Thin-film piezoelectric material substrate, thin-film piezoelectric material element, head gimbal assembly, ink jet head and method of manufacturing the thin-film piezoelectric material element

Abstract

A thin-film piezoelectric material substrate includes an insulator on Si substrate and a thin-film laminated part. The insulator on Si substrate has a substrate for deposition made of silicon and an insulating layer formed on a surface of the substrate for deposition. The thin-film laminated part is formed on a top surface of the insulating layer. The thin-film laminated part has a YZ seed layer including yttrium and zirconium, and formed on the top surface; a lower electrode film laminated on the YZ seed layer; a piezoelectric material film made of lead zirconate titanate, shown by general formula Pb(Zr.sub.xTi.sub.(1-x))O.sub.3, and formed on the lower electrode film; and an upper electrode film laminated on the piezoelectric material film.

Claims

1. A thin-film piezoelectric material substrate comprising: an insulator on Si substrate including a substrate for deposition including silicon and an insulating layer formed on a surface of the substrate for deposition; and a thin-film laminated part formed on a top surface of the insulating layer, wherein the thin-film laminated part comprises: a YZ seed layer including yttrium and zirconium, and formed on the top surface of the insulating layer of the insulator on Si substrate; a lower electrode film laminated on the YZ seed layer; a piezoelectric material film including lead zirconate titanate, shown by a formula Pb(Zr.sub.xTi.sub.(1-x))O.sub.3(0?x?1), and laminated on the lower electrode film; and an upper electrode film laminated on the piezoelectric material film, wherein the piezoelectric material film is formed by epitaxial growth of a thin film including lead zirconate titanate by sputtering, wherein the piezoelectric material film has diffraction intensity peaks of a (001) plane and a (002) plane, the lower electrode film includes Pt and has a diffraction intensity peak of a Pt (200) plane and the YZ seed layer has a diffraction intensity peak of a (400) plane.

2. The thin-film piezoelectric material substrate according to claim 1, wherein the YZ seed layer has a two layer structure including a yttrium layer comprising yttrium and a zirconium layer comprising zirconium or one layer structure comprising a zirconium compound including yttrium and zirconium, wherein the YZ seed layer has a thickness of 10 nm to 50 nm, and is formed by high temperature evaporation of 900? C. or exceeding 900? C.

3. The thin-film piezoelectric material substrate according to claim 1, wherein the thin-film laminated part further comprises: a lower diffusion barrier film laminated between the lower electrode film and the piezoelectric material film; and an upper diffusion barrier film laminated between the piezoelectric material film and the upper electrode film, wherein the lower diffusion barrier film and the upper diffusion barrier film include strontium and ruthenium.

4. The thin-film piezoelectric material substrate according to claim 1, wherein the thin-film laminated part is divided into a plurality of element sections arranged uniformly along a longitudinal direction and a horizontal direction, wherein each of the element sections comprises a lower terminal electrode and an upper terminal electrode arranged on one side of the element section, wherein the lower terminal electrode is connected with the lower electrode film and the upper terminal electrode is connected with the upper electrode film.

5. The thin-film piezoelectric material substrate according to claim 3, wherein the thin-film laminated part is divided into a plurality of element sections arranged uniformly along a longitudinal direction and a horizontal direction, wherein each of the element sections comprises a lower terminal electrode and an upper terminal electrode arranged on one side of the element section, wherein the lower terminal electrode is connected with the lower electrode film through the piezoelectric material film and the lower diffusion barrier film and the upper terminal electrode is connected with the upper electrode film.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1(a) is a perspective view showing whole of the thin-film piezoelectric material substrate, FIG. 1 (b) is a plan view showing the surface of the thin-film piezoelectric material substrate after forming of element sections;

(2) FIG. 2 is a sectional view taken along the line 2-2 in FIG. 1(b);

(3) FIG. 3 is a plan view showing a principal part of a first surface after forming of element sections;

(4) FIG. 4 is a sectional view taken along the line 4-4 in FIG. 3;

(5) FIG. 5 is a sectional view taken along the line 5-5 in FIG. 18;

(6) FIG. 6 is a graph showing measurement result of diffraction intensity by XRD about the thin-film piezoelectric material substrate;

(7) FIG. 7 is a graph showing measurement result of diffraction intensity by XRD about the piezoelectric material element formed on an insulator on Si substrate, and on a silicon single crystal substrate having YZ seed layer respectively;

(8) FIG. 8 is a graph showing measurement result of diffraction intensity by XRD of PZT on insulator on Si substrate which the YZ seed layer is formed at 800? C. and 950? C. deposition temperature, respectively;

(9) FIG. 9 is a graph showing orientation degree of diffraction intensity peak of PZT (001) plane with YZ seed layer deposition temperature of 800, 900, 900? C. respectively;

(10) FIG. 10 is a sectional view showing a manufacturing step of thin-film piezoelectric material element according to the embodiment of the present invention;

(11) FIG. 11 is a sectional view showing a manufacturing step subsequent to that in FIG. 10;

(12) FIG. 12 is a sectional view showing a manufacturing step subsequent to that in FIG. 11;

(13) FIG. 13 is a sectional view showing a manufacturing step subsequent to that in FIG. 12;

