Flyback Converter with Improved Over-Voltage Protection Functionality
20220399820 · 2022-12-15
Inventors
Cpc classification
H02M1/0009
ELECTRICITY
H02M1/0064
ELECTRICITY
H02M3/33507
ELECTRICITY
H02M1/32
ELECTRICITY
International classification
Abstract
A flyback converter with improved over-voltage protection (OVP) functionality, which includes a primary winding arranged to receive an input voltage, a secondary winding coupled to the primary winding and connected to a rectifier circuit to generate DC output voltage, a primary side regulating controller, an auxiliary winding arranged to provide electric power to the primary side regulating controller, an external detection circuit connected between the auxiliary winding and the primary side regulating controller, an internal detection circuit arranged inside the primary side regulating controller and coupled to the external detection circuit by detecting the current value flowing through the external detection circuit and comparing it with a predetermined current value of the internal detection circuit to enable or disable an OVP circuit to protect the primary side regulating controller, and a switching device arranged to receive on/off signals generated for regulating current flowing through the primary winding.
Claims
1. A flyback converter with improved over-voltage protection (OVP) functionality comprising: a primary winding arranged to receive an input voltage; a secondary winding coupled to said primary winding and connected to a rectifier circuit to generate an output DC voltage; a primary side regulating controller; an auxiliary winding coupled to said primary winding and arranged to provide electric power to said primary side regulating controller; an external detection circuit connected between said auxiliary winding and said primary side regulating controller; an internal detection circuit arranged inside said primary side regulating controller and coupled to said external detection circuit to enable or disable an over-voltage protection circuit to protect said primary side regulating controller, by detecting a current value flowing through said external detection circuit and comparing said current value with a predetermined current value of said internal detection circuit; and a switching device connected to said primary winding and said primary side regulating controller to receive on/off signals generated from said primary side regulating controller to regulate current flowing through said primary winding.
2. The flyback converter of claim 1, wherein said external detection circuit is coupled to said internal detection circuit through a connection terminal.
3. The flyback converter of claim 2, wherein said internal detection circuit includes: an operational amplifier configured to have a positive input terminal grounded, a negative input terminal coupled to a first transistor and said connection terminal, and an output terminal coupled to said first transistor; a current mirror configured to have an input terminal coupled to said first transistor to receive said current value flowing through said external detection circuit and output a current with a value proportion to said current value; a current source coupled to said current mirror to provide said predetermined current value; a buffer configured to have an input terminal coupled to said output terminal of said current mirror and said current source, output terminal of said buffer coupled to said over-voltage protection circuit, by comparing said current value flowing through said external detection circuit with said preset current value to activate or deactivate said over-voltage protection circuit.
4. The flyback converter of claim 3, wherein said first transistor is a N-type metal oxide semiconductor field effect transistor.
5. The flyback converter of claim 4, wherein said current mirror includes: a second transistor, said second transistor being a P-type metal oxide semiconductor field effect transistor; a third transistor, said third transistor being a P-type metal oxide semiconductor field effect transistor, wherein gates of said second transistor and said third transistor are connected to each other and also coupled to drains of said first transistor and said second transistor, and sources of said second transistor and said third transistor are both connected to a power supply source.
6. The flyback converter of claim 4, wherein said negative input terminal of said operational amplifier is coupled to source of said first transistor.
7. The flyback converter of claim 4, wherein said output terminal of said operational amplifier is coupled to gate of said first transistor.
8. The flyback converter of claim 4, wherein said input end of said current mirror is coupled to said drain of said first transistor.
9. The flyback converter of claim 1, wherein said external detection circuit is a voltage divider circuit.
10. The flyback converter of claim 1, wherein said primary side regulating controller is an integrated circuit controller.
11. The flyback converter of claim 1, wherein said switching device is a metal oxide semiconductor field effect transistor.
12. A flyback converter with improved over-voltage protection (OVP) functionality, comprising: a primary winding configured to receive an input voltage; a secondary winding coupled to said primary winding and connected to a rectifier circuit to generate an output DC voltage; a primary side regulating controller; an auxiliary winding coupled to said primary winding and arranged to provide electric power to said primary side regulating controller; an external detection circuit connected between said auxiliary winding and said primary side regulating controller; an internal detection circuit arranged inside said primary side regulating controller and coupled to said external detection circuit through a connection terminal, by detecting a current value flowing through said external detection circuit and comparing said current value with a predetermined current value of said internal detection circuit, wherein said internal detection circuit includes: a feedback circuit is configured to lock voltage of said connection terminal to a preset voltage value; a current mirror coupled to said feedback circuit with an input terminal to receive said current value flowing through said external detection circuit and output a current with a value proportion to said current value; a comparison circuit is configured to have an input terminal coupled to said output terminal of said current mirror and coupled to a current source with a predetermined current value, an output terminal coupled to said over-voltage protection circuit, by comparing said current value flowing through said external detection circuit with said preset current value to activate or deactivate said over-voltage protection circuit; and a switching device connected to said primary winding and said primary side regulating controller to receive on/off signals generated from said primary side regulating controller to regulate current flowing through said primary winding.
13. The flyback converter of claim 12, wherein said feedback circuit includes an operational amplifier configured to have a positive input terminal grounded, a negative input terminal coupled to said current mirror via a first transistor and said connection terminal, and an output terminal coupled to said first transistor.
