Tunnel junctions for multijunction solar cells

Abstract

Tunnel junctions for multijunction solar cells are provided. According to an aspect of the invention, a tunnel junction includes a first layer including p-type AlGaAs, a second layer including n-type GaAs, wherein the second layer is a quantum well, and a third layer including n-type AlGaAs or n-type lattice matched AlGaInP. The quantum well can be GaAs or AlxGaAs with x being more than about 40%, and lattice matched GaInAsNSb in the Eg range of from about 0.8 to about 1.4 eV.

Claims

1. A tunnel junction in a multijunction solar cell comprising, in order: a first layer comprising p-type AlGaAs; a second layer comprising n-type GaAs, wherein the second layer is a quantum well; and a third layer comprising n-type AlGaAs, wherein the concentration of Al in the third layer is at least 50%; and wherein the second layer and the third layer are doped with Se, Si, Te or any combination thereof at a concentration of from about 1×10.sup.18 cm.sup.−3 to about 1×10.sup.20 cm.sup.−3.

2. The tunnel junction of claim 1, wherein a concentration of Al in the first layer is selected from the group consisting of at least 40%, at least 50%, and at least 60%.

3. The tunnel junction of claim 1, further comprising additional adjacent layers selected from the group consisting of AlInGaP, AlGaAs, GaAs, GaInP, GaInAsP, InGaAsSb, InGaAsNSb, InP, InGaAs, InAlAs, GaAsSb, AlAsSb, GaInAsSb, and GaInAsP.

4. The tunnel junction of claim 1, wherein the second layer quantum well is selected from the group consisting of Al.sub.xGaAs, or GaInAsNSb wherein x is at less than 40%.

5. The tunnel junction of claim 1, wherein the thickness of the second layer is from about 1 nm to about 20 nm.

6. The tunnel junction of claim 1 that is operable up to about 1000× sun.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 depicts the structure of a tunnel junction according to an exemplary embodiment of the invention.

(2) FIG. 2A depicts a multijunction cell containing a tunnel junction according to an exemplary embodiment of the invention. FIG. 2B depicts the quantum efficiency (QE) of multijunction cells according to exemplary embodiments of the invention as a function of wavelength.

(3) FIG. 3 depicts the effect of varying the Aluminum concentration on current density in a multijunction cell having a 12 nm thick n-GaAs QW doped with carbon at about 7×10″ cm.sup.−3 and having 30% AlGaAs on the n-side according to exemplary embodiments of the invention. As depicted, tunneling probability decreases beyond about 60% Aluminum concentration in p-Al.sub.xGa.sub.1-xAs.

(4) FIG. 4 depicts the effect of varying GaAs QW n-type thickness where there is a 60% concentration of Aluminum on the p-side and a 50% concentration of Aluminum on the n-side according to exemplary embodiments of the invention. As depicted, the AlGaAs n-side barrier plays a role in the overall tunneling process with the farther that the layer is from the tunnel junction, the better the overall tunnel diode, for example.

(5) FIG. 5 depicts the effect of varying Aluminum concentration on the n-side barrier of a tunnel junction having a 12 nm thick n-GaAs QW doped with carbon at about 7×10″ cm.sup.−3 and having a 60% AlGaAs:C on the p-side.

(6) FIG. 6 depicts the effect of the AlGaAs barrier on current density versus voltage of a cell having 12 nm thick n-GaAs QW doped with carbon at about 7×10″ cm.sup.−3 and having a 60% AlGaAs:C on the p-side with a AlGaAs barrier and of a cell that does not have a AlGaAs barrier. As depicted, the AlGaAs barrier contributes to the overall tunneling process.

(7) FIG. 7A depicts a multijunction cell containing tunneling junctions according to an exemplary embodiment of the invention where the middle cell and top cell were grown at 750° C. The morphology of AlInP is improved when grown at 750° C. as compared to 600° C. FIG. 7B depicts current density versus voltage of various multijunction cells containing an AlInP based tunneling junction according to an exemplary embodiment of the invention and having 12 nm thick n-GaAs QW doped with carbon at about 7×10″ cm.sup.−3 and having a 60% AlGaAs:C on the p-side.