(14) FIG. 14 (a) is a sectional view showing a manufacturing step subsequent to that in FIG. 13, FIG. 14 (b) is a sectional view showing a manufacturing step subsequent to that in FIG. 14 (a);

(15) FIG. 15 is a perspective view showing a whole HGA, from front side, according to the embodiment of the present invention;

(16) FIG. 16 is a perspective view showing, from front side, a principal part of the HGA in FIG. 15;

(17) FIG. 17 is a perspective view showing a principal part of a suspension constituting the HGA in FIG. 15 from front side;

(18) FIG. 18 is a perspective view showing a part, which a thin-film piezoelectric material element is fixed, on flexure with enlargement;

(19) FIG. 19 is a sectional view showing a summary constitution of the ink jet head according to the embodiment of the present invention;

(20) FIG. 20 is a sectional view showing a conventional thin-film piezoelectric material element; and

(21) FIG. 21 is a graph showing measurement result of diffraction intensity by XRD about the conventional thin-film piezoelectric material element.

DETAILED DESCRIPTION OF THE EMBODIMENTS

(22) In the following, embodiments of the present invention will be described with reference to the drawings. Note that the same components will be referred to with the same numerals or letters, while omitting their overlapping descriptions.

(23) (Structure of Thin-film Piezoelectric Material Substrate)

(24) To begin with, structure of the thin-film piezoelectric material substrate 1 according to the embodiment of the present invention will be explained with reference to FIG. 1 to FIG. 4.

(25) Here, FIG. 1(a) is a perspective view showing whole of the thin-film piezoelectric material substrate 1 according to the embodiment of the present invention, FIG. 1 (b) is a plan view showing the surface of the thin-film piezoelectric material substrate 1 after element sections 10 are formed. FIG. 2 is a sectional view taken along the line 2-2 in FIG. 1(b), FIG. 3 is a plan view showing a principal part of a first surface 1a after element sections 10 are formed, FIG. 4 is a sectional view taken along the line 4-4 in FIG. 3.

(26) The thin-film piezoelectric material substrate 1 has an insulator on Si substrate 2 and a thin-film laminated part 3.

(27) As illustrated in FIG. 2, the insulator on Si substrate 2 has a silicon wafer as a substrate for deposition and an insulating layer 2a, made of SiO.sub.2, formed on the surface of the silicon wafer.

(28) As illustrated in FIG. 1 (a), the thin-film laminated part 3 is formed on the first surface 1a of the thin-film piezoelectric material substrate 1. The rear side of the first surface 1a is a second surface 1b.

(29) The thin-film piezoelectric material substrate 1 according to the embodiment of the present invention includes a substrate, which a plurality of later-described element sections 10 are not formed (FIG. 1(a)), and a substrate, which a plurality of element sections 10 are formed (FIG. 1 (b)).

(30) The thin-film laminated part 3 is formed on the top surface of the insulating layer 2a. As illustrated in FIG. 2, the thin-film laminated part 3 has a laminated structure which a plurality of thin-films, including the later-described YZ seed layer 15, a lower electrode film 17, a lower diffusion barrier film 16a, a piezoelectric material film 13, an upper diffusion barrier film 16b and an upper electrode film 27, are laminated.

(31) As illustrated in FIG. 1 (b), a plurality of element sections 10 are able to be formed in the thin-film laminated part 3. Element sections 10 are separated by gap parts 11, and they are arranged regularly in longitudinal direction and horizontal direction. The later-described thin-film piezoelectric element 12b is formed with each element section 10.

(32) Each element section 10 is formed approximately rectangular shape in a plan view, as illustrated in FIG. 3. A lower terminal electrode 19a, an upper terminal electrode 19b and a contact via hole 21 are formed one side of long-side direction of each element section 10. As illustrated in FIG. 4, the contact via hole 21 is the via hole section which reach the surface of the lower electrode film 17 through the upper diffusion barrier film 16b, the piezoelectric material film 13 and the lower diffusion barrier film 16a. A lower terminal electrode 19a is formed inside the contact via hole 21. The bottom section of the lower terminal electrode 19a is directly connected with the surface of the lower electrode film 17. The upper terminal electrode 19b is directly connected with the surface of the upper electrode film 27. It is possible that an insulating film made of polyimide or the like is formed on the upper terminal electrode 19b so as to cover the element sections 10, not illustrated. In that case, a through hole is formed in the insulating film to secure electrical connection with each lower terminal electrode 19a and upper terminal electrode 19b.

(33) (Structure of Thin-Film Piezoelectric Material Element)

(34) Subsequently, structure of the thin-film piezoelectric material element 12b will be explained with reference to FIG. 5 in addition to FIG. 2. Here, FIG. 5 is a sectional view taken along the line 5-5 in FIG. 18 showing an enlarged part, of later-described flexure 106, which the thin-film piezoelectric material element 12b is adhered.

(35) The thin-film piezoelectric material element 12b (similar to the thin-film piezoelectric material element 12a) is adhered to the flexure 106 of the HGA 101. The thin-film piezoelectric material element 12b is manufactured with the above-described the thin-film piezoelectric material substrate 1 (thin-film piezoelectric material substrate 1 having the plurality of element sections 10). The thin-film piezoelectric material element 12b is formed with each element section 10 after the insulator on Si substrate 2 is removed from the thin-film piezoelectric material substrate 1.

