Multiple Hard Mask Patterning to Fabricate 20nm and Below MRAM Devices

Abstract

A method for etching a magnetic tunneling junction (MTJ) structure is described. A stack of MTJ layers on a bottom electrode on a wafer is provided. A metal hard mask layer is provided on the MTJ stack. A stack of multiple dielectric hard masks is formed on the metal hard mask wherein each successive dielectric hard mask has etch selectivity with respect to its underlying and overlying layers. The dielectric hard mask layers are etched in turn selectively with respect to their underlying and overlying layers wherein each successive pattern size is smaller than the preceding pattern size. The MTJ stack is etched selectively with respect to the bottommost combination dielectric and metal hard mask pattern to form a MTJ device having a MTJ pattern size smaller than a bottommost pattern size.

Claims

1. A method for etching a magnetic tunneling junction (MTJ) structure comprising: providing a MTJ stack on a substrate; depositing a metal hard mask layer on said MTJ stack; depositing multiple dielectric hard masks on said metal hard mask wherein each successive dielectric hard mask has etch selectivity with respect to its underlying and overlying layers; forming a photo resist pattern on an uppermost said dielectric hard mask wherein said photo resist pattern has a first pattern size; etching said uppermost dielectric hard mask selectively with respect to said photo resist pattern and underlying said dielectric hard mask to form a dielectric hard mask pattern having a second pattern size smaller than said first pattern size; thereafter etching each succeeding dielectric hard mask selectively with respect to its underlying and overlying layers wherein each successive dielectric hard mask pattern is smaller than its preceding hard mask pattern wherein a bottommost dielectric hard mask is etched in conjunction with said metal hard mask to form a bottommost hard mask pattern; and thereafter etching said MTJ stack selectively with respect to said bottommost hard mask pattern to form a MTJ device having a MTJ pattern size smaller than a bottommost pattern size.

2. The method according to claim 1 wherein said first pattern size is between about 70 and 80 nm and said MTJ pattern size is between about 15 and 20 nm.

3. A method for etching a magnetic tunneling junction (MTJ) structure comprising: providing a MTJ stack on a substrate; depositing a metal hard mask layer on said MTJ stack; depositing a first dielectric hard mask on said metal hard mask; depositing a second dielectric hard mask on said first dielectric hard mask; depositing a third dielectric hard mask on said second dielectric hard mask; forming a photoresist pattern on said third dielectric hard mask wherein said photo resist pattern has a first pattern size; etching said third dielectric hard mask selectively with respect to said photoresist pattern and said second dielectric hard mask to form a third dielectric hard mask pattern having a second pattern size smaller than said first pattern size; thereafter etching said second dielectric hard mask selectively with respect to said third dielectric hard mask pattern and said first dielectric hard mask to form a second dielectric hard mask pattern having a third pattern size smaller than said second pattern size; thereafter etching said first dielectric hard mask and said metal hard mask selectively with respect to said second dielectric hard mask pattern and said MTJ stack to form a first dielectric hard mask pattern having a fourth pattern size smaller than said third pattern size; and thereafter etching said MTJ stack selectively with respect to said first dielectric hard mask pattern to form a MTJ device having a fifth pattern size smaller than said fourth pattern size.

4. The method according to claim 3 wherein said metal hard mask comprises one of the group containing Ta, Ti, TaN, and TiN having a thickness of between about 30 and 100 nm.

5. The method according to claim 3 wherein said first dielectric hard mask comprises silicon oxynitride (SiON), silicon oxide, or silicon nitride having a thickness of between about 10 and 1000 nm.

6. The method according to claim 3 wherein said second dielectric hard mask comprises spin-on carbon (SOC) or physically or chemically deposited amorphous carbon having a thickness of between about 100 and 500 nm.

7. The method according to claim 3 wherein said third dielectric hard mask comprises silicon or silicon oxynitride having a thickness of between about 10 and 50 nm.

