.24 aryl, wherein the substituent is F, CF.sub.3, CN, substituted C.sub.1 to C.sub.8 alkylene.

36. The active-matrix OLED display according to claim 22, wherein the first common semiconductor layer is a common hole injection layer.

37. (canceled)

38. The active-matrix OLED display according to claim 22, wherein the first common semiconductor layer comprises at least one organic p-dopant is in direct contact to the anode layer, wherein the second common semiconductor layer is arranged between the first semiconductor layer and the emission layer.

39. The active-matrix OLED display according to claim 22, wherein the second common semiconductor layer is a common hole transport layer or a common electron blocking layer.

40. The active-matrix OLED display according to claim 22, wherein the common first hole injection layer is in direct contact with the second common semiconductor layer that is a common hole transport layer or a common electron blocking layer.

41. The active-matrix OLED display according to claim 22, wherein the sheet resistance is determined by transmission line method.

42. (canceled)

43. (canceled)

44. (canceled)

45. (canceled)

46. The active-matrix OLED display according to claim 22, wherein the first common semiconductor layer is shared by the plurality of OLED pixels.

47. (canceled)

48. (canceled)

49. The active-matrix OLED display according to claim 22, wherein the common hole injection layer consists of the organic p-dopant or the common hole transport layer comprises the organic p-dopant and a hole transport material.

50. The active-matrix OLED display according to claim 22, wherein the common stack of organic layers comprises in addition a common organic layer selected from the group comprising common electron injection layer, common hole blocking layer.

51. The active-matrix OLED display according to claim 22, wherein the electron transport layer is in direct contact with the common cathode layer.

52. The active-matrix OLED display according to claim 22, wherein the common electron injection layer is in direct contact with the common cathode layer.

53. The active-matrix OLED display according to claim 22, wherein the active-matrix OLED display comprises a driving circuit configured to separately driving the pixels of the plurality of organic-light emitting diode pixels.

54. The active-matrix OLED display according to claim 22, wherein the second common semiconductor layer is shared by the plurality of OLED pixels.

55. The active-matrix OLED display according to claim 22, wherein all common semiconductor layers are shared by the plurality of OLED pixels.

Description

DESCRIPTION OF THE DRAWINGS

[0475] The aforementioned components, as well as the claimed components and the components to be used in accordance with the invention in the described embodiments, are not subject to any special exceptions with respect to their size, shape, material selection and technical concept such that the selection criteria known in the pertinent field can be applied without limitations.

[0476] Additional details, characteristics and advantages of the object of the invention are disclosed in the dependent claims and the following description of the respective figures which in an exemplary fashion show preferred embodiment according to the invention. Any embodiment does not necessarily represent the full scope of the invention, however, and reference is made therefore to the claims and herein for interpreting the scope of the invention. It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are intended to provide further explanation as claimed.

FIGS. 1 to 9

[0477] FIG. 1 is a schematic sectional view of a display with two pixels and a common HIL, a common HTL and a common cathode layer;

[0478] FIG. 2 is a schematic sectional view of a test element;

[0479] FIG. 3 is a schematic sectional view of deposited layer stack.

[0480] FIG. 4 is a schematic sectional view of a test element;

[0481] FIG. 5 shows an ITO coated substrate;

[0482] FIG. 6 is a diagram of a current-voltage measurement;

[0483] FIG. 7 is an exemplary diagram of resistances;

[0484] FIG. 8 is a schematic sectional view of an organic light-emitting diode;

[0485] FIG. 9 is a schematic sectional view of an organic light-emitting diode.

[0486] Hereinafter, the FIGS. 1 to 4 are illustrated in more detail with reference to examples. However, the present disclosure is not limited to the following figures.

[0487] Herein, when a first element is referred to as being formed or disposed on or onto a second element, the first element can be disposed directly on the second element, or one or more other elements may be disposed there between. When a first element is referred to as being formed or disposed directly on or directly onto a second element, no other elements are disposed there between.

