Light-emitting diode

Abstract

A light-emitting diode is disclosed, which includes: a substrate; a light-emitting diode chip disposed on the substrate; and a quantum dot film disposed on the light-emitting diode chip, wherein the quantum dot film includes a plurality of quantum dots and a matrix material, and a plurality of particles are dispersed in the matrix material, wherein the plurality of particles are conductive particles, semiconductor particles, or a combination thereof.

Claims

1. A light-emitting diode, comprising: a substrate; a light-emitting diode chip disposed on the substrate; and a quantum dot film disposed on the light-emitting diode chip, wherein the quantum dot film includes a plurality of quantum dots and a matrix material, and a plurality of particles are dispersed in the matrix material, wherein the plurality of particles are nano-wires made of a metal or a metal alloy.

2. The light-emitting diode of claim 1, wherein the plurality of quantum dots are photoluminescent quantum dots.

3. The light-emitting diode of claim 1, wherein the plurality of quantum dots are ligand-modified quantum dots.

4. The light-emitting diode of claim 1, wherein the matrix material is an inorganic material, silica gel, a polymer material, or a combination thereof.

5. The light-emitting diode of claim 1, wherein the substrate is a metal substrate, a semiconductor substrate, or a substrate provided with a circuit layer.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 is a schematic cross-sectional view showing a light-emitting diode according to Example 1 of the present disclosure;

(2) FIG. 2 is a schematic cross-sectional view showing a light-emitting diode according to Example 2 of the present disclosure; and

(3) FIG. 3 is a schematic cross-sectional view of a test specimen used in Test Example of the present disclosure.

DETAILED DESCRIPTION OF THE EMBODIMENT

(4) The following embodiments when read with the accompanying drawings are made to clearly exhibit the above-mentioned and other technical contents, features and/or effects of the present disclosure. Through the exposition by means of the specific embodiments, people would further understand the technical means and effects the present disclosure adopts to achieve the above-indicated objectives. Moreover, as the contents disclosed herein should be readily understood and can be implemented by a person skilled in the art, all equivalent changes or modifications which do not depart from the concept of the present disclosure should be encompassed by the appended claims.

(5) Moreover, the prepositions mentioned in the present specification and claims, such as “above”, “over”, “on”, “below”, “beneath”, or “under”, may refer to direct contact of two elements, or may refer to indirect contact of two elements.

(6) In addition, the various features disclosed in different embodiments of the present disclosure may be combined to form another embodiment.

Example 1

(7) FIG. 1 is a schematic cross-sectional view showing a light-emitting diode of the present example.

(8) As shown in FIG. 1, first, a substrate 11 is provided. Thereafter, a light-emitting diode chip 12 is disposed on the substrate 11. Next, a quantum dot film 13 is formed on the light-emitting diode chip 12. The quantum dot film 13 may be formed on five surfaces of the light-emitting diode chip 12 except for the surface facing the substrate 11. However, the present disclosure is not limited thereto. In another embodiment of the present disclosure, the quantum dot film 13 may be formed only on the main light-emitting surface of the light-emitting diode chip 12, for example, on the surface of the light-emitting diode chip 12 opposite to the surface facing the substrate 11. In the present embodiment, the quantum dot film 13 includes a plurality of quantum dots 131 and a matrix material 132, and a plurality of particles 133 are dispersed in the matrix material 132. The particles 133 may be conductive particles, semiconductor particles, or a combination thereof.

(9) Through the steps described above, a light-emitting diode of the present embodiment can be obtained and includes: a substrate 11; a light-emitting diode chip 12 disposed on the substrate 11; and a quantum dot film 13 disposed on the light-emitting diode chip 12, wherein the quantum dot film 13 includes a plurality of quantum dots 131 and a matrix material 132, and a plurality of particles 133 are dispersed in the matrix material 132, wherein the plurality of particles 133 may be conductive particles, semiconductor particles, or a combination thereof.

