Use of at least one binary group 15 element compound, a 13/15 semiconductor layer and binary group 15 element compounds

Abstract

The invention provides the use of at least one binary group 15 element compound of the general formula R.sup.1R.sup.2E-ER.sup.3R.sup.4 (I) or R.sup.5E(ER.sup.6R.sup.7)2 (II) as the educt in a vapor deposition process. In this case, R.sup.1, R.sup.2, R.sup.3 and R.sup.4 are independently selected from the group consisting of H, an alkyl radical (C1-C10) and an aryl group, and E and E are independently selected from the group consisting of N, P, As, Sb and Bi. This use excludes hydrazine and its derivatives. The binary group 15 element compounds according to the invention allow the realization of a reproducible production and/or deposition of multinary, homogeneous and ultrapure 13/15 semiconductors of a defined combination at relatively low process temperatures. This makes it possible to completely waive the use of an organically substituted nitrogen compound such as 1.1 dimethyl hydrazine as the nitrogen source, which drastically reduces nitrogen contaminationscompared to the 13/15 semiconductors and/or 13/15 semiconductor layers produced with the known production methods.

Claims

1. A metal-organic chemical vapor deposition process for introducing a 13/15 semiconductor layer, comprising exposing a surface, under conditions suitable for deposition, to at least one binary group 15 element compound as the educt, as to form a 13/15 semiconductor layer on the surface, wherein the at least one binary group 15 element compound has the general formula
R.sup.1R.sup.2E-ER.sup.3R.sup.4(I), wherein R.sup.1, R.sup.2, R.sup.3 and R.sup.4 are selected independently from one another from the group consisting of H, an alkyl radical (C1-C10) and an aryl group, and E and E are selected independently from one another from the group consisting of N, P, As, Sb and Bi, wherein E=E or EE, and wherein hydrazine and its derivatives are excluded from the usage indicated, and/or wherein at least one binary group 15 element compound has the general formula
R.sup.5E(ER.sup.6R.sup.7).sub.2(II), wherein R.sup.5, R.sup.6 and R.sup.7 are selected independently from one another from the group consisting of H, an alkyl radical (C1-C10) and an aryl group, and E and E are selected independently from one another from the group consisting of N, P, As, Sb and Bi, wherein E=E or EE.

2. The process according to claim 1, wherein the educt is a binary group 15 element compound of the general formula (I) and R.sup.1 and R.sup.2 are selected independently from one another from the group consisting of an alkyl radical (C1-C10) and an aryl group, and R.sup.3R.sup.4H.

3. The process according to claim 2, wherein the binary group 15 element compound of the general formula (I) is selected from the group consisting of tBu.sub.2PNH.sub.2, (CF.sub.3).sub.2PNH.sub.2, Ph.sub.2PNH.sub.2, tBu.sub.2PAsH.sub.2, tBu.sub.2AsNH.sub.2, tBu.sub.2AsPH.sub.2, Ph.sub.2AsPH.sub.2, tBu.sub.2SbNH.sub.2 and tBu.sub.2SbPH.sub.2.

4. The process according to claim 1, wherein the educt is a binary group 15 element compound of the general formula (I) and R.sup.1, R.sup.2 and R.sup.4 are selected independently from one another from the group consisting of an alkyl radical (C1-C10) and an aryl group, and R.sup.3H.

5. The process according to claim 4, wherein the binary group 15 element compound of the general formula (I) is selected from the group consisting of tBu.sub.2AsPHMe, tBu.sub.2Sb-NHtBu, tBu.sub.2Sb-PHtBu and tBu.sub.2Sb-NHtPr.

6. The process according to claim 1, wherein the educt is a binary group 15 element compound wherein the general formula (I), and R.sup.1, R.sup.2, R.sup.3 and R.sup.4 are independently selected from each other from the group consisting of an alkyl radical (C1-C10) and an aryl group.