[0488] FIG. 1 is a schematic sectional view of a display with two pixels (100; 200), according to an exemplary embodiment. The first pixel (100) comprises an anode layer (120) and the second pixel comprises an anode layer (120). The first pixel (100) has its own anode layer (120) and the second pixel (200) has its own anode (120), wherein the anode (120) of the first pixel (100) does not touch the anode layer (120) of the other second pixels (200). Between anode (120) of the first pixel (100) and the anode (120) of the second pixel (200) a pixel definition layer (125) may be arranged. A common hole injection layer (HIL) (130) is disposed on the anode layers (120) extending from the first pixel (100) to the second pixel (200). Onto the common HIL (130) a common hole transport layer (HTL) (140) is disposed extending from the first pixel (100) to the second pixel (200). Onto the hole transport layer (HTL) (140), an electron blocking layer (EBL) (145) is disposed such that the first pixel (100) has its own electron blocking layer (EBL) (145) and the second pixel (200) has its own electron blocking layer (EBL) (145), the electron blocking layer (EBL) (145) of the first pixel (100) can touch the electron blocking layer (EBL) (145) of the other second pixels (200). Onto the electron blocking layer (EBL) (145), a light emitting layer (EML) (150) is disposed such that the first pixel (100) has its own light emitting layer (EML) (150) and the second pixel (200) has its own light emitting layer (EML) (150), wherein the light emitting layer (EML) (150) of the first pixel (100) can touch the light emitting layer (EML) (150) of the other second pixels (200). Onto the light emitting layer (EML) (150), an electron transport layer (ETL) (160) is disposed such that the first pixel (100) has its own electron transport layer (ETL) (160) and the second pixel (200) has its own electron transport layer (ETL) (160). Onto the electron transport layer (ETL) (160), a common cathode layer (190) is disposed extending from the first pixel (100) to the second pixel (200). Between the first pixel (100) and the second pixel (200) a separation section (300) is arranged that has no anode layer (120) but a pixel definition layer (125) function as a sheet resistance layer, which is not an anode (120).

[0489] As can be seen in FIG. 1 the separation section (300) comprises at least one layer, which is a common hole injection layer (HIL) (130) and extends as a common layer from pixel (100) through the separation section (300) to pixel (200). The separation section (300) comprises at least two layers that are an electron blocking layer (EBL) (145) and a light emitting layer (EML) (150), which each extends from the pixel (100) and pixel (200) into the separation section (300). The electron transport layer (ETL) (160) and the hole transport layer (HTL) (140) of the separation section (300), do not extend into the pixel (100) and pixel (200).

[0490] FIG. 1 is an example only and the present invention is not restricted to this embodiment. There are a plurality of layer configuration possible in which a layer for example extends from one pixel into the separation section (300) or not. Further the material composition of each non common layer of the plurality of pixels and separation sections, such as pixel (100), (200) and the separation section (300), can be selected individually different and or same.

[0491] FIG. 2 shows the test element comprising 2 highly conductive electrodes with a gap I between the 2 highly conductive electrodes and a width w for the respective highly conductive electrodes.

[0492] FIG. 3 shows schematic representation of a deposited layer stack on a test element group for determining the sheet resistance. The test element consists of a channel (test element). The deposition layer (300) lies on top of the electrode.

[0493] FIG. 4 shows the test element comprising 2 highly conductive electrodes with interdigitated finger pattern with a gap 1 between electrode fingers and total width w as product of interdigitation width we and number of interdigitation areas.

[0494] FIG. 5 shows an ITO coated substrate with 90 nm ITO with 10 Ohm/sq sheet resistance patterned with electrode pairs with 4 different channel lengths combined on one substrate with 25?25 mm.sup.2 dimension.

[0495] FIG. 6 shows an exemplary diagram of a current-voltage measurement on a substrate shown in FIG. 5.

[0496] FIG. 7 shows an exemplary diagram of resistances derived from current-voltage measurement displayed in FIG. 6 plotted over corresponding channel length and calculation of slope thereof.

[0497] FIG. 8 is a schematic sectional view of an organic light-emitting diode (OLED) 100, according to an exemplary embodiment of the present invention. The OLED 100 includes a substrate (110), an anode layer (120) that comprises a first anode sub-layer (121) and a second anode sub-layer (122), a semiconductor layer comprising compound of Formula (I) (130), a hole transport layer (HTL) (140), an electron blocking layer (EBL) (145), an emission layer (EML) (150), a hole blocking layer (EBL) (155), an electron transport layer (ETL) (160) and a cathode layer (190). The layers are disposed exactly in the order as mentioned before.

