PHOSPHOR, METHOD FOR PREPARING PHOSPHOR, OPTOELECTRONIC COMPONENT, AND METHOD FOR PRODUCING OPTOELECTRONIC COMPONENT

Abstract

The present invention relates to a phosphor, a method for preparing the phosphor, an optoelectronic component, and a method for producing the optoelectronic component. The phosphor has the following general formula: La.sub.3(1x)Ga.sub.1yGe.sub.5(1z)O.sub.16: 3xA.sup.3+, yCr.sup.3+, 5zB.sup.4+, where x, y, and z do not equal to 0 simultaneously; A represents at least one of Gd and Yb; B represents at least one of Sn, Nb, and Ta. For the phosphor, its emission spectrum is within a red visible light region and a near-infrared region when excited by blue visible light, purple visible light or ultraviolet light; and it has a wide reflection spectrum and a high radiant flux. Therefore, it can be used in optoelectronic components such as LEDs to meet requirements of current medical testing, food composition analysis, security cameras, iris/facial recognition, virtual reality, gaming notebook and light detection and ranging applications.

Claims

1. A phosphor comprising the following general formula:
La.sub.3(1x)Ga.sub.1yGe.sub.5(1z)O.sub.16: 3xA.sup.3+, yCr.sup.3+, 5zB.sup.4+, wherein x, y, and z do not equal to 0 simultaneously; A represents at least one of Gd and Yb; and B represents at least one of Sn, Nb, and Ta.

2. The phosphor according to claim 1, wherein0 custom-character 3x0.3,0y0.2, 05z0.2.

3. The phosphor according to claim 1, further comprising the following general formula:
La.sub.3Ga.sub.1yGe.sub.5O.sub.16: yCr.sup.3+, wherein 0<y custom-character 0.2.

4. The phosphor according to claim 1, further comprising the following general formula: La.sub.3(1x)Ga.sub.1yGe.sub.5O.sub.16: 3xA.sup.3+, yCr.sup.3+, wherein 0 custom-character 3x0.3, 0y0.2, and x and y do not equal to 0 simultaneously.

5. The phosphor according to claim 1, further comprising at least one of the following conditions based on the composition of La.sub.3GaGe.sub.5O.sub.16: Cr.sup.3+ replaces part of Ga.sup.3+; A.sup.3+ replaces part of La.sup.3+; B.sup.4+ replaces part of Ge.sup.4+.

6. The phosphor according to claim 1, further emitting light in a range of 600-1500 nm when excited by the excitation light having a wavelength of 400-500 nm.

7. The phosphor according to claim 6, further emitting the light comprising a radiant flux 4-70 mW.

8. The phosphor according to claim 1, being prepared by a method comprising steps of: Weighting the stating precursors selecting from oxide or carbonate containing materials and mixing raw materials for providing elements in the general formula according to the general formula of the phosphor, then sintering at a temperature of 1200-1500 C. to obtain the phosphor

9. The phosphor according to claim 1, being prepared by a method comprising steps of: Preparing and mixing raw materials for providing elements in the general formula according to the general formula of the phosphor, then sintering at a temperature of 1200-1500 C. to obtain the phosphor.

10. An optoelectronic component, comprising: a semiconductor chip for emitting excitation light during operation of the optoelectronic component; and a conversion unit provided with the phosphor according to claim 1 for converting the excitation light into emitted light.

11. The optoelectronic component according to claim 10, wherein the excitation light has a wavelength of 450 nm or 460 nm, and the emitted light has a wavelength of 650-1050 nm.

12. The optoelectronic component according to claim 10, wherein the semiconductor chip is a blue LED chip.

13. A method for producing an optoelectronic component, comprising steps of: producing a conversion unit on which the phosphor according to claim 1 is provided; and mounting the conversion unit on a semiconductor chip, wherein the semiconductor chip is used to generate excitation light during operation of the optoelectronic component.

Description

BRIEF DESCRIPTION OF DRAWING(S)

[0056] FIG. 1 is the X-ray diffraction spectrum of the phosphor La.sub.3Ga.sub.0.99Ge.sub.5O.sub.16: 0.01Cr.sup.3+ according to Example 1;

[0057] FIG. 2 is the X-ray diffraction spectrum of the phosphor La.sub.3Ga.sub.0.93Ge.sub.5O.sub.16: 0.07Cr.sup.3+ according to Example 1;

[0058] FIG. 3 is the photoluminescence emission spectrum (the excitation light has a wavelength of 460 nm) of the phosphor La.sub.3Ga.sub.0.99Ge.sub.5O.sub.16: 0.01Cr.sup.3+ according to Example 1;

[0059] FIG. 4 is the photoluminescence emission spectrum (the excitation light has a wavelength of 450 nm) of the phosphor La.sub.3Ga.sub.0.93Ge.sub.5O.sub.16: 0.07Cr.sup.3+ according to Example 1;

[0060] FIG. 5 is the X-ray diffraction spectrum of the phosphor La.sub.2.97Ga.sub.0.99Ge.sub.5O.sub.16: 0.03Gd.sup.3+, 0.01Cr.sup.3+ according to Example 2;

[0061] FIG. 6 is the photoluminescence emission spectrum (the excitation light has a wavelength of 460 nm) of the phosphor La.sub.2.97Ga.sub.0.99Ge.sub.5O.sub.16: 0.03Gd.sup.3+, 0.01Cr.sup.3+ according to Example 2;

[0062] FIG. 7 is the X-ray diffraction spectrum of the phosphor La.sub.2.97Ga.sub.0.99Ge.sub.5O.sub.16: 0.03Yb.sup.3+, 0.01Cr.sup.3+ according to Example 3;

