COPPER OR COPPER ALLOY TARGET CONTAINING ARGON OR HYDROGEN

Abstract

Provided is a sputtering target formed from copper or a copper alloy, and the sputtering target contains either argon or hydrogen, or both, each in an amount of 1 wtppm or more and 10 wtppm or less. An object of the embodiment of the present invention is to provide a copper or copper alloy sputtering target which is capable of stably maintaining discharge even under conditions such as low pressure and low gas flow rate where it is difficult to continuously maintain sputtering discharge.

Claims

1. A sputtering target formed from copper or a copper alloy containing 1 wtppm or more and 10 wtppm or less of argon, or 1 wtppm or more and 10 wtppm or less each of both argon and hydrogen, or 1.2 wtppm or more and 2.1 wtppm or less of hydrogen.

2. The sputtering target according to claim 1, wherein the sputtering target contains only argon and not hydrogen.

3. The sputtering target according to claim 1, wherein the sputtering target contains only hydrogen and not argon.

4. The sputtering target according to claim 1, wherein the sputtering target contains both argon and hydrogen.

5. The sputtering target according to claim 4, wherein the sputtering target is formed from a copper alloy containing either aluminum or manganese.

6. The sputtering target according to claim 5, wherein the copper alloy is a copper alloy which contains 0.1 to 5 wt % of aluminum, or 0.1 to 15 wt % of manganese.

7. A method of producing the sputtering target according to claim 1, the method comprising: preparing a copper or copper alloy raw material; melting the prepared raw material in an atmosphere into which argon and/or hydrogen was introduced; cooling and solidifying the melted raw material into a copper or copper alloy ingot; and processing the ingot into a sputtering target.

8. The sputtering target according to claim 3, wherein the sputtering target is formed from a copper alloy containing either aluminum or manganese.

9. The sputtering target according to claim 8, wherein the copper alloy is a copper alloy which contains 0.1 to 5 wt % of aluminum, or 0.1 to 15 wt % of manganese.

10. The sputtering target according to claim 2, wherein the sputtering target is formed from a copper alloy containing either aluminum or manganese.

11. The sputtering target according to claim 10, wherein the copper alloy is a copper alloy which contains 0.1 to 5 wt % of aluminum, or 0.1 to 15 wt % of manganese.

Description

DESCRIPTION OF EMBODIMENTS

[0014] The sputtering target of the embodiment of the present invention is characterized in that its base material formed from pure Cu excluding unavoidable impurities, or a Cu alloy obtained by adding elements such as Al, Mn, Sn, Ti, and Zn to Cu in a predetermined composition ratio, contains argon and/or hydrogen each in an amount of 1 wtppm or more and 10 wtppm or less. It is considered that the atoms of Ar or H contained in the foregoing target base material are intermittently discharged from the target surface during sputtering, and cause a state where the density of the discharge gas is locally high near the target surface. Accordingly, even in a state where the discharge gas pressure in the deposition chamber is low other than near the target surface, gas components that contribute to discharge near the target surface where discharge is generated will exist in a relatively large amount, and, consequently, discharge can be continued in the overall deposition chamber even under low pressure conditions in which the continuation of discharge is difficult.

[0015] The amount of Ar or H in the sputtering target needs to be 1 wtppm or more for each of Ar or H that is contained. When the amount of Ar or H is less than 1 wtppm, the amount required for continuing the discharge will be insufficient, and there is a possibility that the plasma cannot be stably maintained. From the perspective of discharge duration, the amount of Ar or H in the sputtering target is preferably 1.5 wtppm or more, and may be 2 wtppm or more, for each of Ar or H that is contained. Nevertheless, if the amount of Ar or H in the sputtering target is excessive, the discharge may become unstable, abnormal discharge such as arcing may occur, and there may be adverse effects from the inclusion of Ar or H in the deposited Cu or Cu alloy layer. Thus, the upper limit of the Ar or H content is 10 wtppm. This upper limit of the Ar or H content is preferably 8 ppm or less, and more preferably 5 ppm or less.

[0016] In order to improve the discharge stability under low pressure, it is preferable to add Ar in which the electron-based ionization cross section is large and the ionization potential is small. Ar is relatively inexpensive among rare gases, and is an element with favorable characteristics that contribute to ionization as described above. Ar, which is once discharged from the target surface and becomes ionized, may once again reach the plasma sheath of the target surface, and contribute to the sputtering of the Cu or Cu alloy of the target material.