(36) The thin-film piezoelectric material element 12b is adhered to the surface of the later-described base insulating layer 5 using not illustrated epoxy resin.

(37) As illustrated in FIG. 2 and FIG. 5, the thin-film piezoelectric material element 12b (similar to the thin-film piezoelectric material element 12a) has the YZ seed layer 15, the lower electrode film 17, the lower diffusion barrier film 16a, the piezoelectric material film 13, the upper diffusion barrier film 16b and the upper electrode film 27. The lower electrode film 17 is laminated on the YZ seed layer 15, the lower diffusion barrier film 16a is laminated on the lower electrode film 17. The piezoelectric material film 13 is laminated on the lower diffusion barrier film 16a. The upper diffusion barrier film 16b is laminated on the piezoelectric material film 13. The upper electrode film 27 is laminated on the upper diffusion barrier film 16b.

(38) Note that upper and lower in the present invention do not show necessarily upper side, lower side in a condition which the thin-film piezoelectric material element is adhered on the base insulating layer 5. These words are terms for reasons of convenience so as to distinguish two upper, lower electrode films and so on opposing each other sandwiching the piezoelectric material film 13 their between. In the actual products, the upper electrode film 27 and upper diffusion barrier film 16b are sometimes disposed lower side, and the lower electrode film 17 and lower diffusion barrier film 16a are sometimes disposed upper side.

(39) The YZ seed layer 15 has two layers structure which an yttrium layer made of yttrium and a zirconium layer made of zirconium are laminated. For example, the yttrium layer is able to be formed with yttrium oxide (Y.sub.2O.sub.3), and the zirconium layer is able to be formed with zirconium oxide (ZrO.sub.2).

(40) Further, it is possible that the YZ seed layer 15 has one layer structure with zirconium compound (YZrO.sub.x) including yttrium and zirconium.

(41) The YZ seed layer 15 has about 10 nm-50 nm film thickness, for example, and it is formed by high temperature evaporation on 900? C. or exceeds 900? C. (this will be explained in detail later). The high temperature evaporation on 900? C. or exceeds 900? C. establishes an orientation of crystal structure constituting the YZ seed layer 15. The YZ seed layer 15 is oriented along the (400) plane direction. As described in detail later, XRD shows the existence of only diffraction intensity peak for YZ(400) plane direction, about the YZ seed layer 15.

(42) The piezoelectric material film 13 is formed to be a thin-film shape using a piezoelectric material made of lead zirconate titanate, shown by general formula Pb(Zr.sub.xTi.sub.(1-x))O.sub.3 (referred to also as PZT in the following). The piezoelectric material film 13 is an epitaxial film formed by epitaxial growth, and for example it has a thickness of about 1 ?m-5 ?m. Further, the piezoelectric material film 13 is sputter film formed by sputtering.

(43) The piezoelectric material film 13 according to the embodiment of the present invention is orientated along the (001) plane direction or (002) plane direction. Orientation degree of the piezoelectric material film 13 along the (001), (002) plane direction is about 100%, as shown in FIG. 9

(44) Further, in this embodiment, a surface of the upper electrode film 27 side of the piezoelectric material film 13 (referred to also as upper surface) is a concavity and convexity surface 13A. The concavity and convexity surface 13A has a plurality of bending convex parts 13a and bending concave parts 13b. In the concavity and convexity surface 13A, each convex part 13a and concave part 13b are arranged one after the other along the concavity and convexity surface 13A, and its sectional form is a wave form. Each convex part 13a and concave part 13b are curved surfaces which slant gently. In this embodiment, an outside part, convexly projected from a center surface along the height direction of the concavity and convexity surface 13A, is the convex part 13a, an inside part, concavely hollowed from the center surface and connected to the convex part 13a, is the concave part 13b.

(45) Note that the illustrated piezoelectric material film 13 has the concavity and convexity surface 13A, as preferable embodiment, the piezoelectric material film 13 is able to have a structure not having the concavity and convexity surface 13A.

(46) Further, the upper diffusion barrier film 16b has the concavity and convexity structure in accordance with the concavity and convexity surface 13A, the upper surface of the upper diffusion barrier film 16b becomes the concavity and convexity surface in accordance with the concavity and convexity surface 13A. In this case, the upper surface of the upper diffusion barrier film 16b has a concavity and convexity in accordance with the concavity and convexity surface 13A.

(47) The lower electrode film 17 is a thin-film (thickness about 10 nm-35 nm) made of metal element which has Pt (200) as main ingredient for example, it is formed on the YZ seed layer 15. The lower electrode film 17 is formed by sputtering. As described in detail later, XRD shows the existence of only diffraction intensity peak for Pt(200) plane direction, about the lower electrode film 17.

(48) The lower diffusion barrier film 16a is a thin-film (thickness about 20 nm) made of conductive material, including strontium and ruthenium, such as SrRuO.sub.3 or the like formed by epitaxial growth. The lower diffusion barrier film 16a is formed by sputtering. The lower diffusion barrier film 16a is formed on the upper surface of the lower electrode film 17 of the piezoelectric material film 13 side. The piezoelectric material film 13 is formed on the lower diffusion barrier film 16a.

