Method for producing a metal-ceramic substrate

Abstract

The invention relates to a method for producing a metal-ceramic substrate including first and second metallizations and at least one ceramic layer incorporated between the first and second metallizations. Advantageously, first and second metal layers and the at least one ceramic layer are stacked superposed, and in such a way that the free edge sections, of the first and second metal layers respectively, project beyond the edges of the at least one ceramic layer and the first and second metal layers are deformed toward each other in the region of the projecting free edge sections and directly connected to each other in order to form a gas-tight, sealed metal container enclosing a container interior for receiving the at least one ceramic layer. Subsequently, the metal layers forming the metal container with the at least one ceramic layer received in the container interior are hot isostatically pressed together in a treatment chamber at a gas pressure between 500 and 2000 bar and at a process temperature between 300 C. and the melting temperature of the metal layers for producing a preferably flat connection of at least one of the metal layers and the at least one ceramic layer, and at least the projecting free edge sections, which are connected to each other, of the metal layers for forming the first and second metallization are subsequently removed.

Claims

1. A method for producing a metal-ceramic substrate, the method comprising: deforming a region of projecting free edge sections of a metal-ceramic stack, wherein the metal-ceramic stack comprises first and second metal layers and at least one ceramic layer accommodated between the first and second metal layers, wherein first and second metal layers and the at least one ceramic layer are stacked superposed in such a way that free edge sections of the first and second metal layers respectively project beyond the edges of the at least one ceramic layer forming projecting free edge sections; wherein the deforming comprises applying a clamping force to deform the projecting free edge sections before their direct connection and deforming the projecting free edge sections such that the projecting free edge sections are directly connected to each other in order to form a gas tight, sealed metal container enclosing a container interior for accommodating the at least one ceramic layer; hot isostatically pressing together the first and second metal layers in a treatment chamber at a gas pressure between 500 and 2000 bar and at a process temperature between 300 C. and a melting temperature of the first and second metal layers in order to produce a direct connection of the first and second metal layers and the at least one ceramic layer; and removing at least the projecting free edge sections of the first and second metal layers which are connected to each other via the direct connection to form the metal-ceramic substrate.

2. The method according to claim 1, wherein the projecting free edge sections of the first and second metal layers are connected together at edges of the first and second metal layers by welding, contact welding, laser welding, soldering, or by hard soldering, or the direct connection of the first and second metal layers at the edges of the first and second metal layers is produced by a mechanical-connection, by rolling, pressing and/or flanging of the free edge sections.

3. The method according to claim 1, wherein a volume in between the first and second metal layers and the at least one ceramic layer is evacuated before the direct connection of the edges of the first and second metal layers is produced.

4. The method according to claim 3, wherein oxygen is introduced into the evacuated volume before the direct connection of the edges of the first and second metal layers.

5. The method according to claim 3, wherein the first and second metal layers are connected directly to one another at the edges of the first and second metal layers in a vacuum or in an inert gas atmosphere, using nitrogen or argon as the inert gas.

6. A method for producing a metal-ceramic substrate, the method comprising: deforming a region of projecting free edge sections of a metal-ceramic stack, wherein the metal-ceramic stack comprises first and second metal layers and at least one ceramic layer accommodated between the first and second metal layers, wherein first and second metal layers and the at least one ceramic layer are stacked superposed in such a way that free edge sections of the first and second metal layers respectively project beyond the edges of the at least one ceramic layer forming projecting free edge sections; wherein the deforming comprises deforming the projecting free edge sections such that the projecting free edge sections are directly connected to each other in order to form a gas tight, sealed metal container enclosing a container interior for accommodating the at least one ceramic layer; wherein a porous material is present in the container interior in addition to the at least one ceramic layer, wherein the porous material absorbs a residual gas present in the container interior; hot isostatically pressing together the first and second metal layers in a treatment chamber at a gas pressure between 500 and 2000 bar and at a process temperature between 300 C. and a melting temperature of the first and second metal layers in order to produce a direct connection of the first and second metal layers and the at least one ceramic layer; and removing at least the projecting free edge sections of the first and second metal layers which are connected to each other via the direct connection to form the metal-ceramic substrate.

7. The method according to claim 6, wherein the porous material is evacuated and coated with a gas-tight sealing layer before the deforming.

8. The method according to claim 6, wherein the porous material is charged with oxygen and coated with a gas-tight sealing layer before the deforming.

