Mirror driving device and driving method thereof
10371940 ยท 2019-08-06
Assignee
Inventors
Cpc classification
H10N30/2043
ELECTRICITY
H10N30/802
ELECTRICITY
H10N30/208
ELECTRICITY
H10N30/101
ELECTRICITY
G02B26/0858
PHYSICS
International classification
Abstract
A piezoelectric actuator part which generates a driving force to rotate a mirror part about a rotation axis includes a first actuator part and a second actuator part having a both-end supported beam structure in which base end parts on both sides in an axial direction of the rotation axis are fixed. Upper electrodes and lower electrodes of the first actuator part and the second actuator part are divided to correspond to a stress distribution of principal stresses in a piezoelectric body during resonance mode vibration, a piezoelectric portion corresponding to positions of a first piezoelectric conversion part and third piezoelectric conversion parts and a piezoelectric portion corresponding to positions of second piezoelectric conversion parts and a fourth piezoelectric conversion part generate stresses in opposite directions.
Claims
1. A mirror driving device comprising: a mirror having a reflecting surface; a mirror support which is connected to the mirror and supports the mirror so as to be rotatable about a rotation axis, the mirror having a first side and a second side which are disposed opposite to each other across a center of the mirror and along an axial direction of the rotation axis, the mirror support including a first torsion bar and a second torsion bar which are parallel to the axial direction, separated from each other across the mirror and along the axial direction, and connected respectively to the first side and the second side of the mirror; a piezoelectric actuator which is connected to the mirror support and generates a driving force to rotate the mirror about the rotation axis; and a fixing frame which supports the piezoelectric actuator, wherein: the piezoelectric actuator has a laminated structure in which a vibration plate, a lower electrode, a piezoelectric body, and an upper electrode are laminated in this order, and includes a first actuator and a second actuator which are piezoelectric unimorph actuators that are deformed by an inverse piezoelectric effect of the piezoelectric body caused by application of a drive voltage, the first actuator and the second actuator are disposed opposite to each other across the rotation axis and along an orthogonal direction which is orthogonal to both a film thickness direction of the piezoelectric body and the axial direction of the rotation axis, the first actuator is connected to the first torsion bar and the second torsion bar respectively through a first connector and a second connector which are connected to the first actuator respectively at a first connection point and a second connection point, the second actuator is connected to the first torsion bar and the second torsion bar respectively through a third connector and a fourth connector which are connected to the second actuator respectively at a third connection point and a fourth connection point, each of the first actuator and the second actuator is supported by the fixing frame in a both-end supported beam structure, the first actuator has a first base end and a second base end which are disposed opposite to each other along the axial direction and are fixed to the fixing frame, the first base end is further than the first connection point from the center of the mirror, and the second base end is further than the second connection point from the center of the mirror, the first actuator includes a first movable base that extends between the first base end and the second base end and overlaps the mirror, the second actuator has a third base end and a fourth base end which are disposed opposite to each other along the axial direction and are fixed to the fixing frame, the third base end is further than the third connection point from the center of the mirror, and the fourth base end is further than the fourth connection point from the center of the mirror, the second actuator includes a second movable base that extends between the third base end and the fourth base end and overlaps the mirror, the first base end and the third base end are disposed separately from and opposite to each other along the orthogonal direction, and the second base end and the fourth base end are disposed separately from and opposite to each other along the orthogonal direction, the mirror support is driven to be tilted by causing the first actuator and the second actuator to bend in opposite directions, the first actuator has a first upper electrode and a second upper electrode as the upper electrode, and has a first lower electrode and a second lower electrode as the lower electrode, which respectively oppose the first upper electrode and the second upper electrode with the piezoelectric body interposed therebetween, and each of a first piezoelectric converter having the first upper electrode and the first lower electrode as an electrode pair and a second piezoelectric converter having the second upper electrode and the second lower electrode as an electrode pair is constituted by a single or a plurality of electrode pairs, the second actuator has a third upper electrode and a fourth upper electrode as the upper electrode, and has a third lower electrode and a fourth lower electrode as the lower electrode, which respectively oppose the third upper electrode and the fourth upper electrode with the piezoelectric body interposed therebetween, and each of a third piezoelectric converter having the third upper electrode and the third lower electrode as an electrode pair and a fourth piezoelectric converter having the fourth upper electrode and the fourth lower electrode as an electrode pair is constituted by a single or a plurality of electrode pairs, an arrangement of the first piezoelectric converter, the second piezoelectric converter, the third piezoelectric converter, and the fourth piezoelectric converter corresponds to a stress distribution of principal stresses in an in-plane direction orthogonal to the film thickness direction of the piezoelectric body during resonance mode vibration accompanied with tilt displacement of the mirror due to rotation about the rotation axis, and a piezoelectric portion corresponding to positions of the first piezoelectric converter and the third piezoelectric converter and a piezoelectric portion corresponding to positions of the second piezoelectric converter and the fourth piezoelectric converter are configured to generate stresses in opposite directions during the resonance mode vibration.
2. The mirror driving device according to claim 1, wherein: each of the first upper electrode, the second upper electrode, the third upper electrode, the fourth upper electrode, the first lower electrode, the second lower electrode, the third lower electrode and the fourth lower electrode is used as a driving electrode that applies a drive voltage, at least one electrode of the first upper electrode, the second upper electrode, the third upper electrode, the fourth upper electrode, the first lower electrode, the second lower electrode, the third lower electrode and the fourth lower electrode is divided into a plurality of electrodes, and some of the plurality of electrodes are used as electrodes for detection that detect a voltage generated by a piezoelectric effect due to a deformation of the piezoelectric body.
3. The mirror driving device according to claim 1, wherein a drive voltage for piezoelectric driving is applied to at least one electrode of the first lower electrode, the second lower electrode, the third lower electrode, or the fourth lower electrode.
4. The mirror driving device according to claim 1, wherein the mirror, the mirror support, the first actuator, and the second actuator have a line symmetrical form with respect to the rotation axis as an axis of symmetry, in a plan view in a non-driven state.
5. The mirror driving device according to claim 1, wherein the mirror, the mirror support, the first actuator, and the second actuator have a line symmetrical form with respect to a center line which passes through the center of the mirror and is orthogonal to the rotation axis as an axis of symmetry, in a plan view in a non-driven state.
6. The mirror driving device according to claim 1, further comprising a driving circuit which applies a voltage for driving to electrodes constituting at least one of the upper electrodes of the first piezoelectric converter and the third piezoelectric converter, and applies a voltage for driving to electrodes constituting at least one of the lower electrodes of the second piezoelectric converter and the fourth piezoelectric converter, wherein the drive voltage applied to the electrodes constituting at least one of the upper electrodes of the first piezoelectric converter and the third piezoelectric converter, and the drive voltage applied to the electrodes constituting at least one of the lower electrodes of the second piezoelectric converter and the fourth piezoelectric converter are in phase.
