Methods for working and sensing synthetic quartz glass substrate

Abstract

A synthetic quartz glass substrate having front and back surfaces is worked by lapping, etching, mirror polishing, and cleaning steps for thereby polishing the front surface of the substrate to a mirror-like surface. The etching step is carried out using a hydrofluoric acid solution at pH 4-7.

Claims

1. A method for sensing a synthetic quartz glass substrate with a photoelectric sensor having emitter and receiver sections, said method comprising the steps of: introducing into a position to be sensed by the photoelectric sensor a synthetic quartz glass substrate having a mirror-like front surface and a non- mirror-like back surface, which has been provided through a method comprising, in the recited order, the steps of lapping, etching, mirror polishing, and cleaning a synthetic quartz glass substrate material having front and back surfaces, wherein, in the etching step, etching of the front and back surfaces of the synthetic quartz glass substrate is performed with hydrofluoric acid or buffered hydrofluoric acid at pH 4 to 7, and, in the mirror polishing step, mirror polishing is performed to make only the front surface mirror-like; and sensing the substrate by emitting input light from the emitter section to one surface of the substrate, and receiving with the receiver section output light out of the opposite surface of the substrate wherein the working method further comprises a heat treatment step between the etching step and the mirror polishing step, a temperature of the heat treatment being in a range of 600 to 1,200 C. and a heating rate is in a range of 100 to 300 C./hr.

2. The method for sensing a synthetic quartz glass substrate of claim 1, wherein the back surface of the synthetic quartz glass substrate material at the end of lapping step has a surface roughness (Ra) of 0.1 to 0.2 m.

3. The method for sensing a synthetic quartz glass substrate of claim 1, wherein the back surface of the synthetic quartz glass substrate material at the end of etching step has a surface roughness (Ra) of 0.15 to 0.25 m.

4. The method for sensing a synthetic quartz glass substrate of claim 1, wherein the back surface of the synthetic quartz glass substrate material at the end of mirror polishing step has a surface roughness (Ra) of 0.15 to 0.25 m.

5. The method for sensing a synthetic quartz glass substrate of claim 1, wherein the front surface of the synthetic quartz glass substrate material at the end of mirror polishing step has a surface roughness (Ra) of 0.1 to 0.8 nm, which is less than the surface roughness (Ra) of the back surface.

6. The method for sensing a synthetic quartz glass substrate of claim 1, wherein the cleaning step includes cleaning with 0.1 to 2% by weight hydrofluoric acid and/or pure water while applying ultrasonic wave in an intermediate or high frequency band to the front and back surfaces of the substrate material.

7. The method for sensing a synthetic quartz glass substrate of claim 1, wherein the working method further comprises, after the cleaning step, the step of forming a thin film on the back surface of the synthetic quartz glass substrate material by vapor deposition.

8. A method for sensing a synthetic quartz glass substrate with a photoelectric sensor having emitter and receiver sections, said method comprising the steps of: providing a synthetic quartz glass substrate having a mirror-like front surface and a non-mirror-like back surface through a method comprising the steps, in the recited order, of lapping, etching, mirror polishing, and cleaning a synthetic quartz glass substrate material having front and back surfaces, wherein, in the etching step, etching of the front and back surfaces of the synthetic quartz glass substrate is performed with hydrofluoric acid or buffered hydrofluoric acid at pH 4 to 7, and, in the mirror polishing step, mirror polishing is performed to make only the front surface mirror-like; introducing into a position to be sensed by the photoelectric sensor the synthetic quartz glass substrate having one mirror-like surface; and sensing the substrate by emitting input light from the emitter section to one surface of the substrate, and receiving with the receiver section output light out of the opposite surface of the substrate, wherein the working method further comprises a heat treatment step between the etching step and the mirror polishing step, a temperature of the heat treatment being in a range of 600 to 1,200 C. and a heating rate is in a range of 100 to 300 C./hr.

9. The method for sensing a synthetic quartz glass substrate of claim 8, wherein the back surface of the synthetic quartz glass substrate material at the end of lapping step has a surface roughness (Ra) of 0.1 to 0.2 m.

10. The method for sensing a synthetic quartz glass substrate of claim 8, wherein the back surface of the synthetic quartz glass substrate material at the end of etching step has a surface roughness (Ra) of 0.15 to 0.25 m.

11. The method for sensing a synthetic quartz glass substrate of claim 8, wherein the back surface of the synthetic quartz glass substrate material at the end of mirror polishing step has a surface roughness (Ra) of 0.15 to 0.25 m.

