DEVELOPED INTRINSIC TWO-WAY SHAPE MEMORY THIN FILM
20190085436 ยท 2019-03-21
Inventors
Cpc classification
F03G7/06
MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
F03G7/065
MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
C22F1/006
CHEMISTRY; METALLURGY
F03G7/0614
MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
F03G7/0616
MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
International classification
C22F1/00
CHEMISTRY; METALLURGY
C23C14/16
CHEMISTRY; METALLURGY
Abstract
NiTi thin films with composition gradient have the added feature of an intrinsic two-way shape memory effect. According to the invention, a method of fabrication of Ni-rich/(NiTiCu) Ti-rich bi-layer thin film is disclosed. The bi-layer thin film formed compositional gradients at the interface of the films through diffusion. The bi-layer presented a combined pseudo elastic behavior and shape memory effect with a reduced hysteresis. The combination of pseudo elastic with shape memory effect produces an intrinsic two-way shape memory effect (TWSME). This behavior achieved without needing complicated heat treatment and training process. Therefore, it is compatible with MEMS processing.
Claims
1- A method for development of an intrinsic two-way shape memory thin film, comprising the steps of: Depositing a bi-layer thin film by a DC magnetron sputtering system, using teo alloy targets on a substrate, at a predetermined temperature, and then crystallized at 500 C. for 1 h under vacuum (<10.sup.7 mbar).
2- The method of claim 1, wherein Said bi-layer thin film is (Ni-rich/Ti-rich(NiTiCu)).
3- The method of claim 2, wherein said predetermined temperature is room temperature, and wherein said substrate is Si (111) substrate.
4- The method of claim 3, wherein said tow alloy targets were prepared using vacuum arc re-melting (VAR).
5- The method of claim 4, wherein said thin film was depostited using the following parameters: base pressures<10.sup.7 mbar, P.sub.Ar310.sup.3 mbar, target substrate distance=50 mm, power=200 W; wherein a substrate holder was kept rotating during deposition in order to achieve a uniform distribution of composition.
6- The method of claim 5 wherein at first an Ni-rich layer was deposited onto said Si substrate with thickness of at least 1 m and then NiTiCu were deposited onto said Ni-rich layer.
7- The method of claim 6, wherein a gradient in said chemical composition and residual stresses in said bi-layer lead to change phase transformation temperatures and exhibited small thermal hysteresis; wherein said bi-layer comprises super-elasticity effect and partial permanent strain because of composite structure; also comprising an extent of an indenter penetration recovery on unloading, due to a bottom austenitic layer which enhances the recovery of an upper martensitic layer.
8- The method of claim 7, wherein said bi-layer comprises superelastisity and shape memory effect, simultaneously.
9- The method of claim 8, wherein the existence of said gradient in said chemical composition and residual stresses in said bi-layer lead to a two-way shape memory effect intrinsically without needing complicated thermo-mechanical process with a narrow hysteresis temperature.
10- The method of claim 9, wherein said crystallization was performed at high teparture deposition and/or post annealing; where said post annealing was performed at the lowest possible annealing temperature for minimum annealing duration in order to minimize said reaction between said thin film and said substrate.
Description
BRIEF DESCRIPTION OF DRAWINGS
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DETAILED DESCRIPTION
[0028] The present invention aims to design and prepare a bi-layer thin film with a gradient in chemical composition. Special attention has been paid to the shape memory behavior and super elasticity effect of the bi-layer with different chemical compositions and small thermal hysteresis. In addition, it has been shown the bi-layer NiTi film can be fabricated with an intrinsic two-way shape memory effect without complicated heat treatment and training process that is incompatible with MEMS processing.
[0029] The bi-layer thin films; Ni-rich/Ti-rich(NiTiCu) was deposited using DC magnetron sputtering using two alloy targets onto Si (111) substrates. The alloy targets were prepared using vacuum arc re-melting (VAR). Due to the different angular sputtering distributions for Ni and Ti, the film composition deviates from the composition of the target. A typical loss rate of 4-4.5 at % Ti between cast-melted target and sputter deposited film was reported. The films were deposited using the following parameters: base pressures<10.sup.7 mbar, P.sub.Ar310.sup.3 mbar, target substrate distance=50 mm, power=200 W. The substrate holder was kept rotating during deposition in order to achieve a uniform distribution of composition. For making the bi-layer, at the first the Ni-rich layer was deposited onto Si substrate with thickness about 1 m and then NiTiCu were deposited onto Ni-rich layer. The film thicknesses were determined using a Dektak surface profiller is about 2 m.