7. The mirror driving device according to claim 1, wherein: some of the electrodes of the upper electrode and the lower electrode of each of the first piezoelectric converter, the second piezoelectric converter, the third piezoelectric converter, and the fourth piezoelectric converter are set to be at a floating potential, and a detection circuit which detects a voltage generated by a piezoelectric effect accompanied with deformation of the piezoelectric body from the electrode at the floating potential is provided.
8. The mirror driving device according to claim 1, further comprising a driving circuit which supplies a drive voltage to the piezoelectric actuator, wherein the driving circuit supplies a voltage waveform of the drive voltage for causing the mirror to undergo resonance driving.
9. The mirror driving device according to claim 1, wherein the piezoelectric body used in the piezoelectric actuator is a thin film having a thickness of 1 to 10 ?m and is a thin film directly formed on a substrate which serves as a vibration plate.
10. The mirror driving device according to claim 1, wherein: the piezoelectric body used in the piezoelectric actuator is one or two or more perovskite type oxides represented by the following general formula (P-1),
General formula ABO.sub.3(P-1) in the formula, A is an element in A-site and is at least one element including Pb, B is an element in B-site and is at least one element selected from the group consisting of Ti, Zr, V, Nb, Ta, Sb, Cr, Mo, W, Mn, Sc, Co, Cu, In, Sn, Ga, Zn, Cd, Fe, Mg, Si, and Ni, O is an oxygen element, and the molar ratio among the A-site element, the B-site element, and the oxygen element is 1:1:3 as a standard, and the molar ratio may be deviated from the reference molar ratio within a range in which a perovskite structure is able to be achieved.
11. The mirror driving device according to claim 1, wherein: the piezoelectric body used in the piezoelectric actuator is one or two or more perovskite type oxides represented by the following general formula (P-2),
General formula A.sub.a(Zr.sub.x,Ti.sub.y,M.sub.b-xy).sub.bO.sub.c(P-2) in the formula, A is an element in A-site and is at least one element including Pb, M is at least one element selected from the group consisting of V, Nb, Ta, and Sb, 0<x<b, 0<y<b, and 0?b-x-y are satisfied, and a:b:c=1:1:3 is standard, and the molar ratio may be deviated from the reference molar ratio within a range in which the perovskite structure is able to be achieved.
12. The mirror driving device according to claim 11, wherein: the perovskite type oxide (P-2) includes Nb, and the molar ratio Nb/(Zr+Ti+Nb) is 0.06 or more and 0.20 or less.
13. A mirror driving method in the mirror driving device according to claim 1, comprising: applying a first drive voltage to an electrode constituting at least one piezoelectric converter of the first piezoelectric converter or the third piezoelectric converter; and applying a second drive voltage, which is in phase with the first drive voltage, to an electrode constituting at least one piezoelectric converter of the second piezoelectric converter or the fourth piezoelectric converter, thereby causing the first actuator and the second actuator to bend in opposite directions.
14. The mirror driving method according to claim 13, wherein: some of the electrodes of the upper electrodes and the lower electrodes of each of the first piezoelectric converter, the second piezoelectric converter, the third piezoelectric converter, and the fourth piezoelectric converter are used as a detection electrode which detects a voltage generated by a piezoelectric effect accompanied with deformation of the piezoelectric body, and a detection signal is obtained from the detection electrodes during driving of the mirror.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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DESCRIPTION OF THE PREFERRED EMBODIMENTS
(18) Hereinafter, embodiments for embodying the present invention will be described in detail with reference to the accompanying drawings.
First Embodiment
(19)
(20) The upper surface of the mirror 12 is a reflecting surface 12C that reflects light. A metal thin film such as Au (gold) or Al (aluminum) is formed on the reflecting surface 12C in order to increase the reflectance of incident rays. Materials and film thicknesses used for mirror coating are not particularly limited, and various designs are possible using well-known mirror materials (high reflectance materials).
(21) The shape in the plan view of the mirror 12 that functions as the reflector and the shape of the reflecting surface 12C which is a mirror coated region may be coincident with each other or may be different from each other. The reflecting surface 12C can be formed within the area range of the upper surface of the mirror 12. Although the mirror 12 having the reflecting surface 12C that reflects light is described in this example, a form in which a reflecting surface 12C that reflects sound waves, electromagnetic waves, or the like is implemented is also possible.
(22) The mirror support 14 is connected to the mirror 12, and supports the mirror 12 so as to be rotatable about a rotation axis R.sub.A. The mirror support 14 is constituted by a first torsion bar 20 and a second torsion bar 22. The first torsion bar 20 and the second torsion bar 22 support the mirror 12 from both sides in the axial direction of the rotation axis R.sub.A with respect to the mirror 12. The first torsion bar 20 corresponds to a form of first mirror support part, and the second torsion bar 22 corresponds to a form of second mirror support part.
(23) The piezoelectric actuator 16 is connected to the mirror support 14, and generates a driving force to rotate the mirror 12 about the rotation axis R.sub.A.
(24) The fixing frame 18 is a member that supports the piezoelectric actuator 16. Since the mirror 12 is supported by the piezoelectric actuator 16 via the mirror support 14, the fixing frame 18 functions as a member that indirectly supports the mirror 12 via the piezoelectric actuator 16. In addition, in the fixing frame 18, wiring and electronic circuits (not illustrated) are provided.
(25) Hereinafter, for convenience of description, orthogonal xyz axes are introduced into
(26) The micromirror device 10 has a substantially line symmetrical structure (horizontally symmetrical in
(27) [Shape of Mirror Part]
(28) The mirror 12 of this example has a rectangular shape in a plan view. However, when the invention is implemented, the shape of the mirror 12 is not particularly limited. The shape is not limited to the rectangular shape illustrated in
(29) In addition, as an example of another functional shape that can be achieved by the mirror part, as described in JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, Vol. 21, 6 (2012), 1303-1310, there may be cases where a deformation prevention frame which suppresses dynamic deformation of the reflecting surface during scan driving. For example, as illustrated in
(30) [Structure of Piezoelectric Actuator Part]
(31) As illustrated in
(32) As illustrated on the left side of
(33) Each of first base end 36A and the second base end 36B which are base ends on both sides in the rotation axis direction (x-axis direction) in the first actuator 30 is fixed to the fixing frame 18. The first actuator 30 is supported by the fixing frame 18 in a both-end supported beam structure by a configuration in which each of the first base end 36A and the second base end 36B is fixed to the fixing frame 18. The term both-end supported beam structure is synonymous with doubly supported beam structure.
(34) The shape of the fixing frame 18 is not limited to the example of
(35) For example, instead of the fixing frame 18 illustrated in
(36) The first base end 36A illustrated on the left side of
(37) Similarly, the second base end 36B illustrated on the right side of
(38) The first actuator 30 is a piezoelectric actuator having a both end fixed type both-end supported beam structure in which each of the first base end 36A and the second base end 36B positioned on both sides in the x-axis direction is restrained by the fixing frame 18.
