Rectangular chip resistor and manufacturing method for same
10242776 ยท 2019-03-26
Assignee
Inventors
Cpc classification
H01C1/142
ELECTRICITY
International classification
H01C7/00
ELECTRICITY
H01C17/00
ELECTRICITY
H01C1/142
ELECTRICITY
Abstract
The chip resistor includes insulating substrate 10, first and second top electrodes (11x, 11b) on the top surface of the insulating substrate each on either longitudinal end thereof, and resistive element 12 electrically in contact with the top electrodes, wherein each of the top electrodes has, on its inner side facing to the other, cutout part 11a and protruding part 11b, with the cutout part in the first top electrode extending from at least one longitudinal side of the insulating substrate, transversely inwards thereof, and with the cutout part in the second top electrode arranged substantially point-symmetrically to the cutout part in the first top electrode with respect to the center of the insulating substrate, wherein the resistive element has contacting regions 12b, and non-contacting regions 12c, and trimming slot (53a, 53b) including a linear part.
Claims
1. A rectangular chip resistor comprising: an insulating substrate, a pair of first and second top electrodes disposed on a top surface of the insulating substrate each on either longitudinal end thereof, and a resistive element electrically in contact with said top electrodes, wherein each of said first and second top electrodes has, on its inner side facing to the other, a cutout part and a protruding part protruding with respect to the cutout part, with said cutout part in the first top electrode extending from at least one of two longitudinal sides of the insulating substrate, transversely inwards of the insulating substrate, and with said cutout part in the second top electrode being arranged substantially point-symmetrically to said cutout part in the first top electrode with respect to a center of the insulating substrate, wherein said resistive element has contacting regions each in contact with said first or second top electrode along the protruding part, and non-contacting regions each out of contact with said top electrodes along the cutout part, and wherein said resistive element has a trimming slot including a linear part extending from at least one point on said non-contacting regions along a longitudinal direction of the insulating substrate, wherein each protruding part of said first and second top electrodes is in a shape with two vertices, whereas said resistive element has contacting points in contact with said vertices, wherein said resistive element consists of a rectangular area enclosed by straight lines connecting said contacting points, and an area other than said rectangular area, wherein said area other than the rectangular area, which is out of contact with the first and second top electrodes, is a trimming-slot-forming area.
2. The rectangular chip resistor according to claim 1, wherein said resistive element has a trimming slot including a linear part extending from at least one point on one non-contacting region on a side of the first top electrode along a longitudinal direction of the insulating substrate, and a trimming slot including a linear part extending from at least one point on one non-contacting region on a side of the second top electrode along a longitudinal direction of the insulating substrate.
3. The rectangular chip resistor according to claim 1, wherein at least one trimming slot is in a shape having said linear part extending along a longitudinal direction of the insulating substrate, and a subsequent bend extending from a tip of said linear part, transversely outwards of the insulating substrate.
4. The rectangular chip resistor according to claim 1, wherein said trimming slot has microcracks.
5. The rectangular chip resistor according to claim 1, wherein an angle of one of two opposite pairs of angles of the rectangular area is 70 to 90.
6. A method for producing a rectangular chip resistor, comprising: (A) providing a pair of first and second top electrodes on a top surface of an insulating substrate each on either longitudinal end thereof, (B) providing a resistive element in electrical contact with said first and second top electrodes, and (C) forming a trimming slot in the resistive element for adjusting resistance, wherein in said step (A), said first top electrode is formed so as to have, on its inner side facing to said second top electrode, a cutout part extending from at least one of two longitudinal sides of the insulating substrate, transversely inwards of the insulating substrate, and a protruding part protruding with respect to the cutout part, and said second top electrode is formed so as to have, on its inner side facing to said first top electrode, a cutout part arranged substantially point-symmetrically to said cutout part in the first top electrode with respect to a center of the insulating substrate, and a protruding part protruding with respect to the cutout part, wherein in said step (B), said resistive element is provided in a shape having contacting regions each in contact with said first or second top electrode along the protruding part, and at least one non-contacting region for each top electrode out of contact therewith along the cutout part, and wherein in said step (C), each protruding part of said first and second top electrodes is in a shape with two vertices, whereas said resistive element has contacting points in contact with said vertices, wherein said resistive element consists of a rectangular area enclosed by straight lines connecting said contacting points, and an area other than said rectangular area, wherein said area other than the rectangular area, which is out of contact with the first and second top electrodes, is a trimming-slot-forming area, wherein said trimming slot is formed in said trimming-slot-forming area to include a linear part extending from at least one point on the non-contacting regions of the resistive element along a longitudinal direction of the insulating substrate, by laser trimming from said at least one point.
