Method for Transferring a Layer to a Substrate

Abstract

The present disclosure relates to a method for transferring a target layer to a substrate. The method includes providing a stack by forming a first transfer layer over a first substrate, forming a second transfer layer on the first transfer layer, the second transfer layer being water-soluble, and forming the target layer on the second transfer layer, such that the stack has a top surface. The method also includes bonding the top surface of the stack to a second substrate, separating the first transfer layer from the second transfer layer, and dissolving the second transfer layer in water.

Claims

1. A method comprising: providing a stack by: forming a first transfer layer over a first substrate; forming a second transfer layer on the first transfer layer, the second transfer layer being water-soluble; and forming a target layer on the second transfer layer such that the stack has a top surface; bonding the top surface of the stack to a second substrate; separating the first transfer layer from the second transfer layer; and removing the second transfer layer.

2. The method of claim 1, wherein removing the second transfer layer comprises exposing the target layer.

3. The method of claim 1, wherein removing the second transfer layer comprises dissolving the second transfer layer.

4. The method of claim 3, wherein dissolving the second transfer layer comprises dissolving the second transfer layer in water.

5. The method according to claim 1, wherein the second transfer layer is capable of dissolving at room temperature.

6. The method according to claim 1, wherein the target layer comprises an elastomer layer.

7. The method according to claim 6, wherein the elastomer layer has a Young's modulus equal to or less than 500 MPa at room temperature.

8. The method according to claim 6, wherein the target layer further comprises a conductive layer.

9. The method according to claim 8, wherein forming the target layer comprises forming the conductive layer and then forming the elastomer layer.

10. The method according to claim 8, wherein the conductive layer is a thin film metal layer.

11. The method according to claim 8, wherein the conductive layer is an inorganic layer.

12. The method according to claim 1, wherein the second substrate comprises a glass supporting substrate.

13. The method according to claim 1, wherein the second substrate comprises an elastomer layer.

14. The method of claim 13, wherein the elastomer layer is patterned.

15. The method of claim 13, wherein the elastomer layer comprises a channel configured for microfluidic flow.

16. The method according to claim 1, wherein the second substrate comprises a thin-film layer configured for comprising electronic circuitry.

17. The method according to claim 1, wherein the first substrate is transparent.

18. The method of claim 1, wherein the first transfer layer is an optically sensitive layer.

19. The method of claim 1, wherein separating the first transfer layer from the second transfer layer comprises separating the first transfer layer from the second transfer layer by exposure to a laser source.

20. The method according to claim 1, wherein the method is compatible with CMOS technology.

Description

BRIEF DESCRIPTION OF THE FIGURES

[0028] The above, as well as additional, features will be better understood through the following illustrative and non-limiting detailed description of example embodiments, with reference to the appended drawings.

[0029] FIG. 1 is a flow chart of a method for transferring a target layer to a target substrate, according to an example.

[0030] FIG. 2a is a schematic illustration of a cross section of a plurality of stacks resulting from the steps of the process flowchart of FIG. 1, according to an example.

[0031] FIG. 2b is a schematic illustration of a cross section of a plurality of stacks resulting from the steps of the process flowchart of FIG. 1, according to an example.

[0032] FIG. 2c is a schematic illustration of a cross section of a plurality of stacks resulting from the steps of the process flowchart of FIG. 1, according to an example.

[0033] FIG. 2d is a schematic illustration of a cross section of a plurality of stacks resulting from the steps of the process flowchart of FIG. 1, according to an example.

[0034] FIG. 2e is a schematic illustration of a cross section of a plurality of stacks resulting from the steps of the process flowchart of FIG. 1, according to an example.

[0035] FIG. 2f is a schematic illustration of a cross section of a plurality of stacks resulting from the steps of the process flowchart of FIG. 1, according to an example.

[0036] FIG. 2g is a schematic illustration of a cross section of a plurality of stacks resulting from the steps of the process flowchart of FIG. 1, according to an example.

[0037] FIG. 3a is a cross section schematic illustration of a stack, a target substrate, and the bonding step of the stack to the target substrate, according to an example.

[0038] FIG. 3b is a cross section schematic illustration of a stack, a target substrate, and the bonding step of the stack to the target substrate, according to an example.

[0039] FIG. 3c is a cross section schematic illustration of a stack, a target substrate, and the bonding step of the stack to the target substrate, according to an example.

[0040] FIG. 4a is a cross section schematic illustration of a stack, a target substrate, and the bonding step of the stack to the target substrate, according to an example.

[0041] FIG. 4b is a cross section schematic illustration of a stack, a target substrate, and the bonding step of the stack to the target substrate, according to an example.