[0498] FIG. 9 is a schematic sectional view of an organic light-emitting diode (OLED) 100, according to an exemplary embodiment of the present invention. The OLED 100 includes a substrate (110), an anode layer (120) that comprises a first anode sub-layer (121), a second anode sub-layer (122) and a third anode sub-layer (123), a semiconductor layer comprising compound of Formula (I) (130), a hole transport layer (HTL) (140), an electron blocking layer (EBL) (145), an emission layer (EML) (150), a hole blocking layer (EBL) (155), an electron transport layer (ETL) (160) and a cathode layer (190). The layers are disposed exactly in the order as mentioned before.

[0499] Hereinafter, the embodiments are illustrated in more detail with reference to examples. However, the present disclosure is not limited to the following examples.

DETAILED DESCRIPTION

[0500] The invention is furthermore illustrated by the following examples which are illustrative only and non-binding.

[0501] The compound may be prepared as described in the literature or alternative compounds may be prepared following similar compounds as described in the literature.

Calculated HOMO and LUMO

[0502] The HOMO and LUMO are calculated with the program package TURBOMOLE V6.5 (TURBOMOLE GmbH, Litzenhardtstrasse 19, 76135 Karlsruhe, Germany). The optimized geometries and the HOMO and LUMO energy levels of the molecular structures are determined by applying the hybrid functional B3LYP with a 6-31G* basis set in the gas phase. If more than one conformation is viable, the conformation with the lowest total energy is selected. The HOMO and LUMO levels are recorded in electron volt (eV).

Transmission Line Method Described in More Detail

[0503] According the present invention the transmission line method for measuring the sheet resistance the first common semiconductor layer comprising the organic p-dopant and the second common semiconductor layer on the first common semiconductor can be carried out as described below.

Substrate and Sample Preparation

[0504] ITO coated substrates with 90 nm ITO with 10 Ohm/sq sheet resistance were patterned with interdigitated finger structure according to FIG. 4. 12 ITO fingers on both electrodes form a total of 23 conductive areas: n=23. Interdigitation length w.sub.e was 4.5 mm. Thus total channel width was 103.5 mm. Channel length w was varied between 20 and 80 ?m in 20 ?m steps. Electrode pairs with 4 different channel lengths were combined on one substrate with 25?25 mm.sup.2 dimension like displayed in FIG. 5. Organic layers were deposited on the substrate covering the complete interdigitated finger pattern. On the substrates a first common semiconductor layer comprises at least one organic p-dopant with a 10 nm thickness, for example the first common semiconductor layer is a hole injection layer that consists of a doped covalent matrix compound, suitable covalent matrix compounds are described in the specification, was deposited by co-evaporation. The temperature range depends on the material and is limited by the vaporization temperature at which vaporization begins and the decomposition temperature. These values are material parameters and are different for each material. The values are typically between 50? C. and 500? C., mostly between 150? C. and 350? C. For example, the covalent matrix compound deposition took place at constant rate of 1 ?/s (Angstr?m per second) with evaporation source temperature of 272? C. The organic p-dopant source is for example selected from the group comprising a substituted or unsubstituted 3-radialene, a substituted or unsubstituted quinone, a substituted or unsubstituted quinoid, and a substituted or unsubstituted aromatic compound that comprises condensed rings, and more preferred the organic p-dopant may be selected from substituted or unsubstituted 3-radialene compounds, other suitable p-dopants are described in the specification, was for example operated with 0.068 ?/s at 174? C. On this layer the second common semiconductor layer, which is for example a common hole transport layer or a common electron blocking layer, wherein a hole transport layer is preferred, with a thickness of 128 nm was deposited at a deposition rate of 2 ?/s and temperature of 280? C. Chamber pressure was 3e-7 mbar during the whole deposition process. However, as explained above, the evaporation temperatures used depend on the vaporization temperature at which vaporization begins and the decomposition temperature. Evaporation temperatures for organic materials are material dependent and usually between 50? C. and 500? C. The obtained substrate layer device were encapsulated in a Nitrogen filled glovebox using glass lids with integrated desiccant, to prevent sample degradation, after organic layer deposition.

[0505] According to the present invention the transmission line method for measuring the sheet resistance the common first semiconductor layer comprising the organic p-dopant, the common second semiconductor layer on the common first semiconductor and the common third semiconductor layer on the common third semiconductor layer can be carried out as described below.