9. The method according claim 1, wherein the at least one ceramic layer in the metal-ceramic stack is completely coated at its upper and/or lower side with a hard solder layer or an active solder layer.

10. The method according to claim 1, wherein the first and/or second metal layers are produced from copper or a copper alloy and/or an aluminium or an aluminium alloy.

11. The method according to claim 1, wherein the at least one ceramic layer is produced from an oxide, a nitride or carbide ceramic, aluminium oxide (Al.sub.2O.sub.3), an aluminium nitride (AlN), a silicon nitride (Si.sub.3N.sub.4), a silicon carbide (SiC) or an aluminium oxide with zirconium oxide (Al.sub.2O.sub.3+ZrO.sub.2).

12. A metal ceramic substrate produced according to a method according to claim 1.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) The invention is explained in greater detail below with the aid of the figures using examples of embodiment. In the figures:

(2) FIG. 1 shows a simplified schematic cross-sectional representation through a metal-ceramic substrate,

(3) FIG. 2 shows a simplified cross-sectional representation through a stack comprising first and second metal layers and a ceramic layer accommodated in between,

(4) FIG. 3 shows a schematic cross-sectional representation through a metal container formed from the stack according to FIG. 2 with a ceramic layer accommodated in the container interior,

(5) FIG. 4 shows a schematic plan view of the metal container according to FIG. 3,

(6) FIG. 5 shows a schematic cross-sectional representation through a metal container with a ceramic layer accommodated in the container interior and an additional porous auxiliary ceramic layer,

(7) FIG. 6 shows a simplified schematic cross-sectional representation through the metal container according to FIG. 3 accommodated in an auxiliary tool,

(8) FIG. 7 shows a simplified schematic cross-sectional representation through a stack comprising first and second metal layers and a ceramic layer accommodated in between, which are connected at the edges by a peripheral, frame-like solder joint,

(9) FIG. 8 shows a schematic plan view of the stack according to FIG. 6, and

(10) FIGS. 9a-d show several variants of embodiment of a stack comprising four metal layers and a ceramic layer for producing a metal-ceramic substrate according to the method according to the invention.

DETAILED DESCRIPTION OF THE INVENTION

(11) FIG. 1 shows, in a simplified schematic representation, a cross-section through a standard embodiment of a metal-ceramic substrate 1 comprising a ceramic layer 2 with an upper side 2.1 and a lower side 2.2, which are provided respectively with a metallization 3, 4, namely the upper side 2.1 comprises a first metallization 3 and the lower side 2.2 a second metallization 4.

(12) Metallizations 3, 4 can be produced from the same or different metal(s) and can be constituted structured for the formation of contact surfaces and/or an electronic circuit. First and second metallizations 3, 4 are preferably connected directly and flat with the upper and lower side 2.1, 2.2, respectively.

(13) First and second metallizations 3, 4 are produced for example from copper or a copper alloy or aluminium or an aluminium alloy. The layer thickness of the first and second metallizations 3, 4 amounts to at least 20 micrometer, preferably between 20 and 900 micrometer, wherein layer thicknesses between 150 and 600 micrometer preferably being used in the area of microelectronics and layer thicknesses between 50 and 150 micrometer preferably being used in the LED area. It goes without saying that other suitable metals can also be used to produce metallizations 3, 4.

(14) Ceramic layer 2 is produced for example from an oxide, nitride or carbide ceramic such as aluminium oxide (Al.sub.2O.sub.3) or aluminium nitride (AlN) or silicon nitride (Si.sub.3N.sub.4) or silicon carbide (SiC) or from aluminium oxide with zirconium oxide (Al.sub.2O.sub.3+ZrO.sub.2) and has a layer thickness for example between 50 micrometer and 1000 micrometer, preferably between 200 micrometer and 700 micrometer.

(15) This is where the invention comes in and proposes an efficient method for producing a metal-ceramic substrate 1 comprising such first and second metallizations 3, 4 and at least one ceramic layer 2 accommodated between first and second metallizations 3, 4. According to the invention, the direct flat connection between respective metallizations 3, 4 and ceramic layer 2 is produced by using a pressure-induced connection process, and more precisely the hot-isostatic pressing process (HIP process), in order to effectively prevent the emergence of cavities or micro-cavities in the connection region between respective metallizations 3, 4 and ceramic layer 2. Much thinner metal layers 5, 6 can also be processed by means of the hot-isostatic pressing process as compared to the DCB process, for example even from a minimum layer thickness of approx. 50 micrometer.

