Organic electroluminescent display device and method for producing same

Abstract

According to an embodiment of the invention, the organic EL device (100) comprises: an element substrate (20) having a substrate (1) and a plurality of organic EL elements (3) supported by the substrate; a thin film encapsulation structure (10) formed above the plurality of organic EL elements and having at least one compound layered body (10S) constituted by a first inorganic barrier layer (12), an organic barrier layer (14) in contact with the upper surface of the first inorganic barrier layer and having a plurality of solid sections spread out discretely, and a second inorganic barrier layer (16) in contact with the upper surface of the first inorganic barrier layer and the upper surfaces of the plurality of solid sections of the organic barrier layer; an organic planarization layer (42) provided above the thin film encapsulation structure and formed from a photosensitive resin; and a touch sensor layer (50) disposed above the organic planarization layer.

Claims

1. An organic electroluminescent device, comprising: an element substrate including a substrate and a plurality of organic electroluminescent elements supported by the substrate; a thin film encapsulation structure formed on the plurality of organic electroluminescent elements, the thin film encapsulation structure including at least one composite stack body that includes a first inorganic barrier layer, an organic barrier layer in contact with a top surface of the first inorganic barrier layer, and a second inorganic barrier layer in contact with the top surface of the first inorganic barrier layer and a top surface of the organic barrier layer; an organic flattening layer provided on the thin film encapsulation structure; a touch sensor layer located on the organic flattening layer; and a driving circuit supported by the substrate, a plurality of terminals located in a peripheral region, and a plurality of lead wires connecting the driving circuit and the plurality of terminals to each other, wherein the thin film encapsulation structure is selectively formed at least on an active region in which the plurality of organic electroluminescent elements are located and on portions, of the plurality of lead wires, that is closer to the driving circuit, and is in contact with at least portions of the plurality of lead wires, each of the plurality of lead wires has at least a tapering portion that has a side surface having a tapering angle smaller than 90 degrees in a cross-section of each of the lead wires that is taken along a plane parallel to a line width direction thereof, the thin film encapsulation structure includes an inorganic barrier layer joint portion where no organic barrier layer is present and the first inorganic barrier layer and the second inorganic barrier layer are in direct contact with each other, and the inorganic barrier layer joint portion is formed on a region including the tapering portion of each of the plurality of lead wires and completely encloses the active region.

2. The organic electroluminescent device of claim 1, wherein the organic flattening layer is formed of a photosensitive resin of negative-type.

3. The organic electroluminescent device of claim 2, wherein the photosensitive resin contains a silicone resin.

4. The organic electroluminescent device of claim 2, wherein the photosensitive resin has an elastic modulus that does not exceed 400 MPa at 0° C.

5. The organic electroluminescent device of claim 1, wherein the organic flattening layer has a thickness that does not exceed 15 μm.

6. The organic electroluminescent device of claim 1, wherein the organic flattening layer has a transmittance of 80% or higher to light having a wavelength of 350 nm.

7. The organic electroluminescent device of claim 1, further comprising an inorganic insulating layer covering the organic flattening layer, wherein the touch sensor layer is formed on the inorganic insulating layer.

8. The organic electroluminescent device of claim 1, wherein the organic flattening layer covers at least the entirety of the active region in which the plurality of organic electroluminescent elements are located, and is formed in a range larger than a range of the touch sensor layer.

9. The organic electroluminescent device of claim 1, wherein the organic flattening layer covers the entirety of the element substrate.

10. A method for producing the organic electroluminescent device of claim 1, wherein a step of forming the organic flattening layer comprises: step A of preparing the element substrate on which the thin film encapsulation structure is formed; step B of applying a liquid containing a negative-type photosensitive resin to the element substrate such that the liquid covers at least the thin film encapsulation structure; and step C of irradiating the entirety of the photosensitive resin on the element substrate with light.

11. The method of claim 10, wherein the step B is a step of applying the liquid to only a predetermined region on the element substrate.

12. A method for producing the organic electroluminescent device of claim 1, wherein a step of forming the organic flattening layer comprises: step A of preparing the element substrate on which the thin film encapsulation structure is formed; step B of applying a liquid containing a photosensitive resin to the element substrate such that the liquid covers at least the thin film encapsulation structure; step C of selectively irradiating a portion, of the photosensitive resin, that is in a predetermined region on the element substrate or in a region other than the predetermined region, with light; and step D of putting the photosensitive resin into contact with a developer after the step C.

Description

BRIEF DESCRIPTION OF DRAWINGS

(1) FIG. 1A is a schematic partial cross-sectional view of an active region of an OLED display device 100 according to an embodiment of the present invention, and FIG. 1B is a partial cross-sectional view of a TFE structure 10 formed on an OLED 3.

(2) FIG. 2 is a plan view schematically showing a structure of the OLED display device 100 (TFE structure 10 and components below the TFE structure 10) according to an embodiment of the present invention.

(3) FIG. 3A and FIG. 3B are respectively plan views schematically showing structures of OLED display devices 100A and 100B (TFE structure 10 and components above the TFE structure 10) according to an embodiment of the present invention.

(4) FIG. 4A through FIG. 4C are each a schematic cross-sectional view of the OLED display device 100A shown in FIG. 3A; FIG. 4A is a cross-sectional view taken along line 4A-4A′ in FIG. 3A, FIG. 4B is a cross-sectional view taken along line 4B-4B′ in FIG. 3A, and FIG. 4C is a cross-sectional view taken along line 4C-4C′ in FIG. 3A; and FIG. 4D is a cross-sectional view of an OLED display device 1000 in a comparative example, and corresponds to the cross-sectional view taken along line 4B-4B′ in FIG. 3A.

(5) FIG. 5A and FIG. 5B each schematically show a structure of a touch sensor layer 50A, which may be included in an OLED display device according to an embodiment of the present invention.

(6) FIG. 6A and FIG. 6B each schematically show a structure of another touch sensor layer 50B, which may be included in an OLED display device according to an embodiment of the present invention.

(7) FIG. 7A and FIG. 7B are each a schematic cross-sectional view showing an example of TFT that may be included in an OLED display device according to an embodiment.

(8) FIG. 8A and FIG. 8B are each a schematic cross-sectional view of another OLED display device according to an embodiment, and respectively correspond to FIG. 4B and FIG. 4C.

(9) FIG. 9A and FIG. 9B each schematically show a structure of a film formation device 200.

DESCRIPTION OF EMBODIMENTS

(10) Hereinafter, an organic EL device and a method for producing the same according to embodiments of the present invention will be described with reference to the drawings. The embodiments of the present invention are not limited to those described below as examples.

