EUV ILLUMINATION DEVICE AND METHOD FOR OPERATING A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS DESIGNED FOR OPERATION IN THE EUV

Abstract

An EUV illumination device and related method for operating a microlithographic projection exposure apparatus designed for operation in the EUV. An EUV illumination device comprises a first reflective component, a second reflective component and an exchange apparatus by which the first reflective component and the second reflective component in the optical beam path are exchangeable for one another. A polarization degree, defined as a ratio between the reflectivities for s-polarized and p-polarized radiation, for the first reflective component is at least 1.5 times greater than for the second reflective component.

Claims

1. An EUV illumination device having an optical beam path, the EUV illumination device comprising: a first reflective component; a second reflective component; and an exchange apparatus configured to exchange the first reflective component and the second reflective component in the optical beam path for one another, wherein a polarization degree, defined as a ratio between the reflectivities for s-polarized and p-polarized radiation, of the first reflective component is at least 1.5 greater than for the second reflective component.

2. The EUV illumination device of claim 1, wherein each of the first and second reflective components comprises a mirror facet of a facet mirror.

3. The EUV illumination device of claim 1, wherein each of the first and second reflective components comprises a mirror facet of a pupil facet mirror.

4. The EUV illumination device of claim 1, wherein each of the first and second reflective components comprises a mirror facet of a field facet mirror.

5. The EUV illumination device of claim 1, wherein each of the first and second reflective components comprise a facet mirror.

6. The EUV illumination device of claim 1, wherein each of the first and second reflective components comprises a pupil facet mirror comprising a plurality of pupil facets.

7. The EUV illumination device of claim 1, wherein each of the first and second reflective components comprises a field facet mirror comprising a plurality of field facets.

8. The EUV illumination device of claim 1, wherein each of the first and second reflective components comprises a micromirror of a specular reflector.

9. The EUV illumination device of claim 1, wherein each of the first and the second reflective components comprises a collector mirror.

10. The EUV illumination device of claim 1, wherein a wavelength ?.sub.0 is a mean wavelength in a wavelength interval [(?.sub.0???.sub.0/2), (?.sub.0+??.sub.0/2)] of width ??.sub.0 such that the first reflection layer system satisfies the following conditions: $\left({?}_0-?{?}_0/2\right)?{?}_{1sl},\left({?}_0+?{?}_0/2\right)?{?}_{1sr}$ $\mathrm{and}$ $\left({?}_0-?{?}_0/2\right)?{?}_{1\mathrm{pl}}\mathrm{or}\left({?}_0+?{?}_0/2\right)?{?}_{1\mathrm{pr}},$ where, in reflection profiles (r.sub.1s(?), r.sub.1p(?)) of the first reflection layer system, ?.sub.1sl and ?.sub.1pl, denote the shortest wavelength and ?.sub.1sr and ?.sub.1pr denote a longest wavelength for which in each case s-polarized and p-polarized radiation, respectively, is reflected with a reflectivity of at least 50% of the maximum reflectivity.

11. The EUV illumination device of claim 1, wherein a wavelength ?.sub.0 is a mean wavelength in a wavelength interval [(?.sub.0???.sub.0/2), (?.sub.0+??.sub.0/2)] of width ??.sub.0 such that the second reflection layer system satisfies the following conditions: $\left({?}_0-?{?}_0/2\right)?{?}_{2sl},\left({?}_0+?{?}_0/2\right)?{?}_{2sr}$ $\mathrm{and}$ $\left({?}_0-?{?}_0/2\right)?{?}_{2pl},\left({?}_0+?{?}_0/2\right)?{?}_{2pr}$ where, in reflection profiles (r.sub.2s(?), r.sub.2p(?)) of the second reflection layer system, ?.sub.2sl and ?.sub.2pl denote the shortest wavelength and ?.sub.2sr and ?.sub.2pr denote the longest wavelength for which in each case s-polarized and p-polarized radiation, respectively, is reflected with a reflectivity of at least 50% of the maximum reflectivity.

12. The EUV illumination device of claim 1, wherein a wavelength ?.sub.0 is a mean wavelength in a wavelength interval [(?.sub.0???.sub.0/2), (?.sub.0+??.sub.0/2)] of width ??.sub.0 such that the first reflection layer system satisfies the following conditions: $\left({?}_0-?{?}_0/2\right)?{?}_{1sl},\left({?}_0+?{?}_0/2\right)?{?}_{1sr}$ $\mathrm{and}$ $\left({?}_0-?{?}_0/2\right)?{?}_{1\mathrm{pl}}\mathrm{or}\left({?}_0+?{?}_0/2\right)?{?}_{1\mathrm{pr}},$ and the second reflection layer system satisfies the following conditions: $\left({?}_0-?{?}_0/2\right)?{?}_{2sl},\left({?}_0+?{?}_0/2\right)?{?}_{2sr}$ $\mathrm{and}$ $\left({?}_0-?{?}_0/2\right)?{?}_{2pl},\left({?}_0+?{?}_0/2\right)?{?}_{2pr}$ wherein, in reflection profiles (r.sub.1s(?), r.sub.1p(?)) of the first reflection layer system and (r.sub.2s(?), r.sub.2p(?)) of the second reflection layer system, ?.sub.1sl, ?.sub.1pl, ?.sub.2sl and ?.sub.2pl denote respective shortest wavelengths and ?.sub.1sr, ?.sub.1pr, ?.sub.2sr and ?.sub.2pr denote respective longest wavelengths for which in each case s-polarized and p-polarized radiation, respectively, is reflected with a reflectivity of at least 50% of the maximum reflectivity.