[0042] FIG. 4c is a cross section schematic illustration of a stack, a target substrate, and the bonding step of the stack to the target substrate, according to an example.

[0043] FIG. 5a is a cross section schematic illustration of a stack, a target substrate, and the bonding step of the stack to the target substrate, according to an example.

[0044] FIG. 5b is a cross section schematic illustration of a stack, a target substrate, and the bonding step of the stack to the target substrate, according to an example.

[0045] FIG. 5c is a cross section schematic illustration of a stack, a target substrate, and the bonding step of the stack to the target substrate, according to an example.

[0046] All the figures are schematic, not necessarily to scale, and generally only show parts which are necessary to elucidate example embodiments, wherein other parts may be omitted or merely suggested.

DETAILED DESCRIPTION

[0047] Example embodiments will now be described more fully hereinafter with reference to the accompanying drawings. That which is encompassed by the claims may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided by way of example. Furthermore, like numbers refer to the same or similar elements or components throughout.

[0048] The disclosure will be further elucidated by means of the following description and the appended figures. Various exemplary embodiments are described herein with reference to the following figures, wherein like numeral denotes like entities. The figures described are schematic and are non-limiting. Further, any reference signs in the claims shall not be construed as limiting the scope of the present disclosure. Still further, in the different figures, the same reference signs refer to the same or analogous elements.

[0049] The terms “over” and “above” are used for position indication of layers and not necessarily for describing a direct contact of the layers. It is to be understood that the terms so used are interchangeable under appropriate circumstances. The term “on” is used for position indication of layers and describing a direct contact of the layers.

[0050] The term “top surface” is used as a reference for a certain surface. It is to be understood that the “top surface” can be a bottom surface in figures under appropriate circumstances, for example when the surface/stack is turned around.

[0051] The term “room temperature” refers to 300 K (Kelvin).

[0052] FIG. 1 shows a process flowchart of transferring a target layer to a target substrate, comprising the steps of:

[0053] In step a, a stack 100 is formed by:

[0054] forming a first transfer layer 20 over a first substrate 10,

[0055] forming a second transfer layer 30 over the first transfer layer 20, the second transfer layer 30 being water-soluble,

[0056] forming the target layer 40 on the second transfer layer 30, wherein the stack 100 has a top surface 40a.

[0057] In step b, the top surface 40a of the stack 100 is bonded to a second substrate 50.

[0058] In step c, the first transfer layer 20 is separated from the second transfer layer 30.

[0059] In step d, the second transfer layer 30 is dissolved in water.

[0060] The steps in FIG. 1 are further illustrated with the help of FIGS. 2a to 5c. In FIG. 2a, the first transfer layer 20 is deposited above the first substrate 10. According to an example embodiment, the first transfer layer 20 is a polymer layer formed on the first substrate 10, for example, by spin coating.

[0061] In FIG. 2b, the water soluble second transfer layer 30 is deposited on the first transfer layer 20, which has been formed on the first substrate 10. According to an example embodiment, the second transfer layer 30 is dissolvable in water at room temperature. According to an example embodiment, the second transfer layer 30 is a polymer layer dissolvable in water at room temperature, for example, but not limited to, a Polyvinyl alcohol) (PVOH, PVA, or PVAl) layer. According to an example embodiment, the second transfer layer 30 has a thickness of less than 10 μm, for example 0.8 μm.

[0062] In FIG. 2c, the target layer 40 is deposited above the water soluble second transfer layer 30, having a top surface 40a. According to an example embodiment, the target layer 40 is a chemically and/or physically weak layer. The target layer may comprise materials that range from inorganic layers such as materials, dielectrics, quantum dots to organic layers such as soft polymers, organic semiconductors, living cells and so on. Fragile layers of those materials can be transferred regardless of the weak physical constraints of the materials (chemical, mechanical, optical and/or thermal) and/or process-introduced physical constraints, including for example chemical, mechanical, optical and/or thermal constraints. According to an example embodiment, the target layer comprises an elastomer layer 42. The elastomer layer 42 may have a Young's modulus equal or less than 500 Mpa at room temperature 300 K, for example equal to or less than 100 MPa at room temperature. According to an example embodiment, the elastomer layer 42 is formed by spin coating. According to an example embodiment, the thickness of the elastomer layer 42 is equal to or less than 100 μm, for example equal to or less than 15 μm.

