Abstract
A superconducting material having a strong magnetic-flux pinning by way of sites having high electronic effective mass and charge carrier density. The superconducting material involves a superconducting host material and a dopant pinning material being inert in relation to the superconducting host material and has a {square root over ()}/m* in a range less than that of the superconducting host material, the dopant pinning material doping the superconducting host material.
Claims
1. A superconducting material with a strong magnetic-flux pinning by way of sites having high electronic effective mass and charge carrier density, the superconducting material comprising: a superconducting host material; and a dopant pinning material being inert in relation to the superconducting host material, the dopant material having a ratio of a square root of an electronic resistivity to an effective mass in a range less than that of the superconducting host material when in a normal state at temperatures above approximately an upper critical field H.sub.c2(T), the dopant pinning material doping the superconducting host material, whereby effective pinning strength of a defect is enhanced.
2. The superconducting material of claim 1, wherein the dopant pinning material comprises an A-site ordered perovskite oxide, whereby the superconducting host material is configurable to exhibit heavy fermion behavior at pinning sites therein.
3. The superconducting material of claim 2, wherein the A-site ordered perovskite oxide comprises a form of ACu.sub.3B.sub.4O.sub.12.
4. The superconducting material of claim 3, wherein A comprises at least one of an alkaline earth metal, a rare-earth metal, and at least one other element of an alkali metal, yttrium, cadmium, scandium, and lanthanum.
5. The superconducting material of claim 3, wherein B comprises a transition metal.
6. The superconducting material of claim 3, wherein the A-site ordered perovskite oxide comprises ACu.sub.3Ru.sub.4O.sub.12, wherein A comprises one of Na, Ca, and La.
7. The superconducting material of claim 1, wherein the superconducting host material comprises a high-T.sub.c compound.
8. The superconducting material of claim 7, wherein the high-T.sub.c compound comprises at least one of YBa.sub.2Cu.sub.3O.sub.7- and any material having a compositional form of R.sub.1-yM.sub.yBa.sub.2Cu.sub.3-zT.sub.zO.sub.x, wherein 6x7, wherein 0y1, wherein 0z1, wherein R comprises at least one of a rare earth and calcium, wherein M comprises at least one of a rare earth distinct from that of R and calcium if absent from R, and wherein T comprises at least one of cobalt, iron, nickel, and zinc.
9. The superconducting material of claim 8, wherein the high-T.sub.c compound, comprising YBa.sub.2Cu.sub.3O.sub.7-, comprises YBa.sub.2Cu.sub.3O.sub.6.96.
10. The superconducting material of claim 1, wherein the superconducting host material comprises a plurality of superconducting material layers, each superconducting material layer of the plurality of superconducting material layers comprising a thickness in a range of approximately 5 lattice constants to approximately 20 lattice constants, and wherein the dopant pinning material comprises a thin interlayer disposed between each superconducting material layer of the plurality of superconducting material layers, the thin interlayer configurable as at least one of a top layer formed on each superconducting material layer and as separately formed interlayer, and the thin interlayer comprising a thickness in a range of approximately 1 lattice constant to approximately 10 lattice constants.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1) The above, and other, aspects, features, and benefits of several embodiments of the present disclosure are further understood from the following Detailed Description of the Drawing as presented in conjunction with the following several figures of the Drawing.
(2) FIG. 1 is a diagram illustrating a perspective view of a superconducting material having magnetic-flux pinning by way of sites having high electronic effective mass and charge carrier density, in accordance with an embodiment of the present disclosure.
(3) FIG. 2 is a diagram illustrating a perspective view of a lattice structure in the dopant pinning material, such as configured in a thin interlayer, in accordance with an embodiment of the present disclosure.
(4) FIG. 3 is a diagram illustrating a cross-sectional view of a superconducting material having a magnetic-flux pinning by way of sites having high electronic effective mass and charge carrier density, as shown in FIG. 2, in accordance with an embodiment of the present disclosure.
(5) FIG. 4 is flow diagram illustrating a method of synthesizing a superconducting material having a magnetic-flux pinning by way of sites having high electronic effective mass and charge carrier density, in accordance with an embodiment of the present disclosure
(6) FIG. 5 is a flow diagram illustrating a method of increasing a current-carrying capacity of a superconducting material by controlling the quantum fluctuations of vortices in the presence of a magnetic field, in accordance with an embodiment of the present disclosure.