(49) The upper diffusion barrier film 16b is a thin-film (thickness about 10 nm-35 nm) made of amorphous conductive material, including strontium and ruthenium, such as SrRuO.sub.3 or the like, and it is formed on the concavity and convexity surface 13A of the piezoelectric material film 13. The upper diffusion barrier film 16b is also formed by sputtering. As described above, the upper surface of the upper diffusion barrier film 16b becomes a concavity and convexity surface according to the concavity and convexity surface 13A.

(50) The upper electrode film 27 is a polycrystal thin-film (thickness about 10 nm-35 nm) with metal element which has Pt as main ingredient, it is formed on the upper diffusion barrier film 16b. As described above, the upper surface of the upper electrode film 27 is a concavity and convexity surface according to the concavity and convexity surface 13A. The upper electrode film 27 is also formed by sputtering.

(51) In the thin-film piezoelectric material element 12b, the above-described upper terminal electrode 19b and lower terminal electrode 19a are directly connected with the surfaces of the upper electrode film 27 and lower electrode film 17 the respectively. The upper terminal electrode 19b and lower terminal electrode 19a are connected to later-described connecting wiring 111 through the later-described electrode pad 118b.

(52) The protective insulating layer 25 is formed so as to cover the whole surface of the thin-film piezoelectric material element 12b. The protective insulating layer 25 is formed with polyimide for example, and it has a thickness of about 1 ?m to 10 ?m. The thin-film piezoelectric material elements 12b do not need to be covered with the protective insulating layer 25, when thin-film piezoelectric material elements 12b have a protective insulating layer.

(53) It is preferable that crystalline of the upper electrode film 27 is different from crystalline of the lower electrode film 17. It is preferable that the lower electrode film 17 is a conductive thin-film formed by epitaxial growth, and it is possible that the conductive thin-film not formed by epitaxial growth is used as the upper electrode film 27. It is more preferable that Pt thin-film formed by epitaxial growth is used as the lower electrode film 17, polycrystal conductive thin-film is used as the upper electrode film 27.

(54) (Method of Manufacturing the Thin-Film Piezoelectric Material Substrate and Thin-Film Piezoelectric Material Element)

(55) Subsequently, the method of manufacturing the thin-film piezoelectric material substrate 1 and thin-film piezoelectric material element 12b will be explained with reference to FIG. 10-FIG. 14. The thin-film piezoelectric material substrate 1 and thin-film piezoelectric material element 12b (similar to the thin-film piezoelectric material element 12a) are manufactured as following.

(56) To begin with, a substrate manufacturing step is performed to manufacture the thin-film piezoelectric material substrate 1. In the substrate manufacturing step, a silicon wafer is prepared, and thermal oxidation is performed for the silicon wafer, thereby the insulating layer 2a is formed on one side of the silicon wafer. Then, the insulator on Si substrate 2 is obtained.

(57) After that, the thin-film laminated part 3 is formed on the top surface of the insulating layer 2a, thereby the thin-film piezoelectric material substrate 1 is manufactured.

(58) A thin-film laminated part forming step for forming the thin-film laminated part 3 is included in the substrate manufacturing step. Later-described YZ seed layer forming step and piezoelectric material film forming step are included in the thin-film laminated part forming step.

(59) When the thin-film laminated part forming step starts, to begin with, the YZ seed layer forming step is performed. In the YZ seed layer forming step, as illustrated in FIG. 10, the YZ seed layer 15 is formed on the top surface of the insulating layer 2a by vacuum evaporation.

(60) In this case, a later-described YZ seed material heated 900? C. or exceeds 900? C. is used. The YZ seed material is vaporized in a vacuum chamber, and thereby the YZ seed layer 15 is formed on the top surface of the insulating layer 2a.

(61) The YZ seed material is able to be formed with a first seed material including zirconium and second seed material including yttrium. First, second seed materials are used to form the YZ seed layer 15 having two layers structure which the zirconium layer and the yttrium layer are laminated. Further, the seed material made of yttrium zirconium compound including yttrium and zirconium are used to form the YZ seed layer 15 having one layer structure.

(62) Subsequently, a lower electrode film forming step is performed. In this step, epitaxial growth of metal element which has Pt as a main ingredient is performed on the YZ seed layer 15 by sputtering. This epitaxial growth makes the lower electrode film 17.

(63) Next, a lower diffusion barrier film forming step is performed. In this step, the lower diffusion barrier film 16a is formed with SRO for example, on upper surface of the lower electrode film 17 by sputtering.

(64) After that, a piezoelectric material film forming step is performed. In this step, as illustrated in FIG. 11, epitaxial growth of thin-film made of PZT is performed on the lower diffusion barrier film 16a by sputtering to form the piezoelectric material film 13.

(65) Subsequently, an upper diffusion barrier film forming step is performed. In this step, the upper diffusion barrier film 16b is formed with SRO for example, on the concavity and convexity surface 13A of the piezoelectric material film 13 by sputtering, as illustrated in FIG. 12.

(66) Further, the upper electrode film forming step is performed. In this step, growth of metal material having Pt as main ingredient is performed on the upper diffusion barrier film 16b by sputtering to form the upper electrode film 27. The upper electrode film is able to be no-oriented polycrystal film or a preferentially oriented film with the (110) plane, or (111) plane, not epitaxial growth film.