(16) The basic mode of operation of the hot-isostatic pressing process or the so-called HIP method or HIP process is known. The pressure preferably applied in a two-dimensionally extending manner to the layers to be connected can be generated mechanically and/or by means of a gas or fluid. The layer thickness can advantageously be reduced with the use of the HIP process for producing a preferably flat connection between metallizations 3, 4 and ceramic layer 2 as compared to the other connection methods, in particular metal layers having a thickness of 50 micrometer and over can be processed.

(17) For the pressure-induced flat connection of first and second metallizations 3, 4 to ceramic layer 2, first and second metal layers 5, 6 are the first provided, which are stacked superposed together with ceramic layer 2, and more precisely such that ceramic layer 2 is accommodated between metal layers 5, 6. The layer sequence of metal-ceramic substrate 1 represented in FIG. 1 is thus already present, wherein first and second metal layers 5, 6 and ceramic layer 2 do not yet have a flat connection.

(18) First and second metal layers 5, 6 are adapted in terms of their cross-sectional shape essentially to the cross-sectional shape of ceramic layer 2. Ceramic layer 2 preferably has a rectangular or square cross-sectional shape. Alternatively, however, ceramic layer 2 can also have a round, oval or an otherwise polygonal cross-sectional shape.

(19) First and second metal layers 5, 6 overlap with their free edge sections 5a, 6a free edge 2 of ceramic layer 2, namely over the entire course of free edge 2 of ceramic layer 2. First and second metal layers 5, 6 thus project outwards with their free edge sections 5a, 6a from free edge 2a of ceramic layer 2, and for example over a length L of between 3 mm and 30 mm. Length L is selected here depending on the layer thickness of first and second metal layers 5, 6.

(20) In the present example of embodiment, a stack comprising first and second metal layers 5, 6 and ceramic layer 2 is formed according to FIG. 2, wherein ceramic layer 2 lies flat on second metal layer 6 and first metal layer 5 then follows on the latter, i.e. ceramic layer 2 is accommodated between first and second metal layers 5, 6 in the stack and free edge sections 5a, 6a of the first and second metal layers 5, 6 project beyond ceramic layer 2 at the edges.

(21) According to the invention, a gas-tight sealed metal container 7 with a container interior 8 is formed from first and second metal layers 5, 6, in which container interior ceramic layer 2 is completely accommodated. In this regard, first and second metal layers 5, 6 are deformed towards one another in the region of projecting free edge sections 5a, 6a, and more precisely by applying lateral clamping forces F, F preferably acting perpendicular to the surface of metal layers 5, 6, which clamping forces are orientated respectively in the direction of upper and lower sides 2.1, 2.2 of ceramic layer 2. The flat sections of first and second metal layers 5, 6 directly adjacent to ceramic layer 2 preferably run parallel to upper side and lower sides 2.1, 2.2 of ceramic layer 2. Metal container 7 thus essentially comprises two half-shell shaped halves 7.1, 7.2, which are formed by first and second deformed metal layers 5, 6.

(22) In the present example of embodiment, free edge sections 5a of first metal layer 5 are acted upon by a clamping force F acting vertically downwards i.e. in the direction of ceramic layer 2, and free edge sections 6a of second metal layer 6 are acted upon by a clamping force F acting vertically upwards, i.e. in the direction of ceramic layer 2, and are thus clamped together and a corresponding deformation of metal layers 5, 6 in their free edge sections 5a, 6a is thus achieved. Correspondingly deformed free edge sections 5a, 6a are connected directly together, and more precisely along a peripheral, i.e. annular, connection region VB. Free edge sections 5a, 6a preferably produce a gas-tight sealed edge of metal container 7 running flush. Metal container 7 thus forms an encapsulation of ceramic layer 2 by means of container halves 7.1, 7.2 constituted half-shell shaped and connected together gas-tight.

(23) The direct connection of deformed free edge sections 5a, 6a at the edges in annular connection region VB preferably takes place by welding, in particular by contact welding or laser welding or by soldering, also hard soldering. Alternatively, the direct connection at the edges can also be produced by means of a mechanical-connection and/or processing method, and more precisely by rolling, pressing and/or flanging of free edge sections 5a, 6a, wherein a gas-tight mechanical connection at the edges between the two metal layers 5, 6 also arises here along annular connection region VB. With a connection by means of laser welding, free edge sections 5a, 6a are preferably welded to one another at the outer edges, and preferably at an angle between 45 and 90. In a variant of embodiment, the direct connection at the edges takes place in an atmosphere advantageous for the connection process, for example in a vacuum, in an air atmosphere or in an inert gas atmosphere using, for example, nitrogen or argon as an inert gas.