[0063] FIG. 8 is the photoluminescence emission spectrum (the excitation light has a wavelength of 460 nm) of the phosphor La.sub.2.97Ga.sub.0.99Ge.sub.5O.sub.16: 0.03Yb.sup.3+, 0.01Cr.sup.3+ according to Example 3;

[0064] FIG. 9 is the X-ray diffraction spectrum of the phosphors according to Examples 4-5;

[0065] FIG. 10 is the photoluminescence emission spectrum (the excitation light has a wavelength of 450 nm) of the phosphor La.sub.2.97Ga.sub.0.93Ge.sub.5O.sub.16: 0.03Gd.sup.3+, 0.07Cr.sup.3+ according to Example 4;

[0066] FIG. 11 is the photoluminescence emission spectrum (the excitation light has a wavelength of 450 nm) of the phosphor La.sub.2.97Ga.sub.0.93Ge.sub.4.95O.sub.16: 0.03Gd.sup.3, 0.07Cr.sup.3+, 0.05Sn.sup.4+ according to Example 5;

[0067] FIG. 12 is a schematic structural diagram of the optoelectronic component according to Example 6;

[0068] FIG. 13 is the photoluminescence emission spectrum (the excitation light has a wavelength of 450 nm) of the phosphor having different doping concentrations of Cr.sup.3+ according to Experimental Example 1;

[0069] FIG. 14 is a graph showing the relationship between the doping concentration of Cr.sup.3+ and the radiant flux according to Experimental Example 1;

[0070] FIG. 15 is the photoluminescence emission spectrum (the excitation light has a wavelength of 450 nm) of the phosphor having different doping concentrations of Gd.sup.3+ according to Experimental Example 2;

[0071] FIG. 16 is a graph showing the relationship between the doping concentration of Gd.sup.3+ and the radiant flux according to Experimental Example 2;

[0072] FIG. 17 is the photoluminescence emission spectrum (excitation light has a wavelength of 450 nm) of the phosphor having different doping concentrations of Sn.sup.4+ according to Experimental Example 3;

[0073] FIG. 18 is a graph showing the relationship between the doping concentration of Sn.sup.4+ and the radiant flux according to Experimental Example 3;

[0074] FIG. 19 is the photoluminescence emission spectrum (the excitation light has a wavelength of 450 nm) of the La.sub.3Ga.sub.0.99Ge.sub.5O.sub.16: 0.01Cr.sup.3+ and La.sub.3Ga.sub.4.95Ge.sub.0.9O.sub.14: 0.05Cr.sup.3+ according to Comparative Example 1;

[0075] FIG. 20 is the X-ray diffraction spectrum of the phosphor according to Example 7;

[0076] FIG. 21 is the photoluminescence emission spectrum (the excitation light has a wavelength of 460 nm) of the phosphor according to Example 7;

[0077] FIG. 22 is the X-ray diffraction spectrum of the phosphor La.sub.3Ga.sub.4.95Ge.sub.0.9O.sub.14: 0.05Cr.sup.3+, 0.1Sn.sup.4+ according to Example 8;

[0078] FIG. 23 is the X-ray diffraction spectrum of the phosphor La.sub.3Ga.sub.4.95Ge.sub.0.7O.sub.14: 0.05Cr.sup.3+, 0.3Sn.sup.4+ according to Example 8;

[0079] FIG. 24 is the X-ray diffraction spectrum of the phosphor La.sub.3Ga.sub.4.95Ge.sub.0.5O.sub.14: 0.05Cr.sup.3+, 0.5Sn.sup.4+ according to Example 8;

[0080] FIG. 25 is the photoluminescence emission spectrum (the excitation light has a wavelength of 460 nm) of the phosphor La.sub.3Ga.sub.4.95Ge.sub.0.9O.sub.14: 0.05Cr.sup.3+, 0.1Sn.sup.4+ according to Example 8;

[0081] FIG. 26 is the photoluminescence emission spectrum (the excitation light has a wavelength of 460 nm) of the phosphor La.sub.3Ga.sub.4.95Ge.sub.0.7O.sub.14: 0.05Cr.sup.3+, 0.3Sn.sup.4+ according to Example 8;

[0082] FIG. 27 is the photoluminescence emission spectrum (the excitation light has a wavelength of 460 nm) of the phosphor La.sub.3Ga.sub.4.95Ge.sub.0.5O.sub.14: 0.05Cr.sup.3+, 0.5Sn.sup.4+ according to Example 8; and

[0083] FIG. 28 is a schematic structural diagram of the optoelectronic component according to Example 9 of the present application.

DETAILED DESCRIPTION

[0084] In order to describe objectives, technical solutions and advantages of examples of the present application more clearly, the technical solutions in the examples of the present application will be described hereunder clearly and completely with reference to the accompanying drawings in the examples of the present application. The described examples are only a part of examples, rather than all examples of the present application. All other examples obtained by those skilled in the art based on the embodiments of the present application without any creative effort should fall within the scope of the present application.

[0085] The raw materials used in the following examples: La.sub.2O.sub.3, Ga.sub.2O.sub.3 and Cr.sub.2O.sub.3 have a purity of 99.9% respectively, all of which are commercially available from Merck; GeO.sub.2 has a purity of 99.9%, which is commercially available from Aldrich; Gd.sub.2O.sub.3, Yb.sub.2O.sub.3 and SnO.sub.2 have a purity of 99.9% respectively, all of which are commercially available from Sigma Aldrich.

[0086] The tubular and muffle furnace is commercially available from Eurotherm. The

[0087] X-ray diffraction spectrum of the sample powders of the phosphor is measured by an X-ray diffractometer commercially available from BRUKER AXS with a model number of Desktop Bruker D2 PHASER A26-X1-A2B0B2A (Serial No. 205888). The photoluminescence emission spectrum of the sample powders of the phosphor is measured by Gemini 180 and iR320 commercially available from Horiba (Jobin Yvon).