(67) As described above, the lower diffusion barrier film forming step and the upper diffusion barrier film forming step are performed, thereby the piezoelectric material film 13 and the upper electrode film 27 are formed respectively on the lower electrode film 17, the piezoelectric material film 13 via the lower diffusion barrier film 16a, the upper diffusion barrier film 16b respectively.

(68) Subsequently, an element section forming step is performed. In the element section forming step, as illustrated in FIG. 13, a photoresist is applied on the surface of the thin-film piezoelectric material substrate 1 to form a photoresist layer 27 on the surface of the thin-film laminated part 3.

(69) Next, as illustrated in FIG. 14 (a), patterning is performed with a not-illustrated photomask, so as to form a resist pattern 28.

(70) After that, using this resist pattern 28 as a mask, milling, RIE or etching is performed about the thin-film laminated part 3, so as to remove needless part of it.

(71) Then, the thin-film laminated part 3 are divided into a plurality of element regions 3a via gap part 11, as illustrated in FIG. 14(b). The above-described element section 10 is formed from each element region 3a.

(72) Further, later-described electrode forming step is performed. Next, a protecting insulating 25 made of polyimide is formed on each element region 3a, as illustrated in FIG. 14(b), a plurality of element section 10 are formed on the surface of insulator on Si substrate 2.

(73) Then, in the electrode forming step, the contact via hole 21 is formed in the protecting insulating layer 25, and the piezoelectric material film 13 is removed to form contact via hole 21 in each element section 10.

(74) Further, in each element section 10, the lower terminal electrode 19a and upper terminal electrode 19b are formed of plating or the like on the lower electrode film 17 and upper electrode film 27 respectively. Thereby the thin-film piezoelectric material substrate 1 illustrated in FIG. 1, FIG. 2 is manufactured.

(75) Furthermore, in case of HDD, the insulator on Si substrate 2 is removed from the thin-film piezoelectric material substrate 1 to form the plurality of thin-film piezoelectric elements 12b. For example, the thin-film piezoelectric elements 12b is adhered to the surface of base insulating layer 5 of HGA 101.

(76) In MEMS case, in the backside of the insulator on Si substrate 2, a predetermined resist pattern is formed to remove the Si wafer or to perform the patterning of Si wafer, in design area by RIE. This time, the insulating layer 2a of insulator on Si substrate 2 will serve as a stopper layer for RIE process. The same insulating layer 2a on insulator on Si substrate 2 will also serve as a function layer together with the piezoelectric material film 13.

EXAMPLE

(77) Subsequently, the thin-film piezoelectric material substrate 1 is explained concretely with reference to FIG. 6-FIG. 9. The present inventors manufactured a plurality of thin-film piezoelectric material substrate while changing constitution of the substrate for deposition and evaporation temperature in the above-described YZ seed layer forming step to a plurality of the thin-film piezoelectric material substrates. The present inventors measured diffraction intensities about respective thin-film piezoelectric material substrate, by X-ray diffraction of ?-2? method (XRD) with Cu-K? ray. The results are shown in FIG. 6-FIG. 9.

(78) FIG. 6 is a graph showing the measurement result of diffraction intensity by XRD about the thin-film piezoelectric material substrate 1. As illustrated in FIG. 6, it is able to be confirmed that the piezoelectric material film 13 made of PZT has diffraction intensity peaks of (001) plane and (002) plane only, in the thin-film piezoelectric material substrate 1. Further, it is able to be confirmed that the YZ seed layer 15 has diffraction intensity peak of (400) plane only. Furthermore, it is able to be confirmed that the lower electrode film 17, made of Pt, has diffraction intensity peak of (200) plane only.

(79) FIG. 7 is a graph showing measurement result of diffraction intensity by XRD about the insulating substrate being formed of the YZ seed layer by 800? C. of evaporation temperature (PZT ON IOS) and a silicon single crystal substrate being formed of the YZ seed layer by 800? C. of evaporation temperature (PZT ON Si).

(80) As illustrated in FIG. 7, it is able to be confirmed that even if the YZ seed layer is formed by 800? C. of evaporation temperature, the YZ seed layer 15 has diffraction intensity peak of (400) plane, the piezoelectric material film has diffraction intensity peak of (001) plane and (002) plane, about the silicon single crystal substrate.

(81) On the other hand, it is able to be confirmed that the piezoelectric material film 13 has diffraction intensity peak of (100) plane, (101) plane, (111) plane and (200) plane, about the insulator on Si substrate 2.

(82) However, it is not able to be confirmed that the piezoelectric material film 13 has diffraction intensity peak of only (001) plane and (002) plane, about the insulator on Si substrate 2. Instead, diffraction intensity peaks of other PZT planes also exist. Further, it is not able to be confirmed that YZ seed layer 15 has diffraction intensity peak.