(39) Each of the first torsion bar 20 and the second torsion bar 22 is connected to the first actuator 30 in the vicinity of the fixed end of the first actuator 30, that is, in the vicinity of the first base end 36A and the second base end 36B, which are root portions where the first actuator 30 starts to displace.
(40) The same is applied to the second actuator 40, and as illustrated on the left side of
(41) A third connection point 42A is between the second actuator 40 and the third connector 42 and the fourth connection point 44A is between the second actuator 40 and the fourth connector 44.
(42) Each of the third base end 46A and the fourth base end 46B which are base ends on both sides in the rotation axis direction (x-axis direction) in the second actuator 40 is fixed to the fixing frame 18. That is, the second actuator 40 is supported by the fixing frame 18 in a both-end supported beam structure by a configuration in which each of the third base end 46A and the fourth base end 46B is fixed to the fixing frame 18.
(43) The third base end 46A illustrated on the left side of
(44) Similarly, the fourth base end 46B illustrated on the right side of
(45) The second actuator 40 is a piezoelectric actuator having a both end fixed type both-end supported beam structure in which both the third base end 46A and the fourth base end 46B on both sides in the x-axis direction are restrained by the fixing frame 18. Each of the first torsion bar 20 and the second torsion bar 22 is connected to the second actuator 40 in the vicinity of the fixed end of the second actuator 40, that is, in the vicinity of the third base end 46A and the fourth base end 46B, which are root portions where the second actuator 40 starts to displace.
(46) By causing the first actuator 30 and the second actuator 40 to bend in opposite directions, the first torsion bar 20 and the second torsion bar 22 are be moved in a direction in which they rotate about the rotation axis R.sub.A, such that the mirror 12 can be driven to be tilted. That is, by performing driving to bend the first actuator 30 and the second actuator 40 in opposite directions, the first torsion bar 20 and the second torsion bar 22 are induced to undergo tilt displacement, and the mirror 12 Is rotated about the rotation axis R.sub.A. That is, the reflecting surface 12C of the mirror 12 is tilted.
(47) <<Shape of Piezoelectric Actuator Part>>
(48) Each of the first actuator 30 and the second actuator 40 in this example has an actuator shape with a substantially semicircular arc shape in a plan view, and the two are combined to form the piezoelectric actuator 16 having a substantially annular shape. In
(49) <<Arrangement of Electrodes>>
(50) The first actuator 30 has, as the upper electrodes thereof, one first upper electrode 51 and two second upper electrodes 52A and 52B. That is, the upper electrodes of the first actuator 30 has an electrode arrangement structure in an electrode division form divided into the first upper electrode 51 and the second upper electrodes 52A and 52B with respect to the longitudinal direction of a beam along the shape of a movable piece 38 corresponding to a portion of the beam (beam) that connects the one first base end 36A and the-second base end 36B. The first upper electrode 51 and the second upper electrodes 52A and 52B are electrodes that are independent (that is, insulated and separated) from each other.
(51) When a length direction along the shape of the movable piece 38 from the first base end 36A to the second base end 36B in the first actuator 30 is referred to as the length direction of the first actuator 30, the first actuator 30 has a structure in which the second upper electrode 52A, the first upper electrode 51, and the second upper electrode 52B are sequentially arranged side by side along the length direction of the first actuator 30 from the left in
(52) The lower electrodes of the first actuator 30 are also divided into the same division form corresponding to the electrode division form of the upper electrodes. That is, the first actuator 30 has a first lower electrode 71 and second lower electrodes 72A and 72B as the lower electrodes which respectively oppose the first upper electrode 51 and the second upper electrodes 52A and 52B. The first actuator 30 has an electrode arrangement structure in which the second lower electrode 72A, the first lower electrode 71, and the second lower electrode 72B are sequentially arranged side by side along the length direction of the first actuator 30 from the left in
(53) A first piezoelectric converter 81 is formed by a laminated structure in which a piezoelectric body (see reference numeral 166 in
(54) Similarly, second piezoelectric converters 82A and 82B are formed by a laminated structure in which piezoelectric bodies are interposed between the second upper electrodes 52A and 52B and the second lower electrodes 72A and 72B, respectively. In the second piezoelectric converter 82A, a pair of the second upper electrode 52A and the second lower electrode 72A functions as an electrode pair, and in the second piezoelectric converter 82B, a pair of the second upper electrode 52B and the second lower electrode 72B functions as an electrode pair.
(55) The second actuator 40 also has the same structure as the first actuator 30. The second actuator 40 has, as the upper electrodes thereof, two third upper electrodes 63A and 63B and one fourth upper electrode 64. That is, the upper electrodes of the second actuator 40 has an electrode arrangement structure in an electrode division form divided into the third upper electrodes 63A and 63B and the fourth upper electrode 64 with respect to the longitudinal direction of a beam along the shape of a movable piece 48 corresponding to a portion of the beam (beam) that connects the third base end 46A and the fourth base end 46B.
(56) The third upper electrodes 63A and 63B and the fourth upper electrode 64 are electrodes which are independent (that is, insulated and separated) from each other. When a length direction along the shape of the movable piece 48 from the third base end 46A to the fourth base end 46B in the second actuator 40 is referred to as the length direction of the second actuator 40, the second actuator 40 has a structure in which the third upper electrode 63A, the fourth upper electrode 64, and the third upper electrode 63B are sequentially arranged side by side along the length direction of the second actuator 40 from the left in
(57) In addition, the lower electrodes of the second actuator 40 are also divided into the same division form corresponding to the electrode division form of the upper electrodes. That is, the second actuator 40 has third lower electrodes 93A and 93B and a fourth lower electrode 94 as the lower electrodes which respectively oppose the electrodes of the third upper electrodes 63A and 63B and the fourth upper electrode 64 with piezoelectric bodies interposed therebetween. The second actuator 40 has an electrode arrangement structure in which the third lower electrode 93A, the fourth lower electrode 94, and the third lower electrode 93B are sequentially arranged side by side along the length direction of the second actuator 40 from the left in
(58) Third piezoelectric converters 103A and 103B are formed by a laminated structure in which piezoelectric bodies are interposed between the third upper electrodes 63A and 63B and the third lower electrodes 93A and 93B. In the third piezoelectric converter 103A, a pair of the third upper electrode 63A and the third lower electrode 93A functions as an electrode pair, and in the third piezoelectric converter 103B, a pair of the third upper electrode 63B and the third lower electrode 93B function as an electrode pair.