[0506] ITO coated substrates with 90 nm ITO with 10 Ohm/sq sheet resistance were patterned with interdigitated finger structure according to FIG. 4. 12 ITO fingers on both electrodes form a total of 23 conductive areas: n=23. Interdigitation length w.sub.e was 4.5 mm. Thus total channel width was 103.5 mm. Channel length w was varied between 20 and 80 ?m in 20 ?m steps. Electrode pairs with 4 different channel lengths were combined on one substrate with 25?25 mm.sup.2 dimension like displayed in FIG. 5. Organic layers were deposited on the substrate covering the complete interdigitated finger pattern. On the substrates a first common semiconductor layer comprises at least one organic p-dopant with a 10 nm thickness, for example the first common semiconductor layer is a hole injection layer that consists of a doped covalent matrix compound, suitable covalent matrix compounds are described in the specification, was deposited by co-evaporation. The temperature range depends on the material and is limited by the vaporization temperature at which vaporization begins and the decomposition temperature. These values are material parameters and are different for each material. The values are typically between 50? C. and 500? C., mostly between 150? C. and 350? C. For example, the covalent matrix compound deposition took place at constant rate of 1 ?/s (Angstr?m per second) with evaporation source temperature of 272? C. The organic p-dopant source is for example selected from the group comprising a substituted or unsubstituted 3-radialene, a substituted or unsubstituted quinone, a substituted or unsubstituted quinoid, and a substituted or unsubstituted aromatic compound that comprises condensed rings, and more preferred the organic p-dopant may be selected from substituted or unsubstituted 3-radialene compounds, other suitable p-dopants are described in the specification, was for example operated with 0.068 ?/s at 174? C. On this layer the second common semiconductor layer, which is for example a common hole transport layer or a common electron blocking layer, wherein a hole transport layer is preferred, with a thickness of 128 nm was deposited at a deposition rate of 2 ?/s and temperature of 280? C. On this layer the third common semiconductor layer, which is for example a common electron-blocking layer, with a thickness of 5 nm was deposited at a deposition rate of 1 ?/s and temperature of 244? C. Chamber pressure was 3e-7 mbar during the whole deposition process. However, as explained above, the evaporation temperatures used depend on the vaporization temperature at which vaporization begins and the decomposition temperature. Evaporation temperatures for organic materials are material dependent and usually between 50? C. and 500? C. The obtained substrate layer device were encapsulated in a Nitrogen filled glovebox using glass lids with integrated desiccant, to prevent sample degradation, after organic layer deposition.

[0507] According the present invention the transmission line method for measuring the sheet resistance the common first semiconductor layer comprising the organic p-dopant, the common second semiconductor layer on the common first semiconductor, the common third semiconductor layer on the common second semiconductor layer, and a common light-emitting layer (EML) on the common third semiconductor layer can be carried out as described below.

[0508] The ITO coated substrates with 90 nm ITO with 10 Ohm/sq sheet resistance were patterned with interdigitated finger structure according to FIG. 4. 12 ITO fingers on both electrodes form a total of 23 conductive areas: n=23. Interdigitation length w.sub.e was 4.5 mm. Thus total channel width was 103.5 mm. Channel length w was varied between 20 and 80 ?m in 20 ?m steps. Electrode pairs with 4 different channel lengths were combined on one substrate with 25?25 mm.sup.2 dimension like displayed in FIG. 5. Organic layers were deposited on the substrate covering the complete interdigitated finger pattern. On the substrates a first common semiconductor layer comprises at least one organic p-dopant with a 10 nm thickness, for example the first common semiconductor layer is a hole injection layer that consists of a doped covalent matrix compound, suitable covalent matrix compounds are described in the specification, was deposited by co-evaporation. The temperature range depends on the material and is limited by the vaporization temperature at which vaporization begins and the decomposition temperature. These values are material parameters and are different for each material. The values are typically between 50? C. and 500? C., mostly between 150? C. and 350? C. For example, the covalent matrix compound deposition took place at constant rate of 1 ?/s (Angstr?m per second) with evaporation source temperature of 272? C. The organic p-dopant source is for example selected from the group comprising a substituted or unsubstituted 3-radialene, a substituted or unsubstituted quinone, a substituted or unsubstituted quinoid, and a substituted or unsubstituted aromatic compound that comprises condensed rings, and more preferred the organic p-dopant may be selected from substituted or unsubstituted 3-radialene compounds, other suitable p-dopants are described in the specification, was for example operated with 0.068 ?/s at 174? C. On this layer the second common semiconductor layer, which is for example a common hole transport layer or a common electron blocking layer, wherein a hole transport layer is preferred, with a thickness of 128 nm was deposited at a deposition rate of 2 ?/s and temperature of 280? C. On this layer the third common semiconductor layer, which is for example a common electron-blocking layer, with a thickness of 5 nm was deposited at a deposition rate of 1 ?/s and temperature of 244? C. On this layer the emission layer, which is for example a blue emitting layer, with a thickness of 20 nm was deposited at a deposition rate of 1 ?/s and a temperature of 183? C. for the host compound and at a deposition rate of 0.03 ?/s and a temperature of 197? C. for the emitter dopant. Chamber pressure was 3e-7 mbar during the whole deposition process. However, as explained above, the evaporation temperatures used depend on the vaporization temperature at which vaporization begins and the decomposition temperature. Evaporation temperatures for organic materials are material dependent and usually between 50? C. and 500? C. The obtained substrate layer device were encapsulated in a Nitrogen filled glovebox using glass lids with integrated desiccant, to prevent sample degradation, after organic layer deposition.

