SEMICONDUCTOR RING LASER, PHOTONIC INTEGRATED CIRCUIT AND OPTO-ELECTRONIC SYSTEM COMPRISING THE SAME

Abstract

A semiconductor ring laser including a closed loop laser cavity and an optical gain device that is optically interconnected with the closed loop laser cavity. The optical gain device includes a first optical gain segment and a second optical gain segment. The first optical gain segment and the second optical gain segment being non-identical, optically interconnected with each other, and electrically isolated from each other. A PIC including a semiconductor ring laser and to an opto-electronic system that includes a PIC. The opto-electronic system can be one of a transmitter, a receiver, a transceiver, a coherent transmitter, a coherent receiver and a coherent transceiver. The opto-electronic system can for example, but not exclusively, be used for telecommunication applications, LIDAR or sensor applications.

Claims

1. A semiconductor ring laser comprising: a closed loop laser cavity; and an optical gain device that is optically interconnected with the closed loop laser cavity, the optical gain device comprising: a first optical gain segment; and a second optical gain segment; the first optical gain segment and the second optical gain segment being non-identical, optically interconnected with each other, and electrically isolated from each other.

2. The semiconductor ring laser according to claim 1, wherein the optical gain device is arranged in the closed loop laser cavity.

3. The semiconductor ring laser according to claim 1, wherein the closed loop laser cavity comprises a ridge waveguide structure, the first optical gain segment being arranged at a first section of the ridge waveguide structure and the second optical gain segment being arranged at a second section of the ridge waveguide structure, the first section of the ridge waveguide structure having a different configuration than the second section of the ridge waveguide structure.

4. The semiconductor ring laser according to claim 2, wherein the closed loop laser cavity comprises a ridge waveguide structure, the first optical gain segment being arranged at a first section of the ridge waveguide structure and the second optical gain segment being arranged at a second section of the ridge waveguide structure, the first section of the ridge waveguide structure having a different configuration than the second section of the ridge waveguide structure.

5. The semiconductor ring laser according to claim 3, wherein the first section of the ridge waveguide structure and the second section of the ridge waveguide structure have different geometries.

6. The semiconductor ring laser according to claim 4, wherein the first section of the ridge waveguide structure and the second section of the ridge waveguide structure have different geometries.

7. The semiconductor ring laser according to claim 1, wherein the first optical gain segment is provided with a first metal contact and the second optical gain segment is provided with a second metal contact, the first metal contact and the second metal contact being electrically isolated from each other, the first metal contact being electrically interconnectable with a first electrical biasing source and the second metal contact being electrically interconnectable with a second electrical biasing source, the first electrical biasing source and the second electrical biasing source being configured to provide electrical biasing conditions that are different from each other.

8. The semiconductor ring laser according to claim 1, wherein the first optical gain segment comprises a first semiconductor optical amplifier, SOA, and the second optical gain segment comprises a second SOA.

9. The semiconductor ring laser according to claim 1, comprising an optical filter structure that is optically interconnected with the closed loop laser cavity, the optical filter structure being configured to have a bandpass filter characteristic with a predefined 3 dB bandwidth and the closed loop laser cavity being configured to have a predefined mode spacing, wherein a ratio of the predefined 3 dB bandwidth to the predefined mode spacing has a value in a range from 0.5 to 10.0.

10. The semiconductor ring laser according to claim 9, wherein the optical filter structure is a tunable optical filter structure.

11. The semiconductor ring laser according to claim 1, comprising an optical delay line that is optically interconnected with the closed loop laser cavity.

12. The semiconductor ring laser according to claim 1, wherein the semiconductor ring laser is configured to allow hybrid integration or monolithic integration.

13. The semiconductor ring laser according to claim 1, wherein the semiconductor ring laser is an indium phosphide, InP-based ring laser.

14. A photonic integrated circuit, PIC, comprising a semiconductor ring laser according to claim 1.

15. The PIC according to claim 14, wherein the PIC is a monolithically integrated PIC.

16. The PIC according to claim 14, wherein the PIC is an InP-based PIC.

17. The PIC according to claim 15, wherein the PIC is an InP-based PIC.

18. An opto-electronic system comprising a PIC according to claim 14, wherein the opto-electronic system is one of a transmitter, a receiver, a transceiver, a coherent transmitter, a coherent receiver and a coherent transceiver.