(59) Similarly, a fourth piezoelectric converter 104 is formed by a laminated structure in which a piezoelectric body is interposed between the fourth upper electrode 64 and the fourth lower electrode 94. In the fourth piezoelectric converter 104, a pair of the fourth upper electrode 64 and the fourth lower electrode 94 functions as an electrode pair.
(60) For each of the upper electrodes and the lower electrodes of the piezoelectric actuator 16, regarding a plurality of the electrodes (51, 52A, 52B, 63A, 63B, 64, 71, 72A, 72B, 93A, 93B, 94) arranged to be divided from each other as described above, the electrodes to which the same drive voltage is applied or the electrodes set to be at the same potential (for example, a ground potential as a reference potential) may be connected to each other via an appropriate wiring.
(61) For example, the first upper electrode 51 and the third upper electrodes 63A and 63B forming a group may be connected to each other via a wiring (not illustrated), and the second lower electrodes 72A and 72B and the fourth lower electrode 94 forming a group may be connected to each other through a wiring (not illustrated).
(62) Furthermore, in the example of
(63) Although a schematic plan view is illustrated in
(64) Details of the arrangement of each of the electrode pairs of the first piezoelectric converter 81, the second piezoelectric converters 82A and 82B, the third piezoelectric converters 103A and 103B, and the fourth piezoelectric converter 104 in the piezoelectric actuator 16 will be described later.
Second Embodiment
(65)
(66) The micromirror device 110 illustrated in
(67) That is, the piezoelectric actuator 16 of the micromirror device 110 illustrated in
(68) In the example of
(69) The micromirror device 110 has a simple structure in which the connectors 32, 34, 42, and 44 described with reference to
(70) Furthermore, in the micromirror device 110 in
(71) In the device structure of the second embodiment illustrated in
(72) <Structure of Piezoelectric Actuator Part>
(73) In the following description, the structure of the second embodiment having a simple device shape will be described as an example. However, the same description is applied to the structure of the first embodiment.
(74)
(75) The lower electrode 164 includes the first lower electrode 71, the second lower electrodes 72A and 72B, the third lower electrodes 93A and 93B, and the fourth lower electrode 94. However, in
(76) A piezoelectric converter is formed by a laminated structure in which the piezoelectric body 166 is interposed between the lower electrode 164 and the upper electrode 168. The piezoelectric converter is a portion that functions as a piezoelectric element and can also be expressed as the term piezoelectric element part or piezoelectric active part. The piezoelectric converter can be used as a driver for displacing the actuator and can be used as a sensor Here, in order to simplify the description, a form in which the piezoelectric converter is used as a driver will be described. The term driver is synonymous with driving force generator.
(77) The first actuator 30 and the second actuator 40 function as piezoelectric unimorph actuators which undergo bending deformation in upward and downward directions in
(78) In this embodiment, as illustrated in
(79) Since a portion of the piezoelectric body 166 interposed between the upper and lower electrodes functions as a driving force generator or a stress detector (sensor), unnecessary piezoelectric portions (such as portions that do not have at least one of the upper and lower electrodes) that do not directly contribute to the operation of the piezoelectric converter (piezoelectric element) can be removed. By removing the unnecessary piezoelectric portions and separating the piezoelectric body in units of the piezoelectric converters, the stiffness of the actuator is lowered, and the actuator can be easily deformed.
(80) When the invention is implemented, separation of the piezoelectric layers corresponding to the arrangement of the divided electrodes (division by removal of the unnecessary portions) is not necessarily required. The piezoelectric layer may not be divided in units of the piezoelectric converters and may also be used as a single sheet of (single) piezoelectric film.
(81) In addition, the second embodiment, the example in which each electrode of the first upper electrode 51, the second upper electrodes 52A and 52B, the third upper electrodes 63A and 63B, the fourth upper electrode 64, the first lower electrode 71, the second lower electrodes 72A and 72B, the third lower electrodes 93A and 93B, and the fourth lower electrode 94 is formed by a single electrode is described. However, the electrodes (51, 52A, 52B, 63A, 63B, 64, 71, 72A, 72B, 93A, 93B, 94) are not limited to the embodiment in which each electrode is formed by a single electrode, and a single electrode may also be formed by a plurality of electrodes.
(82) The film thickness of the respective layers illustrated in
(83) <Description of Operation of Piezoelectric Actuator Part>
(84) Next, the operation of the piezoelectric actuator 16 will be described. Here, an example in which regarding the first piezoelectric converter 81 and the third piezoelectric converters 103A and 103B illustrated in
(85) In order to simplify the description, a voltage waveform V.sub.11 applied to the first upper electrode 51 and a voltage waveform V.sub.21 applied to the third upper electrodes 63A and 63B are set to be the same voltage waveform V.sub.1 (V.sub.11=V.sub.21=V.sub.1), and a voltage waveform V.sub.12 applied to the second lower electrodes 72A and 72B and a voltage waveform V.sub.22 applied to the fourth lower electrode 94 are set to be the same voltage waveform V.sub.2 (V.sub.12=V.sub.22=V.sub.2). Furthermore, the voltage waveform V.sub.1 and the voltage waveform V.sub.2 have in an in-phase relationship.
(86) Regarding the voltage waveform of the drive voltage, for example, the expressions of the voltage waveforms V.sub.1 and V.sub.2 are respectively expressed as follows.
V.sub.1=V.sub.off1+V.sub.1A sin ?t
V.sub.2=V.sub.off2+V.sub.2A sin ?t
(87) In the above expressions, V.sub.1A and V.sub.2A are the voltage amplitudes, ? is the angular frequency, and t is the time.
(88) The voltage amplitudes V.sub.1A and V.sub.2A can be arbitrary values of 0 or more, respectively. That is, the values are arbitrary values that satisfy V.sub.1A?0, and V.sub.2A?0. The offset voltages V.sub.off1 and V.sub.off2 are arbitrary. It is preferable to set the offset voltage such that, for example, V and V.sub.2 do not exceed the polarization reversal voltage of the piezoelectric body. The polarization reversal voltage is a voltage corresponding to the coercive electric field.
(89) By applying the voltage waveforms V.sub.1 and V.sub.2 which are in phase as described above, the first actuator 30 and the second actuator 40 undergo bending deformation due to the inverse piezoelectric effect of the piezoelectric body 166.
(90) The drive voltage of the voltage waveform V.sub.1 corresponds to a form of first drive voltage, and the drive voltage of the voltage waveform V.sub.2 corresponds to a form of second drive voltage.
(91) As the simplest example, it is possible to set V.sub.1=V.sub.2, and it is possible to cause the first actuator 30 and the second actuator 40 to bend in opposite directions by using the voltage waveform V.sub.1 of a single type of drive voltage.
(92) By causing the frequency of the voltage waveform to be coincident with a resonance frequency corresponding to a resonance mode in which the first torsion bar 20 and the second torsion bar 22 undergo tilt displacement, the mirror 12 undergoes significant tilt displacement, and thus a wide range can be scanned.