(11) With reference to FIG. 1A and FIG. 1B, a basic structure of an OLED display device 100 according to an embodiment of the present invention will be described. FIG. 1A is a schematic partial cross-sectional view of an active region of the OLED display device 100 according to an embodiment of the present invention. FIG. 1B is a partial cross-sectional view of a TFE structure 10 formed on an OLED 3.

(12) The OLED display device 100 includes a plurality of pixels, and each of the pixels includes at least one organic EL element (OLED). Herein, a structure corresponding to one OLED will be described for the sake of simplicity.

(13) As shown in FIG. 1A, the OLED display device 100 includes a flexible substrate (hereinafter, may be referred to simply as a “substrate”) 1, a circuit (backplane) 2 formed on the substrate 1 and including a TFT, the OLED 3 formed on the circuit 2, and the TFE structure 10 formed on the OLED 3. The OLED 3 is, for example, of a top emission type. An uppermost portion of the OLED 3 is, for example, a top electrode or a cap layer (refractive index adjusting layer). The OLED display device 100 further includes an organic flattening layer 42 provided on the thin film encapsulation structure 10 and formed of a photosensitive resin, an inorganic insulating layer 44 covering the organic flattening layer 42, and a touch sensor layer 50 located on the inorganic insulating layer 44. The inorganic insulating layer 44 may be omitted. An optional polarizing plate 4 is located on the touch sensor layer 50. The polarizing plate 4 may be located between the TFE structure 10 and the touch sensor layer 50 (e.g., between the organic flattening layer 42 and the touch sensor layer 50). The polarizing plate 4 is a circularly polarizing plate (stack body of a linearly polarizing plate and a λ/4 plate), and plays a role of preventing reflection as is well known. From the point of view of preventing reflection, it is preferred that the polarizing plate 4 is located on the touch sensor layer 50 as shown in the figure.

(14) The substrate 1 is, for example, a polyimide film having a thickness of 15 m. The circuit 2 including the TFT has a thickness of, for example, 4 μm. The OLED 3 has a thickness of, for example, 1 μm. The TFE structure 10 has a thickness of, for example, 1.5 μm or less. The organic flattening layer 42 has a thickness of, for example, 3 m or greater and 15 μm or less. The inorganic insulating layer 44 is, for example, an SiN.sub.x layer. The SiN.sub.x layer has a thickness of, for example, 200 nm or greater and 1000 nm or less.

(15) FIG. 1B is a partial cross-sectional view of the TFE structure 10 formed on the OLED 3. A first inorganic barrier layer (e.g., SiN.sub.x layer) 12 is formed immediately on the OLED 3, an organic barrier layer (e.g., acrylic resin layer) 14 is formed on the first inorganic barrier layer 12, and a second inorganic barrier layer (e.g., SiN.sub.x layer) 16 is formed on the organic barrier layer 14.

(16) The organic barrier layer 14 includes a plurality of solid portions that are in contact with a top surface of the first inorganic barrier layer 12 and distributed discretely. A “solid portion” refers to a portion, of the organic barrier layer 14, where an organic film (e.g., photocured resin film) is actually present. By contrast, a portion, of the organic barrier layer 14, where the organic film is absent is referred to as a “non-solid portion”. The non-solid portion enclosed by the solid portion may also be referred to as an “opening”. The second inorganic barrier layer 16 is in contact with the top surface of the first inorganic barrier layer and top surfaces of the plurality of solid portions of the organic barrier layer 14. Namely, the second inorganic barrier layer 16 is in direct contact with the first inorganic barrier layer 12 in the non-solid portion of the organic barrier layer 14.

(17) The TFE structure 10 is formed to protect the active region (see an active region R1 in FIG. 2) of the OLED display device 100. The non-solid portion of the organic barrier layer 14 includes at least a continuous portion provided to enclose the active region R1, and the active region R1 is completely enclosed by the portion in which the first inorganic barrier layer 12 and the second inorganic barrier layer 16 are in direct contact with each other (hereinafter, such a portion will be referred to as an “inorganic barrier layer joint portion”). Therefore, the solid portions of the organic barrier layer 14 do not act as a route for moisture.

(18) A stack structure including the first inorganic barrier layer 12 and the second inorganic barrier layer 16, in contact with the top surface of the first inorganic barrier layer 12 and the top surfaces of the plurality of solid portions of the organic barrier layer 14, included in the TFE structure 10 will be referred to as a “composite stack body (10S)”. The TFE structure 10 includes one composite stack body 10S. The TFE structure 10 is not limited to including one composite stack body 10S and may include two or more composite stack bodies 10S, or may further include an organic insulating layer and/or an inorganic insulating layer. In the case where the TFE structure 10 includes the composite stack body 10S as an uppermost layer, highly reliable encapsulation is realized.

(19) For example, the first inorganic barrier layer 12 and the second inorganic barrier layer 16 are each, for example, an SiN.sub.x layer having a thickness of 400 nm, and the organic barrier layer 14 is, for example, an acrylic resin layer having a thickness less than 100 nm.

(20) The thicknesses of the first inorganic barrier layer 12 and the second inorganic barrier layer 16 are each independently 200 nm or greater and 1500 nm or less, and preferably 1000 nm. The thickness of the organic barrier layer 14 is, for example, 10 nm or greater and less than 500 nm, and preferably 50 nm or greater and less than 300 nm. In the case where the thickness of the organic barrier layer 14 is less than 50 nm, the effect of the organic barrier layer 14 may not be fully provided. By contrast, in the case where the thickness of the organic barrier layer 14 is 500 nm or greater, the effect of the organic barrier layer 14 is saturated while the production cost is increased. It is preferred that the composite stack body 10S has a thickness of 500 nm or greater and 2000 nm or less.

(21) The “thickness” of the organic barrier layer 14 refers to a thickness of a flat portion thereof. A liquid film of a photocurable resin used to form the organic barrier layer 14 forms a flat (horizontal) surface. Therefore, in the case where the underlying layer includes a recessed portion, the thickness of the liquid film is increased in such a region. The liquid film forms a curved surface by a surface tension (encompassing a capillary phenomenon). Therefore, the thickness of the liquid film in the vicinity of a protruding portion of the curved surface is increased. Such a locally thick portion may have a thickness exceeding 500 nm.

(22) The thickness of the composite stack body 10S is preferably 400 nm or greater and less than 2 m, and more preferably 400 nm or greater and less than 1.5 m.

(23) The TFE structure 10 may include an inorganic insulating layer and/or an organic insulating layer below the composite stack body 10S, above the composite stack body 10S, or between two composite stack bodies 10S. In this case, it is preferred that the inorganic insulating layer has a thickness of, for example, 400 nm or greater and 1500 mm or less. In the case where the thickness of the inorganic insulating layer is less than 400 nm, there are merely relatively small particles having a diameter of, for example, about 0.5 μm and the level of barrier property may be undesirably decreased. In the case where the thickness of the inorganic insulating layer exceeds 1500 nm, the barrier property is saturated, while the stress of the film is increased and as a result, the substrate may be warped.