EXAMPLE 1

[0088] The present example provides a set of phosphors having a general formula of La.sub.3Ga.sub.1yGe.sub.5O.sub.16: yCr.sup.3+, where 0<y custom-character 0.2, the chemical formulas of the set of phosphors are as follows:

[0089] La.sub.3Ga.sub.0.995Ge.sub.5O.sub.16: 0.005Cr.sup.3+

[0090] La.sub.3Ga.sub.0.99Ge.sub.5O.sub.16: 0.0 1Cr.sup.3+

[0091] La.sub.3Ga.sub.0.97Ge.sub.5O.sub.16: 0.03Cr.sup.3+

[0092] La.sub.3Ga.sub.0.95Ge.sub.5O.sub.16: 0.05Cr.sup.3+

[0093] La.sub.3Ga.sub.0.93Ge.sub.5O.sub.16: 0.07Cr.sup.3+

[0094] La.sub.3Ga.sub.0.91Ge.sub.5O.sub.16: 0.09Cr.sup.3+

[0095] La.sub.3Ga.sub.0.89Ge.sub.5O.sub.16: 0.11Cr.sup.3+

[0096] La.sub.3Ga.sub.0.87Ge.sub.5O.sub.16: 0.13Cr.sup.3+

[0097] The preparing method of the set of phosphors is as follows: according to stoichiometric ratios in the molecular formulae of the phosphors, accurately weighing the raw materials La.sub.2O.sub.3, Ga.sub.2O.sub.3, GeO.sub.2 and Cr.sub.2O.sub.3; placing the weighed raw materials in an agate mortar to grind for evenly mixing; then transferring the resulting mixture to an alumina crucible; placing in a muffle furnace and sintering in an air atmosphere at a temperature of about 1250-1300 C. for about 5-6 hours; and after cooling with the furnace, grinding into powders to obtain a target phosphor.

[0098] FIG. 1 and FIG. 2 shows the X-ray diffraction spectrums of La.sub.3Ga.sub.0.99Ge.sub.5O.sub.16: 0.01Cr.sup.3+ and La.sub.3Ga.sub.0.93Ge.sub.5O.sub.16: 0.07Cr.sup.3+, respectively. X-ray diffraction spectrums of other phosphors in the set are similar to those in FIG. 1-FIG. 2. As shown in FIG. 1 and FIG. 2, the X-ray diffraction spectrum of the above two phosphors are respectively compared with a standard X-ray diffraction spectrum. All the diffraction peaks of the two phosphors are consistent with a standard spectrum JCPDS 890211 (ICSD-50521) and no impurity peak is observed, indicating that the incorporation of Cr.sup.3+ incurred no changes in the crystal structure, that is, the activator Cr.sup.3+ successfully entered into the crystal lattice. Further, the crystals of La.sub.3Ga.sub.0.99Ge.sub.5O.sub.16: 0.01Cr.sup.3+ and La.sub.3Ga.sub.0.93Ge.sub.5O.sub.16: 0.07Cr.sup.3+ belong to a triclinic system, and a space group is P-1(2).

[0099] FIG. 3 and FIG. 4 shows the photoluminescence emission spectrums of La.sub.3Ga.sub.0.99Ge.sub.5O.sub.16: 0.01Cr.sup.3+ and La.sub.3Ga.sub.0.93Ge.sub.5O.sub.16: 0.07Cr.sup.3+, respectively. The photoluminescence emission spectrums of other phosphors are similar to those in FIG. 3 and FIG. 4. As shown in FIG. 3 and FIG. 4, when excited by excitation light of 460 nm or 450 nm, the emission spectrums of La.sub.3Ga.sub.0.99Ge.sub.5O.sub.16: 0.01Cr.sup.3+ and La.sub.3Ga.sub.0.93Ge.sub.5O.sub.16: 0.07Cr.sup.3+ cover the spectral range of 600-1100 nm, especially a spectral range of 650-1050 nm.

[0100] Based on the above test and characterization results, considering the ionic radius and valence state, it can be determined that, in the set of phosphors, the incorporation of Cr.sup.3+ replaces the lattice position of Ga.sup.3+ in the matrix.

EXAMPLE 2

[0101] The present example provides a phosphor having a molecular formula of La.sub.2.97Ga.sub.0.99Ge.sub.5O.sub.16: 0.03Gd.sup.3+, 0.01Cr.sup.3+, the preparing method of the phosphor is as follows:

[0102] According to a stoichiometric ratio in the molecular formula of the phosphor, accurately weighing the raw materials La.sub.2O.sub.3, Ga.sub.2O.sub.3, GeO.sub.2, Gd.sub.2O.sub.3 and Cr.sub.2O.sub.3, and placing the weighed raw materials into an agate mortar to grind for evenly mixing; then transferring the mixture to an alumina crucible; placing in a muffle furnace and sintering in an air atmosphere; controlling the temperature at about 1250 C. to sinter for about 6 hours; and after cooling in the furnace, grinding into powders to obtain the phosphor.

[0103] As shown in FIG. 5, the X-ray diffraction spectrum of the phosphor is compared with the standard X-ray diffraction spectrum. All the diffraction peaks of the phosphor are consistent with the standard spectrum JCPDS 890211 (ICSD-50521) and no impurity peak is detected, indicating that the activator Cr.sup.3+ and the sensitizer Gd.sup.3+ successfully entered into the crystal lattice. Further, the crystal of the phosphor belongs to the triclinic system, and the space group is P-1 (2).

[0104] As shown in FIG. 6, when excited by the excitation light of 460 nm, the emission spectrum of La.sub.2.97G.sub.0.99Ge.sub.5O.sub.16: 0.03Gd.sup.3+, 0.01Cr.sup.3+ covers a spectral range of 600-1100 nm, especially a spectral range of 650-1050 nm.