7. The process according to claim 6, wherein the binary group 15 element compound of the general formula (I) is selected from the group consisting of Me.sub.2AsAsMe.sub.2, tBu.sub.2SbNMe.sub.2, iPr.sub.2SbPMe.sub.2, Et.sub.2SbNMe.sub.2, Et.sub.2SbP(CH.sub.5).sub.2, tBu.sub.2BiPtBu.sub.2 and tBu.sub.2BiAstBu.sub.2.

8. The process according to claim 1, wherein the educt is a binary group 15 element compound of the general formula (II) and R.sup.5H.

9. The process according to claim 8, wherein the binary group 15 element compound of the general formula (II) is selected from the group consisting of HP(AstBu.sub.2).sub.2 and HN(SbtBu.sub.2).sub.2.

10. The process according to claim 1, wherein the educt is a binary group 15 element compound of the general formula (II) and R.sup.5 is selected from the group consisting of an alkyl radical (C1-C10) and an aryl group, and R.sup.6R.sup.7H.

11. The process according to claim 10, wherein the binary group 15 element compound of the general formula (II) is selected from the group consisting of tBuP(NH.sub.2).sub.2, tBuAs(NH.sub.2).sub.2 and (C.sub.6H.sub.5)P(NH.sub.2).sub.2.

12. The process according to claim 1, wherein the educt is a binary group 15 element compound of the general formula (II) and R.sup.5 and R.sup.7 are selected independently from one another from the group consisting of an alkyl radical (C1-C10) and an aryl group, and R.sup.6H.

13. The process according to claim 12, wherein the binary group 15 element compound of the general formula (II) is selected from the group consisting of nBuP(AsHMe).sub.2 and (C.sub.6H.sub.5)P(AsHMe).sub.2.

14. The process according to claim 1, wherein the educt is a binary group 15 element compound of the general formula (II) and R.sup.5, R.sup.6, and R.sup.7 are selected independently from one another from the group consisting of an alkyl radical (C1-C10) and an aryl group.

15. The process according to claim 14, wherein the binary group 15 element compound of the general formula (II) is selected from the group consisting of tBuAs(NMe.sub.2).sub.2, m-F.sub.3CC.sub.6H.sub.4As(NMe.sub.2).sub.2 and tBuAs(PMe.sub.2).sub.2.

Description

(1) Other characteristics, details and advantages of the invention follow from the exact wording of the claims as well as from the following description of the embodiment examples based on the illustrations. They show:

(2) FIG. 1 High-resolution X-ray diffraction profiles of Ga(As.sub.1xN.sub.x)/GaAs multiple quantum well structures produced using DTBAA (red graph) and/or using DTBAA and TBAs (black graph) and

(3) FIG. 2 Photoluminescence spectra of Ga(As.sub.1xN.sub.x)/GaAs multiple quantum well structures produced using DTBAA (red graph) and/or using DTBAA and TBAs (black graph).

SYNTHESIS OF GROUP 15 ELEMENT COMPOUNDS TO BE USED ACCORDING TO THE INVENTION

Example 1: Preparation of tBu2AsPH2

(4) 45 ml of a solution of [LiAl(PH.sub.2).sub.4] (0.091 M) in DME (4.1 mmol) are presented at 60 C. together with 30 ml THF, and subsequently 2.5 ml tBu.sub.2AsCl (12.3 mmol) in 15 ml DME added drop by drop. Once this is heated to room temperature, 100 ml pentane at 0 C. are added, and the sediment generated is filtered off. The solvent is removed, and the residue dissolved in pentane and once again filtered. Once the solvent has been removed under vacuum, the product is condensed at room temperature into a template cooled to 196 C. The result is tBu.sub.2AsPH2 as a clear, colorless liquid with a yield of 50%.

(5) .sup.1H-NMR (300 MHz, C.sub.6D.sub.6): =1.17 (d, .sup.4J.sub.p,H=0.4 Hz, 18H, CH.sub.3), 2.01 (d, .sup.1J.sub.p,H=181.9 Hz, 2H, PH.sub.2) ppm.