(24) It is preferred that the organic insulating layer has a thickness of 5 m or greater and 20 μm or less in the case of being formed by, for example, a common inkjet method. With the inkjet method, it is difficult to form a uniform organic insulating layer having a thickness less than 5 m. By contrast, in the case where the thickness of the organic insulating layer exceeds 20 μm, the costly material is consumed in a large amount and thus the production cost is increased. Or, in the case where the organic insulating layer is so thick, a component (dam) that keeps the organic material, provided by the inkjet method, at a predetermined position needs to be made high. This complicates the production process.

(25) Now, with reference to FIG. 2 through FIG. 4, the structure of the OLED display device according to an embodiment of the present invention will be described in more detail. In the following, an example in which the TFE structure 10 includes one composite stack body 10S will be described.

(26) First, FIG. 2 will be referred to. FIG. 2 is a plan view schematically showing the structure of the OLED display device 100 (the TFE structure 10 and components below the TFE structure 10) according to an embodiment of the present invention.

(27) The circuit 2 formed on the substrate 1 includes a plurality of TFTs (not shown), and a plurality of gate bus lines (not shown) and a plurality of source bus lines (not shown) each connected to either one of the plurality of TFTs (not shown). The circuit 2 may be a known circuit that drives a plurality of the OLEDs 3. The plurality of OLEDs 3 are each connected with either one of the plurality of TFTs included in the circuit 2. The OLEDs 3 may be known OLEDs.

(28) The circuit 2 further includes a plurality of terminals 34 located in a peripheral region R2 outer to the active region (region enclosed by the dashed line in FIG. 2) R1, where the plurality of OLEDs 3 are located, and also includes a plurality of lead wires 32 each connecting either one of the plurality of terminals 34 and either one of the plurality of gate bus lines or either one of the plurality of source bus lines to each other. The entirety of the circuit 2 including the plurality of TFTs, the plurality of gate bus lines, the plurality of source bus lines, the plurality of lead wires 32 and the plurality of terminals 34 may be referred to as a “driving circuit layer 2”. A portion, of the driving circuit layer 2, that is formed in the active region R1 will be referred to as a “driving circuit layer 2A”.

(29) In FIG. 2 and the like, only the lead wires 32 and/or the terminals 34 may be shown as components of the driving circuit layer 2. Nonetheless, the driving circuit layer 2 includes a conductive layer including the lead wires 32 and the terminals 34 and further includes at least one conductive layer, at least one insulating layer, and at least one semiconductor layer. The structure of the conductive layers, the insulating layer and the semiconductor layer included in the driving circuit layer 2 may be changed in accordance with the structure of the TFT shown in, for example, FIG. 7A and FIG. 7B as an example. An insulating film (base coat) may be formed on the substrate 1 as an underlying layer for the driving circuit layer 2.

(30) The TFE structure 10 (composite stack body 10S) is formed to protect the active region R1. The first inorganic barrier layer 12 and the second inorganic barrier layer 16 are each, for example, an SiN.sub.x layer, and are selectively formed only in a predetermined region, by plasma CVD by use of a mask, so as to cover the active region R1. In this example, the first inorganic barrier layer 12 and the second inorganic barrier layer 16 are independently and selectively formed on the active region R1 and portions, of the plurality of lead wires 32, that are closer to the active region R1. From the point of view of reliability, it is preferred that the second inorganic barrier layer 16 is formed in the same region as that of the first inorganic barrier layer 12 (formed such that the second inorganic barrier layer 16 and the first inorganic barrier layer 12 have matching outer edges) or is formed so as to cover the entirety of the first inorganic barrier layer 12. The active region R1 is enclosed by the inorganic barrier layer joint portion, where the first inorganic barrier layer 12 and the second inorganic barrier layer 16 are in direct contact with each other.

(31) The organic barrier layer 14 may be formed by, for example, the method described in Patent Document No. 2 or 3 mentioned above. For example, in a chamber, a vapor-like or mist-like organic material (e.g., acrylic monomer) is supplied onto an element substrate maintained at a temperature lower than, or equal to, room temperature and is condensed on the element substrate. The organic material put into a liquid state is located locally, more specifically, at a border between a side surface of a protruding portion of, and a flat portion of, the first inorganic barrier layer 12 by a capillary action or a surface tension of the organic material. Then, the organic material is irradiated with, for example, ultraviolet rays to form a solid portion of the organic barrier layer (e.g., acrylic resin layer) 14 at the above-mentioned border in the vicinity of the protruding portion. The organic barrier layer 14 formed by this method does not substantially include the solid portion on the flat portion. Regarding the method for forming the organic barrier layer, the disclosures of Patent Documents Nos. 2 and 3 are incorporated herein by reference.

(32) Alternatively, as described below, the organic barrier layer 14 may be formed by adjusting an initial thickness of the resin layer to be formed by use of a film formation device 200 (e.g., to less than 100 nm) and/or by performing ashing on the resin layer once formed. The ashing may be performed by plasma ashing using, for example, at least one type of gas among N.sub.2O, O.sub.2 and O.sub.3.

(33) Now, FIG. 3A and FIG. 3B will be referred to. FIG. 3A is a plan view schematically showing a structure of an OLED display device 100A (the TFE structure and components above the TFE structure) according to an embodiment of the present invention. FIG. 3B is a plan view schematically showing a structure of an OLED display device 100B (the TFE structure and components above the TFE structure) according to an embodiment of the present invention.

(34) The OLED display device 100A shown in FIG. 3A includes an organic flattening layer 42A formed of a photosensitive resin and provided on the TFE structure 10 and also includes the touch sensor layer 50 located on the organic flattening layer 42A. The OLED display device 100A may further include an inorganic insulating layer (inorganic insulating layer 44 in FIGS. 1A and 1B) provided between the organic flattening layer 42A and the touch sensor layer 50. The organic flattening layer 42A is formed only in a predetermined region on the element substrate, and is formed to expose the terminals 34 and portions, of the lead wires 32, that are in the vicinity of the terminals 34. It is sufficient that the organic flattening layer 42A is formed to cover at least the entirety of the TFE structure 10. It is preferred that the organic flattening layer 42A covers at least the entirety of the active region R1 and is formed in a range larger than that of the touch sensor layer 50.

(35) The organic flattening layer 42A may be formed, for example, as follows.

(36) A liquid containing a negative-type photosensitive resin is applied only to a predetermined region on the element substrate, on which the TFE structure 10 is formed. Then, the photosensitive resin on the element substrate is entirely irradiated with light. When necessary, the photosensitive resin on the element substrate is heated (prebaked) before being irradiated with the light to remove a solvent. After being irradiated with the light, the photosensitive resin on the element substrate may be, for example, heated to be further cured. The step of providing the liquid containing the photosensitive resin may be performed by, for example, a known printing method (e.g., an inkjet method and a screen printing method). Such a method does not require a photomask and does not require the post-exposure photosensitive resin to be developed.