Description

[0068] Reference will be made to the figures on the accompanying drawing sheets. The figures are schematic in nature and therefore not necessarily drawn to scale. Furthermore, equal reference numerals denote equal or similar parts. On the attached drawing sheets,

[0069] FIG. 1 shows a schematic top view of a first exemplary, non-limiting embodiment of a semiconductor ring laser according to the present invention;

[0070] FIG. 2 shows a schematic cross-section of a first optical gain segment that is arranged at a first section of a ridge waveguide structure of the first exemplary, non-limiting embodiment of the semiconductor ring laser shown in FIG. 1;

[0071] FIG. 3 shows a schematic cross-section of a second optical gain segment that is arranged at a second section of the ridge waveguide structure of the first exemplary, non-limiting embodiment of the semiconductor ring laser shown in FIG. 1;

[0072] FIG. 4 shows a schematic top view of a second exemplary, non-limiting embodiment of the semiconductor ring laser according to the present invention;

[0073] FIG. 5 shows a schematic top view of a third exemplary, non-limiting embodiment of the semiconductor ring laser according to the present invention;

[0074] FIG. 6 shows a schematic top view of a fourth exemplary, non-limiting embodiment of the semiconductor ring laser according to the present invention;

[0075] FIG. 7 shows a schematic top view of a fifth exemplary, non-limiting embodiment of the semiconductor ring laser according to the present invention;

[0076] FIG. 8 shows a schematic top view of a sixth exemplary, non-limiting embodiment of the semiconductor ring laser according to the present invention;

[0077] FIG. 9 shows a schematic view of a first exemplary, non-limiting embodiment of a PIC according to the present invention that comprises the semiconductor ring laser according to the invention; and

[0078] FIG. 10 shows a schematic view of a first exemplary, non-limiting embodiment of an opto-electronic system according to the present invention that comprises the PIC according to the invention.

DETAILED DESCRIPTION OF INVENTION

[0079] FIG. 1 shows a schematic top view of a first exemplary, non-limiting embodiment of a semiconductor ring laser 1 according to the present invention that comprises a closed loop laser cavity 2 and an optical gain device 3 that is arranged in the closed loop laser cavity 2. By arranging the optical gain device 3 in the closed loop laser cavity 2, a compact embodiment of the semiconductor ring laser 1 according to the invention can be provided. This is beneficial for reducing the footprint of the semiconductor ring laser 1 and therefore for reducing the costs of the semiconductor ring laser.

[0080] The optical gain device 3 comprises a first optical gain segment 4 and a second optical gain segment 5. The first optical gain segment 4 and the second optical gain segment 5 are non-identical, optically interconnected with each other, and electrically isolated from each other.

[0081] The optical gain device 3 enables an improved control of the balance between the optical powers of the optical waves that propagate in CW and CCW directions in the closed loop laser cavity 2. The CW and CCW direction are indicated in FIG. 1 with curved arrows. Consequently, an improved control of the directional operation of the semiconductor ring laser 1 can be achieved.

[0082] The first optical gain segment 4, which for example can be associated with the optical waves propagating in the CW direction, and the second optical gain segment 5, which for example can be associated with the optical waves propagating in the CCW direction, are non-identical. As a result thereof, the symmetry of the round-trip condition for the optical waves propagating in the CW and CCW directions can be broken.

[0083] Furthermore, due to the fact that the first optical gain segment 4 and the second optical gain segment 5 are electrically isolated from each other, they can be independently controlled.

[0084] As discussed above, due to the nonlinear optical gain saturation and/or compression of the non-identical and electrically independently controllable first optical gain segment 4 and the second optical gain segment 5, it is possible to provide different round-trip gains for the optical waves propagating in the CW and CCW directions. By controlling a difference between the different round-trip gains for the optical waves propagating in the CW and CCW directions, one of the afore-mentioned directions can be designated as the dominant direction of operation. Consequently, the semiconductor ring laser 1 according to the invention can have an improved directional operation.

