Abstract
A method for fabricating a Microelectromechanical System (MEMS) resonator includes providing a dielectric substrate defining a resonator and depositing a conductive coating having a resistivity of approximately 1 to 50 -cm on that substrate by Atomic Layer Deposition (ALD). A resonator fabricated according to this process includes a dielectric substrate defining a resonator and a conductive coating having a resistivity of approximately 1 to 50 -cm for electrically coupling the resonator to electronics. Another method for fabricating a MEMS resonator includes providing a dielectric substrate defining a resonator, depositing an aluminum oxide film on that substrate by ALD, and depositing a noble metal film on the aluminum oxide film, also by ALD.
Claims
1. A method for fabricating a microelectromechanical system (MEMS) resonator, comprising: providing a dielectric substrate having a resonator defined therein; and depositing a bilayer conductive coating on the dielectric substrate, the depositing of the bilayer conductive coating including (i) depositing a dielectric film on the dielectric substrate by Atomic Layer Deposition, and (ii) depositing a metal film on the deposited dielectric film by Atomic Layer Deposition, and wherein the bilayer conductive coating electrically couples the resonator to electronics.
2. The method of claim 1, wherein the bilayer conductive coating is deposited to a thickness of less than 100 nm.
3. The method of claim 1, wherein the metal film has a resistivity of 10.sup.6 to 10.sup.5 -cm.
4. The method of claim 1, wherein the deposited bilayer conductive coating has a uniform thickness.
5. The method of claim 4, wherein the resonator has an aspect ratio greater than 2:1.
6. The method of claim 4, wherein the resonator has an aspect ratio greater than 5:1.
7. The method of claim 1, wherein the metal film is a noble metal.
8. The method of claim 7, wherein the noble metal is one of Ru, Rh, Pd, Re, Ir, or Pt.
9. The method of claim 1, wherein the metal film has a thickness of 1 nm to 20 nm.
10. The method of claim 1, wherein the metal film is a pure metal film.
11. The method of claim 1, wherein the dielectric substrate is one of quartz, fused quartz, or fused silica.
12. The method of claim 1, wherein: the dielectric film is an Al.sub.2O.sub.3 amorphous film and the metal film is a noble metal film.
13. The method of claim 12, wherein: the Al.sub.2O.sub.3 amorphous film is deposited to a thickness of 1 nm to 2 nm; and the noble metal film is deposited to a thickness of 1 nm to 20 nm.
14. The method of claim 12, wherein the noble metal is one of Ru, Rh, Pd, Re, Ir, or Pt.
15. The method of claim 12, wherein the Al.sub.2O.sub.3 amorphous film reduces surface interfacial slippage and provides surface passivation.
16. A method for fabricating a microelectromechanical system (MEMS) resonator, comprising: providing a dielectric substrate having a resonator defined therein; depositing an Al.sub.2O.sub.3 amorphous film on the dielectric substrate by Atomic Layer Deposition; and depositing a noble metal film on the Al.sub.2O.sub.3 amorphous film by Atomic Layer Deposition, wherein the noble metal film for electrically couples the resonator to electronics.
17. The method of claim 16, wherein the deposited noble metal film has a resistivity of 1 to 50 -cm.
18. The method of claim 16, wherein the deposited noble metal film has a resistivity of 10.sup.6 to 10.sup.5 -cm.
19. The method of claim 16, wherein the noble metal is one of Ru, Rh, Pd, Re, Ir, or Pt.
20. The method of claim 16, wherein the deposited Al.sub.2O.sub.3 amorphous film and the deposited noble metal film each have a uniform thickness.
21. The method of claim 16, wherein the deposited Al.sub.2O.sub.3 amorphous film reduces surface interfacial slippage and provides surface passivation.