(37) Alternatively, a liquid containing a negative-type photosensitive resin is applied to the entirety of the element substrate, on which the TFE structure 10 is formed, and then a portion, of the photosensitive resin, that is present in a predetermined region on the element substrate is selectively irradiated with light. Still alternatively, a liquid containing a positive-type photosensitive resin is applied to the entirety of the element substrate, on which the TFE structure 10 is formed, and then a portion, of the photosensitive resin, that is present in a region other than the predetermined region on the element substrate is selectively irradiated with light. Then, the photosensitive resin is put into contact with a developer to be developed. Thus, the organic flattening layer 42A is formed in only the predetermined region.

(38) The OLED display device 100B shown in FIG. 3B includes an organic flattening layer 42B formed of a photosensitive resin and provided on the TFE structure 10 and also includes the touch sensor layer 50 located on the organic flattening layer 42B. Unlike in the OLED display device 100A, in the OLED display device 100B, the organic flattening layer 42B covers the entirety of the element substrate. The OLED display device 100B may further include an inorganic insulating layer (inorganic insulating layer 44 in FIGS. 1A and 1B) provided between the organic flattening layer 42B and the touch sensor layer 50.

(39) The organic flattening layer 42B may be formed, for example, as follows.

(40) A liquid containing a negative-type or positive-type photosensitive resin is applied to the entirety of the element substrate, on which the TFE structure 10 is formed, and is exposed to light by use of a photomask and developed. Thus, the organic flattening layer 42B, which has openings 42a exposing the terminals 34, is formed. The terminals 34 may be connected with an external substrate in advance. In this case, there is no need to form the openings 42a, and thus the photomask does not need to be used.

(41) It is preferred that the organic flattening layers 42A and 42B each have a thickness not exceeding 15 m. In the case where the thickness of each of the organic flattening layers 42A and 42B exceeds 15 μm, the bendability thereof may be declined. From the point of view of the flattening function in the case where there is a particle, it is preferred that the thickness of each of the organic flattening layers 42A and 42B is, for example, 3 m or greater.

(42) It is preferred that the photosensitive resin contains, for example, a silicone resin (herein, this term is used in a wide sense and encompasses silicone rubber and silicone elastomer). An organic flattening layer formed of a silicone resin has a transmittance of 80% or higher to light having a wavelength of 350 nm. An acrylic resin may be used instead of the silicone resin. An organic flattening layer formed of an acrylic resin has a high transmittance to visible light. However, in order to realize a transmittance of 80% or higher to light having a wavelength of 350 nm, it is preferred to use a silicone resin. The silicone resin may be, for example, KER-2500 produced by Shin-Etsu Chemical Co., Ltd.

(43) From the point of view of the flexibility (bendability) of the OLED display device, it is preferred that the photosensitive resin has an elastic modulus not exceeding 400 MPa at 0° C. For example, in an evaluation performed by use of a U-shape folding tester produced by Yuasa System Co., Ltd., an organic flattening layer formed of such a photosensitive resin may withstand being folded 10,000 times. Specifically, an organic flattening layer formed of such a photosensitive resin is folded at 25° C. into a U-shape such that the folded portion has a radius of 5 mm, and is subjected to a folding operation 10,000 times at an operating frequency of 1 Hz. Even after this, no crack is recognized visually or by an observation with an optical microscope. In a WVTR evaluation performed by use of Ca (calcium), a value in the order of 10-5 g/m.sup.2.Math.day is obtained. An organic flattening layer formed of such a photosensitive resin also has an effect of alleviating application of an external force, applied to the OLED display device, onto the OLED layer.

(44) As described above, the TFE structure 10 has a high level of barrier property. Therefore, a photosensitive resin may be applied and subjected to an exposure step and a development step on an element substrate on which the TFE structure 10 is formed. The OLED layer is easily deteriorated upon contacting a chemical agent. Therefore, in the case where the level of barrier property of the TFE structure 10 is low, the OLED layer is deteriorated in the development step.

(45) Now, FIG. 4A through FIG. 4D will be referred to. FIG. 4A through FIG. 4C are schematic cross-sectional views of the OLED display device 100A shown in FIG. 3A. FIG. 4A is a cross-sectional view taken along line 4A-4A′ in FIG. 3A, FIG. 4B is a cross-sectional view taken along line 4B-4B′ in FIG. 3A, and FIG. 4C is a cross-sectional view taken along line 4C-4C′ in FIG. 3A. FIG. 4D is a cross-sectional view of an OLED display device 100C in a comparative example, and corresponds to the cross-sectional view taken along line 4B-4B′ in FIG. 3A.

(46) FIG. 4A is a cross-sectional view taken along line 4A-4A′ in FIG. 3A, and shows a portion including a particle P. The particle P is a microscopic dust particle generated during the production of the OLED display device, and is, for example, a microscopic piece of broken glass, a metal particle or an organic particle. Such a particle is generated especially easily in the case where mask vapor deposition is used.

(47) As shown in FIG. 4A, the organic barrier layer (solid portion) 14 may be formed only in the vicinity of the particle P. A reason for this is that the acrylic monomer supplied after the first inorganic barrier layer 12 is formed is condensed and present locally, more specifically, in the vicinity of a surface of a first inorganic barrier layer 12a on the particle P (the surface has a tapering angle θ of 90 degrees or larger). The opening (non-solid portion) of the organic barrier layer 14 is on the flat portion of the first inorganic barrier layer 12.

(48) In the case where the particle (having a diameter of, for example, 1 m or longer) P is present, a crack (defect) 12c may be formed in the first inorganic barrier layer 12. This is considered to be caused by impingement of the SiN.sub.x layer 12a growing from a surface of the particle P and an SiN layer 12b growing from a flat portion of a surface of the OLED 3. In the case where such a crack 12c is present, the level of barrier property of the TFE structure 10 is decreased.

(49) In the TFE structure 10 in the OLED display device 100, as shown in FIG. 4A, the organic barrier layer 14 is formed to fill the crack 12c of the first inorganic barrier layer 12, and a surface of the organic barrier layer 14 (recessed surface) couples the surface of the first inorganic barrier layer 12a on the particle P and a surface of the first inorganic barrier layer 12b on the flat portion of the OLED 3 to each other continuously and smoothly. The organic barrier layer 14 is formed by curing a photocurable resin in a liquid state as described below, and therefore, has a recessed surface formed by a surface tension. In this state, the photocurable resin exhibits a high level of wettability to the first inorganic barrier layer 12. If the level of wettability of the photocurable resin to the first inorganic barrier layer 12 is low, the surface of the organic barrier layer 14 may protrude, instead of being recessed.

