Method for manufacturing insulating layer for semiconductor package and insulating layer for semiconductor package using the same

Abstract

The present invention relates to a method for manufacturing an insulating layer for a semiconductor package which can improve reliability and have excellent heat resistance by removing pores generated in the insulating layer during manufacture of an insulating layer for a semiconductor package using magnetic characteristics, and an insulating layer for a semiconductor package obtained using the method for manufacturing the insulating layer for a semiconductor package.

Claims

1. A method for manufacturing an insulating layer for a semiconductor package comprising the steps of: a first step of forming, on a circuit board, a thermosetting resin film containing a heat-curable binder resin, a heat curing catalyst, and 30% to 90% by weight of a metal grafting porous structure based on the total weight of the thermosetting resin film; and a second step of heat curing the thermosetting resin film to prepare the insulating layer on the circuit board, wherein in at least one of the first step and the second step, a magnetic field of 0.1 T to 1 T is applied to the thermosetting resin film.

2. The method for manufacturing an insulating layer for a semiconductor package according to claim 1, wherein, when the magnetic field of 0.1 T to 1 T is applied to the thermosetting resin film, the metal grafting porous structure contained in the thermosetting resin film has a Moment/Mass measurement value of 0.6 emu/g to 2.0 emu/g as measured using a vibration sample magnetometer.

3. The method for manufacturing an insulating layer for a semiconductor package according to claim 1, wherein the thermosetting resin film further includes pores having an average diameter of 1.2 μm or more before the magnetic field of 0.1 T to 1 T is applied to the thermosetting resin film.

4. The method for manufacturing an insulating layer for a semiconductor package according to claim 1, wherein the thermosetting resin film includes pores having an average diameter of 1 μm or less after the magnetic field of 0.1 T to 1 T is applied to the thermosetting resin film.

5. The method for manufacturing an insulating layer for a semiconductor package according to claim 1, wherein the metal grafting porous structure is a structure having a metal grafted to a molecular sieve containing silicate.

6. The method for manufacturing an insulating layer for a semiconductor package according to claim 5, wherein the molecular sieve containing silicate includes a zeolite, a silica molecular sieve having fine pores uniformly formed or a mixture thereof.

7. The method for manufacturing an insulating layer for a semiconductor package according to claim 6, wherein the zeolite is one or more selected from the group consisting of mordenite, ferrierite, ZSM-5, β-zeolite, Ga-silicate, Ti-silicate, Fe-silicate, and Mn-silicate.

8. The method for manufacturing an insulating layer for a semiconductor package according to claim 6, wherein the silica molecular sieve includes one or more selected from the group consisting of MCM-22, MCM-41, and MCM-48.

9. The method for manufacturing an insulating layer for a semiconductor package according to claim 5, wherein the metal is one or more selected from the group consisting of nickel, copper, iron, and aluminum.

10. The method for manufacturing an insulating layer for a semiconductor package according to claim 1, wherein the metal grafting porous structure includes a structure having a metal grafted to a silica molecular sieve in which fine pores having a diameter of 1 nm to 30 nm are uniformed formed.

11. The method for manufacturing an insulating layer for a semiconductor package according to claim 1, wherein the metal grafting porous structure is one or more selected from the group consisting of Ni/MCM-41, Fe/MCM-41, and Cu/MCM-41.

12. The method for manufacturing an insulating layer for a semiconductor package according to claim 1, wherein the metal grafting porous structure has a particle diameter of 1 μm or less.

13. The method for manufacturing an insulating layer for a semiconductor package according to claim 1, wherein the thermosetting resin film contains 1% to 65% by weight of the heat-curable binder resin, and 0.1% to 20% by weight of the heat curing catalyst based on the total weight of the thermosetting resin film.

14. The method for manufacturing an insulating layer for a semiconductor package according to claim 1, wherein the heat-curable binder resin is a thermosetting resin containing one or more functional groups selected from the group consisting of an epoxy group, an oxetanyl group, a cyclic ether group, and a cyclic thioether group.