[0017] By adding H to the sputtering target in cases where oxygen is contained as an impurity in the sputtering target or the deposition atmosphere, it is possible to reduce the amount of oxygen that becomes included in the deposited Cu or Cu alloy layer, since H exhibits reduction. Whether Ar and/or H should be included in the sputtering target and the content thereof can be suitably selected and adjusted by giving consideration to the foregoing effects. In order to improve the discharge stability as well as reduce the amount of oxygen in the deposited Cu or Cu alloy layer, it would be preferable to include both Ar and H in the sputtering target.

[0018] When the base material of the sputtering target of the embodiment of the present invention is formed from a Cu alloy, the Cu alloy is preferably a Cu alloy which contains either Al or Mn. When Cu is used as the wire material of an LSI or the like, a diffusion barrier layer for preventing the diffusion of Cu is required as described above, but as a result of adding Mn to Cu, it is possible to cause Cu to self-form a diffusion barrier layer as a result of Mn reacting with the oxygen in the oxide insulation layer of the interlayer insulating film or the element separation film. Moreover, as a result of adding Al to Cu, it is possible to suppress electro migration in the Cu wire which is becoming notable due to the further refinement of the Cu wire. In order to sufficiently exhibit the foregoing effects, Mn or Al is contained in an amount of 0.1 at % or more, and preferably in an amount of 0.5 at % or more. However, if the additive amount of Mn or Al is excessive, the resistivity will deteriorate and the inherent technical advantage of the Cu wire may become lost. Thus, the upper limit of the content is preferably 5 at % for Al, and 15 at % for Mn.

[0019] The sputtering target of the embodiment of the present invention is not limited to a specific production method, and may be produced based on any kind of method so as long as the sputtering target is able to contain Ar and/or H each in an amount of 1 wtppm or more and 10 wtppm or less. In order to produce this kind of sputtering target having the foregoing Ar or H content, it would be effective to produce, as the Cu or Cu alloy ingot to become the target base material, a Cu or Cu alloy ingot containing Ar and/or H each in an amount of 1 wtppm or more and 10 wtppm or less. As an example of a method of producing this kind of ingot, considered may be a method of introducing Ar or H into the atmosphere upon producing the Cu or Cu alloy ingot via melting/casting.

[0020] A Cu or Cu alloy ingot to become the base material of the sputtering target is generally produced by melting/casting elementary Cu metal as the raw material, upon adding elementary metals as the alloy element source other than Cu as needed. Moreover, a material in which Cu and other metal elements have already been alloyed at the stage of the raw material may also be used. Argon gas or hydrogen (H.sub.2) gas is blown onto the molten metal during the melting/casting process. As the gases to be used, preferably, high purity argon gas and high purity hydrogen gas are respectively used. The amount of Ar and/or H to be introduced into the cast ingot can be adjusted by controlling the atmospheric composition, pressure, flow rate and other factors during the casting process. The foregoing parameters are controlled and adjusted so that Ar or H can be contained in the ingot as the base material of the sputtering target.

[0021] In order to blow argon gas or hydrogen gas onto the molten metal during the melting/casting of the raw material, various methods that have been put into practical application as the copper melting/casting method may be used; for instance, the method of blowing these gases during the heating and melting of the raw material in a heating/melting furnace in which the atmosphere can be controlled, the method of blowing these gases in a holding furnace of the raw material molten metal after the heating and melting process, the method of circulating these gases in the atmosphere or blowing these gases on the molten metal surface during an electrical melting process such as high-frequency induction heating or electron beam melting, or the method of circulating these gases in the atmosphere or blowing these gases on the molten metal surface during the heating and melting process using a plasma torch or the like.

[0022] In this way, Cu or Cu alloy ingot containing the target amount of Ar or H is processed, as needed, into a sputtering target. Here, while it goes without saying that forging, rolling and other processing, as well as heat treatment, for controlling the microstructure may be performed in addition to processes such as cutting and surface polishing for adjusting the ingot to obtain the final shape, the content of Ar or H needs to be 1 wtppm or more and 10 wtppm or less at the time the sputtering target is obtained after undergoing the final process.

[0023] According to an embodiment of the present invention, the content of Ar in the Cu or Cu alloy base material refers to the analytical value based on quantitative analysis using an analyzer (TC-436 manufactured by LECO) based on the inert gas melting-thermal conductivity method, and the content of H refers to the analytical value based on quantitative analysis using an analyzer (CS-444 manufactured by LECO) based on the non-dispersive infrared absorption method.