[0105] Based on the above test and characterization results, considering the ionic radius and valence state, it can be determined that, in the phosphor, the incorporation of Cr.sup.3+ replaces the lattice position of Ga.sup.3+ in the matrix; similarly, the co-doped Gd.sup.3+ replaces La.sup.3+ on the original site of the matrix lattice.

EXAMPLE 3

[0106] The present example provides a phosphor having a molecular formula of La.sub.2.97Ga.sub.0.99Ge.sub.5O.sub.16: 0.03Yb.sup.3+, 0.01Cr.sup.3+, the preparing method of the phosphor is as follows:

[0107] According to a stoichiometric ratio in the molecular formula of the phosphor, accurately weighing the raw materials La.sub.2O.sub.3, Ga.sub.2O.sub.3, GeO.sub.2, Yb.sub.2O.sub.3 and Cr.sub.2O, and placing the weighed raw materials into an agate mortar to grind for evenly mixing; then transferring the mixture to an alumina crucible; placing in a muffle furnace and sintering in an air atmosphere; controlling the temperature at about 1250 C. to sinter for about 6 hours; and after cooling with the furnace, grinding into powders to obtain the phosphor.

[0108] As shown in FIG. 7, the X-ray diffraction spectrum of the phosphor was compared with a standard X-ray diffraction spectrum. All the diffraction peaks of the phosphor are consistent with the standard spectrum JCPDS 890211 (ICSD-50521) and no impurity peak is detected, indicating that the activator Cr.sup.3+ and the sensitizer Yb.sup.3+ successfully entered into the crystal lattice. Further, the crystal of the phosphor belongs to the triclinic system, and the space group is P-1 (2).

[0109] As shown in FIG. 8, when excited by the excitation light of 460 nm, the emission spectrum of the phosphor La.sub.2.97Ga.sub.0.99Ge.sub.5O.sub.16: 0.03Yb.sup.3+, 0.01Cr.sup.3+ covers a spectral range of 600-1100 nm, especially a spectral range of 650-1050 nm.

[0110] Based on the above test and characterization results, considering the ionic radius and valence state, it can be determined that Cr.sup.3+ replaces Ga.sup.3+ on the original site in the matrix lattice. Similarly, the co-doped Yb.sup.3+ replaces La.sup.3+ on the original site in the matrix lattice.

EXAMPLE 4

[0111] The present example provides a set of phosphors having a general formula of La.sub.3(1x)Ga.sub.1yGe.sub.5O.sub.16: 3xA.sup.3+, yCr.sup.3+,where 0<3x custom-character 0.3, y=0.07, and A represents Gd, the chemical formulae of the set of phosphors are as follows, and reference may be made to Example 2 for the corresponding preparing method:

[0112] La.sub.2.985Ga.sub.0.93Ge.sub.5O.sub.16: 0.015Gd.sup.3+, 0.07Cr.sup.3+

[0113] La.sub.2.97Ga.sub.0.93Ge.sub.5O.sub.16: 0.03Gd.sup.3+, 0.07Cr.sup.3+

[0114] La.sub.2.955Ga.sub.0.93Ge.sub.5O.sub.16: 0.045Gd.sup.3+, 0.07Cr.sup.3+

[0115] La.sub.2.94Ga.sub.0.93Ge.sub.5O.sub.16: 0.06Gd.sup.3+, 0.07Cr.sup.3+

[0116] La.sub.2.91Ga.sub.0.93Ge.sub.5O.sub.16: 0.09Gd.sup.3+, 0.07Cr.sup.3+

[0117] La.sub.2.85Ga.sub.0.93Ge.sub.5O.sub.16: 0.15Gd.sup.3+, 0.07Cr.sup.3+

[0118] La.sub.2.79Ga.sub.0.93Ge.sub.5O.sub.16: 0.21Gd.sup.3+, 0.07Cr.sup.3+

[0119] FIG. 9 is the X-ray diffraction spectrum of the phosphor La.sub.2.97Ga.sub.0.93Ge.sub.5O.sub.16: 0.03Gd.sup.3+, 0.07Cr.sup.3+, and XRD diffraction spectrums of other phosphors are similar to those in FIG. 9. As shown in FIG. 9, the X-ray diffraction spectrums of the phosphors are compared with the standard X-ray diffraction spectrum. All the diffraction peaks of the phosphors are consistent with the standard spectrum JCPDS 890211 (ICSD-50521), and no impurity peak is observed, indicating that the activator Cr.sup.3+ and the Gd.sup.3+ successfully entered into the crystal lattice. Further, the crystals of the set of phosphors belong to the triclinic system, and the space group is P-1 (2).

[0120] FIG. 10 is the photoluminescence emission spectrum of the phosphor La.sub.2.97Ga.sub.0.93Ge.sub.5O.sub.16: 0.03Gd.sup.3+, 0.07Cr.sup.3+. Photoluminescence emission spectrums of other phosphors are similar to those in FIG. 10. As shown in FIG. 10, when excited by the excitation light of 450 nm, the emission spectrum of the phosphor covers a range of 600-1100 nm, especially a range of 650-1050 nm.

[0121] Based on the above test and characterization results, considering the ionic radius and valence state, it can be determined that the incorporation of Cr.sup.3+ replaces Ga.sup.3+ on the original site in the matrix lattice. Similarly, the incorporation of co-doped Gd.sup.3+ replaces La.sup.3+ on the original site in the matrix lattice.

