DOT PATTERN PROJECTOR FOR USE IN THREE-DIMENSIONAL DISTANCE MEASUREMENT SYSTEM
20220412729 · 2022-12-29
Assignee
Inventors
Cpc classification
G01B11/254
PHYSICS
H04N13/254
ELECTRICITY
International classification
Abstract
A dot pattern projector includes a light source array, a lens and a diffracting unit. The light source array includes a plurality of light sources that emit light beams. The lens is configured to collimate the light beams. The diffracting unit is configured to diffract the collimated light beams thereby to project an illumination pattern, wherein the illumination pattern is formed by overlapping multiple dot patterns that are projected by different light sources or interlacing multiple dot patterns that are projected by different light sources.
Claims
1. A dot pattern projector, comprising: a light source array, including a plurality of light sources that emit light beams; a lens, configured to collimate the light beams; and a diffracting unit, configured to diffract the collimated light beams thereby to project an illumination pattern; wherein the illumination pattern is formed by overlapping multiple dot patterns that are projected by different light sources or interlacing multiple dot patterns that are projected by the light sources.
2. The dot pattern projector of claim 1, wherein each of the light sources is a vertical-cavity surface-emitting laser (VCSEL).
3. The dot pattern projector of claim 1, wherein a light source pitch between two neighbor light sources is regular.
4. The dot pattern projector of claim 1, wherein the light sources are regularly distributed or hexagonally distributed within the light source array.
5. The dot pattern projector of claim 1, wherein the diffracting unit comprises a microlens array (MLA) or a diffractive optical element (DOE).
6. The dot pattern projector of claim 1, a distance between of the light source array and an optical center of the lens is identical to an effective focal length of the lens.
7. The dot pattern projector of claim 1, wherein if a wavelength of the light beams emitted by the light sources is A, a fan-out angle between a dot of the zero-order diffraction and a dot of the mth-order diffraction in the dot pattern projected by a light source is θ.sub.m, and a cell pitch or a lens pitch of the diffracting unit is D_M, the above-mentioned parameters will have a relationship of: D_M×sin θ.sub.m=mλ.
8. The pattern projection apparatus of claim 1, wherein if a light source pitch between two neighboring light sources is D_L, an effective focal length of the lens is D_EFL, a deviation angle between an optical axis of the lens and a collimated light beam of a light source that is not positioned at the optical axis is a, the above-mentioned parameters have a relationship of:
9. The pattern projection apparatus of claim 1, wherein if the illumination pattern is formed by overlapping the dot patterns projected by different light sources, a deviation angle between an optical axis of the lens and a collimated light beam of a light source that is not positioned at the optical axis is α, and a fan-out angle between a dot of zero-order diffraction and a dot of 1st-order diffraction in the dot pattern projected by a light source is θ.sub.1, the above-mentioned parameters have a relationship of: sin α=sin θ.sub.1.
10. The pattern projection apparatus of claim 1, wherein if the illumination pattern is formed by interlacing the dot patterns projected by different light sources, a deviation angle between an optical axis of the lens and a collimated light beam of a light source that is not positioned at the optical axis is α and a fan-out angle between a dot of zero-order diffraction and a dot of 1st-order diffraction in the dot pattern projected by a light source is θ.sub.1, the above-mentioned parameters have a relationship of: N×sin α=sin θ.sub.1.
11. An optical distance measurement system, comprising: a flood illuminator, including at least one light source and a diffuser, configured to project a first illumination pattern; a dot pattern projector, configured to project a second illumination pattern, comprising: a light source array including a plurality of light sources that emit light beams; a lens, configured to collimate the light beams; and a diffracting unit, configured to diffract the collimated light beams thereby to project an illumination pattern, wherein the illumination pattern is formed by overlapping multiple dot patterns that are projected by different light sources or interlacing multiple dot patterns that are projected by different light sources; and an image capturing device, configured to capture images of illumination pattern reflected from an object.
12. The optical distance measurement system of claim 11, wherein both of the diffuser and the diffracting unit comprise microlens arrays.