EXAMPLES

[0024] The embodiment of the present invention is described in detail based on the Examples and Comparative Examples. The following Examples and Comparative Examples are merely specific examples to facilitate the understanding of the technical aspects of the present invention, and the technical scope of the present invention shall not be limited by these specific examples.

Example 1

[0025] High purity Cu having a purity of 6N was used as a raw material, and it was heated and melted to obtain a raw material molten metal. During the heating and melting of the raw material, H.sub.2 gas was continuously blown at a flow rate of 0.7 scfm (19.81 slm) and Ar gas was continuously blown at a flow rate of 24 scfm (679.2 slm) from a gas blowing nozzle having a circular blowing port shape, in which the diameter thereof is 5 mm, toward a surface of the raw material molten metal upon setting a shortest distance between a tip of the blowing port and the molten metal surface to be 100 mm. After the melting process, the molten metal was cooled to obtain a cast ingot. After the cast ingot was taken out, it was processed into a shape having a diameter of 440 mm and a thickness of 12 mm to form a Cu sputtering target. As a result of analyzing the contents of Ar and H in this sputtering target, the H content was 2 wtppm and the Ar content was 1.5 wtppm.

[0026] Further, an evaluation test of the discharge stability was performed to this sputtering target. The evaluation method in this test included the steps of mounting the target on a magnetron cathode of a sputtering device, evacuating the chamber up to a base vacuum degree (base pressure), thereafter introducing Ar at a flow rate of 4 sccm, and measuring the continuous duration of the plasma that was generated by applying a voltage of 38 kW to the target in this state. The evaluation time was set to 350 seconds at the maximum and the results are shown in Table 1. With the target of Example 1, the plasma was able to be continuously and stably maintained for a period of 350 seconds as the maximum evaluation time.

Example 2

[0027] High purity Cu having a purity of 6N was used as a raw material, and it was heated and melted to obtain a raw material molten metal. During the heating and melting of the raw material, H.sub.2 gas was continuously blown at a flow rate of 0.4 scfm (11.32 slm) and Ar gas was continuously blown at a flow rate of 14 scfm (396.2 slm) from a gas blowing nozzle having a rectangular blowing port shape, in which the long side thereof is 8 mm and the short side thereof is 3 mm, toward a surface of the raw material molten metal upon setting a shortest distance between a tip of the blowing port and the molten metal surface to be 120 mm. After the melting process, the molten metal was cooled to obtain a cast ingot. After the cast ingot was taken out, it was processed into a shape having a diameter of 440 mm and a thickness of 12 mm to form a Cu sputtering target. As a result of analyzing the contents of Ar and H in this sputtering target, the H content was 1.2 wtppm and the Ar content was 1 wtppm. Further, in the evaluation test of the discharge stability performed in the same manner as Example 1 regarding this sputtering target, the continuous duration of the plasma was 320 seconds.

Example 3

[0028] High purity Cu having a purity of 6N was used as a raw material, and it was heated and melted to obtain a raw material molten metal. During the heating and melting of the raw material, H.sub.2 gas was continuously blown at a flow rate of 0 scfm (0 slm) and Ar gas was continuously blown at a flow rate of 8 scfm (226.4 slm) from a gas blowing nozzle having an oval blowing port shape, in which the major axis thereof is 10 mm and the minor axis thereof is 4 mm, toward a surface of the raw material molten metal upon setting a shortest distance between a tip of the blowing port and the molten metal surface to be 90 mm. After the melting process, the molten metal was cooled to obtain a cast ingot. After the cast ingot was taken out, it was processed into a shape having a diameter of 440 mm and a thickness of 12 mm to form a Cu sputtering target. As a result of analyzing the contents of Ar and H in this sputtering target, the H content was less than 1 wtppm, which is below the detection limit, and the Ar content was 1.2 wtppm. Further, in the evaluation test of the discharge stability performed in the same manner as Example 1 regarding this sputtering target, the continuous duration of the plasma was 314 seconds.

