Method for producing an optoelectronic component and an optoelectronic component

Abstract

An optoelectronic component and a method for producing an optoelectronic component are disclosed. In embodiments, the method includes A) providing an auxiliary carrier; B) applying a sacrificial layer on the auxiliary carrier; C) applying a converter layer on the sacrificial layer, which includes quantum dots embedded in a matrix material or a luminescent polymer; D) providing a semiconductor layer sequence; E) optionally applying an adhesive layer on the semiconductor layer sequence; F) optionally bonding the converter layer on the semiconductor layer sequence by means of an adhesive layer, wherein the semiconductor layer sequence is configured to emit radiation; and G) removing the auxiliary carrier by means of optical, mechanical and/or chemical treatment and at least partially destroying the sacrificial layer.

Claims

1. A method for producing an optoelectronic component, the method comprising: A) providing an auxiliary carrier; B) applying a sacrificial layer on the auxiliary carrier; C) applying a first converter layer on the sacrificial layer, the first converter layer comprises quantum dots embedded in a matrix material or a luminescent polymer; D) providing a semiconductor layer sequence, wherein the first converter layer is in direct contact with the semiconductor layer sequence; and E) removing the auxiliary carrier by optical, mechanical and/or chemical treatment and partially destroying the sacrificial layer such that the sacrificial layer partially remains at a side of the first converter layer facing away from the semiconductor layer sequence.

2. The method according to claim 1, wherein steps A) to E) are repeated once more, so that a white emitting optoelectronic component is produced which has a stack of two converter layers, wherein the semiconductor layer sequence is configured to emit radiation in a blue wavelength range, wherein the first converter layer is configured to emit radiation in a red wavelength range and a second converter layer is configured to emit radiation in a green wavelength range.

3. The method according to claim 1, wherein steps A) to E) are repeated at least twice, so that an optoelectronic component is produced which has a stack of at least three converter layers.

4. The method according to claim 3, wherein a white emitting optoelectronic component is produced, wherein the first converter layer is configured to emit radiation in a green wavelength range, wherein a second converter layer is configured to emit radiation in a red wavelength range, and wherein a third converter layer is configured to emit radiation in a yellow wavelength range.

5. The method according to claim 1, wherein the first converter layer is arranged downstream of the semiconductor layer sequence in a main emission direction and are configured to emit radiation in different wavelength ranges.

6. The method according to claim 1, wherein steps A) to E) are repeated at least twice, so that an optoelectronic component is produced wherein converter layers are arranged structured in a plane, when viewed in cross section, onto the optoelectronic component.

7. The method according to claim 1, wherein a maximum thickness of the first converter layer is 2 m.

8. The method according to claim 1, wherein the auxiliary carrier in step E) is removed by laser lift-off.

9. The method according to claim 1, wherein the auxiliary carrier in step E) is removed by etching or grinding.

10. The method according to claim 1, wherein the sacrificial layer is made of an organic or inorganic material.

11. The method according to claim 1, wherein the sacrificial layer comprises a material which is selected from the group consisting of GaN, CeO.sub.2, AlN, SiNx, HfO.sub.2 and Ga.sub.2O.sub.3.

12. The method according to claim 1, wherein the sacrificial layer is applied by one of the following methods: spin-coating, physical vapor deposition, chemical vapor deposition.

13. The method according to claim 1, wherein the quantum dots are selected from the group consisting of InP, CdS, CdSe, InGaAs, GaInP, CuInSe.sub.2, ZnSe, ZnS, CdTe, GaSe, AgGaSe.sub.2, CuGaS.sub.2, CuInS.sub.2, CuGaSe.sub.2 and ZnGeP.sub.2.

14. The method according to claim 1, wherein the matrix material or adhesive layer material is selected from the group consisting of silicone, epoxy, and wax.

15. The method according to claim 1, wherein the semiconductor layer sequence is an organic or inorganic light-emitting diode.

16. An optoelectronic component comprising: a first converter layer on a sacrificial layer, wherein the first converter layer comprises quantum dots embedded in one of a matrix material or a luminescent polymer; a semiconductor layer sequence, wherein the first converter layer is in direct contact with the semiconductor layer sequence; and the sacrificial layer which is arranged at a side of the first converter layer facing away from the semiconductor layer sequence.

17. The method according to claim 1, wherein a second converter layer is applied at the side of the first converter layer facing away from the semiconductor layer sequence; wherein the sacrificial layer is arranged between the first and the second converter layer, and wherein the sacrificial layer is in direct contact with the first and the second converter layer.