22. The method of claim 16, further comprising: placing the dielectric substrate in a vacuum chamber prior to depositing the Al.sub.2O.sub.3 amorphous film; creating a vacuum in the vacuum chamber; and depositing the Al.sub.2O.sub.3 amorphous film and the noble metal film without breaking the created vacuum.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1) The present invention will be understood and appreciated more fully from the following detailed description taken in conjunction with the drawings in which:
(2) FIG. 1A shows a typical disc resonator architecture for an all-quartz resonator gyroscope;
(3) FIG. 1B depicts the operation of a disc resonator for an all-quartz resonator gyroscope;
(4) FIG. 1C illustrates the configuration of an all-quartz disc resonator gyroscope including vacuum sealing;
(5) FIG. 1D is a cross sectional view of the resonator in FIG. 1A along the line 1D-1D;
(6) FIGS. 2A-2F illustrate a manufacturing process of a baseplate wafer for an all-quartz resonator gyroscope;
(7) FIG. 2G is a flowchart of an exemplary method of manufacturing a baseplate wafer for an all-quartz resonator gyroscope;
(8) FIGS. 3A-3H illustrate a manufacturing process of a resonator wafer for an all-quartz resonator gyroscope;
(9) FIG. 3I is a flowchart of an exemplary method of manufacturing a resonator wafer for an all-quartz resonator gyroscope;
(10) FIGS. 4A-4C illustrate an assembly process of a resonator wafer and baseplate wafer for an all-quartz resonator gyroscope;
(11) FIG. 4D is a flowchart of an exemplary method of assembling a resonator wafer and baseplate wafer for an all-quartz resonator gyroscope;
(12) FIGS. 5A-5F illustrate a vacuum sealing process of a resonator wafer and baseplate wafer for an all-quartz resonator gyroscope;
(13) FIG. 5G is a flowchart of an exemplary method of vacuum sealing a resonator wafer and baseplate wafer for an all-quartz resonator gyroscope;
(14) FIGS. 6A and 6B illustrate an embodiment of an all-quartz resonator gyroscope including integral control electronics;
(15) FIG. 7 illustrates an exemplary method for forming a bilayer conductive coating on a MEMS structure.
(16) FIG. 8 is a scanning electronic microscope image of a high-aspect-ratio resonator having a conductive coating formed thereon according to one aspect of the invention.
DETAILED DESCRIPTION
(17) The present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. This invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.
(18) Bilayer High Q Coating and Method
(19) FIG. 7 is a flowchart of a method 710 of forming an ultra-thin, highly conformal and highly conductive bilayer dielectric/metal coating. In operation 712, a dielectric substrate having at least one resonant structure defined thereon is provided. The dielectric substrate could be, for example, quartz, fused quartz, fused silica, or any other dielectric having desired properties.
(20) In operation 714 the dielectric substrate is sealed in a vacuum chamber suitable for Atomic Layer Deposition (ALD) processes. In operation 716, an ALD dielectric film is formed on exposed substrate surfaces. The ALD dielectric film can be an ALD Al.sub.2O.sub.3 (aluminum oxide) amorphous film formed using trimethylaluminum as a first precursor and water vapor gasses as a second precursor for the Atomic Layer Deposition. ALD Al.sub.2O.sub.3 amorphous films are known to exhibit a reactive chemistry which can serve as an adhesion layer or seed layer for other ALD layers. Reports in the literature have shown that Al.sub.2O.sub.3/ZnO (aluminum oxide/zinc oxide) composite ALD coatings can be used to prevent charging in the dielectric layer of RF MEMS switch devices. These films have resistivities in the 10.sup.13 to 10.sup.16 -cm range. However, the use of Al.sub.2O.sub.3/metal ALD composite films is heretofore unknown for producing highly conductive and high Q coatings for metal electrodes on MEMS structures.
