Collision ionization source

Abstract

A collision ionization source is disclosed herein. An example source includes an ionization region arranged to receive a gas and a charged particle beam, the charged particle beam to ionize at least some of the gas, and a supply duct arranged to provide the gas to the ionization region, the supply duct having a non-uniform height decreasing from an input orifice to an output orifice, the output orifice arranged adjacent to the ionization region.

Claims

1. An apparatus comprising: an ionization region arranged to receive a gas and a charged particle beam, the charged particle beam to ionize at least some of the gas; and a supply duct arranged to provide the gas to the ionization region, the supply duct having a non-uniform height decreasing from an input orifice to an output orifice, the output orifice arranged adjacent to the ionization region.

2. The apparatus of claim 1, further comprising: a first plate forming a top of the supply duct and having a first aperture; and a second plate forming a bottom of the supply duct and having a second aperture, wherein the first and second apertures are aligned.

3. The apparatus of claim 2, wherein the ionization region is defined by a region between the first and second plates and coincident with the first and second apertures, and wherein the charged particle beam enters the ionization region through the first aperture.

4. The apparatus of claim 2, wherein the charged particle beam enters the ionization region through the first aperture.

5. The apparatus of claim 2, wherein ionized gas exits the ionization region through the second aperture.

6. The apparatus of claim 1, wherein the supply duct is defined by a first height region, a second height region, and a transition region arranged between the first and second height regions.

7. The apparatus of claim 6, wherein the first height region is adjacent to the input orifice and the second height region is adjacent to the output orifice.

8. The apparatus of claim 6, wherein the first height region is larger than the second height region.

9. The apparatus of claim 6, wherein the transition region has a shape selected from one of a taper, a single step, and a multiple step.

10. An apparatus comprising: a first plate including a first aperture; and a second plate including a second aperture, wherein the first and second plates are arranged with their respective apertures aligned, and to form a supply duct of non-uniform height between the first and second plates, and wherein the supply duct includes a first height region, a transition region and a second height region, the second height region arranged coincident with the first and second apertures, and the first height region separated from the second height region by the transition region, and wherein the first height region has a height that is greater than the second height region.

11. The apparatus of claim 10, wherein an ionization region is formed between the first and second apertures, the ionization region arranged to receive a charged particle beam through the first aperture to ionize at least some of a gas provided through the supply duct.

12. The apparatus of claim 11, wherein the supply duct incudes an input orifice defined by the first height region and an output orifice defined by the second height region, the supply duct to receive the gas through the input orifice and supply the ionization region the gas through the output orifice.

13. The apparatus of claim 11, wherein the ionized gas exits through the second aperture.

14. The apparatus of claim 10, wherein the transition region includes a step between the first and second height regions.

15. The apparatus of claim 10, wherein the transition region includes multiple steps between the first and second height regions.

16. The apparatus of claim 10, wherein the transition region forms a taper between the first and second height regions.

17. The apparatus of claim 10, wherein the first plate includes a sloped portion that slopes down from the first height region to the second height region, the sloped portion defining the transition region.

18. The apparatus of claim 10, the first plate includes a step change in thickness toward the second plate, the step change in thickness defining the transition region.

19. The apparatus of claim 10, further including a gas flow plug disposed between the first and second plates and disposed on a side of the first and second apertures opposite the supply duct.

20. The apparatus of claim 10, wherein an electric field is formed between the first and second plates.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1A renders a longitudinal cross-sectional view of a CPM in which an embodiment is implemented.

(2) FIG. 1B renders a magnified (longitudinal cross-sectional) view of a prior-art Nano-Aperture Ionization Source (NAIS) ion source, suitable for use in a CPM as depicted in FIG. 1A.

(3) FIG. 2 shows an embodiment (in longitudinal cross-sectional view).

(4) FIG. 3 illustrates an alternative embodiment.

(5) Like reference numerals refer to corresponding parts throughout the several views of the drawings.

DETAILED DESCRIPTION OF EMBODIMENTS

(6) As regards ion sources, various possibilities, including Liquid Metal Ion Sources (LMIS), plasma sources, photoionization sources, etc., are possible. Of specific interest in the context of embodiments is the collision ionization ion source (e.g. electron impact ionization source), in which an input beam of charged particles (such as electrons) is used to ionize molecules/atoms in a body of gas that is provided in an ionization region. To this end, the gas is introduced into a narrow gap between two oppositely-located retaining plates (sheets, membranes), one of which contains an input zone (such as an aperture, or (locally thinned) lamina/film) to admit said input beam and the other of which contains an oppositely located output zone (conventionally an aperture, but potentially a (locally thinned) lamina/film) to allow emission of a flux of ions produced in said ionization region by interaction of the input beam with the gas. Said interaction will predominantly occur in a gas space bordered on opposite sides by said plates and located between said zones.

