THIN-FILM SAW DEVICE UTILIZING RAYLEIGH MODE

Abstract

A surface acoustic wave device (5) is provided using a layered substrate system with a special material and a special cut of a piezoelectric thin film (4) selected for utilizing Rayleigh mode. The proper choice of the material and the cut of the piezoelectric thin film leads to a low velocity of the excited wave mode, which allows the usage of smaller devices without deteriorating other performance parameters according to specifications.

Claims

1. A SAW device realized on a layer stack comprising: a substrate (SU); a TCF compensating layer (CL); a piezoelectric thin film (PL); and an electrode structure (ES), wherein the piezoelectric thin film has a thickness and a cut-angle that favors excitement and propagation of a Rayleigh wave as a main mode.

2. The SAW device of claim 1, wherein the piezoelectric thin film is a lithium niobate film.

3. The SAW device of claim 1, wherein the piezoelectric thin film is a lithium niobate film having a crystal cut with Euler angles of (0°/125°+−15°/0°).

4. The SAW device of claim 1, wherein the piezoelectric thin film has a thickness x with 0.1λ<x<0.6λ.

5. The SAW device of claim 1, wherein: the TCF compensating layer is a SiO.sub.2 layer having a thickness y of 0.05λ<y<0.5λ; and the TCF compensating layer comprises one of doped SiO.sub.2 and GeO.sub.2.

6. The SAW device of claim 1, wherein the substrate comprises a high resistive crystalline material.

7. The SAW device of claim 1, wherein: the substrate comprises a high resistive silicon with Euler angles of (−45°±10°, −54°±10°, 60°±20°) or (0°±10°, 0°±10°, 45°±20°); or the substrate comprises one of Quartz, Sapphire, Glass, Spinel and SiC.

8. The SAW device of claim 1, wherein: between the substrate and the TCF compensating layer as an additional layer (AL) a polycrystalline silicon is arranged having a thickness z, wherein 0.05λ<z<1.0λ; and the additional layer comprises one of AlN, Si.sub.3N.sub.4, diamond and SiC.

9. The SAW device of claim 1, wherein: the electrode structure has a layered structures; Al is a main component of the layered electrode structure; the electrode structure has a thickness z with 0.05λ<z<0.25λ; and the electrode comprises one of a copper-based electrode system of one or more layers, a single layer chosen from W, Mo and Pt, Ta, Ag, Au and Ti.

10. The SAW device of claim 1, wherein: a dielectric passivation layer is arranged on the electrode structure, the passivation layer having a thickness w with 0.0025λ<w<0.2λ; and a material of the dielectric passivation layer is chosen from Si.sub.3N.sub.4, SiO.sub.2, SiON and Al.sub.2O.sub.3.

Description

[0032] The following explains in more detail with reference to specific embodiments and the accompanied figures. The figures are schematic only and may not show all elements as far as these omitted elements are known in the art can easily be complemented by a skilled worker. Moreover the figures are not drawn to scale and some details may be depicted enlarged for better understanding.

[0033] FIG. 1 shows a layer stack according to an embodiment

[0034] FIG. 2 shows a ladder type structure of SAW resonators as an example of a filter circuit realized by the electrode structure.

[0035] FIG. 3 shows admittance of a one-tor resonator of a currently typically used layer system compared with the admittance of a one-tor resonator according to embodiments of the disclosure.

[0036] FIG. 1 shows a layer stack according to an embodiment realizing a SAW device. The stack comprises a substrate SU, a TCF compensating layer CL, a piezoelectric thin film PL and on top an electrode structure EL. An optional additional layer AL may arranged between substrate and TCF compensating layer. The electrode structure may realize a filter circuit, e.g. a ladder-type arrangement of resonators forming a band pass or a band stop filter (notch filter).

[0037] FIG. 2 is a schematic block diagram of a ladder-type arrangement of resonators as an embodiment of the SAW device. The acoustic SAW resonators are usually one-port resonators.

[0038] The ladder-type structure comprises a number of basic sections BS. Each basic section comprises at least a series resonator R.sub.S and a parallel resonator R.sub.P as well. Such basic sections BS may be connected in series in a number that is necessary to achieve a desired selectivity. Series resonators R.sub.S that belong to neighbored basic sections, may be combined to a common series resonator R.sub.S as well as parallel resonators R.sub.P may also be combined if they are directly neighbored and belonging to different basic sections BS.

[0039] Besides the depicted example only one basic section BS already forms a basic filter. Two, three or more basic sections may provide sufficient selectivity.

[0040] For use with special frequency bands, the frequency must be adjusted via the pitch of the electrode structure according to the formula f=v/A where f represents the desired frequency of the final SAW device, v the propagation velocity of the acoustic wave and A is 2 times the pitch giving the wavelength λ adjustable via the pitch of the IDT that is formed from the electrode structure.

[0041] By the use of the Rayleigh mode as main mode of wave propagation the velocity of the acoustic wave can be reduced by about 20% from 3800 m/s (LSAW) to 3100 m/s (Rayleigh wave in a stack according to the embodiments described herein).

[0042] Rayleigh mode can set to be the dominant wave mode by properly selecting the piezoelectric layer in terms of material, thickness and crystal cut. Moreover, also thickness and material of other layers of the whole layer stack can be properly selected to support the desired wave mode.