General Procedure for Fabrication of OLEDs

[0509] For Examples 1 to 18 and Comparative Example 1, a glass substrate with an anode layer comprising a first anode sub-layer of 120 nm Ag, a second anode sub-layer of 8 nm ITO and a third anode sub-layer of 10 nm ITO was cut to a size of 50 mm?50 mm?0.7 mm, ultrasonically washed with water for 60 minutes and then with isopropanol for 20 minutes.

[0510] Then, substantially covalent matrix compound and a hole injection material were co-deposited in vacuum on the anode layer, to form a hole injection layer (HIL). Then, the substantially covalent matrix compound was vacuum deposited on the HIL, to form a HTL having a thickness of 128 nm. The formula of the substantially covalent matrix compound in the HTL was identical to the substantially covalent matrix compound used in the HIL.

[0511] Then was vacuum deposited on the HTL, to form an electron blocking layer (EBL) having a thickness of 5 nm.

[0512] Then 97 vol.-% H09 (Sun Fine Chemicals, Korea) as EML host and 3 vol.-% BD200 (Sun Fine Chemicals, Korea) as fluorescent blue emitter dopant were deposited on the EBL, to form a blue-emitting first emission layer (EML) with a thickness of 20 nm.

[0513] Then a hole blocking layer was formed with a thickness of 5 nm by depositing 2-(3-(9,9-dimethyl-9H-fluoren-2-yl)-[1,1-biphenyl]-3-yl)-4,6-diphenyl-1,3,5-triazine on the emission layer EML.

[0514] Then the electron transporting layer having a thickness of 31 nm was formed on the hole blocking layer by depositing 50 wt.-% 4-(4-(4-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl)naphthalen-1-yl)-[1,1-biphenyl]-4-carbonitrile and 50 wt.-% of LiQ.

[0515] Then the electron injection layer having a thickness of 2 nm was formed on the electron transporting layer by depositing Ytterbium at a rate of 0.01 to 1 ?/s at 10.sup.?7 mbar.

[0516] Then Ag:Mg (90:10 vol.-%) was evaporated at a rate of 0.01 to 1 ?/s at 10.sup.?7 mbar to form a cathode layer with a thickness of 100 nm on the electron injection layer.

[0517] The OLED stack is protected from ambient conditions by encapsulation of the device with a glass slide. Thereby, a cavity is formed, which includes a getter material for further protection.

[0518] To assess the performance of the inventive examples compared to the prior art, the current efficiency is measured at 20? C. The current-voltage characteristic is determined using a Keithley 2635 source measure unit, by sourcing an operating voltage U in V and measuring the current in mA flowing through the device under test. The voltage applied to the device is varied in steps of 0.1V in the range between 0 V and 10 V. Likewise, the luminance-voltage characteristics and CIE coordinates are determined by measuring the luminance in cd/m.sup.2 using an Instrument Systems CAS-140CT array spectrometer (calibrated by Deutsche Akkreditierungsstelle (DAkkS)) for each of the voltage values.

[0519] Lifetime LT of the device is measured at ambient conditions (20? C.) and 30 mA/cm.sup.2, using a Keithley 2400 source meter, and recorded in hours. The brightness of the device is measured using a calibrated photo diode. The lifetime LT is defined as the time till the brightness of the device is reduced to 97% of its initial value.

[0520] To determine the voltage stability over time U(100 h)-(1 h), a current density of at 30 mA/cm.sup.2 was applied to the device. The operating voltage was measured after 1 hour and after 50 hours, followed by calculation of the voltage stability for the time period of 1 hour to 50 hours.