EXAMPLE 5

[0122] The present example provides a phosphor having a molecular formula of La.sub.2.97Ga.sub.0.93Ge.sub.4.95O.sub.16: 0.03Gd.sup.3+, 0.07Cr.sup.3+, 0.05Sn.sup.4+. The preparing method of the phosphor is as follows:

[0123] According to a stoichiometric ratio in the molecular formula of the phosphor, accurately weighing the raw materials La.sub.2O.sub.3, Ga.sub.2O.sub.3, GeO.sub.2, Gd.sub.2O.sub.3, Cr.sub.2O.sub.3 and SnO.sub.2, and placing the weighed raw materials into an agate mortar to grind for evenly mixing; then transferring the resulting mixture to an alumina crucible; placing in a muffle furnace and sintering in an air atmosphere; controlling the temperature at about 1250 C. to sinter for about 5 hours; and after cooling with the furnace, grinding into powders to obtain the phosphor.

[0124] As shown in FIG. 9, the X-ray diffraction spectrums of the phosphors are compared with the standard X-ray diffraction spectrum. All the diffraction peaks of the phosphor are consistent with the standard spectrum JCPDS 890211 (ICSD-50521) and no impurity peak is observed, indicating that the activator Cr.sup.3+, the sensitizers Gd.sup.3+ and Sn.sup.4+ successfully entered into the crystal lattice. Further, the crystal of the phosphor belongs to the triclinic system, and the space group is P-1 (2).

[0125] As shown in FIG. 11, when excited by the excitation light of 450 nm, the emission spectrum of the phosphor covers a spectral range of 600-1100 nm, especially a spectral range of 650-1050 nm.

[0126] Based on the above test and characterization results, considering the ionic radius and valence state, it can be determined that the incorporation of Cr.sup.3+ replaces Ga.sup.3+ on the original site in the matrix lattice. Similarly, the incorporation of co-doped Gd.sup.3+ and Sn.sup.4+ replaces La.sup.3+ and Ge.sup.4+ on the original sites in the matrix lattice, respectively.

EXAMPLE 6

[0127] This example provides an optoelectronic component. As shown in FIG. 12, the optoelectronic component 1 includes a housing 6 provided with a recess 8, a semiconductor chip 2 for emitting a primary radiation, and a first lead 4 and a second lead 5 respectively connected to the a housing 6. An inner side wall of the recess 8 is coated with a suitable material to reflect the emitted light with the assistance of a reflector cup 7; the semiconductor chip 2 is mounted in the recess 8 and is respectively connected to the first lead 4 and the second lead 5 which are opaque;; a conversion unit 3 is mounted on an optical path of the primary radiation emitted from the semiconductor chip 2. The conversion unit 3 contains or is provided with the phosphor according to Examples 1-5 described above. Specifically, the phosphor is dispersed in the epoxy resin, and the conversion unit 3 is produced and dispersed outside the semiconductor chip 2 to absorb the primary radiation emitted from the semiconductor chip 2 and convert into a secondary radiation.

[0128] The basic parameters of the above optoelectronic component 1 are shown in Table 1; under these basic parameters, the measurement results of the radiant flux obtained when part of the phosphors in Examples 1-5 is used for the conversion unit 3 are shown in Table 2.

TABLE-US-00001 TABLE 1 LED Phosphor packaging Silicone content in the bracket LED chip specifications encapsulant conversion unit PPA3535 Size: 40 mil * 40 mil 1.4 Silicone 50 wt % Luminescence wavelength: 450-452.5 nm Power: 109.7 mW

TABLE-US-00002 TABLE 2 Radiant flux Phosphor chemical Total Radiant flux ( = formula radiant flux ( = 372-650 nm) 650-1050 nm) La.sub.3Ga.sub.0.99Ge.sub.5O.sub.16: 344.2 mW 326.8 mW 17.6 mW 0.01Cr.sup.3+ La.sub.2.97Ga.sub.0.99Ge.sub.5O.sub.16: 581.5 mW 558.8 mW 25.7 mW 0.03Gd.sup.3+, 0.01Cr.sup.3+ La.sub.2.97Ga.sub.0.99Ge.sub.5O.sub.16: 295.1 mW 286.0 mW 9.1 mW 0.03Yb.sup.3+, 0.01Cr.sup.3+ La.sub.3Ga.sub.0.93Ge.sub.5O.sub.16: 366.2 mW 323.1 mW 43.1 mW 0.07Cr.sup.3+ La.sub.2.97Ga.sub.0.93Ge.sub.5O.sub.16: 307.8 mW 251.5 mW 56.3 mW 0.07Cr.sup.3+, 0.03Gd.sup.3+ La.sub.2.67Ga.sub.0.93Ge.sub.4.95O.sub.16: 284.0 mW 218.8 mW 65.2 mW 0.07Cr.sup.3+, 0.03Gd.sup.3+, 0.05Sn.sup.4+

[0129] As can be seen from Table 2, the phosphor provided in the present application has a radiant flux of 4-70 mW in the wavelength range of 650-1050 nm and thus has a high radiant flux.

Experimental Example 1

[0130] The present experimental example aims to investigate the effects of different doping concentrations of Cr.sup.3+ on the radiant flux. Taking the phosphor having the general formula of La.sub.3Ga.sub.1yGe.sub.5O.sub.16: yCr.sup.3+ (0<y custom-character 0.1)as an example, the basic parameters of the optoelectronic component used for testing are shown in Table 1; the doping concentration of Cr.sup.3+ and the corresponding radiant flux are shown in Table 3; the photoluminescence emission spectrums of phosphors with different doping concentrations of Cr.sup.3+ are shown in FIG. 13; and a graph showing the relationship between the doping concentration of Cr.sup.3+ and the radiant flux (the wavelength range is 650-1050 nm) is shown in FIG. 14.