(6) .sup.13C{.sup.1H}-NMR (75 MHz, C.sub.6D.sub.6): =30.5 (d, .sup.3J.sub.p,c=4.5 Hz, CH.sub.3), 32.4 (s, C.sub.quaternary) ppm.

(7) .sup.31P-NMR (121 MHz, C.sub.6D.sub.6): =204.6 (t, .sup.1J.sub.p,H=181.9 Hz, PH.sub.2) ppm.

Example 2: Preparation of tBu2AsNH2 (Documented in: O. J. Scherer, W. Janssen, J. Organomet Chem. 1969, 16, P69-P70.)

(8) A continuous NH.sub.3 stream of gas is introduced into a solution of tBu.sub.2AsCl (4.0 g) in 50 ml diethyl ether for two hours at 20 C. The NH.sub.4Cl sediment that occurs is subsequently removed by filtration. The solvent is then distilled from the filtrate and the residue is then subjected to precision distillation in a vacuum. The resulting compound is tBu.sub.2AsNH.sub.2 at a pressure of 0.002 kPa (0.02 mbar) and a temperature of 40 C. with a yield of 60%.

(9) .sup.1H-NMR (300 MHz, C.sub.6D.sub.6): =0.53 (s, br, 2H, NH.sub.2), 1.06 (s, 18H, CH.sub.3) ppm.

(10) .sup.13C{.sup.1H}-NMR (75 MHz, C.sub.6D.sub.6): =28.3 (s, CH.sub.3), 34.4 (s, C.sub.quaternary) ppm.

Example 3: Preparation of tBu2SbPH2

(11) 9.2 ml of a solution of [LiAl(PH.sub.2).sub.4] in DME (1.62 mmol, 0.176 M in DME) is presented at 78 C. and 1.0 ml tBu.sub.2SbCl (4.31 mmol) is added drop by drop. The milkyyellow solution is heated to room temperature after 20 minutes and stirred for another 30 minutes. The solvent is removed at a reduced pressure, and the brown residue extracted with n-pentane (20 ml) and then filtered. Once the solvent is removed at a reduced pressure, the compound tBu.sub.2SbPH.sub.2 is produced as an orange colored oil, which quickly disintegrates at room temperature, generating tBuPH.sub.2, PH.sub.3, (tBuSb).sub.4 and (tBu.sub.2Sb)2PH, which therefore has to be stored at 80 C.

(12) .sup.1H-NMR (300 MHz, C.sub.6D.sub.6): =1.25 (s, 18H, CH.sub.3), 1.63 (d, .sup.1J.sub.P,H=175 Hz, 2H, PH.sub.2) ppm.

(13) .sup.13C{.sup.1H}-NMR (75 MHz, C.sub.6D.sub.6): =28.0 (d, .sup.2J.sub.P,C=4 Hz, C(CH.sub.3).sub.3), 31.9 (d, .sup.3J.sub.P,C=3 Hz, CH.sub.3) ppm.

(14) .sup.31P-NMR (121 MHz, C.sub.6D.sub.6): =244.3 (t, .sup.1J.sub.P,H=175 Hz, PH.sub.2) ppm.

Example 4: Preparation of tBu2SbNH2

(15) 0.26 g LiNH.sub.2 (11.4 mmol) is suspended in 30 ml diethyl ether. Then, 2.81 g (10.4 mmol) tBu.sub.2SbCl is dissolved and added drop by drop to 20 ml diethyl ether at 20 C. Once heated to room temperature, the solvent is removed under a high vacuum, and the residue received in 30 ml n-pentane. Once the solid is separated by centrifugation, the solvent is removed under a high vacuum. 1.91 g tBu.sub.2SbNH.sub.2 remains (yield 73%) as a colorless liquid.

