CORIOLIS FLOWSENSOR
20190056254 ยท 2019-02-21
Inventors
- Joost Conrad Lotters (Ruurlo, NL)
- Jarno GROENESTEIJN (Ruurlo, NL)
- Remco Gerardus Petrus Sanders (Ruurlo, NL)
- Remco John WIEGERINK (Ruurlo, NL)
Cpc classification
International classification
Abstract
The invention relates to a Coriolis flow sensor, comprising at least a Coriolis-tube, wherein the flow sensor comprises excitation means for causing the tube to oscillate, as well as detection means for detecting at least a measure of displacements of parts of the tube during operation. According to the invention, the detection means comprise two detection elements that are positioned on both sides of the Coriolis tube, wherein the detection elements partly overlap each other.
Claims
1. Coriolis flow sensor, comprising: a Coriolis tube (3); excitation means (9, 9, 10) for oscillating said tube about an excitation axis (29), wherein the Coriolis tube comprises a measuring tube part (124, 124) that extends transversely with respect to the excitation axis (29); as well as detection means (112, 112) for detecting, in use, at least a measure for movements of part of the Coriolis tube (3), wherein the detection means comprise two detection elements (112, 112) that are positioned on opposite sides of the measuring tube part (124), partly overlapping the excitation axis (29), wherein the detection elements (112, 112), as seen in a direction parallel to the excitation axis (29), are provided behind each other and partly overlapping each other, and wherein at least one of the two detection elements (112, 112) is positioned asymmetrical with respect to the excitation axis (29).
2. Coriolis flow sensor according to any one of the previous claims, wherein the Coriolis tube (3) is substantially U-shaped.
3. Coriolis flow sensor according to claim 1 or 2, wherein each of the two detection elements (112, 112) is positioned asymmetrical with respect to the excitation axis (29).
4. Coriolis flow sensor according to any one of the previous claims, wherein the detection elements are read out electrodes (111, 113; 111, 113).
Description
[0021] The invention will be explained in more detail below, by way of example, with reference to the drawing in which:
[0022]
[0023]
[0024]
[0025]
[0026]
[0027]
[0028] Corresponding components have been given the same reference numerals as much as possible in the Figures.
[0029]
[0030]
[0031] The system chip 17 is (monolithically) assembled with two mutually opposed permanent magnets 9, 9 which are arranged on a carrier 5, for example a PCB (printed circuit board) of ceramic or synthetic resin material with copper tracks thereon. The substrate is manufactured from a <1,0,0> Si wafer mounted on the carrier 5. The electrical connections between the system chip 17 and the carrier 5 are provided by so-termed bonding wires arranged in groups 6, 7, and 8. The bonding wires 6 (from and to the sensor chip) serve for conditioning the chip temperature/c.q. temperature control. A local temperature sensor and an (ambient) pressure sensor 2 may be present, if so desired.
[0032] The pressure sensor 2, if present, measures the absolute pressure. This is important because the quality factor of the tube's vibration depends inter alia on the air pressure.
[0033] The bonding wires 7 serve for bringing the freely suspended tube 3 into vibration. The bonding wires 8 serve for controlling the read-out elements for the freely suspended tube.
[0034] The freely suspended tube 3 together with the rod magnets 9, 9, a current conductor (wire) 10 on the tube 3, and capacitive sensor elements 11 on the tube and 12 on the system chip 17 forms a so-termed Coriolis flowmeter, which is further clarified in
[0035] The hydraulic coupling of the system chip 17 to the external world is provided by pressure blocks 13 and 14 (
[0036]
[0037]
[0038] A housing may be provided around the entire assembly for protection; this is not shown.
[0039]
[0040] During operation, a medium enters at 21 and exits at 21. The mass flow of a medium is the mass that passes through a cross-section of the tube per second. If the mass is a self-contained quantity, the mass flow through the U-tube of
[0041] Therefore, the mass flow Q has the same (constant) modulus (or vector length) everywhere in the tube 3. However, Q points in the positive x-direction in tube portion 22 and in the negative x-direction in tube portion 26.
[0042] The following method shown in
[0043]
[0044] The detection elements 112, 112 extend substantially parallel to the measurement tube part 124, and thus extend in the plane defined by the Coriolis tube (x,y plane), mainly in y-direction. It can be seen that the detection elements 112, 112 are provided with an offset with respect to each other, in a direction mainly parallel to the measuring tube part 124 (i.e. the y-direction). The detection elements 112, 112 are both positioned asymmetrical with respect to the excitation axis 29. In the embodiment shown, one of the detection elements 112 is provided more to the right, and the other one of the detection elements 112 is provided more to the left.
[0045] With this positioning, the detection elements 112, 112 are positioned closer to the twist axis 29, such that the sensitivity to the excitation displacement (see top of
[0046] An example of a fabrication process suitable for producing a micromachined Coriolis flow sensor is described EP2078936 B1 in particular with respect to FIGS. 4a to 4j, and FIG. 5.
[0047] An alternative fabrication process may be as follows.
[0048] First, a 500 nm thick layer of LPCVD silicon-rich nitride (SiRN) is deposited on a 525 m thick silicon wafer. Rectangular etch slits 5 m long and 1.2 m wide are etched in the SiRN layer to define the outline of the channels and the channels are etched using a semi-isotropic SF6 plasma etch.
[0049] A thick layer of LPCVD tetraethyl orthosilicate (TEOS) is deposited to protect the channels during backside processing. The inlets and outlets of the sensor are then etched from the backside using the Bosch process.
[0050] The TEOS layer is removed and a thick (1.5 m) layer of LPCVD SiRN is deposited to form the channel wall and seal the etch slits. A 10/200 nm thick layer of chromium and gold is sputtered on top of the wafers and patterned to form the tracks and electrodes for actuation and read-out of the chip. The last step consists of an isotropic SF6 plasma etch step to remove the silicon around part of the channel, resulting in a free-hanging channel that can vibrate.