(24) FIG. 3 shows by way of example a schematic cross-section through metal container 7 with ceramic layer 2 accommodated in container interior 8, from which the half-shell shaped embodiment of the container halves can also be seen. FIG. 4 shows by way of example a plan view of metal container 7 and the course of annular connection region VB indicated by a dashed line.

(25) Metal layers 5, 6 forming metal container 1 with ceramic layer 2 accommodated in container interior 8 are then pressed together hot-isotatically in a treatment chamber (not represented in the figures) at a gas pressure between 500 and 2000 bar and a process temperature between 300 C. and the melting temperature of metal layers 5, 6. A diffusion bond is thus produced between upper side 2.1 of ceramic layer 2 and the section of the first metal layer 5 in direct connection with the latter and between lower side 2.2 of ceramic layer 2 and the section of second metal layer 6 in direct connection with the latter, said diffusion bond comprising no cavities or micro-cavities and having a high adhesive strength.

(26) Metal container 1 is subjected to a clamping force F, F and thus clamped in the region of free edge sections 5a, 6a, preferably along annular connection region VB, by means of an auxiliary tool 9 with for example two half shells 9.1, 9.2. This simplifies the production of a direct connection at the edges between free edge sections 5a, 6a, in particular of a laser welding connection. A working medium such as oxygen or suchlike can thus also be introduced into container interior 8, without the latter already being permanently sealed. FIG. 6 shows by way of example a cross-section through metal container 1 accommodated in auxiliary tool 9.

(27) After the hot-isostatic pressing, at least in sections, of metal layers 5, 6 or container halves 7.1, 7.2 with ceramic layer 2, free edge sections 5a, 6a are removed, preferably by a mechanical processing method or a suitable etching process. The remaining sections of first and second metal layers 5, 6 connected to upper and lower sides 2.1, 2.2 of ceramic layer 2 form first and second metallizations 3, 4 of metal-ceramic substrate 1.

(28) In a variant of embodiment, the subjecting of metal layers 5, 6 to clamping force F, F and the subsequent connection at the edges of free edge sections 5a, 6a takes place in the ambient atmosphere, i.e. even after the sealing of metal container 7 forming an encapsulation of ceramic layer 2, there is still at least residual air or a residual gas present in container interior 8. Due to the residual air or the residual gas, however, inclusions can arise in the connection region between metal layers 5, 6 and ceramic layer 2 when the HIP process is carried out.

(29) In a variant of embodiment, metal layers 5, 6 and ceramic layer 2 are first stacked and clamped under an air atmosphere, for example by means of auxiliary tool 9, and are then directly connected to one another at the edges.

(30) According to a further variant of embodiment, the container interior 8 is evacuated and therefore the residual air present in container interior 8 or the residual gas present therein is preferably completely removed before the direct connection of free edge sections 5a, 6a of metal layers 5, 6 at the edges in order to prevent inclusions.

(31) Furthermore, the adhesive strength of the pressure-induced direct connection can be increased by producing an oxide layer on upper or lower sides 2.1, 2.2 during the HIP process. The oxygen proportion in the ambient atmosphere, however, is often too small for a suitable oxide layer to form on metal layers 5, 6 and/or ceramic layer 2. Such an oxide layer preferably comprises copper doping.

(32) In order to assist the formation of a suitable oxide layer, oxygen can be fed to the production process, and more precisely metal layers 5, 6 can already be exposed to oxygen during the forming of the stack.

(33) Alternatively or in addition, oxygen can be introduced into container interior 8 before the connection of metal layers 5, 6 at the edges and metal layers 5, 6 can be pretreated with oxygen. Such flooding of container interior 8 with oxygen takes place for example before the edge clamping of metal layers 5, 6 or after the evacuation of container interior 8.

(34) The formation of an oxide layer can also be effectively assisted by a preliminary treatment of ceramic layer 2, and for example by applying an auxiliary layer by means of a mechanical-chemical process. In this mechanical-chemical process, a layer of copper, copper oxide or other copper-containing compounds is deposited on at least one side 2.1, 2.2 of ceramic layer 2, in particular an AIN substrate to produce the auxiliary layer. The deposition of this auxiliary layer can be carried out using alternative methods. Copper, copper oxide or other copper-containing compounds can be deposited for example by means of sputtering processes, currentless deposition of copper with a standard bath, vapour deposition, screen-printing, immersion in solutions etc. Ceramic layer 2, in particular the AIN substrate, then undergoes an oxidation process by means of which copper, copper oxide or other copper compounds are oxidised.