(21) Typically, for Al.sub.2O.sub.3 amorphous films, in operation 714, the substrate is heated to the range of 180 C. to 220 C. and preferably to 200 C. while the background pressure in the chamber is preferably brought to the 10.sup.2 Torr range before deposition begins. In one embodiment, a 15 millisecond pulse of deionized water vapor is released into a nitrogen (N.sub.2) carrier gas stream flowing over the substrate. The chamber is then pumped for approximately eight seconds to return to a pressure of about 10.sup.1 Torr with a continuous flow of N.sub.2 at 20 Standard Cubic Centimeters per Minute (sccm). Then the precursor Trimethylaluminum (TMA) is introduced the same way. The reactant trimethylaluminum and water vapor gasses are introduced into the chamber sequentially, in pulses of about 10-15 milliseconds duration each and at an operating pressure of approximately 0.1 to 1 Torr, each being released into the same carrier gas stream, with the chamber being pumped for approximately eight seconds to bring it to a pressure of less than 1 Torr between the 10-15 millisecond between releases of trimethylaluminum and deionized water vapor into the carrier gas. The carrier gas is preferably N.sub.2, but other carrier gases may be used, such as argon (Ar), if desired. The trimethylaluminum can be carried into the chamber using an Ar or N.sub.2 flow with the total gas flow rate of approximately 20 sccm.
(22) The deposition rate is nominally 1.1 angstroms per sequence (or cycle). A typical deposition run for a quartz DRG would consist of ten cycles, leading to the deposition of 11 angstroms (1.1 nm) of conformal Al.sub.2O.sub.3.
(23) It should be understood that these process parameters can be varied to obtain desired results.
(24) Next, in step 718, without breaking the vacuum, the chamber is purged. Then, in operation 720, still without breaking the vacuum, an ALD metal film is formed on the ALD dielectric film. As will be understood, the ALD metal film can be formed to any thickness desired by varying the number of monolayers deposited on the substrate. Preferably, the metal is a pure noble metal, such as, for example, rhodium (Rh), platinum (Pt), ruthenium (Ru), rhenium (Re), palladium (Pd), or iridium (Ir), and the oxidant (second precursor) is O.sub.2. For rhodium, the first precursor can be rhodium (III) acetylacetonate. For platinum, the first precursor is preferably trimethyl (methylcylopentadienyl) platinum ((CH.sub.3).sub.3(CH.sub.3C.sub.5H.sub.4)Pt).
(25) The ALD process parameters for depositing an ALD platinum metal film in operation 720 are preferably as follows: 1. Establish a substrate temperature of approximately 270 C. 2. Release a 1 second pulse (approximately) of oxygen (O.sub.2) into a nitrogen (N.sub.2) carrier gas stream flowing over the substrate. 3. Pump the chamber for 1 second (approximately) to a pressure of less than 1 Torr. 4. Release a 0.25 second pulse of Trimethyl(methylcyclopentadienyl)platinum ((CH.sub.3).sub.3 (CH.sub.3C.sub.5H.sub.4)Pt) into the same carrier gas stream, while maintaining the target substrate at approximately 270 C. 5. Pump the sample and chamber for 1 second to a pressure of less than 1 Torr. 6. Repeat steps 1 through 5 until the required number of cycles is completed.
(26) The deposition rate is nominally 0.04 nm per cycle in operation 720. A typical deposition run for a quartz DRG would consist of 250 cycles, leading to the deposition of 10 nm of conformal Pt.
(27) The monolayer deposition process yields coatings that are both ultra-thin and highly uniform, even on high-aspect ratio (>10:1) structures. Thus, damping, due to coating thickness, is minimized, and stress gradients over temperature, introduced by non-uniform coatings, are reduced.
(28) The actual measured resistivities () of ALD metal films formed by the process described in operation 720 are near bulk metal resistivity values of 10.sup.5 to 10.sup.6 -cm, as shown below, which provides for highly conductive coatings and thus excellent electrical performance characteristics.
(29) Measured resistivity of ALD metal films of the present invention: =9.110.sup.6 -cm for 50 nm thick Pt (bulk value 9.810.sup.6 -cm); and =2.010.sup.5 -cm for 30 nm thick Ru (bulk value 1.010.sup.5 -cm).
(30) Additionally, an ALD Al.sub.2O.sub.3 amorphous film beneath an ALD metal film actually increases a resonator's Q compared to coating that resonator with an ALD metal film alone. This is due to the reduction of surface interfacial slippage and the surface passivation that the ALD Al.sub.2O.sub.3 amorphous film provides. For example, disc resonators, to be described in detail below, having bilayer ALD Al.sub.2O.sub.3/Pt or Al.sub.2O.sub.3/Ru coatings formed according to the method of FIG. 7 have shown to have performance gains of 20% over comparable disc resonators having only Pt or Ru coatings, respectively.
