ENCAPSULATION STRUCTURE OF OLED AND ENCAPSULATION METHOD FOR OLED

Abstract

The present application provides an encapsulation structure of OLED and a method for encapsulation an OLED. The encapsulation structure of OLED includes a TFT substrate, an encapsulation substrate disposed opposite to the TFT substrate, an OLED device disposed on a side of the TFT substrate close to the encapsulation substrate in an effective active area of the OLED, and a sealant disposed between the TFT substrate and the encapsulation cover plate on a periphery of the effective active area of the OLED; the encapsulation cover plate including an encapsulation substrate and a UV blocking layer disposed on a side of the encapsulation substrate close to the TFT substrate and corresponding to the effective active area of the OLED; wherein the UV blocking layer is a transparent thin film with low UV light transmittance and high visible light transmittance; which can reduce the influence on the electrical of the TFT.

Claims

1. An encapsulation structure of OLED, comprising: a TFT substrate, an encapsulation substrate disposed opposite to the TFT substrate, an OLED device disposed on a side of the TFT substrate close to the encapsulation substrate in an effective active area of the OLED, and a sealant disposed between the TFT substrate, an encapsulation cover plate disposed on a periphery of the effective active area of the OLED; the encapsulation cover plate comprising an encapsulation substrate and a UV blocking layer disposed on a side of the encapsulation substrate close to the TFT substrate and corresponding to the effective active area of the OLED; and wherein the UV blocking layer is a transparent thin film with low UV light transmittance and high visible light transmittance.

2. The encapsulation structure of OLED according to claim 1, wherein the encapsulation substrate is a glass substrate, a quartz substrate or a polymer substrate.

3. The encapsulation structure of OLED according to claim 1, wherein the UV blocking layer has a thickness of 10 nm to 2000 nm.

4. The encapsulation structure of OLED according to claim 1, wherein a material of the UV blocking layer comprises one or more material selected from zinc oxide, titanium dioxide and cerium oxide.

5. The encapsulation structure of OLED according to claim 1, further comprising a protective layer disposed between the OLED device and the UV blocking layer.

6. The encapsulation structure of OLED according to claim 1, further comprising a desiccant disposed on an inner side of the sealant in the periphery of the effective active area of the OLED.

7. An encapsulation method for an OLED, comprising the following steps: Step S1, providing a TFT substrate, fabricating an OLED device on the TFT substrate within an active area of the OLED to be formed; Step S2, providing an encapsulation substrate, fabricating a UV blocking layer on the encapsulation substrate within the active area of the OLED to be formed; wherein the UV blocking layer is a transparent thin film with low UV light transmittance and high visible light transmittance; the encapsulation substrate and the UV blocking layer constituting an encapsulation cover plate; and step S3, first coating a sealant on edges of the encapsulation cover plate outside a periphery of the active area of the OLED to be formed, then aligning the encapsulation cover plate with the TFT substrate, and irradiating UV light to the encapsulation cover plate to cure the sealant.

8. The encapsulation method for the OLED according to claim 7, wherein the step S1 further comprises depositing a protection layer on the OLED device; and the step S3 further comprises disposing a desiccant on an inner side of the sealant in the periphery of the effective active area of the OLED to be formed.

9. The encapsulation method for the OLED according to claim 7, wherein the UV blocking layer is a zinc oxide inorganic thin film, a titanium dioxide inorganic thin film or a cerium oxide inorganic thin film; and the step S2 is performed by a thermal evaporation process, a magnetron sputtering process, a chemical vapor deposition process or an atomic layer deposition process to fabricate the UV blocking layer.

10. The encapsulation method for the OLED according to claim 7, wherein the UV blocking layer is a thin film formed by dispersing one or more of zinc oxide particles, titanium dioxide particles or ceria particles in an organic resin solution; and the step S2 is performed by a spin-coating process, a cast film process, an ink jet printing process, a nozzle printing process or a one drop fill process to fabricate the UV blocking layer.