(8) FIG. 8 depicts another embodiment of a multijunction cell containing a transparent tunneling junctions according to an exemplary embodiment of the invention where the middle cell and top cell were grown at 750° C.

(9) FIG. 9A is a schematic representation of a six junction inverted metamorphic (IMM) solar cell incorporating QWTJs as disclosed herein. FIG. 9B is a diagram of bandgaps vs. lattice constants for various layers of the six junction inverted metamorphic solar cell of FIG. 9A.

DETAILED DESCRIPTION

(10) The present invention relates to tunnel junctions for multijunction solar cells. In particular, the tunnel junctions may be highly transparent, and may be used in III-V compound semiconductor-based multijunction solar cells.

(11) FIG. 1 depicts the structure of a tunnel junction according to an exemplary embodiment of the invention. The tunnel junction is a quantum-well tunnel junction (QWTJ) diode that is nearly transparent to incident solar energy in the full solar spectrum and with sufficient peak tunneling current density to allow operation at up to and over 1000× sun concentration. These tunnel diodes include heavily doped alternating high bandgap p-type and n-type cladding layers (AlGaAs with >40% Al) with a thin (<12 nm) sandwiched n-type GaAs quantum-well layer. Historically, AlGaAs-based n-side layers have been avoided in tunnel junctions due to the difficulty in achieving high n-type doping (high bandgap) and due to the formation of deep level recombination centers.

(12) Exemplary embodiments of the present invention provide tunnel junctions having several features. For example, the quantum-well (QW) design allows for high peak-tunneling current without the need for very high degenerate doping (>1×10.sup.19 cm.sup.−3) in the n-type (Al)GaAs layer, which is even a bigger challenge on A-miscut substrates. Also, unlike related art GaInP-based (p-AlGaAs/GaAs/n-GaInP) tunnel junctions, the p-AlGaAs/n-GaAs/n-AlGaAs structure depicted in FIG. 1 offers better transparency in comparison to direct bandgap GaInP layers. It is noted that AlGaAs with >40% Al becomes an indirect bandgap semiconductor.

(13) In an embodiment, transparent tunneling junctions disclosed herein are more transparent than GaInP based tunneling junctions. In another embodiment, transparent tunneling junctions disclosed herein allow for higher current density without the necessity of degenerate n-doping. In an embodiment, multijunction cells having tunneling junctions disclosed herein can tolerate thermal loads with growth temperatures up to and in excess of 750° C.

(14) Further, the AlGaAs/GaAs/AlGaAs QWTJ in accordance with exemplary embodiments of the invention offers easier composition tunability in comparison to related art AlGaAs/GaAs/GaInP based QWTJs, which require more complex As—P hetero-interface switching besides lattice-matching constraints. In addition, the structure depicted in FIG. 1 allows tunnel junction operation with only a single QW, unlike multiple QW-based designs in related art. Although the QW depicted in FIG. 1 is made of GaAs, the QW could be made of any suitable material, such as InAs. In another embodiment, the QW is GaAs or AlGaAs where x is less than 40%. In yet another embodiment, the QW is lattice matched GaInAsNSb in the Eg range of from about 0.8 to about 1.4 eV.

(15) Without being bound by theory, because exemplary embodiments of the invention use lattice-matched alloys, a strain balanced QWTJ design is not necessary in some embodiments. Further, the structure shown in FIG. 1 could be extended to other alloy families on GaAs (AlInGaP, AlGaAs, GaAs, GaInP, GaInAsP, InGaAsSb, InGaAsNSb, etc.) and InP (InGaAs, InAlAs, GaAsSb, AlAsSb, GaInAsSb, GaInAsP, etc.) Although the present QWTJ is designed for inverted multijunction solar cells, the design could also be applied to upright-grown multijunction solar cells.

(16) Most reports on related art tunnel junction diodes are for standalone test structures, and usually only show one-sun operation. Exemplary embodiments of the present invention show operation up to and over 1000× sun, and these tunnel junctions appear to tolerate a thermal budget of 3-junction solar cells with growth temperatures reaching 750° C.

(17) In an embodiment, a p-type AlGaAs layer is carbon doped in the range of from 1×10.sup.18 to 1×10.sup.20 cm.sup.−3. In another embodiment, a QW layer is n-doped with Se. In an embodiment, a n-side layer (AlGaAs or AlGaInP) is n-doped with Si, or Se, or Te or a combination thereof.