(31) Alternate Metal High Q Coating and Method
(32) In an alternate method for forming an ultra-thin, highly conformal and highly conductive coating, though not shown in detail in the Figures, an ALD metal film is deposited directly on a dielectric substrate having at least a MEMS structure defined thereon. That is, in this alternate method, the ALD dielectric film is not utilized. Rather, the High Q coating consists of only an ALD metal film. As above, the dielectric substrate could be, for example, quartz, fused quartz, fused silica, or any other dielectric having desired properties. And, the MEMS structure could be a resonator. Also, preferably the metal is a noble metal. The same ALD process parameters and precursors discussed above in relation to step 720 of FIG. 7 can be used in this alternate method. For the same reasons as above, the resulting conductive coatings are highly conformal, have a highly uniform thickness, and have resistivities approaching that of bulk metal values. It will be appreciated that this alternate metal coating and method can be utilized whenever desired.
(33) It should be understood that formed bilevel High Q coatings or alternative metal High Q coatings can be etched, patterned, or otherwise processed as desired and/or necessary in certain applications.
(34) These methods for forming High Q coatings, disclosed above, will now be further discussed in regard to fabricating an all-quartz disc resonator gyroscope. However, the present disclosure is applicable to any crystalline or amorphous dielectric MEMS structure design, geometry, or architecture where ultra-thin, highly conformal and highly conductive coatings are desired, including, for example, shear mode piezoelectric resonators having any desired fundamental mode resonance, including those in excess of 100 MHz. Further, a resonator fabricated in accordance with these methods may be utilized as any desired component in a MEMS device, including oscillators and filters.
(35) Disc Resonator Gyroscope (DRG) Architecture
(36) FIG. 1A shows a typical disc resonator 100 architecture for an all-quartz resonator gyroscope. A typical embodiment comprises a gyroscope including a planar disc resonator 100 fabricated of fused quartz in which deep reactive ion etching may be used to slot the disc into a system of interconnected rings 103 supported at a central support 102 with internal drive and sense electrodes 104, 106. The rings 103 and drive/sense electrodes 104, 106 are separated by gaps 101 over a substantial portion of the circumference. The internal drive and sense electrodes 104, 106 are formed from the quartz material left in the circumferential slots of the disc resonator 100. The drive and sense electrodes 104, 106 are electrostatic and may operate in paired halves within a single slot, e.g. an inner half and outer half divided along the length of the slot. Thus, the drive and sense electrodes 104, 106 generally interact with the disc resonator in the plane of the disc across narrow gaps 101 between the electrodes 104, 106 and the disc structure. Location of the drive and sense electrodes 104, 106 can be varied, however, it is desirable to position the sense electrodes 106 towards the outside edge of the disc resonator 100 to enhance sensitivity. Electrical connections to the drive and sense electrodes 104, 106 can be achieved through an etched metallic layer deposited on the etched quartz baseplate as described hereafter. Additional bias (or trim) electrodes may also be employed to assist in tuning the resonator and improving overall performance. The bias electrodes are incorporated into the structure along with the drive and sense electrodes and are used for tuning the frequency of the modes electrostatically for optimal performance.
(37) FIG. 1D is a cross section taken along line 1D-1D of FIG. 1A which is along a radial line of the resonator 100 illustrating the ALD coating 105 on the resonator 100. The basically concentric rings 103 are separated from each other and the drive and sense electrodes 104, 106 by gaps 101. If the resonator 100 were illuminated from below, light would be visible through the gaps 101. These gaps 101 have an aspect ratio of their own in the range from 10:1 to 3:1 of height to width. The ALD process is ideally suited for applying a metal coating between 10 and 100 nm thick on the rings 103 and drive and sense electrodes 104, 106. As shown in FIG. 1D, the ALD coating 105 coats three sides of the electrodes 104, 106, rings 103 and central support 102. Both the central support 102 and the drive and sense electrodes 104, 106 may be supported at high spots on an etched quartz baseplate 107. The actual support for the rings 103 are not visible in FIG. 1D. A section along a different radius would show the rings 103 connect to the central support 102 through a serpentine path of ring 103 material.
