METHOD AND DEVICE FOR PLATING A RECESS IN A SUBSTRATE
20190228975 ยท 2019-07-25
Assignee
Inventors
- Franz MARKUT (St. Georgen, AT)
- Thomas WIRNSBERGER (Seeboden, AT)
- Oliver KNOLL (Salzburg, AT)
- Andreas GLEISSNER (DOBRIACH, AT)
- Harald OKORN-SCHMIDT (Klagenfurt, AT)
- Philipp ENGESSER (Villach, AT)
Cpc classification
B05C3/02
PERFORMING OPERATIONS; TRANSPORTING
C25D5/34
CHEMISTRY; METALLURGY
H01L21/76877
ELECTRICITY
C25D5/003
CHEMISTRY; METALLURGY
C25D21/04
CHEMISTRY; METALLURGY
C25D17/001
CHEMISTRY; METALLURGY
B05C9/14
PERFORMING OPERATIONS; TRANSPORTING
C25D7/123
CHEMISTRY; METALLURGY
H01L21/2885
ELECTRICITY
B05C3/005
PERFORMING OPERATIONS; TRANSPORTING
International classification
Abstract
The invention relates to a method for plating a recess in a substrate, a device for plating a recess in a substrate and a system for plating a recess in a substrate comprising the device. The method for plating a recess in a substrate comprises the following steps: a) Providing a substrate with a substrate surface comprising at least one recess, b) applying a replacement gas to the recess to replace an amount of ambient gas in the recess to at least partially clear the recess from the ambient gas, c) applying a processing fluid to the recess, wherein the replacement gas dissolves in the processing fluid to at least partially clear the recess from the replacement gas, and d) plating the recess.
Claims
1. A method for plating a recess in a substrate (10), comprising the following steps: providing a substrate (10) with a substrate surface (11) comprising at least one recess, applying a replacement gas (30) to the recess to replace an amount of ambient gas (20) in the recess to at least partially clear the recess from the ambient gas (20), applying a processing fluid (40) to the recess, wherein the replacement gas (30) dissolves in the processing fluid (40) to at least partially clear the recess from the replacement gas (30), and plating the recess.
2. Method according to claim 1, wherein the replacement gas (30) and the processing fluid (40) essentially remove any gaseous barrier in the recess before plating the recess.
3. Method according to one of the preceding claims, wherein the replacement gas (30) has at a processing temperature a higher solubility in the processing fluid (40) than the ambient gas (20).
4. Method according to one of the preceding claims, wherein the ambient gas is air and the Henry's law solubility constant H.sup.cp of the replacement gas (30) in the processing fluid (40) at room temperature is larger than 6.410.sup.6 mol m.sup.3 Pa.sup.1, preferably equal to or larger than 1.210.sup.5 mol m.sup.3 Pa.sup.1 and more preferably equal to or larger than 3.310.sup.4 mol m.sup.3 Pa.sup.1
5. Method according to one of the preceding claims, wherein the replacement gas (30) comprises CO.sub.2 and the processing fluid (40) is essentially water.
6. Method according to one of the preceding claims, wherein the plating is an at least partial filling of the recess with an alloy or a metal and in particular with copper, nickel, indium or cobalt.
7. Method according to one of the preceding claims, wherein the processing fluid (40) is a plating fluid (40a) and the substrate (10) is immersed in the plating fluid (40a).
8. Method according to the preceding claim, wherein the plating fluid (40a) is an electrolyte of an electrochemical deposition system.
9. Method according to one of the preceding claims, wherein the replacement gas (30) comprises SO.sub.2 and the processing fluid (40) comprises H.sub.2SO.sub.4.
10. Method according to one of the claims 1 to 6, wherein the processing fluid (40) is a rinsing fluid (40b) and the recess is rinsed by the rinsing fluid (40b).
11. Method according to one of the preceding claims, wherein the replacement gas (30) dissolved in the processing fluid (40) forms a chemically reactive modification fluid, which modifies a surface of the recess.
12. Method according to the preceding claim, wherein the chemically reactive modification fluid is an acid or a base for cleaning or etching the surface of the recess.
13. Method according to one of the preceding claims, wherein the replacement gas (30) comprises NH.sub.3, SO.sub.2, NO.sub.2, HCl and/or HF and the processing fluid (40) is essentially water or a solvent.
14. Method according to one of the preceding claims, besides claims 3 and 4, wherein the replacement gas (30) has a lower solubility in the processing fluid (40) than the ambient gas (20) and the replacement gas (30) and/or the processing fluid (40) comprises an initiating agent to initiate a chemical reaction between the replacement gas (30) and the processing fluid (40).
15. Method according to the preceding claim, wherein the chemical reaction between the replacement gas (30) and the processing fluid (40) consumes the replacement gas (30).
16. Method according to one of the preceding claims, wherein the ambient gas (20) is air.
17. Method according to one of the preceding claims, wherein the substrate surface (11) comprises a plurality of recesses.
18. A device (50) for plating a recess in a substrate (10), comprising: a replacement gas unit (51) configured to apply a replacement gas (30) to a recess in a substrate (10) to replace an amount of ambient gas (20) in the recess to at least partially clear the recess from the ambient gas (20), a processing fluid unit (52) configured to apply a processing fluid (40) to the recess, wherein the replacement gas (30) dissolves in the processing fluid (40) to at least partially clear the recess from the replacement gas (30), and a plating unit (59) configured to plate the recess in the substrate (10).
19. Device (50) according to the preceding claim, wherein the processing fluid unit (52) comprises the plating unit (59) and the processing fluid (40) comprises a plating fluid (40a) configured to plate the recess in the substrate (10).