(7) Corresponding reference numerals or characters indicate corresponding components throughout the several figures of the Drawing. Elements in the several figures are illustrated for simplicity and clarity and have not necessarily been drawn to scale. For example, the dimensions of some of the elements in the figures may be emphasized relative to other elements for facilitating understanding of the various presently disclosed embodiments. Also, common, but well-understood, elements that are useful or necessary in commercially feasible embodiment are often not depicted in order to facilitate a less obstructed view of these various embodiments of the present disclosure.
DETAILED DESCRIPTION OF THE EMBODIMENT(S)
(8) Referring to FIG. 1, this diagram illustrates, in a perspective view, a superconducting material 100 having magnetic-flux pinning by way of sites having high electronic effective mass m* and charge carrier density , in accordance with an embodiment of the present disclosure. The superconducting material 100 comprises: a superconducting host material 102 and a dopant pinning material 103 being inert in relation to the superconducting host material 102. Wherein the value of the relationship between the square root of the electronic resistivity, , and the effective mass, m* (/m*) is in a range less than that of the superconducting host material 102 The dopant pinning material 103 is used for doping the superconducting host material 102. The superconducting material 100 further comprises a substrate 101, wherein the substrate 101 comprises at least one of: aluminum oxide (Al.sub.2O.sub.3), magnesium oxide (MgO), magnesium aluminate (MgAl.sub.2O.sub.4), zinc oxide (ZnO), strontium titanate (SrTiO.sub.3), lanthanum aluminate (LaAlO.sub.3), lithium niobate (LiNbO.sub.3), neodynium gallate (NdGaO.sub.3), strontium lanthanum aluminate (SrLaAlO.sub.3), strontium lanthanum gallate (SrLaGaO.sub.3), ytterbium aluminate (YtAlO.sub.3), yttria-(Y.sub.2O.sub.3)-stabilized zirconia (ZrO.sub.2) (YSZ), or any other suitable substrate material. A suitable substrate material comprises at least one characteristic of: a structurally matching lattice interface, a melting point in a range of at least approximately 800 C., a non-reactive chemical composition, or at least one insulating electrical property.
(9) Still referring to FIG. 1A, the dopant pinning material 103 comprises an A-site ordered perovskite oxide, whereby the superconducting host material 102 is configurable to exhibit heavy fermion behavior at pinning sites therein. The A-site ordered perovskite oxide comprises a form of A copper rubidium oxide (ACu.sub.3Ru.sub.4O.sub.12), wherein A comprises at least one of an alkaline earth metal, a rare-earth metal, and at least one other element, such as an alkali metal, yttrium (Y), cadmium (Cd), scandium (Sc), and lanthanum (La), and wherein B comprises a transition metal. The superconducting host material 102 comprises a high-T.sub.c compound, wherein the high-T.sub.c compound comprises at least one of another form of yttrium barium copper oxide (YBa.sub.2Cu.sub.3O.sub.7-) and any material, such as a form of barium copper oxide having a compositional form of R.sub.1-yM.sub.yBa.sub.2Cu.sub.3-zT.sub.zO.sub.x, wherein 6x7, wherein 0y1, wherein 0z1, wherein R comprises at least one of a rare earth and calcium, wherein M comprises at least one of a rare earth distinct from that of R and calcium if absent from R, wherein T comprises at least one of cobalt (Co), iron (Fe), nickel (Ni), and zinc (Zn). The A-site ordered perovskite oxide comprises ACu.sub.3Ru.sub.4O.sub.12, wherein A comprises one of sodium (Na), calcium (Ca), and lanthanum (La). The high-T.sub.c compound, comprising YBa.sub.2Cu.sub.3O.sub.7-, comprises YBa.sub.2Cu.sub.3O.sub.6.96.
(10) Still referring to FIG. 1, the superconducting host material 102 comprises a plurality of superconducting material layers 102a, each superconducting material layer 102a of the plurality of superconducting material layers 102a comprising a thickness in a range of approximately 5 lattice constants to approximately 20 lattice constants, in accordance with an embodiment of the present disclosure. The dopant pinning material 103 comprises a thin interlayer 103a disposed between each superconducting material layer 102a of the plurality of superconducting material layers 102, the thin interlayer 103a configurable as at least one of a top layer formed on each superconducting material layer 102a and as separately formed interlayer, and the thin interlayer 103a comprising a thickness in a range of approximately 1 lattice constant to approximately 10 lattice constants.