[0063] According to an example embodiment, the target layer 40 comprises an elastomer layer 42 and a conductive layer 44. According to an example embodiment, as shown in FIG. 3a, the conductive layer 44 is deposited before the elastomer layer 42. According to another example embodiment, the conductive layer 44 is deposited after the elastomer layer 42, which is not shown in the figures. According to another example embodiment, which is not shown in the figures, the target layer 40 comprises multiple layers such as a plurality of elastomer layers, a plurality of conductive layers and/or a combination. According to an example embodiment, the conductive layer 44 comprises a thin film metal layer. The metal layer may be a layer of metal, for example aluminum (Al), copper (Cu), iron (Fe) or an alloy thereof. According to an example embodiment, the conductive layer 44 comprises an inorganic layer. The inorganic layer may comprise silicon (Si), a III-V material, a 2-dimensional material and/or another conductive non-metallic material. According to an example embodiment, the conductive layer 44 has a thickness of equal to or less than 100 nm.

[0064] According to an example embodiment, the conductive layer 44 is a thin film metal layer, an inorganic layer, or a combination thereof. According to an example, the conductive layer 44 is formed by for example chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD), etc.

[0065] According to an example embodiment, which is not shown in the figures, the method may further comprise a step of patterning of at least one layer, the conductive layer and/or the elastomer layer, of the target layer 40 before step b to form electronic connections/circuits.

[0066] In FIGS. 2d, 3c, 4c and 5c, the top surface 40a of the stack 100 is bonded to the second substrate 50.

[0067] According to an example embodiment the second substrate 50 comprises a semiconductor substrate, such as silicon, GaN, or another semiconductor material. The second substrate 50 may also comprise a glass supporting substrate 52 which can be used in microfluidic devices for possible optical inspection. According to an example embodiment, the second substrate 50 may comprise an elastomer layer 54 formed by spin coating. According to an example embodiment, as shown in FIG. 4b, the second substrate comprises an elastomer layer 54 above a supporting substrate 52. The elastomer layer 54 may be patterned before step b in FIG. 1, According to an example embodiment, the elastomer layer 54 may be of the same type as the elastomer layer 42. According to an example embodiment, the elastomer layer 54 is patterned to form at least a channel configured for microfluidic flow. According to an example embodiment, the second substrate 50 may comprise a semiconductor circuit layer. In an embodiment, as shown in FIG. 5b, the semiconductor circuit layer is a thin-film layer 56 configured as an electronic circuit by patterning processes. According to an example embodiment, the patterning uses lithography technology. According to an example embodiment, the elastomer layer 54 is formed above the thin-film layer 56.

[0068] In FIG. 2e, the first transfer layer 20 is separated from the second transfer layer 30. The separation may be done by a thermal process. According to an example embodiment, the first transfer layer 20 can be a thermal sensitive layer where the chemical properties of the first transfer layer 20 is changed when exposed to a heat source. The separation may be alternatively done by exposure to a laser source. According to another example embodiment, the first transfer layer 20 is an optical sensitive layer where the chemical properties of the first transfer layer 20 is changed when exposed to a laser source of certain wavelength. The first substrate 10 is transparent so that, the first transfer layer 20 can be separated from the second transfer layer 30 by exposure to the laser source. Being transparent means that the laser with a certain wavelength, for example 248 nm, can be transmitted through the first substrate 10. When the separation is in progress, the second transfer layer 30 functions as a protective layer to protect the fragile target layer 40.

[0069] In FIG. 2f, the second transfer layer 30 is dissolved in water. The process is for example done at room temperature to further limit damage or impact on the transfer layer 30. According to an example, one side of the second transfer layer 30 is completely exposed to water. According to an example, because of the large exposure area of the second transfer layer 30, step c ire FIG. 1 takes less than 1 minute to remove the second transfer layer 30 with a thickness of 0.8 μm in the case of transferring the target layer 40 to the second substrate.

[0070] In FIG. 2g, the fragile target layer 40 is efficiently and successfully transferred to the second substrate 50.

[0071] According to an example embodiment, the transferring method is applicable for die to die, wafer to wafer or roll to roll transfer due to the large exposure area of the second transfer layer 30 to water.

[0072] According to an example embodiment, which is not shown in the figures, the method further comprises a step of patterning of at least one layer in the target layer 40 after step d in FIG. 1 to form for example electronic connections/circuits.

[0073] According to an example embodiment, the process of lithography, bonding, debonding and patterning are conventional CMOS (Complementary metal-oxide-semiconductor) technology processes.

[0074] While some embodiments have been illustrated and described in detail in the appended drawings and the foregoing description, such illustration and description are to be considered illustrative and not restrictive. Other variations to the disclosed embodiments can be understood and effected in practicing the claims, from a study of the drawings, the disclosure, and the appended claims. The mere fact that certain measures or features are recited in mutually different dependent claims does not indicate that a combination of these measures or features cannot be used. Any reference signs in the claims should not be construed as limiting the scope.