Example 4

[0029] High purity Cu having a purity of 6N was used as a raw material, and it was heated and melted to obtain a raw material molten metal. During the heating and melting of the raw material, H.sub.2 gas was continuously blown at a flow rate of 0.5 scfm (14.15 slm) and Ar gas was continuously blown at a flow rate of 0 scfm (0 slm) from a gas blowing nozzle having an isosceles triangle blowing port shape, in which the base thereof is 10 mm and the height thereof is 10 mm, toward a surface of the raw material molten metal upon setting a shortest distance between a tip of the blowing port and the molten metal surface to be 110 mm. After the melting process, the molten metal was cooled to obtain a cast ingot. After the cast ingot was taken out, it was processed into a shape having a diameter of 440 mm and a thickness of 12 mm to form a Cu sputtering target. As a result of analyzing the contents of Ar and H in this sputtering target, the H content was 1.2 wtppm and the Ar content was less than 1 wtppm, which is below the detection limit. Further, in the evaluation test of the discharge stability performed in the same manner as Example 1 regarding this sputtering target, the continuous duration of the plasma was 307 seconds.

Example 5

[0030] 0.1 wt % of high purity Al having a purity of 5N or higher was added to high purity Cu having a purity of 6N and this was used as a raw material, and it was heated and melted to obtain a raw material molten metal. During the heating and melting of the raw material, H.sub.2 gas was continuously blown at a flow rate of 0.3 scfm (8.49 slm) and Ar gas was continuously blown at a flow rate of 10 scfm (283 slm) from a gas blowing nozzle having a circular blowing port shape, in which the diameter thereof is 7 mm, toward a surface of the raw material molten metal upon setting a shortest distance between a tip of the blowing port and the molten metal surface to be 120 mm. After the melting process, the molten metal was cooled to obtain a cast ingot. After the cast ingot was taken out, it was processed into a shape having a diameter of 440 mm and a thickness of 12 mm to form a Cu sputtering target. As a result of analyzing the contents of Ar and H in this sputtering target, the H content was 1.5 wtppm and the Ar content was 1 wtppm. Further, in the evaluation test of the discharge stability performed in the same manner as Example 1 regarding this sputtering target, the continuous duration of the plasma was 299 seconds.

Example 6

[0031] 1.0 wt % of high purity Al having a purity of 5N or higher was added to high purity Cu having a purity of 6N and this was used as a raw material, and it was heated and melted to obtain a raw material molten metal. During the heating and melting of the raw material, H.sub.2 gas was continuously blown at a flow rate of 0.2 scfm (8.49 slm) and Ar gas was continuously blown at a flow rate of 8 scfm (283 slm) from a gas blowing nozzle having a circular blowing port shape, in which the diameter thereof is 10 mm, toward a surface of the raw material molten metal upon setting a shortest distance between a tip of the blowing port and the molten metal surface to be 130 mm. After the melting process, the molten metal was cooled to obtain a cast ingot. After the cast ingot was taken out, it was processed into a shape having a diameter of 440 mm and a thickness of 12 mm to form a Cu sputtering target. As a result of analyzing the contents of Ar and H in this sputtering target, the H content was 1.4 wtppm and the Ar content was 1 wtppm. Further, in the evaluation test of the discharge stability performed in the same manner as Example 1 regarding this sputtering target, the continuous duration of the plasma was 304 seconds.

Example 7

[0032] 5.0 wt % of high purity Al having a purity of 5N or higher was added to high purity Cu having a purity of 6N and this was used as a raw material, and it was heated and melted to obtain a raw material molten metal. During the heating and melting of the raw material, H.sub.2 gas was continuously blown at a flow rate of 0.5 scfm (14.15 slm) and Ar gas was continuously blown at a flow rate of 16 scfm (452.8 slm) from a gas blowing nozzle having an oval blowing port shape, in which the major axis thereof is 15 mm and the minor axis thereof is 10 mm, toward a surface of the raw material molten metal upon setting a shortest distance between a tip of the blowing port and the molten metal surface to be 80 mm. After the melting process, the molten metal was cooled to obtain a cast ingot. After the cast ingot was taken out, it was processed into a shape having a diameter of 440 mm and a thickness of 12 mm to form a Cu sputtering target. As a result of analyzing the contents of Ar and H in this sputtering target, the H content was 2.1 wtppm and the Ar content was 2 wtppm. Further, in the evaluation test of the discharge stability performed in the same manner as Example 1 regarding this sputtering target, the continuous duration of the plasma was 311 seconds.

