Power amplifier module
10298191 ยท 2019-05-21
Assignee
Inventors
Cpc classification
H03F1/0261
ELECTRICITY
H03F2203/21142
ELECTRICITY
H03F2203/21106
ELECTRICITY
G05F1/56
PHYSICS
H03F2200/408
ELECTRICITY
H03F2200/18
ELECTRICITY
H03F2200/222
ELECTRICITY
H03F2200/387
ELECTRICITY
H03G3/3042
ELECTRICITY
International classification
H03F1/02
ELECTRICITY
G05F1/56
PHYSICS
Abstract
In a power amplifier module for performing slope control of a transmitting signal, a gain variation due to a variation in battery voltage is suppressed while suppressing an increase in circuit size. The power amplifier module includes: a first regulator for outputting a first voltage corresponding to a control voltage for controlling a signal level; a second regulator for outputting a second voltage that rises as a battery voltage drops; a first amplifier supplied with the first voltage as a power-supply voltage to amplify an input signal and output an amplified signal; and a second amplifier for amplifying the amplified signal, wherein the second amplifier includes a first amplification unit supplied with the second voltage as the power-supply voltage to amplify the amplified signal, and a second amplification unit supplied with the battery voltage as the power-supply voltage to amplify the amplified signal.
Claims
1. A power amplifier module comprising: a first amplifier for amplifying an input signal and outputting an amplified signal; a second amplifier for amplifying the amplified signal; and a bias control circuit for increasing a bias voltage to be supplied to the second amplifier as a battery voltage drops, wherein the second amplifier includes a first amplification unit supplied with an output voltage that rises as the battery voltage drops as a power-supply voltage to amplify the amplified signal, and a second amplification unit supplied with the battery voltage as the power-supply voltage to amplify the amplified signal.
2. The power amplifier module according to claim 1, further comprising: an inverting amplifier circuit for inversely amplifying a first current corresponding to the battery voltage to output a second current, and a low drop-out regulator for outputting the output voltage based on the second current.
3. The power amplifier module according to claim 1, wherein the second amplifier is a multi-finger transistor, and the first amplification unit of the second amplifier is composed of one or more fingers of the multi-finger transistor, and the second amplification unit of the second amplifier is composed of remaining one or more fingers of the multi-finger transistor.
4. The power amplifier module according to claim 2, wherein the second amplifier is a multi-finger transistor, and the first amplification unit of the second amplifier is composed of one ore more fingers of the multi-finger transistor, and the second amplification unit of the second amplifier is composed of remaining one or more fingers of the multi-finger transistor.
5. The power amplifier module according to claim 1, wherein a signal output by the second amplifier varies 1.0 dB or less when the power-supply voltage drops from 4.7 V to 3.6 V.
6. The power amplifier module according to claim 1, wherein a signal output by the second amplifier varies 0.6 dB or less when the power-supply voltage drops from 4.7 V to 3.6 V.
7. The power amplifier module according to claim 1, wherein a signal output by the second amplifier varies 0.4 dB or less when the power-supply voltage drops from 4.7 V to 3.6 V.
8. The power amplifier module according to claim 1, wherein the power amplifier module does not perform a loop control by detecting a level of an output of the second amplifier for adjusting the output voltage.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
DESCRIPTION OF AN EXAMPLE EMBODIMENT
(10) Embodiments of the present disclosure will be described below with reference to the accompanying drawings.
(11) As illustrated in
(12) The modulation unit 110 modulates an input signal based on a GSM modulation system to generate a radio frequency (RF) signal in order to perform radio transmission. For example, the RF signal ranges from about hundreds of MHz to about several GHz. Note that the embodiments will be described based on the GSM modulation system, but the application range of the present disclosure is not limited thereto.
(13) The power amplifier module 120 amplifies the power of the RF signal (RF.sub.IN) to a level necessary for transmission to a base station, and outputs the amplified signal (RF.sub.OUT). Further, the power amplifier module 120 controls gain based on control voltage V.sub.RAMP for controlling the signal level to perform slope control of the amplified signal.
(14) The front-end unit 130 performs filtering on the amplified signal, switching to a received signal received from the base station, and the like. The amplified signal output from the front-end unit 130 is transmitted to the base station through the antenna 140.