[0085] By enabling an improved control of the directional operation of the semiconductor ring laser 1, the optical performance of the semiconductor ring laser 1 according to the invention can be improved. The person skilled in the art will appreciate that by enabling the semiconductor ring laser 1 to have a unidirectional operation, i.e. operation in the CW direction only or operation in the CCW direction only, the optical output power of the semiconductor ring laser 1 can at least be increased and ultimately be maximized.

[0086] The closed loop laser cavity 2 of the semiconductor ring laser 1 shown in FIG. 1 comprises a closed loop ridge waveguide structure 6 having a so-called racetrack shape.

[0087] The first optical gain segment 4 is arranged at a first section 7 of the ridge waveguide structure 6 and the second optical gain segment 5 is arranged at a second section 8 of the ridge waveguide structure 6.

[0088] FIG. 2 shows a schematic cross-section of the first optical gain segment 4 that is arranged at the first section 7 of the ridge waveguide structure 6, whereas FIG. 3 shows a schematic cross-section of the second optical gain segment 5 that is arranged at the second section 8 of the ridge waveguide structure 6 as is shown in FIG. 1.

[0089] Although FIGS. 2 and 3 are schematic in nature only, the dimensions in FIGS. 2 and 3 are drawn on a same scale. Therefore, the dimensions of the features shown in FIGS. 2 and 3 are comparable.

[0090] In accordance with the first exemplary, non-limiting embodiment of the first section 7 of the ridge waveguide structure 6 shown in FIG. 2, the first section 7 comprises a semiconductor-based top cladding layer 20, a semiconductor-based bottom cladding layer 21, and a semiconductor-based optical core layer 22 that is arranged between and in contact with the semiconductor-based top cladding layer 20 and the semiconductor-based bottom cladding layer 21. The semiconductor-based optical core layer 22 is provided with two quantum wells 23.

[0091] In accordance with the first exemplary, non-limiting embodiment of the second section 8 of the ridge waveguide structure 6 shown in FIG. 3, the second section 8 comprises a semiconductor-based top cladding layer 20, a semiconductor-based bottom cladding layer 21, and a semiconductor-based optical core layer 22 that is arranged between and in contact with the semiconductor-based top cladding layer 20 and the semiconductor-based bottom cladding layer 21. The semiconductor-based optical core layer 22 is provided with more than two quantum wells 23, in this example with four quantum wells.

[0092] From a comparison of FIGS. 2 and 3, it can be observed that the first section 7 of the ridge waveguide structure 6 has a different configuration than the second section 8 of the ridge waveguide structure 6 at least in terms of the number of quantum wells of the semiconductor-based optical core layers 22 in the first section 7 and the second section 8, respectively.

[0093] It is noted that in accordance with other exemplary, non-limiting embodiments of the first section 7 and the second section 8 of the ridge waveguide structure 6 that are not shown, it is possible to provide the first section 7 and of the second section 8 with different configurations in terms of, for example, the transparency carrier densities of the first and second sections and/or the compositions of the semiconductor materials in the first and second sections.

[0094] The person skilled in the art will appreciate that InP-based semiconductor materials are the semiconductor materials of choice for fabricating a semiconductor ring laser that can be applied in optical telecommunication applications. In addition, the person skilled in the art will appreciate that InP-based ring lasers can advantageously be applied in LIDAR or sensor applications.

[0095] At least one of the afore-mentioned differences in the configurations of the first section 7 and the second section 8 of the ridge waveguide structure 6 can provide the first optical gain segment 4 and the second optical gain segment 5 of the optical gain device 3 with different optical gain characteristics. As discussed above, the different optical gain characteristics of the first and second optical gain segments allow an improved control of the balance between the optical powers of the counter-propagating optical waves in the closed loop laser cavity 2 and therefore an improved control of the directional operation of the semiconductor ring laser 1. As a result, the semiconductor ring laser 1 according to the invention has an improved optical performance.

[0096] Furthermore, from a comparison of FIGS. 2 and 3 it can also be observed that the first exemplary, non-limiting embodiment of the first section 7 and the first exemplary, non-limiting embodiment of the second section 8 of the ridge waveguide structure 6 have different geometries. Although the first section 7 has a first width W1 that is the same as a second width W2 of the second section 8, the person skilled in the art will appreciate that in accordance with other exemplary, non-limiting embodiments, the first section 7 and the second section 8 can have different widths. This results in different optical confinement of the guided optical radiation in the first section 7 and the second section 8 of the ridge waveguide structure 6.