11. An encapsulation structure of OLED, comprising: a TFT substrate, an encapsulation substrate disposed opposite to the TFT substrate, an OLED device disposed on a side of the TFT substrate close to the encapsulation substrate in an effective active area of the OLED, and a sealant disposed between the TFT substrate and an encapsulation cover plate on a periphery of the effective active area of the OLED; the encapsulation cover plate comprising the encapsulation substrate and a UV blocking layer disposed on a side of the encapsulation substrate close to the TFT substrate and corresponding to the effective active area of the OLED; wherein the UV blocking layer is a transparent thin film with low UV light transmittance and high visible light transmittance; wherein the encapsulation substrate is a glass substrate, a quartz substrate or a polymer substrate; wherein the UV blocking layer has a thickness of 10 nm to 2000 nm; wherein a material of the UV blocking layer comprises one or more material selected from zinc oxide, titanium dioxide and cerium oxide; wherein a protective layer is disposed between the OLED device and the UV blocking layer; and wherein further comprises a desiccant is disposed on an inner side of the sealant in the periphery of the effective active area of the OLED.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0036] Accompanying drawings are for providing further understanding of embodiments of the disclosure. The drawings form a part of the disclosure and are for illustrating the principle of the embodiments of the disclosure along with the literal description. Apparently, the drawings in the description below are merely some embodiments of the disclosure, a person skilled in the art can obtain other drawings according to these drawings without creative efforts. In the figures:

[0037] FIG. 1 is a cross-sectional structural diagram of a first embodiment of the encapsulation structure of OLED of the present application;

[0038] FIG. 2 is a schematic cross-sectional structure of a second embodiment of the encapsulation structure of OLED of the present application; and

[0039] FIG. 3 is a flowchart of a method for the encapsulation OLED of the present application.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

[0040] To further illustrate the technical means adopted by the present application and the effects thereof, the following describes the preferred embodiments of the present application and the accompanying drawings in detail.

[0041] The present application provides an encapsulation structure of OLED. FIG. 1 shows a first embodiment of the encapsulation structure of OLED of the present application, includes a TFT substrate 1, an encapsulation cover plate 3 disposed opposite to the TFT substrate 1, an OLED device 5 disposed on a side of the TFT substrate 1 close to the encapsulation cover plate 3 in the effective active area AA of the OLED and the sealant 7 disposed between the TFT substrate 1 and the encapsulation cover plate 3 on the periphery of the effective active area AA of the OLED.

[0042] The encapsulation cover plate 3 is improved over the conventional technology and includes an encapsulation substrate 31 and a UV blocking layer 33 disposed on a side of the encapsulation substrate 31 close to the TFT substrate 1 corresponding to the effective active area AA of the OLED. The UV blocking layer 33 is a transparent thin film with low UV light transmittance and high visible light transmittance. That is, the UV blocking layer 33 can prevent most of the UV light from emitting to a region of the effective active area AA of the OLED in the TFT substrate 1, but the light emitted by the OLED device 5 can be smoothly emitted through the UV blocking layer 33, to ensure the normal display of the OLED. Further, the low UV light transmittance means that the UV light transmittance is less than 5%, and the high visible light transmittance means the visible light transmittance is higher than 80%.

[0043] Specifically:

[0044] The TFT substrate 1 is provided with TFTs arranged in an array in a region corresponding to the effective active area AA of the OLED. The TFT serves as a switching device and a driving device of the OLED, which is the same as the conventional technology, here do not detail described.

[0045] The OLED device 5 includes an anode, a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer, an electron injection layer and a cathode sequentially formed on the TFT substrate 1.

[0046] In order to protect the OLED device 5, a protective layer 4 is further disposed between the OLED device 5 and the UV blocking layer 33. The main material of the protective layer 4 is silicon nitride, SiO.sub.x.

[0047] The sealant 7 is used for bonding the TFT substrate 1 and the encapsulation cover plate 3 together.

[0048] Further, the encapsulation substrate 31 is transparent or has high transmittance in the wavelength range of visible light. The encapsulation substrate 31 may be a glass substrate, a quartz substrate or a polymer such as polyimide, PI, polyethylene terephthalate, PET, polyethylene naphthalate, PEN and etc. substrate.