(93) <Relationship Between Stress Distribution During Driving in Resonance Mode Vibration and Arrangement of Electrodes>
(94)
(95) In
(96) In addition,
(97) In a case where the first actuator 30 and the second actuator 40 are in the bending deformation state illustrated in
(98) The compressive stress and the tensile stress mentioned here are defined by selecting two principal stresses in a plane substantially orthogonal to the film thickness direction of the piezoelectric body 166 from three orthogonal principal stress vectors and determining the direction with a higher absolute value (the direction with the maximum principal stress). In a case where the film thickness direction is set to the z axis, the two principal stresses in the plane substantially orthogonal to the film thickness direction are stresses generated in the x-y plane, and correspond to ?.sub.1 and ?.sub.2 in
(99) The reason for the above definition is that the dimensions of the actuator are generally planar in the piezoelectric MEMS device and the stress ?.sub.3 in the film thickness direction can be regarded as almost 0. The phrase the dimensions are planar means that the height is sufficiently smaller than the dimension in the plane direction. The term stresses in opposite directions is determined on the basis of the above definition. The plane direction of the x-y plane described above corresponds to the in-plane direction orthogonal to the film thickness direction of the piezoelectric body.
(100) In addition, in
(101) According to the stress distribution as illustrated in
(102) That is, the first piezoelectric converter 81 is provided for the tensile stress region 171 in
(103) The stress distribution during an operation due to resonance mode vibration (resonance driving) can be analyzed by using a mode analysis method with parameters such as device dimensions, the Young's modulus of a material, and device shapes, which are given by using a well-known finite element method software. When the device is designed, the stress distribution in the piezoelectric body at the time of driving in the resonance mode is analyzed, the regions of the piezoelectric converters are divided so as to correspond to the division of the compressive stress regions and the tensile stress regions in the stress distribution on the basis of the analysis result, and the arrangement of the first piezoelectric converter 81, the second piezoelectric converters 82A and 82B, the third piezoelectric converters 103A and 103B, and the fourth piezoelectric converter 104 is determined.
(104) In addition, from the viewpoint of groups of the piezoelectric converters corresponding to regions with common stress directions, the piezoelectric converters can be divided into two groups. The first piezoelectric converter 81 and the third piezoelectric converters 103A and 103B belong to a first group (first electrode group), the second piezoelectric converters 82A and 82B and the fourth piezoelectric converter 104 belong to a second group (second electrode group).
(105) In the arrangement of the electrodes divided as described above, any one electrode of the upper electrode and the lower electrode of the piezoelectric converters (piezoelectric converters belonging to the same group) corresponding to the region with the same stress direction are set to be at the ground potential, and the in-phase drive voltage is applied the other electrode In addition, the pressure converters (piezoelectric converter belonging to different groups) corresponding to the region of different stress directions (stresses in opposite directions) are configured so that the lower electrode of the piezoelectric converter belonging to one group is set to be at the ground potential and the voltage waveform V.sub.1 is applied to the upper electrode while the upper electrode of the piezoelectric converter belonging to the other group is set to be at the ground potential and the voltage waveform V.sub.2 in phase with V.sub.1 is applied to the lower electrode. Accordingly, in the most efficient manner, a piezoelectric force can be converted into tilt displacement.
(106) In the first actuator 30, as illustrated in
(107) Furthermore, in
(108) As another configuration, a form in which the first upper electrode 51 and the third upper electrodes 63A, 63B are set to be at the ground potential and the voltage waveform V.sub.1 of the drive voltage is applied to the first lower electrode 71 and the third lower electrodes 93A and 93B while the second lower electrodes 72A and 72B and the fourth lower electrode 94 are set to be at the ground potential and the voltage waveform V.sub.2 of the drive voltage is applied to the second upper electrodes 52A and 52B and the fourth upper electrode 64 is also possible. In this case, the electrodes having the same potential are connected by wirings.
(109) Furthermore, in addition to the embodiment in which all of the first piezoelectric converter 81, the second piezoelectric converters 82A and 82B, the third piezoelectric converters 103A and 103B, and the fourth piezoelectric converter 104 are used as driving force generators, an embodiment in which some piezoelectric converters thereof are used as sensors (stress detectors) for sensing (for detection) is also possible. Moreover, each of the electrodes constituting the electrode pair of each piezoelectric converter is not limited to an embodiment constituted by a single electrode, and at least one electrode among the electrodes (51, 52A, 52B, 63A, 63B, 64, 71, 72A, 72B, 93A, 93B, and 94) may also be constituted by a plurality of electrodes.
(110) <Use Form and Modification Example of Device>
(111) Hereinafter, an example of a mirror driving method of the micromirror device according to the embodiment of the present invention will be described.
(112) [Use Example 1]
(113)
(114) In this case, as illustrated in
(115) On the other hand, for the second piezoelectric converters 82A and 82B of the first actuator 30 and the fourth piezoelectric converter 104 of the second actuator 40, a lower electrode driving system which is driven by connecting each of the upper electrodes (52A, 52B, and 64) to the ground potential and applying the voltage waveform V.sub.2 in phase with V.sub.1 to the lower electrodes (72A, 72B, and 94) is employed.
(116) In this manner, by using all of the piezoelectric converters (81, 82A, 82B, 93A, 93B, and 94) as the driving force generators, a large displacement angle can be realized.
(117) It addition, the phrase in phase is not limited to a phase difference of 0? and includes an allowable range of a phase difference (for example, ?10?) that can be substantially treated as the same phase to a degree at which no problems are caused in practice.
(118) For the plurality of piezoelectric elements (piezoelectric converters) that function as the driving force generators, in order to adjust the operation performance between the elements, the voltage amplitude and the phase difference of the drive voltage applied to each piezoelectric element may be appropriately adjusted. A case of changing the voltage amplitude and the phase difference within the range of such adjustment is also included in the scope of the implementation of the present invention.
(119) [Use Example 2]
(120)
(121) In
(122) The detection electrode is set to be at a floating potential, and detects a voltage generated by the piezoelectric effect (positive piezoelectric effect) of the piezoelectric body 166. In
(123) As described above, when some electrodes among the plurality of electrodes are used as voltage detectors, a voltage generated by the positive piezoelectric effect of the piezoelectric body can be detected, and from the detected voltage signal (detection signal), the stress of the actuator can be detected. That is, the voltage detector functions as a stress detector. Accordingly, a feedback driving circuit that monitors the driven state of the mirror 12 during driving of the mirror 12 and enables the resonance state to be maintained or the like can be configured.
(124) As illustrated in
(125) [Use Example 3]
(126)
(127) Each of the first lower electrode 71 and the fourth upper electrode 64 is constituted by a single electrode. However, the first lower electrode 71 and the fourth upper electrode 64 may also be divided into a plurality of electrodes according to the arrangement of the electrodes 51A, 51B, and 51C of the first upper electrode 51 and the electrodes 94A, 94B, and 94C of the fourth lower electrode 94.