[0097] In accordance with the exemplary, non-limiting first exemplary embodiments of the first section 7 and the second section 8 as shown in FIGS. 2 and 3 respectively, the first section 7 of the ridge waveguide structure 6 is fabricated using an etch depth D1 that is larger than the etch depth D2 that is used for fabricating the second section 8 of the ridge waveguide structure 6. In the first section 7 of the ridge waveguide structure 6, the first etch depth D1 has resulted in the partial removal of the semiconductor-based top cladding layer 20, the semiconductor-based optical core layer 22 and the semiconductor-based bottom cladding layer 21. In the second section 8 of the ridge waveguide structure 6, the second etch depth D2 has resulted in the partial removal of only the semiconductor-based top cladding layer 20. The person skilled in the art will appreciate that the degree of optical confinement that is provided by the first section 7 of the ridge waveguide structure 6 is higher than the degree of optical confinement that is provided by the second section 8 of the ridge waveguide structure 6.

[0098] From 1 it can be observed that the first section 7 has a first length L1 that is different than a second length L2 of the second section 8. The person skilled in the art will appreciate that as a result of the different geometries of the first section 7 and the second section 8 of the ridge waveguide structure 6 as discussed above, the first optical gain segment 4 and the second optical gain segment 5 are non-identical. Furthermore, as a result of the fact that the first optical gain segment 4 and the second optical gain segment 5 are non-identical, the symmetry of the closed loop laser cavity 2 for the optical waves propagating in the CW and CCW directions is broken. In addition, the first optical gain segment 4 and the second optical gain segment 5 can have different gain characteristics as a result of the different geometries of the first section 7 and the second section 8 of the ridge waveguide structure 6. As discussed above, in this way it is possible to achieve an improved control of the balance between the optical powers of the counter-propagating optical waves in the closed loop laser cavity 2 and therefore an improved control of the directional operation of the semiconductor ring laser 1.

[0099] FIG. 1 shows that the first optical gain segment 4 is provided with a first metal contact 9 and that the second optical gain segment 5 is provided with a second metal contact 10. The first metal contact 9 and the second metal contact 10 are electrically isolated from each other. The first metal contact 9 is electrically interconnected with a first electrical biasing source 11 and the second metal contact 10 is electrically interconnected with a second electrical biasing source 12.

[0100] The first electrical biasing source 11 and the second electrical biasing source 12 are configured to provide electrical biasing conditions that are different from each other. The person skilled in the art will appreciate that in this way it is also possible to provide the first optical gain segment 4 and the second optical gain segment 5 of the optical gain device 3 with different gain characteristics in order to achieve an improved control of the balance between the optical powers of the counter-propagating optical waves in the closed loop laser cavity 2 and therefore an improved control of the directional operation of the semiconductor ring laser 1.

[0101] The different electrical biasing conditions can for example be different electrical currents that are injected via the first metal contact 9 and via the second metal contact 10 in order for controlling the balance between the optical powers of the counter-propagating optical waves in the closed loop laser cavity 2. In this way, unidirectional operation of the semiconductor ring laser 1 can be achieved and as a result thereof, the optical output power of the semiconductor ring laser 1 can at least be increased and ultimately be maximized.

[0102] An advantage of applying different electrical biasing conditions to the first metal contact 9 and the second metal contact 10 is that depending on the actual applied electrical biasing conditions, it is possible to select and change the direction of operation.

[0103] FIG. 4 shows a schematic top view of a second exemplary, non-limiting embodiment of the semiconductor ring laser 1 according to the present invention. The optical gain device 3 is a single structure that is divided into a first optical gain segment 4 and a second optical gain segment 5 that are non-identical, optically interconnected with each other, and electrically isolated from each other by way of the configurations and arrangements of the first metal contact 9 and the second metal contact 10 that are used for individually driving the first optical gain segment 4 and the second optical gain segment 5.

[0104] FIG. 5 shows a schematic top view of a third exemplary, non-limiting embodiment of the semiconductor ring laser 1 according to the present invention, wherein the optical gain device 3 comprises three otherwise identical optical gain units 18a, 18b, 18c that are electrically grouped together using two electrical switches 19a, 19b to obtain the non-identical first optical gain segment 4 that comprises the first optical gain unit 18a of the three identical optical gain units and the second optical gain segment 5 that comprises the second optical gain unit 18b and third optical gain unit 18c of the three identical optical gain units.