(38) FIG. 1B illustrates the operation of a disc resonator for an all-quartz resonator gyroscope. The left panel illustrates an analytical model of a typical disc resonator. The right panel depicts a DRG. In operation, the disc resonator 100 is excited such that a standing wave vibration pattern (which may be likened to the wine glass mode of the known hemispherical resonator gyroscope) moves in response to rotation of the gyroscope case as shown in the right image. Coriolis forces couple two degenerate modes of the disc to yield a new standing wave pattern after rotation of the DRG. In the example shown, under a case rotation (i.e. rotation of the entire DRG) of 90 degrees, the standing wave pattern shifts approximately 60 degrees (90 degrees less a 30 degree shift). The disc resonator architecture may comprise an axisymmetric resonator supported at a central node. A large number of circumferential slots occupied by the drive and sense electrodes 104, 106 provide a large area for capacitive electrode actuation and sensing, yielding a large signal to noise (S/N) ratio. The architecture lends itself to a simple two dimensional design, homogeneous material and batch fabrication and inexpensive manufacturing.
(39) FIG. 1C illustrates the overall configuration of an all-quartz disc resonator gyroscope including vacuum sealing which will be detailed hereafter. The all quartz construction of the disc resonator, baseplate wafer, and cap wafer provides a design with low temperature sensitivity. The handle wafer employed in manufacturing helps minimize debris, shorting and footing issues. An Au to Au thermo-compression bond may be employed for resonator attachment to the baseplate using 3 m accuracy for the critical bonding step. In addition, device wafer pair fabrication can be fully decoupled from vacuum sealing to enable early wafer-level vacuum testing of the gyroscope.
(40) U.S. Pat. No. 6,915,215 to McCloskey et al., which is incorporated by reference herein, describes exemplary control architectures for DRG embodiments described herein such as the all-quartz disc resonator gyroscope. Control of a DRG can be accomplished through the use of bulk complementary metal oxide semiconductor (CMOS) low power digital control circuit (e.g., an application specific integrated circuit [ASIC]) and/or a silicon-on-insulator (SOI) CMOS analog interface in the exemplary circuit designs described therein.
(41) Prior art post resonator gyroscopes operate using rocking modes of a post fixed to a planar electrostatically driven and sensed plate. One example is described in U.S. Pat. No. 5,894,090 to Tang et al., which is incorporated by reference herein.
(42) All-Quartz Disc Resonator Gyroscope and Manufacturing Process
(43) Four fused quartz wafers may be used to form the vacuum-sealed disc resonator gyroscope (DRG). One quartz wafer can serve as a temporary handle for the quartz resonator wafer processing of another quartz wafer. The two remaining quartz wafers can be used as a vacuum cap and an electrical baseplate, respectively. It should be noted that in description hereafter exemplary embodiments are illustrated through a two-dimensional side view cross sections showing the processes for developing the basic electrical and structural elements involved. Those skilled in the art will understand application of those processes to the exemplary disc resonator architecture of FIG. 1A or other MEMS structures.
(44) FIGS. 2A-2F illustrate a manufacturing process of a complete baseplate wafer for use in an all-quartz resonator gyroscope in sequence. The quartz baseplate wafer fabrication begins with a recess etch of the fused quartz wafer 200 as shown in FIG. 2B using either a fluorine-chemistry plasma or hydrofluoric acid process or any other known process capable of etching quartz to yield the appropriate pattern (e.g. matching the planar resonator layout of FIG. 1A) of recesses leaving high spots for the central support location 202 of the planar resonator and to provide contacts for the electrode locations 204 as well as the DRG case wall location 206 (for the cap wafer detailed hereafter). The etched recesses provide areas in which electrical circuit interconnects can be deposited to appropriately connect the drive and sense electrodes to the control circuitry. Following the etching, Ti/Au or Cr/Au (200 A/5000 A) are metallized on the wafer 200 to form the interconnects 208 for the electrodes as shown in FIG. 2C. A plasma enhanced chemical vapor deposition (PECVD) silicon dioxide or silicon nitride (5000 ) is then deposited to form the inter-metal dielectric layer 210 as shown in FIG. 2D. Reactive ion etching (RIE) may then be used to open vias 212 through the inter-metal dielectric layer 210 as shown in FIG. 2E. A second metallization of Ti/Au or Cr/Au (200 /5000 ) may be used to deposit the metal bond pads 214 and a vacuum seal ring 216 as shown in FIG. 2F. This concludes the baseplate wafer 200 fabrication.