18. The optoelectronic component according to claim 16, wherein the sacrificial layer is selected from the group consisting of: GaN, CeO.sub.2, AN, SiN.sub.x, HfO.sub.2, Ga.sub.2O.sub.3.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) Embodiments and developments of the herein described method and component will become apparent from exemplary embodiments described below in association with the figures. In the figures:

(2) FIGS. 1A to 1C, 2A to 2F, and 3A to 3D show a sectional view of optoelectronic components which were produced by the above-mentioned method.

(3) The elements illustrated in the figures and their mutual size ratio should not be regarded as true to scale. Rather, the individual elements may be represented with an exaggerated size for the sake of better representability and/or for the sake of better understanding

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

(4) FIGS. 1A to 1C show a method for producing an optoelectronic component comprising the first converter layer. In FIG. 1A an auxiliary carrier 11 is provided. The auxiliary carrier can be made of glass. A sacrificial layer 21, for example, GaN, is applied on the auxiliary carrier 11. A converter layer 31, which is configured to emit radiation, is applied on the sacrificial layer 21. After providing a semiconductor layer sequence 11, for example, an inorganic optoelectronic component (LED) or organic optoelectronic component (OLED), an adhesive layer 51 is applied on the semiconductor layer sequence 4. After this the converter layer 31 is bonded on the semiconductor layer sequence 4 by means of the adhesive layer 51. Especially the semiconductor layer sequence 4 is configured to emit radiation, especially radiation in the blue wavelength range. After this an optical, mechanical and/or chemical treatment is carried out, especially a lift-off process in order to destroy the sacrificial layer 21. In particular the auxiliary carrier 11 is not destroyed by step G). By leaving the auxiliary carrier 11, only the converter layer comprising quantum dots and partially the sacrificial layer 21 remain on the semiconductor layer sequence 4. The sacrificial layer 21 can optionally be removed by dissolving or etching techniques.

(5) FIG. 1C shows the final optoelectronic component 100 comprising a semiconductor layer sequence 4, an adhesive layer 51 and at least one converter layer 31. The converter layer 31 can convert only a portion of the light emitted by the semiconductor layer sequence 4 or can fully convert the radiation emitted by the semiconductor layer sequence 4.

(6) FIGS. 2A to 2F show a method for producing an optoelectronic component 100 which comprises three converter layers. The converter layers are arranged downstream of the semiconductor layer sequence 4 in a main emission direction and in particular are configured to emit radiation of different wavelength ranges.

(7) FIG. 2A shows three auxiliary carriers 11, 12, and 13. On each auxiliary carrier, a sacrificial layer 21, 22, 23 and a converter layer 31, 32, 33 are arranged. As shown in FIG. 2B the first auxiliary carrier 11 with the first sacrificial layer 21 and the first converter 31 are applied on the adhesive layer 51 on the semiconductor layer sequence 4. In the next step the second converter layer 32 is applied on the first converter layer 31, as shown in FIG. 2C. Between the steps of applying the first and the second converter layers, the auxiliary carriers are removed by means of laser lift-off, wherein the sacrificial layer is destroyed.

(8) FIG. 2D shows the step of removing the third auxiliary carrier 13 so that an optoelectronic component results as shown in FIG. 2E with the layer order:

(9) semiconductor layer sequence 4,

(10) first adhesive layer 51,

(11) first converter layer 31,

(12) first sacrificial layer 21,

(13) second converter layer 32,

(14) second sacrificial layer 22,

(15) third converter layer 33,

(16) third sacrificial layer 23.

(17) The first adhesive layer 51 can be optional if the matrix material in which quantum dots are embedded can used as an adhesive material too.

(18) Optionally, the sacrificial layers can be removed by dissolving or etching techniques. Optionally, further adhesive layers can be arranged between the converter layers.

(19) FIG. 2F shows that the third sacrificial layer 23 is removed.

(20) FIGS. 3A to 3D show a method for producing an optoelectronic component which comprises three converter layers. The converter layers are arranged in a structural way, which means that the converter layers are arranged in a plane when viewed in cross-section onto the optoelectronic component 100. Steps A) to G) are performed three times so as to produce an optoelectronic component 100 which comprises three converter layers. Especially the converter layers are arranged in one plane and emit radiation of the same or of different wavelength ranges.

(21) The second converter layer is bonded using a polymer adhesive followed by lift-off to have multilayer quantum dot converters with two different properties.

(22) The x converter layers are bonded using polymer adhesive followed by lift-off to have multilayer quantum dot converters with various different properties.

(23) The herein disclosed invention is not restricted to the exemplary embodiments of the description on the basis of the said exemplary embodiments. Rather, the invention encompasses any new feature and also any combination of features which in particular comprises any combination of features in the patent claims and any combination of the features in the exemplary embodiments even if this feature or this combination itself is not explicitly specified in the patent claims or the exemplary embodiments.