Method for fabricating substrate structure
11527491 · 2022-12-13
Assignee
Inventors
- Po-Hao Wang (Taichung, TW)
- Chun-Tang Lin (Taichung, TW)
- Shou-Qi Chang (Taichung, TW)
- Yu-Hsiang Hsieh (Taichung, TW)
Cpc classification
H01L2224/73204
ELECTRICITY
H01L2224/13101
ELECTRICITY
H01L2924/00012
ELECTRICITY
H01L2924/00014
ELECTRICITY
H01L2224/73204
ELECTRICITY
H01L24/97
ELECTRICITY
H01L2224/16225
ELECTRICITY
H01L2924/00014
ELECTRICITY
H01L2924/00012
ELECTRICITY
H01L2224/32225
ELECTRICITY
H01L2224/16225
ELECTRICITY
H01L2224/32225
ELECTRICITY
H01L2924/00
ELECTRICITY
H01L2224/13101
ELECTRICITY
H01L24/73
ELECTRICITY
H01L2924/00
ELECTRICITY
H01L23/49827
ELECTRICITY
International classification
H01L25/065
ELECTRICITY
H01L23/498
ELECTRICITY
Abstract
A substrate structure has an obtuse portion formed between a side surface and a bottom surface of a substrate body. The obtuse portion includes a plurality of turning surfaces to disperse the stress of the substrate body generated in the packaging process. Therefore, the substrate body is prevented from being cracked. A method for fabricating the substrate structure and an electronic package including the substrate structure are also provided.
Claims
1. A method for fabricating a substrate structure, comprising: providing a substrate module including a plurality of substrate bodies and a plurality of conductive bodies bonded to the substrate bodies; forming a first concave portion between any adjacent two of the substrate bodies, wherein the first concave portion is formed on the substrate bodies and free from being formed on the conductive bodies; forming at least one second concave portion in the first concave portion, the second concave portion having a maximum width less than a maximum width of the first concave portion; and cutting the substrate module along the second concave portion to separate the plurality of substrate bodies, wherein each of the separated substrate bodies includes a first surface, a second surface opposite to the first surface, a side surface adjoining the second surface, and an obtuse portion formed between the side surface and the first surface and including a plurality of turning surfaces formed by a wall of the first concave portion and a wall of the second concave portion, and wherein the obtuse portion extends along an edge of the first surface, and one of the turning surfaces adjoins the side surface.
2. The method of claim 1, wherein one of the obtuse portions is provided at a corner of a corresponding one of the substrate bodies.
3. The method of claim 1, wherein one of the obtuse portions includes two or three of the turning surfaces.
4. The method of claim 1, wherein the turning surfaces are disposed adjacent to one another.
5. The method of claim 1, wherein the second surface and the side surface adjoin vertically.
6. The method of claim 1, wherein the first concave portion is formed with a plurality of the second concave portions therein, and the second concave portions have maximum widths reduced according to an order of a fabrication process thereof.
7. The method of claim 1, further comprising forming an encapsulating material on at least one of the substrate bodies.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1)
(2)
(3)
(4)
(5)
(6)
DETAILED DESCRIPTION OF THE EMBODIMENTS
(7) The disclosure is described by the following specific embodiments. Those with ordinary skills in the arts can readily understand other advantages and functions of the disclosure after reading the disclosure of this specification. The disclosure may also be practiced or applied with other different implementations. Based on different contexts and applications, the various details in this specification can be modified and changed without departing from the spirit of the disclosure.
(8) It should be noted that the structures, ratios, sizes shown in the drawings appended to this specification are to be construed in conjunction with the disclosure of this specification in order to facilitate understanding of those skilled in the art. They are not meant, in any ways, to limit the implementations of the disclosure, and therefore have no substantial technical meaning. Without affecting the effects created and objectives achieved by the disclosure, any modifications, changes or adjustments to the structures, ratio relationships or sizes, are to be construed as fall within the range covered by the technical contents disclosed herein. Meanwhile, terms, such as “above”, “first”, “second”, “third”, “a”, “one” and the like, are for illustrative purposes only, and are not meant to limit the range implementable by the disclosure. Any changes or adjustments made to their relative relationships, without modifying the substantial technical contents, are also to be construed as within the range implementable by the disclosure.
(9)
(10) The substrate body 21 can be a semiconductor material, and includes a first surface 21a, a second surface 21b opposite to the first surface 21a, and a side surface 21c adjoining the second surface 21b. The second surface 21b and the side surface 21c are joined to each other at a right angle, and an obtuse portion A is formed between the side surface 21c and the first surface 21a. In an embodiment, the obtuse portion A is defined with a plurality of (e.g., two) turning surfaces 210 and 211.
(11) In an embodiment, the substrate body 21 is, but not limited to, a silicon chip or a Through-Silicon Interposer (TSI), and the substrate body 21 is, but not limited to, in the form of a strip or singulated.
(12) Furthermore, the substrate body 21 can be a board in any geometric shape, such as rectangle (shown in
(13) Moreover, the obtuse portion A adjoins the first surface 21a, without adjoining the second surface 21b, and the turning surfaces 210 and 211 are planar oblique faces. The turning surface 211 adjoins the side surface 21c, and the turning surface 210 adjoins the first surface 21a. As shown in
(14) The range of the obtuse portion A can be selected according to needs. The ranges of the turning surfaces 210 and 211 can also be selected according to needs. In an embodiment, the total height H of the turning surfaces 210 and 211 is 61.6 μm, the total width T of the turning surfaces 210 and 211 is 50.8 μm, the height h of the turning surface 210 is 16.1 μm, and the width t of the turning surface 211 is 22.5 μm. The number of turning surfaces are not limited to two, and the obtuse portion A may be defined with three turning surfaces, such as turning surfaces 210, 211, 212 shown in
(15) The conductive bodies 25 can be a circuit layer (not shown), inner conductive pillars (not shown), conductive bumps (such as those shown in
(16) In an embodiment, each of the conductive bodies 25 includes a metal pillar 25a and a solder material 25b provided on the metal pillar 25a.