[0030] In order to crystallize the as-deposited amorphous film, thin films were annealed at 500 C. for 1 h under vacuum (<10.sup.7 mbar). Grazing incidence X-ray diffraction measurements of the as-deposited and annealed thin films were carried out at room temperature using a Bruker diffractometer of Cu-K.sub. radiation. The crystallization and transformation temperatures were measured using DSC (NETZSCH DSC 404C) on the thin films after removal from the substrates. Heating and cooling rates were maintained at 10 C./min. Also, a standard four-point electrical resistivity measurement characterized the transformation temperatures.
[0031] In general, the films deposited at room temperature were usually amorphous in nature. The amorphous NiTi thin films do not exhibit the shape memory effect, and then an annealing process is necessary to yield the shape memory effect and super elasticity behaviors. Therefore, high temperature deposition or post annealing was required to make them crystalline.
[0032] It was suggested that post annealing should be done at the lowest possible annealing temperature for the minimum annealing duration to minimize the reaction between film and substrate otherwise it could lead to dramatic changes in the film microstructure, mechanical properties and shape memory effects.
[0033] There are two peaks in the heating curve, which related to each layer in the bi-layer. The crystallization temperature peaks are around 463 C. and 487 C. Previous researches have shown a decrease in crystallization temperatures and activation energies with the addition of copper, Chang et al. Therefore, it is assumed that the crystallization temperature of the Cu content layer to be around 463 C. and NiTi Ni-rich layer to be about 487 C. These results show that crystallization curve shows good agreement with the crystallization temperature of conventional sputtered NiTi thin film, Lehnert et al. According to the DSC results, the bi-layer was annealed at 500 C. for 1 h under vacuum (<10.sup.7 mbar). Room temperature X-ray patterns of the bi-layer thin films before and after annealing are displayed in
[0034] The existence of the martensite peaks at room temperature indicates that the shape memory effect and phase transformation occur above room temperature, as confirmed by DSC and electrical resistivity measurements shown in
[0035] DSC curves of the bi-layer thin film (
[0036] The curves of electrical resistivity-temperature (
TABLE-US-00001 TABLE 1 Transformation temperature and hysteresis width of the bi-layers thin film corresponding to FIG. 5. T ( C.) T = A.sub.f Sample A.sub.f A.sub.s M.sub.s M.sub.f R.sub.s R.sub.f M.sub.s Bi-layer 25 14 26 16 36 32 1
[0037] Drastic reduction of thermal hysteresis in the bi-layer is likely due to the existence of chemical composition and stress gradients in the bi-layer. The micro structure of the bi-layer was studied using scanning transmission electron microscopy (STEM, Titan 80-300). The Cross section TEM sample was prepared by focused ion beam (Zeiss Auriga 60 Dual Beam FIB). The STEM images of a cross section of the bi-layer (
[0038] These lens-shaped Ni.sub.4Ti.sub.3 precipitates are reported in Ni-rich thin films. Stress can induce preferential growth of selective precipitate variant, as Ni.sub.4Ti.sub.3 precipitates in Ni-rich NiTi. The preferential growth of Ni.sub.4Ti.sub.3 was proposed by Nishida et al. and confirmed by Li and Chen under uniaxial stress condition. Precipitate variant whose habit plane is more parallel to the stress axis is formed if the sample is annealed under tensile stress and the precipitate whose habit plane is more perpendicular to the stress axis is formed if the sample is annealed under compression stress.