(50) The organic barrier layer (solid portion) 14 has such a recessed surface. Therefore, the second inorganic barrier layer 16, which is formed on the first inorganic barrier layer 12a on the particle P and also on the organic barrier layer 14, is a fine film with no defect. As can be seen, even if the particle P is present, the organic barrier layer 14 keeps high the level of barrier property of the TFE structure 10 (composite stack body 10S).

(51) The organic barrier layer (solid portion) 14, which is relatively soft, is present in the vicinity of the particle P, and the second inorganic barrier layer 16 is present continuously on the particle P. Therefore, even if the composite stack body 10S is bent, generation of cracks in the composite stack body 10S from the particle P is suppressed. Thus, the decrease in the level of barrier property by the bending is suppressed, and as a result, the composite stack body 10S has a high resistance against bending.

(52) As shown in FIG. 4B, in a region close to the active region R1 (cross-section taken along line 4B-4B′ in FIG. 3A), the TFE structure 10 and the organic flattening layer 42A are formed on the lead wires 32.

(53) As shown in FIG. 4C, the terminals 34 are exposed and are used to be electrically connected with an external circuit (e.g., FPC (Flexible Printed Circuits)).

(54) In a region including the portion shown in FIG. 4B, the organic barrier layer (solid portion) may be formed during the formation of the organic barrier layer 14 of the TFE structure 10. For example, the OLED display device 100C in the comparative example shown in FIG. 4D includes a TFE structure 10C. In the TFE structure 10C, in a cross-section of each of the lead wires 32 that is taken along a plane parallel to a line width direction thereof, a side surface of the lead wire 32 has a tapering angle θ of 90 degrees or larger. In such a case, an organic barrier layer 14C may be formed on the side surface of the lead wire 32. By contrast, in the OLED display device 100A according to an embodiment, the tapering angle θ of the side surface of the cross-section of each of the lead wires 32 and the terminals 34 is smaller than 90 degrees, and thus the photocurable resin is not located locally. Therefore, the organic barrier layer (solid portion) is not formed on the side surface of any of the lead wires 32 or any of the terminals 34.

(55) Assuming that the method for forming the organic barrier layer described in Patent Document No. 2 or 3 is used in the case where the tapering angle of the side surface is 90 degrees or larger, a vapor-like or mist-like organic material (e.g., acrylic monomer) is condensed, and thus the organic barrier layer (solid portion) is formed, along a border between the side surface and the flat surface (making an angle of 90 degrees or smaller). When this occurs, for example, the organic barrier layer (solid portion) formed along the lead wire acts as a route that guides water vapor in the air to the active region.

(56) In the OLED display device 100A in an embodiment according to the present invention shown in FIG. 4B, the tapering angles of the side surfaces of the lead wires 32 and the first inorganic barrier layer 12 are all smaller than 90 degrees. Thus, the organic barrier layer 14 is not formed along these side surfaces. Therefore, moisture in the air does not reach the inside of the active region R1 via the organic barrier layer (solid portion) 14, and thus the OLED display device 100A may have a high level of moisture-resistant reliability. In this example, the tapering angle of the lead wire 32 is smaller than 90 degrees. It is sufficient that the side surface, of the first inorganic barrier layer 12, that forms a surface immediately below the inorganic barrier layer 14 has a tapering angle smaller than 90 degrees.

(57) In the case where the tapering angle of the side surface is in the range of 70 degrees or larger and smaller than 90 degrees, the organic barrier layer (solid portion) 14 may be formed along the side surface. Needless to say, the resin present locally, namely, along the inclining side surface, is removed by ashing. However, the ashing is time-consuming. For example, the ashing needs to be performed for a long time even after the resin formed on the flat surface is removed. In addition, there may be a problem that as a result of the organic barrier layer (solid portion) formed in the vicinity of the particle P being excessively ashed (removed), the effect of the formation of the organic barrier layer is not fully provided. In order to suppress or prevent this problem, the tapering angle θ of the first inorganic barrier layer 12 is preferably smaller than 70 degrees, and more preferably 60 degrees or smaller.

(58) The touch sensor layer 50 included in the OLED display device 100 according to an embodiment of the present invention may be a known touch sensor layer, for example, a touch sensor of a resistive film system or of a projected capacitive system. With reference to FIGS. 5A-5B and FIGS. 6A-6B, structures of a touch sensor layer 50A and a touch sensor layer 50B preferably usable for the OLED display device 100 will be described.

(59) FIG. 5A is a schematic plan view of the touch sensor layer 50A, and FIG. 5B is a cross-sectional view of the touch sensor layer 50A. The touch sensor layer 50A is formed on the inorganic insulating layer 44 formed on the organic flattening layer 42.

(60) The touch sensor layer 50A includes a plurality of X electrodes 52A extending in an X direction and a plurality of Y electrodes 54A extending in a Y direction perpendicular to the X direction. The X electrodes 52A and the Y electrodes 54A are both formed of a metal mesh. A minimum unit of the metal mesh is, for example, a square having a size of 35 μm×35 μm. A plurality of such squares are assembled to form a square unit electrode having a size of, for example, 3 mm×3 mm. Such unit electrodes are connected in the X direction or the Y direction by wires. At a portion where the wires cross each other, the wires are insulated from each other by, for example, an inorganic insulating layer (SiN.sub.x layer) (not shown). The metal mesh has, for example, a stack structure of a Ti layer and an Al layer, or a stack structure of Ti layer/Al layer/Ti layer.

(61) FIG. 6A is a schematic plan view of the touch sensor layer 50B, and FIG. 6B is a cross-sectional view of the touch sensor layer 50B. The touch sensor layer 50B is formed on the inorganic insulating layer 44 formed on the organic flattening layer 42. X electrodes 52B and Y electrodes 54B included in the touch sensor layer 50B are each formed of a transparent conductive layer (e.g., ITO layer), and are insulated from each other by an inorganic insulating layer (e.g., SiN.sub.x layer). From the point of view of light transmittance, the touch sensor layer 50A is more advantageous.

(62) In order to produce the flexible OLED display device 100, a polyimide film, for example, is formed on a support substrate (e.g., glass substrate), and the polyimide film on the support substrate is used as the substrate 1. An OLED display device including the touch sensor layer 50A or 50B described herein as an example may be obtained by peeling off the polyimide film from the support substrate after the touch sensor layer 50A or 50B is formed.

(63) Now, with reference to FIGS. 7A-7B and FIGS. BA-8B, an example of TFT usable for the OLED display device 100, and an example of lead wires and terminals formed by use of a gate metal layer and a source metal layer used to form the TFT, will be described.