(17) Referring to
(18) As shown in
(19) In an embodiment, the substrate module 3 is, but not limited to, a silicon wafer (including or not including the conductive bodies 25), or a package structure without singulation (such as a package structure including an underfill 400, a first substrate 21 and a second substrate 42, which will be described later, and which may include or not include the conductive bodies 25).
(20) As shown in
(21) In an embodiment, there are various ways for making the first and second concave portions 30 and 31, including mechanical cutting, ultrasound polishing, chemical-mechanical polishing (CMP), laser, water jet cutter, isotropic/anisotropic etching, dry/wet etching, or a combination of the above processes. In the case of mechanical cutting, cutting tools with two or more angles can be used.
(22) The first and second concave portions 30 and 31 can have a variety of different appearances, and are not limited to the triangular cross-sectional shapes shown in
(23) Moreover, if a plurality of second concave portions 31 are formed in the first concave portion 30, the maximum widths D of these second concave portions 31 decrease with the order in which they are fabricated, so as to form more turning surfaces.
(24) Furthermore, the depths of the concave portions define the range of the obtuse portion A. It can be appreciated that the more concave portions that are formed (e.g., more cutters with different blade angles), the more the appearance of the obtuse portion A looks like an arc. More specifically, according to experiments, two or three turning surfaces meets practical demands, and can be achieved by cutting tools.
(25) As shown in
(26) Accordingly, in the substrate structure 2 according to the disclosure, the obtuse portion A is formed between the side surface 21c and the first surface 21a of the substrate body 21, such that the edges of the surface of the substrate body 21 are obtuse instead of acute, thus eliminating the issue of stress concentration due to right angles. Therefore, with the design of the turning surfaces 210 and 211 on the substrate structure 2 according to the disclosure, the stress created during subsequent packaging process can be dispersed, and stress concentrating around corners (or other places) of the substrate body 21 can be eliminated. As a result, the substrate structure 2 is less likely to have cracks after packaging, thereby increasing the product yield.
(27)
(28) The carrier 43 can be made of a metal, ceramic or organic material, and is used as a package substrate, and the first substrate 41 and the second substrate 42 are semiconductor materials. The second substrate 42 is used as a TSI and is placed directly on and electrically connected with the carrier 43, while the first substrate 41 is used as an electronic element and is bonded to and electrically connected with the second substrate 42.
(29) In an embodiment, the carrier 43 is a substrate with a core layer and a circuit structure or a coreless circuit structure such as a fan-out redistribution layer (RDL). It can be appreciated that the carrier 43 can be used as, but not limited to, a carrier unit (e.g., a leadframe) for carrying other electronic elements (e.g., a chip).
(30) In an embodiment, the first substrate 41 is an electronic element, such as an active element, a passive element or a combination of both. In another embodiment, the active element can be a semiconductor chip, and the passive element can be a resistor, a capacitor or an inductor.
(31) In another implementation (not shown), the first substrate 41 (e.g., the electronic element) can be directly placed on the carrier 43, without the intermediate second substrate 62 (e.g., the TSI) disposed.
(32) Moreover, the obtuse portion A including the plurality of turning surfaces 210 and 211 can be optionally formed on the first substrate 41 and/or the second substrate 42. It can be appreciated that the size of the first substrate 41 is very small, such that the appearance of the obtuse portion A formed thereon approximates an arc shape.
(33) The conductive bodies 25 are bonded to the first substrate 41 and the second substrate 42 for electrically connecting the first substrate 41, the second substrate 42 and the carrier 43.
(34) The encapsulating material 40 is formed on the carrier 43 to encapsulate the first substrate 41 and the second substrate 42.
(35) In an embodiment, the encapsulating material 40 includes an underfill 400 and an encapsulant 401. The underfill 400 is formed between the first substrate 41 and the second substrate 42 and between the second substrate 42 and the carrier 43, and the encapsulant 401 is formed on the carrier 43 to encapsulate the underfill 400, the first substrate 41 and the second substrate 42.
(36) Accordingly, the electronic package 4 according to the disclosure allows stress on the first substrate 41 and the second substrate 42 created during formation of the encapsulating material 40 to be dispersed through the design of the turning surfaces 210 and 211 (or the obtuse portion A), eliminating the issue of stress being concentrated at the corners of the first substrate 41 and the second substrate 42, and preventing cracks from occurring in the first substrate 41 and the second substrate 42 during the packaging process, thereby increasing the product yield.
(37) Therefore, the turning surfaces 210 and 211 (or the obtuse portion A) disclosed can be located as required. For example, they can be located at places on the substrate body 21 where stress concentration is prone to occur during the fabrication processes of the substrate structure 2, thereby avoiding cracks to be formed on the substrate body 21. For example, the obtuse portion A is located at each of the corners of the substrate body 21, or even along the edges of the first surface 21a, such as that shown in
(38) In summary, the substrate structure, the electronic package having the substrate structure, and the method for fabricating the substrate structure in accordance with the disclosure alleviate stress concentration and thus increases the product yield through the provision of the turning surfaces.
(39) The above embodiments are only used to illustrate the principles of the disclosure, and should not be construed as to limit the disclosure in any way. The above embodiments can be modified by those with ordinary skill in the art without departing from the scope of the disclosure as defined in the following appended claims.