(16) .sup.1H-NMR: (300 MHz, C.sub.6D.sub.6): =0.19 (s, br, NH.sub.2, 2H); 1.15 (s, 18H, CH.sub.3) ppm.

(17) .sup.13C{.sup.1H}-NMR: (75 MHz, C.sub.6D.sub.6): =29.0 (s, SbC(CH.sub.3).sub.3); 29.5 (s, SbC(CH.sub.3).sub.3) ppm.

(18) .sup.15N{.sup.1H}-NMR: (51 MHz, C.sub.6D.sub.6): =11.0 (s) ppm.

Example 5: Preparation of tBu2SbNHtBu

(19) 4.45 g tBu.sub.2SbCl (16.4 mmol) is suspended in 50 ml n-pentane. The solution is cooled to 0 C. and 1.30 g tBuNHLi (16.4 mmol) added. The solution is heated to room temperature, stirred for two hours and then the resulting solid is separated by centrifugation. The solvent is then removed under a high vacuum and the resulting raw product is distilled under a high vacuum (0.0001 kPa (0.001 mbar)). The resulting compound is tBu.sub.2SbNHtBu (2.56 g, 51% yield) at 36 C. as a colorless liquid.

(20) .sup.1H-NMR: (300 MHz, C.sub.6D.sub.6): =1.09 (bs, NH, 1H); 1.21 (s, Sb(C(CH.sub.3).sub.3).sub.2, 18H); 1.23 (s, NC(CH.sub.3).sub.3, 9H) ppm.

(21) .sup.13C{.sup.1H}-NMR: (75 MHz, C.sub.6D.sub.6): =29.97 (s, SbC(CH.sub.3).sub.3); 31.53 (s, SbC(CH.sub.3).sub.3); 35.10 (s, NC(CH.sub.3).sub.3); 50.94 (s, NC(CH.sub.3).sub.3) ppm.

(22) .sup.15N{.sup.1H}-NMR: (51 MHz, C.sub.6D.sub.6): =53.47 (s) ppm.

Example 6: Preparation of tBu2SbPHtBu

(23) 1.55 g tBu.sub.2SbCl (5.71 mmol) is suspended in 50 ml n-pentane. 0.55 g tBuPHLi (5.71 mmol) are added at 20 C., which creates a yellow solution that is stirred overnight. The solids are separated by centrifugation, and the solvent removed under a high vacuum. The result is 1.62 g of the compound tBu.sub.2SbPHtBu (yield 87%) as a yellow oil.

(24) .sup.1H-NMR: (300 MHz, C.sub.6D.sub.6): =1.32 (s, Sb(C(CH.sub.3).sub.3).sub.2, 18H); 1.41 (s, PC(CH.sub.3).sub.3, 9H); 3.17 (d, .sup.1J.sub.PH=178 Hz, PH, 1H) ppm.

(25) .sup.13C{.sup.1H}-NMR: (125 MHz, C.sub.6D.sub.6): =29.42 (d, .sup.2J.sub.CP=2.37 Hz, Sb(C(CH.sub.3).sub.3).sub.2); 32.42

(26) (d, .sup.2Jcp=4.60 Hz, PC(CH.sub.3).sub.3); 34.03 (d, .sup.1J.sub.CP=12.03 Hz, PC(CH.sub.3).sub.3); 35.00 (s, Sb(C(CH.sub.3).sub.3).sub.2) ppm.

(27) .sup.31P{.sup.1H}-NMR: (101 MHz, C.sub.6D.sub.6): =59.62 (s, PH) ppm.

(28) .sup.31P-NMR: (101 MHz, C.sub.6D.sub.6): =59.62 (d, .sup.1J.sub.HH=178 Hz, PH) ppm.