(128) Among the plurality of electrodes 51A to 51C constituting the first upper electrode 51, the electrode 51B disposed at the center is used as a voltage detector (electrode for sensing) at a floating potential, and the remaining (left and right) electrodes 51A and 51C are used as drive voltage application parts (that is, driving force generators).
(129) Similarly, among the plurality of electrodes 94A to 94C constituting the fourth lower electrode 94, the electrode 94B disposed at the center is used as a voltage detector (electrode for sensing) at a floating potential and the remaining (left and right) electrodes 94A and 94C are used as drive voltage application parts (that is, driving force generators). Accordingly, stress detection can be achieved while minimizing the electrode region occupied by the voltage detectors and maintaining a high scan angle.
(130) In
(131) <Production Method of Example 1>
(132) As Example 1, a micromirror device was fabricated by the following production method.
(133) [Procedure 1] On a silicon on insulator (SOI) substrate having a laminated structure of a handle layer of 350 micrometers [?m], a box layer of 1 micrometer [?m], and a device layer of 24 micrometers [?m], a Ti layer of 30 nanometers [nm] and an Ir layer of 150 nanometers [nm] were formed at a substrate temperature of 350? C. by a sputtering method. A conductive layer formed by the laminate of the Ti layer (30 nm) and the Ir layer (150 nm) corresponds to the lower electrode 164 described with reference to
(134) [Procedure 2] A piezoelectric body (PZT) layer was formed into 2.5 micrometers [?m] on the substrate in which the laminate of the lower electrode (Ti/Ir) was formed in Procedure 1, by sing a radio frequency (RF) sputtering device.
(135) A mixed gas of 97.5% Ar and 2.5% O.sub.2 was used as the film formation gas, and a target material having a composition of Pb.sub.1.3((Zr.sub.0.52 Ti.sub.0.48).sub.0.88Nb.sub.0.12)O.sub.3 was used. The film formation pressure was set to 2.2 millitorr [mTorr] (about 0.293 pascal [Pa]), and the film formation temperature was set to 450? C. The obtained PZT layer was an Nb-doped PZT thin film to which Nb was added in an atomic compositional ratio of 12%.
(136) The compositional ratio of Pb contained in the formed PZT thin film was measured by an X-ray fluorescence analysis (XRF) method, and the molar ratio Pb/(Zr+Ti+Nb) was 1.05. That is, the chemical formula at this time is a=1.05 with b=1 represented in Pb.sub.a(Zr.sub.x,Ti.sub.y,Nb.sub.b-x-y).sub.bO.sub.c.
(137) As described above, the ratio of the amount a of Pb contained in the PZT thin film having a perovskite structure that is actually obtained can take a value other than 1.00 due to the presence of interstitial atoms, defects, and the like. In addition, for the same reason, the ratio c of 0 atoms can also take a value other than 3.00.
(138) [Procedure 3] On the substrate on which the PZT layer is formed in procedure 2, an upper electrode having a laminated structure of Pt/Ti was patterned by a lift-off method, pattern etching of the PZT thin film was performed by ICP (inductively coupled plasma) dry etching.
(139) Regarding the patterning of the lower electrode, a desired pattern may be formed in the lower electrode forming process of Procedure 1, and a desired pattern may be formed by etching in Procedure 3.
(140) [Procedure 4] Thereafter, pattern etching of the device layer was performed by a silicon dry etching process, and the shapes of the actuator part, the mirror part, and the fixing frame were processed.
(141) [Procedure 5] Next, the handle layer was subjected to deep reactive-ion etching (Deep RIE) from the rear surface of the substrate.
(142) [Procedure 6] Last, the box layer was removed from the rear surface by dry etching, whereby a micromirror device having the configuration as illustrated in
(143) In this example, the PZT thin film was directly formed on the substrate by the sputtering method, and the dry etching was thereafter performed. As described above, by thinning the piezoelectric body, the fabrication process can be simplified and fine patterning can be achieved. Accordingly, the yield can be significantly improved, a further reduction in the size of the device can be coped with.
(144) However, when the present invention is implemented, the piezoelectric body of the actuator is not limited to the thin film piezoelectric body, and a unimorph actuator may also be formed by attaching a bulk piezoelectric body to a vibration plate.
(145) <Examples of Dimensions of Example 1>
(146) As an example of the shape of the device according to Example 1, specific examples of dimensions of Example 1 are illustrated in
(147) The dimension a is the length in the x-axis direction of the base ends (146A and 146B). The dimension b is the width dimension in the x-axis direction of the beam (beam) portions in the actuator parts (30 and 40). The dimension c is the length in the x-axis direction of the torsion bar parts (20 and 22). The dimension d is the width dimension in the x-axis direction of the mirror 12. The dimension e is the length of the mirror 12 in the y-axis direction. The dimension f is the width dimension in the y-axis direction of the torsion bar parts (20 and 22). The dimension g is the width dimension in the y-axis direction of the base ends (146A and 146B).
(148) <Comparative Example 1>
(149) A micromirror device according to Comparative Example 1 as illustrated in
(150) In the device 210 illustrated in
(151)
V.sub.3=V.sub.off3V.sub.3A sin(?t+?)
(152) In the above expression, V.sub.off3 is the offset voltage, V.sub.3A is the voltage amplitude, ? is the phase difference, and ?=180? is given herein.
(153) V.sub.3A may be any value equal to or greater than 0, but may also be the same value (V.sub.3A=V.sub.2A=V.sub.1A) as the voltage waveforms V.sub.1 and V.sub.2 described above. The offset voltage V.sub.off3 is arbitrary, and is preferably set such that, for example, V.sub.3 does not exceed the polarization reversal voltage of the piezoelectric body. In a device evaluation experiment, which will be described later, the offset voltage V.sub.off3 for the voltage waveform V.sub.3 and the offset voltages V.sub.off1 and V.sub.off2 for the voltage waveforms V.sub.1 and V.sub.2 are the same voltage value V.sub.off (=V.sub.off1=V.sub.off2=V.sub.off3).
(154) As described above, in the form of
(155) In a case of where stress detection is performed in the device form illustrated in
(156) <Evaluation Experiment on Operation of Device>
(157) An experiment was conducted to compare the operation performance of the device fabricated in Example 1 and the device fabricated in Comparative Example 1.