12. The method for sensing a synthetic quartz glass substrate of claim 8, wherein the front surface of the synthetic quartz glass substrate material at the end of mirror polishing step has a surface roughness (Ra) of 0.1 to 0.8 nm, which is less than the surface roughness (Ra) of the back surface.

13. The method for sensing a synthetic quartz glass substrate of claim 8, wherein the cleaning step includes cleaning with 0.1 to 2% by weight hydrofluoric acid and/or pure water while applying ultrasonic wave in an intermediate or high frequency band to the front and back surfaces of the substrate material.

14. The method for sensing a synthetic quartz glass substrate of claim 8, wherein the working method further comprises, after the cleaning step, the step of forming a thin film on the back surface of the synthetic quartz glass substrate material by vapor deposition.

Description

DESCRIPTION OF PREFERRED EMBODIMENTS

(1) The method for working or processing a synthetic quartz glass substrate having front and back surfaces according to the invention involves at least lapping, etching, mirror polishing, and cleaning steps for thereby polishing the front surface of lo the substrate to a mirror-like surface. The invention is characterized in that hydrofluoric acid or buffered hydrofluoric acid at pH 4 to 7 is used in the etching step.

(2) The starting substrate is a synthetic quartz glass substrate. From the aspect of inhibiting the substrate from chipping and cracking, it is preferred that a synthetic quartz glass substrate has been chamfered and mirror finished at the edge.

(3) In the lapping step, the front and back surfaces of the substrate are preferably lapped on a double-side lapping machine using a lapping slurry based on alumina grains, specifically with a grit size of #800 to #1500, more specifically #1000 to #1200, until a surface roughness necessary for etching is reached. From the aspects of enabling substrate detection like silicon wafers and inhibiting particle generation, the back surface of the substrate at the end of lapping step should preferably have a surface roughness (Ra) of 0.1 to 0.2 m, more preferably 0.13 to 0.16 m, as measured according to JIS D-1601.

(4) The subsequent etching step is carried out on the front and back surfaces of the substrate in order to facilitate sensing and particle removal. The etchant used in the etching step is hydrofluoric acid or buffered hydrofluoric acid at pH 4 to 7, preferably pH 4.5 to 7.0. Below pH 4, the zeta potentials on particles and synthetic quartz glass substrate surface are of opposite signs, indicating difficult removal of particles. Above pH 7, the etching rate is extremely retarded. Specifically, 5 to 25 wt % hydrofluoric acid aqueous solution or buffered hydrofluoric acid containing 5 to 40 wt % ammonium fluoride and 5 to 25 wt % hydrogen fluoride may be used at a pH level in the above range. From the aspects of sensor light blocking and definite sensing, the back (or rough) surface of the substrate at the end of etching step should preferably have a surface roughness (Ra) of 0.15 to 0.25 m, more preferably 0.19 to 0.24 m, as measured according to JIS D-1601.

(5) If desired, heat treatment is carried out between the etching step and the mirror polishing step. Since later deposition and annealing steps generally involve elevated temperature, this heat may cause to develop glass debris which will shed from the rough surface side. Previous heat treatment is effective for minimizing the development of glass debris during the later deposition and annealing steps and therefore, reducing the number of dust particles generated on the final product. From the aspect of development of sufficient glass debris by heat treatment, the ultimate temperature of heat treatment is preferably in a range of 600 to 1,200 C., more preferably 900 to 1,200 C. The heating rate is not particularly limited. From the aspect of development of sufficient glass debris, the heating rate is preferably 100 to 300 C./hr, more preferably 200 to 300 C./hr. The holding time at the ultimate temperature is not particularly limited. From the aspect of development of sufficient glass debris, the holding time is preferably 5 to 30 minutes, more preferably 10 to 30 minutes.

(6) Next, with the back surface of the synthetic quartz glass substrate kept intact, the front surface is mirror polished on a single-side polishing machine. If abrasive grains are moved around and anchored to the rough surface side, the anchored grains are removed with difficulty during the subsequent cleaning step and can be a dust source. For this reason, colloidal silica is used as the abrasive.

(7) From the aspects of sensor light blocking and definite sensing, the back (or rough) surface of the substrate at the end of single-side polishing step should preferably have a surface roughness (Ra) of 0.15 to 0.25 m, more preferably 0.19 to 0.24 m, as measured according to JIS D-1601. The front surface of the substrate at the end of single-side polishing step should preferably have a surface roughness (Ra) of 0.1 to 0.8 nm, more preferably 0.1 to 0.4 nm, which is less than the surface roughness (Ra) of the back surface.