13. The EUV illumination device of claim 1, wherein: for s-polarized radiation in a wavelength interval [(?);(+)], the EUV illumination device has a transmissivity of at least 50% of a maximum transmissivity of the EUV illumination device; and ??.sub.0 is between and .

14. The EUV illumination device of claim 13, wherein a wavelength ?.sub.0 is a mean wavelength in a wavelength interval [(?.sub.0???.sub.0/2), (?.sub.0+??.sub.0/2)] of width ??.sub.0 such that the first reflection layer system satisfies the following conditions: $\left({?}_0-?{?}_0/2\right)?{?}_{1sl},\left({?}_0+?{?}_0/2\right)?{?}_{1sr}$ $\mathrm{and}$ $\left({?}_0-?{?}_0/2\right)?{?}_{1\mathrm{pl}}\mathrm{or}\left({?}_0+?{?}_0/2\right)?{?}_{1\mathrm{pr}},$ where, in reflection profiles (r.sub.1s(?), r.sub.1p(?)) of the first reflection layer system, ?.sub.1sl and ?.sub.1pl denote the shortest wavelength and ?.sub.1sr and ?.sub.1pr denote a longest wavelength for which in each case s-polarized and p-polarized radiation, respectively, is reflected with a reflectivity of at least 50% of the maximum reflectivity.

15. The EUV illumination device of claim 13, wherein a wavelength ?.sub.0 is a mean wavelength in a wavelength interval [(?.sub.0???.sub.0/2), (?.sub.0+??.sub.0/2)] of width ??.sub.0 such that the second reflection layer system satisfies the following conditions: $\left({?}_0-?{?}_0/2\right)?{?}_{2sl},\left({?}_0+?{?}_0/2\right)?{?}_{2sr}$ $\mathrm{and}$ $\left({?}_0-?{?}_0/2\right)?{?}_{2pl},\left({?}_0+?{?}_0/2\right)?{?}_{2pr}$ where, in reflection profiles (r.sub.2s(?), r.sub.2p(?)) of the second reflection layer system, ?.sub.2sl and ?.sub.2pl denote the shortest wavelength and ?.sub.2sr and ?.sub.2pr denote the longest wavelength for which in each case s-polarized and p-polarized radiation, respectively, is reflected with a reflectivity of at least 50% of the maximum reflectivity.

16. The EUV illumination device of claim 13, wherein a wavelength ?.sub.0 is a mean wavelength in a wavelength interval [(?.sub.0???.sub.0/2), (?.sub.0+??.sub.0/2)] of width ??.sub.0 such that the first reflection layer system satisfies the following conditions: $\left({?}_0-?{?}_0/2\right)?{?}_{1sl},\left({?}_0+?{?}_0/2\right)?{?}_{1sr}$ $\mathrm{and}$ $\left({?}_0-?{?}_0/2\right)?{?}_{1\mathrm{pl}}\mathrm{or}\left({?}_0+?{?}_0/2\right)?{?}_{1\mathrm{pr}},$ and the second reflection layer system satisfies the following conditions: $\left({?}_0-?{?}_0/2\right)?{?}_{2sl},\left({?}_0+?{?}_0/2\right)?{?}_{2sr}$ $\mathrm{and}$ $\left({?}_0-?{?}_0/2\right)?{?}_{2pl},\left({?}_0+?{?}_0/2\right)?{?}_{2pr}$ wherein, in reflection profiles (r.sub.1s(?), r.sub.1p(?)) of the first reflection layer system and (r.sub.2s(?), r.sub.2p((?)) of the second reflection layer system, ?.sub.1sl, ?.sub.1pl, ?.sub.2sl and ?.sub.2pl denote respective shortest wavelengths and ?.sub.1sr, ?.sub.1pr, ?.sub.2sr and ?.sub.2pr denote respective longest wavelengths for which in each case s-polarized and p-polarized radiation, respectively, is reflected with a reflectivity of at least 50% of the maximum reflectivity.

17. The EUV illumination device of claim 13, wherein each of the first and second reflective components comprises a mirror facet of a facet mirror.

18. The EUV illumination device of claim 13, wherein each of the first and second reflective components comprise a facet mirror.

19. An apparatus, comprising: an EUV illumination device according to claim 1; and a projection lens, wherein the apparatus is a microlithographic projection exposure apparatus.

20. A method of operating an EUV microlithographic projection exposure apparatus comprising an illumination device and a projection lens, the method comprising: using the illumination device to illuminate an object plane of the projection lens; using the projection lens to image the object plane into an image plane of the projection lens; and switching between a polarized operating mode and an unpolarized operating mode by exchanging a first reflective component comprising a first reflection layer system located in an optical beam path of the illumination device for a second reflective component comprising a second reflection layer system, wherein a polarization degree, defined as a ratio between the reflectivities for s-polarized and p-polarized radiation, of the first reflective component is at least 1.5 greater than for the second reflective component.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0032] In the figures:

[0033] FIGS. 1A-1D show diagrams for elucidating different values of the reflectivity for s-polarization and p-polarization, which are obtainable by varying the layer parameters of a reflection layer system;

[0034] FIG. 2 shows a typical wavelength-dependent profile of the intensity corresponding to an exemplary transmission interval of an optical system;

[0035] FIGS. 3A-3B show the wavelength-dependent profile of the reflectivity of two different reflection layer systems in each case for s-polarization and p-polarization;

[0036] FIGS. 4A-4B show the respective wavelength-dependent profile of the reflectivity of two different reflection layer systems over a larger wavelength range;

[0037] FIG. 5 shows a diagram for explaining terminology used within the present application;

[0038] FIGS. 6A-6F show diagrams which show layer thicknesses of periodic layer systems for exemplary angles of incidence, wherein, for the entire range of r.sub.s, the layers with minimum and maximum r.sub.p are represented in each case;