[0105] The first optical gain segment 4 and the second optical gain segment 5 are optically interconnected with each other and electrically isolated from each other. The first optical gain unit 18a of the first optical gain segment 4 is electrically connected to a first electrical biasing source 11 that is configured to inject electrical current into first optical gain unit 18a. The second optical gain unit 18b and the third optical gain unit 18c of the second optical gain segment 5 are electrically connected to a second electrical biasing source 12 that is configured to inject electrical current into the second optical gain unit 18b and the third optical gain unit 18c. It is noted that by effectively pumping the second optical gain unit 18b and the third optical gain unit 18c in parallel, the second optical gain segment 5 is longer than the first optical gain segment 4. As a result of the larger round-trip gain provided by the second optical gain unit 5, the CW direction will be the dominant direction of operation and the CCW direction will be suppressed.

[0106] FIG. 6 shows a schematic top view of a fourth exemplary, non-limiting embodiment of the semiconductor ring laser 1 according to the present invention, wherein the optical gain device 3 also comprises three otherwise identical optical gain units 18a, 18b, 18c that are electrically grouped together using two electrical switches 19a, 19b to obtain the non-identical first optical gain segment 4 that comprises the first optical gain unit 18a and the second optical gain unit 18b of the three identical optical gain units and the second optical gain segment 5 that comprises the third optical gain unit 18c of the three identical optical gain units.

[0107] The first optical gain segment 4 and the second optical gain segment 5 are optically interconnected with each other and electrically isolated from each other. The first optical gain unit 18a and the second optical gain unit 18b of the first optical gain segment 4 are electrically connected to the first electrical biasing source 11 that is configured to inject electrical current into the first optical gain unit 18a and the second optical gain unit 18b. The third optical gain unit 18c of the second optical gain segment 5 is electrically connected to the second electrical biasing source 12 that is configured to inject electrical current into the third optical gain unit 18c. It is noted that by effectively pumping the first optical gain unit 18a and the second optical gain unit 18b in parallel, the first optical gain segment 4 is longer than the second optical gain segment 5. As a result of the larger round-trip gain provided by the first optical gain unit 4, the CCW direction will be the dominant direction of operation and the CW direction will be suppressed.

[0108] It is noted that in accordance with other exemplary, non-limiting embodiments (not shown) of the semiconductor ring laser according to the invention, any suitable combination of the above-mentioned embodiments can be applied for achieving an improved control of the directional operation of the semiconductor ring laser.

[0109] FIG. 7 shows a schematic top view of a fifth exemplary, non-limiting embodiment of the semiconductor ring laser 1 according to the present invention, wherein an optical filter structure 16 is optically interconnected with the closed loop laser cavity 2. The optical filter structure 16 has a bandpass filter characteristic with a predefined 3 dB bandwidth and the closed loop laser cavity 2 has a predefined mode spacing, wherein a ratio of the predefined 3 dB bandwidth to the predefined mode spacing has a value in a range from 0.5 to 10.0.

[0110] It is noted that a bandpass filter characteristic for which the ratio of the predefined 3 dB bandwidth to the predefined mode spacing of the closed loop laser cavity 2 has a value in the above-mentioned range, is construed to be a narrow-width optical filter.

[0111] The optical filter structure 16 can be a filter structure of any suitable type, for example a Mach-Zehnder filter, or of any suitable construction, for example a cascade of filter structures.

[0112] Furthermore, the person skilled in the art will appreciate that the actual value of the above-mentioned ratio of the predefined 3 dB bandwidth to the predefined mode spacing can depend on the shape of the filter characteristic. For example, for a filter characteristic having a Gaussian shape or a raised-cosine shape the above-mentioned ratio can be 3.0, whereas for a filter characteristic having a block-shape the ratio can be 1.0.