Description

BRIEF DESCRIPTION OF DRAWINGS

(1) FIG. 1 is a simplified illustration of a process for preparing a silicate-containing molecular sieve according to one embodiment of the present invention.

(2) FIG. 2 is a scanning electron microscope image of Ni/MCM-41 prepared according to an embodiment of the present invention.

(3) FIG. 3 shows VSM analysis results of the insulating films of Examples 1 and 2 of the present invention and a reference example.

DETAILED DESCRIPTION OF THE EMBODIMENTS

(4) Below, the function and effect of the present invention will be described in more detail by way of examples. However, these examples are provided for illustrative purposes only, and should not be construed as limiting the scope of the present invention to these examples.

[EXAMPLE] MANUFACTURE OF THERMOSETTING INSULATING FILM AND SEMICONDUCTOR PACKAGE

Example 1

(5) (1) Manufacture of Insulating Film for Semiconductor Package

(6) The respective components were mixed using 35 wt % of YD-127 (KUKDO Chemical) as a heat-curable binder, 40 wt % of a metal grafting porous structure Ni/MCM-41 as a filler, 5 wt % of 2-phenylimidazole as a heat curing catalyst, 3 wt % of a leveling agent as a coating additive, and 17 wt % of PGMEA as a solvent, and then the mixture was stirred and dispersed with a three-roll mill device to prepare a thermosetting resin composition.

(7) The thermosetting resin composition thus prepared was coated onto PET used as a carrier film using a comma coater, and then dried through an oven at 110° C. for 4 to 5 minutes to manufacture an insulating film (thickness of 100 μm) in which a carrier film was laminated.

(8) (2) Manufacture of Semiconductor Package

(9) The insulating film manufactured above was vacuum laminated on a semiconductor package substrate on which a semiconductor chip was mounted with a vacuum laminator (MV LP-500, manufactured by Meiki Seisakusho Co., Ltd.) to remove a carrier film. A magnetic field of 0.5 T was applied to the insulating film using a magnetic field application device to vibrate the Ni/MCM-41. Thereafter, by heating and curing at 180° C. for 1 hour, a semiconductor package including an insulating layer was manufactured.

(10) The semiconductor package substrate on which the semiconductor chip was mounted used that in which a copper clad laminate (CCL), LG-T-500GA, of LG Chem. Ltd., having a thickness of 0.1 mm and a copper thickness of 12 μm was cut into a substrate of 5 cm in width and 5 cm in length and the semiconductor chip was mounted on the surface.

Example 2

(11) (1) Manufacture of Insulating Film for Semiconductor Package

(12) A thermosetting resin composition and an insulating film were manufactured in the same manner as in Example 1, except that Fe/MCM-41 was used instead of Ni/MCM-41 as the metal grafting porous structure.

(13) (2) Manufacture of Semiconductor Package

(14) A semiconductor package including an insulating layer was completed in the same manner as in Example 1, except that the insulating film manufactured as above was used.

Example 3

(15) (1) Manufacture of Insulating Film for Semiconductor Package

(16) A thermosetting resin composition and an insulating film were manufactured in the same manner as in Example 1, except for using 5 wt % of YD-127 (KUKDO Chemical) as a heat-curable binder, 80 wt % of a metal grafting porous structure Ni/MCM-41 as a filler, 5 wt % of 2-phenylimidazole as a heat curing catalyst, 3 wt % of a leveling agent as a coating additive, and 7 wt % of PGMEA as a solvent.

(17) (2) Manufacture of Semiconductor Package

(18) A semiconductor package including an insulating layer was completed in the same manner as in Example 1, except that the insulating film manufactured as above was used.

Example 4

(19) (1) Manufacture of Insulating Film for Semiconductor Package

(20) A thermosetting resin composition and an insulating film were manufactured in the same manner as in Example 1.

(21) (2) Manufacture of Semiconductor Package

(22) A semiconductor package including an insulating layer was completed in the same manner as in Example 1, except that a magnetic field of 0.6 T was applied to the insulating film.

Example 5

(23) (1) Manufacture of Insulating Film for Semiconductor Package

(24) A thermosetting resin composition and an insulating film were manufactured in the same manner as in Example 1.