(45) FIG. 2G is a flowchart of an exemplary method 220 of manufacturing a baseplate wafer for an all-quartz resonator gyroscope. In operation 222, a first fused quartz wafer is provided for a baseplate as shown in FIG. 2A. In operation 224, recesses are etched in the fused quartz baseplate as shown in FIG. 2B. In operation 226, metal interconnects are deposited on the fused quartz baseplate as shown in FIG. 2C. In operation 228, dielectric film is deposited over the interconnects as shown in FIG. 2D. In operation 230, vias are etched in the dielectric film as shown in FIG. 2E. And in operation 232, bond metal and a seal ring are deposited as shown in FIG. 2F. The seal ring marks out the periphery of the disc resonator and the bond metal is used to mount the disc resonator at the central support and the electrodes throughout the interior of the disc.
(46) FIGS. 3A-3G illustrate a manufacturing process of a resonator wafer for an all-quartz resonator gyroscope, in sequence. The starting materials for the resonator wafer process are a full fused quartz resonator wafer 300 (FIG. 3A) and another fused quartz wafer to be used as a handle wafer 302 (FIG. 3B) having release holes 304 (which may be ultrasonically machined through it). A silicon thin film 306 (approximately 1 m) is deposited on the resonator wafer 300 using a plasma enhanced chemical vapor deposition (PECVD) as shown in FIG. 3C or using SOI technology as will be understood by those skilled in the art. A chemical mechanical planarization (CMP) step may be carried out if there are any unacceptable surface imperfections due to the deposition. The silicon film may then be patterned 308 using a fluorine chemistry RIE as shown in FIG. 3D in regions that are not required for later bonding the etched resonator to the baseplate wafer. This will speed the final release step. In general, depending upon the applied resonator architecture the pattern will provide enough bonding area in the appropriate locations so that the resonator wafer 300 is stable on the handle wafer 302, but allowing relatively easy release of the handle wafer 302 in later processing. The resonator wafer 300 with patterned silicon film 308 is then bonded to the handle wafer 302 with through holes as shown in FIG. 3E.
(47) FIG. 3F illustrates an optional process of additional etching of the bottom of the disc resonator wafer 300 as shown. This may be done to form raised areas for the central support location 310 and electrode locations 312 where the baseplate wafer 200 will be bonded in subsequent processing.
(48) FIG. 3G then illustrates deep reactive ion etching (DRIE) that may be used to define the resonator pattern (e.g. the pattern shown in FIG. 1A) including the electrodes and central support with straight side walls 314 completely through the resonator wafer 300. DRIE of fused quartz defines resonator with straight side walls and minimal surface roughness. Note that the electrodes are now embedded within the resonator wafer 300 but physically disconnected from the resonator structure. Thus, the handle wafer 302 now supports the pattern of resonator structure and electrodes in the resonator wafer 300.
(49) The bonding surface of the resonator and the sidewalls are then metallized 316 with either the bilayer High Q coating or the alternate metal High Q coating, each discussed above. Both provide highly conformal and highly uniform coatings on the atomic scale. Thus, the thickness of a conductive coating can be reduced to a minimum while maintaining a continuous coating in high aspect ratio structures, including those having an aspect ratio in excess of 5:1. For example, FIG. 8 is a scanning electron microscope image 800 of the etched disc resonator wafer 300 having a 30 nm thick platinum coating formed directly thereon in accordance with the alternate metal High Q method described above.