(11) Still referring to FIG. 1, under the proper conditions, e.g., wherein the dopant pinning material 103 is chemically inert in relation to the superconducting host material 102, and wherein the ratio of {square root over ()}/m* of the dopant pinning material 103 is less than that of the superconducting host material 102, the materials, devices, and methods of the present disclosure are utilizable for increasing the current-carrying capacity, e.g., the critical current density, of any superconducting material of the present disclosure in at least one form, such as a bulk polycrystalline form, a single crystal form, and a thin film form, wherein m*=the electronic effective mass, and wherein =charge carrier density (FIG. 2).
(12) Still referring to FIG. 1, the superconducting materials of the present disclosure comprise properties, such as entering into an electronically ordered state, thereby supporting the transport of an electrical current without any dissipation of energy, e.g., the value of the electrical resistivity of the superconducting materials goes to zero when below a critical temperature T.sub.c. The superconducting materials of the present disclosure have strong magnetic flux pinning and are utilizable in numerous technological applications, whereby such technological applications will benefit or become viable with a sufficient increase over existing values in the related art.
(13) Referring to FIG. 2, this diagram illustrates, in a perspective view, a lattice structure 103b of the dopant pinning material 103, such as configured in the thin interlayer 103a, in accordance with an embodiment of the present disclosure. The superconducting host materials 102 of the present disclosure have strong magnetic flux pinning may comprise type-II superconductors capable of transferring to a mixed state, e.g., a flux line lattice, in a sufficiently strong magnetic field. The critical current in this state is determined by the pinning force, e.g., by a flux line lattice interaction with non-homogeneities of the superconducting materials. Two types of pinning-force dependence on the magnetic field exist. For strong pinning, the pinning-force dependence has a smooth, wide maximum at fields in a range of approximately 0.3H.sub.c2 to approximately 0.5H.sub.c2. For weak pinning, usually in a wide range of fields, the pinning force weakly depends on the magnetic field; and, only near H.sub.c2, the pinning force has a narrow and very high maximum, e.g., a peak effect is utilized.
(14) Referring to FIG. 3, this diagram illustrates, in a cross-sectional view, a superconducting material 100 having a strong magnetic-flux pinning by way of sites having high electronic effective mass m* and charge carrier density , as shown in FIG. 1, in accordance with an embodiment of the present disclosure. In accordance with embodiments of the present disclosure, the materials, devices, and methods generally involve a distinct manner of controlling the quantum fluctuations of vortices in order to realize a significant increase in the current-carrying capacity of a superconducting material in the presence of a magnetic field. Such control is performed by directly increasing the effective quantum mechanical mass of pinned magnetic vortices 200 through the introduction of non-reactive materials as point, line, and volume imperfections, e.g., Q{square root over (.sub.N)}/m*, wherein Q=the effective quantum mechanical mass, wherein .sub.N=charge carrier density within a vortex core V, and wherein m*=electronic effective mass within the vortex core V. In accordance with the present disclosure, the dopant pinning material 103 exhibit bulk properties of relatively low electronic resistivity, , and a large electronic effective mass, m*. To achieve an enhancement in the effective pinning strength of the defect, e.g., at a pinned magnetic vortex 200, the ratio of {square root over ()}/m*of the dopant pinning material 103 is less than that of the superconducting host material 102 in the normal state {square root over (.sub.N)}/m* at magnetic fields and temperatures above approximately the upper critical field H.sub.c2(T).
(15) Still referring to FIG. 2, in accordance with embodiments of the present disclosure, the materials, devices, and methods generally involve minimizing vortex excitations that arise from quantum fluctuations. In a high-T.sub.c superconductor, the strength of excitations from quantum fluctuations comprises comparable magnitude or even exceeds those of thermal fluctuations under certain circumstances. With the inclusion of a dopant material, such as the dopant pinning material 103, as a source of defects whose electronic properties are such that quantum fluctuations can be heavily suppressed, the materials, devices, and methods provide an enhancement of the critical current density by an order of magnitude beyond what is provided by the geometric suppression of thermal fluctuations alone, e.g., an enhanced pining pinning of the vortex core V in the thin interlayer 103a, the thin interlayer 103a comprising a heavy fermion layer, wherein heavy related relates to the quantum mechanical mass.