(10) Herein, the substrate 11 is a metal substrate, a semiconductor substrate, or a substrate provided with a circuit layer. In the present embodiment, an aluminum substrate is used as the substrate 11. The light-emitting diode chip 12 may be a blue light chip with an epitaxial layer, a face-up LED chip, a vertical LED chip, or a flip-chip LED chip. In the present embodiment, the light-emitting diode chip 12 is a flip-chip LED chip. The quantum dots 131 are photoluminescent quantum dots, which may be perovskite quantum dots, such as all-inorganic CsPbX.sub.3 (X=Cl, Br, or I), organic-inorganic hybrid CH.sub.3NH.sub.3PbX.sub.3 (X=Cl, Br, or I), or the like; core-shell quantum dots, such as CdSe/ZnS; and cadmium-free quantum dots, such as InP/ZnS, CuInS, nano-carbon quantum dots, nano-silicon quantum dots, or the like. Also, the quantum dots 131 are ligand-modified photoluminescent quantum dots, and the ligand may be an organic ligand, a halogen ligand, a metal chalcogenide complex (MCC) ligand, or a combination thereof. In the present embodiment, the quantum dots 131 used are CsPbBr.sub.3 perovskite quantum dots modified with oleylamine. In addition, the particles 133 may be conductive particles, which may be made of a metal, a metal alloy, a transparent metal oxide, a conductive polymer, or a combination thereof. Alternatively, the particles 133 may be semiconductor particles, which are made of an elemental semiconductor, a compound semiconductor, or a combination thereof. Moreover, no matter the conductive particles or the semiconductor particles are used, the particles 133 may be nano-particles or nano-wires. In the present embodiment, the particles 133 are nano-silver wires. Furthermore, the matrix material 132 may be an inorganic material, silica gel, a polymer material, or a combination thereof in the present embodiment, the matrix material 132 used is silica gel.

Example 2

(11) FIG. 2 is a schematic cross-sectional view showing a light-emitting diode of the present example. The material, structure and preparation method of the light-emitting diode of the present example are similar to those of Example 1, except for the following differences.

(12) Regarding the manufacturing method, as shown in FIG. 2, first, a substrate 11 is provided. Thereafter, a light-emitting diode chip 12 is disposed on the substrate 11. Next, a plurality of quantum dots 131 is formed on the surfaces of the light-emitting diode chip 12. In this example, the plurality of quantum dots 131 may be formed on five surfaces of the light-emitting diode chip 12 except for the surface facing the substrate 11. Afterwards, a matrix material 132 dispersed with the particles 133 is formed on the plurality of quantum dots 131. Through the foregoing steps, the light-emitting diode of this example is obtained.

(13) In terms of structure, the quantum dot film 13 produced in this example includes the plurality of quantum dots 131 and the matrix material 132, and the particles 133 are dispersed in the matrix material 132. Specifically, the quantum dot film 13 includes a quantum dot layer formed of the plurality of quantum dots 131, and the matrix n material 132 dispersed with the particles 133.

Test Example

(14) FIG. 3 is a schematic cross-sectional view of a test specimen used in Test Example.

(15) In Test Example, the substrate 11 with the quantum dot film 13 formed thereon is used for testing. Herein, the quantum dot film 13 includes the plurality of quantum dots 131 and the matrix material 132, and the particles 133 are dispersed in the matrix material 132. In both the experimental and comparative examples of Test Example, the quantum dot films 13 uses the CsPbBr.sub.3 perovskite quantum dots modified with oleylamine as the quantum dots 131; the matrix material 132 is silica gel; and the particles 133 are silver nanowires. In addition, the substrate 11 is an iron substrate in the experimental example but a plastic substrate in the comparative example.

(16) The test method used in Test Example is carried out by irradiating the test specimen with strong blue light for eight hours. It is found that the quantum efficiency of the quantum dot film 13 under the use of the iron substrate as the substrate 11 is reduced by only 5%, while that under the use of the plastic substrate as the substrate 11 is reduced significantly by 70%.

(17) As shown in the test described above, when the quantum dot film includes quantum dots and the matrix material dispersed with the particles the silver nanowires, used as the conductive particles herein), the excess electrons in the conduction band may be released out effectively by the conductive particles, and then further released out of the light-emitting diode through the substrate having certain conductivity. Thereby, the service life of the quantum dot film can be effectively extended, which further prolongs the lifetime of the quantum dot light-emitting diode.

(18) Although the present disclosure has been explained in relation to its preferred embodiment, it is to be understood that many other possible modifications and variations can be made without departing from the spirit and scope of the disclosure as hereinafter claimed.