(7) Because at least a portion of the gas in question is converted to said ion flux, there needs to be a replenishing supply of gas to said gas space, in order to realize satisfactory continuous operation of the source. In order to achieve a relatively high source brightness, the ionization region is preferably very small, so as to ensure a relatively high density of input charged particles therein; as a consequence, the whole device tends to be very small, with typical zone diameters of the order of a few microns or a few hundred nanometers, for example. For this reason, such sources can also be alluded to as Nano-Aperture Ionization Sources (NAIS), and they are typically manufactured as integrated devices using MEMS technology (MEMS=Micro Electro Mechanical Systems). For more information on NAIS devices, see, for example:

(8) U.S. Pat. No. 7,772,564, assigned to the assignee of the present invention;

(9) The doctoral thesis Development of the Nano-Aperture Ion Source (NAIS) by David Sangbom Jun, Delft University of Technology (in conjunction with the assignee of the present invention), ISBN 978-94-6186-384-3 (2014): repository.tudelft.nl/islandora/object/uuid:23a0ceae-2662-4f6a-9082-f21d1a872a39/?collection=research, both of which documents are incorporated herein by reference for all purposes.

(10) NAIS devices are advantageous in that they can be relatively easily used to generate a variety of different ion speciessimply by changing the gas administered to the ionization region. Moreover, because they are small and relatively cheap, and can be manufactured en masse using MEMS fabrication techniques, they can be easily and cheaply switched out/replaced when they reach end-of-lifetime. However, an issue up to now has been source brightness, which has tended to remain lower than calculated/simulated nominal brightness levels.

(11) It is an object of embodiments to address this issue. More specifically, it is an object of embodiments to provide an improved collision ionization ion source with an augmented source brightness relative to prior-art devices.

(12) These and other objects are achieved in a collision ionization ion source as set forth herein, characterized in that said duct comprises at least one transition region between said entrance orifice and said emergence orifice in which an inner height of said duct, measured normal to the plates, decreases from a first height value to a second height value.

(13) During extensive experimentation and analysis leading to the development of embodiments, the inventors investigated various possible causes of the disappointingly low source brightness observed in prior-art NAIS devices (in which both the input zone and output zone were tiny apertures). Intuitively, these efforts concentrated on quantum effects in the ionization space, and particularly on factors such as the available density of input charged particles therein, the energy of those charged particles, the input beam cross-section/current, etc. Eventually, after very thorough analysis, the underlying cause was found to lie in a totally unexpected direction: after performing multiple simulations and measurements, it was found that gas leakage through the (tiny) input/output apertures was having a much greater effect on the ionization region than could have been reasonably anticipated, leading to a gas pressure in the ionization region that was one or more orders of magnitude lower than expectedeven if the width of the supply channel (parallel to the plane of the inter-plate gap) was much greater than the diameter of the input/output apertures. In order to address this issue, the inventors made significant modifications to the supply duct so as to achieve a much greater gas supply rate to the ionization region, better matching the achievable flow conductance of the supply duct to the (combined) leakage conductance through the apertures; at the same time, such modifications had to (endeavor to) preserve the small dimensioning of the gas spaceparticularly the small (height) spacing between the abovementioned retaining plates so as to prevent a competing tendency toward lowered brightness due to a lowered density of input charged particles in the ionization region. The inventive architecture uses a supply duct that maintains the desired small ceiling height between the retaining plates in the ionization region, but has a relatively high ceiling height further upstream in an initial portion extending from the entrance orifice to the transition region. This increased ceiling height produces a lower length-to-height aspect ratio in said initial portion of the gas feedline, advantageously altering the so-called Knudsen number of this initial portion (the ratio of the mean free path length for (atoms/molecules in) the gas to the height of the duct), with an attendant decrease in flow resistance/drag. Accordingly, one creates a situation in which:

(14) For a given gas input pressure (at the entrance orifice), a much higher pressure can be achieved in the ionization region; or

(15) In order to achieve a particular gas pressure in the ionization region, one can now suffice with a much lower input pressure (inter alia allowing easier compliance with safety regulations).