Example 8

[0033] 3.0 wt % of high purity Al having a purity of 5N or higher was added to high purity Cu having a purity of 6N and this was used as a raw material, and it was heated and melted to obtain a raw material molten metal. During the heating and melting of the raw material, H.sub.2 gas was continuously blown at a flow rate of 0 scfm (0 slm) and Ar gas was continuously blown at a flow rate of 10 scfm (283 slm) from a gas blowing nozzle having an isosceles triangle blowing port shape, in which the base thereof is 15 mm and the height thereof is 10 mm, toward a surface of the raw material molten metal upon setting a shortest distance between a tip of the blowing port and the molten metal surface to be 110 mm. After the melting process, the molten metal was cooled to obtain a cast ingot. After the cast ingot was taken out, it was processed into a shape having a diameter of 440 mm and a thickness of 12 mm to form a Cu sputtering target. As a result of analyzing the contents of Ar and H in this sputtering target, the H content was less than 1 wtppm, which is below the detection limit, and the Ar content was 1.3 wtppm. Further, in the evaluation test of the discharge stability performed in the same manner as Example 1 regarding this sputtering target, the continuous duration of the plasma was 305 seconds.

Example 9

[0034] 0.5 wt % of high purity Al having a purity of 5N or higher was added to high purity Cu having a purity of 6N and this was used as a raw material, and it was heated and melted to obtain a raw material molten metal. During the heating and melting of the raw material, H.sub.2 gas was continuously blown at a flow rate of 0.4 scfm (11.32 slm) and Ar gas was continuously blown at a flow rate of 0 scfm (0 slm) from a gas blowing nozzle having a quadrangular blowing port shape, in which the long side thereof is 15 mm and the short side thereof is 10 mm, toward a surface of the raw material molten metal upon setting a shortest distance between a tip of the blowing port and the molten metal surface to be 130 mm. After the melting process, the molten metal was cooled to obtain a cast ingot. After the cast ingot was taken out, it was processed into a shape having a diameter of 440 mm and a thickness of 12 mm to form a Cu sputtering target. As a result of analyzing the contents of Ar and H in this sputtering target, the H content was 1.3 wtppm and the Ar content was less than 1 wtppm, which is below the detection limit. Further, in the evaluation test of the discharge stability performed in the same manner as Example 1 regarding this sputtering target, the continuous duration of the plasma was 296 seconds.

Example 10

[0035] 0.1 wt % of high purity Mn having a purity of 4N or higher was added to high purity Cu having a purity of 6N and this was used as a raw material, and it was heated and melted to obtain a raw material molten metal. During the heating and melting of the raw material, H.sub.2 gas was continuously blown at a flow rate of 0.3 scfm (8.49 slm) and Ar gas was continuously blown at a flow rate of 10 scfm (283 slm) from a gas blowing nozzle having a quadrangular blowing port shape, in which the long side thereof is 15 mm and the short side thereof is 10 mm, toward a surface of the raw material molten metal upon setting a shortest distance between a tip of the blowing port and the molten metal surface to be 90 mm. After the melting process, the molten metal was cooled to obtain a cast ingot. After the cast ingot was taken out, it was processed into a shape having a diameter of 440 mm and a thickness of 12 mm to form a Cu sputtering target. As a result of analyzing the contents of Ar and H in this sputtering target, the H content was 1.2 wtppm and the Ar content was 1.4 wtppm. Further, in the evaluation test of the discharge stability performed in the same manner as Example 1 regarding this sputtering target, the continuous duration of the plasma was 334 seconds.

Example 11

[0036] 2.0 wt % of high purity Mn having a purity of 4N or higher was added to high purity Cu having a purity of 6N and this was used as a raw material, and it was heated and melted to obtain a raw material molten metal. During the heating and melting of the raw material, H.sub.2 gas was continuously blown at a flow rate of 0.5 scfm (14.15 slm) and Ar gas was continuously blown at a flow rate of 17 scfm (481.1 slm) from a gas blowing nozzle having an isosceles triangle blowing port shape, in which the base thereof is 12 mm and the height thereof is 8 mm, toward a surface of the raw material molten metal upon setting a shortest distance between a tip of the blowing port and the molten metal surface to be 50 mm. After the melting process, the molten metal was cooled to obtain a cast ingot. After the cast ingot was taken out, it was processed into a shape having a diameter of 440 mm and a thickness of 12 mm to form a Cu sputtering target. As a result of analyzing the contents of Ar and H in this sputtering target, the H content was 1.8 wtppm and the Ar content was 1.5 wtppm. Further, in the evaluation test of the discharge stability performed in the same manner as Example 1 regarding this sputtering target, the continuous duration of the plasma was 305 seconds.