[0521] Table 2 shows HTL matrix materials that are more preferred and some are used in Table 4.

TABLE-US-00002 TABLE 2 HTL matrix materials [00051] F3 [00052] F2 [00053] F9 [00054] F4 [00055] F21 [00056] F19 [00057] F5 [00058] F18 [00059] F11 [00060] F6 [00061] F1 [00062] F20

[0522] Table 3 shows EBL matrix materials that are more preferred and some are used in Table 4.

TABLE-US-00003 TABLE 3 EBL matrix materials [00063] F22 [00064] F23 [00065] F24 [00066] F25

TABLE-US-00004 TABLE 4 Rs of Rs of HIL HIL, HIL, (p-dopant HIL Rs of HTL, HTL, Voltage EQE concen- Thick- HIL + and EBL, [V] [%] at LT97 tration HIL ness HTL EBL EML at 15 15 at 15 Structure of HIL [wt%]) (Host) [nm] HTL EBL [G?/s]** [G?/s]** [G?/s]** mA/cm mA/cm mA/cm Comparative example 1 [00067] 100 wt % 10 F3 F22 2 2 2 3.99 13.6 100 Inventive example 1 [00068] 2.9 wt % F9 10 F9 F23 958 952 949 3.84 12.4 224 Inventive example 2 [00069] 2 wt % F5 10 F5 F22 386 383 380 3.70 13.8 129 Inventive example 3 [00070] 1.9 wt % F9 10 F9 F23 5481 5474 5470 3.85 12.6 182 Inventive example 4 [00071] 1.8 wt % F5 10 F5 F22 96 96 96 3.68 13.8 134 Inventive example 5 [00072] 10 wt % F19 10 F19 F22 319 316 314 3.82 13.8 45 Inventive example 6 [00073] 10.6 wt % F3 10 F3 F22 298474 296470 295477 3.85 14.7 292 Inventive example 7 [00074] 100 wt % 2 F3 F22 25981 25731 25619 3.89 15.0 81 Inventive example 8 [00075] 100 wt % 5.1 F3 F22 158 157 156 3.89 14.0 88 Inventive example 9 [00076] 1.69 wt % F18 10 F18 F24 556 555 553 3.61 19.8 74 Inventive example 10 [00077] 8.19 F9 10 F9 F24 236 234 232 3.68 17.8 76 Inventive example 11 [00078] 5 wt % F11 11 F11 F24 257 255 254 3.72 13.0 217 Inventive example 12 [00079] 9.7 wt % F5 10 F6 F24 555 553 549 3.88 12.8 81 Inventive example 13 [00080] 11.8 wt % F3 10 F3 F25 285 285 284 3.82 14.3 104 Inventive example 14 [00081] 100 wt % 0.5 F3 F25 62 62 62 3.90 13.1 64 Inventive example 15 [00082] 100 wt % 0.6 F3 F22 138 138 137 3.83 14.5 Inventive example 16 [00083] 100 wt % 1 F3 F22 204 204 202 3.83 13.5 83 Inventive example 17 [00084] 100 wt % 2 F18 F22 405 404 401 3.82 14.3 80 Inventive example 18 [00085] 20.8 wt.- % F3 12 F3 F22 570 565 562 3.88 13.6 92

Technical Effect of the Invention

[0523] As can be seen from Table 4 the device has a beneficial operational voltage since the operational voltage is low and at the same time the sheet resistance is high or higher as 50 giga ohms per square. Moreover, in addition to the operational voltage the EQE and/or the lifetime is improved.

[0524] The particular combinations of elements and features in the above detailed embodiments are exemplary only; the interchanging and substitution of these teachings with other teachings in this and the patents/applications incorporated by reference are also expressly contemplated. As those skilled in the art will recognize, variations, modifications, and other implementations of what is described herein can occur to those of ordinary skill in the art without departing from the spirit and the scope of the invention as claimed. Accordingly, the foregoing description is by way of example only and is not intended as limiting. In the claims, the word comprising does not exclude other elements or steps, and the indefinite article a or an does not exclude a plurality. The mere fact that certain measures are recited in mutually different dependent claims does not indicate that a combination of these measured cannot be used to advantage. The invention's scope is defined in the following claims and the equivalents thereto. Furthermore, reference signs used in the description and claims do not limit the scope of the invention as claimed.