Cu-MoTi ETCHING SOLUTION

Abstract

A CuMoTi etching solution is provided. The CuMoTi etching solution includes 5 to 30 wt % of an oxidant, 3 to 15 wt % of an acid, 3 to 15 wt % of an inorganic salt, and the balance deionized water. The oxidant is selected from hydrogen peroxide or persulfuric acid. The acid is selected from polycarboxylic acids, amino acids, or inorganic acids. The inorganic salt is selected from diammonium hydrogen phosphate or ammonium dihydrogen phosphate.

Claims

1. A CuMoTi alloy etching solution, comprising: 5 to 30 wt % of an oxidant, 3 to 15 wt % of an acid, 3 to 15 wt % of an inorganic salt, and the balance deionized water; wherein the oxidant is selected from peroxy group-containing compounds, the acid is a polycarboxylic acid, and the inorganic salt is selected from ammonium phosphate salts; wherein the peroxy group-containing compounds are selected from hydrogen peroxide or its derivatives, the ammonium phosphate salts are selected from the group consisting of ammonium dihydrogen phosphate, diammonium hydrogen phosphate, and ammonium phosphate, and the polycarboxylic acids are selected from the group consisting of a malic acid and a citric acid.

2. The etching solution according to claim 1, wherein the CuMoTi etching solution further comprises 0.01 to 5 wt % of a metal chelating agent, the metal chelating agent is selected from the group consisting of an acminocarboxylate chelating agent, a hydroxycarboxylic acid chelating agent, a tartaric acid, a polyphosphate chelating agent, and a polycarboxylic acid chelating agent.

3. The etching solution according to claim 2, wherein the metal chelating agent is selected from the group consisting of ethylenediaminetetraacetic acid, hydroxyethyl ethylenediamine triacetic acid, polyacrylic acid, and polymethacrylic acid.

4. The etching solution according to claim 1, wherein the CuMoTi etching solution further comprises 0.01 to 5 wt % of a stabilizing agent.

5. The etching solution according to claim 4, wherein the stabilizing agent is phenyl urea.

6. A CuMoTi alloy etching solution, comprising: 5 to 30 wt % of an oxidant, 3 to 15 wt % of an acid, 3 to 15 wt % of an inorganic salt, and the balance deionized water; wherein the oxidant is selected from peroxy group-containing compounds, and the inorganic salt is selected from ammonium phosphate salts

7. The etching solution according to claim 6, wherein the peroxy group-containing compounds are selected from hydrogen peroxide or its derivatives.

8. The etching solution according to claim 6, wherein the ammonium phosphate salts are selected from the group consisting of ammonium dihydrogen phosphate, diammonium hydrogen phosphate, and ammonium phosphate.

9. The etching solution according to claim 6, wherein the acid is selected from the group consisting of a polycarboxylic acid, an amino acid, and an inorganic acid.

10. The etching solution according to claim 9, wherein the acid is a polycarboxylic acid.

11. The etching solution according to claim 10, wherein the polycarboxylic acids is selected from a malic acid or a citric acid, the amino acid is selected from glycine or alanine, and the inorganic acid is selected from phosphoric acid or sulfuric acid.

12. The etching solution according to claim 6, wherein the CuMoTi etching solution further comprises 0.01 to 5 wt % of a metal chelating agent, the metal chelating agent is selected from the group consisting of an acminocarboxylate chelating agent, a hydroxycarboxylic acid chelating agent, a tartaric acid, a polyphosphate chelating agent, and a polycarboxylic acid chelating agent.

13. The etching solution according to claim 12, wherein the metal chelating agent is selected from the group consisting of ethylenediaminetetraacetic acid, hydroxyethyl ethylenediamine triacetic acid, polyacrylic acid, and polymethacrylic acid.

14. The etching solution according to claim 6, wherein the CuMoTi etching solution further comprises 0.01 to 5 wt % of a stabilizing agent.

15. The etching solution according to claim 14, wherein the stabilizing agent is phenyl urea.

Description

DESCRIPTION OF DRAWINGS

[0030] The preferred embodiments being adopted by this disclosure to achieve the above and other objectives can be best understood by referring to the following detailed description of the preferred embodiments and the accompanying drawings as detailed below.

[0031] FIGS. 1A and 1B are microscopic view of an etching effect of a CuMoTi alloy etching solution described in Example 8 of the disclosure.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

[0032] The specific details disclosed herein are merely representative and are intended to describe the purpose of the exemplary embodiments of this disclosure. This disclosure may be embodied in many and may not be construed as limited to the embodiments set forth herein.

Embodiment 1. CuMoTi Etching Solution

[0033] In this embodiment, the disclosure provides a CuMoTi etching solution, which comprises 5 to 30 wt % of an oxidant, 3 to 15 wt % of an acid, 3 to 15 wt % of an inorganic salt, and the balance deionized water.