Example 12

[0037] 15 wt % of high purity Mn having a purity of 4N or higher was added to high purity Cu having a purity of 6N and this was used as a raw material, and it was heated and melted to obtain a raw material molten metal. During the heating and melting of the raw material, H.sub.2 gas was continuously blown at a flow rate of 0.4 scfm (11.32 slm) and Ar gas was continuously blown at a flow rate of 15 scfm (424.5 slm) from a gas blowing nozzle having an oval blowing port shape, in which the long side thereof is 20 mm and the short side thereof is 10 mm, toward a surface of the raw material molten metal upon setting a shortest distance between a tip of the blowing port and the molten metal surface to be 100 mm. After the melting process, the molten metal was cooled to obtain a cast ingot. After the cast ingot was taken out, it was processed into a shape having a diameter of 440 mm and a thickness of 12 mm to form a Cu sputtering target. As a result of analyzing the contents of Ar and H in this sputtering target, the H content was 1.5 wtppm and the Ar content was 1 wtppm. Further, in the evaluation test of the discharge stability performed in the same manner as Example 1 regarding this sputtering target, the continuous duration of the plasma was 289 seconds.

Example 13

[0038] 8.0 wt % of high purity Mn having a purity of 4N or higher was added to high purity Cu having a purity of 6N and this was used as a raw material, and it was heated and melted to obtain a raw material molten metal. During the heating and melting of the raw material, H.sub.2 gas was continuously blown at a flow rate of 0 scfm (0 slm) and Ar gas was continuously blown at a flow rate of 6 scfm (169.8 slm) from a gas blowing nozzle having a square blowing port shape, in which one side thereof is 5 mm, toward a surface of the raw material molten metal upon setting a shortest distance between a tip of the blowing port and the molten metal surface to be 80 mm. After the melting process, the molten metal was cooled to obtain a cast ingot. After the cast ingot was taken out, it was processed into a shape having a diameter of 440 mm and a thickness of 12 mm to form a Cu sputtering target. As a result of analyzing the contents of Ar and H in this sputtering target, the H content was less than 1 wtppm, which is below the detection limit, and the Ar content was 1.4 wtppm. Further, in the evaluation test of the discharge stability performed in the same manner as Example 1 regarding this sputtering target, the continuous duration of the plasma was 300 seconds.

Example 14

[0039] 1.0 wt % of high purity Mn having a purity of 4N or higher was added to high purity Cu having a purity of 6N and this was used as a raw material, and it was heated and melted to obtain a raw material molten metal. During the heating and melting of the raw material, H.sub.2 gas was continuously blown at a flow rate of 0.3 scfm (8.49 slm) and Ar gas was continuously blown at a flow rate of 0 scfm (0 slm) from a gas blowing nozzle having a circular blowing port shape, in which the diameter is 8 mm, toward a surface of the raw material molten metal upon setting a shortest distance between a tip of the blowing port and the molten metal surface to be 90 mm. After the melting process, the molten metal was cooled to obtain a cast ingot. After the cast ingot was taken out, it was processed into a shape having a diameter of 440 mm and a thickness of 12 mm to form a Cu sputtering target. As a result of analyzing the contents of Ar and H in this sputtering target, the H content was 1.2 wtppm and the Ar content was less than 1 wtppm, which is below the detection limit. Further, in the evaluation test of the discharge stability performed in the same manner as Example 1 regarding this sputtering target, the continuous duration of the plasma was 280 seconds.

Comparative Example 1

[0040] High purity Cu having a purity of 6N was used as a raw material, and it was heated and melted to obtain a raw material molten metal. During the heating and melting of the raw material, H.sub.2 gas was continuously blown at a flow rate of 0 scfm (0 slm) and Ar gas was continuously blown at a flow rate of 6 scfm (169.8 slm) from a gas blowing nozzle having a circular blowing port shape, in which the diameter thereof is 5 mm, toward a surface of the raw material molten metal upon setting a shortest distance between a tip of the blowing port and the molten metal surface to be 500 mm. After the melting process, the molten metal was cooled to obtain a cast ingot. After the cast ingot was taken out, it was processed into a shape having a diameter of 440 mm and a thickness of 12 mm to form a Cu sputtering target. As a result of analyzing the contents of Ar and H in this sputtering target, the H content and the Ar content were both less than 1 wtppm, which is below the detection limit. Further, in the evaluation test of the discharge stability performed in the same manner as Example 1 regarding this sputtering target, the continuous duration of the plasma was 135 seconds, and considerably shorter in comparison to the respective Examples.