[0113] It is noted that by optically interconnecting the optical filter structure 16 and the closed loop laser cavity 2, it is possible to provide a single-mode semiconductor ring laser 1. In this case, the optical filter 16 is designed such that the lasing spectrum contains a single, clean and stable wavelength or frequency that is required for modern applications, such as optical telecommunication systems. Furthermore, by concentrating the optical power in the designed direction, i.e. CW or CCW, as mentioned above, the optical output power of the semiconductor ring laser 1 can at least be increased and ultimately be maximized.

[0114] The person skilled in the art will appreciate that the embodiment of the single-mode semiconductor ring laser 1 shown in FIG. 7 is compact as a result of arranging the optical filter structure 16 in the closed loop laser cavity 2. This is beneficial for reducing the footprint of the semiconductor ring laser and therefore for reducing the costs of the semiconductor ring laser.

[0115] By adding a tunable filter structure 16 in the closed loop laser cavity 2 that is electrically interconnected with a third electrical biasing source 13, it is possible to provide a single-mode, wavelength- or frequency-tunable semiconductor ring laser 1. The third electrical biasing source 13 is configured to enable tuning of the optical filter structure 16, thereby selecting the lasing wavelength or lasing frequency of the semiconductor ring laser 1, while the risk of disturbing the directional operation of the semiconductor ring laser 1 can at least be reduced as a result of reducing the directional optical power instabilities that can be caused by exchange of optical power between the optical waves that propagate in the CW and CCW directions.

[0116] In the exemplary, non-limiting embodiment of the semiconductor ring laser 1 shown in FIG. 7, the first optical gain segment 4 of the optical gain device 3 comprises a first SOA 14 and the second optical gain segment 5 of the optical gain device 3 comprises a second SOA 15. As the second SOA 15 is larger than the first SOA 14, the round-trip gain provided by the second optical gain segment 5 is larger than the round-trip gain provided by the first optical gain segment 4. In this case, the CCW direction will be the dominant direction of operation and the CW direction will be suppressed.

[0117] It is noted that in accordance with other exemplary, non-limiting embodiments (not shown) of the semiconductor ring laser, the first optical gain segment and the second optical gain segment of the optical gain device can comprise multiple SOAs, identical and/or non-identical, as long as the first optical gain segment and the second optical gain segment are non-identical.

[0118] FIG. 8 shows a schematic top view of a sixth exemplary, non-limiting embodiment of the semiconductor ring laser 1, wherein an optical delay line 17 is optically interconnected with the closed loop laser cavity 2. In this way, it is possible to provide a single-frequency semiconductor ring laser 1 having an extremely narrow linewidth. By arranging the optical delay line 17 in the closed loop laser cavity 2, the embodiment of the single-frequency semiconductor ring laser 1 person is compact. This is beneficial for reducing the footprint of the semiconductor ring laser and therefore for reducing the costs of the semiconductor ring laser.

[0119] FIG. 9 shows a schematic view of a first exemplary, non-limiting embodiment of the PIC 100 according to the present invention that comprises the semiconductor ring laser 1 according to the invention. The semiconductor ring laser 1 can be construed to be monolithically integrated with the other opto-electronic devices (not shown) of the PIC 100.

[0120] In accordance with an exemplary, non-limiting embodiment of the PIC that is not shown, the semiconductor ring laser can be integrated in a hybrid way with the other opto-electronic devices of the PIC. An advantage of enabling hybrid integration of the semiconductor ring laser according to the invention is that the semiconductor ring laser can also be used in the domain of silicon photonics. Another advantage of enabling hybrid integration of the semiconductor ring laser according to the invention is that the semiconductor ring laser can be exchanged. Exchange of the semiconductor ring laser can for example be required in case of malfunction or after breakdown of the laser.

[0121] An advantage of monolithically integrating the semiconductor ring laser with other opto-electronic devices (not shown) on the same substrate as schematically illustrated in FIG. 9, is that the monolithic integration of the semiconductor ring laser 1 and the other opto-electronic components can be less cumbersome and possibly requires less die area than the hybrid integration thereof. Consequently, the costs associated with monolithic integration of the active and the passive opto-electronic devices can be less than the costs associated with the hybrid integration thereof. In addition, monolithic integration can allow the PIC 100 to have a smaller footprint. This is beneficial for reducing the costs of the PIC.