13. The optical distance measurement system of claim 11, wherein both of the diffuser and the diffracting unit comprise diffractive optical elements.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0008]
[0009]
[0010]
[0011]
[0012]
[0013]
[0014]
DETAILED DESCRIPTION
[0015] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present embodiments. It will be apparent, however, to one having ordinary skill in the art that the specific detail need not be employed to practice the present embodiments. In other instances, well-known materials or methods have not been described in detail in order to avoid obscuring the present embodiments.
[0016] Reference throughout this specification to “one embodiment” or “an embodiment” means that a particular feature, structure or characteristic described in connection with the embodiment or example is included in at least one embodiment of the present embodiments. Thus, appearances of the phrases “in one embodiment” or “in an embodiment” in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures or characteristics may be combined in any suitable combinations and/or sub-combinations in one or more embodiments.
[0017] Please refer to
[0018] The image capturing device 300 may comprise (but not limited to) a focusing lens, a filter and an image sensor, such as, a complementary metal-oxide semiconductor (CMOS) or a charge-coupled device (CCD) sensor (not shown). The image capturing device 300 is configured to capture images of illumination patterns reflected from the object. According to the images captured by the image sensor 300, depth information regarding the object can be measured.
[0019]
[0020] The lens 140 is arranged to collimate the light beams that are emitted by the light source array 120. Preferably, a distance between of the light source array 120 and an optical center of the lens 140 is identical to an effective focal length D_EFL of the lens 140. Accordingly, with the lens 140, the light beams could be more condensed, thereby allowing dots in the illumination patterns projected by the dot pattern projector 100 to have smaller sizes and higher contrast. The diffracting unit 160 is configured to diffract the light beams thereby to project the illumination patterns having regularly distributed dots as shown by
[0021] In addition, the flood illuminator 200 may comprises a light source and a diffuser, and use a DOE or a MLA as the diffuser. In one embodiment, once the DOE is used as the diffracting unit 160 in the dot pattern projector 100, a DOE will also be used as the diffuser in the flood illuminator 200. On the other hand, once the MLA is used as the diffracting unit 160 in the dot pattern projector 100, a MLA will also be used as the diffuser in the flood illuminator 200. In the case where the MLA is used as the diffracting unit 160, the MLA 160 comprises a plurality of micro lenses that have a plano-convex shape and a lens pitch between two neighboring unit lenses of the MLA 160 is D_M. In the case where the DOE is used as the diffracting unit 160, a cell pitch between neighboring unit cells of the DOE 160 is D_E. In preferable embodiments, the lens pitch D_M of the MLA 160 or the cell pitch D_E of the DOE 160 could be larger than 10 μm, which is relatively easy for fabrication.
[0022] Distribution of dots projected by the light sources 120_1-120_N can be determined according to various parameters. In one embodiment, assuming that a fan-out angle between a dot of zero-order diffraction and a dot of mth-order diffraction of the dot pattern projected by a single light source is Θ.sub.m and a wavelength of the light beam emitted by the light sources is A, a lens pitch of the MLA 160 is D_M, there will be the following relationship between these parameters:
D_M×sin θ.sub.m=mλ;
where m is the diffraction order. In view of this, the fan-out angle Θ.sub.1 between a dot of the zero-order diffraction and a dot of the 1st-order diffraction of the dot pattern will be:
[0023] In addition, as shown by
[0024] Please refer to
(D_L is a pitch between the neighboring light sources; D_EFL is an effective focal length of the lens 140). Therefore, the dot patterns projected by the light sources 120_3-120_4 will be shifted in vertical direction compared to the dot patterns projected by the light sources 120_1-120_2.
[0025] In order to exactly overlap the dot patterns, it is necessary to have:
sin α=sin θ.sub.1
[0026] That is, the deviation angle α by which the collimated light beams of the light sources deviate from the optical axis needs to be identical to the fan-out angle Θ.sub.1 between the dot of the zero-order diffraction and the dot of the 1st-order diffraction. If the light source pitch D_L, the effective focal length D_EFL and the lens pitch D_M (the diffracting unit 160 is a MLA) or the cell pitch D_E (if the diffracting unit 160 is a DOE) are well controlled to satisfy sin α=sin θ, the dot patterns will be shifted by exactly one dot pitch D_P (i.e., a distance between neighboring dots in the dot pattern) in vertical or horizontal direction compared to each other, thereby forming an overlapping-type illumination pattern.
