Pulse output circuit, shift register, and display device
10304399 ยท 2019-05-28
Assignee
Inventors
Cpc classification
H01L2924/0002
ELECTRICITY
G09G2310/0254
PHYSICS
H01L2924/00
ELECTRICITY
H01L2924/0002
ELECTRICITY
G09G2310/0297
PHYSICS
G09G2310/0291
PHYSICS
G09G2310/08
PHYSICS
G11C19/00
PHYSICS
H01L2924/00
ELECTRICITY
G09G2310/0286
PHYSICS
G09G2310/0289
PHYSICS
International classification
Abstract
A circuit is provided which is constituted by TFTs of one conductivity type, and which is capable of outputting signals of a normal amplitude. When an input clock signal CK1 becomes a high level, each of TFTs (101, 103) is turned on to settle at a low level the potential at a signal output section (Out). A pulse is then input to a signal input section (In) and becomes high level. The gate potential of TFT (102) is increased to (VDDV thN) and the gate is floated. TFT (102) is thus turned on. Then CK1 becomes low level and each of TFTs (101, 103) is turned off. Simultaneously, CK3 becomes high level and the potential at the signal output section is increased. Simultaneously, the potential at the gate of TFT (102) is increased to a level equal to or higher than (VDD+V thN) by the function of capacitor (104), so that the high level appearing at the signal output section (Out) becomes equal to VDD. When SP becomes low level; CK3 becomes low level; and CK1 becomes high level, the potential at the signal output section (Out) becomes low level again.
Claims
1. A display device comprising: a driver circuit including a first stage, a second stage, and a third stage, wherein each of the first stage, the second stage, and the third stage includes a first transistor, a second transistor, a third transistor, a capacitor, and a power supply, wherein a gate electrode of the first transistor is directly connected to a gate electrode of the third transistor in each of the first stage, the second stage, and the third stage, wherein a first electrode of the first transistor in the first stage is directly connected to an output of the second stage, wherein a second electrode of the first transistor is directly connected to a gate electrode of the second transistor in each of the first stage, the second stage, and the third stage, wherein the second electrode of the first transistor is directly connected to a first electrode of the capacitor in each of the first stage, the second stage, and the third stage, wherein a first electrode of the second transistor is directly connected to a first electrode of the third transistor in each of the first stage, the second stage, and the third stage, wherein a second electrode of the third transistor is directly connected to the power supply in each of the first stage, the second stage, and the third stage, wherein a second electrode of the capacitor in the first stage is directly connected to an input of the third stage, and wherein the first transistor, the second transistor, and the third transistor are the same conductivity type.
2. The display device according to claim 1, wherein the gate electrode of the first transistor is electrically connected to a first signal input section in each of the first stage, the second stage, and the third stage.
3. The display device according to claim 2, wherein a second electrode of the second transistor is electrically connected to a second signal input section in each of the first stage, the second stage, and the third stage, and wherein a clock signal input to the first signal input section and a clock signal input to the second signal input section are opposite in polarity to each other in each of the first stage, the second stage, and the third stage.
4. The display device according to claim 1, wherein the second electrode of the capacitor is directly connected to the first electrode of the second transistor in each of the first stage, the second stage, and the third stage.
5. The display device according to claim 1, wherein the display device is applied to an electronic device selected from the group consisting of a liquid crystal display device, a video camera, a notebook-type personal computer, a portable information terminal, an audio reproduction device, a digital camera and a portable telephone.
Description
BRIE DESCRIPTION OF THE DRAWINGS
(1) In the accompanying drawings:
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DESCRIPTION OF THE PREFERRED EMBODIMENTS
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(21) While the circuit in this embodiment mode of the present invention is formed by using only n-channel TFTs, a similar circuit may be formed by using only p-channel TFTs.
(22) The clock signal input to the first signal input section (CKA) and the clock signal input to the third signal input section (CKB) are opposite in polarity to each other. The second clock signal has a phase delay of period from the first clock signal, and the third clock signal further has a phase delay of period from the second clock signal. Further, the fourth clock signal has a phase delay of period from the third clock signal. That is, the third clock signal has a phase delay of period from the first clock signal and is equal to a signal obtained by reversing the polarity of the first clock signal. Similarly, the fourth clock signal has a phase delay of period from the second clock signal and is equal to a signal obtained by reversing the polarity of the second clock signal.