8. The method according to claim 3 wherein said etching said third dielectric hard mask comprises etching with a plasma using a fluorine-based gas comprising CF.sub.4 or CHF.sub.3 said fluorine-based gas being mixed with O.sub.2.

9. The method according to claim 3 wherein said etching said second dielectric hard mask comprises isotropically etching with pure O.sub.2 or O.sub.2 mixed with a halogen comprising Cl.sub.2 or HBr.

10. The method according to claim 3 wherein said etching said first dielectric hard mask and said metal hard mask comprises etching with a plasma using a fluorine-based gas comprising CF.sub.4 or CHF.sub.3 said fluorine-based gas being mixed with O.sub.2 under a high source power and low bias power.

11. The method according to claim 3 wherein said etching said MTJ stack comprises isotropically etching with high source power and low bias power and with a plasma species comprising CH.sub.3OH or CH.sub.3OH, said plasma species mixed with Ar .

12. The method according to claim 11 after etching said MTJ stack, further comprising etching sidewalls of said MTJ stack with an ion beam etch using Ar plasma with a RF power of between about 500 to 1000 W to remove any damage and metal re-deposition from said MTJ sidewalls wherein said MTJ stack has a sixth pattern size smaller than said fifth pattern size and wherein said sixth pattern size is about 15 nm.

13. The method according to claim 3 wherein said first pattern size is between about 70 and 80 nm, said second pattern size is between about 45 and 50 nm, said third pattern size is between about 30 and 40 nm, said fourth pattern size is between about 20 and 30 nm, and said fifth pattern size is between about 15 and 20 nm.

14. The method according to claim 3 wherein said second dielectric hard mask remaining is stripped away by O.sub.2, H.sub.2O vapor or their mixture prior to said etching said MTJ stack.

15. A method for etching a magnetic tunneling junction (MTJ) structure comprising: providing a MTJ stack on a substrate; depositing a metal hard mask layer on said MTJ stack; depositing a first silicon-based hard mask on said metal hard mask; depositing a second carbon-based hard mask on said first hard mask; depositing a third silicon-based hard mask on said second hard mask; forming a photo resist pattern on said third hard mask wherein said photo resist pattern has a first pattern size; etching said third hard mask selectively with respect to said photo resist pattern and said second hard mask to form a third hard mask pattern having a second pattern size smaller than said first pattern size; thereafter etching said second hard mask selectively with respect to said third hard mask pattern and said first hard mask to form a second hard mask pattern having a third pattern size smaller than said second pattern size; thereafter etching said first hard mask and said metal hard mask selectively with respect to said second hard mask pattern and said MTJ stack to form a first hard mask pattern having a fourth pattern size smaller than said third pattern size; and thereafter etching said MTJ stack selectively with respect to said first hard mask pattern to form a MTJ device having a fifth pattern size smaller than said fourth pattern size.

16. The method according to claim 15 wherein said metal hard mask comprises one of the group containing Ta, Ti, TaN, and TiN, said first silicon-based hard mask comprises silicon oxynitride (SiON), silicon oxide, or silicon nitride, said second carbon-based hard mask comprises spin-on carbon (SOC) or amorphous carbon, and said third silicon-based hard mask comprises silicon or silicon oxynitride.

17. The method according to claim 15 wherein: said etching said third silicon-based hard mask comprises etching with a plasma using a fluorine-based gas comprising CF.sub.4 or CHF.sub.3 said fluorine-based gas being mixed with O.sub.2; said etching said second carbon-based hard mask comprises isotropically etching with pure O.sub.2 or O.sub.2 mixed with a halogen comprising Cl.sub.2 or HBr; said etching said first silicon-based hard mask and metal hard mask comprises etching with a plasma using a fluorine-based gas comprising CF.sub.4 or CHF.sub.3 said fluorine-based gas being mixed with O.sub.2 under a high source power and low bias power; and said etching said MTJ stack comprises isotropically etching with high source power and low bias power and with a plasma species comprising CH.sub.3OH or CH.sub.3OH, said plasma species mixed with Ar .