Example 7: Preparation of tBu2SbNHiPr

(29) 6.20 g tBu.sub.2SbCl (22.84 mmol) is dissolved in 40 ml n-pentane, with the former being added drop by drop to a suspension of 1.49 g iPrNHLi (22.84 mmol) in 50 ml n-pentane at 20 C. After stirring overnight, the solid is separated by centrifugation and the solvent removed under a high vacuum. The subsequent distillation at 2 mm Hg at 68 C. results in 3.78 g (yield 56%) of the compound tBu.sub.2SbHiPr as a colorless liquid.

(30) .sup.1H-NMR: (300 MHz, C.sub.6D.sub.6): 8=0.85 (bs, NH, 1H); 1.15 (d, .sup.3J.sub.HH=6.28 Hz, NCH(CH.sub.3).sub.2, 6H); 1.21 (s, Sb(C(CH.sub.3).sub.3).sub.2, 18H); 3.26 (oct, .sup.3J.sub.HH=6.28 Hz, NCH(CH.sub.3).sub.2, 1H) ppm.

(31) .sup.13C{.sup.1H}-NMR: (75 MHz, C.sub.6D.sub.6): =28.57 (s, NCH(CH.sub.3).sub.2); 29.91 (s, Sb(C(CH.sub.3).sub.3).sub.2); 32.05 (s, Sb(C(CH.sub.3).sub.3).sub.2); 49.66 (s, NCH(CH.sub.3).sub.2) ppm.

(32) .sup.15N-NMR: (51 MHz, C.sub.6D.sub.6): =39.41 (s, NH) ppm.

Example 8: Preparation of HP(AstBu2)2

(33) 2.20 g tBu.sub.2AsCl (9.8 mmol) in approx. 10 ml THF are added drop by drop to a suspension of 1.72 g [Li(dme)PH.sub.2] (9.8 mmol) in approx. 150 ml THF at 60 C. over a period of 15 minutes. The suspension is stirred overnight. The solvent is removed from the clear orange solution, and the residue is accepted in 100 ml n-pentane and filtered. The volume of the solution is then reduced to 10 ml. The compound HP(AstBu.sub.2).sub.2 crystallizes from this solution in the form of yellow needles with a yield of 75% (1.50 g).

(34) .sup.1H-NMR (300 MHz, C.sub.6D.sub.6): =1.31 (s, 18H, CH.sub.3), 1.35 (d, .sup.4J.sub.P,H=0.6 Hz, 18H, CH.sub.3), 2.72 (d, .sup.1J.sub.P,H=169.5 Hz, 1H, PH) ppm.

(35) .sup.13C{1H}-NMR (75 MHz, C.sub.6D.sub.6): =31.2 (d, .sup.3J.sub.P,H=1.0 Hz, CH.sub.3), 31.4 (d, .sup.3J.sub.P,H=6.5 Hz, CH.sub.3), 34.5 (s, C.sub.quaternary), 36.0 (s, C.sub.quaternary) ppm

(36) .sup.31P-NMR (121 MHz, C.sub.6D.sub.6): =150.3 (d, .sup.1J.sub.P,H=169.6 Hz, PH) ppm.

Example 9: Preparation of HN(SbtBu2)2

(37) 1 ml (1.41 g, 5.19 mmol) tBu.sub.2SbCl is presented in 100 ml Et.sub.2O at 0 C and then NH.sub.3 gas is introduced. This results in spontaneous clouding. After 1.5 hours the reaction comes to an end and the white solid is filtered off. The solvent is removed under a high vacuum, leaving a colorless oil that solidifies into colorless, plate-shaped crystals after some time.

(38) .sup.1H-NMR (300 MHz, C.sub.6D.sub.6): =1.30 (s, 36H, C(CH.sub.3).sub.3)

(39) .sup.13C{.sup.1H}-NMR (75 MHz, C.sub.6D.sub.6): =29.1 (s, C(CH.sub.3).sub.3), 38.7 (s, C(CH.sub.3).sub.3) ppm.