(8) The final cleaning step is carried out on the front and back surfaces of the substrate and may be either dip type cleaning or single-wafer spin cleaning. The single-wafer spin cleaning is preferred from the aspect of preventing particles (removed from the rough surface side) from moving around to the mirror-like surface side. Specifically, the synthetic quartz glass substrate is cleaned, especially spin cleaned with 0.1 to 2% by weight hydrofluoric acid and/or pure water while ultrasonic wave in an intermediate frequency band (78 to 430 kHz) or a high frequency band, i.e., megasonic band (500 kHz to 5 MHz) is applied to the front and back surfaces of the substrate. This is followed by spin drying.

(9) A thin film may be deposited on the back (or rough) surface of the substrate by a vapor deposition technique, e.g., evaporation or CVD, if desired for increasing the percent light blockage and achieving definite sensing. Typical of the thin film are a Si film, Al film and Ti film having a thickness of 0.2 to 1.0 m.

(10) The planar shape of the synthetic quartz glass substrate thus worked is not particularly limited and may be either rectangular or circular. Also the substrate is not particularly limited in size although it preferably has a diagonal length or diameter of 50 to 300 mm. The synthetic quartz glass substrate having one mirror-like surface may have any appropriate thickness, preferably 0.1 to 30 mm, more preferably 0.15 to 10 mm, and even more preferably 0.3 to 1.2 mm.

(11) Another embodiment of the invention is a method for sensing a synthetic quartz glass substrate in a semiconductor apparatus, the semiconductor apparatus being equipped with a photoelectric sensor having emitter and receiver sections. The synthetic quartz glass substrate having one mirror-like surface, obtained as above, is introduced into the semiconductor apparatus. Then the sensor is operated such that the emitter section may emit input light to one surface of the substrate and the receiver section may receive output light from the other surface, for thereby sensing the substrate.

EXAMPLE

(12) Examples of the invention are given below by way of illustration and not by way of limitation.

Example 1

(13) A synthetic quartz glass substrate having an outer diameter of 200 mm and a thickness of 1 mm was furnished as the starting substrate having rough surfaces and chamfered/mirror-finished edges. The substrate was lapped on a double-side lapping machine using a lapping slurry based on alumina grains of #1200, to roughen its front and back surfaces. The front and back surfaces of the synthetic quartz glass substrate at the end of lapping had a surface roughness (Ra) of 0.10 m, as measured according to JIS D-1601.

(14) Subsequent to the lapping step, the substrate on its front and back surfaces was etched with hydrofluoric acid (HF) aqueous solution at pH 4.0 for 5 minutes. The front and back surfaces of the substrate at the end of etching had a surface roughness (Ra) of 0.15 m, as measured according to JIS D-1601.

(15) Next, the front surface of the substrate was polished on a single-side polishing machine using 40 wt % colloidal silica as polishing slurry. The front surface of the substrate at the end of polishing had a surface roughness (Ra) of 0.15 nm, as measured according to JIS D-1601. On measurement, the back surface of the substrate had a surface roughness (Ra) of 0.15 m.

(16) Thereafter, while megasonic wave at 1.5 MHz was applied to the front and back surfaces of the substrate, the substrate was spin cleaned with 0.5 wt % hydrofluoric acid, cleaned with pure water, and spin dried. Finally, a silicon film of 1 m thick was deposited on the rough surface of the substrate by CVD.

(17) The synthetic quartz glass substrate having one mirror-like surface, thus obtained, was examined by the following tests, with the results shown in Table 1.

(18) [Dust Evaluation]

(19) In a clean plastic case for silicon wafers, synthetic quartz glass substrates having one mirror-like surface, which had been worked as above, and synthetic quartz glass substrates having both mirror-like surfaces, which had been confirmed for cleanliness, were alternately and horizontally inserted (the latter substrate being disposed adjacent to the rough surface of the former substrate). The case was packed with total 20 substrates, with each set of two substrates, and tightly closed with a lid.

(20) The case was subjected to vibration at an acceleration of 0.75 G and a frequency of 20 Hz for 30 minutes according to JIS Z-0232: method of vibration test on packaged freights. Dust particles dropped from the back (or rough) surface of the upper glass substrate having one mirror-like surface onto the opposed surface of the lower glass substrate having both mirror-like surfaces. The number of dust particles dropped was visually counted by projecting light under 200,000 lux in a darkroom. An average count was 8.9 particles.

