CHARGE CARRIER GENERATION SOURCE

Abstract

A carrier generation source is provided, comprising a carrier generation area configured to provide carriers and a grid electrode, the grid electrode comprising an electrically conductive carrier, the carrier having a first side and a second side opposite the first side, the first side being directly adjacent the carrier generation area, the carrier having a plurality of through-holes extending from the first side through the carrier to the second side, the through-holes on the first side each having a first opening surface and the through-holes on the second side having a second opening surface, the first opening surface being larger than the second opening surface.

Claims

1. Charge carrier generation source (100), comprising a carrier generation area (120) configured to provide charge carriers; and a grid electrode (106), the grid electrode (106) comprising an electrically conductive carrier, the carrier having a first side and a second side opposite the first side, the first side being directly adjacent to the carrier generation area (120), wherein the carrier has a plurality of through-holes (116) extending from the first side through the carrier to the second side, wherein the through-holes (116) each have a first opening surface on the first side and the through-holes (116) each have a second opening surface on the second side, wherein the first opening surface is larger than the second opening surface.

2. Charge carrier generation source (100) according to claim 1, wherein the through-holes (116) are configured such that a usage of the cross-sectional area of the through-holes (116) through the carrier adjusts wearing of the grid electrode (106).

3. Charge carrier generation source (100) according to claim 1 or 2, wherein the through-holes (116) have a shape tapering from the first side to the second side.

4. Charge carrier generation source (100) according to claims 1 to 3, wherein the through-holes (116) have a conical shape.

5. Charge carrier generation source (100) according to any one of claims 1 to 3, wherein the first opening surface and/or the second opening surface have a circular shape or a substantially circular shape.

6. Charge carrier generation source (100) according to any one of claims 1 to 5, further comprising: a carrier generation device configured to generate a carrier plasma in the carrier generation area (120).

7. Charge carrier generation source (100) according to any one of claims 1 to 6, further comprising: a control device configured to form an electrical potential at the grid electrode (106).

8. Charge carrier generation source (100) according to any one of claims 1 to 7, further comprising: a control device configured to control a carrier flow from the carrier generation area (120) through the through-holes (116).

9. Charge carrier generation source (100) according to any one of claims 1 to 8, wherein the grid electrode (106) is a first grid electrode (106) and the charge carrier generation source (100) further comprises a second grid electrode (104), the second grid electrode (104) being spaced apart (I.sub.g) from the second side of the first grid electrode (106), the second grid electrode (104) comprising one or a plurality of through-holes (114).

10. Charge carrier generation source (100) according to claim 9, wherein the through-holes (114) of the second grid electrode (104) are arranged relative to the through-holes (116) of the first grid electrode (106) such that carriers from the carrier generation area (120) pass through the through-holes (116) of the first grid electrode (106) and through the through-holes (114) of the second grid electrode (104).

11. Charge carrier generation source (100) according to any one of claim 9 or 10, further comprising: a control device configured to apply a first electrical potential to the first grid electrode (106) and to apply a second potential, different from the first, to the second grid electrode (106).

12. Charge carrier generation source (100) according to any one of claims 1 to 11, wherein the plurality of through-holes is a first plurality of through-holes (402) and the carrier comprising a second plurality of through-holes (404, 406, 408, 410), the through-holes (404, 406, 408, 410) of the second plurality extending from the first side through the carrier to the second side, wherein the through-holes (404, 406, 408, 410) of the second plurality each have a third opening surface at the first side and the through-holes (404, 406, 408, 410) of the second plurality have a fourth opening surface at the second side, wherein the third opening surface is larger than the fourth opening surface, and wherein the first opening surface is different from the third opening surface and/or wherein the second opening surface is different from the fourth opening surface.

13. Charge carrier generation source (100) according to claim 12, further comprising: wherein the through-holes (402) of the first plurality and the through-holes (404, 406, 408, 410) of the second plurality are concentric with each other.

14. Charge carrier generation source (100) according to any one of claims 1 to 11, further comprising: a plurality of pluralities (402, 404, 406, 408, 410) of through-holes, the pluralities comprising mutually different opening surfaces on the first side and the second side.

Description

[0025] In the following detailed description, reference is made to the accompanying drawings which form part thereof and in which are shown, for illustrative purposes, specific embodiments in which the invention may be practiced. In this regard, directional terminology such as “top,” “bottom,” “front,” “back,” “frontwards,” “rearwards,” etc. is used with reference to the orientation of the figure(s) described. Since components of embodiments may be positioned in a number of different orientations, the directional terminology is for illustrative purposes and is not limiting in any way. It is understood that other embodiments may be used and structural or logical changes may be made without departing from the scope of protection of the present invention. It is understood that the features of the various exemplary embodiments described herein may be combined, unless otherwise specifically indicated. Therefore, the following detailed description is not to be construed in a limiting sense, and the scope of protection of the present invention is defined by the appended claims.

[0026] In the context of this description, the terms “connected,” “attached” as well as “coupled” are used to describe both a direct and an indirect connection, a direct or indirect connection as well as a direct or indirect coupling. In the figures, identical or similar elements are given identical reference signs where appropriate.

