PI-orbital semiconductor quantum cell

Abstract

Herein is disclosed a quantum cell from top to down including: an N-type ohmic contact electrode, an N-type ?-orbital semiconductor substrate, an N-type ?-orbital semiconductor epitaxy layer, a SiO.sub.2 passivation layer, a graphite contact layer, a Schottky contact electrode, a binding layer, and a radioisotope layer. The N-type ?-orbital semiconductor substrate includes an organic semiconductor material with an aromatic group or a semiconductor material with a carbon-carbon bond. The N-type ?-orbital semiconductor epitaxy layer has a doping concentration of 1?10.sup.13-5?10.sup.14 cm.sup.?3 and is formed by injection of a cationic complex in a dose of 6?10.sup.13-1?10.sup.15 cm.sup.?3.

Claims

1. A ?-orbital semiconductor quantum cell from top to down comprising: an N-type ohmic contact electrode, an N-type ?-orbital semiconductor substrate, an N-type ?-orbital semiconductor epitaxy layer, a SiO.sub.2 passivation layer, a graphite contact layer, a Schottky contact electrode, a binding layer, and a radioisotope layer; wherein the N-type ?-orbital semiconductor substrate includes an organic semiconductor material with an aromatic group or a semiconductor material with a carbon-carbon bond; the N-type ?-orbital semiconductor epitaxy layer has a doping concentration of 1?10.sup.13-5?10.sup.14 cm.sup.?3 and is formed by injection of a cationic complex in a dose of 6?10.sup.13-1?10.sup.15 cm.sup.?3.

2. The ?-orbital semiconductor quantum cell as claimed in claim 1, wherein a thickness of the N-type ?-orbital semiconductor epitaxy layer is of 3-5 ?m.

3. The ?-orbital semiconductor quantum cell as claimed in claim 1, wherein the radioisotope layer includes Ni-63, Pu-238, Cm-244, Cm-242, U-235, or U-238.

4. The ?-orbital semiconductor quantum cell as claimed in claim 1, wherein the N-type ohmic contact electrode includes a graphite material.

5. The ?-orbital semiconductor quantum cell as claimed in claim 1, wherein the Schottky contact electrode includes Ni, Pt, Au, or graphite.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 shows the electromagnetic spectrum;

(2) FIG. 2 is a schematic diagram illustrating a quantum cell according to an embodiment of the present invention; and

(3) FIG. 3 is a sectional diagram illustrating the foregoing quantum cell.

DETAILED DESCRIPTION OF THE INVENTION

(4) The detailed description and preferred embodiments of the invention will be set forth in the following content, and provided for people skilled in the art so as to understand the characteristics of the invention.

(5) Referring to FIGS. 2 and 3, a quantum cell is disclosed in an embodiment of the present invention, and the cell comprises: an N-type ohmic contact electrode (1), an N-type ?-orbital semiconductor substrate (2), an N-type ?-orbital semiconductor epitaxy layer (3), a SiO.sub.2 passivation layer (4), a graphite contact layer (5), a Schottky contact electrode (6), a binding layer (7), and a radioisotope layer (8). The N-type ?-orbital semiconductor substrate (2) includes an organic semiconductor material with an aromatic group or a semiconductor material with a carbon-carbon bond. The N-type ?-orbital semiconductor epitaxy layer (3) has a doping concentration of 1?10.sup.13-5?10.sup.14 cm.sup.?3 and is formed by injection of a cationic complex in a dose of 6?10.sup.13-1?10.sup.15 cm.sup.?3.

(6) The N-type ?-orbital semiconductor substrate (2) is positioned on the N-type ohmic contact electrode (1), and has a doping concentration of 1?10.sup.18-7?10.sup.18 cm.sup.?3. In the embodiment, the N-type ohmic contact electrode (1) includes but not limited to a graphite material or a NiCrAu alloy.

(7) The N-type ?-orbital semiconductor epitaxy layer (3) is positioned on the N-type ?-orbital semiconductor substrate (2), has the doping concentration of 1?10.sup.13-5?10.sup.14 cm.sup.?3, and is formed by injection of the cationic complex in a dose of 6?10.sup.13-1?10.sup.15 cm.sup.?3. In the embodiment, a thickness of the N-type ?-orbital semiconductor epitaxy layer (3) is of but not limited to 3-5 ?m.

(8) The SiO.sub.2 passivation layer (4) is positioned on a part of the N-type ?-orbital semiconductor epitaxy layer (3).

(9) The graphite contact layer (5) and the Schottky contact electrode (6) are positioned on another part of the N-type ?-orbital semiconductor epitaxy layer (3). In the embodiment, the Schottky contact electrode (6) includes but not limited to Ni, Pt, or Au.

(10) The binding layer (7) is positioned on the Schottky contact electrode (6). In the embodiment, the binding layer (7) includes but not limited to a CrAu alloy.

(11) The radioisotope layer (8) is positioned on the graphite contact layer (5). In the embodiment, the radioisotope layer (8) includes but not limited to Ni-63, Pu-238, Cm-244, Cm-242, U-235, or U-238.

(12) It is noted that the method for forming each upper layer on the corresponding lower layer is not within the scope of the present invention, and can be understood by people skilled in the art. The forming method can be practiced via a well-known technique, for example physical deposition, chemical deposition, coating, soaking, chemical replacement, or spraying, so there is no need for further recitation.

(13) Based on the above mentioned structures, the deposition of the N-type ?-orbital semiconductor substrate (2) and the N-type ?-orbital semiconductor epitaxy layer (3) can lower the carrier concentration in the epitaxy layer, increase the width of a depletion region, and increase the collection efficiency for an electron-hole pair. In such a way, the open-circuit voltage and the conversion efficiency of the cell are enhanced.

(14) With the above features, the cell of the embodiment further has the following features:

(15) 1. Nuclear energy to electric energy conversion efficiency is of 10-30%.

(16) 2. A surface of the cell has a permissible radiation dose of less than 10 milliohm.

(17) 3. Gravimetric specific energy is approximately of 10-30 kWh/kg, and volumetric specific energy is approximately of 10-30 kWh/cm.sup.3.

(18) 4. An operating life is of 5-100 years under normal operation.

(19) 5. An overall performance ratio is 50-1,000 times as great as that of a traditional lithium battery.

(20) While the invention has been described in connection with what is considered the most practical and preferred embodiments, it is understood that this invention is not limited to the disclosed embodiments but is intended to cover various arrangements included within the spirit and scope of the broadest interpretation so as to encompass all such modifications and equivalent arrangements.