Embodiment 2. Selection and Optimization of an Amount of the Oxidant

[0034] In this embodiment, a selection and dosage of the oxidant is optimized. In consideration of a cost control and a risk control of an etching process, hydrogen peroxide and persulfate are used as oxidants.

[0035] It has been verified that when a concentration of the hydrogen peroxide is less than 5 wt %, the obtained CuMoTi alloy etching solution has a short effective period. When a concentration of the hydrogen peroxide is greater than 30 wt %, a danger of the obtained CuMoTi alloy etching solution has potential safety hazards in operation. In this embodiment, a concentration of the oxidant is determined to range from 5 to 30%. In addition, considering an etching effect and a manufacturing cost, hydrogen peroxide is selected as the oxidant in an amount of 8-12%.

Embodiment 3. Selection and Optimization of an Amount of the Acid

[0036] In this embodiment, a selection and dosage of the acid is optimized. In consideration of the cost control and the risk control of an etching process, a polycarboxylic acid, an amino acid or an inorganic acid is selected as a component of the CuMoTi alloy etching solution according to the disclosure. In comprehensive consideration of safety and cost, it is determined that the acid contained in the CuMoTi alloy etching solution of the disclosure is selected form the group consisting of malic acid, citric acid, phosphoric acid, sulfuric acid, glycine or a combination thereof.

[0037] It has been experimentally proved that the citric acid can provide a good acidic environment for the etching process, and simultaneously has advantages of high safety and low cost.

[0038] A concentration of citric acid is determined to be in the range of 3 to 15%, preferably 5 to 10%, in consideration of the etching effect and the manufacturing cost.

Embodiment 4. Selection and Optimization of an Amount of the Inorganic Salt

[0039] In this embodiment, a selection and dosage of the inorganic salt is optimized. The inorganic salt acts as a buffer in the CuMoTi alloy etching solution according to the disclosure. In comprehensive consideration of safety and cost, it is determined that the inorganic salt contained in the CuMoTi alloy etching solution of the disclosure is selected from ammonium phosphate salts. The ammonium phosphate salts are selected from the group consisting of ammonium dihydrogen phosphate, diammonium hydrogen phosphate, and ammonium phosphate. In consideration of the etching effect and the manufacturing cost, it is determined that the inorganic salt is ammonium dihydrogen phosphate or diammonium hydrogen phosphate in a concentration of 3 to 15%, preferably 5 to 10%.

Embodiment 5. Optimized CuMoTi Etching Solution A

[0040] In this embodiment, an optimized CuMoTi alloy etching solution A is provided. The optimized CuMoTi alloy etching solution A comprises 8 to 12 wt % hydrogen peroxide, 5 to 10 wt % citric acid, 5 to 10 wt % diammonium hydrogen phosphate, and the balance deionized water. The above components are mixed uniformly to obtain the CuMoTi etching solution A.

Embodiment 6. Optimized CuMoTi Etching Solution B

[0041] In this embodiment, an optimized CuMoTi alloy etching solution B is provided. The optimized CuMoTi alloy etching solution B comprises 8 to 12 wt % hydrogen peroxide, 5 to 10 wt % citric acid, 5 to 10 wt % diammonium hydrogen phosphate, 0.01 to 5 wt % phenylurea, and the balance deionized water. The phenylurea acts as a stabilizing agent. The CuMoTi etching solution B can be used for an etching process of a plurality of glass substrates.

Embodiment 7. Optimized CuMoTi Etching Solution C

[0042] In this embodiment, an optimized CuMoTi alloy etching solution C is provided. The optimized CuMoTi alloy etching solution B comprises 8 to 12 wt % hydrogen peroxide, 5 to 10 wt % citric acid, 5 to 10 wt % diammonium hydrogen phosphate, 0.01 to 5 wt % of a metal chelating agent, and the balance deionized water. The metal chelating agent is selected from the group consisting of an acminocarboxylate chelating agent, a hydroxycarboxylic acid chelating agent, a tartaric acid, a polyphosphate chelating agent, and a polycarboxylic acid chelating agent. The CuMoTi etching solution C can be used for an etching process of a plurality of glass substrates.

Embodiment 8

[0043] In this embodiment, an optimized CuMoTi alloy etching solution D is provided and a preparation method is as follows. A 4.8 g citric acid, a 13.2 g diammonium hydrogen phosphate, a 0.3 g phenyl urea and 200 ml mass fraction of 10% hydrogen peroxide are weighed. The above components are mixed uniformly to obtain the CuMoTi etching solution.

The CuMoTi etching solution D is applied to an etching process of CuMoTi alloys to obtain microscopic images as shown in FIGS. 1A and 1B. Referring to FIG. 1A, an etched CuMoTi wire has a perfect slope angle of about 30. Referring to FIG. 1B, a top surface of the etched CuMoTi wire has no molybdenum residue.

[0044] This disclosure has been described with preferred embodiments thereof, and it is understood that many changes and modifications to the described embodiment can be carried out without departing from the scope and the spirit of the invention.