20. Device (50) according to claim 18, wherein the processing fluid unit (52) comprises a rinsing unit (60) and the processing fluid (40) comprises a rinsing fluid (40b) configured to rinse the recess.
21. Device (50) according to one of the claims 18 to 20, wherein the replacement gas unit (51) and/or the rinsing unit (60) are arranged in contact with the plating fluid (40a).
22. Device (50) according to one of the claims 18 to 21, wherein the replacement gas unit (51) and/or the rinsing unit (60) are floating in the plating fluid (40a).
23. Device (50) according to one of the claims 18 to 20, wherein the replacement gas unit (51) and/or the rinsing unit (60) are arranged at a distance to the plating fluid (40a).
24. Device (50) according to one of the claims 18 to 23, wherein the replacement gas unit (51) comprises at least one gas nozzle (53) configured to generate a replacement gas cushion or replacement gas curtain to be passed by the recess of the substrate (10).
25. Device (50) according to one of the claims 18 to 24, wherein the replacement gas unit (51) further comprises a drain (54) and/or an exhaust (55).
26. Device (50) according to one of the claims 18 to 25, further comprising a control unit (56) configured to close the plating unit (59) and/or to fill the plating unit (59) with the replacement gas (30) and/or the plating fluid (40a).
27. Device (50) according to one of the claims 18 to 26, wherein the replacement gas unit (51) is an arm-shaped member (57), and wherein the arm-shaped member (57) and the substrate (10) are rotatable relative to each other.
28. Device (50) according to the preceding claim, wherein the arm-shaped member (57) is configured to apply the replacement gas (30), the rinsing fluid (40b), an initiating agent and/or a chemically active substance to the recess and/or the substrate (10).
29. Device (50) according to one of the claims 18 to 28, wherein the replacement gas unit (51) is integrated into a substrate holder (12) configured to hold the substrate (10).
30. Device (50) according to one of the claims 18 to 29, further comprising a temperature unit configured to change a temperature of the processing fluid (40).
31. A system (70) for plating a recess in a substrate (10) comprising the device (50) for plating a recess in a substrate (10) according to one of the preceding claims and a device control (71), wherein the device control (71) is configured to control a gas replacement in a recess of a substrate (10), an application of a processing fluid (40) to the recess and/or a plating of the recess.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0053] Exemplary embodiments of the invention will be described in the following with reference to the accompanying drawings:
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[0055]
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DETAILED DESCRIPTION OF EMBODIMENTS
[0061] According to the present invention, a method for plating a recess in a substrate 10 is presented.
[0066]
[0067] The device 50 for plating a recess comprises a replacement gas unit 51, a processing fluid unit 52 and a plating unit 59. The replacement gas unit 51 applies the replacement gas 30 to one or more recesses in the substrate 10 to replace the ambient gas 20 in the recesses. The replacement gas 30 may be continuously circulated. The processing fluid unit 52 applies the processing fluid 40 to the recesses, wherein the replacement gas 30 dissolves in the processing fluid 40 to clear the recesses from the replacement gas 30. The plating unit 59 then plates the recesses in the substrate 10.
[0068] The method, system 70 and device 50 for plating a recess in a substrate 10 according to the present invention may essentially replace the ambient gas 20 in the recesses of the substrate 10 by the replacement gas 30. As a result, essentially no gaseous barrier prevents a continuous and essentially complete plating or filling of the recesses. Thereby, the method, system 70 and device 50 for plating a recess in a substrate 10 according to the present invention works at atmospheric pressure and without any application of sub-atmospheric pressure or vacuum with associated needs for expensive and complex equipment parts, which makes the method less complex, time and cost intensive when compared to the conventional methods. In addition, a premium quality method, system 70 and device 50 are provided, which enable the manufacturing of premium quality products with superior electrical and/or mechanical properties, reliability and life span.
[0069] As stated above, the device 50 for plating a recess comprises the replacement gas unit 51, which applies the replacement gas 30 to the recesses in the substrate 10 to replace the ambient gas 20. As shown in
[0070] As also stated above, the device 50 for plating a recess comprises the processing fluid unit 52, which applies the processing fluid 40 to the recesses, so that the replacement gas 30 dissolves in the processing fluid 40 and clears the recesses from the replacement gas 30. There are at least two options:
[0071] First and as shown in
[0072] Second and as shown in
[0073] In
[0074] As discussed above and shown in
[0075] While
[0076] As shown in
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[0078] It has to be noted that embodiments of the invention are described with reference to different subject matters. In particular, some embodiments are described with reference to method type claims whereas other embodiments are described with reference to the device type claims. However, a person skilled in the art will gather from the above and the following description that, unless otherwise notified, in addition to any combination of features belonging to one type of subject matter also any combination between features relating to different subject matters is considered to be disclosed with this application. However, all features can be combined providing synergetic effects that are more than the simple summation of the features.
[0079] While the invention has been illustrated and described in detail in the drawings and foregoing description, such illustration and description are to be considered illustrative or exemplary and not restrictive. The invention is not limited to the disclosed embodiments. Other variations to the disclosed embodiments can be understood and effected by those skilled in the art in practicing a claimed invention, from a study of the drawings, the disclosure, and the dependent claims.
[0080] In the claims, the word comprising does not exclude other elements or steps, and the indefinite article a or an does not exclude a plurality. A single unit may fulfil the functions of several items re-cited in the claims. The mere fact that certain measures are re-cited in mutually different dependent claims does not indicate that a combination of these measures cannot be used to advantage. Any reference signs in the claims should not be construed as limiting the scope.