(16) When the new supply duct configuration was tested, it was found that it resulted in a significant increase in source brightness. An embodiment of an inventive arrangement as here described is illustrated in FIG. 2, for example.

(17) The height change in the transition region of the inventive duct geometry can be realized in different ways, and may, for example, have a form selected from the group comprising:

(18) A single step;

(19) A series of steps;

(20) A tapering transition, and combinations thereof.

(21) The particular choice of shape made will depend inter alia on manufacturability considerations. For example, a single stepor series of stepscan be created using an etching procedure, such as a wet etch or sputter etch in combination with a suitable mask, or just a steered FIB/ion-assisted etching technique, for instance. A tapered (sloped portion) transition can, for example, be made by using a FIB to mill to successively different depths as a function of lateral displacement. The chosen form can potentially influence phenomena such as turbulence and dead spaces in the duct, but these have not been found to have a significant effect on the operation of the inventive ion source. The skilled artisan will be able to choose a form/manufacturing technique that best suit the particulars of a given situation.

(22) In an embodiment, a height ratio Q of said first (greater) height value to said second (lesser) height value is greater than 25, preferably greater than 50, and even more preferably greater than 75. The skilled artisan will be able to choose a value of Q according to the needs of a given situation, inter alia based on the desired increase in flow conductance through the supply duct, and on manufacturability considerations. As a non-limiting example, given for the purposes of guidance only, the inventors achieved the following results in a given test:

(23) Height h2 of supply duct at emergence orifice: 300 nm.

(24) Width of supply duct (parallel to retaining plates): 100 m.

(25) Length of supply duct (between entrance and emergence orifices): 3.3 mm.

(26) Test height h1 of supply duct at entrance orifice: 7500 nm (yielding Q 25).

(27) Increasing the duct height at the start of the supply duct in this manner (Q25) increased the flow conductance through the duct by more than three orders of magnitude (to a value of the order of about 10-10 m3/s, for helium gas at room temperature).

(28) In addition to adjusting the value of Q, there is also the option of employing more than one supply duct, if desired. For example, as an alternative to using a single duct with a large Q, one could instead use several ducts with a smaller Q; in plan view (viewed parallel to the input beam), such multiple supply ducts could converge on a centrally located gas space from different directions, analogous to two or more spokes in a wheel.

(29) It should be noted that the supply duct of the embodiments does not have to emerge directly into the aforementioned gas space. Rather, if desired, there may be a buffer chamber in the vicinity of/surrounding the gas space, and the supply duct can feed the gas space via this buffer chamber.

(30) FIG. 1A is a highly schematic depiction of an embodiment of a charged-particle focusing devicein this case a CPMin which an embodiment is implemented; more specifically, it shows an embodiment of a microscope M, which, in this case, is a FIB-SEM (though, in the context of embodiments, it could just as validly be a purely ion-based microscope, for example). The microscope M comprises a particle-optical column 1, which produces a beam 3 of charged particles (in this case, an electron beam) that propagates along a particle-optical axis 3. The particle-optical column 1 is mounted on a vacuum chamber 5, which comprises a specimen holder 7 and associated actuator(s) 7 for holding/positioning a specimen S. The vacuum chamber 5 is evacuated using vacuum pumps (not depicted). With the aid of voltage supply 17, the specimen holder 7, or at least the specimen S, may, if desired, be biased (floated) to an electrical potential with respect to ground. Also depicted is a vacuum port 5, which may be opened so as to introduce/remove items (components, specimens) to/from the interior of vacuum chamber 5. A microscope M may comprise a plurality of such vacuum ports 5, if desired.

(31) The particle-optical column 1 (in the present case) comprises an electron source 9 (such as a Schottky gun, for example) and an illuminator 2. This illuminator 2 comprises (inter alia) lenses 11, 13 to focus the (electron) beam 3 onto the specimen S, and a deflection unit 15 (to perform beam steering/scanning of the beam 3). The microscope M further comprises a controller/computer processing apparatus 25 for controlling inter alia the deflection unit 15, lenses 11, 13 and detectors 19, 21, and displaying information gathered from the detectors 19, 21 on a display unit 27.