(23) In the shift register using pulse output circuits each of which is formed as shown in
(24) Referring to Table 1, in the (4n3) th stage (n: a natural number, 1n), the first clock signal is input to the first signal input section (CKA) and the third clock signal is input to the third signal input section (CKB). In the (4n2) th stage (n: a natural number, 1n), the second clock signal is input to the first signal input section (CKA) and the fourth clock signal is input to the third signal input section (CKB). In the (4n1) th stage, the third clock signal is input to the first signal input section (CKA) and the first clock signal is input to the third signal input section (CKB). In the 4n th stage, the fourth clock signal is input to the first signal input section (CKA) and the first clock signal is input to the third signal input section (CKB).
(25) TABLE-US-00001 TABLE 1 Signal input portion (CKA) Signal input portion (CKB) 4(n-1) th stage Fourth clock signal Second clock signal 4n-3 th stage First clock signal Third clock signal 4n-2 th stage Second clock signal Fourth clock signal 4n-1 th stage Third clock signal First clock signal 4n th stage Fourth clock signal Second clock signal . . . . . . . . .
(26) That is, the shift register in this embodiment mode of the invention has a certain number of constitutional units each formed of a portion including the pulse output circuits in four consecutive stages. Even if the number of stages in which the pulse output circuits are connected is smaller than four, the clock signals are input in the order in accordance with Table 1.
(27) The operation of the circuits will be described with reference to the timing chart of
(28) <1> In the first-stage pulse output circuit, the first clock signal (CK1) is supplied to the gate electrodes of the TFTs 101 and 103 and becomes high level to turn on the TFTs 101 and 103. At this stage, since no start pulse (SP) has been input, the potential at the gate electrode of the TFT 102 is low level and the potential at the signal output section (Out) is settled at low level.
<2> When a start pulse (SP) input from the signal input section (In) thereafter becomes high level, the potential at the gate electrode of the TFT 102 is increased to (VDDV thN) to be thereafter maintained in a floating state. The TFT 102 is thus turned on. At this point, however, the third clock signal (CK3) input to the signal input section (CKB) is low level and the potential at the signal output section (Out) is not changed.
<3> Subsequently, the first clock signal (CK1) becomes low level to turn off the TFTs 101 and 103. Simultaneously, the third clock signal (CK3) becomes high level. Since the TFT 102 has already been turned on, the potential at the signal output section (Out) is increased. The potential at the gate electrode of the TFT 102, which is maintained in the floating state at (VDDV thN) since the TFT 101 has been turned on, is further increased from (VDDV thN) to a level higher than (VDD+V thN) by the function of the capacitor 104, as the potential at the signal output section (Out) is increased. Therefore, when the potential at the signal output section (Out) becomes high level, it is equal to VDD.
<4> The start pulse (SP) then becomes low level. Subsequently, when the first clock signal (CK1) again becomes high level, the TFTs 101 and 103 are turned on, the potential at the gate electrode of the TFT 102 becomes low level, and the TFT 102 is thus turned off. Because the TFT 103 is turned on, the potential at the signal output section (Out) becomes low level.
(29) The circuits in the first to final stages successively operate as described above to output sampling pulses. The shift register formed by using the pulse output circuit of the present invention is formed only of TFTs of one conductivity type but can output pulses of a normal amplitude by avoiding attenuation of the amplitude of the output pulses due to the threshold value of the TFTs. Even during the period during which no sampling pulse is output from each stage, the TFT 103 is turned on each time the clock signal input from the signal input section (CKA) becomes high level, thereby settling the signal output section (Out) potential at low level. The signal output section is not floated for a long time. Therefore, the shift register can be used in a circuit of a comparatively low driving frequency, e.g., a gate signal line driver circuit.
(30) Embodiments of the present invention will be described below.
Embodiment 1
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(33) Each of output electrodes of TFTs 305 and 306 is connected to an input electrode of TFT 301. TFT 305 has an input electrode connected to a second signal input section (InL) and has a gate electrode electrically connected to the fifth signal input section (L). TFT 306 has an input electrode connected to a third signal input section (InR) and has a gate electrode electrically connected to the sixth signal input section (R). Input change signal (LR) is input to the fifth signal input section (L), while inverted input change signal (RL) is input to the sixth signal input section (R). Each of LR and RL exclusively has a high level or a low level in relation to each other. Correspondingly, the input change circuit 310 in this embodiment changes between two states described below.