(15)
(16) The amplifiers 200 to 202 constitute a three-stage amplifier circuit. The amplifier 200 amplifies an input RF signal and outputs the amplified signal. The amplifier 201 (first amplifier) amplifies the RF signal output from the amplifier 200 and outputs the amplified signal. The amplifier 202 (second amplifier) amplifies the RF signal output from the amplifier 201 and outputs the amplified signal. Each of the amplifiers 200 to 202 includes a multi-finger transistor such as an HBT (Heterojunction Bipolar Transistor) as an amplifying element. The voltage V.sub.ADJ is supplied as the power-supply voltage to an amplification unit 270 (first amplification unit) as one part of the amplifier 202 (as some fingers), and the battery voltage V.sub.DD is supplied as the power-supply voltage to an amplification unit 271 (second amplification unit) as the other part of the amplifier 202 (as some other fingers). The matching circuits 220 to 223 are provided before and behind the amplifiers 200 to 202 to match the impedance between the circuits, respectively.
(17) The bias circuits 230 to 232 supply bias voltages V.sub.BIAS1 V.sub.BIAS3 to the bases of transistors that constitute the amplifiers 200 to 202, respectively. The bias voltages V.sub.BIAS1 and V.sub.BIAS2 supplied from the bias circuits 230 and 231 are controlled by the bias control circuit 240. Further, the bias voltage V.sub.BIAS3 supplied from the bias circuit 232 is controlled by a bias control circuit 280 included in the regulator 260.
(18) The bias control circuit 240 outputs bias control voltage V.sub.CTRL1 for controlling the bias voltages V.sub.BIAS1 and V.sub.BIAS2 supplied from the bias circuits 230 and 231. The bias control circuit 240 outputs, for example, a predetermined level of bias control voltage V.sub.CTRL1 irrespective of the battery voltage V.sub.DD.
(19) The regulator 250 (first regulator) outputs voltage V.sub.LDO (first voltage) corresponding to the control voltage V.sub.RAMP based on the battery voltage V.sub.DD. The voltage V.sub.LDO is supplied as the power-supply voltage to the collectors of the transistors that constitute the amplifiers 200 and 201 through the inductors 210 and 211. In the power amplifier module 120, the voltage V.sub.LDO is adjusted according to the control voltage V.sub.RAMP to perform slope control.
(20) The regulator 260 (second regulator) outputs voltage V.sub.ADJ (second voltage) that rises as the battery voltage V.sub.DD drops. The voltage V.sub.ADJ is supplied as the power-supply voltage to the collector of the amplification unit 270 of the amplifier 202 through the inductor 213. The regulator 260 includes the bias control circuit 280. The bias control circuit 280 outputs bias control voltage V.sub.CTRL2 for controlling the bias voltage V.sub.BIAS3 based on the battery voltage V.sub.DD. Specifically, the bias control circuit 280 adjusts the bias control voltage V.sub.CTRL2 to increase the bias voltage V.sub.BIAS3 as the battery voltage V.sub.DD drops.
(21)
(22) The control voltage V.sub.RAMP is applied to the non-inverting input terminal of the operational amplifier 300, and the inverting input terminal and the output terminal are connected. In other words, the operational amplifier 300 acts as a voltage follower for outputting the control voltage V.sub.RAMP. The control voltage V.sub.RAMP output from the operational amplifier 300 is applied to the inverting input terminal of the operational amplifier 301. The output terminal of the operational amplifier 301 is connected to the gate of the p-channel MOSFET 310. The battery voltage V.sub.DD is applied to the source of the p-channel MOSFET 310. One end of the resistor 320 is connected to the non-inverting input terminal of the operational amplifier 301, and the other end is grounded. One end of the resistor 321 is connected to the non-inverting input terminal of the operational amplifier 301, and the other end is connected to the drain of the p-channel MOSFET 310. The operational amplifier 301, the p-channel MOSFET 310, and the resistors 320 and 321 constitute an LDO regulator, and voltage V.sub.LDO corresponding to the control voltage V.sub.RAMP is output from the drain of the p-channel MOSFET 310.
(23)
(24) Reference voltage V.sub.REF is applied to the non-inverting input terminal of the operational amplifier 400. The battery voltage V.sub.DD is applied to one end of the resistor 430, and the other end of the resistor 430 is connected to one end of the resistor 431. Then, the other end of the resistor 431 is grounded. Voltage V.sub.DIV (third voltage) corresponding to the battery voltage V.sub.DD is generated at the connecting point between the resistors 430 and 431. The voltage V.sub.DIV is applied to one end of the resistor 432, and the other end of the resistor 432 is connected to the inverting input terminal of the operational amplifier 400. One end of the resistor 433 is connected to the inverting input terminal of the operational amplifier 400, and the other end of the resistor 433 is connected to the output terminal of the operational amplifier 400. The operational amplifier 400 and the resistors 430 to 433 constitute an inverting amplifier circuit to output voltage V.sub.INV (fourth voltage) obtained by inversely amplifying the voltage V.sub.DIV. In other words, the voltage V.sub.INV rises as the battery voltage V.sub.DD drops.