TABLE-US-00003 TABLE 3 Doping Radiant flux Phosphor chemical formula concentration - Cr.sup.3+ ( = 650-1050 nm) La.sub.3Ga.sub.0.995Ge.sub.5O.sub.16: 0.005Cr.sup.3+ 0.5% 9.1 mW La.sub.3Ga.sub.0.99Ge.sub.5O.sub.16: 0.01Cr.sup.3+ 1% 17.6 mW La.sub.3Ga.sub.0.97Ge.sub.5O.sub.16: 0.03Cr.sup.3+ 3% 31.0 mW La.sub.3Ga.sub.0.95Ge.sub.5O.sub.16: 0.05Cr.sup.3+ 5% 34.1 mW La.sub.3Ga.sub.0.93Ge.sub.5O.sub.16: 0.07Cr.sup.3+ 7% 43.1 mW La.sub.3Ga.sub.0.91Ge.sub.5O.sub.16: 0.09Cr.sup.3+ 9% 38.6 mW La.sub.3Ga.sub.0.89Ge.sub.5O.sub.16: 0.11Cr.sup.3+ 11% 30.3 mW La.sub.3Ga.sub.0.87Ge.sub.5O.sub.16: 0.13Cr.sup.3+ 13% 28.6 mW

[0131] As can be seen from Table 3 and FIG. 13-FIG. 14, in the phosphor La.sub.3Ga.sub.1yGe.sub.5O.sub.16: yCr.sup.3+ (0<y custom-character 0.1), when the doping concentration of Cr.sup.3+ is not less than 0.5%, the radiant flux is higher than 9.0 mW; when the doping concentration of Cr.sup.3+ is increased to 3.0%-11%, the radiant flux is higher than 30 mW. Moreover, as the doping concentration of Cr.sup.3+ increases, the radiant flux first increases to the peak value accordingly and then decreases. When the doping concentration of Cr.sup.3+ is about 7% (the corresponding phosphor is La.sub.3Ga.sub.0.93Ge.sub.5O.sub.16: 0.07Cr.sup.3+), the radiant flux reaches the highest of 43.1 mW.

Experimental Example 2

[0132] The present experimental example aims to investigate the effects of different doping concentrations of Gd.sup.3+ on the radiant flux Taking the phosphor having the general formula of La.sub.3(1x)Ga.sub.1yGe.sub.5O.sub.16: 3xGd.sup.3+: yCr.sup.3+ (0<3x custom-character 0.3, y=0.07) as an example, the basic parameters of the optoelectronic component used for testing are shown in Table 1; the doping concentration of Gd.sup.3+ and the corresponding radiant flux are shown in Table 4; the photoluminescence emission spectrums of the phosphors with different doping concentrations of Gd.sup.3+ are shown in FIG. 15; and a graph showing the relationship between the doping concentration of Gd.sup.3+ and the radiant flux (the wavelength range is 650-1050 nm) is shown in FIG. 16.

TABLE-US-00004 TABLE 4 Radiant flux Doping ( = concentration - 650-1050 Phosphor chemical formula Gd.sup.3+ nm) La.sub.2.985Ga.sub.0.93Ge.sub.5O.sub.16: 0.015Gd.sup.3+: 0.07Cr.sup.3+ 0.5% 51.0 mW La.sub.2.97Ga.sub.0.93Ge.sub.5O.sub.16: 0.03Gd.sup.3+: 0.07Cr.sup.3+ 1.0% 56.3 mW La.sub.2.955Ga.sub.0.93Ge.sub.5O.sub.16: 0.045Gd.sup.3+: 0.07Cr.sup.3+ 1.5% 55.6 mW La.sub.2.94Ga.sub.0.93Ge.sub.5O.sub.16: 0.06Gd.sup.3+: 0.07Cr.sup.3+ 2.0% 44.7 mW La.sub.2.91Ga.sub.0.93Ge.sub.5O.sub.16: 0.09Gd.sup.3+: 0.07Cr.sup.3+ 3.0% 42.2 mW La.sub.2.85Ga.sub.0.93Ge.sub.5O.sub.16: 0.15Gd.sup.3+ 0.07Cr.sup.3+ 5.0% 32.7 mW La.sub.2.94Ga.sub.0.93Ge.sub.5O.sub.16: 0.21Gd.sup.3+: 0.07Cr.sup.3+ 7.0% 25.6 mW

[0133] As can be seen from Table 4 and FIG. 15-FIG. 16, in the phosphor La.sub.3(1x)Ga.sub.1yGe.sub.5O.sub.16: 3xGd.sup.3+: yCr.sup.3+, when the doping concentration of Gd.sup.3+ is 0.5%-5%, the radiant flux is greater than 30 mW; when the doping concentration of Gd.sup.3+ is 0.5%-1.5%, the radiant flux is even greater than 50 mW. Moreover, as the doping concentration of Gd.sup.3+ increases, the radiant flux first increases to the peak value accordingly and then decreases. When the doping concentration of Gd.sup.3+ is about 1% (the corresponding phosphor is La.sub.2.97Ga.sub.0.93Ge.sub.5O.sub.16: 0.03Gd.sup.3+: 0.07Cr.sup.3+), the radiant flux reaches the highest of 56.3 mW.

Experimental Example 3

[0134] This experimental example aims to investigate the effects of different doping concentrations of Sn.sup.4+ on the radiant flux. Taking the phosphor having the general formula of La.sub.3(1x)Ga.sub.1yGe.sub.5(1z)O.sub.16: 3xGd.sup.3+, yCr.sup.3+, 5zSn.sup.4+ (3x=0.03, y=0.01, 0<5z custom-character 0.2) as an example, the basic parameters of the optoelectronic component used for testing are shown in Table 1; the doping concentration of Sn.sup.4+and the corresponding radiant flux are shown in Table 5; the photoluminescence emission spectrums of phosphors with different doping concentrations of Sn.sup.4+ are shown in FIG. 17; and a graph showing the relationship between the doping concentration of Sn.sup.4+ and the radiant flux (the wavelength range is 650-1050 nm) is shown in FIG. 18.