7. The method according to claim 6, wherein in said step (C), wherein at least one trimming slot is formed by laser trimming from said at least one point on the non-contacting regions along a longitudinal direction of the insulating substrate, and then by laser trimming in a direction bent transversely outwards of the insulating substrate.
8. The method according to claim 6, wherein in said step (C), in forming a plurality of trimming slots extending from a plurality of points on the non-contacting regions of the resistive element along a longitudinal direction of the insulating substrate, said trimming slots are formed by laser trimming so as to partly overlap one on another along a trimming direction.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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EMBODIMENTS OF THE INVENTION
(10) Embodiments of the present invention will now be explained with reference to the attached drawings, which do not limit the present invention.
(11)
(12) Referring to
(13) Referring to
(14) As used herein, substantially point-symmetrically means that not only the embodiments wherein the shapes of the first and second top electrodes are totally identical is encompassed, but also the embodiments wherein the shapes are generally the same is encompassed. For example, when the first and second top electrodes are formed by printing or the like means, even when the two electrodes are printed in the same shape in design, it is sometimes difficult to completely conform the shapes of the two electrodes due to some deformation. Further, it does not mean that the solution to the problem to be solved by the present invention is not achieved unless the first and second top electrodes are perfectly in the identical shape. Thus, the term substantially point-symmetrically means as discussed above, and the difference in shape between the first and second top electrodes may be tolerated as long as the problems to be solved by the present invention are solved.
(15) Referring to
(16) Referring to
(17) Each of the two cutout parts 11a of each of the first and second top electrodes (11x, 11y) in
(18) Referring to
(19) Each of the two cutout parts 21a of each of the first and second top electrodes (21x, 21y) in
(20) Referring to
(21) Each of the two cutout parts 31a of each of the first and second top electrodes (31x, 31y) in
(22)
(23) Referring to
(24) The parallelogram area (41, 51, 61) is preferably an area in which the trimming slots are not formed, so that the flow of the current from the first and second top electrodes (11x, 11y) is not disturbed. Thus, by securing such an area extensively, the desired objects of the present invention are more easily achieved. In view of this, angle indicated in the figures is preferably 70 to 90, more preferably 75 to 90, most preferably 80 to 90. By securing such an area (41, 51, 61) more extensively and employing the configuration to form the trimming slots in the particular direction in the trimming-slot-formed areas (42, 52, 62), the defects of current constriction at the trimming slots may be alleviated more sufficiently, the change in resistance may be kept still lower against overload voltage even when the rated power of the resistor is high, and the limiting power may be increased still more.
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(26) In the present resistor, for example as shown in FIG. 4, the trimming slots 43 start from the non-contacting region 12c, which is out of contact with the second top electrode 11y, and are formed in linear shape extending from the starting end, along the longitudinal direction of the insulating substrate 10, i.e., along the direction of the current flowing through the resistive element 12. Thus, the current constriction at the trimming slots 43 may be suppressed sufficiently.
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(31) According to the present resistor, the shape of the trimming slots may be selected from various shapes, as long as the shape includes a linear part extending along the longitudinal direction of the insulating substrate, and the number, length, width, and the like of the trimming slots may suitably be selected so as to form the slots in the above-mentioned predetermined locations for achieving the desired resistance.
(32) An embodiment for illustrating the configuration of the present resistor and an embodiment of the production method of the present invention will now be explained with reference to the drawings, but the method of producing the present invention is not limited to the production method of the present invention.
(33)
(34) On the under surface of the insulating substrate 80 are provided a pair of bottom electrodes 81z. The resistive element 82 is protected with a glass-type protective film 83a and a resin-type protective film 83b, as shown in the figure. Though not shown, the resistive element 82 is provided with trimming slots, as discussed with reference to
(35) The first and second top electrodes (81x, 81y) and the bottom electrodes 81z are connected with end electrodes 84. The top, bottom, and end electrodes are coated with a nickel plated layer 85, which is coated with a tin plated layer 86 as overcoating.