(21) For comparison sake, the plastic case was packed with glass substrates by the same procedure as above except that synthetic quartz glass substrates having both mirror-like surfaces, which had been confirmed for cleanliness, were inserted instead of the synthetic quartz glass substrates having one mirror-like surface. After the same vibration test, the count of dust particles dropping from the back surface of the upper glass substrate having both mirror-like surfaces onto the opposed surface of the lower glass substrate having both mirror-like surfaces was 8.5 particles on average. With respect to dust transfer count, the glass substrates having one mirror-like surface and the glass substrates having both mirror-like surfaces as reference showed a difference of no significance.

(22) [Sensing Test]

(23) Using a combination of emitter FS-V21X (950 nm) and receiver FS-V22X from Keyence Corp., it was examined whether or not a synthetic quartz glass substrate was detectable with light of wavelength 950 nm.

(24) The term detectable means that the glass substrate is recognized because light is fully blocked by the glass substrate without being transmitted to the receiver side. The term undetectable means that the glass substrate is not recognized because light is transmitted to the receiver side and not fully blocked by the glass substrate.

(25) With the relevant wavelength, the presence or absence of a synthetic quartz glass substrate in this Example was detectable at an acceptable sensitivity.

Example 2

(26) A synthetic quartz glass substrate having one mirror-like surface was obtained as in Example 1 except that the starting substrate was lapped on a double-side lapping machine using a lapping slurry based on alumina grains of #1000, to roughen its front and back surfaces. The glass substrate was evaluated by the same tests, with the results shown in Table 1. The average dust count was 8.9 particles.

Example 3

(27) A synthetic quartz glass substrate having one mirror-like surface was obtained as in Example 1 except that the etching step used buffered hydrofluoric acid aqueous solution (BHF; aqueous solution containing 30 wt % ammonium fluoride and 10 wt % hydrogen fluoride) at pH 7.0 instead of hydrofluoric acid solution at pH 4.0. The glass substrate was evaluated by the same tests, with the results shown in Table 1.

Example 4

(28) A synthetic quartz glass substrate having one mirror-like surface was obtained as in Example 1 except that a heat treatment step was interposed between the etching step and the mirror polishing step. The heat treatment was in a heating furnace KBF663N1 (Koyo Thermo Systems Co., Ltd.) where the substrate was heated from room temperature to an ultimate temperature of 700 C. at a heating rate of 150 C/hr and held at the ultimate temperature for 10 minutes. The glass substrate was evaluated by the same tests, with the results shown in Table 1.

Example 5

(29) A synthetic quartz glass substrate having one mirror-like surface was obtained as in Example 1 except that a heat treatment step was interposed between the etching step and the mirror polishing step. Like Example 4, the heat treatment was in the furnace where the substrate was heated from room temperature to an ultimate temperature of 1,100 C. at a heating rate of 250 C./hr and held at the ultimate temperature for 30 minutes. The glass substrate was evaluated by the same tests, with the results shown in Table 1.

Comparative Example 1

(30) A synthetic quartz glass substrate having one mirror-like surface was obtained as in Example 1 except that the etching step used a nitric acid/hydrogen fluoride mixed aqueous solution (aqueous solution containing 10 wt % nitric acid and 10 wt % hydrogen fluoride) at pH 1.0 instead of hydrofluoric acid solution at pH 4.0. The glass substrate was evaluated by the same tests, with the results shown in Table 1.

Comparative Example 2

(31) A synthetic quartz glass substrate having one mirror-like surface was obtained as in Example 1 except that the etching step used a sodium hydroxide aqueous solution at pH 7.5 instead of hydrofluoric acid solution at pH 4.0. The glass substrate was evaluated by the same tests, with the results shown in Table 1.

(32) TABLE-US-00001 TABLE 1 Surface roughness Ra Average dust count (m) (particles) Front/ Rough Rough One-side Double- Etchant back surface surface mirror side Type pH surfaces after after surface mirror Sensing Example 1 HF 4.0 0.10 0.15 0.15 8.9 6.8 detectable Example 2 HF 4.0 0.20 0.25 0.25 8.6 6.8 detectable Example 3 BHF 7.0 0.20 0.25 0.25 8.5 6.8 detectable Example 4 HF 4.0 0.10 0.15 0.15 7.0 6.8 detectable Example 5 HF 4.0 0.10 0.15 0.15 6.8 6.8 detectable Comparative HNO.sub.3 + HF 1.0 0.10 0.13 0.13 2,800 6.8 detectable Example 1 Comparative NaOH 7.5 0.10 0.11 0.11 800 6.8 undetectable Example 2

(33) Japanese Patent Application No. 2014-053468 is incorporated herein by reference.

(34) Although some preferred embodiments have been described, many modifications and variations may be made thereto in light of the above teachings. It is therefore to be understood that the invention may be practiced otherwise than as specifically described without departing from the scope of the appended claims.