FREESTANDING CERAMIC TILE MANUFACTURE
20240183019 ยท 2024-06-06
Assignee
Inventors
Cpc classification
C23C4/02
CHEMISTRY; METALLURGY
B28B11/243
PERFORMING OPERATIONS; TRANSPORTING
B28B7/38
PERFORMING OPERATIONS; TRANSPORTING
C04B2235/95
CHEMISTRY; METALLURGY
C04B35/62218
CHEMISTRY; METALLURGY
C23C4/185
CHEMISTRY; METALLURGY
International classification
Abstract
A method of producing a freestanding ceramic tile. The method involves: grit-blasting a substrate using a grit size in the range from 36 to 220 mesh; depositing a release layer of carbon or graphite from 2 to 10 microns thick on the grit-blasted surface of the substrate; applying ceramic over the release layer until a desired thickness of ceramic is achieved to form a ceramic layer; heating the substrate, release layer, and ceramic layer to a temperature of from 800 to 1000 degrees Celsius; keeping the substrate, release layer, and ceramic layer at a temperature from 800 to 1000 degrees Celsius for a time from 10 to 20 minutes to remove the release layer; and cooling the substrate and ceramic layer at a rate of at least 200 degrees Celsius per minute, such that the ceramic layer separates from the substrate to produce a freestanding ceramic tile.
Claims
1. A method of producing a freestanding ceramic tile, the method comprising the steps of: grit-blasting a substrate using a grit size in the range from 36 mesh to 220 mesh; depositing a release layer on the grit-blasted surface of the substrate, wherein the release layer is a layer of carbon or a layer of graphite, the release layer being from 2 to 10 microns thick; applying ceramic over the release layer until a desired thickness of ceramic is achieved to form a ceramic layer; heating the substrate, release layer, and ceramic layer to a temperature of from 800 to 1000 degrees Celsius; keeping the substrate, release layer, and ceramic layer at a temperature from 800 to 1000 degrees Celsius for a time from 10 to 20 minutes to remove the release layer; and cooling the substrate and ceramic layer via quenching at a rate of at least 200 degrees Celsius per minute, such that the ceramic layer separates from the substrate to produce a freestanding ceramic tile.
2. The method of claim 1, wherein the substrate comprises at least one selected from the list of nickel and stainless steel.
3. The method of claim 1, wherein the grit comprises one or more of alumina, metal shot, sand, or solid CO.sub.2.
4. The method of claim 1, wherein the release layer is applied using vacuum sputtering or physical abrasion.
5. The method of claim 1, wherein the ceramic is applied over the release layer by plasma spray.
6. The method of claim 1, wherein the thickness of the ceramic layer is 1.5 mm or more.
7. The method of claim 1, wherein the substrate is heated using an air furnace.
8. The method of claim 1, wherein the substrate is quenched using at least one selected from the list of air, and water.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0017] Embodiments will now be described by way of example only, with reference to the Figures, in which:
[0018]
[0019]
[0020] The following table lists the reference numerals used in the drawings with the features to which they refer:
TABLE-US-00001 Ref no. Feature FIG. 100 Method 1 110 First step 1 120 Second step 1 130 Third step 1 140 Fourth step 1 150 Fifth step 1 160 Sixth step 1 200 Substrate 2 210 Release layer 2 220 Ceramic layer 2
DETAILED DESCRIPTION
[0021] Aspects and embodiments of the present disclosure will now be discussed with reference to the accompanying figures. Further aspects and embodiments will be apparent to those skilled in the art.
[0022]
[0023] The second step 120 in the process is to deposit a release layer 210 (see
[0024] In the third step 130, the ceramic layer 220 (see
[0025] In a fourth step 140, the substrate 200 (and therefore the release layer 210 and ceramic layer 220) is heated to a temperature from 800 to 1000 degrees Celsius (1472 to 1832 degrees Fahrenheit). This can be achieved by placing the substrate into an air furnace for example, although the skilled person will appreciate alternative heating means could be used to heat the substrate.
[0026] In a fifth step 150, the substrate is held at a temperature from 800 to 1000 degrees Celsius for a period of time equalling from 10 to 20 minutes. By holding the carbon or graphite layer in the temperature range of from 800 to 1000 degrees Celsius for a period of time equalling from 10 to 20 minutes, the carbon or graphite layer will burn out, owing to the fact that carbon and graphite oxidise within this temperature range.
[0027] In the sixth and final step 160, the substrate is quenched to bring it rapidly back down to room temperature. In this context, rapidly equates to a cooling rate of at least 200 degrees Celsius (or 392 degrees Fahrenheit) per minute. This can be achieved using air or water that has been cooled, or other suitable means as will be familiar to the skilled person. The ceramic layer will separate from the substrate during the quenching process, due to the carbon or graphite release layer having been burnt out during the previous step of the method.
[0028] This method has been found to repeatedly produce flat, free-standing ceramic tiles with a very low failure rate. It also does not require the use of any noxious substances, and is faster than other known methods for producing ceramic tiles. In particular, the use of a carbon or graphite release layer is advantageous as carbon and graphite both allow some movement of the ceramic to accommodate stresses arising during the ceramic deposition process, reducing the failure rate compared to other known process where the ceramic layer curls away from the substrate, leading to curved or broken tiles unsuitable for use in testing.
[0029] It will be understood that the invention is not limited to the embodiments above-described and various modifications and improvements can be made without departing from the concepts described herein. Except where mutually exclusive, any of the features may be employed separately or in combination with any other features and the disclosure extends to and includes all combinations and sub-combinations of one or more features described herein.