(32) The detectors 19, 21 are chosen from a variety of possible detector types that can be used to examine different types of stimulated radiation emanating from the specimen S in response to irradiation by the (impinging) beam 3. In the apparatus depicted here, the following (non-limiting) detector choices have been made:

(33) Detector 19 is a solid state detector (such as a photodiode) that is used to detect cathodoluminescence emanating from the specimen S. It could alternatively be an X-ray detector, such as Silicon Drift Detector (SDD) or Silicon Lithium (Si(Li)) detector, for example.

(34) Detector 21 is an electron detector in the form of a Solid State Photomultiplier (SSPM) or evacuated Photomultiplier Tube (PMT) [e.g. Everhart-Thornley detector], for example. This can be used to detect backscattered and/or secondary electrons emanating from the specimen S.

(35) The skilled artisan will understand that many different types of detector can be chosen in a set-up such as that depicted, including, for example, an annular/segmented detector.

(36) By scanning the beam 3 over the specimen S, stimulated radiationcomprising, for example, X-rays, infrared/visible/ultraviolet light, secondary electrons (SEs) and/or backscattered electrons (BSEs)emanates from the specimen S. Since such stimulated radiation is position-sensitive (due to said scanning motion), the information obtained from the detectors 19, 21 will also be position-dependent. This fact allows (for example) the signal from detector 21 to be used to produce a BSE image of (at least part of) the specimen S, which image is basically a map of said signal as a function of scan-path position on the specimen S.

(37) The signals from the detectors 19, 21 pass along control lines (buses) 25, are processed by the controller/computer processing apparatus 25, and displayed on display unit 27. Such processing may include operations such as combining, integrating, subtracting, false coloring, edge enhancing, and other processing known to the skilled artisan. In addition, automated recognition processes (e.g. as used for particle analysis) may be included in such processing.

(38) In addition to the particle-optical column 1 described above, the microscope M also comprises an ion-optical column 31. In analogy to the particle (electron) optical column 1, the ion-optical column 31 comprises an ion source 39 and illuminator 32, and these produce/direct an ion beam 33 along an ion-optical axis 33. To facilitate easy access to specimen S located on specimen holder 7, the ion-optical axis 33 is canted relative to the particle (electron) optical axis 3. As hereabove described, such an ion-optical (FIB) column 31 can, for example, be used to perform processing/machining operations on the specimen S, such as incising, milling, etching, depositing, etc. Alternatively, the ion-optical column 31 can be used to produce imagery of the specimen S.

(39) As herein depicted, the CPM M makes use of a manipulator arm A, which can be actuated in various degrees of freedom by actuator system A, and can (if desired) be used to assist in transferring specimens to/from the specimen holder 7, e.g. as in the case of a so-called TEM lamella excised from the specimen S using ion beam 33.

(40) Also illustrated is a Gas Injection System (GIS) G, which can be used to effect localized injection of gases, such as etching or precursor gases, etc., for the purposes of performing gas-assisted etching or deposition. Such gases can be stored/buffered in a reservoir G, and can be administered through a narrow nozzle G, so as to emerge in the vicinity of the intersection of axes 3 and 33, for example.

(41) It should be noted that many refinements and alternatives of such a set-up will be known to the skilled artisan, such as the use of a controlled environment at the specimen S, maintaining a pressure of several mbar (as used in an Environmental SEM or low-pressure SEM).

(42) In the specific context of the current disclosure, the ion source 39 is a collision ionization ion source, a NAIS as referred to above. Such an ion source 39 is illustrated in more detail in FIG. 1B, and comprises:

(43) An input aperture (zone) A1, to admit a focused input beam B of charged particles, such as electrons (produced by a non-depicted electron source, such as a Schottky emitter, for instance).

(44) An output aperture (zone) A2, located opposite to, and aligned with, said input aperture A1, to allow emission of a flux B of ions. As here depicted, both apertures A1 and A2 have a substantially circular form with substantially the same diameter A.

(45) A gas space R, located between said input aperture A1 and output aperture A2, in which (molecules/atoms of) gas F (such as argon gas, for example) can be ionized by said input beam B so as to produce said ions B. Such ionization occurs in an ionization region R, which generally is substantially coincident or overlapping with gas space R (though region R may protrude to some extent through one or both of apertures A1, A2, for example). In the figure, the gas space R is shaded grey, whereas the ionization region R is schematically indicated using hatching.

(46) A supply duct F, for supplying a flow of said gas F to said gas space R.