(16) Referring back to FIGS. 1, 2, and 3, in accordance with embodiments of the present disclosure, the materials, devices, and methods generally involve are useable for any combination of materials, wherein the dopant pinning material 103 comprises the following features: (1) inert in relation to the superconducting host material 102, and (2) {square root over ()}/m* is less than that of the superconducting host material 102. The use of the A-site ordered perovskite oxides of the form ACu.sub.3B.sub.4O.sub.12, wherein A comprises at least one of an alkaline earth metal, a rare-earth metal, and at least one other element, and wherein B comprises a transition metal, whereby superconducting host material 102 is configurable, by doping, by way of the dopant pinning material 103, to exhibit heavy fermion behavior as pinning sites, such as pinned magnetic vortices 200, therein, e.g., within a high-T.sub.c compound, such as YBa.sub.2Cu.sub.3O.sub.7-, wherein is a number in a range of approximately 0 to approximately 1. The materials, devices, and methods involve using heavy fermion compounds ACu.sub.3Ru.sub.4O.sub.12, wherein A comprises one of sodium (Na), calcium (Ca), and lanthanum (La). For comparison, in YBa.sub.2Cu.sub.3O.sub.6.96, the quantity {square root over (.sub.N)}/m* is approximately 1.8; and, in ACu.sub.3Ru.sub.4O.sub.12, wherein A comprises one of Na, Ca, La, the quantity {square root over ()}/m* is, respectively, approximately 0.11, approximately 0.22, and approximately 0.34.
(17) Still referring back to FIGS. 1, 2 and 3, in an embodiment, a superconducting material 100 comprises a multilayer film, the multilayer film comprising a plurality of superconducting host material layers 102a; and a thin interlayer 103a disposed between each superconducting host material layer 102a of the plurality of superconducting material host layers 102a, wherein the thin interlayer 103a is configurable as one of a top layer grown on each superconducting host material layer 102a and as separately formed thin interlayer 103a. A requirement for this approach is that the two materials, e.g., the dopant pining material 103 and the superconducting host material layer 102a, are structurally compatible as in relation to the foregoing fermion compounds.
(18) Still referring back to FIGS. 1, 2, and 3, in accordance with an embodiment of the present disclosure, a superconducting material 100 with a strong magnetic-flux pinning by way of sites, such as pinned magnetic vortices 200, having high electronic effective mass m* and charge carrier density , the superconducting material 100 comprises a superconducting host material 102; and a dopant pinning material 103 being inert in relation to the superconducting host material 102 and having a {square root over ()}/m* in a range less than that of the superconducting host material 102, the dopant pinning material 103 doping the superconducting host material 102.
(19) Still referring back to FIGS. 1, 2, and 3, in accordance with an embodiments of the present disclosure, the dopant pinning material comprises an A-site ordered perovskite oxide, whereby the superconducting host material is configurable to exhibit heavy fermion behavior as pinning sites therein, the A-site ordered perovskite oxide comprises a form of ACu.sub.3B.sub.4O.sub.12, A comprises at least one of an alkaline earth metal, a rare-earth metal, and at least one other element, B comprises a transition metal, the superconducting host material comprises a high-T.sub.c compound, the high-T.sub.c compound comprises YBa.sub.2Cu.sub.3O.sub.7-, the A-site ordered perovskite oxide comprises ACu.sub.3Ru.sub.4O.sub.12, A comprising one of Na, Ca, and La, and the high-T.sub.c compound, comprising YBa.sub.2Cu.sub.3O.sub.7-, comprises YBa.sub.2Cu.sub.3O.sub.6.96. The high-T.sub.c compound comprises at least one of YBa.sub.2Cu.sub.3O.sub.7- and any material having a compositional form of R.sub.1-yM.sub.yBa.sub.2Cu.sub.3-zT.sub.zO.sub.x, wherein 6x7, wherein 0y1, wherein 0z1, wherein R comprises at least one of a rare earth and calcium, wherein M comprises at least one of a rare earth distinct from that of R and calcium if absent from R, and wherein T comprises at least one of cobalt, iron, nickel, and zinc.
(20) Still referring back to FIGS. 1, 2, and 3, the present disclosure involves materials, devices, and methods for producing strong magnetic-flux pinning in superconducting materials, such as the superconducting material 100, by including sites, such as pinned magnetic vortices 200, having high electronic effective mass m* and charge carrier density . An approach of the present disclosure comprises countering vortex excitations resulting from quantum fluctuations. The superconducting materials 100 (high-T.sub.c materials) of the present disclosure have numerous potential applications for at least that the superconducting materials 100 achieve certain technological benchmarks, such as reaching a high critical current density, wherein the high critical current density is the maximum amount of electrical current that can be passed through a unit cross-sectional area of a superconducting material in a dissipation-less state.