Comparative Example 2

[0041] High purity Cu having a purity of 6N was used as a raw material, and it was heated and melted to obtain a raw material molten metal. During the heating and melting of the raw material, H.sub.2 gas was continuously blown at a flow rate of 0.5 scfm (14.15 slm) and Ar gas was continuously blown at a flow rate of 0 scfm (0 slm) from a gas blowing nozzle having a circular blowing port shape, in which the diameter thereof is 50 mm, toward a surface of the raw material molten metal upon setting a shortest distance between a tip of the blowing port and the molten metal surface to be 200 mm. After the melting process, the molten metal was cooled to obtain a cast ingot. After the cast ingot was taken out, it was processed into a shape having a diameter of 440 mm and a thickness of 12 mm to form a Cu sputtering target. As a result of analyzing the contents of Ar and H in this sputtering target, the H content and the Ar content were both less than 1 wtppm, which is below the detection limit. Further, in the evaluation test of the discharge stability performed in the same manner as Example 1 regarding this sputtering target, the continuous duration of the plasma was 125 seconds, and considerably shorter in comparison to the respective Examples.

Comparative Example 3

[0042] 2.0 wt % of high purity Al having a purity of 5N or higher was added to high purity Cu having a purity of 6N and this was used as a raw material, and it was heated and melted to obtain a raw material molten metal. During the heating and melting of the raw material, H.sub.2 gas was continuously blown at a flow rate of 0.3 scfm (8.49 slm) and Ar gas was continuously blown at a flow rate of 10 scfm (283 slm) from a gas blowing nozzle having a circular blowing port shape, in which the diameter thereof is 50 mm, toward a surface of the raw material molten metal upon setting a shortest distance between a tip of the blowing port and the molten metal surface to be 200 mm. After the melting process, the molten metal was cooled to obtain a cast ingot. After the cast ingot was taken out, it was processed into a shape having a diameter of 440 mm and a thickness of 12 mm to form a Cu sputtering target. As a result of analyzing the contents of Ar and H in this sputtering target, the H content and the Ar content were both less than 1 wtppm, which is below the detection limit. Further, in the evaluation test of the discharge stability performed in the same manner as Example 1 regarding this sputtering target, the continuous duration of the plasma was only 87 seconds, and considerably shorter in comparison to the respective Examples.

Comparative Example 4

[0043] 0.5 wt % of high purity Al having a purity of 5N or higher was added to high purity Cu having a purity of 6N and this was used as a raw material, and it was heated and melted to obtain a raw material molten metal. During the heating and melting of the raw material, H.sub.2 gas was continuously blown at a flow rate of 0 scfm (0 slm) and Ar gas was continuously blown at a flow rate of 6 scfm (169.8 slm) from a gas blowing nozzle having a circular blowing port shape, in which the diameter thereof is 5 mm, toward a surface of the raw material molten metal upon setting a shortest distance between a tip of the blowing port and the molten metal surface to be 500 mm. After the melting process, the molten metal was cooled to obtain a cast ingot. After the cast ingot was taken out, it was processed into a shape having a diameter of 440 mm and a thickness of 12 mm to form a Cu sputtering target. As a result of analyzing the contents of Ar and H in this sputtering target, the H content and the Ar content were both less than 1 wtppm, which is below the detection limit. Further, in the evaluation test of the discharge stability performed in the same manner as Example 1 regarding this sputtering target, the continuous duration of the plasma was 122 seconds, and considerably shorter in comparison to the respective Examples.

Comparative Example 5

[0044] 0.1 wt % of high purity Mn having a purity of 4N or higher was added to high purity Cu having a purity of 6N and this was used as a raw material, and it was heated and melted to obtain a raw material molten metal. During the heating and melting of the raw material, H.sub.2 gas was continuously blown at a flow rate of 0.4 scfm (11.32 slm) and Ar gas was continuously blown at a flow rate of 14 scfm (396.2 slm) from a gas blowing nozzle having a circular blowing port shape, in which the diameter thereof is 50 mm, toward a surface of the raw material molten metal upon setting a shortest distance between a tip of the blowing port and the molten metal surface to be 200 mm. After the melting process, the molten metal was cooled to obtain a cast ingot. After the cast ingot was taken out, it was processed into a shape having a diameter of 440 mm and a thickness of 12 mm to form a Cu sputtering target. As a result of analyzing the contents of Ar and H in this sputtering target, the H content and the Ar content were both less than 1 wtppm, which is below the detection limit. Further, in the evaluation test of the discharge stability performed in the same manner as Example 1 regarding this sputtering target, the continuous duration of the plasma was 143 seconds, and is considerably shorter in comparison to the respective Examples.