TABLE-US-00005 TABLE 5 Doping concen- Radiant flux tration - ( = Phosphor chemical formula Sn.sup.4+ 650-1050 nm) La.sub.2.97Ga.sub.0.99Ge.sub.4.975O.sub.16: 0.03Gd.sup.3+: 0.01Cr.sup.3+: 0.5% 47.0 mW 0.025Sn.sup.4+ La.sub.2.97Ga.sub.0.99Ge.sub.4.95O.sub.16: 0.03Gd.sup.3+: 0.01Cr.sup.3+: 1.0% 65.2 mW 0.05Sn.sup.4+ La.sub.2.97Ga.sub.0.99Ge.sub.4.925O.sub.16: 0.03Gd.sup.3+: 0.01Cr.sup.3+: 1.5% 50.3 mW 0.075Sn.sup.4+ La.sub.2.97Ga.sub.0.99Ge.sub.4.9O.sub.16: 0.03Gd.sup.3+: 0.01Cr.sup.3+: 2.0% 41.5 mW 0.1Sn.sup.4+ La.sub.2.97Ga.sub.0.99Ge.sub.4.85O.sub.16: 0.03Gd.sup.3+: 0.01Cr.sup.3+: 3.0% 40.9 mW 0.15Sn.sup.4+

[0135] As can be seen from Table 5 and FIG. 17-FIG. 18, in the phosphor La.sub.3(1x)Ga.sub.1yGe.sub.5(1z)O.sub.16: 3xGd.sup.3+, yCr.sup.3+, 5zSn.sup.4+, when the doping concentration of Sn.sup.4+is greater than or equal to 0.5%, the radiant flux is greater than 40 mW. Moreover, as the doping concentration of Sn.sup.4+ increases, the radiant flux first increases to the peak value accordingly and then decreases. When the doping concentration of Sn.sup.4+ is about 1% (the corresponding phosphor is La.sub.2.97Ga.sub.0.99Ge.sub.4.95O.sub.16: 0.03Gd.sup.3+: 0.01Cr.sup.3+: 0.05Sn.sup.4+), the radiant flux reaches the highest of 65.2 mW.

Comparative Example 1

[0136] The present comparative example provides a phosphor having a chemical formula of La.sub.3Ga.sub.4.95GeO.sub.14: 0.05Cr.sup.3+ (the doping concentration of Cr.sup.3+ is 1%), a comparison between the radiant flux of the phosphor and that of La.sub.3Ga.sub.0.99Ge.sub.5O.sub.16: 0.01Cr.sup.3+ is shown in Table 6; FIG. 19 is the photoluminescence emission spectrum of the above two phosphors. As shown in Table 6 and with reference to FIG. 19, in both the visible range of 372-650 nm and the red visible and near-infrared range of 650-1050 nm, the radiant flux of La.sub.3Ga.sub.4.95GeO.sub.14: 0.05Cr.sup.3+ is significantly smaller than the radiant flux of La.sub.3Ga.sub.0.99Ge.sub.5O.sub.16: 0.01Cr.sup.3+, indicating that the phosphor provided in the present application is far superior to the conventional phosphors.

TABLE-US-00006 TABLE 6 Phosphor Total Radiant flux Radiant flux chemical formula radiant flux ( = 372-650 nm) ( = 650-1050 nm) La.sub.3Ga.sub.4.95GeO.sub.14: 195.6 mW 184.5 mW 10.1 mW 0.05Cr.sup.3+ La.sub.3Ga.sub.0.99Ge.sub.5O.sub.16: 344.2 mW 326.8 mW 17.6 mW 0.01Cr.sup.3+

EXAMPLE 7

[0137] The present example provides a set of phosphors having the general formula of La.sub.3Ga.sub.5(1x)Ge.sub.1yO.sub.14: 5xCr.sup.3+, ySn.sup.4+, where 0<x<0.1, y=0. The chemical formulae of the set of phosphors are as follows:

[0138] La.sub.3Ga.sub.4.95GeO.sub.14: 0.05Cr.sup.3+

[0139] La.sub.3Ga.sub.4.75GeO.sub.14: 0.25Cr.sup.3+

[0140] La.sub.3Ga.sub.4.55GeO.sub.14: 0.45Cr.sup.3+

[0141] The preparing method of the set of phosphor is as follows: according to stoichiometric ratios in the molecular formulae of the set of phosphors, accurately weighing the raw materials La.sub.2O.sub.3, Ga.sub.2O.sub.3, GeO.sub.2 and Cr.sub.2O.sub.3; placing the weighed raw materials in an agate mortar to grind for evenly mixing; then transferring the resulting mixture to an alumina crucible; placing in a tubular furnace and sintering in an air atmosphere; controlling the temperature at about 1300 C. to sinter for about 5 hours; and after cooling in the furnace, grinding into powders to obtain the phosphor.

[0142] As shown in FIG. 20, the XRD diffraction spectrums of the set of phosphors are compared with the standard spectrum JCPDS 722464 (ICSD-20783). The diffraction peaks of the set of phosphors are consistent with the standard spectrum and no impurity peak is detected, indicating that the activator Cr.sup.3+ and the sensitizer Sn.sup.4+ successfully entered into the crystal lattice. The crystals of the set of phosphors belong to the triclinic system, and the space group is P-1(2).

[0143] As shown in FIG. 21, when excited by the excitation light of 460 nm, the emission spectrum of the set of phosphors cover a range of 600-1250 nm, especially a range of 650-1050 nm.