[0039] FIGS. 7A-7H show diagrams in which regions in the r.sub.s-r.sub.p diagram obtainable for exemplary periodic or aperiodic layer stacks are represented as a function of the angle of incidence;

[0040] FIG. 8 shows a schematic and much simplified representation of the possible structure of an illumination device;

[0041] FIG. 9 shows a schematic illustration for elucidating an exemplary realization of the disclosure in a pupil facet mirror;

[0042] FIG. 10 shows a schematic illustration for elucidating a further possible realization of the disclosure in segments of a pupil facet mirror;

[0043] FIG. 11 shows a schematic illustration for elucidating a further possible realization in individual pupil facets of a pupil facet mirror;

[0044] FIGS. 12A-12B show schematic illustrations for explaining a further possible realization of the disclosure in a field facet mirror; and

[0045] FIG. 13 shows a schematic illustration of a fundamentally possible structure of a projection exposure apparatus designed for operation in the EUV.

DETAILED DESCRIPTION

[0046] What is common to the embodiments of the disclosure described below is the basic concept of providing two reflective optical components with differing spectral reflection profiles in a manner such that, for a specified wavelength interval, one of the two components is suitable for a polarized operating mode and the other of the two components is suitable for an unpolarized operating mode. In this case, the aforementioned wavelength interval can be in particular a transmission interval of the respective optical system (e.g. the illumination device of a microlithographic projection exposure apparatus) for which the reflective optical components according to the disclosure are intended and which is typically determined by the reflection profile of the remaining optical components present in the optical system (in particular, the downstream optical components in relation to the optical beam path).

[0047] Below, the principle underlying the aforementioned targeted adjustment of the respective reflection layer systems of the reflective optical components according to the disclosure for the polarized and unpolarized operation, respectively, is initially explained with reference to the diagrams in FIGS. 1-5.

[0048] In general, a given reflection layer system for a specified angle of incidence and a specified wavelength spectrum of the electromagnetic radiation comprises a specific value Is for the reflectivity of s-polarized radiation and a specific value r.sub.p for the reflectivity of p-polarized radiation. Consequently, according to FIG. 1A, the reflection layer system can be represented as a single point in the r.sub.s-r.sub.p diagram.

[0049] For given materials of the individual layers within the reflection layer system, the values for r.sub.s and r.sub.p are, in turn, dependent on the respective layer thicknesses, and so reflection layer systems with different value pairs (r.sub.s, r.sub.p) can be provided by varying these layer thicknesses. As a result, the provision of a multiplicity of corresponding reflection layer systems with different value pairs (r.sub.s, r.sub.p) in each case allows coverage of a specific region in the r.sub.s-r.sub.p diagram, for example in accordance with FIG. 1B. The specific design of this obtainable region in the r.sub.s-r.sub.p diagram can in turn be varied by varying the material combinations of the individual layers within the reflection layer system, for the purposes of which FIG. 1C shows an exemplary further possible shape of an obtainable region in the r.sub.s-r.sub.p diagram.

[0050] Accordingly, a corresponding union of the relevant obtainable regions arises according to FIG. 1D if, over the multiplicity of provided reflection layer systems, corresponding different material combinations of the individual layers are admitted or are present in this multiplicity.

[0051] Hence, in general, the suitable selection of a defined point in the r.sub.s-r.sub.p diagram, which in turn corresponds to a uniquely defined layer structure, can be made depending on the intended use or operating mode and the correspondingly produced reflective optical component can be exchanged where desired following the simulation of a multiplicity of reflection layer systems or reflective optical components formed thereby. Once again, depending on the use scenario, this selection can alternatively be made either to maximize the total reflectance provided by the reflection layer system or to provide a specific degree of polarization (corresponding to a ratio of the reflectivities respectively obtained for s-polarized radiation and p-polarized radiation).

[0052] What can be observed in this context is that the ultimately practice-oriented or preferred value pairs (r.sub.s, r.sub.p) are located on the respective edge of the obtainable regions, for example according to FIGS. 1B-1D. These circumstances can be traced back to the fact that a point in the r.sub.s-r.sub.p diagram situated within the region enclosed by the edge is therefore generally not preferred because it is possible in each case to readily find a point located directly on the edge of the region or a corresponding value pair (r.sub.s, r.sub.p) which either has a higher reflectivity overall for the same degree of polarization or which yields a higher degree of polarization for the same reflectivity.

[0053] The reflection layer systems used according to the disclosure can be both periodic and aperiodic layer systems. To provide different spectral reflection profiles both for s-polarized and for p-polarized radiation, the corresponding layer designs are now suitably varied, with the consequence that the wavelength-dependent profile of the respective reflectivities Is and r.sub.p in the relevant transmission interval ultimately has the respective suitable shape for the polarized or unpolarized operation.

[0054] FIG. 2 initially shows the typical shape of the spectral radiant flux of an EUV radiation source. The curve has been cut off outside of the wavelength range which in fact also reaches the image plane or wafer plane in the optical system or in the illumination device when the respective spectral reflection profiles of the remaining optical components are taken into account. Since the spectral transmission profile of the optical system or the illumination device typically only approaches zero asymptotically, the two cut-off wavelengths can only be specified approximately in each case. FIG. 5 shows a diagram of a spectral reflection profile r(?). Here, the maximum reflectivity r.sub.m occurs at the wavelength ?.sub.m. The shortest wavelength for which radiation is reflected with a reflectivity of at least 50% of the maximum reflectivity is denoted by ?.sub.1. The longest wavelength for which radiation is reflected with a reflectivity of at least 50% of the maximum reflectivity (corresponding to a reflectivity of r.sub.m/2) is denoted by ?.sub.f.