(83) Accordingly, it becomes clear that even if 800? C. of evaporation temperature is sufficient for formation of following a), b) on the silicon single crystal substrate, 800? C. of evaporation temperature is not sufficient for formation of following a), b) on the insulator on Si substrate 2. a) YZ seed layer having diffraction intensity peak of (400) plane b) piezoelectric material film having diffraction intensity peak of (001) plane and (002) plane only

(84) FIG. 8 is a graph showing measurement result of diffraction intensity by XRD about the insulator on Si substrate which the YZ seed layer is formed with 800? C. evaporation temperature and the insulator on Si substrate which the YZ seed layer is formed with 950? C. evaporation temperature. As illustrated in FIG. 8, diffraction intensity peak of YZ seed layer is not able to be confirmed, about the insulator on Si substrate which the YZ seed layer is formed with 800? C. evaporation temperature.

(85) However, it is able to be confirmed that YZ seed layer has diffraction intensity peak of (400) plane about the insulator on Si substrate which the YZ seed layer is formed with 950? C. evaporation temperature. Further, it is also able to be confirmed that the piezoelectric material film 13 has diffraction intensity peak of (001) plane and (002) plane only.

(86) As mentioned above, 800? C. of evaporation temperature is not sufficient for crystallization of the YZ seed layer 15 on the insulator on Si substrate 2. However, when evaporation temperature rises to high temperature 900? C. or exceeds 900? C., as illustrated in FIG. 8, it is able to be confirmed that the YZ seed layer 15, having diffraction intensity peak of (400) plane, is formed. Accordingly, it is conceivable that when evaporation temperature rises to high temperature 900? C. or exceeds 900? C., crystallization of the YZ seed layer 15 starts on the insulator on Si substrate 2. Therefore, the YZ seed layer 15 is formed on the insulator on Si substrate 2 by high temperature evaporation with 900? C. or exceeds 900? C.

(87) Further, the present inventors formed three kinds of YZ seed layers 15 by 800? C., 900? C., 950? C. of evaporation temperatures and they measured the diffraction intensity peak of (001) plane of the piezoelectric material film 13, by Lotgering method. The result is illustrated in FIG. 9.

(88) As illustrated in FIG. 9, it is able to be confirmed that when evaporation temperature of the YZ seed layer 15 is 800? C., orientation degree is only 0.4, but when evaporation temperature of the YZ seed layer 15 is 900? C. or 950? C., orientation degree reaches 1.0. Accordingly, it is conceivable that if evaporation temperature of the YZ seed layer 15 reaches 900? C. or exceeds 950? C., the piezoelectric material film 13, orientated (001) plane direction, is formed.

(89) As described above, when the YZ seed layer 15 satisfying the above-described condition about evaporation temperature is formed on the insulating layer 2a of the insulator on Si substrate 2, the piezoelectric material film 13, orientated (001) plane, is formed by epitaxial growth. The piezoelectric material film 13, being formed the above-described manner, is a PZT thin-film having all of the above-described A), B), C). If evaporation temperature is less than 800? C., even if it exceeds 800? C., but does not reach 900? C., PZT thin-film, orientated (001) plane, is not formed.

(90) Therefore, it needs for formation of the PZT thin-film having all of the above-described A), B), C) that evaporation temperature of the YZ seed layer 15 reach 900? C. or exceeds 900? C.

(91) Further, as illustrated in FIG. 7, it is able to be confirmed that when the YZ seed layer 15 is formed on the insulator on Si substrate 2 by the above-described evaporation temperature, the piezoelectric material film 13, orientated (001) plane, is formed.

(92) On the other hand, because the thin-film piezoelectric material element 12b has the lower diffusion bather film 16a and the upper diffusion barrier film 16b, diffusion barrier strength of the lower electrode film 17, the piezoelectric material film 13 and the upper electrode film 27 has been elevated. Furthermore, the concavity and convexity surface 13A of the piezoelectric material film 13 has the concavity and convexity structure, the upper diffusion barrier film 16b and the upper electrode film 27 have also concavity and convexity structure similar to this one. Then, because a contact area with another film is extended than the case each film is flat, diffusion barrier strength between each film has been more elevated.

(93) Next, a conventional thin-film piezoelectric material element 400 is explained with reference to FIG. 20, FIG. 21. The thin-film piezoelectric material element 400 is formed on the insulator on Si substrate 402. The insulating substrate 402 has the silicon substrate and an insulating layer 402a formed on the surface of the silicon substrate. A lower seed layer 415, made of titanium or titanium oxide, is laminated on the top surface of the insulating layer 402a. A middle seed layer 416, made of Pt (111), is laminated on the lower seed layer 415, an upper seed layer 417, made of PbTiO.sub.3, is laminated on the middle seed layer 416. Further, the PZT thin-film 413 is laminated on the upper seed layer 417, an upper electrode film 427, made of Pt, is laminated on the PZT thin-film 413.

(94) Measurement result by XRD about the thin-film piezoelectric material element 400 is illustrated in FIG. 21. As illustrated in FIG. 21, it is able to be confirmed that the PZT thin-film 413 has diffraction intensity peaks of (100), (200) plane in addition to diffraction intensity peaks of (001), (002) plane.

(95) On the other hand, in case of the thin-film piezoelectric material element 12b according to the embodiment of the present invention, as mentioned above, it is able to be confirmed that the piezoelectric material film 13 has diffraction intensity peaks of (001), (002) plane only, but it is not able to be confirmed that the piezoelectric material film 13 has another diffraction intensity peaks. Accordingly, about the thin-film piezoelectric material element 12b, it is clear that crystal structure is oriented along the (001) direction.