(158) As experiment subjects, four types of devices, Example 1 (driving only), Example 1 (with angle sensing), Comparative Example 1 (driving only), and Comparative Example 1 (with angle sensing) evaluated. Example 1 (driving only), Example 1 (with angle sensing), Comparative Example 1 (driving only), and Comparative Example 1 (with angle sensing) respectively correspond to forms of
(159) Furthermore, the dimensions of the device are all exemplified in
(160) The voltage waveforms V.sub.1 and V.sub.2 in a sine wave having a voltage amplitude V.sub.PP are input to the electrodes for driving in each device to induce resonance vibration accompanied with the rotational motion of the mirror 12, and the mechanical deflection angle of the mirror 12 was measured at a laser scan angle. Regarding a method of applying the drive voltage, the devices of Example 1 and Example 1 (with angle sensing) conform to the illustration of
(161) The results of the experiment are shown in
(162) As is apparent from
(163) <Piezoelectric Material>
(164) A piezoelectric body suitable for this embodiment may be a body including one or two or more perovskite type oxides represented by the following general formula (P-1).
General formula ABO.sub.3(P-1)
(165) In the formula, A is an element in A-site and is at least one element including Pb.
(166) B is an element in B-site and is at least one element selected from the group consisting of Ti, Zr, V, Nb, Ta, Sb, Cr, Mo, W, Mn, Sc, Co, Cu, In, Sn, Ga, Zn, Cd, Fe, Mg, Si, and Ni.
(167) O is an oxygen element.
(168) The molar ratio between the A-site element, the B-site element, and the oxygen element is 1:1:3 as a standard, and the molar ratio may also be deviated from the reference molar ratio within a range in which the perovskite structure can be achieved.
(169) The perovskite type oxides represented by the above general formula (P-1) include: lead-containing compounds such as lead titanate, lead zirconate titanate (PZT), lead zirconate, lanthanum lead titanate, lead lanthanum zirconate titanate, lead magnesium niobate-lead zirconate titanate, lead nickel niobate-lead zirconate titanate, and lead zinc niobate-lead zirconate titanate and mixed crystal systems thereof; and lead-free compounds such as barium titanate, strontium barium titanate, sodium bismuth titanate, bismuth potassium titanate, sodium niobate, potassium niobate, lithium niobate, and bismuth ferrite and mixed crystal systems thereof.
(170) In addition, the piezoelectric film of this embodiment preferably includes one or two or more perovskite type oxides (P-2) represented by the following general formula (P-2).
General formula A.sub.a(Zr.sub.x,Ti.sub.y,M.sub.b-xy).sub.bO.sub.c(P-2)
(171) In the formula, A is an element in A-site and is at least one element including Pb.
(172) M is at least one element selected from the group consisting of V, Nb, Ta, and Sb.
(173) 0<x<b, 0<y<b, and 0?b-x-y are satisfied.
(174) a:b:c=1:1:3 is standard, and the molar ratio may be deviated from the reference molar ratio within a range in which the perovskite structure can be achieved.
(175) The perovskite type oxide (P-2) is an oxide in which a part of the B-site of intrinsic PZT or PZT is substituted with M. It is known that in the PZT to which various donor ions having a valence higher than the valence of the substituted ion are added, characteristics such as piezoelectric performance are improved compared to the intrinsic PZT. It is preferable that M is one or two or more donor ions having a valence higher than that of tetravalent Zr or Ti. As such donor ions, there are V.sup.5+, Nb.sup.5+, Ta.sup.5+, Sb.sup.5+, Mo.sup.6+, and W.sup.6+.
(176) The range of b-x-y is not particularly limited as long as the perovskite structure can be achieved. For example, in a case where M is Nb, the molar ratio Nb/(Zr+Ti+Nb) is preferably 0.05 or more and 0.25 or less, and more preferably 0.06 or more and 0.20 or less.
(177) Since a piezoelectric film made of the perovskite type oxides represented by the above general formulas (P-1) and (P-2) has a high piezoelectric strain constant (d31 constant), a piezoelectric actuator comprising the piezoelectric film has excellent displacement characteristics.
(178) Furthermore, the piezoelectric actuator comprising the piezoelectric film made of the perovskite type oxides represented by the general formulas (P-1) and (P-2) has voltage-displacement characteristics with excellent linearity. These piezoelectric materials exhibit good actuator characteristics and sensor characteristics when the present invention is implemented. In addition, the perovskite type oxide represented by the general formula (P-2) has a higher piezoelectric constant than that represented by the general formula (P-1).
(179) As a specific example of the piezoelectric body in this embodiment, for example, a lead zirconate titanate (PZT) thin film doped with Nb in an atomic composition percentage of 12% may be used. By forming a film of PZT doped with 12% Nb by a sputtering method or the like, a thin film having piezoelectric characteristics as high as a piezoelectric constant of d31=250 ?m/V can be stably fabricated.
(180) In addition, in this example, PZT is selected as the piezoelectric material used for the actuator (the driving force generator and the stress detector), but the piezoelectric material does not need to be limited to this material. For example, a lead-free piezoelectric body such as BaTiO.sub.3, KNaNbO.sub.3, or BiFeO.sub.3 may be used, and a non-perovskite piezoelectric body such as AlN and ZnO.sub.2 may also be used.
(181) <Film Formation Method>
(182) A vapor deposition method is preferable as the film formation method of the piezoelectric body. For example, in addition to the sputtering method, various methods such as an ion plating method, a metal organic chemical vapor deposition (MOCVD) method, and a pulse laser deposition (PLD) method may be applied. It is also conceivable to use a method other than the vapor deposition method (for example, sol-gel method). A configuration in which a piezoelectric thin film is directly formed on a substrate by a vapor deposition method or a sol-gel method is preferable. In particular, the piezoelectric body 166 of this embodiment is preferably a thin film having a film thickness of 1 ?m or more and 10 ?m or less.
(183) <Waveforms of Drive Voltages>
(184) In Example 1 described above, voltage waveforms which are in phase are used as the waveforms of the drive voltages. Although the voltage waveforms V.sub.1 and V.sub.2 are set to be in phase (phase difference ?=0?), the phases of the two do not need to be completely coincident with each other, and the phase difference therebetween may be shifted to some extent from 0?. For example, in a case where a component (noise vibration) other than the intended resonance vibration occurs, there may be cases where the phase difference between V.sub.1 and V.sub.2 is shifted from 0? by a small amount from in order to eliminate this component. For example, when the phase difference is within a range of ?10 degrees, the waveforms can be regarded as being in phase.
(185) In addition, the voltage amplitudes V.sub.1A and V.sub.2A of the voltage waveforms may be different from each other or may be any value including 0 V. Furthermore, the application voltage is not limited to a sine wave, and periodic waveforms such as a square wave and a triangular wave may also be applied thereto.
(186) Moreover, as described above, when V.sub.1=V.sub.2 is satisfied, only one type of drive waveform can be used for the device, and a simple driving circuit can be formed.
(187) When the present invention is implemented, the types of the drive waveforms may be two or more types. For example, as illustrated in
(188) As these four types of drive voltages, for example, the following waveforms may be used.