[0055] FIGS. 3A-3B show the respective wavelength-dependent curve of the reflectivity for s-polarization and p-polarization for two exemplary reflection layer systems (aperiodic MoSi layer systems in this example). In this case, the relevant multiple layer designs are chosen from a multiplicity of simulated layer designs such that the reflectivity r.sub.p obtained for p-polarized radiation is minimal for the reflection layer system according to FIG. 3A and maximal for the reflection layer system according to FIG. 3B. The qualitatively different curve of the wavelength-dependent reflectivity, readily identifiable from a comparison of FIG. 3A with FIG. 3B, becomes evident in terms of its practical relevance according to FIGS. 4A-4B during the respective consideration over a relatively large wavelength range.

[0056] As is evident from FIGS. 4A-4B, the peaks of the reflectivity respectively obtained for s-polarization and for p-polarization have different widths, with, according to expectations, the peak in the wavelength-dependent profile of the reflectivity having the greater width for s-polarization comparison with the peak for p-polarization. What is now achieved with the two aforementioned extreme layer designs with respect to the reflectivity r.sub.p applicable to p-polarization by taking advantage of this circumstance is that both peaks (i.e. for s-polarization and for p-polarization) are located within the transmission interval for the reflection layer system according to FIG. 4B, whereas the maximum reflectivity values for s-polarization but not for p-polarization are located within the transmission interval for the reflection layer system according to FIG. 4A (instead, for p-polarization, the falling slope of the corresponding peak of the reflectivity curve is situated within the transmission interval according to FIG. 4A).

[0057] As a consequence, the reflection layer system according to FIG. 4A has in comparison with that according to FIG. 4B a substantially stronger polarizing effect on the incident electromagnetic radiation. Expressed differently, the reflection layer system according to FIG. 4A is suitable for the operating mode with polarized radiation and the reflection layer system according to FIG. 4B is suitable for the operating mode with unpolarized radiation.

[0058] The realization of the above-described concept according to the disclosure in reflection layer systems in the form of aperiodic multiple layer systems now allows the influencing of the two parameters of width and position of the respective peak in the wavelength-dependent reflectivity profile independently of one another by changing the layer design. The corresponding values for s-polarization and p-polarization are correlated for a given layer design, and so width and position of the peaks for s-polarization and p-polarization cannot be chosen completely independently of one another. However, as already explained on the basis of FIGS. 4A-4B, this is not necessary either. By contrast, when realizing the disclosure with reflection layer systems in the form of periodic layer systems with an alternating periodic sequence of a given number of two different layer materials (bilayer), it is substantially only the position of the peak that can be chosen freely, while the width of the peak can only be influenced to a limited extent.

[0059] Tables 1-4 represent aperiodic layer designs in exemplary fashion, to be precise for systems made of molybdenum silicon (MoSi) or ruthenium silicon (RuSi). For fixed r.sub.s=0.7, the tables in each case specify the layer designs that have a maximum and minimum r.sub.p, respectively.

[0060] For exemplary angles of incidence, FIGS. 6A-6H depict the layer thicknesses of periodic layer systems. In this case, the layers with minimum and maximum r.sub.p are respectively depicted for the entire range of r.sub.s. FIGS. 6A and 6D each show the extremally achievable values of r.sub.p. FIGS. 6B and 6E each show the individual layer thicknesses: The thickness of silicon for maximum r.sub.p is represented by long dashes. The thickness of molybdenum or ruthenium for maximum r.sub.p is represented by short dashes.

[0061] The thickness of silicon for minimum r.sub.p is represented by a dash-dotted line. The thickness of molybdenum or ruthenium for minimum r.sub.p is represented by a line with a dash followed by two dots. FIGS. 6C and 6F show the respective period thickness, that is to say the sum of the two individual thicknesses (molybdenum and silicon or ruthenium and silicon).

[0062] FIGS. 7A-7H show the range in the r.sub.s-r.sub.p diagram achievable for MoSi or RuSi by periodic or aperiodic layer stacks, as a function of the angle of incidence. The two components that can be exchanged for one another need not correspond with respect to the material combination (MoSi or RuSi) and/or with respect to the structure (periodic or aperiodic sequence). Especially for angles that are sufficiently different from 0? and the Brewster angle of approximately 45?, the available selection range in the r.sub.s-r.sub.p diagram is surprisingly large.