[0027] FIG. 2A and FIG. 2B schematically illustrate a charge carrier generation source 100 according to various embodiments. The charge carrier generation source 100 may include a charge carrier generation device. The carrier generation device is configured to generate a carrier plasma in the carrier generation area 120, The charge carrier plasma is illustrated in FIG. 2A and FIG. 2B by means of the plasma boundary 108.

[0028] Such a charge carrier generation source 100 is suitable, for example, for processing the surface of a substrate by means of a charge carrier beam. The charge carrier generation source 100 is configured, for example, to emit a charge carrier beam that impinges on a region (also referred to as an impingement region) of the surface of the substrate. The charge carrier generation source 100 is configured to process the surface of the substrate with a charge carrier beam, such as ablating a material of the substrate or depositing a material on the surface of the substrate. According to one embodiment, the charge carrier generation source 100 is an ion beam source and the charge carrier beam is, for example, a focusing ion beam having a Gaussian-shaped charge current distribution density. In this example, the ion beam is used to ablate a thin film from a substrate. The ion beam source may be configured as a wide beam ion beam source.

[0029] The carrier generation source 100 includes a carrier generation area 120. The carrier generation area 120 is configured to provide charge carriers. Charge carriers are, for example, ions or electrons.

[0030] The charge carrier generation source 100 further comprises a first electrode 106. The first electrode 106 is also referred to as a grid electrode 106, a plasma electrode 106, or a screen electrode 106.

[0031] The grid electrode 106 includes an electrically conductive carrier. The carrier has a first side and a second side opposite the first side. The first side is directly adjacent to the carrier generation area 120, such as the plasma boundary 108.

[0032] The carrier includes a plurality of through-holes 116. The through-holes 116 extend from the first side through the carrier to the second side. The through-holes 116 each have a first opening surface at the first side (illustrated in FIG. 2A by means of the diameter d.sub.s1), and the through-holes 116 each have a second opening surface at the second side (illustrated in FIG. 2A by means of the diameter d.sub.s2). The first opening surface is larger than the second opening surface.

[0033] The grid electrode 116 has a thickness t.sub.s. The grid electrode 116 is configured such that the diameter d.sub.s of the opening or the opening surface of the opening at the first side of the carrier is a function of the thickness t.sub.s of the carrier, where the thickness t.sub.s is a function of time t due to wearing (d.sub.s1=f(t.sub.s (t))), as illustrated in FIG. 2B.

[0034] A second electrode 104 having through-holes 114 corresponding to through-holes 116 of the grid electrode 106 is disposed at a distance I.sub.g from the grid electrode 106. The distance I.sub.e1, I.sub.e2 of the plasma boundary 108 to the second electrode 104 changes due to the wearing of the first electrode 106 (I.sub.e1>I.sub.e2 and d.sub.s1>d.sub.s3). In other words, by decreasing the thickness t.sub.s of the first electrode due to wearing, the plasma boundary 108 shifts towards the second electrode 104.

[0035] The second electrode 104 may be a second grid electrode 104. The second grid electrode 104 may be spaced I.sub.g from the second side of the first grid electrode 106. The second grid electrode 104 may include one through-hole 114 or a plurality of through-holes 114. The through-holes 114 of the second grid electrode 104 may be arranged relative to the through-holes 116 of the first grid electrode 106 such that carriers from the carrier generation area 120 pass through the through-holes 116 of the first grid electrode 106 and through the through-holes 114 of the second grid electrode 104.

[0036] The through-holes are configured such that the change in the cross-sectional area of the through-hole in the carrier is configured such that when the thickness of the carrier decreases (illustratively a shift of the first side towards the second side) from the first side, there is an “independent” reduction in the opening surface of the through-hole at the first side of the carrier. Thus, a drift of the carrier extraction current may be compensated. If the through-holes are optimally designed for wearing, active control of the charge carrier extraction flow is no longer necessary. Alternatively, the control effort is reduced. Thus, a constant or substantially constant carrier current may be effectuated by reducing the opening surface on the first side of the carrier as the thickness t.sub.s of the carrier reduces over time.

[0037] The following relationships are to be taken into account:

[00001]$\begin{array}{cc}{J}_{\max }=\frac{4.Math.{\epsilon }_0}{9}\sqrt{\frac{2.Math.e}{M}}\frac{V_t^{\frac{3}{2}}}{l_e^2}& \left(1\right)\end{array}$$\begin{array}{cc}{I}_{\max }=J_{\max }.Math.\frac{\pi }{4}{d}_s^2& \left(2\right)\end{array}$

[0038] with l.sub.e as the distance of the second electrode to the plasma boundary, where I.sub.g is given by the thickness t.sub.s of the first electrode and the distance between the first electrode and the second electrode, e as the charge of the electron, ϵ.sub.0 the vacuum permittivity, j.sub.max the space charge-limited carrier current per through-hole, and d.sub.s the diameter of the through-hole, V.sub.t the voltage at the grid electrode, and M the mass of the charge carrier.

[0039] For a cylindrical through-hole, the charge carrier current J.sub.max would increase with decreasing thickness t.sub.s of the first electrode, as illustrated in diagram 310 in FIG. 3A.