18. The method according to claim 17 after etching said MTJ stack, further comprising etching sidewalls of said MTJ stack with an ion beam etch using Ar plasma with a RF power of between about 500 to 1000 W to remove any damage and metal re-deposition from said MTJ sidewalls wherein said MTJ stack has a sixth pattern size smaller than said fifth pattern size and wherein said sixth pattern size is about 15 nm.

19. The method according to claim 15 wherein said first pattern size is between about 70 and 80 nm, said second pattern size is between about 45 and 50 nm, said third pattern size is between about 30 and 40 nm, said fourth pattern size is between about 20 and 30 nm, and said fifth pattern size is between about 15 and 20 nm.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0009] In the accompanying drawings forming a material part of this description, there is shown:

[0010] FIGS. 1 through 6 illustrate in cross-sectional representation steps in a preferred embodiment of the present disclosure.

[0011] FIG. 7 illustrates in cross-sectional representation an optional additional step in a preferred embodiment of the present disclosure.

[0012] FIG. 8 is a graphical representation of the overall decrease in pattern size from initial photoresist to multiple hard masks and final MTJ device in a preferred embodiment of the present disclosure.

DETAILED DESCRIPTION

[0013] In the present disclosure, we introduce a series of plasma etch approaches that can reduce their corresponding hard mask pattern size. Starting with a photoresist pattern size of 80 nm, the hard mask is gradually reduced to 50 nm, 40 nm and 30 nm at sequential steps, eventually allowing for a MTJ device size smaller than 20 nm after the final MTJ etch. This process is a simple, low cost approach to fabricate future sub 20 nm MTJ devices without involving high cost, complex exposure systems with ultra-small wavelength.

[0014] Typically, patterns are transferred from photoresist to metal hard mask, and then to MTJ. Thus, the minimal MTJ pattern size is defined by the minimal metal hard mask size, which is decided by the minimal photoresist pattern size, i.e., 70 nm using a 248 nm wavelength photolithography tool. In the process of the present disclosure, we insert multiple hard masks consisting of (from bottom to top) SiON/spin-on carbon (SOC)/Si hard mask (Si HM) above the metal hard mask and underneath the photoresist. By optimizing their plasma etch conditions, we can decrease Si HM pattern size to 50 nm, SOC to 40 nm, SiON and metal hard mask to 30 nm and final MTJ device size to 20 nm or below. The high etch selectivity among each hard mask layer also allows for high pattern integrity and reduces the device non-uniformity.

[0015] The schematic process flow of a 20 nm or below MTJ cell created by multiple hard mask etching is shown in FIGS. 1-6. FIG. 1 illustrates a bottom electrode layer 12 formed on a semiconductor substrate 10. Next, the MTJ film layers are deposited, typically including a seed layer, a pinned layer, a barrier layer, a free layer, and a cap layer, for example. These layers form the MTJ film stack 14.

[0016] On top of MTJ stack 14, a metal hard mask 16 such as Ta, Ti, TaN or TiN is deposited, preferably to a thickness of between about 30 and 100 nm. Then, multiple dielectric hard masks are deposited on the metal hard mask sequentially. First dielectric hard mask 18 may comprise silicon oxynitride (SiON), silicon oxide, or silicon nitride (SiN), having a thickness of between about 10 and 1000 nm. Second dielectric hard mask 20 may comprise spin-on carbon (SOC) or physically or chemically deposited amorphous carbon, having a thickness of between about 100 and 500 nm. Third dielectric hard mask 22 may comprise Silicon (Si), SiON, or SiN, having a thickness of between about 10 and 50 nm. Each dielectric hard mask is etch selective with respect to its overlying and underlying layers.