Example 10: Preparation of tBu2PPHtBu

(40) 3.79 g (0.022 mol) of tBu.sub.2PCl were dissolved in 75 mL of pentane and cooled to 40 C. 2.50 g (0.026 mol) tBuPHLi were added, resulting in yellow coloration of the reaction mixture. A clear liquid was obtained by filtration and removal of the solvent in vacuum. Distillation in vacuum (10.sup.3 mbar, 100 C.) resulted in 2.60 g (52%) tBu.sub.2PP(H)tBu.

(41) .sup.31P{.sup.1H}-NMR (C.sub.6D.sub.6): =52.3 (d, .sup.1J.sub.PP=232.2 Hz, P(H)tBu), 24.7 (d, .sup.1J.sub.PP=232.2 Hz, tBu.sub.2P).

(42) IR v (cm.sup.1)=2989.33 (w), 2936.72 (s), 2891.75 (s), 2858.39 (s), 2707.05 (w), 2307.53 (m, PH), 1469.31 (s), 1458.99 (s) 1386.10 (m), 1360.88 (s), 1260.28 (w), 1172.56 (s), 1025.56 (m), 1014.16 (m), 932.42 (w), 862.72 (w), 809.16 (s), 760.77 (w), 690.99 (w), 584.61 (w), 566.72 (w), 497.30 (w), 461.05 (w), 410.82 (w).

Example 11: Preparation of tBu2PNH2 (documented in: O. J. Scherer, G. Schieder, Chem. Ber. 1968, 101, 4184-4198)

(43) 28.44 g (0.158 mol, 1.00 eq) of tBu.sub.2PCI were suspended in 10 mL diethyl ether and ammonia was condensed into the slurry at 50 C. Ammonium chloride precipitated and formed a white, flaky precipitate. The precipitate was removed by filtration and the raw product was distilled at a pressure of 6.66 mbar and an oil bath temperature of 60 C. 22.8 g (93%) of a colourless, liquid have been obtained.

(44) .sup.1H-NMR (300 MHz, C.sub.6D.sub.6): =1.04 (d, J=11.1 Hz, 18H, CH.sub.3).

(45) .sup.13C-NMR 75 MHz, C.sub.6D.sub.6): =28.1 (d, J=15.3 Hz, CH.sub.3), 32.9 (d, J=21.5 Hz, C.sub.quaternary)

(46) .sup.31P{.sup.1H}-NMR (C.sub.6D.sub.6): =62.72 (s, tBu.sub.2PNH2).

(47) .sup.31P-NMR (C.sub.6D.sub.6): =62.72 (s, tBu.sub.2PNH2).

(48) IR v (cm.sup.1)=3457.64 (w, NH), 3307.77 (w, NH), 2937.67 (m), 2893.19 (m), 2860.45 (m), 1559.70 (m), 1470.63 (s), 1384.73 (m). 1361.39 (s), 1260.52 (vw), 1189.44 (br, m), 1176.09 (br, m), 1017.29 (m), 956.99 (br, w), 930.69 (w), 806.78 (vs), 602.42 (s), 568.16 (w), 466.37 (m), 442.38 (m).

(49) Deposition of Ga(As.sub.1xN.sub.x) on GaAs using tBuzAsNH.sub.2 as a nitrogen source.

(50) tBu.sub.2AsNH.sub.2 (DTBAA=Di-tertbutyl amino arsane), which is intended according to the invention as an educt in a vapor deposition process, has been successfully used as a nitrogen source for the synthesis of gallium arsenide nitride layers (Ga(As.sub.1xN.sub.x)) (0<x<1) in a MOVPE process, namely for the precipitation of the 13/15 semiconductor Ga(As.sub.1xN.sub.x) (0<X<1) on gallium arsenide (GaAs) as the substrate.