[0039] As
[0040] Film surface morphology was studied using tapping mode atomic force microscopy (AFM: Digital Instruments NanoScope III). AFM images of the surface morphology of the annealed bi-layer on a large scale scan (20 m20 m) after annealing is shown in
[0041] The annealed thin films were then subjected to mechanical analysis by means of nanoindentation using an Agilent G200-DCM Nanoindenter equipped with a Berkovich diamond indenter. The maximum indentation load was 10 mN. Both load and displacement were recorded during the entire loading and unloading cycle. The load-displacement experiments were repeated at five different locations on the surface of the films. The load-displacement curve of the bi-layer at maximum load 5 mN (
[0042] Furthermore, during the nanoindentation of the bi-layer film, the elastic recovery is more complex than in the single-layer thin film due to the influences of the interface between the layers and composition gradient across the film thickness. The indentation induced super elasticity effect can be characterized by the depth recovery ratio of the load-displacement curves by using the following equation:
Depth Recovery Ratio ()=(h.sub.maxh.sub.r)/h.sub.max (1)
where h.sub.max is the penetration depth at the maximum load and h.sub.r is the depth when the load returns to zero during unloading. Depth recovery ratios () for the bi-layer is about 0.40. In order to understand the twin-rearrangement and the pseudo-elastic transformation during indentation, it is necessary to develop a theoretical picture of the process occurring under the indenter tip.
[0043] The processes occurring during indentation in the martensitic and austenitic structures can be explained by Johnson's spherical cavity model. According to this model, the deformation of the solid under the indenter tip occurs by plastic deformation in the region nearest to the tip where stresses are greatest, followed by martensite twin-rearrangement in the case of a martensitic structure or stress-induced martensitic transformation (pseudo-elasticity) in the case of austenitic structure, and finally elastic deformation in the region far from the tip.
[0044] Although these regions are not sharply specified, but by using the modified spherical cavity model, the phase transformation-elastic boundary radius can be located such that:
where C is an phase transformation-elastic boundary, d is indentation depth, is the angle between the surface and indenter (24.65 for a Berkovich indenter), E is Young's modulus (obtained from nanoindentation results,
[0045] According to Eq. (2), the phase transformation-elastic boundary (C) for the bi-layer thin film is about 1.4 m. Hence, in the bi-layer, a proportion of the phase transformation zone is located in the bottom austenitic layer and can increase the recovery ratio due to its pseudo elastic effect.
[0046] For more investigation of mechanical behavior of the bi-layer, the nanoindentation measurements were performed at different loading and are shown in
[0047] Through the use of nanoindentation and atomic force microscopy (AFM) methods the shape memory effect is observed in the nanoscale regime. After the nanoindentation tests, the indents were scanned using an AFM and then the samples were removed and heated to above austenite finish temperature (A.sub.f) and then were allowed to cool. This process transformed the martensite to the austenite which in turn the shape memory effect (SME) occurs. The films were then returned to the AFM, and the indents imaged again. The change in the depth of the remnant indentations due to the shape memory effect was quantified using NanoScope Analysis software.
[0048] Cross section AFM scans of an indentation in the bi-layer thin film before and after heating are shown in
where D.sub.bh and D.sub.ah are indent depth before and after heating, respectively. The insets in
[0049] For studying the two-way shape memory effect of the bi-layer, the free standing film was heated to above 80 C. and then cooled to room temperature. The two-way shape memory effect can be clearly observed from the photos of free standing bi-layer thin film as shown in
[0050] This two-way shape memory effect is not generated by the usual special thermo-mechanical training procedures of NiTi thin films, and it is most likely due to the residual stress in the bi-layer thin film structure. Another possible reason is that the bi-layer thin films is not uniform across their thicknesses, but have a slight gradation in the thickness. Because of diffusion of the Cu and Ni in the bi-layer thin film after crystallization, the chemical gradient is more sensible, Mohri et al. Therefore, internal stresses and compositional gradient through the film thickness of the bi-layer lead to a high two-way shape memory recover. The two-way shape memory effect related to the residual stress is schematically shown in
[0051] As the TEM results shown (
[0052] Maximum force output utilizing the two-way effect is dependent on the magnitude of the residual stresses. In other word the force available during recovery to the low temperature phase supplied by the residual stresses, while in heating it is the force of the shape memory effect after overcoming the opposing residual stresses. This two-way shape memory effect is quite applicable, to develop thin film micro-actuators.