[0043] As a result of using a Rayleigh wave, the pitch of the electrode structure of the SAW device could also be reduced by 20% in order to achieve the same frequency position of the single-port resonator. Accordingly, a final SAW device, which is formed by interconnecting several single-port resonators, can be significantly reduced in space requirements.

[0044] FIG. 3 shows the real part (upper diagram) and the absolute value (lower diagram) of the admittance of a single one-port resonator realized on a LSAW layer stack (curve 1/black line) compared with that of a one-port resonator according to an embodiment (curve 2, red line). Both resonators are designed to have the main mode at the same frequency.

[0045] The admittance curve 1 according to the stack using LSAW shows on both sides of the main mode disturbing resonances of spurious modes. Below the main resonance at 1800 MHz a small peak at about 1400 MHz results from a spurious Rayleigh wave mode (see arrow SM in the upper diagram). Above the resonant frequency, higher modes and bulk modes start occurring at a frequency of about 2300 MHz.

[0046] Contrary to that curve 2 which is assigned to a SAW resonator formed on a layer stack of various embodiments, does not show the disturbing modes anymore. By using the Rayleigh mode as the main mode, no further mode can propagate below the resonant frequency, as this mode (Rayleigh wave) has the slowest velocity of the system. Hence peak SM of curve 1 (see upper diagram) has vanished. The frequency of higher modes and bulk modes (compare peak SM of curve 1 in the lower diagram) are vanished too.

[0047] Disturbing modes do not occur below 2800 MHz that is substantially more distant from the main resonance as that of the resonator made from the known layer stack. Hence, the new SAW device is useful for forming filter devices for carrier aggregation.

[0048] Another advantage of the proposed layer stack is the difference in TCF between the left and right band edge of a SAW filter device produced from this new stack. This difference is typically greater than 20 ppm/K in currently used systems and has a negative effect on the device's bandwidth and matching, as the band edges change greatly with temperature. This effect results in a bandwidth of a respective SAW device that is decreasing with increasing temperature.

[0049] The proposed system reduces the difference in TCF to a value smaller than 5 ppm/K. Moreover, the bandwidth remains now much more constantly than that of a SAW device of a currently used stack.

[0050] Referring to the schematic layer sequence of FIG. 1 the single layers may be selected according to the following choice.

[0051] Substrate SU:

[0052] Possible materials may be chosen from [0053] highly resistive Si with Euler angles (−45°±10°, −54°±10°, 60°±20°) [0054] highly resistive Si with Euler angles (0°±10°, 0°±10°, 45°±20°) [0055] One of quartz, glass, spinel and SiC

[0056] Additional Layer AL (Optional)

[0057] Possible materials may be chosen from: [0058] Polycrystalline Si having a layer thickness x with 0.05λ<x<1λ [0059] AlN, Si3N4, diamond, SiC having a layer thickness x with 0<x<1λ [0060] no layer but a substrate that has an ion implanted surface layer, an amorphous layer or a dielectric layer on top

[0061] TCF compensating layer CL:

[0062] Possible Material [0063] SiO.sub.2 having a layer thickness 0.05λ<y<0.5λ [0064] 0.5λ of doped SiO2, GeO2

[0065] Piezoelectric thin film PL:

[0066] Possible material [0067] LiNbo.sub.3 having a layer thickness x with 0.1λ<x<0.6λ and Euler angles (0°/125°+−15°/0°)

[0068] Electrode Structure

[0069] Possible materials may be chosen from [0070] a layer sequence comprising Al as a main component having a layer thickness x with 0.05λ<z<0.25λ [0071] a copper-based electrode system of one or more layers [0072] a single “heavy layer” chosen from W, Mo, Ti, Ag, Au, Ta and Pt

[0073] Passivation Layer (Optional) [0074] One or more layers having a thickness w with 0.0025λ<w<0.2λ [0075] Possible materials may be chosen from: Si.sub.3N.sub.4, Sio.sub.2, SiON and Al.sub.2O.sub.3

[0076] In the following embodiment the layers of a layer stack are specified in more detail. On this layer stack a one-port resonator realized. Based on the structure of this resonator the admittance curve 2 of FIG. 3 has been simulated. The device is designed for a resonance frequency of 1800 MHz.

[0077] Substrate SU: highly resistive Si with Euler angles [0078] (−45°±10°, −54°±10°, 60°±20°) or [0079] (0°±10°, 0°±10°, 45°±20°)

[0080] Additional layer AL: Polycrystalline Si having a layer thickness x=500 nm

[0081] SiO.sub.2 having a thickness y=550 nm

[0082] Piezoelectric thin film PL: LiNbo.sub.3 having a layer thickness x=550 nm and Euler angles (0°/125°+−15°/0°)

[0083] Electrode structure EL: A layer sequence comprising Al as a main component having a layer thickness x=150 nm

[0084] Passivation layer PL: Si3N4 having a thickness w=10 nm.

LIST OF USED TERMS AND REFERENCE SYMBOLS

[0085]

TABLE-US-00001 dielectric passivation layer layer stack passivation layer SAW device AL additional layer CL TCF compensating layer CL TCF compensating layer ES electrode structure PL piezoelectric thin film SU substrate w thickness of passivation layer x thickness of the piezoelectric thin film y thickness of the TCF compensating layer z thickness of the electrode structure