TABLE-US-00001 TABLE 1 (RuSi; 60? angle of incidence; r.sub.s = 0.7; r.sub.p minimal The silicon layer of layer 1 is located directly on the substrate. The ruthenium layer of layer 50 forms the incidence surface for the EUV used radiation.) 1 d.sub.Si = 14.0000 nm d.sub.Ru = 2.3451 nm 2 d.sub.Si = 11.6620 nm d.sub.Ru = 0.0000 nm 3 d.sub.Si = 0.0000 nm d.sub.Ru = 14.0000 nm 4 d.sub.Si = 13.9930 nm d.sub.Ru = 14.0000 nm 5 d.sub.Si = 0.0000 nm d.sub.Ru = 14.0000 nm 6 d.sub.Si = 14.0000 nm d.sub.Ru = 0.0000 nm 7 d.sub.Si = 14.0000 nm d.sub.Ru = 14.0000 nm 8 d.sub.Si = 0.0000 nm d.sub.Ru = 14.0000 nm 9 d.sub.Si = 0.0000 nm d.sub.Ru = 14.0000 nm 10 d.sub.Si = 0.0000 nm d.sub.Ru = 0.0000 nm 11 d.sub.Si = 14.0000 nm d.sub.Ru = 14.0000 nm 12 d.sub.Si = 14.0000 nm d.sub.Ru = 14.0000 nm 13 d.sub.Si = 0.0000 nm d.sub.Ru = 14.0000 nm 14 d.sub.Si = 14.0000 nm d.sub.Ru = 0.0000 nm 15 d.sub.Si = 0.0000 nm d.sub.Ru = 7.1140 nm 16 d.sub.Si = 14.0000 nm d.sub.Ru = 14.0000 nm 17 d.sub.Si = 14.0000 nm d.sub.Ru = 0.0000 nm 18 d.sub.Si = 0.0000 nm d.sub.Ru = 6.0973 nm 19 d.sub.Si = 8.5758 nm d.sub.Ru = 13.5046 nm 20 d.sub.Si = 0.4454 nm d.sub.Ru = 11.4563 nm 21 d.sub.Si = 7.0244 nm d.sub.Ru = 12.3895 nm 22 d.sub.Si = 13.9996 nm d.sub.Ru = 10.4081 nm 23 d.sub.Si = 3.4224 nm d.sub.Ru = 12.4434 nm 24 d.sub.Si = 13.9985 nm d.sub.Ru = 13.9998 nm 25 d.sub.Si = 14.0000 nm d.sub.Ru = 13.9996 nm 26 d.sub.Si = 4.9534 nm d.sub.Ru = 13.9966 nm 27 d.sub.Si = 0.0000 nm d.sub.Ru = 13.9966 nm 28 d.sub.Si = 3.8489 nm d.sub.Ru = 12.8972 nm 29 d.sub.Si = 0.0000 nm d.sub.Ru = 13.9958 nm 30 d.sub.Si = 14.0000 nm d.sub.Ru = 14.0000 nm 31 d.sub.Si = 14.0000 nm d.sub.Ru = 0.0000 nm 32 d.sub.Si = 9.6313 nm d.sub.Ru = 1.7682 nm 33 d.sub.Si = 11.4665 nm d.sub.Ru = 5.4774 nm 34 d.sub.Si = 10.1439 nm d.sub.Ru = 6.3766 nm 35 d.sub.Si = 9.7245 nm d.sub.Ru = 6.6627 nm 36 d.sub.Si = 9.6146 nm d.sub.Ru = 6.6180 nm 37 d.sub.Si = 9.6285 nm d.sub.Ru = 6.4776 nm 38 d.sub.Si = 9.6654 nm d.sub.Ru = 6.2996 nm 39 d.sub.Si = 9.6951 nm d.sub.Ru = 6.1137 nm 40 d.sub.Si = 9.7058 nm d.sub.Ru = 5.9241 nm 41 d.sub.Si = 9.6964 nm d.sub.Ru = 5.7233 nm 42 d.sub.Si = 9.6632 nm d.sub.Ru = 5.5086 nm 43 d.sub.Si = 9.6117 nm d.sub.Ru = 5.2655 nm 44 d.sub.Si = 9.5779 nm d.sub.Ru = 4.8707 nm 45 d.sub.Si = 9.7328 nm d.sub.Ru = 4.2078 nm 46 d.sub.Si = 10.0269 nm d.sub.Ru = 3.6662 nm 47 d.sub.Si = 10.2061 nm d.sub.Ru = 3.4160 nm 48 d.sub.Si = 10.2024 nm d.sub.Ru = 3.4533 nm 49 d.sub.Si = 10.0420 nm d.sub.Ru = 3.9104 nm 50 d.sub.Si = 9.8148 nm d.sub.Ru = 4.2305 nm