(34) Firstly, when LR and RL are high level and low level, respectively, TFT 305 is turned on and TFT 306 is turned off. A sampling pulse supplied from the preceding stage through the second signal input section (InL) is thus applied to the input electrode of TFT 301. Secondly, when LR and RL are low level and high level, respectively, TFT 305 is turned off and TFT 306 is turned on. A sampling pulse supplied from the preceding stage through the third signal input section (InR) is thus applied to the input electrode of TFT 301.
(35) In the shift register shown in
(36) To change the scanning direction, it is necessary to change timing of inputting of the clock signals. The timing shown in the timing chart of
Embodiment 2
(37) An example of a display device fabricated by using only TFTs of one polarity will be described.
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(39) The substrate having the pixel TFT and the driver circuits may be manufactured in accordance with a known method, for example, as disclosed in U.S. Pat. No. 5,889,291 issued to Koyama et al. Also, it is possible to crystallize a semiconductor film for an active layer of the TFTs by utilizing a metal element for promoting crystallization although other known methods can be used for crystallization. Such a method of using the metal element is disclosed, for example, in U.S. Pat. No. 5,643,826 issued to Ohtani et al. The entire disclosures of these U.S. Pat. Nos. 5,889,291 and 5,643,826 are incorporated herein by reference.
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(42) The operation of the circuit shown in
(43) First clock signal (CK1) having an amplitude of a low level/high level=VSS/VDD1 is input from a signal input section (CK in1). When CK1 is high level, each of TFTs 602 and 604 is ON, the potential at the gate electrode of TFT 603 is low level, and TFT 603 is OFF. The ON resistance of TFT 602 is set to a sufficiently small value relative to that of TFT 601 in the design stage. Therefore, a low level appears at node . When CK1 is low level, each of TFTs 602 and 604 is OFF, so that the potential at the gate electrode of TFT 603 is pulled up toward VDD2 through TFT 601 operating in a saturated state. When the potential becomes equal to (VDD2V thN), TFT 601 is turned off and the gate electrode of TFT 603 is floated. TFT 603 is thus turned on and the potential at node is pulled up toward VDD2. With the increase in the potential at node , the potential at the gate electrode of TFT 603 in the floating state is pulled up by the function of capacitor 605 to a level higher than VDD2. The potential at the gate electrode of TFT 603 is thus set above (VDD2+V thN), so that the high level appearing at node becomes equal to VDD2. As a result, the low level of an output signal becomes equal to VSS and the high level of the output signal becomes equal to VDD2, thus completing amplitude conversion.
(44) On the other hand, third clock signal (CK3) also having the amplitude VSS-VDD1 is input from a signal input section (CK in2). The one-input-type level shifter constituted by TFTs 606 to 609 and capacitor 610 operates in the same manner as that described above to perform amplitude conversion, thereby outputting through node a signal having an amplitude of VSS-VDD2. The signal appearing at node has the polarity opposite to that of the input CK1, and the signal appearing at node has the polarity opposite to that of the input CK3.
(45) In the level shifter used in the display device of this embodiment, buffer stages (Stages 2 to 4) are provided as stages following the level shifter circuits (Stage 1) in consideration for the load with respect to the amplitude-converted pulse. The inverter circuit forming each buffer stage is of a two input type requiring an input signal and an inverted signal of the input signal. The two-input-type inverter circuit is used for the purpose of reducing power consumption. In the above-described level shifter circuit, a shoot-through current flows through TFTs 601 and 602 between VSS and VDD2 when TFT 602 is ON. The two-input-type inverter is used to prevent the shoot-through current from flowing during operation.
(46) In the inverter circuits in Stage 2 shown in
(47) The operation of the inverter circuits will be described. The operation of one of the two inverter circuits in Stage 2, i.e., the inverter circuit formed of TFTs 611 to 614 and capacitor 615, will be described. The other inverter circuit operates in the same manner.