(96) (Embodiment of Head Gimbal Assembly)

(97) To begin with, a structure of the HGA according to the embodiment of the present invention will be explained with reference to FIG. 15 to FIG. 18, in addition to the above-described FIG. 5. Here, FIG. 15 is a perspective view showing a whole of the HGA 101, from front side, according to the embodiment of the present invention. FIG. 16 is a perspective view showing a principal part of the HGA 101 from front side. FIG. 17 is a perspective view showing a principal part of the suspension 50 constituting the HGA 101 from front side. Further, FIG. 18 is a perspective view showing a part, which a thin-film piezoelectric material element 12b is fixed, of a flexure 106 with enlargement.

(98) As illustrated in FIG. 15, the HGA 101 has the suspension 50 and a head slider 60. The suspension 50 has a base plate 102, a load beam 103, the flexure 106 and a dumper not illustrated, and it has a structure which these parts are joined to be united one body by a weld and so on.

(99) The base plate 102 is a part which is used to fix the suspension 50 to a drive arms of a not-illustrate hard disk drive, and it is formed with a metal such as stainless steel or the like.

(100) The load beam 103 is fixed on the base plate 102. The load beam 103 has a shape in which the width gradually decreases as it is distanced more from the base plate 102. The load beam 103 has a load bending part which generates a power for pressing the head slider 60 against the hard disk of the hard disk drive.

(101) Further, as illustrated in FIG. 15 to FIG. 18, the flexure 106 has a flexure substrate 104, a base insulating layer 5, a connecting wiring 111, thin-film piezoelectric material elements 12a, 12b and the protecting insulating layer 25. The flexure 106 has a structure which the base insulating layer 5 is formed on the flexure substrate 104, the connecting wiring 111 and thin-film piezoelectric material elements 12a, 12b are adhered on the base insulating layer 5. Further, the protective insulating layer 25 is formed so as to cover the connecting wiring 111 and thin-film piezoelectric material elements 12a, 12b.

(102) The flexure 106 has a piezoelectric elements attached structure which thin-film piezoelectric material elements 12a, 12b are fixed on the surface of the base insulating layer 5 in addition to the connecting wiring 111 to become a structure with piezoelectric element.

(103) Further, the flexure 106 has a gimbal part 110 on the tip side (load beam 103 side). A tongue part 119, which the head slider 60 is mounted, is secured on the gimbal part 110, and a plurality of connecting pads 120 are formed near an edge side than the tongue part 119. Connecting pads 120 are electrically connected to not-illustrated electrode pads of the head slider 60.

(104) This flexure 106 expands or shrinks thin-film piezoelectric material elements 12a, 12b and expands or shrinks stainless part (referred to out trigger part) jut out outside of the tongue part 119. That makes a position of the head slider 60 move very slightly around not-illustrated dimple, and a position of the head slider 60 is controlled minutely.

(105) The flexure substrate 104 is a substrate for supporting a whole of the flexure 106, and it is formed with stainless. Rear side of the flexure substrate 104 is fixed to the base plate 102 and the load beam 103 by weld. As illustrated in FIG. 15, the flexure substrate 104 has a center part 104a fixed to surfaces of the load beam 103 and the base plate 102, and a wiring part 104b extending to outside from the base plate 102.

(106) The base insulating layer 5 covers surface of the flexure substrate 104. The base insulating layer 5 is formed with for example polyimide, and it has a thickness of about 5 ?m to 10 ?m. Further, as illustrated in detail in FIG. 17, a part of the base insulating layer 5, disposed on the load beam 103, is divided two parts. One part of them is a first wiring part 105a, the other part of them is second wiring part 105b. The thin-film piezoelectric material element 12a and thin-film piezoelectric material element 12b are adhered on surfaces of each wiring part. The above-described upper terminal electrode 19a and lower terminal electrode 19b of the thin-film piezoelectric material element 12a, 12b are connected to the electrode pads 118a, 118b. The electrode pads 118a, 118b are connected to the connecting wiring 111.

(107) A plurality of connecting wirings 111 are formed on surfaces of each of the first wiring part 105a and the second wiring part 105b. Each connecting wiring 111 is formed with conductor such as copper or the like. One end parts of each connecting wiring 111 are connected to the electrode pads 118a, 118b or each connecting pad 20.

(108) Further, a not illustrated thin-film magnetic head, which re records and reproduces data, is formed on the head slider 60.

(109) Furthermore, a plurality of not illustrated electrode pads are formed on the head slider 60, and each electrode pad is connected to the connecting pad 120.

(110) Because the HGA 101 is formed with the above-described thin-film piezoelectric material element 12a, 12b, the HGA 101 is able to be manufactured efficiently. Further, because, the piezoelectric material film 13 has a large piezoelectric property, minute position control by the HGA 101 is performed.

(111) (Embodiments of Ink Jet Head)

(112) Next, embodiments of the Ink Jet Head will now be explained with reference to FIG. 19.