(25) (2) Manufacture of Semiconductor Package

(26) The prepared insulating film was vacuum laminated on a semiconductor package substrate on which a semiconductor chip was mounted with a vacuum laminator (MV LP-500, manufactured by Meiki Seisakusho Co., Ltd.). Then, while heating and curing at 180° C. for 1 hour, a magnetic field of 0.5 T was applied to the insulating film using a magnetic field application device to vibrate the Ni/MCM-41. Thereby, a semiconductor package including an insulating layer was manufactured.

Example 6

(27) (1) Manufacture of Insulating Film for Semiconductor Package

(28) A thermosetting resin composition and an insulating film were manufactured in the same manner as in Example 5, except that Fe/MCM-41 was used instead of Ni/MCM-41 as the metal grafting porous structure.

(29) (2) Manufacture of Semiconductor Package

(30) A semiconductor package including an insulating layer was completed in the same manner as in Example 5, except that the insulating film manufactured above was used.

Example 7

(31) (1) Manufacture of Insulating Film for Semiconductor Package

(32) A thermosetting resin composition and an insulating film were manufactured in the same manner as in Example 5, except for using 5 wt % of YD-127 (KUKDO Chemical) as a heat-curable binder, 80 wt % of a metal grafting porous structure Ni/MCM-41 as a filler, 5 wt % of 2-phenylimidazole as a heat curing catalyst, 3 wt % of a leveling agent as a coating additive, and 7 wt % of PGMEA as a solvent.

(33) (2) Manufacture of Semiconductor Package

(34) A semiconductor package including an insulating layer was completed in the same manner as in Example 5, except that the insulating film manufactured as above was used.

Example 8

(35) (1) Manufacture of Insulating Film for Semiconductor Package

(36) A thermosetting resin composition and an insulating film were manufactured in the same manner as in Example 5.

(37) (2) Manufacture of Semiconductor Package

(38) A semiconductor package including an insulating layer was completed in the same manner as in Example 5, except that a magnetic field of 0.6 T was applied to the insulating film.

[COMPARATIVE EXAMPLE] MANUFACTURE OF THERMOSETTING INSULATING FILM AND SEMICONDUCTOR PACKAGE

Comparative Example 1

(39) A semiconductor package including an insulating layer was completed in the same manner as in Example 1, except that a magnetic field of 0.04 T was applied to the insulating film in Example 1.

Comparative Example 2

(40) A semiconductor package including an insulating layer was completed in the same manner as in Example 1, except for using 56.5 wt % of YD-127 (KUKDO Chemical) as a heat-curable binder, 18.5 wt % of a metal grafting porous structure Ni/MCM-41 as a filler, 5 wt % of 2-phenylimidazole as a heat curing catalyst, 3 wt % of a leveling agent as a coating additive, and 17 wt % of PGMEA as a solvent.

Comparative Example 3

(41) A semiconductor package including an insulating layer was completed in the same manner as in Example 5, except that a magnetic field of 0.04 T was applied to the insulating film in Example 5.

Comparative Example 4

(42) A semiconductor package including an insulating layer was completed in the same manner as in Example 5, except for using 56.5 wt % of YD-127 (KUKDO Chemical) as a heat-curable binder, 18.5 wt % of a metal grafting porous structure Ni/MCM-41 as a filler, 5 wt % of 2-phenylimidazole as a heat curing catalyst, 3 wt % of a leveling agent as a coating additive, and 17 wt % of PGMEA as a solvent.

Test Example

(43) With respect to the insulating film for a semiconductor package or the insulating layer contained in the semiconductor package manufactured in Examples 1 to 8 and Comparative Examples 1 to 4, a magnetic characteristic, internal pore characteristic, and reliability were evaluated, and the results are shown in Table 1 below.

(44) 1. Measurement Method of Magnetic Characteristic

(45) With respect to Ni/MCM-41 and Fe/MCM-41 respectively contained in the insulating films obtained in Examples 1 and 2, a curve satisfying magnetic field intensity (gauss) on the X axis and Moment/Mass (emu/g) on the Y axis was derived using a vibration sample magnetometer (VSM), and the results are shown in FIG. 3. In addition, the VSM curve for silica as a reference example is shown together therewith in FIG. 3.