(48) When the signal supplied to the gate electrode of TFT 611 is high level, TFT 611 is ON and the potential at the gate electrode of TFT 613 is pulled up toward VDD2. When the potential becomes equal to (VDD2V thN), TFT 611 is turned off and the gate electrode of TFT 613 is floated. On the other hand, since the signal supplied to the gate electrodes of TFTs 612 and 614 is low level, each of TFTs 612 and 614 is OFF. Since the potential at the gate electrode of TFT 613 has been pulled up to (VDD2V thN), TFT 613 is ON and the potential at node is pulled up toward VDD2. As in the operation of the above-described level shifter circuit, with the increase in the potential at node , the potential at the gate electrode of TFT 613 in the floating state is pulled up by the function of the capacitor 615 to a level higher than VDD2. The potential at the gate electrode of TFT 613 is thus set above (VDD2+V thN), so that the high level appearing at node becomes equal to VDD2.
(49) When the signal supplied to the gate electrode of TFT 611 is low level, TFT 611 is OFF, high level is supplied to the gate electrodes of TFTs 612 and 614, and each of TFTs 612 and 614 is ON. Consequently, the potential at the gate electrode of TFT 613 is low level and the low level appears at node .
(50) A pulse is also output to node by the same operation. The pulse output through node is opposite in polarity to the pulse appearing at node .
(51) The same operation is performed in each of Stages 3 and 4 to finally output pulses to signal output sections (3) and (4).
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(56) When high level is input to each of signal input sections (In1) and (In2), each of TFTs 702, 703, 705, and 706, is turned on, the potential at the gate electrode of TFT 704 becomes low level, and TFT 704 is thus turned off. As a result, low level appears at a signal output section (Out). When low level is input to both or one of the signal input sections (In1) and (In2), conduction is not provided between the gate electrode of TFT 704 and power supply VSS and the potential at the gate electrode of TFT 704 is therefore pulled up toward VDD2 to turn on TFT 704. Further, the potential is increased to a level higher than (VDD+V thN) by the function of capacitor 707, so that high level corresponding to potential VDD2 appears at the signal output section (Out).
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(59) The inverter circuit and the level shifter circuit in the circuits constituting the driver circuits of the display device of this embodiment may be the same as those described in the specification of the invention filed in Japanese Patent Application No. 2001-133431 by the inventors of the present application.
(60) The driver circuits constituting the entire display device including the pixel portion in this embodiment are fabricated by using only TFTs (e.g., n-channel TFTs) of one polarity which is the same as the polarity of the pixel TFTs. Therefore, the ion doping process for imparting p-type conductivity to a semiconductor layer can be removed. This contributes to a reduction in manufacturing cost and to an improvement in yield.
(61) While the TFTs constituting the display device of this embodiment are n-channel TFTs, driver circuits and pixel TFTs may be formed by using only p-channel TFTs according to the present invention. In such a case, the ion doping process to be removed is a process for imparting n-type conductivity to a semiconductor layer. Also, the present invention is applied not only to liquid crystal display devices but also to any of semiconductor devices if the semiconductor device is fabricated by integrally forming a driver circuit on an insulator.
Embodiment 3
(62) In the embodiment mode of the present invention and the above embodiments of the present invention, examples of the circuits formed by using only n-channel TFTs have been shown. However, similar circuits may be formed by using only p-channel TFTs and by interchanging the power supply-potential levels.
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Embodiment 4
(65) A test piece of a shift register shown in
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Embodiment 5
(68) The present invention can be applied to manufacture of display devices to be used in various electronic devices. Examples of such electronic devices are portable information terminals (an electronic notebook, a mobile computer, a portable telephone, etc.), a video camera, a digital camera, a personal computer, a television set, and a portable telephone, such as those illustrated in
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(76) It is to be noted that the above-described devices of this embodiment are only examples and that the invention is not exclusively applied to them.
(77) According to the present invention, even in a case where a driver circuit and a pixel portion of a display device are formed by using only TFTs of one conductivity type, output pulses of a normal amplitude can be obtained without causing attenuation of the amplitude of the output pulses due to the threshold value of the TFTs. Thus, the number of manufacturing steps can be reduced and this effect contributes to a reduction in manufacturing cost and to an improvement in yield. Thus, the present invention makes it possible to supply display devices at a reduced cost.