(47) As herein depicted, the supply duct F is delimited by a pair of oppositely-located retaining plates P1, P2 (which, in the case of a NAIS, are thin enough to be referred to as membranes). A first plate P1 in this pair contains said input aperture A1, and the second plate P2 contains said output aperture A2, with a spacing/separation d between the plates P1, P2 which essentially defines the (uniform) height of the supply duct F. Note that a plug P3 seals off this duct on one side (the side opposite to the inward flow of gas F from the supply duct). The first plate P1 has a thickness d, and the second plate P2 will often have (approximately) the same thickness. To provide some general guidance, the following non-limiting values may apply to such a depicted ion source 39:

(48) Plate spacing d: ca. 100-500 nm.

(49) Plate thickness d: ca. 100 nm.

(50) Aperture diameter A: ca. 100-500 nm.

(51) Gas pressure in gas space R: ca. 500-750 mbar.

(52) Beam current in beam B: ca. 50-200 nA.

(53) The plates P1, P2 (and plug P3) may, for example, comprise a material such as molybdenum, platinum or tungsten. A voltage supply (not depicted) can be used to apply a (DC) voltage difference between plates P2 and P1 (e.g. ca. 1 volt), so as to bias plate P1 to a more positive potential than plate P2, thereby creating an electric field directing (positively charged) ions towards plate P2 and through aperture A2.

(54) As set forth above, this conventional design of NAIS 59 tends to suffer from sub-optimal brightness. To address this issue, the inventors modified the architecture of the supply duct F so as to achieve a structure in which the flow conductance of the supply duct F is better matched to the combined flow conductance of input aperture A1 and output aperture A2. An embodiment of such a modified structure is illustrated in FIG. 2, with reference to a Cartesian coordinate system XYZ. In this Figure, the supply duct F comprises:

(55) An entrance orifice (mouth/throat) O1, connected to a gas supply (such as a gas pump/reservoir);

(56) An emergence orifice (mouth/throat) O2, opening into gas space R (between apertures A1 and A2), where the duct F comprises three characteristic portions, namely:

(57) An initial portion/tract T1, with a relatively large height h1 measured parallel to Z forming a first height region, and comprising (progressing from) said entrance orifice O1;

(58) A final portion/tract T2, with a relatively small height h2 measured parallel to Z forming a second height region, and comprising said (progressing to) emergence orifice O2; and

(59) At least one transition region/tract T3, between said initial portion T1 and said final portion T2, in which the transition from height h1 to height h2 occurs, producing a non-uniform height between the first plate P1 and second plate P2. This height transition in region T3 can occur smoothly/continuously, in multiple steps, or in a single step change in thickness, as desired/dictated by the circumstances of a given situation. As here depicted, the height transition occurs in a tapering fashion; alternatively, FIG. 3 illustrates an inventive embodiment in which the transition occurs in a step-like fashion.

(60) In this particular embodiment, a dimensional change in the duct F only occurs in the Z direction; however, this is not limiting upon the scope of the invention, and a dimensional change (tapering or step) could alternatively/additionally occur in the Y direction, if desired. For guidance purposes, the following non-limiting values may apply:

(61) Respective lengths of portions T1, T3 and T2 (parallel to X): 15 mm, 5 m and 200 m;

(62) Respective heights of portions T1 and T2 (parallel to Z): 20 m (h1) and 200 nm (h2). This yields a height ratio Q=h1/h2=100 in this case; and

(63) Width of portions T1, T2 and T3 (parallel to Y): ca. 100-200 m.

(64) In use, a gas pressure of 500 mbar at entrance orifice O1 results in a gas pressure of 450 mbar at emergence orifice O2, for example.

(65) A structure such as this can, for example, be conveniently manufactured using a chip bonding procedure, whereby the upper half (plate P1 forming a top of the supply duct, etc.) and the lower half (plate P2 forming a bottom half of the supply duct, etc.) are manufactured on two separate substrates (or substrate portions)e.g. using etching/ablation techniquesafter which one half is inverted onto the other, aligned and bonded in position, using appropriate spacers (such as gas flow plug P3) to help create the interposed duct/channel F. The apertures A1, A2 can be created using etching/ablation, either prior to or after bondingfor example, a thin actinic (e.g. focused ion) beam can be used to radiatively drill through the bonded halves from one side, thus realizing perfect mutual alignment of the apertures. Specific examples of chip bonding techniques in the current context include direct bonding, thermocompression bonding, eutectic bonding, anodic bonding, etc.