TABLE-US-00002 TABLE 2 (RuSi; 60? angle of incidence; r.sub.s = 0.7; r.sub.p maximal The silicon layer of layer 1 is located directly on the substrate. The ruthenium layer of layer 50 forms the incidence surface for the EUV used radiation.) 1 d.sub.Si = 0.0000 nm d.sub.Ru = 6.8950 nm 2 d.sub.Si = 8.7943 nm d.sub.Ru = 0.0000 nm 3 d.sub.Si = 0.0000 nm d.sub.Ru = 0.0000 nm 4 d.sub.Si = 14.0000 nm d.sub.Ru = 11.1499 nm 5 d.sub.Si = 0.0000 nm d.sub.Ru = 14.0000 nm 6 d.sub.Si = 14.0000 nm d.sub.Ru = 0.0000 nm 7 d.sub.Si = 14.0000 nm d.sub.Ru = 14.0000 nm 8 d.sub.Si = 7.7458 nm d.sub.Ru = 12.7017 nm 9 d.sub.Si = 5.4784 nm d.sub.Ru = 9.9048 nm 10 d.sub.Si = 11.8243 nm d.sub.Ru = 9.2929 nm 11 d.sub.Si = 5.8627 nm d.sub.Ru = 10.5026 nm 12 d.sub.Si = 10.1953 nm d.sub.Ru = 10.0703 nm 13 d.sub.Si = 5.3878 nm d.sub.Ru = 10.7100 nm 14 d.sub.Si = 11.6359 nm d.sub.Ru = 9.1818 nm 15 d.sub.Si = 5.2900 nm d.sub.Ru = 0.0247 nm 16 d.sub.Si = 0.0904 nm d.sub.Ru = 0.0927 nm 17 d.sub.Si = 0.4027 nm d.sub.Ru = 11.7905 nm 18 d.sub.Si = 8.7352 nm d.sub.Ru = 0.0000 nm 19 d.sub.Si = 0.0104 nm d.sub.Ru = 10.9638 nm 20 d.sub.Si = 5.8251 nm d.sub.Ru = 10.8651 nm 21 d.sub.Si = 10.1334 nm d.sub.Ru = 10.2689 nm 22 d.sub.Si = 4.7854 nm d.sub.Ru = 10.9044 nm 23 d.sub.Si = 11.1279 nm d.sub.Ru = 0.0000 nm 24 d.sub.Si = 13.9900 nm d.sub.Ru = 0.0000 nm 25 d.sub.Si = 13.4481 nm d.sub.Ru = 0.0000 nm 26 d.sub.Si = 13.9864 nm d.sub.Ru = 6.4612 nm 27 d.sub.Si = 10.3630 nm d.sub.Ru = 0.7886 nm 28 d.sub.Si = 13.2990 nm d.sub.Ru = 0.0000 nm 29 d.sub.Si = 13.0715 nm d.sub.Ru = 0.0000 nm 30 d.sub.Si = 13.1670 nm d.sub.Ru = 7.2923 nm 31 d.sub.Si = 14.0000 nm d.sub.Ru = 0.0350 nm 32 d.sub.Si = 0.0455 nm d.sub.Ru = 0.0508 nm 33 d.sub.Si = 0.0000 nm d.sub.Ru = 0.0052 nm 34 d.sub.Si = 9.0992 nm d.sub.Ru = 5.3858 nm 35 d.sub.Si = 9.1359 nm d.sub.Ru = 9.1692 nm 36 d.sub.Si = 9.0522 nm d.sub.Ru = 6.6343 nm 37 d.sub.Si = 9.4914 nm d.sub.Ru = 6.8441 nm 38 d.sub.Si = 9.7028 nm d.sub.Ru = 5.9849 nm 39 d.sub.Si = 10.0724 nm d.sub.Ru = 5.4631 nm 40 d.sub.Si = 10.2388 nm d.sub.Ru = 5.2962 nm 41 d.sub.Si = 10.3055 nm d.sub.Ru = 5.2011 nm 42 d.sub.Si = 10.3321 nm d.sub.Ru = 5.1586 nm 43 d.sub.Si = 10.3539 nm d.sub.Ru = 5.1052 nm 44 d.sub.Si = 10.3842 nm d.sub.Ru = 5.0677 nm 45 d.sub.Si = 10.4049 nm d.sub.Ru = 5.0421 nm 46 d.sub.Si = 10.4114 nm d.sub.Ru = 5.0427 nm 47 d.sub.Si = 10.3725 nm d.sub.Ru = 5.1956 nm 48 d.sub.Si = 10.1710 nm d.sub.Ru = 5.6085 nm 49 d.sub.Si = 9.9845 nm d.sub.Ru = 5.8591 nm 50 d.sub.Si = 10.0288 nm d.sub.Ru = 5.1012 nm

TABLE-US-00003 TABLE 3 (MoSi; 25? angle of incidence; r.sub.s = 0.7; r.sub.p minimal The silicon layer of layer 1 is located directly on the substrate. The molybdenum layer of layer 50 forms the incidence surface for the EUV used radiation.) 1 d.sub.Si = 7.7236 nm d.sub.Mo = 4.1247 nm 2 d.sub.Si = 3.7727 nm d.sub.Mo = 3.9637 nm 3 d.sub.Si = 3.8103 nm d.sub.Mo = 3.9256 nm 4 d.sub.Si = 3.8385 nm d.sub.Mo = 3.8985 nm 5 d.sub.Si = 3.8613 nm d.sub.Mo = 3.8772 nm 6 d.sub.Si = 3.8799 nm d.sub.Mo = 3.8583 nm 7 d.sub.Si = 3.8964 nm d.sub.Mo = 3.8414 nm 8 d.sub.Si = 3.9109 nm d.sub.Mo = 3.8256 nm 9 d.sub.Si = 3.9239 nm d.sub.Mo = 3.8104 nm 10 d.sub.Si = 3.9358 nm d.sub.Mo = 3.7956 nm 11 d.sub.Si = 3.9469 nm d.sub.Mo = 3.7812 nm 12 d.sub.Si = 3.9572 nm d.sub.Mo = 3.7669 nm 13 d.sub.Si = 3.9667 nm d.sub.Mo = 3.7531 nm 14 d.sub.Si = 3.9749 nm d.sub.Mo = 3.7412 nm 15 d.sub.Si = 3.9796 nm d.sub.Mo = 3.7352 nm 16 d.sub.Si = 3.9756 nm d.sub.Mo = 3.7421 nm 17 d.sub.Si = 3.9559 nm d.sub.Mo = 3.7678 nm 18 d.sub.Si = 3.9223 nm d.sub.Mo = 3.7969 nm 19 d.sub.Si = 3.8955 nm d.sub.Mo = 3.8291 nm 20 d.sub.Si = 3.8322 nm d.sub.Mo = 3.9131 nm 21 d.sub.Si = 3.7738 nm d.sub.Mo = 3.9415 nm 22 d.sub.Si = 3.7078 nm d.sub.Mo = 4.0771 nm 23 d.sub.Si = 3.5857 nm d.sub.Mo = 4.0850 nm 24 d.sub.Si = 3.7453 nm d.sub.Mo = 3.7996 nm 25 d.sub.Si = 3.8214 nm d.sub.Mo = 4.0151 nm 26 d.sub.Si = 3.6689 nm d.sub.Mo = 3.8402 nm 27 d.sub.Si = 3.8079 nm d.sub.Mo = 4.0464 nm 28 d.sub.Si = 3.4973 nm d.sub.Mo = 4.2351 nm 29 d.sub.Si = 3.4044 nm d.sub.Mo = 4.3481 nm 30 d.sub.Si = 3.1417 nm d.sub.Mo = 4.7698 nm 31 d.sub.Si = 3.2269 nm d.sub.Mo = 4.2264 nm 32 d.sub.Si = 3.0257 nm d.sub.Mo = 5.1157 nm 33 d.sub.Si = 2.9847 nm d.sub.Mo = 4.3411 nm 34 d.sub.Si = 3.2408 nm d.sub.Mo = 4.7565 nm 35 d.sub.Si = 2.9068 nm d.sub.Mo = 4.6206 nm 36 d.sub.Si = 3.2913 nm d.sub.Mo = 4.2183 nm 37 d.sub.Si = 3.2794 nm d.sub.Mo = 4.9177 nm 38 d.sub.Si = 2.8443 nm d.sub.Mo = 4.1465 nm 39 d.sub.Si = 3.9148 nm d.sub.Mo = 4.0578 nm 40 d.sub.Si = 3.1493 nm d.sub.Mo = 4.7295 nm 41 d.sub.Si = 2.9040 nm d.sub.Mo = 4.8262 nm 42 d.sub.Si = 3.2651 nm d.sub.Mo = 4.1901 nm 43 d.sub.Si = 3.4998 nm d.sub.Mo = 4.1952 nm 44 d.sub.Si = 3.6395 nm d.sub.Mo = 3.8621 nm 45 d.sub.Si = 3.9863 nm d.sub.Mo = 3.5529 nm 46 d.sub.Si = 4.2105 nm d.sub.Mo = 3.3495 nm 47 d.sub.Si = 4.4049 nm d.sub.Mo = 3.1676 nm 48 d.sub.Si = 4.5380 nm d.sub.Mo = 3.0782 nm 49 d.sub.Si = 4.5974 nm d.sub.Mo = 3.0348 nm 50 d.sub.Si = 4.6360 nm d.sub.Mo = 2.7202 nm