(46) Specifically, in FIG. 3, the VSM curve of Ni/MCM-41 contained in the insulating film obtained in Example 1 is the first curve, the VSM curve of Fe/MCM-41 contained in the insulating filmobtained in Example 2 is the second curve, and the VSM curve of the silica contained in the insulating film obtained in the reference example is the third curve.

(47) 2. Measurement Method of Internal Pore Characteristic

(48) (1) Presence or Absence of Pores

(49) For the insulating films and the insulating layer contained in the semiconductor package obtained in Examples 1 to 8 and Comparative Examples 1 to 4, nondestructive testing was conducted according to a SAT (Scanning Acoustic Tomography) method using SONIX Quantum 350 Scanning Acoustic Microscopy equipment, and the presence or absence of pores was evaluated according to the following criteria.

(50) OK: Absence of pores

(51) NG: Presence of pores

(52) (2) Pore Diameter

(53) For the insulating layers contained in the insulating films and the semiconductor packages obtained in Examples 1 to 8 and Comparative Examples 1 to 4, the average diameter of inner pores was measured through an FE-SEM (Hitachi, S-4800), and the results are shown in Table 1 below. The average diameter of the pores was obtained by finding the maximum diameter of each of the plurality of pores and then calculating the average value thereof.

(54) 3. Evaluation of Heat Resistance Reliability

(55) The semiconductor package specimens obtained in Examples 1 to 8 and Comparative Examples 1 to 4 were allowed to stand in a pressure cooker test chamber at 146° C. and 100% RH for 24 hours, and then taken out to remove moisture on the surface. The test sample was made to float in a lead bath set at 288° C. with its film side facing upward. The appearance of the test sample was examined to determine whether the film was peeled or deformed, and the heat resistance reliability was evaluated.

(56) OK: No bursting at 288° C. solder floating

(57) NG: Bursting at 288° C. solder floating

(58) The measurement results of Experimental Examples 2 to 3 are shown in Table 1 below.

(59) TABLE-US-00001 TABLE 1 Measurement results of Experimental Examples 2 and 3 Presence or absence of pores/Pore average diameter(unit: μm) Insulating layer contained in semi- Insulating film conductor package (before applying (after applying Category magnetic field) magnetic field) Reliability Example 1 NG/2.4 OK OK Example 2 NG/2.7 OK OK Example 3 NG/3.4 OK OK Example 4 NG/2.4 OK OK Example 5 NG/2.1  NG/0.65 OK Example 6 NG/2.6 OK OK Example 7 NG/3.8 OK OK Example 8 NG/1.8 OK OK Comparative NG/2.7 NG/2.5 NG Example 1 Comparative NG/1.4 NG/1.5 NG Example 2 Comparative NG/2.9 NG/2.5 NG Example 3 Comparative NG/1.6 NG/1.5 NG Example 4

(60) As shown in Table 1, it was confirmed that in the manufacturing method of the insulating layers of Examples 1 to 8, as a magnetic field of 0.5 T to 0.6 T was applied during the production of the film from a composition containing 30 wt % to 90 wt % of a metal grafting porous structure, all pores were removed after applying the magnetic field, or the average diameter of the remaining pores became very low at the level of 0.65 μm, and thus the decrease in reliability due to pore could be minimized.

(61) On the other hand, when the magnetic field intensity was lowered to 0.04 T as in Comparative Example 1 and Comparative Example 3, the average diameter of the pores remaining after applying magnetic field was 2.5 μm, which was higher than that of the examples. As the volume ratio of the pores was relatively increased, the result of the reliability evaluation of the insulating layer was very poor.

(62) In addition, when the content of the grafting porous structure was lowered to 18.5% by weight as in Comparative Example 2 and Comparative Example 4, the average diameter of the pores remaining after applying the magnetic field was 1.5 μm, which was higher than that of the examples. As the volume ratio of the pores was relatively increased, the result of the reliability evaluation of the insulating layer was very poor.