[0049] With the characteristics of blocking the transmission of UV light and without blocking the transmission of visible light by using the material of Zinc oxide, ZnO, titanium dioxide, TiO.sub.2, cerium oxide, CeO.sub.2 and others, the UV blocking layer 33 may be made of a zinc oxide inorganic thin film, a titanium dioxide inorganic thin film or a cerium oxide inorganic thin film. Alternatively, the thin film formed by dispersing one or more of zinc oxide particles, titanium dioxide particles or ceria particles in an organic resin solution can be used. The UV blocking layer 33 has a thickness of 10 nm to 2000 nm.

[0050] During the process of curing the sealant 7 with UV light after the encapsulation cover plate 3 and the TFT substrate 1 are aligned, by the disposing of the UV blocking layer 33, the UV light can only pass and emit through a peripheral part of the effective active area AA of the OLED to the sealant 7 to cure the sealant 7. On the one hand, the UV blocking layer 33 can block the UV light from emitting to the TFT in the TFT substrate 1 instead of the conventional UV mask, reduce the influence of UV light to the electrical and stability of the TFT, and on the other hand, does not affect the light output intensity of the OLED device 5; in addition, the UV blocking layer 33 can also serve as another barrier against water vapor and oxygen to better protect the OLED device 5, and improve the lifetime of the OLED device 5.

[0051] FIG. 2 shows a second embodiment of the encapsulation structure of OLED according to the present application. The second embodiment is different from the first embodiment only in that it further includes a desiccant 8 disposed on the inner side of the sealant 7 in the periphery of the effective active area AA of the OLED for absorbing water vapor; the rest of the structure is the same as that of the first embodiment, and will not be repeatedly described herein.

[0052] Referring to FIG. 3, in combination with FIG. 1 or FIG. 2, the present application further provides an encapsulation method for the OLED, including the following steps:

[0053] Step S1, providing a TFT substrate 1, fabricating an OLED device 5 on the TFT substrate 1 within an active area AA of the OLED to be formed.

[0054] Specifically, the TFT substrate 1 is provided with TFT arranged in an array in a region corresponding to the effective active area AA of the OLED to be formed, and the TFT serves as a switching device and a driving device of the OLED.

[0055] The OLED device 5 may be fabricated by sequentially forming the anode, the hole injection layer, the hole transport layer, the organic light-emitting layer, the electron transport layer, the electron injection layer and the cathode on the TFT substrate 1, by using a conventional evaporation technique, and will not be repeatedly described herein.

[0056] Further, the step S1 further includes a step of vapor-depositing to form a protective layer 4 with main material composition of silicon nitride on the OLED device 5 by a plasma enhanced chemical vapor deposition, PECVD process. The specific process is as follows: firstly, aligning the TFT substrate 1 with the fabricated OLED device 5 with a mask for vapor-depositing the protective layer 4, and then depositing to form the protective layer 4 with a thickness of 500 nm-800 nm by using a silane gas (SiH.sub.4) with a purity of more than 99.99% and ammonia gas (NH.sub.3) as a reaction gas, and using argon gas (Ar) with a purity of more than 99.99% as an auxiliary ionization gas, the RF power is set to 10 W-500 W, the pressure in the deposition chamber is 10 Pa-10 Pa, and with the deposition rate of 10 nm/S?20 nm/S.

[0057] Step S2, an encapsulation substrate 31, fabricating a UV blocking layer 33 on the encapsulation substrate 31 within the active area AA of the OLED to be formed; the UV blocking layer 33 is a transparent thin film with low UV light transmittance and high visible light transmittance; the encapsulation substrate 31 and the UV blocking layer 33 constitute an encapsulation cover plate.

[0058] Specifically:

[0059] The encapsulation substrate 31 is transparent or has high transmittance in the visible light wavelength range, and may be a glass substrate, a quartz substrate or a polymer substrate.

[0060] The thickness of the UV blocking layer 33 is 10 nm to 2000 nm.

[0061] The UV blocking layer 33 may be a zinc oxide inorganic thin film, a titanium dioxide inorganic thin film or a cerium oxide inorganic thin film. In this case, the step S2 may use the thermal evaporation process, the magnetron sputtering process, the chemical vapor deposition, CVD process or the atomic layer deposition, ALD process to fabricate the UV blocking layer 33, preferably the sputtering process.