(36) The configuration illustrated in
(37) The production method according to the present invention includes: (A) providing a pair of first and second top electrodes on the top surface of an insulating substrate each on either longitudinal end thereof, (B) providing a resistive element in electrical contact with the first and second top electrodes, and (C) forming a trimming slot in the resistive element for adjusting resistance. In the following, each step is explained with reference to an example wherein the cutout parts and the like are formed by screen printing, but formation by other means, such as laser patterning or etching, are also encompassed by the present invention.
(38) In steps (A) and (B), the top electrodes and the resistive element may be formed on the insulating substrate by, usually, screen printing or the like means, so as to be in the desired shapes as discussed above.
(39) In step (A), the first top electrode is formed so as to have, on its inner side facing to the second top electrode, a cutout part extending from at least one of the two longitudinal sides of the insulating substrate, transversely inwards of the insulating substrate, and a protruding part protruding with respect to the cutout part, whereas the second top electrode is formed so as to have, on its inner side facing to the first top electrode, a cutout part arranged substantially point-symmetrically to the cutout part in the first top electrode with respect to the center of the insulating substrate, and a protruding part protruding with respect to the cutout part. Here, the cutout parts have been explained to be formed by screen printing, but may alternatively be formed by laser patterning or etching, after the top electrodes are formed.
(40) In step (B), the resistive element is provided in a shape having contacting regions each in contact with the first or second top electrode along the protruding part, and at least one non-contacting region for each top electrode out of contact therewith along the cutout part.
(41) The desired shapes of the top electrodes and the resistive element formed in this way are as discussed above with reference to
(42) In step (C), the trimming slot may be formed by a conventional manner, for example, laser cutting while the resistance is measured with probes in contact with the resistive element, as discussed above.
(43) In step (C), the trimming slot is formed to include a linear part extending from at least one point on the non-contacting regions of the resistive element along the longitudinal direction of the insulating substrate, by laser trimming from the at least one point, as discussed above with reference to
(44) According to the production method of the present invention, the present resistor may be produced by performing, in addition to steps (A) to (C), steps of, for example, forming bottom and end electrodes, protective films, and plated layers by conventional manners or the like, as discussed above with reference to
EXAMPLES
(45) The present invention will now be explained in further detail with reference to examples, which however, do not limit the present invention.
Examples 1-1 to 1-3
(46) Resistors as shown in
(47) In Example 1-1 the angle in
(48) The short time overload test was conducted on each resistor thus produced, by applying a voltage 2.5 times the rated voltage for 5 seconds, i.e., 14.14V on the resistor with the rated power of 0.1 W, 22.36 V on the resistor with the rated power of 0.25 W, 25.69 V on the resistor with the rated power of 0.33 W, and 28.28 V on the resistor with the rated power of 0.4 W, respectively, and measuring the maximum, minimum, and mean values of the resistance change ratio (R/R). The results are shown in Table 1. The resistors exhibiting the resistance change ratio of within 1.0% passed the test. Incidentally, the blanks in Table 1 mean incapable of measurement.
Comparative Example 1
(49) A resistor was produced in the same way as in Example 1-1, except that the top electrodes and the resistive element were those shown in
(50) TABLE-US-00001 TABLE 1 Rated Resistance power change ratio Comp. Ex. 1 Ex. 1-1 Ex. 1-2 Ex. 1-3 (W) R/R (%) = 70 = 79 = 87 0.1 Max. 0.00 0.00 +0.01 0.00 Min. 0.03 0.01 0.02 0.03 Mean 0.01 0.00 0.01 0.01 0.25 Max. +0.22 +0.27 0.09 0.01 Min. 0.10 0.18 0.14 0.01 Mean +0.02 0.07 0.11 0.01 0.33 Max. +0.47 +0.33 0.03 Min. 0.21 0.31 0.04 Mean +0.21 +0.01 0.03 0.4 Max. +4.51 0.05 Min. +2.34 0.07 Mean +3.63 0.06
(51) The results shown in Table 1 indicate that the resistors of the present invention are excellent in tolerance to overload voltage even with higher rated powers, compared to the resistor of Comparative Example. It is also shown that this advantage is further improved in the present resistors at larger .