V.sub.11=V.sub.off11+V.sub.11A sin ?t
V.sub.12=V.sub.off12+V.sub.12A sin ?t
V.sub.21=V.sub.off21+V.sub.21A sin ?t
V.sub.22=V.sub.off22+V.sub.22A sin ?t
(189) In the expressions, each of V.sub.11A, V.sub.12A, V.sub.21A, and V.sub.22A is the voltage amplitude, ? is the angular frequency, and t is the time.
(190) Each of V.sub.11A, V.sub.12A, V.sub.21A, and V.sub.22A may have an arbitrary value of 0 or more. All of V.sub.11A, V.sub.12A, V.sub.21A, and V.sub.22A may be set to different values, or some or all thereof may also be set to the same value. In addition, in the above expressions, the phases of V.sub.11 and V.sub.21 are coincident with each other, and the phases of V.sub.12 and V.sub.22 are coincident with each other. However, these phases do not need to be completely coincident with each other, and a slight phase shift of about ?10? is acceptable.
(191) <Drive Voltage Supplying Means (Driving Control)>
(192)
(193) The voltage waveform V.sub.2 for driving is supplied from the driving circuit 310 to the second lower electrodes 72A and 72B of the first actuator 30 and the electrodes 94A and 94C of the second actuator 40. In addition, in
(194) The driving circuit 310 supplies the voltage waveforms V.sub.1 and V.sub.2 of the drive voltage for causing the mirror 12 to undergo resonance driving at near the resonance frequency fx of the resonance mode in which the mirror 12 (see
(195) Each of the electrode 51B of the first actuator 30 and the electrode 94B of the second actuator 40, which are used for sensing, is connected to a detection circuit 312.
(196) The first lower electrode 71 and the second upper electrodes 52A and 52B in the first actuator 30 and the third lower electrodes 93A and 93B and the fourth upper electrode 64 in the second actuator 40 are connected to the common terminal (V.sub.0 terminal, for example, GND terminal) of the driving circuit 310 or the detection circuit 312. Each electrode is connected to the driving circuit 310 or the detection circuit 312 via a wiring member such as wire bonding or a pattern wiring on a substrate (not illustrated).
(197) A voltage signal is detected from the electrode 51B and the electrode 94B for sensing via the detection circuit 312, and the detection results are notified to a control circuit 314. On the basis of the signal obtained from the detection circuit 312, the control circuit 314 sends a control signal to the driving circuit 310 so as to maintain resonance and controls the application of the drive voltages to the first actuator 30 and the second actuator 40.
(198) For example, feedback is applied to the driving circuit 310 so as to maintain resonance so that the phases of the waveform of the drive voltage applied to the piezoelectric actuator parts and the waveform detected from the stress detector (sensor) have predetermined values. The control circuit 314 controls the voltage or driving frequency applied to the piezoelectric actuator based on the detection signal obtained from the stress detector of the mirror 12.
(199) Such a feedback control circuit may be embedded in the detection circuit 312. In addition, the driving circuit 310, the detection circuit 312, and the control circuit 314 may be collectively configured as an integrated circuit such as an application specific integrated circuit (ASIC).
(200) <Operational Effects of Embodiment>
(201) According to the above-described embodiment, since the electrodes are arranged according to the stress distribution generated in the piezoelectric bodies at the time of deformation of the actuator parts, the actuator parts can be efficiently driven, and compared to the configuration in the related art, a larger mirror tilt angle can be obtained.
(202) Furthermore, according to the embodiment of the present invention, since the displacement efficiency is improved compared to the configuration in the related art, even in a case where some of the electrodes are used for stress detection, a sufficient displacement angle can be obtained. Moreover, according to this embodiment, since driving can be performed by using voltage waveforms which are in phase, the configuration of the driving circuit can be simplified. In particular, as the simplest configuration, a configuration in which the first actuator 30 and the second actuator 40 are displaced in opposite directions by one type of voltage waveform.
(203) <Another Example of Form of Piezoelectric Actuator Part>
(204)
(205) In the first actuator 30 of the micromirror device 410 illustrated in
(206) The first actuator 30 and the second actuator 40 having the actuator shape as illustrated in
(207) As the actuator shapes of the first actuator 30 and the second actuator 40, various forms are possible. As illustrated in
(208) <Modification Example of Mirror Support Part>
(209) In the above-described embodiment, the first torsion bar 20 and the second torsion bar 22 are connected to positions coincident with the rotation axis R.sub.A of the mirror 12, and are formed to extend in the axial direction of the rotation axis R.sub.A toward the outside of the mirror 12. In addition,
(210) For example, in a case where the substantially center portion in the longitudinal direction of the mirror 12 (not limited to the true center point on design but the vicinity thereof) is the rotation axis R.sub.A, in addition to an embodiment in which a torsion bar is connected to a single point at the position substantially coincident with the rotation axis R.sub.A, a structure in which torsion bars are connected at positions of two or more points in axial symmetry with respect to the position of the rotation axis R.sub.A interposed therebetween within a range in which the position can be regarded as the substantially center portion, is also possible.
(211) <Application Example>
(212) The mirror driving device of the present invention can be used in various applications as an optical device that reflects light such as laser light and changes the traveling direction of light. For example, the mirror driving device can be widely applied to an optical deflector, an optical scanning device, a laser printer, a barcode reader, a display device, various optical sensors (distance measuring sensors and shape measurement sensors), an optical communication device, a laser projector, an optical coherence tomography diagnostic device, and the like. Furthermore, the present invention is not limited to the applications in which light is reflected, and can also be applied to a mirror device in applications in which sound waves are reflected.
(213) In addition, the present invention is not limited to the above-described embodiments, and many modifications are possible by those with ordinary skill in the art within technical scope of the present invention.
EXPLANATION OF REFERENCES
(214) 10: micromirror device 12: mirror part 12C: reflecting surface 13: deformation prevention frame 14: mirror support part 15: mirror part 16: Piezoelectric actuator part 18: fixing frame 20: first torsion bar part 22: second torsion bar part 30: first actuator part 32, 34: connectors 32A, 34A: connection points 36A: first base end 36B: second base end 38: movable piece 40: second actuator part 42, 44: connectors 42A, 44A: connection points 46A: third base end 46B: fourth base end 48: movable piece 51: first upper electrode part 52A, 52B: second upper electrode part 63A, 63B: third upper electrode part 64: fourth upper electrode part 71: first lower electrode part 72A, 72B: second lower electrode part 81: first piezoelectric converter 82A, 82B: second piezoelectric converter 93A, 93B: third lower electrode part 94: fourth lower electrode part 103A, 103B: third piezoelectric converter 104: fourth piezoelectric converter 110: Micromirror device 132, 134: connection portion 142: connection point 144: connection point 160: vibration plate 164: lower electrode 166: piezoelectric body 168: upper electrode 310: driving circuit 312: detection circuit 314: control circuit 410: Micromirror device