(64) For a medium- or small-sized high-definition OLED display device, a low temperature polycrystalline silicon (hereinafter, referred to simply as “LTPS”) TFT or an oxide TFT (e.g., four-component-based (In—Ga—Zn—O-based) oxide TFT containing In (indium), Ga (gallium), Zn (zinc) and O (oxygen)) having a high mobility is preferably used. Structures of, and methods for producing, the LTPS-TFT and the In—Ga—Zn—O-based TFT are well known and will be described below merely briefly.

(65) FIG. 7A is a schematic cross-sectional view of an LTPS-TFT 2.sub.PT. The TFT 2.sub.PT may be included in the circuit 2 of the OLED display device 100. The LTPS-TFT 2.sub.PT is a top gate-type TFT.

(66) The TFT 2.sub.PT is formed on a base coat 2.sub.pp on the substrate (e.g., polyimide film) 1. Although not described above, it is preferred that a base coat formed of an inorganic insulating material is formed on the substrate 1.

(67) The TFT 2.sub.PT includes a polycrystalline silicon layer 2.sub.Pse formed on the base coat 2.sub.pp, a gate insulating layer 2.sub.Pgi formed on the polycrystalline silicon layer 2.sub.Pse, a gate electrode 2.sub.pg formed on the gate insulating layer 2.sub.pgi, an interlayer insulating layer 2.sub.pi formed on the gate electrode 2.sub.pq, and a source electrode 2.sub.pss and a drain electrode 2.sub.psd formed on the interlayer insulating layer 2.sub.pi. The source electrode 2.sub.pss and the drain electrode 2.sub.psd are respectively connected with a source region and a drain region of the polycrystalline silicon layer 2.sub.Pse in contact holes formed in the interlayer insulating layer 2.sub.pi and the gate insulating layer 2.sub.pgi.

(68) The gate electrode 2.sub.pq is included in a gate metal layer including the gate bus lines, and the source electrode 2.sub.pss and the drain electrode 2.sub.psd are included in a source metal layer including the source bus lines. The gate metal layer and the source metal layer are used to form lead wires and terminals (described below with reference to FIGS. 8A-8B).

(69) The TFT 2.sub.PT is formed, for example, as follows.

(70) As the substrate 1, a polyimide film having a thickness of 15 μm, for example, is prepared.

(71) The base coat 2.sub.pp (SiO.sub.2 film: 250 nm/SiN.sub.x film: 50 nm/SiO.sub.2 film: 500 nm (top layer/middle layer/bottom layer)) and an a-Si film (40 nm) are formed by plasma CVD.

(72) The a-Si film is subjected to dehydrogenation (e.g., annealed at 450° C. for 180 minutes).

(73) The a-Si film is polycrystalline-siliconized by excimer laser annealing (ELA).

(74) The a-Si film is patterned by a photolithography step to form an active layer (semiconductor island).

(75) A gate insulating film (SiO.sub.2 film: 50 nm) is formed by plasma CVD.

(76) A channel region of the active layer is doped with (B.sup.+).

(77) The gate metal layer (Mo: 250 nm) is formed by sputtering and patterned by a photolithography step (including a dry etching step) (to form the gate electrode 2.sub.pg, the gate bus lines, and the like).

(78) A source region and a drain region of the active layer are doped with (P.sup.+).

(79) Activation annealing (e.g., annealing at 450° C. for 45 minutes) is performed. As a result, the polycrystalline silicon layer 2.sub.Pse is formed.

(80) An interlayer insulating film (e.g., SiO.sub.2 film: 300 nm/SiN.sub.x film: 300 nm (top layer/bottom layer)) is formed by plasma CVD.

(81) The contact holes are formed in the gate insulating film and the interlayer insulating film by dry etching. As a result, the interlayer insulating layer 2.sub.pi and the gate insulating layer 2.sub.pgi are formed.

(82) The source metal layer (Ti film: 100 nm/Al film: 300 nm/Ti film: 30 nm) is formed by sputtering and patterned by a photolithography step (including a dry etching step) (to form the source electrode 2.sub.pss, the drain electrode 2.sub.psd, the source bus lines, and the like).

(83) FIG. 7B is a schematic cross-sectional view of an In—Ga—Zn—O-based TFT 2.sub.0T. The TFT 2.sub.0T may be included in the circuit 2 of the OLED display device 100A. The TFT 2.sub.0T is a bottom gate-type TFT.

(84) The TFT 2.sub.0T is formed on a base coat 2.sub.op on the substrate 1 (e.g., polyimide film). The TFT 2.sub.0T includes a gate electrode 2.sub.og formed on the base coat 2.sub.op, a gate insulating layer 2.sub.ogi formed on the gate electrode 2.sub.og, an oxide semiconductor layer 2.sub.ose formed on the gate insulating layer 2.sub.ogi, and a source electrode 2.sub.oss and a drain electrode 2.sub.oad respectively formed on a source region and a drain region of the oxide semiconductor layer 2.sub.ose. The source electrode 2.sub.oss and the drain electrode 2.sub.osd are covered with an interlayer insulating layer 2.sub.oi.

(85) The gate electrode 2.sub.og is included in a gate metal layer including the gate bus lines, and the source electrode 2.sub.oss and the drain electrode 2.sub.0d are included in a source metal layer including the source bus lines. The gate metal layer and the source metal layer are used to form lead wires and terminals, and thus the TFT 2.sub.oT may have a structure described below with reference to FIGS. 8A-8B.

(86) The TFT 2.sub.oT is formed, for example, as follows.

(87) As the substrate 1, a polyimide film having a thickness of 15 μm, for example, is prepared.

(88) The base coat 2.sub.op (SiO.sub.2 film: 250 nm/SiN.sub.x film: 50 nm/SiO.sub.2 film: 500 nm (top layer/middle layer/bottom layer)) is formed by plasma CVD.

(89) The gate metal layer (Cu film: 300 nm/Ti film: 30 nm (top layer/bottom layer)) is formed by sputtering and patterned by a photolithography step (including a dry etching step) (to form the gate electrode 2.sub.og, the gate bus lines, and the like).

(90) A gate insulating film (SiO.sub.2 film: 30 nm/SiN.sub.x film: 350 nm (top layer/bottom layer)) is formed by plasma CVD.

(91) An oxide semiconductor film (In—Ga—Z—O-based semiconductor film: 100 nm) is formed by sputtering and patterned by a photolithography step (including a wet etching step) to form an active layer (semiconductor island).

(92) The source metal layer (Ti film: 100 nm/Al film: 300 nm/Ti film: 30 nm (top layer/middle layer/bottom layer)) is formed by sputtering and patterned by a photolithography step (including a dry etching step) (to form the source electrode 2.sub.oss, the drain electrode 2.sub.osd, the source bus lines, and the like).

(93) Activation annealing (e.g., annealing at 300° C. for 120 minutes) is performed. As a result, the oxide semiconductor layer 2.sub.ose is formed.