TABLE-US-00004 TABLE 4 (MoSi; 25? angle of incidence; r.sub.s = 0.7; r.sub.p maximal The silicon layer of layer 1 is located directly on the substrate. The molybdenum layer of layer 50 forms the incidence surface for the EUV used radiation.) 1 d.sub.Si = 7.7236 nm d.sub.Mo = 4.1079 nm 2 d.sub.Si = 3.7634 nm d.sub.Mo = 4.0723 nm 3 d.sub.Si = 3.7981 nm d.sub.Mo = 4.0300 nm 4 d.sub.Si = 3.8289 nm d.sub.Mo = 3.9941 nm 5 d.sub.Si = 3.8583 nm d.sub.Mo = 3.9596 nm 6 d.sub.Si = 3.8868 nm d.sub.Mo = 3.9262 nm 7 d.sub.Si = 3.9146 nm d.sub.Mo = 3.8937 nm 8 d.sub.Si = 3.9418 nm d.sub.Mo = 3.8612 nm 9 d.sub.Si = 3.9695 nm d.sub.Mo = 3.8301 nm 10 d.sub.Si = 3.9949 nm d.sub.Mo = 3.8004 nm 11 d.sub.Si = 4.0206 nm d.sub.Mo = 3.7699 nm 12 d.sub.Si = 4.0475 nm d.sub.Mo = 3.7368 nm 13 d.sub.Si = 4.0796 nm d.sub.Mo = 3.6934 nm 14 d.sub.Si = 4.1263 nm d.sub.Mo = 3.6282 nm 15 d.sub.Si = 4.1977 nm d.sub.Mo = 3.5317 nm 16 d.sub.Si = 4.2988 nm d.sub.Mo = 3.4037 nm 17 d.sub.Si = 4.4256 nm d.sub.Mo = 3.2523 nm 18 d.sub.Si = 4.5682 nm d.sub.Mo = 3.0900 nm 19 d.sub.Si = 4.7158 nm d.sub.Mo = 2.9279 nm 20 d.sub.Si = 4.8592 nm d.sub.Mo = 2.7741 nm 21 d.sub.Si = 4.9929 nm d.sub.Mo = 2.6332 nm 22 d.sub.Si = 5.1140 nm d.sub.Mo = 2.5072 nm 23 d.sub.Si = 5.2216 nm d.sub.Mo = 2.3959 nm 24 d.sub.Si = 5.3162 nm d.sub.Mo = 2.2988 nm 25 d.sub.Si = 5.3987 nm d.sub.Mo = 2.2143 nm 26 d.sub.Si = 5.4705 nm d.sub.Mo = 2.1410 nm 27 d.sub.Si = 5.5327 nm d.sub.Mo = 2.0777 nm 28 d.sub.Si = 5.5866 nm d.sub.Mo = 2.0230 nm 29 d.sub.Si = 5.6333 nm d.sub.Mo = 1.9757 nm 30 d.sub.Si = 5.6738 nm d.sub.Mo = 1.9348 nm 31 d.sub.Si = 5.7090 nm d.sub.Mo = 1.8994 nm 32 d.sub.Si = 5.7396 nm d.sub.Mo = 1.8687 nm 33 d.sub.Si = 5.7662 nm d.sub.Mo = 1.8423 nm 34 d.sub.Si = 5.7893 nm d.sub.Mo = 1.8196 nm 35 d.sub.Si = 5.8094 nm d.sub.Mo = 1.8002 nm 36 d.sub.Si = 5.8266 nm d.sub.Mo = 1.7837 nm 37 d.sub.Si = 5.8414 nm d.sub.Mo = 1.7701 nm 38 d.sub.Si = 5.8540 nm d.sub.Mo = 1.7589 nm 39 d.sub.Si = 5.8646 nm d.sub.Mo = 1.7502 nm 40 d.sub.Si = 5.8737 nm d.sub.Mo = 1.7438 nm 41 d.sub.Si = 5.8815 nm d.sub.Mo = 1.7397 nm 42 d.sub.Si = 5.8885 nm d.sub.Mo = 1.7380 nm 43 d.sub.Si = 5.8946 nm d.sub.Mo = 1.7395 nm 44 d.sub.Si = 5.8983 nm d.sub.Mo = 1.7449 nm 45 d.sub.Si = 5.9017 nm d.sub.Mo = 1.7537 nm 46 d.sub.Si = 5.9027 nm d.sub.Mo = 1.7675 nm 47 d.sub.Si = 5.8995 nm d.sub.Mo = 1.7883 nm 48 d.sub.Si = 5.8868 nm d.sub.Mo = 1.8176 nm 49 d.sub.Si = 5.8528 nm d.sub.Mo = 1.9389 nm 50 d.sub.Si = 5.7606 nm d.sub.Mo = 2.5331 nm