(51) A commercial system from the manufacturer AIXTRON AG was used for the precipitation (system type: AIX 200 GFR). The precipitation took place with a hydrogen carrier gas flow at a reactor pressure of 5 kPa (50 mbar). Tri-ethyl gallium (Et.sub.3Ga) was introduced into the reactor as the gallium source at a pressure of 0.81510.sup.3 kPa (8.1510.sup.3 mbar. The arsenic source used was either the arsenic compound tBuAsH.sub.2 (TBAs=tert-butylarsine) (at a pressure of 0.81510.sup.3 kPa (8.1510.sup.3 mbar) in addition to DTBAA, or no additional arsenic source was used. Precipitation of the Ga(As.sub.1xN.sub.x) layers (0<x<1) occurred at a process temperature of 525 C.

(52) In a first experiment, the representation of Ga(As.sub.1xN.sub.x) (0<x<1) occurred starting from tri-ethyl gallium (Et.sub.3Ga) as the group 13 element source and the single source precursor DTBAA, to be used according to the invention, that served as a source of both nitrogen and arsenic.

(53) In a second experiment, tBuAsH.sub.2 (TBAs=tert-butylarsine) was used as an arsenic source in addition to DTBAA.

(54) The characterization of the Ga(As.sub.1xN.sub.x) layers (0<x<1) was firstly obtained by X-ray diffraction (XRD), and secondly by photoluminescence spectroscopy. A commercially available diffractometer by

(55) Panalytical (Panalytical XPert Pro) was used in the X-ray diffraction. -2 measurements were conducted in a high-resolution Eulerian cradle. X-rays were made around the (004) GaAs peak. The recording of the photoluminescence spectra was conducted with the 514 nm line of a cw-Ar ion laser (Coherent Inc) used for excitation. Room temperature photoluminescence was detected with a 1 m grating monochromator (THR 1000, Jobin-Yvon) and a cooled Ge detector using standard lock-in technology.

(56) The results of the X-ray diffraction experiments as well as the analyses by photoluminescence spectroscopy are graphically depicted in FIG. 1 and FIG. 2 respectively.

(57) FIG. 1 shows high-resolution X-ray diffraction profiles of Ga(As.sub.1xN.sub.x)/GaAs multiple quantum well structures with 0<x<1. The red color indicates the high-resolution X-ray diffraction profile of the Ga(As.sub.1xN.sub.x)/GaAs multiple quantum well structure that was generated by the exclusive use of the binary group 15 element compound DTBAA as provided according to the invention as the arsenic and nitrogen source. The black color indicates the high-resolution X-ray diffraction profile of the Ga(As.sub.1xN.sub.x)/GaAs multiple quantum well structure that was generated by using DTBAA with TBAs additions.

(58) While the first experiment resulted in a nitrogen content of 1.3% (see FIGS. 1 and 2, red graphs respectively) when only DTBAA was used as a group 15 element precursor, the second experiment saw the inclusion of only 0.3% nitrogen. The nitrogen contents given were determined by dynamic simulations of the X-ray diffraction profiles.

(59) By variation of the process parameters such as, for example, process pressure and temperature, it is possible to also generate higher levels of nitrogen content when only DTBAA is used as the group 15 element precursor.

(60) The values determined from the high-resolution X-ray diffraction profiles (see FIG. 1) for the respective nitrogen content of the two Ga(As.sub.1xN.sub.x)/GaAs multiple quantum well structures analyzed in two independent experiments (see above: first and second experiment) are confirmed by the results from photoluminescence spectroscopy (see FIG. 2), with 0<x<1.

(61) FIG. 2 shows photoluminescence spectra of the Ga(As.sub.1xN.sub.x)/GaAs multiple quantum well structures from the first and second experiments. The red color indicates the photoluminescence spectrum of the Ga(As.sub.1xN.sub.x)/GaAs multiple quantum well structure that was generated by the exclusive use of the binary group 15 element compounds DTBM as provided according to the invention as the arsenic and nitrogen source. The black color indicates in comparison the high-resolution photoluminescence spectrum of the Ga(As.sub.1xN.sub.x)/GaAs multiple quantum well structure that was generated by using DTBAA with TBA additions.