(94) Then, an interlayer insulating film 2.sub.oi (e.g., SiN.sub.x film: 300 nm/SiO.sub.2 film: 300 nm (top layer/bottom layer)) is formed by plasma CVD as a protective film.

(95) Now, with reference to FIG. 8A and FIG. 8B, a structure of another OLED display device according to an embodiment will be described. The circuit (backplane) 2 of this OLED display device includes the TFT 2.sub.PT shown in FIG. 7A or the TFT 2.sub.oT shown in FIG. 7B. The gate metal layer and the source metal layer used to form the TFT 2.sub.PT or the TFT 2.sub.oT are used to form a lead wire 32A and a terminal 34A. FIG. 8A and FIG. 8B respectively correspond to FIG. 4B and FIG. 4C. Components corresponding to those in FIG. 4B and FIG. 4C will be represented by the identical reference signs thereto provided with letter “A” at the end. The TFE structure 10A shown in FIG. 8A is covered with an organic flattening layer (not shown). A base coat 2p in FIG. 8A and FIG. 8B corresponds to the base coat 2.sub.pp in FIG. 7A and the base coat 2.sub.op in FIG. 7B. A gate insulating layer 2gi in FIG. 8A and FIG. 8B corresponds to the gate insulating layer 2.sub.pgi in FIG. 7A and the gate insulating layer 2.sub.ogi in FIG. 7B. An interlayer insulating layer 2i in FIG. 8A and FIG. 8B corresponds to the interlayer insulating layer 2.sub.pi in FIG. 7A and the interlayer insulating layer 2.sub.oi in FIG. 7B.

(96) As shown in FIG. 8A and FIG. 8B, a gate metal layer 2g and a source metal layer 2a are formed on the base coat 2p, which is formed on the substrate 1. Although not shown in FIGS. 4A-4D, it is preferred that the base coat 2p formed of an inorganic insulating material is formed on the substrate 1.

(97) As shown in FIG. 8A and FIG. 8B, the lead wire 32A and the terminal 34A are each formed as a stack body of the gate metal layer 2g and the source metal layer 2s. A portion of the lead wire 32A and a portion of the terminal 34A that are formed of the gate metal layer 2g have, for example, the same cross-sectional shape as that of the gate bus lines. A portion of the lead wire 32A and a portion of the terminal 34A that are formed of the source metal layer 2a have, for example, the same cross-sectional shape as that of the source bus lines. In the case of, for example, a 5.7-type display device of 500 ppi, the portion formed of the gate metal layer 2g has a line width of, for example, 10 μm, and a distance between two adjacent such lines is 16 μm (L/S=10/16). The portion formed of the source metal layer 2a has a line width of, for example, 16 μm, and a distance between two adjacent such lines is 10 μm (L/S=16/10). These portions each have a tapering angle θ smaller than 90 degrees, preferably smaller than 70 degrees, and more preferably 60 degrees or smaller.

(98) Now, with reference to FIG. 9A and FIG. 9B, a film formation device 200 usable to form an organic barrier layer, and a film formation method using the same will be described. FIG. 9A and FIG. 9B schematically show a structure of the film formation device 200. FIG. 9A shows a state of the film formation device 200 in a step of, in a chamber having a vapor-like or mist-like photocurable resin located therein, condensing the photocurable resin on the first inorganic barrier layer. FIG. 9B shows a state of the film formation device 200 in a step of irradiating the photocurable resin with light to which the photocurable resin is sensitive and thus curing the photocurable resin.

(99) The film formation device 200 includes a chamber 210 and a partition wall 234 dividing an inner space of the chamber 210 into two spaces. In one of the spaces, in the chamber 210, demarcated by the partition wall 234, a stage 212 and a shower plate 220 are located. In the other space demarcated by the partition wall 234, an ultraviolet irradiation device 230 is located. The inner space of the chamber 210 is controlled to have a predetermined pressure (vacuum degree) and a predetermined temperature. The stage 212 has a top surface that receives an element substrate 20 including the plurality of the OLEDs 3, on which the first inorganic barrier layer is formed. The top surface may be cooled down to, for example, −20° C.

(100) The shower plate 220 is located to have a gap 224 between the shower plate 220 and the partition wall 234. The shower plate 220 includes a plurality of through-holes 222. The gap 224 may have a size of, for example, 100 mm or longer and 1000 mm or shorter in a vertical direction. An acrylic monomer (vapor-like or mist-like) supplied to the gap 224 is supplied, via the plurality of through-holes 222 of the shower plate 220, to one of the spaces of the chamber 210 in which the stage 212 is located. When necessary, the acrylic monomer is heated. A vapor-like or mist-like acrylic monomer 26p is attached to, or contacts, the first inorganic barrier layer on the element substrate 20. An acrylic monomer 26 is supplied from a container 202 into the chamber 210 at a predetermined flow rate. The container 202 is supplied with the acrylic monomer 26 via a pipe 206 and is also supplied with nitrogen gas from a pipe 204. The flow rate of the acrylic monomer supplied to the container 202 is controlled by a mass flow controller 208. A material supply device includes the shower plate 220, the container 202, the pipes 204 and 206, the mass flow controller 208 and the like.

(101) The ultraviolet irradiation device 230 includes an ultraviolet light source and an optional optical element. The ultraviolet light source may be, for example, an ultraviolet lamp (e.g., mercury lamp (encompassing a high-pressure lamp and a super-high pressure lamp), a mercury-xenon lamp or a metal halide lamp). Alternatively, the ultraviolet light source may be an ultraviolet light emitting semiconductor element such as an ultraviolet LED, an ultraviolet semiconductor laser or the like. The optical element encompasses, for example, a reflective mirror, a prism, a lens, an optical fiber, a diffractive element, a spatial modulation element, and a hologram. A plurality of ultraviolet light sources may be used in the case where the ultraviolet light sources are of a certain type or a certain size.

(102) The ultraviolet irradiation device 230 emits light having a predetermined wavelength and a predetermined intensity toward the top surface of the stage 212 when being located at a predetermined position. It is preferred that the partition wall 234 and the shower plate 220 are formed of a material having a high transmittance to ultraviolet rays, for example, quartz.

(103) The organic barrier layer 14 may be formed, for example, as follows by use of the film formation device 200. In this example, an acrylic monomer is used as the photocurable resin.

(104) The acrylic monomer 26p is supplied into the chamber 210. The element substrate 20 has been cooled to, for example, −15° C. on the stage 212. The acrylic monomer 26p is condensed on the first inorganic barrier layer 12 on the element substrate 20. The conditions in this step may be controlled such that the liquid-state acrylic monomer is present locally, more specifically, only in the vicinity of the protruding portion of the first inorganic barrier layer 12. Alternatively, the conditions may be controlled such that the acrylic monomer condensed on the first inorganic barrier layer 12 forms a liquid film.