[0063] Exchanging at least one reflective component located in the optical beam path for a component that corresponds with respect to its surface geometry but differs with respect to the reflection layer system present, for the purposes of changing the operating mode between polarized and unpolarized, can generally be realized for different components of the optical system or of the illumination device.

[0064] FIG. 8 initially shows a schematic and much simplified representation of a possible basic structure of an illumination device of a microlithographic projection exposure apparatus designed for operation in the EUV wavelength range. In this case, the EUV radiation produced by an EUV radiation source 802 (e.g. a plasma source) reaches a field facet mirror 810 with a multiplicity of independently adjustable field facets (e.g. for setting different illumination settings) via an intermediate focus 801 following the reflection at a collector mirror 803. From the field facet mirror 810, the EUV radiation is incident on a pupil facet mirror 820 and, from the latter, on a reticle 830 which is situated in the object plane of the projection lens (not depicted in FIG. 8) disposed downstream in the optical beam path.

[0065] The disclosure is not restricted to the structure of the illumination device as illustrated in FIG. 8. Thus, one or more additional optical elements, for example in the form of one or more deflection mirrors, can also be arranged in the beam path in further embodiments.

[0066] Possible implementations of the component exchange according to the disclosure are explained below with reference to the merely schematic illustrations of FIGS. 9-12.

[0067] With reference to FIG. 9, initially, the pupil facet mirror (denoted by 920 in FIG. 9) can be exchanged overall for another pupil facet mirror 920 (which according to the concept according to the disclosure differs from the pupil facet mirror 920 not in terms of its surface geometry but in terms of its spectral reflection profiles or reflection layer systems) for the purposes of implementing the component exchange according to the disclosure for the purpose of changing the operating mode between polarized and unpolarized. This implementation can be advantageous inasmuch as only a single component has to be exchanged.

[0068] In a further embodiment, elucidated in FIG. 10, it is also possible to exchange individual segments (denoted by 1021 to 1024 in FIG. 10) of a pupil facet mirror 1020 for other segments (denoted 1021 to 1024 in FIG. 10), with the respective segments in turn comprising a plurality of pupil facets. This embodiment is advantageous inasmuch as the number of elements to be realized as exchangeable is comparatively small. As indicated in FIG. 11, a single pupil facet (e.g. 1121 or 1122) of a pupil facet mirror 1120 can also be exchanged for another pupil facet 1121 or 1122 (which in conformity with the concept according to the disclosure is designed with the same surface geometry but different spectral reflection profiles or reflection layer systems) in a further embodiment.

[0069] To the extent that reference is made to a pupil facet mirror in the embodiments described above, there can be an analogous realization for the field facet mirror as well.

[0070] FIGS. 12A-12B show, purely in a schematic representation, a further implementation option for the component interchange according to the disclosure. In this case, up to three field facets 1250, 1250, 1250 can be arranged on an exchange apparatus 1260 designed as a roller, in an arrangement known per se from DE 10 2018 207 410 A1, with rotating the roller allowing a switch between the field facets 1250, 1250, 1250. By tilting the axis of rotation, the respective selected field facet 1250, 1250 or 1250 can be tilted so that a desired pupil facet of the pupil facet mirror is illuminated. In this case, according to the disclosure, the three field facets 1250, 1250, 1250 situated on a common roller are provided with different reflection layer systems.

[0071] In a further variant, the reflection layer systems can be attached to the collector mirror 803, reference having made to FIG. 8 again. Embodiments of a collector mirror for simplifying the highly accurate interchange thereof are known from DE 10 2013 200 368 A1.

[0072] FIG. 13 shows a schematic illustration of an exemplary projection exposure apparatus which is designed for operation in the EUV and in which the present disclosure can be realized. According to FIG. 13, an illumination device 1380 in a projection exposure apparatus 1375 designed for EUV comprises a field facet mirror 1381 (with facets 1382) and a pupil facet mirror 1383 (with facets 1384). The light from a light source unit 1385 comprising a plasma light source 1386 and a collector mirror 1387 is directed at the field facet mirror 1381. A first telescope mirror 1388 and a second telescope mirror 1389 are arranged in the light path downstream of the pupil facet mirror 1383. A deflection mirror 1390 is arranged downstream in the light path, the deflection mirror steering the radiation that is incident thereon to an object field 1391 in the object plane OP of a projection lens 1395 comprising six mirrors M1-M6. A reflective structure-bearing mask M, which is imaged into an image plane IP with the aid of the projection lens 1395 (comprising six mirrors M1-M6), is arranged at the location of the object field 1391.

[0073] Even though the disclosure has been described on the basis of specific embodiments, numerous variations and alternative embodiments will be apparent to a person skilled in the art, for example through combination and/or exchange of features of individual embodiments. Accordingly, it will be apparent to a person skilled in the art that such variations and alternative embodiments are also encompassed by the present disclosure, and the scope of the disclosure is restricted only within the scope of the appended patent claims and the equivalents thereof.