14. The flyback converter of claim 13, wherein said preset voltage value is zero volt.
15. The flyback converter of claim 12, wherein said comparison circuit is a buffer configured to output a digital signal of 0 or 1, according to the comparison between said current value flowing through said external detection circuit and said predetermined current value, to activate or deactivate said over-voltage protection circuit.
16. The flyback converter of claim 13, wherein said first transistor is a N-type metal oxide semiconductor field effect transistor.
17. The flyback converter of claim 13, wherein said current mirror includes: a second transistor, said second transistor being a P-type metal oxide semiconductor field effect transistor; a third transistor, said third transistor being a P-type metal oxide semiconductor field effect transistor, wherein gates of said second transistor and said third transistor are connected to each other and also coupled to drains of said first transistor and said second transistor, and sources of said second transistor and said third transistor are both connected to a power supply source.
18. The flyback converter of claim 16, wherein said negative input terminal of said operational amplifier is coupled to source of said first transistor.
19. The flyback converter of claim 16, wherein said output terminal of said operational amplifier is coupled to gate of said first transistor.
20. The flyback converter of claim 16, wherein said input end of said current mirror is coupled to said drain of said first transistor.
21. The flyback converter of claim 12, wherein said external detection circuit is a voltage divider circuit.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0027] The components, characteristics and advantages of the present invention may be understood by the detailed descriptions of the preferred embodiments outlined in the specification and the drawings attached:
[0028]
[0029]
[0030]
[0031]
DETAILED DESCRIPTION
[0032] Some preferred embodiments of the present invention will now be described in greater detail. However, it should be recognized that the preferred embodiments of the present invention are provided for illustration rather than limiting the present invention. In addition, the present invention can be practiced in a wide range of other embodiments besides those explicitly described, and the scope of the present invention is not expressly limited except as specified in the accompanying claims.
[0033] The present invention aims to propose a flyback converter with improved over voltage protection, which improves the problem that the voltage protection point is fixed in conventional flyback converters.
[0034] Please refer to
[0035] In a preferred embodiment, the PSR controller 105 is an integrated circuit controller (controller IC).
[0036] In a preferred embodiment, the main switch Q3 (switching device) is a metal oxide semiconductor field effect transistor (MOSFET).
[0037] When the flyback converter energizes the transformer 103 during turn-on (t_on) period, the input voltage Vin of the flyback converter can be detected by the primary to auxiliary winding turns ratio Np/Na of the transformer 103 and the voltage Vaux measured on the auxiliary winding Na.
[0038] Auxiliary winding Na combined with voltage divider resistors R1 and R2 (voltage divider circuit) is connected to the FB pin as an external detection circuit 109 for quasi-resonant (QR) mode and OVP detections.
[0039] The current detection circuit 107 is electrically connected to the drain of the MOSFET transistor (main switch Q3) and the CS pin of the PSR controller 105 for detecting the current signal of the MOSFET transistor.
[0040] Referring to
[0041] Referring to
[0042] Referring to
[0043] Please refer to
where Na/Np is the ratio of the auxiliary winding to the primary winding, Vpri is the voltage of the primary winding, and R1 is one of the voltage divider resistors (refer to
[0044] The drain of the transistor Q1 is coupled to the drain of the transistor Q4 to receive the current I.sub.FB. The gates of the transistors Q1 and Q2 are coupled to each other and to the drains of the transistors Q1 and Q4, and the sources of the transistors Q1 and Q2 are coupled to the supply voltage V.sub.cc.
[0045] In a preferred embodiment, the first transistor is a N-type metal oxide semiconductor field effect transistor (NMOSFET).
[0046] In a preferred embodiment, the second transistor is a P-type metal oxide semiconductor field effect transistor (PMOSFET).
[0047] In a preferred embodiment, the third transistor is a P-type metal oxide semiconductor field effect transistor (PMOSFET).
[0048] The current I.sub.M is generated at the drain of the transistor Q2 according to the current I.sub.FB, which means that the current mirror receives the current I.sub.FB and mirrors the current I.sub.FB to generate the current I.sub.M. Therefore, I.sub.M depends on the relevant parameters of the transistors Q1 and Q2, and there is a proportional relationship between I.sub.M and I.sub.FB. If the transistors Q1 and Q2 are identical, I.sub.M is equal to I.sub.FB.
[0049] A current source 213 generate a current has a predetermined current value IVINOVP_TH, one end is coupled to the drain of the transistor Q2 and the other end is grounded.
[0050] A buffer 215 has an input terminal coupled to the current source 213 and the drain of the transistor Q2, and an output terminal coupled to the input terminal of the OVP circuit of the flyback converter for enabling or disabling the OVP circuit. The buffer 215 can output a digital signal 0 or 1 according to the comparison between I.sub.M generated by the current mirror and a preset current value IVINOVP_TH. When the input voltage Vin undergoes large transient changes, the output voltage Vpri exceeds the rated value, which will be reflected on I.sub.FB and I.sub.M, the level of current I.sub.FB is
Therefore, when the current I.sub.M is greater than the preset current value IVINOVP_TH, the buffer 215 outputs digital signal 1, OVP circuit of the flyback converter is then triggered to protect the PSR controller 105, otherwise the buffer 215 outputs digital signal 0, OVP circuit of the flyback converter will be in sleep state.
[0051] While various embodiments of the present invention have been described above, it should be understood that they have been presented by a way of example and not limitation. Numerous modifications and variations within the scope of the invention are possible. The present invention should only be defined in accordance with the following claims and their equivalents.