[0027] Please refer to
[0028] In order to interlacing the dot patterns, it is necessary to have:
N×sin α=sin θ
[0029] An interfacing factor N will determine how dot patterns are interlaced. In a case where N is 1, the dot pattern projected by the light sources that are not positioned at the optical axis will be shifted by one dot pitch D_P in vertical or horizontal direction compared to each other, thereby forming the overlapping-type illumination pattern as shown by
[0030] In view of above, the lens pitch D_M of diffracting unit 160 (if the diffracting unit 160 is a MLA) or the cell pitch D_E of the diffracting unit 160 (if the diffracting unit 160 is a DOE) can determine the fan-out angle θ, which affects dot distributions (e.g., dot density) of the dot pattern projected by a single light source. In addition, the light source pitch D_L and the effective focal length D_EFL of the lens 140 can determine the fan-out angle θ, which affects how a dot pattern are shifted compared to each other.
[0031] Assuming that the effective focal length D_EFL is 2 mm and the light source pitch is 30 μm, the lens pitch D_M of diffracting unit 160 (if the diffracting unit 160 is a MLA) or the cell pitch D_E of the diffracting unit 160 can be determined by:
[0032] Therefore, the lens pitch D_M or the cell pitch D_E of diffracting unit 160 will be around 62.7 μm when N=1 (i.e., the overlapping-type) or 31.3 μm when N=2 (i.e., the interlacing-type). Furthermore, to implement an illumination pattern covering a field of interest (FOI): 60° (H) by 40° (V), dimensions of the illumination pattern can be determined by:
D_M×sin(θ.sub.m.sub.
D_M×sin(θ.sub.m.sub.
where θ.sub.mH=(60/2) and θ.sub.mv=(40/2). Therefore, in the overlapping-type (N=1), the diffraction order in the horizontal direction m.sub.H will be ±33, and the diffraction order in the vertical direction my will be ±22. In in the interlaced-type (N=2), the diffraction order in the horizontal direction m.sub.H will be ±16, and the diffraction order in the vertical direction m.sub.V will be ±11. Accordingly, a total number of dots in the illumination pattern can be determined by:
N.sup.2×(2|m.sub.H|+1)×(2|m.sub.V|+1)
[0033] In the case where N=1, m.sub.H=±33 and m.sub.V=±22, the total number of dots will be around 3015, while in the case where N=2, m.sub.H=±16 and m.sub.V=±11, the total number of dots will be around 3036. In view of this, it is possible to change the lens pitch D_M (or cell pitch D_M) in conjunction with the interlacing factor “N” to render similar number of dots in a given FOI. This significantly improves flexibility of design and fabrication of the diffracting unit 160.
[0034]
[0035] In conclusion, embodiments of the present invention provide a dot pattern projector for use in a three-dimensional optical distance measurement system. The dot pattern projector of the present invention can be used in conjunction with a flood illuminator in an optical distance measurement system, thereby to provide high-power illumination patterns and considerably long distance of projection. Both of a diffuser of the flood illuminator and a diffracting unit of the dot pattern projector can be implemented with same types of optical elements (e.g. both are MLA or DOE), thereby simplifying fabrication of the optical distance measurement system. Moreover, embodiments of the present invention allow dot patterns produced by different light sources of a light source array to be overlapped or interlaced, such that parameters of components of the dot pattern projector could have wide ranges of adjustment. This significantly improves the flexibility of the design and the fabrication of the dot pattern projector.
[0036] Those skilled in the art will readily observe that numerous modifications and alterations of the device and method may be made while retaining the teachings of the invention. Accordingly, the above disclosure should be construed as limited only by the metes and bounds of the appended claims.