(105) The viscosity and/or the surface tension of the photocurable resin in the liquid state may be adjusted to control the thickness of the liquid film or the shape of the portion of the liquid film that is to be in contact with the protruding portion of the first inorganic barrier layer 12 (namely, the shape of the recessed portion). For example, the viscosity and the surface tension depend on the temperature. Therefore, the temperature of the element substrate may be adjusted to control the viscosity and the surface tension. For example, the size of the solid portion that is present on the flat portion may be controlled by the shape of a portion, of the liquid film, that is to be in contact with the protruding portion of the first inorganic barrier layer 12 (namely, the shape of the recessed portion) and by the conditions of ashing to be performed in a later step.

(106) Next, the ultraviolet irradiation device 230 is used to, typically, irradiate the entirety of a top surface of the element substrate 20 with ultraviolet rays 232 to cure the acrylic monomer on the first inorganic barrier layer 12. As an ultraviolet light source, for example, a high-pressure mercury lamp that provides light having a main peak wavelength of 365 nm is used. The ultraviolet rays are directed at an intensity of, for example, 12 mW/cm.sup.2 for about 10 seconds.

(107) The organic barrier layer 14 formed of an acrylic resin is formed in this manner. The tact time of the step of forming the organic barrier layer 14 is shorter than, for example, about 30 seconds. Thus, the mass-productivity is very high.

(108) Alternatively, after the photocurable resin in the liquid state is cured and ashing is performed, the organic barrier layer 14 may be formed only in the vicinity of the protruding portion. Even in the case where the organic barrier layer 14 is formed by curing the photocurable resin present locally, ashing may be performed. The ashing improves the adhesiveness between the organic barrier layer 14 and the second inorganic barrier layer 16. Namely, the ashing may be used to modify (make hydrophilic) the surface of the organic barrier layer 14, as well as to remove an extra portion of the organic barrier layer once formed.

(109) The ashing may be performed by use of a known plasma ashing device, a known photoexcitation ashing device, or a known UV ozone ashing device. For example, plasma ashing using at least one type of gas among N.sub.2O, O.sub.2 and O.sub.3, or a combination of such plasma ashing and ultraviolet irradiation, may be performed. In the case where an SiN film is formed by CVD as each of the first inorganic barrier layer 12 and the second inorganic barrier layer 16, N.sub.2O is used as a material gas. Therefore, use of N.sub.2O for the ashing provides an advantage that the device is simplified.

(110) In the case where the ashing is performed, the surface of the organic barrier layer 14 is oxidized and thus is modified to be hydrophilic. In addition, the surface of the organic barrier layer 14 is shaved almost uniformly, and extremely tiny convexed and concaved portions are formed, which increases the surface area size. The effect of increasing the surface area size provided by the ashing is greater for the surface of the organic barrier layer 14 than for the first inorganic barrier layer 12 formed of an inorganic material. Since the surface of the organic barrier layer 14 is modified to be hydrophilic and the surface area size of the surface is increased, the adhesiveness of the organic barrier layer 14 with the second inorganic barrier layer 16 is improved.

(111) After the above, the resultant body is transported to a CVD chamber in order to form the second inorganic barrier layer 16. The second inorganic barrier layer 16 is formed under, for example, the same conditions as those for the first inorganic barrier layer 12. The second inorganic barrier layer 16 is formed in the region where the first inorganic barrier layer 12 is formed. Therefore, the inorganic barrier layer joint portion, where the first inorganic barrier layer 12 and the second inorganic barrier layer 16 are in direct contact with each other, is formed in the non-solid portion of the organic barrier layer 14. For this reason, as described above, water vapor in the air is suppressed or prevented from reaching the inside of the active region via the organic barrier layer.

(112) The first inorganic barrier layer 12 and the second inorganic barrier layer 16 are formed, for example, as follows. An inorganic barrier layer having a thickness of 400 nm may be formed by plasma CVD using SiH.sub.4 gas and N.sub.2O gas, at a film formation rate of 400 nm/min, in a state where, for example, the temperature of the substrate on which the inorganic barrier layer is to be formed (the temperature of the OLED 3) is controlled to be 80° C. or lower. The inorganic barrier layer thus formed has a refractive index of 1.84 and a transmittance of 90% to visible light having a wavelength of 400 nm (thickness: 400 nm). The film stress has an absolute value of 50 MPa.

(113) The inorganic barrier layer may be an SiO.sub.2 layer, an SiO.sub.xN.sub.y (x>y) layer, an SiN.sub.xO.sub.y (x>y) layer, an Al.sub.2O.sub.3 layer or the like as well as an SiN.sub.x layer. A photocurable resin contains, for example, a vinyl group-containing monomer. Among vinyl group-containing monomers, an acrylic monomer is preferably used. A photoinitiator may be incorporated into the acrylic monomer when necessary. As the acrylic monomer, any of various known acrylic monomers is usable. A plurality of acrylic monomers may be mixed together. For example, a two-functional monomer and a monomer including three or more functional groups may be mixed together. An oligomer may be mixed. As the photocurable resin, an ultraviolet-curable silicone resin may be used. A silicone resin (encompassing silicone rubber) is highly transmissive to visible light and highly resistant against climate, and is not easily yellowed even after being used for a long period of time. A photocurable resin that is cured by being irradiated with visible light may be used. The photocurable resin, before being cured, has a viscosity at room temperature (e.g., 25° C.) that is preferably lower than, or equal to, 10 Pa-s, and is especially preferably 1 to 100 mPa-s. In the case where the viscosity is too high, it may be difficult to form a thin film having a thickness of 500 nm or less.

(114) In the above, embodiments of an OLED display device including a flexible substrate and a method for producing the same are described. The embodiments of the present invention are not limited to those described above. An embodiment of the present invention is widely applicable to an organic EL device (e.g., organic EL illumination device) including an organic EL element formed on a substrate that is not flexible (e.g., glass substrate) and a thin film encapsulation structure formed on the organic EL element.

INDUSTRIAL APPLICABILITY

(115) An embodiment of the present invention is applicable to an organic EL device and a method for producing the same. An embodiment of the present invention is especially preferably applicable to an flexible organic EL display device and a method for producing the same.

REFERENCE SIGNS LIST

(116) 1 substrate (flexible substrate) 2 circuit (driving circuit or backplane) 3 organic EL element 4 polarizing plate 10 thin film encapsulation structure (TFE structure) 12 first inorganic barrier layer (SiN.sub.x layer) 14 organic barrier layer (acrylic resin layer) 16 second inorganic barrier layer (SiN.sub.x layer) 20 element substrate 26 acrylic monomer 26p vapor-like or mist like acrylic monomer 100, 100A organic EL display device