[0062] Taking the UV blocking layer 33 as an inorganic zinc oxide film as an example, a specific fabrication process is as follows: pretreating a target of zinc oxide (ZnO.sub.5), fabricating the zinc oxide inorganic thin film on the encapsulation substrate 31 by setting a sputtering atmosphere as argon with a purity of greater than 99.99%, vacuum degree of the equipment as 10.sup.?2 Pa to 10.sup.?3 Pa, and the RF power as 10 W-200 W to form the zinc oxide inorganic thin film on the encapsulation substrate 31.

[0063] The UV blocking layer 33 can be a thin film formed by dispersing one or more of zinc oxide particles, titanium dioxide particles or ceria particles in an organic resin solution, the organic resin should have better transparency, it can be polyurethane, acrylic polymer, acrylic resin or epoxy resin. In this case, the UV blocking layer 33 is fabricated by a spin-coating process, a cast film process, an ink jet printing, IJP process, a nozzle printing process or an one drop fill, ODF process adapted in step S2.

[0064] In step S3, first coating the sealant 7 on edges of the encapsulation cover plate 3 outside a periphery of the active area AA of the OLED to be formed, then aligning the encapsulation cover plate 3 with the TFT substrate 1, so that the UV blocking layer 33 is facing to the TFT The substrate 1, and irradiating UV light to the encapsulation cover plate 3 to cure the sealant 7.

[0065] Specifically, the wavelength of UV light used in step S3 is 365 nm and the light intensity is 5000 mJ to 9000 mJ.

[0066] Further, referring to FIG. 2, the step S3 further includes disposing the desiccant 8 on the inner side of the sealant 7 in the periphery of the effective active area AA of the OLED to be formed.

[0067] During the process in step S3 of curing the sealant 7 with UV light, by the disposing of the UV blocking layer 33, the UV light can only pass and emit through a peripheral part of the effective active area AA of the OLED to the sealant 7 to cure the sealant 7. On the one hand, the UV blocking layer 33 can block the UV light from emitting to the TFT in the TFT substrate 1 instead of the conventional UV mask, reduce the influence of UV light to the electrical and stability of the TFT, and on the other hand, does not affect the light output intensity of the OLED device 5; in addition, the UV blocking layer 33 can also serve as another barrier against water vapor and oxygen to better protect the OLED device 5, and improve the lifetime of the OLED device 5.

[0068] To sum up, in the encapsulation structure of OLED of the present application, the encapsulation cover plate is provided with the encapsulation substrate and the UV blocking layer. The UV blocking layer has low UV light transmittance and high visible light transmittance. On the one hand, the UV blocking layer can block the UV light from emitting to the TFT in the TFT substrate instead of the conventional UV mask during the UV light curing sealant process, reduce the influence of UV light to the electrical and stability of the TFT, and on the other hand, does not affect the light output intensity of the OLED device; in addition, the UV blocking layer can also serve as another barrier against water vapor and oxygen to better protect the OLED device, and improve the lifetime of the OLED device. The present application further provides an encapsulation method for the OLED, by the disposing of the UV blocking layer on the encapsulation substrate, the encapsulation cover plate is formed by the encapsulation substrate and the UV blocking layer, the UV blocking layer has low UV light transmittance and high visible light transmittance, on the one hand, it can block the UV light from emitting to the TFT in the TFT substrate instead of the conventional UV mask, reduce the influence of UV light to the electrical and stability of the TFT, and on the other hand, does not affect the light output intensity of the OLED device; in addition, the UV blocking layer can also serve as another barrier against water vapor and oxygen to better protect the OLED device, and improve the lifetime of the OLED device.

[0069] The foregoing contents are detailed description of the disclosure in conjunction with specific preferred embodiments and concrete embodiments of the disclosure are not limited to these descriptions. For the person skilled in the art of the disclosure, without departing from the concept of the disclosure, simple deductions or substitutions can be made and should be included in the protection scope of the application.