(50) FIG. 3I is a flowchart of a method 320 of manufacturing a resonator wafer for an all-quartz resonator gyroscope, including the bilayer High Q coating. In operation 322, a second fused quartz wafer is received for the disc resonator as shown in FIG. 3A. In operation 324, a third fused quartz wafer is received for a handle with ultrasonically machined or laser machined through holes as shown in FIG. 3B. In operation 326, amorphous silicon thin film is deposited on the second wafer with chemical mechanical planarization (CMP) performed as necessary as shown in FIG. 3C. In operation 328, silicon is patterned on the second wafer as shown in FIG. 3D. In operation 330, the second wafer is bonded to the third wafer as shown in FIG. 3E. The wafers may be bonded with plasma-assisted room temperature bonding. Though not shown in FIG. 31, an optional process of additional etching of the bottom of the disc resonator wafer for electrode and support contacts as shown in FIG. 3F, can be performed subsequent to operation 330 and before operation 332.
(51) In operation 332, the second wafer is deep reactive ion etched (DRIE) to define the disc resonator with straight side walls as shown in FIG. 3G. The sidewalls define gaps 101 between rings 103 or drive/sensor electrodes 104/106 with a height-to-width aspect ratio between 3:1 and 10:1. In operation 334, an Al.sub.2O.sub.3 amorphous film is deposited on the etched quartz resonator wafer by Atomic Layer Deposition, as discussed above and shown in FIG. 7, to form the first layer of the bilayer High Q coating on the bonding surface and sidewalls of the disc resonator. Preferably, the deposited Al.sub.2O.sub.3 amorphous film is 1 to 2 nm-thick. In operation 336, a noble metal film is deposited on the Al.sub.2O.sub.3 amorphous film, also as discussed above and shown in FIG. 7, to form the second layer of the bilayer High Q coating on the bonding surface and sidewalls of the disc resonator. Preferably, the deposited noble metal film is 1 to 20 nm thick. Together, the ALD Al.sub.2O.sub.3 amorphous film and the ALD metal film form a bilayer High Q coating that is ultra-thin, highly conformal, and highly conductive, as discussed above.
(52) FIGS. 4A-4B illustrate assembly of a resonator wafer and baseplate wafer for an all-quartz resonator gyroscope. The resonator wafer 300 and handle wafer 302 pair are then brought in contact and aligned with the baseplate wafer 200. The resonator wafer 300 and baseplate wafer 200 may be bonded together using a metal/metal thermal compression bond, to bond the metal bond pads 214 of the baseplate wafer 200 to the central support location 310 and the electrode locations 312 of the resonator wafer 300 as shown in FIG. 4A. Alignment can be performed through the transparent baseplate wafer for .about 0.5 m accuracy. These bonds form the electrical connections to the electrodes and resonator structure. To release the resonator structure from the handle wafer, Xenon Difluoride gas (shown by arrows in FIG. 4B) may be passed through the release holes of the handle wafer to undercut the silicon layer complete the transfer of the resonator wafer 300 from the handle wafer 302 to the baseplate 200. The top side of the resonator wafer may then be coated with thin metallic layer 400 (e.g., approximately 10-20 nm thick) Al or Au with angled evaporation to form a completely symmetric structure and prevent shorting of probe pads.
(53) The final structure is illustrated in FIG. 4C.
(54) FIG. 4D is a flowchart of a method 420 of assembling a resonator wafer and baseplate wafer for an all-quartz resonator gyroscope. In operation 422, the second and the third wafer pair are bonded to the first wafer with metal-to-metal thermal compression bonding as shown in FIG. 4A. Alignment of the second and third wafers may be performed through the transparent first wafer to achieve about 0.5 m accuracy. In operation 424, the third wafer is removed from the second wafer by undercutting the silicon layer using Xenon Difluoride dry release as shown in FIG. 4B. The flow of Xenon Difluoride is indicated by the arrows. And in operation 426, the top side of the second wafer is metallized with angled deposition through a shadow mask to prevent shorting of probe pads as shown in FIG. 4C. Thus, the disc resonator is symmetrically coated with a thin conductive layer of metal to allow it to function electrostatically with the electrodes.