[0040] However, in various embodiments, the through-holes 116 have a shape that tapers from the first side to the second side. In various embodiments, the through-holes 116 may have a conical shape. For example, the first opening surface and/or the second opening surface may have a circular shape or a substantially circular shape. For example, the through-hole may be configured to have, for example, such cross-sectional variation (d.sub.s (t.sub.s)) as to accurately or substantially accurately compensate for the wear-induced displacement of the charge carrier flow. The opening surface at the first side of the carrier of the grid electrode 106 is thus reduced by wearing-induced decreasing thickness t.sub.s as illustrated in diagram 320 in FIG. 3B. As a result, a constant or substantially constant current of charge carriers per opening may be set as the thickness of the first electrode 106 decreases, as illustrated in diagram 330 in FIG. 3C.

[0041] In various embodiments, the charge carrier generation source 100 includes a control device, The control device is configured to form an electrical potential at the grid electrode 106. The control device may be further configured to control a flow of charge carriers from the carrier generation area 120 through the through-holes.

[0042] The control device may be further configured to apply a first electrical potential to the first grid electrode 106 and to apply a second potential, different from the first, to the second grid electrode 104.

[0043] The control device may be further configured to control the charge carrier beam, The control device may be configured to change, control, pause, abort, and/or readjust the parameters and characteristics of the charge carrier beam automatically or manually or with an appropriate combination. This may involve, for example, the position or the electrical operating currents for various components of the charge carrier generation source. Similarly, this control device may affect direct or indirect parameters of the charge carrier beam, such as characteristics of a beam neutralization device, composition and dose for output gases for the charge carrier generation source, and/or temperatures of various components. For example, an accelerating voltage may be changed, which affects the kinetic energy of the charged carriers in the charge carrier beam. The control device may further include and control or regulate a gas supply (not shown) or a plasma excitation (not shown) to the charge carrier generation source, such that the number of charge carriers in the charge carrier beam may be regulated. A gas supply may be generally required for carrier generation sources to maintain a carrier beam. Plasma excitation is generally required for charge carrier generation sources that are operated with charged charge carriers to generate the necessary charge carriers (e.g., ions) for a charged or non-neutral charge carrier beam from the supplied gas.

[0044] The control device may include a processor, computer, or other data processing device (hereinafter referred to as a process module computer PMC) that receives and evaluates the individual signals from the components and modules of the device and controls or regulates the same.

[0045] The PMC may be a freely programmable processor (for example, a microprocessor or a nanoprocessor), or hard-wired logic, or firmware, or for example, an application-specific integrated circuit (ASIC) or a field-programmable gate array (FPGA). Associated with the PMC is, among other things, an axis system that is connected to a carrier beam circuit and an acceleration circuit (also referred to as an accelerator circuit) by means of a switch circuit to control the beam source carrier beam and its beam profile. The charge carrier beam circuit and the accelerator circuit may each have a power supply, which may be basically technically identical to each other. The switch circuit may each have an electrically switchable switch, such as a power transistor, between the radiation source and the charge carrier beam circuit and/or between the radiation source and the accelerator circuit. The switch circuit may be configured such that the electrical potential of the charge carrier beam circuit and/or the accelerator circuit may be electrically connected to the radiation source, or alternatively, a ground potential or other electrical potential may be connected to the radiation source.

[0046] FIG. 4 illustrates a first electrode 106 of a charge carrier generation source 100 according to various embodiments. In various embodiments, the plurality of through-holes 116 may be a first plurality 402 of through-holes and the carrier may include at least a second plurality 404, 406, 408, 410 of through-holes. The through-holes of the second plurality 404, 406, 408, 410 may extend from the first side through the carrier to the second side. The through-holes of the second plurality 404, 406, 408, 410 may each have a third opening surface at the first side and the through-holes 404, 406, 408, 410 of the second plurality may have a fourth opening surface at the second side. The third opening surface may be larger than the fourth opening surface. The first opening surface may be different than the third opening surface and/or the second opening surface may be different than the fourth opening surface. The through-holes 402 of the first plurality and the through-holes 404, 406, 408, 410 of the second plurality may be concentric with each other. In various embodiments, multiple pluralities of through-holes 406, 408, 410 may be provided. The pluralities have mutually different opening surfaces on the first side and the second side of the carrier of the first electrode 106. Thus, a spatial wear profile of the first electrode 106 may be adjusted, For example, the first electrode may be configured to decrease in taper from the center of the first electrode to the edge, such as from (nearly) tapered through-hole(s) 402 at the center of the first electrode to (nearly) cylindrical through-hole(s) 410 at the edge of the first electrode, with differently shaped frustoconical through-holes 404, 406 408 laterally disposed therebetween. This enables position-independent constant charge carrier current (FIG. 3C) to be set across the surface of the first electrode. For example, in case of position-dependent wearing of the electrode. As an example, the wearing of the first electrode 106 may be more pronounced in the center than at the edge of the first electrode 106. This position-dependent wearing may be taken into account by means of position-dependent differently shaped through-holes.