(35) In particular, when use is made of an aluminium nitride ceramic layer 2 for producing metal-ceramic substrate 1, the mechanical interlocking of mutually opposite layers 2, 5, 6 arising in the performance of the HIP pressing process already has sufficient adhesive strength, i.e. additional production of an intermediate layer is not necessary, since an oxide layer that is sufficient to create a connection forms by itself on the surface of aluminium nitride ceramic layer 2 on account of the ambient oxygen.

(36) When use is made of a silicon nitride ceramic layer 2, a preliminary treatment to produce an intermediate layer is likewise not necessary. The ambient oxygen or the residual oxygen in the container interior is sufficient to allow the formation of a silicon dioxide layer advantageous for the connection process.

(37) In order to promote the formation of a natural oxide layer on the ceramic surface, metal layers 5, 6 to be connected to ceramic layer 2 can be enriched with oxygen. This oxygen can be released by the enriched metal layers 5, 6 during the HIP pressing process.

(38) In a variant of embodiment, rinsing of container interior 8 after the clamping is conceivable with an inert gas, for example oxygen or argon.

(39) In an alternative variant of embodiment, a porous material 11, for example metal or ceramic, can be accommodated in container interior 8 in addition to ceramic layer 2 in order to absorb the residual air or the residual gas present in container interior 8, said porous material forming an absorption reservoir for the residual gas present in container interior 8 during the performance of the HIP process. An atmosphere advantageous for performing the HIP process is created by means of porous material 11.

(40) Porous material 11 is preferably evacuated before introduction into container interior 8. In a variant of embodiment, porous material 11 is provided with a gas-tight sealing layer 12 before introduction into container interior 8, porous materials 11 without a gas-tight sealing layer 12 also being able to be used. In the performance of the HIP process, gas-tight sealing layer 12 is split open and the residual gas present in container interior 8 is absorbed in a targeted manner by evacuated porous auxiliary ceramic layer 11.

(41) Alternatively or in addition, porous material 11, in particular prior to the application of a gas-tight sealing layer 12, can be charged with oxygen in an oxygen atmosphere. Gas-tight sealing layer 12 in each case forms a gas-tight casing of porous material 11. FIG. 5 shows by way of example a cross-section through a metal container 7 according to FIG. 3, in which at least one porous auxiliary ceramic layer 11 with a gas-tight sealing layer 12 is accommodated in addition to ceramic layer 2. It goes without saying that a plurality of layers of such porous materials 11 can also be provided in a different form and arrangement inside metal container 7.

(42) Porous material 11 can also be provided for example with a copper oxide layer. Such a CuO layer is converted in the HIP process into oxygen and Cu.sub.2O. The oxygen hereby liberated contributes to the oxidation of metal layers 5, 6 and of ceramic layer 2. Apart from CuO, use can also be made of other oxides which, under the process parameters of the HIP process, in particular temperature and pressure, liberate oxygen and promote the formation of an oxide layer, and more precisely for example MnO, VO, TiO and Mo.sub.3O.

(43) In a further variant of embodiment, first metal layer 5 is produced from copper or a copper alloy and second metal layer 6 is produced from aluminium or an aluminium alloy.

(44) Also, for example, a further metal layer 5 of aluminium can be provided between ceramic layer 2 and a first metal layer 5 of copper, which are also stacked superposed. Analogous hereto, a further metal layer 6 can also be accommodated between second metal layer 6 and ceramic layer 2. First and second metal layers 5, 6 and respectively further metal layers 5, 6 are preferably connected together by means of roll bonding.