Comparative Example 6

[0045] 1.0 wt % of high purity Mn having a purity of 4N or higher was added to high purity Cu having a purity of 6N and this was used as a raw material, and it was heated and melted to obtain a raw material molten metal. During the heating and melting of the raw material, H.sub.2 gas was continuously blown at a flow rate of 0.1 scfm (2.83 slm) and Ar gas was continuously blown at a flow rate of 4 scfm (113.2 slm) from a gas blowing nozzle having a circular blowing port shape, in which the diameter thereof is 5 mm, toward a surface of the raw material molten metal upon setting a shortest distance between a tip of the blowing port and the molten metal surface to be 500 mm. After the melting process, the molten metal was cooled to obtain a cast ingot. After the cast ingot was taken out, it was processed into a shape having a diameter of 440 mm and a thickness of 12 mm to form a Cu sputtering target. As a result of analyzing the contents of Ar and H in this sputtering target, the H content and the Ar content were both less than 1 wtppm, which is below the detection limit. Further, in the evaluation test of the discharge stability performed in the same manner as Example 1 regarding this sputtering target, the continuous duration of the plasma was only 75 seconds, and considerably shorter in comparison to the respective Examples.

TABLE-US-00001 TABLE 1 Distance between Blowing Blowing blowing port and amount amount H content in Ar content in Discharge molten metal of H of Ar material material duration Material Composition Shape of blowing port (mm) (scfm) (scfm) (wtppm) (wtppm) (sec) Example 1 Cu Circle (5 mm) 100 0.7 24 2 1.5 350 Example 2 Cu Quadrangular 120 0.4 14 1.2 1 320 (8 mm 3 mm) Example 3 Cu Oval 90 0 8 <1 1.2 314 (10 mm 4 mm) Example 4 Cu Triangle 110 0.5 0 1.2 <1 307 (10 mm 10 mm) Example 5 CuAl 0.1 wt % Al Circle 120 0.3 10 1.5 1 299 (7 mm) Example 6 CuAl 1.0 wt % Al Circle (10 mm) 130 0.2 8 1.4 1 304 Example 7 CuAl 5.0 wt % Al Oval 80 0.5 16 2.1 2 311 (15 mm 10 mm) Example 8 CuAl 3.0 wt % Triangle 110 0 10 <1 1.3 305 (15 mm 10 mm) Example 9 CuAl 0.5 wt % Quadrangular 130 0.4 0 1.3 <1 296 (15 mm 10 mm) Example 10 CuMn 0.1 wt % Mn Quadrangular (15 mm 90 0.3 10 1.2 1.4 334 10 mm) Example 11 CuMn 2.0 wt % Mn Triangle 50 0.5 17 1.8 1.5 305 (12 mm 8 mm) Example 12 CuMn 15 wt % Mn Oval 100 0.4 15 1.5 1 289 (20 mm 10 mm) Example 13 CuMn 8.0 wt % Mn Square 80 0 6 <1 1.4 300 (5 mm 5 mm) Example 14 CuMn 1.0 wt % Mn Circle (8 mm) 90 0.3 0 1.2 <1 280 Comparative Cu Circle (5 mm) 500 0 6 <1 <1 135 Example 1 Comparative Cu Circle (50 mm) 200 0.5 0 <1 <1 125 Example 2 Comparative CuAl 2.0 wt % Al Circle (50 mm) 200 0.3 10 <1 <1 87 Example 3 Comparative CuAl 0.5 wt % Al Circle (5 mm) 500 0 6 <1 <1 122 Example 4 Comparative CuMn 0.1 wt % Mn Circle (50 mm) 200 0.4 14 <1 <1 143 Example 5 Comparative CuMn 1.0 wt % Mn Circle (5 mm) 500 0.1 4 <1 <1 75 Example 6

INDUSTRIAL APPLICABILITY

[0046] According to the embodiment of the present invention, the discharge can be continuously maintained easily in comparison to conventional sputtering targets even under conditions such as low pressure and low gas flow rate where it is difficult to continuously maintain sputtering discharge. Consequently, the sputtering target of the embodiment of the present invention can be effectively used in the process of forming Cu wires of LSI and the like in which demands for low pressure in the sputtering process are increasing in recent years. Because the freedom in the design of the wire layer composition and process conditions will consequently increase, it could be said that the application potentiality and technical contribution of the embodiment of the present invention in the industrial field of semiconductor device production are extremely high.