Examples 2-1 to 2-3 and Comparative Example 2
(52) Resistors with a rated power of 0.1 W, 0.25 W, and 0.33 W, respectively, were produced in the same way as in Examples 1-1 to 1-3 and Comparative Example 1.
(53) The intermittent overload test was conducted on each resistor thus produced, by performing 10000 cycles of application of a voltage 2.5 times the rated voltage for 1 second and non-application of a voltage for 25 seconds, and measuring the maximum, minimum, and mean values of the resistance change ratio (R/R). The results are shown in Table 2. The resistors exhibiting the resistance change ratio of within 1.0% passed the test. Incidentally, the blanks in Table 2 mean incapable of measurement.
(54) TABLE-US-00002 TABLE 2 Rated Resistance power change ratio Comp. Ex. 2 Ex. 2-1 Ex. 2-2 Ex. 2-3 (W) R/R (%) = 70 = 79 = 87 0.1 Max. +0.04 +0.03 +0.05 0.00 Min. 0.06 0.00 0.06 0.03 Mean 0.00 +0.02 +0.02 0.01 0.25 Max. 0.02 0.01 Min. 0.06 0.01 Mean 0.04 0.00 0.33 Max. +5.50 +0.20 Min. +1.30 0.03 Mean +2.50 +0.03
(55) The results shown in Table 2 indicate that the resistors of the present invention are more excellent in tolerance at larger even with higher rated powers in the intermittent overload test.
Examples 3-1 to 3-3 and Comparative Example 3
(56) Resistors were produced in the same way as in Examples 1-1 to 1-3 and Comparative Example 1.
(57) The resistors thus produced were measured of the one pulse limiting power (voltage Vapplication time t=limiting power (W)) by applying voltage V for application time 1 ms. The results are shown in Table 3. The limiting power was taken from those of the resistance change ratio of within 1.0%.
(58) TABLE-US-00003 TABLE 3 Application Comp. Ex. 3 Ex. 3-1 Ex. 3-2 Ex. 3-3 time = 70 = 79 = 87 1 ms Limiting 6.5 6.5 18 38 power (W)
(59) The results shown in Table 3 indicate that, in the resistors of the present invention, the limiting power may be increased by controlling the angle .
Examples 4-1 to 4-3 and Comparative Example 4
(60) Resistors were produced in the same way as in Examples 1-1 to 1-3 and Comparative Example 1.
(61) The current-noise test for fixed resistors was conducted on each resistor thus produced according to JIS C 5201-1 to measure the noise voltage generated by the resistor, and the maximum, minimum, and mean values of the noise voltage were obtained by calculation with predetermined formulae. Further, the noise from the maximum to minimum values was obtained. The results are shown in Table 4. The results are indicated as ratios of the noise voltage with respect to the applied direct-current voltage, and negative values with larger absolute values indicate better results.
(62) TABLE-US-00004 TABLE 4 Resistance change ratio Comp. Ex. 4 Ex. 4-1 Ex. 4-2 Ex. 4-3 R/R (%) = 70 = 79 = 87 Max. 3.8 11.3 12.9 22.0 Min. 13.2 13.5 14.8 23.4 Mean 10.0 12.6 14.0 22.9 Max Min 9.4 2.2 1.9 1.4
(63) The results in Table 4 indicate that the noise voltage is suppressed in the present resistors compared to that of the Comparative Example, and this trend is more significant particularly at larger angle .
DESCRIPTION OF REFERENCE NUMERALS
(64) 10, 20, 30, 80: insulating substrate 11x, 21x, 31x, 81x: first top electrode 11y, 21y, 31y, 81y: second top electrode 12, 22, 32, 82: resistive element 11a, 21a, 31a: cutout part 11b, 21b, 32b: protruding part 12b, 22b, 32b: contacting region 12c, 22c, 32c: non-contacting region 43, 53a, 53b, 63, 70, 71: trimming slot 41, 51, 61: parallelogram area 42, 52, 62: trimming-slot-formed area