(21) Still referring back to FIGS. 1, 2, and 3, in accordance with an embodiment of the present disclosure, the superconducting material 100 with a strong magnetic-flux pinning by way of sites, such as pinned magnetic vortices 200, having high electronic effective mass m* and charge carrier density , comprises: a superconducting host material 102 and a dopant pinning material 103 being inert in relation to the superconducting host material 102 and has a {square root over ()}/m* in a range less than that of the superconducting host material 102; and the dopant pinning material 103 doping the superconducting host material 102, wherein the dopant pinning material 103 is specifically configured, e.g., synthesized, whereby the superconducting material 100 overcomes many of the challenges in the related art, e.g., in a uniform material configured to increase pinning strength for vortices, such as pinned magnetic vortices 200, by way of structuring the functionality and ordering pinning sites in a superconducting host material 102.
(22) Referring to FIGS. 1, 2, 3 and 4, the present disclosure provides a method M1 of synthesizing a superconducting material 100 with a strong magnetic-flux pinning by way of sites having high electronic effective mass and charge carrier density, in accordance with an embodiment of the present disclosure. The method M1 comprises: providing a superconducting host material, as indicated by block 401; providing a dopant pinning material that is inert in relation to the superconducting host material and having a {square root over ()}/m* in a range less than that of the superconducting host material, as indicated by block 402; and doping the superconducting host material with the dopant pinning material, as indicated by block 403.
(23) Still referring to FIGS. 1, 2, 3 and 4, providing a dopant pinning material, as indicated by block 402, comprises providing an A-site ordered perovskite oxide, whereby the superconducting host material is configurable to exhibit heavy fermion behavior as pinning sites therein. Furthermore, providing the A-site ordered perovskite oxide comprises providing a form of ACu.sub.3B.sub.4O.sub.12, providing a form of ACu.sub.3B.sub.4O.sub.12 comprises providing A as at least one of an alkaline earth metal, a rare-earth metal, and at least one other element, providing a form of ACu.sub.3B.sub.4O.sub.12 comprises providing B as a transition metal. Providing the superconducting host material comprises providing a high-T.sub.c compound, providing the high-T.sub.c compound comprises providing YBa.sub.2Cu.sub.3O.sub.7-, providing the A-site ordered perovskite oxide comprises providing ACu.sub.3Ru.sub.4O.sub.12, wherein A comprises one of Na, Ca, and La, and providing the high-T.sub.c compound, comprising providing YBa.sub.2Cu.sub.3O.sub.7-, comprises providing YBa.sub.2Cu.sub.3O.sub.6.96. The high-T.sub.c compound comprises at least one of YBa.sub.2Cu.sub.3O.sub.7- and any material having a compositional form of R.sub.1-yM.sub.yBa.sub.2Cu.sub.3-zT.sub.zO.sub.x, wherein 6x7, wherein 0y1, wherein 0z1, wherein R comprises at least one of a rare earth and calcium, wherein M comprises at least one of a rare earth distinct from that of R and calcium if absent from R, and wherein T comprises at least one of cobalt, iron, nickel, and zinc.
(24) FIG. 5, discloses a method M2 of increasing a current-carrying capacity of a superconducting material by controlling the quantum fluctuations of vortices in the presence of a magnetic field, in accordance with an embodiment of the present disclosure. The method M2 comprises: providing a superconducting material with a strong magnetic-flux pinning, as indicated by block 500, which provides superconducting material that comprises: providing a superconducting host material as indicated by block 501; providing a dopant pinning material that is inert in relation to the superconducting host material and having a /m* in a range less than that of the superconducting host material, as indicated by block 502; and doping the superconducting host material with the dopant pinning material, as indicated by block 503; and directly increasing the effective quantum mechanical mass of pinned magnetic vortices by introducing at least one non-reactive material as at least one of a point defect, a line defect, and a volume defect, as indicated by block 504. The method M2 further comprises exposing the superconducting material to a magnetic field and a temperature above approximately an upper critical field H.sub.c2(T), as indicated by block 505, whereby an effective pinning strength of a defect is enhanced, thereby increasing the current-carrying capacity of the superconducting material.
(25) It is understood is that many additional changes in the details, materials, steps and arrangement of parts, which have been herein described and illustrated to explain the nature of the invention, may be made by those skilled in the art within the principle and scope of the invention as expressed in the appended claims.