[0122] The PIC 100 can be an InP-based PIC. The person skilled in the art will appreciate that the most versatile technology platform for PICs, especially for the above-mentioned application areas, uses wafers comprising InP-based semiconductor materials. InP-based technology enables monolithic integration of both active components such as for example light-generating and/or light-absorbing optical devices, and passive components such as for example light-guiding and/or light-switching optical devices, in one PIC on a single die.

[0123] Based on the above, the person skilled in the art will appreciate that the PIC 100 according to the invention can benefit from the advantages provided by the semiconductor ring laser 1 according to the present invention.

[0124] FIG. 10 shows a schematic view of a first exemplary, non-limiting embodiment of an opto-electronic system 200 according to the present invention that comprises a PIC 100 according to the invention. The opto-electronic system 200 can be used for example but not exclusively for telecommunication applications, LIDAR or sensor applications. The opto-electronic system 200 can for example be one of a transmitter, a receiver, a transceiver, a coherent transmitter, a coherent receiver and a coherent transceiver. Based on the above, the person skilled in the art will appreciate that the opto-electronic system 200 according to the present invention can benefit from the advantages provided by the PIC 100 according to the present invention.

[0125] The present invention can be summarized as relating to a semiconductor ring laser 1 comprising a closed loop laser cavity 2 and an optical gain device 3 that is optically interconnected with the closed loop laser cavity 2. The optical gain device 3 comprises a first optical gain segment 4 and a second optical gain segment 5. The first optical gain segment 4 and the second optical gain segment 5 being non-identical, optically interconnected with each other, and electrically isolated from each other.

[0126] The invention also relates to a PIC 100 comprising a semiconductor ring laser 1 according to the invention and to an opto-electronic system 200 that comprises such a PIC 100. The opto-electronic system 200 can be one of a transmitter, a receiver, a transceiver, a coherent transmitter, a coherent receiver and a coherent transceiver. The opto-electronic system 200 can for example, but not exclusively, be used for telecommunication applications, LIDAR or sensor applications.

[0127] It will be clear to a person skilled in the art that the scope of the present invention is not limited to the examples discussed in the foregoing but that several amendments and modifications thereof are possible without deviating from the scope of the present invention as defined by the attached claims. In particular, combinations of specific features of various aspects of the invention may be made. An aspect of the invention may be further advantageously enhanced by adding a feature that was described in relation to another aspect of the invention. While the present invention has been illustrated and described in detail in the figures and the description, such illustration and description are to be considered illustrative or exemplary only, and not restrictive.

[0128] The present invention is not limited to the disclosed embodiments. Variations to the disclosed embodiments can be understood and effected by a person skilled in the art in practicing the claimed invention, from a study of the figures, the description and the attached claims. In the claims, the word “comprising” does not exclude other steps or elements, and the indefinite article “a” or “an” does not exclude a plurality. The mere fact that certain measures are recited in mutually different dependent claims does not indicate that a combination of these measures cannot be used to advantage. Any reference numerals in the claims should not be construed as limiting the scope of the present invention.

REFERENCE NUMERALS

[0129] 1 semiconductor ring laser [0130] 2 closed loop laser cavity [0131] 3 optical gain device [0132] 4 first optical gain segment [0133] 5 second optical gain segment [0134] 6 ridge waveguide structure [0135] 7 first section of the ridge waveguide structure [0136] 8 second section of the ridge waveguide structure [0137] 9 first metal contact [0138] 10 second metal contact [0139] 11 first electrical biasing source [0140] 12 second electrical biasing source [0141] 13 third electrical biasing source [0142] 14 first semiconductor optical amplifier (SOA) [0143] 15 second SOA [0144] 16 optical filter structure [0145] 17 optical delay line [0146] 18a, 18b, 18c identical optical gain units [0147] 19a, 19b electrical switches [0148] 20 semiconductor-based top cladding layer [0149] 21 semiconductor-based bottom cladding layer [0150] 22 semiconductor-based optical core layer [0151] 23 quantum well [0152] 100 photonic integrated circuit (PIC) [0153] 200 opto-electronic system [0154] D1, D2 etch depths of respectively the first and the second sections of the ridge waveguide structure [0155] L1, L2 lengths of respectively the first and the second sections of the ridge waveguide structure [0156] W1, W2 widths of respectively the first and the second sections of the ridge waveguide structure