(113) FIG. 19 is a sectional view showing a summary constitution of the ink jet head 301. The ink jet head 301 is manufactured with thin-film piezoelectric material elements 312a, 312b, 312c. The ink jet head 301 has a head main body part 302, thin-film piezoelectric material elements 312a, 312b, 312c, a vibration member 305, a plurality of ink chambers 306a, 306b, 306c and a side wall part 307.

(114) The head main body part 302 has a substrate 303A. A plurality of nozzles 303a, 303b, 303c and ink passages 304a, 304b, 304c (3 pieces in FIG. 19) are formed in the substrate 303A.

(115) The plurality of ink chambers 306a, 306b, 306c are formed so as to correspond to the each nozzle 303a, 303b, 303c and the each ink passage 304a, 304b, 304c. Each ink chamber 306a, 306b, 306c is partitioned by the side wall part 307, and each of them communicates via nozzles 303a, 303b, 303c through ink passages 304a, 304b, 304c. Ink, not illustrated, is accommodated in each ink chamber 306a, 306b, 306c. The head main body part 302 is able to be manufactured with a various kinds of material such as resin, metal, silicon (Si) substrate, glass substrate, ceramics or the like.

(116) The vibration member 305 is adhered to the side wall part 307 so as to cover a plurality of ink chambers 306a, 306b, 306c. The vibration member 305 is formed with silicon oxide (SiO) for example, and it has a thickness of about 3.5 ?m. Then, thin-film piezoelectric material elements 312a, 312b, 312c are adhered to the outside of the vibration member 305 so as to correspond to the each ink chambers 306a, 306b, 306c. Thin-film piezoelectric material elements 312a, 312b, 312c are adhered to the vibration member 305 with adhesive.

(117) The structure of each thin-film piezoelectric material element 312a, 312b, 312c is the same as the structure of the above-described thin-film piezoelectric material element 12b. Further, each thin-film piezoelectric material element 312a, 312b, 312c has not-illustrated electrode terminals. Not-illustrated wiring is connected to each electrode terminal.

(118) The head main body part 302 and the ink jet head 301 are able to be manufactured as follows. To begin with, nozzles 303a, 303b, 303c and ink passages 304a, 304b, 304c are formed on the substrate 303A by machining.

(119) Next, the side wall part 307, which ink chambers 306a, 306b, 306c are formed by machining or etching, is adhered to the substrate 303A. Or the side wall part 307 is formed on the substrate 303A by plating. After that, the vibration member 305, which thin-film piezoelectric material elements 312a, 312b, 312c are adhered, is adhered to the side wall part 307. Then the ink jet head 301 is manufactured.

(120) When electric power is supplied to thin-film piezoelectric material elements 312a, 312b, 312c via the wiring and electrode terminal from a not-illustrated power source concerning the ink jet head 301 manufactured as the above, as illustrated in FIG. 19, for example, transformation of the thin-film piezoelectric material elements 312b makes a curved part 305d in the vibration member 305. Then, the ink accommodated in each ink chamber 306a, 306b, 306c is pushed out, and the ink is ejected via ink passages 304a, 304b, 304c and nozzles 303a, 303b, 303c.

(121) Because the thin-film piezoelectric material elements 312a, 312b, 312c have constitution similar to the above-described thin-film piezoelectric material elements 12b, the ink jet head 301 is manufactured efficiently. Further, because the piezoelectric material film 13 has high heat-resistant, ink jet head 301 operates accurately and reliably.

(122) Further, in the ink jet head 301, limitation for material of the head main body part 302 is reduced than a case which a lower electrode film, a piezoelectric material film and an upper electrode film are formed on a silicon substrate and ink passages and nozzles are formed on the silicon substrate by reactive ion etching or the like, so various kinds of material are able to be used for the head main body part 302. Therefore, the method with low cost than a processing such as reactive ion etching or the like is able to be used when the head main body part 302 is manufactured, the ink jet head 301 is manufactured easily. Further, nozzles and ink passages are formed respectively with another substrates, and nozzles and ink passages are joined together, after that, the thin-film piezoelectric material element is adhered to them, thereby the ink jet head is able to be manufactured, though they are not illustrated. In this case, nozzles are able to be formed by machining and ink passages are able to be formed by plating.

(123) Furthermore, the thin-film piezoelectric material elements 312a, 312b, 312c, vibration member 305, ink chambers 306a, 306b, 306c, and sidewall part 307 can be all in one part made of the thin-film piezoelectric substrate, then attached to the head main body part 302. This can be done by backside patterning using a photo mask the insulator on Si substrate 2, then RIE remove the Si to form the ink chambers 306a, 306b, 306c. As the RIE stopper, the insulating layer 2a also serves as the vibration member. This method simplified the attachment complexity and greatly enhanced the alignment accuracy.

(124) In the above-described embodiment, the HGA and ink jet head are exemplarily explained as MEMS, the present invention is able to be applied to another device. For example, the present invention is also applicable to a variable focus lens, various kinds of sensors such as a pressure sensor, a vibration sensor, accelerometer and load sensor or the like.

(125) This invention is not limited to the foregoing embodiments but various changes and modifications of its components may be made without departing from the scope of the present invention. Besides, it is clear that various embodiments and modified examples of the present invention can be carried out on the basis of the foregoing explanation. Therefore, the present invention can be carried out in modes other than the above-mentioned best modes within the scope equivalent to the following claims.