(18) In another embodiment, a QW is GaAs, Al.sub.xGaAs, or GaInAsNSb where x is less than 40%.

(19) In an embodiment, the layers of the TJ are lattice-matched within about 0.2% misfit.

(20) In another embodiment, the thickness of the barrier layers is between about 10 to about 60 nm.

(21) In an embodiment, the TJ can be used under any solar spectrum including AM 0, AM 1.5 g, and AM 1.5 d. In another embodiment, the TJ structure can be used under any concentration of sunlight.

(22) In an embodiment, the TJ structure can be grown in either the n-side first or p-side first direction.

(23) Embodiments of the TJ structure disclosed herein can be used in other optoelectronic devices such as LEDs and lasers, for example.

(24) In an embodiment, the substrate is miscut toward the A plane by 0 to about 15 degrees. In an embodiment, the substrate is miscut toward the B plane by 0 to about 15 degrees. In an embodiment, the substrate is miscut toward the AB plane by 0 to about 15 degrees.

(25) In an embodiment, multijunction solar cells that incorporate quantum well tunnel junctions are disclosed herein. Six junction IMM solar cells are grown by metal organic vapor phase epitaxy (MOVPE) on (001) GaAs substrates miscut 6° toward the (111) A direction. The 6° A miscut substrates were used primarily to promote disordering to achieve a high bandgap in the top junction. Growth of the structure progresses in an inverted direction as depicted in FIG. 9A. After growth of a GaInP, etch stop and GaInNAs:Se top contact layer, the high-bandgap first “reverse heterojunction” cell composed of a 3% to 6% Al AlGaInP emitter and an 18% Al AlGaAsInP base is grown at 750° C. The lower aluminum content in the emitter allows relatively low emitter sheet resistance. A transparent Al.sub.0.6Ga.sub.0.4As tunnel junction with a thin GaAs quantum well was included after each of the first three lattice-matched junctions. The 1.7 eV Al.sub.0.6Ga.sub.0.4As junction was also grown at 750° C., but subsequent junctions are grown at lower temperatures.

(26) Compositionally graded buffers (CGB) sequentially transitioned the lattice constant from 5.655 Å (GaAs) to 5.888 Å (beyond InP) for three Ga.sub.xIn.sub.1-xAs junctions with bandgaps of 1.16, 0.94, and 0.70 eV as depicted in FIG. 9B. The first two CGB were composed of Al.sub.xGa.sub.1-x-yIn.sub.yAs with about x=50% Al to maintain transparency and reduce roughness. GaInP was not used for these first two CGBs since it would tend to phase separate on the 6° A substrates. The material stability and dislocation glide dynamics were improved through ordering that was promoted by 2° B miscut substrates. At lattice constants close to InP, phase stability of Al.sub.xGa.sub.1-x-yIn.sub.yAs becomes problematic, while the Ga.sub.xIn.sub.1-xP becomes more stable. Thus, in an embodiment, the third, and final, CGB was composed initially of Ga.sub.xIn.sub.1-xP with x=20% to 0%, and then InP.sub.1-ySb.sub.y with y=0% to 3%. In an embodiment, the last two tunnel junctions used were metamorphic tunnel junctions composed of Se-doped GaInAs and C-doped GaAsSb with the same lattice constant as the fourth and fifth Ga.sub.xIn.sub.1-xAs junctions.

(27) In an embodiment, the IMM devices were processed with front and back electroplated gold contacts, attached to a silicon handle with low-viscosity epoxy. Mesa isolation was accomplished with selective chemical etchants. Concentrator grids where used with finger spacing of 125-350 microns for approximately 0.10 cm.sup.2 illuminated area devices. An e-beam evaporated 4-layer ZnS/MgF.sub.2/ZnS/MgF.sub.2 antireflective coating was used for relatively broadband performance.

(28) The foregoing disclosure has been set forth merely to illustrate the invention and is not intended to be limiting. Since modifications of the disclosed embodiments incorporating the spirit and substance of the invention may occur to persons skilled in the art, the invention should be construed to include everything within the scope of the appended claims and equivalents thereof.