EXAMPLE 8

[0144] The present example provides a set of phosphors having the general formula of La.sub.3Ga.sub.5(1x)Ge.sub.1yO.sub.14: 5xCr.sup.3+, ySn.sup.4+, where x=0.01, 0<y custom-character 0.9. The chemical formulae of the set of phosphors are as follows:

[0145] La.sub.3Ga.sub.4.95Ge.sub.0.9O.sub.14: 0.05Cr.sup.3+, 0.1Sn.sup.4+;

[0146] La.sub.3Ga.sub.4.95Ge.sub.0.7O.sub.14: 0.05Cr.sup.3+, 0.3Sn.sup.4+;

[0147] La.sub.3Ga.sub.4.95Ge.sub.0.5O.sub.14: 0.05Cr.sup.3+, 0.5Sn.sup.4+.

[0148] The preparing method of the set of phosphors is as follows: according to stoichiometric ratios in the molecular formulae of the set of phosphors, accurately weighing the raw materials La.sub.2O.sub.3, Ga.sub.2O.sub.3, GeO.sub.2, SnO.sub.2 and Cr.sub.2O.sub.3; and placing the weighed raw materials in an agate mortar to grind for evenly mixing; then transferring the resulting mixture to an alumina crucible; placing in a muffle furnace and sintering in an air atmosphere; controlling the temperature at about 1250 C. to sinter for about 5 hours; and after cooling in the furnace, grinding into powders to obtain the phosphor.

[0149] As shown in FIG. 11-FIG. 24, the X-ray diffraction spectrums of the set of phosphors are compared with the standard X-ray diffraction spectrum. All the diffraction peaks of the set of phosphors are consistent with the standard spectrum JCPDS 722464 (ICSD-20783) and no impurity peak is detected, indicating that the activator Cr.sup.3+ and the sensitizer Sn.sup.4+ successfully entered into the crystal lattice. Further, the crystals of the set of phosphors belong to the triclinic system, and the space group is P-1(2).

[0150] As shown in FIG. 25-FIG. 27, when excited by the excitation light of 460 nm, the emission spectrums of the set of phosphors cover a range of 600-1100 nm, especially a range of 650-1050 nm.

EXAMPLE 9

[0151] The present example provides an optoelectronic component. As shown in FIG. 28, the optoelectronic component includes a housing 11 provided with a recess 16, a semiconductor chip 12 for emitting a primary radiation, and a first lead 14 and a second lead 15 respectively connected to thea housing 11. An inner side wall of the recess 16 is coated with a suitable material to achieve a selective reflection of light; the semiconductor chip 12 is mounted in the recess 16 and is respectively connected to the first lead 14 and the second lead 15 which are opaque. a conversion unit 13 is mounted on an optical path of the primary radiation emitted from the semiconductor chip 12. The conversion unit 13 contains or is provided with the phosphor according to Example 7 described above. Specifically, the phosphor is dispersed in the epoxy resin, and the conversion unit 13 is produced and dispersed outside the semiconductor chip 12 to absorb the primary radiation emitted from the semiconductor chip 12 and converted into a secondary radiation.

[0152] The basic parameters of the above optoelectronic component are shown in Table 7; under these basic parameters, the measurement results of the radiant flux obtained when part of the phosphors provided in Example 7 is used for the conversion unit 13 are shown in Table 8. The measurement results of the radiant flux obtained when part of the phosphors provided in Example 8 is used for the conversion unit 13 are shown in Table 9.

TABLE-US-00007 TABLE 7 LED Phosphor packaging Silicone content in the bracket LED chip specifications encapsulant conversion unit PPA3535 Size: 40 mil * 40 mil 1.4 Silicone 50 wt % Luminescence wavelength: 450-452.5 nm Power: 109.7 mW

TABLE-US-00008 TABLE 8 Doping concentration - Radiant flux Phosphor chemical formula Cr.sup.3+ ( = 650-1050 nm) La.sub.3Ga.sub.4.95GeO.sub.14: 0.05Cr.sup.3+ 1% 10.5 mW La.sub.3Ga.sub.4.75GeO.sub.14: 0.25Cr.sup.3+ 5% 7.8 mW La.sub.3Ga.sub.4.55GeO.sub.14: 0.45Cr.sup.3+ 9% 4.7 mW

[0153] As shown in Table 8, as the doping concentration of Cr.sup.3+ is gradually increased, the radiant flux is correspondingly decreased, but when the doping concentration of Cr.sup.3+ is 9%, the radiant flux corresponding to the phosphor is still greater than 4 mW.

TABLE-US-00009 TABLE 9 Total Phosphor chemical radiant Radiant flux Radiant flux formula flux ( = 372-650 nm) ( = 650-1050 nm) La.sub.3Ga.sub.4.95Ge.sub.0.9O.sub.14: 150.6 mW 135.8 mW 14.8 mW 0.05Cr.sup.3+, 0.1Sn.sup.4+ La.sub.3Ga.sub.4.95Ge.sub.0.7O.sub.14: 125.3 mW 111.5 mW 13.8 mW 0.05Cr.sup.3+, 0.3Sn.sup.4+ La.sub.3Ga.sub.4.95Ge.sub.0.5O.sub.14: 157.9 mW 143.6 mW 14.3 mW 0.05Cr.sup.3+, 0.5Sn.sup.4+

[0154] Finally, it should be noted that the above examples are only used to illustrate the technical solutions of the present application, rather than limiting the present application; a person skilled in the art may still modify the technical solutions described in the foregoing examples, or make equivalent replacements to some or all of the technical features therein. However, these modifications or replacements do not make the essence of corresponding technical solutions depart from the scope of the technical solutions in the examples of the present application, but should fall into the scope of the claims and specification of the present application.

PHOSPHOR, METHOD FOR PREPARING PHOSPHOR, OPTOELECTRONIC COMPONENT, AND METHOD FOR PRODUCING OPTOELECTRONIC COMPONENT

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