(45) FIG. 9 shows by way of example different variants of embodiment (a) to (d) of a metal-ceramic substrate 1 with a first metal layer 5 of copper and a further metal layer 5 of aluminium and as well as a second metal layer 6 of copper and a further metal layer 6 of aluminium, which are connected together by means of the method according to the invention. In variant of embodiment (c), metal layers 5, 6, 5, 6 are loosely stacked superposed, whereas in variant of embodiment (d) a connection exists between the upper and lower two metal layers 5, 5 and respectively 6, 6. The connection can be produced either by roll bonding of the copper layers and aluminium layers 5, 5 and 6, 6 or by welding at the edges. In variant of embodiment (a), further metal layers 5, 6 extend only partially over upper and lower sides 2.1, 2.2 of the ceramic layer, i.e. it is arranged offset inwards at the edge. Variant of embodiment (b) shows a flush edge course of further metal layers 5, 6 with ceramic layer 2 and according to variant of embodiment (c) further metal layers 5, 6 extend over free edge 2 of ceramic layer 2, but inside the edge of first and second metal layers 5, 6. In variant of embodiment (d), first metal layer 5 and assigned further metal layer 5 and/or second metal layer 6 and further metal layer 6 each have a flush edge course, i.e. they are constituted identical to one another with regard to shape. Furthermore, it is possible to provide a different layer structure on upper and lower sides 2.1, 2.2 of ceramic layer 2 or to provide a combination of variants of embodiment (a) to (d) represented in FIG. 9.

(46) Furthermore, ceramic layer 2 or its upper and/or lower sides 2.1, 2.2 can be coated over its entire area with a hard solder layer before the method according to the invention is carried out. The soldering process is, as it were, thus integrated into the HIP process. The layer thickness of the hard solder layer can be advantageously reduced here compared to the known active soldering method, i.e. a smaller quantity of solder is advantageously required, because as a result of the HIP process metal layers 5, 6 are also pressed into unevennesses of upper and/or lower sides 2.1, 2.2.

(47) FIGS. 7 to 8 describe a method for producing a metal-ceramic substrate 1, this method being an alternative method for encapsulating ceramic layer 2 in a metal container 7. According to this method, ceramic layer 2 is provided at the edges with a peripheral, frame-like solder layer 13 at upper and lower sides 2.1, 2.2 and a stack comprising first and second metal layers 5, 6 and ceramic layer 2 is then formed.

(48) In a subsequent step, the stack is heated in such a way that the prepared peripheral, frame-like solder layer 13 leads to a solder joint 14 at the edges between respective metal layers 5, 6 and ceramic layer 2. As a result of the heating and the previous evacuation of gap-like intermediate spaces 15, 15 between respective metal layers 5, 6 and ceramic layer 2, an advantageous atmosphere is present for performing the hot-isostatic process or HIP process.

(49) Solder joint 14 at the edges also forms a preferably annular connection region VB. Finally, the stack comprising first and second metal layers 5, 6 and ceramic layer 2 and formed by solder joint 14 at the edges is in turn introduced into a treatment chamber (not represented) and, at a gas pressure between 500 and 2000 bar and a process temperature between 300 C. and the melting temperature of metal layers 5, 6 or of solder layer 13, said metal layers are hot-isostatically pressed with ceramic layer 2. The sections of respective metal layers 5, 6 connected in a two-dimensionally extending manner to ceramic layer 2 form metallizations 3, 4 of metal-ceramic substrate 1.

(50) Edge sections 5b, 6b of metal layers 5, 6 connected by means of ceramic layer 2 via solder joint 14 at the edges are removed to delimit first and second metallizations 3, 4, and more precisely by means of a mechanical processing method or by means of a laser or a suitable etching process. The remaining sections of first and second metal layers 5, 6 thus form first and second metallizations 3, 4 of metal-ceramic substrate 1.

(51) Peripheral, frame-like solder layer 13 is for example constituted continuous, and preferably in the form of a closed ring. FIG. 8 shows by way of example the course of peripheral, frame-like solder layer 13 deposited on upper side 2.1 of ceramic layer 2.

(52) In a variant of embodiment of the two methods, one of the metal layers is connected to the ceramic layer, prior to the hot-isostatic pressing, by using a direct copper bonding process or a hot soldering or active soldering method. Metallizations with a different layer thickness from 50 micrometer can thus be produced.

(53) The invention has been described above on the basis of examples of embodiment. It goes without saying that numerous changes and modifications are possible without thereby departing from the inventive idea underlying the invention.

LIST OF REFERENCE NUMBERS

(54) 1 metal-ceramic substrate 2 ceramic layer 2 free edge 2.1 upper side 2.2 lower side 3 first metallization 4 second metallization 5 first metal layer 5 further metal layer 5a free edge section 5b edge region 6 second metal layer 6 further metal layer 6a free edge section 6b edge region 7 metal container 7.1, 7.2 container halves 8 container interior 9 auxiliary tool 9.1, 9.2 half-shells 11 porous material 12 gas-tight sealing layer 13 peripheral, frame-like solder layer 14 soldering joint at edges 15, 15 gap-like intermediate space VB, VB annular connection region F, F clamping forces