(55) FIGS. 5A-5F illustrate a vacuum sealing process of a resonator wafer 300 and baseplate wafer 200 for an all-quartz resonator gyroscope. The vacuum sealing process begins with a cavity 502 etched into a fused quartz cap wafer 500, e.g. using ultrasonic machining as shown in FIG. 5B. Then indium or tin solder (5 m thick) may be deposited using spray coating lithograph) and lift-off to form a metal bond line 504 around the perimeter of the cavity 502 as shown in FIG. 5C. A vacuum getter 506 may then be deposited into the cavity using a shadow mask as shown in FIG. 5D. For example the vacuum getter may comprise a titanium-based thin film getter or any similar getter material compatible with the structure and processes defined herein. The cap wafer 500 is brought to the resonator wafer 300 and baseplate wafer 200 pair and aligned using a bond aligner known in the art. For example, a bond aligner system from Electronic Vision Group or other similar systems may be applied to properly bond the wafers previously aligned to one another. The cap wafer 500 may be temporarily kept in near separation from the resonator wafer 300 and baseplate wafer 200 pair with 50 m thick spacers. This three-wafer stack is then transferred to a wafer bonder so that the cavity of the cap wafer 500 can be evacuated through the gap created by the 50 m-thick spacers. Once vacuum is achieved inside the cavity, the vacuum getter may be heated to approximately 350 C. for activation. The 50 m thick spacers may then be removed to contact the metal bond line 504 of the cap wafer 500 to the vacuum seal ring 216 of the baseplate wafer 200 to form the vacuum seal with the solder as shown in FIG. 5E. Note that the electrical interconnects to the resonator and electrodes pass under the vacuum seal. Finally, the cap wafer 500 may be ultrasonically machined to create access to the probe pads to the electrical interconnects of the gyroscope as shown in FIG. 5F.
(56) FIG. 5G is a flowchart of a vacuum sealing method 520 of a resonator wafer and baseplate wafer for an all-quartz resonator gyroscope. In operation 522, a fourth fused quartz wafer is provided for a cap wafer as shown in FIG. 5A. In operation 524, a cavity is ultrasonically etched into the cap wafer as shown in FIG. 5B. In operation 526, a solder seal ring is deposited with spray coating lithography and lifted-off as shown in FIG. 5C. In operation 528, a vacuum getter is deposited with shadow mask deposition as shown in FIG. 50. In operation 530, the getter is activated while the cap wafer and the baseplate wafer are still separated and then the cap wafer and the baseplate wafer are contacted to vacuum seal the resonator wafer with the solder seal ring as shown in FIG. 5E. And in operation 532, the cap wafer is then etched to reveal probe pads as shown in FIG. 5F.
(57) FIGS. 6A and 6B illustrate an embodiment of an all-quartz resonator gyroscope 610 including integral control electronics. In general, the gyroscope 610 is developed as described above with some additional processing. In FIG. 6A the all-quartz disc resonator gyroscope is vacuum sealed (consistent with the process outlined in FIGS. 5A-5G) with through wafer interconnects 600 and backside indium bond pads 602 integrated into the baseplate wafer 604. The baseplate wafer 604 may be produced just as the baseplate wafer 200 of FIGS. 2A-2G with the addition of the through wafer interconnects 600 being integrated into the baseplate wafer 604 prior to the metallization patterning on the wafer to form the interconnects for the electrodes as shown in FIG. 2C. In this case, the metallization is connected to the through wafer interconnects 600. Further metallization may be patterned on the backside of the baseplate wafer 604 from the through wafer interconnects 600 to the bond pads 602. In FIG. 6B control electronics 606 (e.g. an ASIC control electronics chip) may be flip-chip bonded to the all-quartz disc resonator gyroscope package with electrical connections going directly from the electronics to the electrodes and resonator within the vacuum sealed package.
(58) This concludes the description including preferred embodiments of the present invention. The foregoing description including preferred embodiments of the invention has been presented for the purposes of illustration and description. It is not intended to be exhaustive or to limit the invention to the precise forms disclosed. Many modifications and variations are possible within the scope of the foregoing teachings. Additional variations of the present invention may be devised without departing from the inventive concept as set forth in the following claims.