(62) The two peaks in the red and black graphs of FIG. 2 that are both at low energy values can be attributed to the nitrogenous quantum well (red graph: approx. 1.225 eV; black graph: approx. 1.375 eV). The peak at approx. 1.425 eV derives from the GaAs substrate used. The inclusion of nitrogen into the GaAs structure and thus the generation of Ga(As.sub.1xN.sub.x) (0<x<1) can be clearly recognized in the case of both experiments by the additional, red-shifted emissioncompared to pure GaAs. The exclusive use of DTBAA as the group 15 element precursor (first experiment) allows the observation of a higher nitrogen inclusion (1.3% N) than when DTBAA is used together with TBAs (second experiment, 0.3% N). In FIG. 2, this can be seen in the fact that the red shift in the case of the red graph is greater than in the black graph compared to the pure substrate GaAs.

(63) The use of the binary group 15 element compound DTBAA and the group 13 element precursor Et.sub.3Ga according to the invention in a vapor deposition process, in this case MOVPE, therefore leads to the desired deposition of the 13/15 semiconductor Ga(As.sub.1xN.sub.x), with 0<X<1. The result with regard to the nitrogen inclusion is better than when a mixture of the two group 15 element precursors DTBM and TBAs is used. This is due to the fact that when a mixture of DTBM and TBAs is used, the nitrogen atoms have to compete with the arsenic atoms resulting from the additional arsenic source TBAs, which leads to the result of an overall lower nitrogen content in the desired 13/15 semiconductor Ga(As.sub.1xN.sub.x) (0<x<1).

(64) The use according to the invention of the binary group 15 element compound DTBAA in a vapor deposition process, here MOVPE, leads to the representation of a ternary, nitrogenous 13/15 semiconductor. The relation of the group 15 elements that should be included in the 13/15 semiconductor to be producedin this case nitrogen and arsenicis mainly determined by the composition of the single source precursor. The nitrogen content of the 13/15 semiconductor Ga(As.sub.1xN.sub.x) (0<X<1) may be influenced and fine tuned by the specific and controlled addition of one or several other group 15 element sources, either according to the invention or already knownas for example in this case the additional, non-binary arsenic source TBAs. This allows the production of 13/15 semiconductors whichcompared to the exclusive use of tBuzAsNH.sub.2 as the source of nitrogen and arsenichave a lower nitrogen content. This may be attributed to the fact that the nitrogen atoms have to compete with the arsenic atoms from the additional arsenic source. The As/N ratio in the 13/15 semiconductor Ga(As.sub.1xN.sub.x) (0<x<1) to be produced may therefore, for example, be influenced by the variation of the partial pressures of the binary group 15 element source DTBAA and TBAs in the reactor. As an alternative or supplement, for example, the process temperature may be modified. On the whole, the combination and, subsequently, the opto-electronic characteristics of the 13/15 semiconductor and/or the 13/15 semiconductor layers may be varied and/or fine-tuned to a large degree.

(65) The use of an organically substituted nitrogen compound such as 1.1 di-methylhydrazine as the nitrogen source may be waived completely, which drastically reduces nitrogen contaminationscompared to the 13/15 semiconductors and/or 13/15 semiconductor layers produced with the known production methods. Should carbon contaminations possibly be contained in the 13/15 semiconductors and/or 13/15 semiconductor layers that are produced, they usually derive from the group 13 element source or sources that are usually organically substituted. On the whole, the use of the binary group 15 element compound DTBAA according to the inventionwithout the addition of an organically substituted nitrogen compound as the nitrogen sourceallows the production of a defined, ultrapure Ga(As.sub.1xN.sub.x) layer (0<x<1) with selectable opto-electronic characteristics.

(66) The invention is not limited to one of the embodiments described above, but may be modified in many ways.

(67) Any characteristics and advantages resulting from the claims, the description and the illustrations, including constructive details, spatial arrangement and process steps may be relevant to the invention either separately or in any different combination.