Dynamic impedance system for an increased range of operation of an instrument transformer
10298208 · 2019-05-21
Assignee
Inventors
Cpc classification
G01R22/00
PHYSICS
International classification
H01F27/42
ELECTRICITY
Abstract
A dynamic impedance system deployable on a current transformer having a core and at least one winding element is provided. The dynamic impedance system includes a voltage reference module and a dynamic impedance module operably connected to one another. The voltage reference module defines a voltage threshold for regulating an output voltage of the current transformer. The dynamic impedance module regulates the output voltage based on the voltage threshold defined by the voltage reference module to maintain flux induced in the current transformer, thereby avoiding core saturation of the current transformer and enhancing accuracy of measurements.
Claims
1. A dynamic impedance system deployable on a current transformer, the dynamic impedance system comprising: a voltage reference module configured to define a voltage threshold for regulating an output voltage of the current transformer; and a dynamic impedance module configured to regulate the output voltage based on the voltage threshold defined by the voltage reference module to maintain flux induced in the current transformer, wherein the dynamic impedance module is configured as a variable load for the current transformer.
2. The dynamic impedance system of claim 1, wherein the voltage reference module defines the voltage threshold based on one or more properties associated with the current transformer.
3. The dynamic impedance system of claim 1, wherein the voltage reference module comprises at least one diode selected based on the voltage threshold.
4. The dynamic impedance system of claim 1, wherein the dynamic impedance module comprises at least one power transistor in operable communication with the voltage reference module and selected based on the voltage threshold.
5. A dynamic impedance system deployable on a current transformer, the dynamic impedance system comprising: a voltage reference module configured to define a voltage threshold for regulating an output voltage of the current transformer; and a dynamic impedance module configured to regulate the output voltage based on the voltage threshold defined by the voltage reference module to maintain flux induced in the current transformer, wherein the voltage reference module defines the voltage threshold based on one or more properties associated with the current transformer, wherein the one or more properties comprise a material of a core of the current transformer, a material of a winding element of the current transformer, a geometry of the core, a geometry of the winding element, a saturation limit of the core, and the output voltage of the current transformer.
6. The dynamic impedance system of claim 5, wherein the voltage reference module comprises at least one diode selected based on the voltage threshold.
7. The dynamic impedance system of claim 5, wherein the dynamic impedance module comprises at least one power transistor in operable communication with the voltage reference module and selected based on the voltage threshold.
8. A current transformer comprising: a core; at least one winding element; and a dynamic impedance system in operable communication with the at least one winding element, wherein the dynamic impedance system comprises: a voltage reference module configured to define a voltage threshold for regulating an output voltage of the current transformer; and a dynamic impedance module configured to regulate the output voltage based on the voltage threshold defined by the voltage reference module to maintain flux induced in the current transformer, wherein the dynamic impedance module is configured as a variable load for the current transformer.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1) The foregoing and other aspects of the present disclosure are best understood from the following detailed description when read in connection with the accompanying drawings. For the purpose of illustrating the disclosure, it is understood that scope of the present disclosure is not limited to the specific instrumentalities disclosed. Included in the drawings are the following Figures:
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(6) The foregoing summary, as well as the following detailed description, is better understood when read in conjunction with the appended drawings. For the purpose of illustrating the disclosure, exemplary constructions are shown in the drawings. However, the disclosure is not limited to the specific methods and structures disclosed herein. The description of a device or a structure referenced by a numeral in a drawing is applicable to the description of that device or structure shown by that same numeral in any subsequent drawing herein.
DETAILED DESCRIPTION
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where: core flux, I.sub.Pprimary current, N.sub.Pnumber of turns of the primary, I.sub.Ssecondary current, N.sub.Snumber of turns of the secondary coil, Rreluctance of the magnetic core, r.sub.bburden resistance posed by the dynamic impedance module 201B, r.sub.Coilresistance of the secondary coil and frequency of excitation. Thus, with change in I.sub.P, the dynamic impedance system changes r.sub.b in order to regulate flux . This is done by regulating the voltage across the burden V.sub.burden where the governing equation of the flux also is:
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where line frequency, V.sub.burden is the secondary voltage, that is, voltage across the dynamic impedance system 201 due to secondary current I.sub.S, r.sub.Coilresistance of a coil of the secondary winding element 204, and N.sub.Snumber of turns of the coil of the secondary winding element 204. In the above equation, the flux is near independent of the primary current I.sub.P. The dependence is limited to a negligible drop across r.sub.Coil. The coil resistance r.sub.Coil is in the order of ohms and hence, increase in drop across coil resistance r.sub.Coil is therefore, negligible. Thus, flux is regulated irrespective of an increase in the primary current I.sub.P.
(11)
V.sub.threshold=V.sub.Zener+V.sub.BE
(12) With this a proportional current flows on the collector of Q5 increasing the V.sub.GS voltage of the MOSFETs Q8 and Q9. As this V.sub.GS voltage increases, the R.sub.DS of the MOSFETs decrease. As R.sub.DS decreases additional current is drawn from the source, thereby, increasing drop across r.sub.Coil, that is, the secondary winding element 204. This results, in a decrease in the voltage across the Zener diodes D7, D10, and D13, and therefore the V.sub.BE of the PNP transistor Q5, thereby reducing, the collector current of Q5 and V.sub.GS voltage of the MOSFETs Q8 and Q9. As this V.sub.GS voltage decreases, the R.sub.DS of the MOSFETs increases thereby reducing current drawn from the source. This in turn reduces the drop across r.sub.Coil, that is, the secondary winding element 204 thus, bringing back the operation state to an original state. This thus completes the control exerted by the dynamic impedance system 201 thereby limiting the output voltage of the current transformer 200. The additional current is mainly drawn by the MOSFETs Q8 and Q9 which are power devices and hence, are capable of handling larger power as compared to the Zener diodes D7, D10, and D13. The operation explained here is for the positive cycle operation and the negative cycle operation is the same with polarities reversed where the Zener diodes D6, D9, and D12 along with the PNP transistor Q10 and MOSFETs Q6 and Q7 come into operation.
(13) Thus, the dynamic impedance module 201B employs power MOSFETs Q7, Q8, Q9, and Q10, as dynamic burden resistors and regulates output voltage across the current transformer 200 by changing V.sub.GS of the MOSFETs in comparison to the voltage threshold set using high precision low power Zener diodes D7, D10, D13, D6, D9, and D12. By dynamically changing the burden resistor and thereby drawing additional current from the source, an additional voltage drop across source impedance is created which acts as a negative feedback control system for the current transformer 200 thereby avoiding flux increase and saturation of core 202.
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(16) It is to be understood that the elements and features recited in the appended claims may be combined in different ways to produce new claims that likewise fall within the scope of the present disclosure. Thus, whereas the dependent claims appended below depend from only a single independent or dependent claim, it is to be understood that these dependent claims may, alternatively, be made to depend in the alternative from any preceding or following claim, whether independent or dependent, and that such new combinations are to be understood as forming a part of the present specification.
(17) While the present disclosure has been described above by reference to various embodiments, it may be understood that many changes and modifications may be made to the described embodiments. It is therefore intended that the foregoing description be regarded as illustrative rather than limiting, and that it be understood that all equivalents and/or combinations of embodiments are intended to be included in this description.