[0017] Finally, a photoresist layer is coated on top of the hard mask stack. During photolithography with a typical 248 nm wavelength light source, a photoresist pattern 25 size d1 (80 nm) is formed as shown in FIG. 1. Now, the Si hard mask 22 is etched in a reactive ion etching (RIE) step by a plasma using a fluorine-based gas such as CF.sub.4 or CHF.sub.3 mixed with O.sub.2. Fluorine gas is the main gas that readily etches the Si hard mask (HM), but it has a lower etch rate on carbon based photoresist and SOC, above and underneath the Si HM, respectively, allowing for a good selectivity and high pattern quality. O.sub.2 is added to remove any polymer residues during the reaction and thus greatly reduces the pattern size to d2 (45-50 nm) as shown in FIG. 2.

[0018] During the next step, pure O.sub.2 or O.sub.2 mixed with a halogen such as Cl.sub.2 or HBr is used to isotropically etch the SOC hard mask 20, reducing the pattern size to d3 (40 nm) as shown in FIG. 3. This O.sub.2 based plasma has a very low etch rate on Si HM above and SiON underneath, again allowing for a high quality pattern. The photoresist mask 25 is removed during this etch step.

[0019] For the next step of SiON and metal hard mask etch, a fluorine based plasma is again used. This plasma readily etches SiON 18 and metal 16, but not SOC 20 above and MTJ 14 underneath. By utilizing a high source power and low bias power, an isotropic chemical etch is again used and reduces the pattern size to d4 (30 nm) as shown in FIG. 4. A fluorine-based gas such as CF.sub.4 or CHF.sub.3 is mixed with O.sub.2. A high source power of between about 300 and 1000 watts and a low bias power of between about 20 and 100W is applied. Alternatively, prior to the last step of MTJ etch, any remaining SOC 20 on top is stripped away by O.sub.2, H.sub.2O vapor or their mixture, keeping the pattern size the same, as shown in FIG. 5.

[0020] Lastly, a plasma species with high source power and low bias power, such as CH.sub.3OH or CH.sub.3OH mixed with Ar is used to isotropically etch the MTJ. A high source power of between about 1000 and 3000W and a low bias power of between about 100 and 1000W is applied. These gases and etch conditions are used because the magnetic materials within the MTJ stack can be readily etched away and reduce the pattern size to d5 (20 nm), as shown in FIG. 6.

[0021] In an optional additional step, as shown in FIG. 7, after the CH.sub.3OH or CH.sub.3OH/Ar RIE etch, ion beam etching (IBE) using Ar plasma with a RF power of between about 500 to 1000 W is applied to the MTJ sidewalls to remove any damage and metal re-deposition from the previous RIE step. This further decreases the MTJ size to d6 (15 nm).

[0022] Scanning Electron Microscope (SEM) images confirm the decrease in pattern size over the process steps. FIG. 8 graphically illustrates the overall decrease in pattern size for the hard mask materials.

[0023] The process of the present disclosure creates sub 20 nm MTJ cell size by reducing the multiple hard masks' sizes during plasma etch. The multiple hard masks also allow for a better selectivity during etch, thus resulting in a higher device size and performance uniformity. Compared to the complex and expensive immersion 193 nm photolithography instruments with optical proximity correction (OPC) that people are using to deliver the same results, this is a much simpler and lower cost approach.

[0024] This process can be used especially for MRAM chips of the size smaller than 60 nm, which requires smaller critical dimension (CD) and higher device uniformity. Multiple hard masks are used to pattern the MTJ cells, by RIE alone or combined with IBE. The pattern size of each layer of hard mask is reduced by optimizing the plasma etch conditions to form an isotropic etch. The MTJ is isotropically etched by RIE, IBE or their combination, eventually reducing the pattern size to 20 nm and below. Due to the high selectivity, the integrity of patterns is preserved, leading to improved MTJ size uniformity.

[0025] Although the preferred embodiment of the present disclosure has been illustrated, and that form has been described in detail, it will be readily understood by those skilled in the art that various modifications may be made therein without departing from the spirit of the disclosure or from the scope of the appended claims.