(25) The adder circuit 410 outputs bias control voltage V.sub.CTRL2 obtained by adding a predetermined level of voltage to the voltage V.sub.INV. Note that the adder circuit 410 is provided to adjust the voltage V.sub.INV to a level for controlling the bias circuit 232. Since the voltage V.sub.INV rises as the battery voltage V.sub.DD drops, the bias control voltage V.sub.CTRL2 also rises as the battery voltage V.sub.DD drops.
(26) The bias control voltage V.sub.CTRL2 output from the adder circuit 410 is applied to the inverting input terminal of the operational amplifier 401. The output terminal of the operational amplifier 401 is connected to the gate of the p-channel MOSFET 420. The battery voltage V.sub.DD is applied to the source of the p-channel MOSFET 420. One end of the resistor 434 is connected to the non-inverting input terminal of the operational amplifier 401, and the other end is grounded. One end of the resistor 435 is connected to the non-inverting input terminal of the operational amplifier 401, and the other end of the resistor 435 is connected to the drain of the p-channel MOSFET 420. The operational amplifier 401, the p-channel MOSFET 420, and resistors 434 and 435 constitute an LDO regulator, and voltage V.sub.ADJ corresponding to the bias control voltage V.sub.CTRL2 is output from the drain of the p-channel MOSFET 420. Since the bias control voltage V.sub.CTRL2 rises as the battery voltage V.sub.DD drops, the voltage V.sub.ADJ also rises as the battery voltage V.sub.DD drops.
(27) In the power amplifier module 120 having the configuration illustrated in
(28) Thus, in the power amplifier module 120, the size of the p-channel MOSFET 310 that forms part of the regulator 250 can be reduced compared with the configuration in which the voltage V.sub.LDO is supplied to the third stage amplifier 202 as the power-supply voltage. Further, in the power amplifier module 120, the voltage V.sub.ADJ supplied to the amplification unit 270 of the third stage amplifier 202 rises as the battery voltage V.sub.DD drops. Therefore, a gain variation due to a drop in battery voltage V.sub.DD can be suppressed.
(29) Further, in the power amplifier module 120, the bias control circuit 280 outputs bias control voltage V.sub.CTRL2 that rises as the battery voltage V.sub.DD drops. This causes the bias voltage V.sub.BIAS3 supplied to the third stage amplifier 202 to rise as the battery voltage V.sub.DD drops. Therefore, a gain variation due to a drop in battery voltage V.sub.DD can be suppressed.
(30) Referring to
(31)
(32)
(33)
(34) According to the simulation results in
(35)
(36)
(37) According to the simulation results in
(38) As described above, according to the embodiment, the voltage V.sub.ADJ that rises as the battery voltage V.sub.DD drops is supplied as the power-supply voltage to the amplification unit 270 as one part of the third stage amplifier 202, and the battery voltage V.sub.DD is supplied as the power-supply voltage to the amplification unit 271 as the other part of the third stage amplifier 202. According to such a configuration, the size of the p-channel MOSFET 310 in the regulator 250 for the first stage amplifier 200 and the second stage amplifier 201 can be reduced. Further, a gain variation due to a variation in battery voltage V.sub.DD can be suppressed without necessarily performing loop control using a coupler. Therefore, the gain variation due to the variation in battery voltage can be suppressed while suppressing an increase in circuit size.
(39) Further, according to the embodiment, the bias voltage V.sub.BIAS3 that rises as the battery voltage V.sub.DD drops is supplied to the third stage amplifier 202. In such a configuration, the gain variation due to the variation in battery voltage can also be suppressed while suppressing an increase in circuit size.
(40) The above-described embodiments are intended to facilitate the understanding of the present disclosure, and not to limit the disclosure. The present disclosure can be modified and improved without departing from the spirit of the disclosure, and equivalents shall be included in the present disclosure.
(41) For example, either or both of the power-supply voltage and the bias voltage supplied to the third stage amplifier 202 may be controlled according to the battery voltage in the power amplifier module 120.
DESCRIPTION OF REFERENCE NUMERALS
(42) 100 transmitting unit 110 modulation unit 120 power amplifier module 130 front-end unit 140 antenna 200 to 202 amplifier 210 to 213 inductor 220 to 223 matching circuit 230, 231, 232 bias circuit 240, 280 bias control circuit 250, 260 regulator 270, 271 amplification unit 300, 301, 400, 401 operational amplifier 310, 420 p-channel MOSFET 320, 321, 430 to 435 resistor 410 adder circuit