METHOD OF MAKING A TANTALUM SPUTTERING TARGET WITH INCREASED DEPOSITION RATE

Abstract

Methods of making Ta, Nb, and Ta/Nb sputter targets and targets produced thereby. The improved targets comprise a mixed {100}/{111} texture wherein the % volume of {100} texture is increased over prior art methods and a % volume {111} texture reduced compared to targets made by prior art methods. This results in increased film deposition rates upon sputtering of the improved targets. The methods for manufacturing the improved targets comprise a clock rolling step wherein less than 8% target reduction is achieved at rolling speeds of between about 30-40 rpm.

Claims

1. A method of making a BCC metal or BCC metal alloy target, said method comprising the following steps: a) providing a grain refined billet, with an average grain size of 250 m or less b) cutting a section of this billet to yield enough material for one target blank, and upset forging said blank with a height reduction of at least 50% c) clock rolling said target blank with a rolling reduction of less than 8% and a rolling speed between 30 and 40 rpm; and d) vacuum annealing said target blank within a temperature range of 850 C. to 1000 C.

2. The method as recited in claim 1, wherein said rolling reduction in step c) is between about 6 to about 8%.

3. The method as recited in claim 1, wherein said target has a volume fraction of {100} oriented grains of 0.300 or greater, and a volume fraction of {111} oriented grains of 0.325 or lower.

4. A BCC metal or BCC metal alloy sputtering target manufactured using the method recited in claim 1, having a deposition rate 15.000 angstroms/sec or higher.

5. The method as recited in claim 1, wherein said BCC metal is tantalum, wherein said tantalum has a purity 99.5% or greater, a C, O, N, H content of less than 50 ppm, and a grain structure that is at least 15% recrystallized.

6. The method as recited in claim 1, wherein said BCC metal is niobium, wherein said niobium has a purity 99.5% or greater, a C, O, N, H content of less than 50 ppm, and a grain structure that is at least 15% recrystallized.

7. The method as recited in claim 1, wherein said BCC metal is a tantalum-niobium alloy, wherein said tantalum-niobium alloy has a purity 99.5% or greater, a C, O, N, H content of less than 50 ppm, and a grain structure that is at least 15% recrystallized.

8. A thin film for semiconductor applications created by using the BCC metal or metal alloy sputtering target according to claim 1, where variation in film thickness uniformity through target life (percent non-uniformity) of said thin film is 3% or less.

9. A thin film for semiconductor application created by using the BCC metal or metal alloy sputtering target according to claim 1, where percent variation in film resistivity is 5% or less.

10. A sputter target composed of BCC metal or alloy, said target having an average grain size of 250 m or less, said target having a texture of oriented grain volume fraction of {100} greater than 0.300 wherein 1.00 equals 100% total grain volume.

11. The sputter target as recited in claim 10, wherein said target has a texture of oriented grain volume fraction of {111} less than 0.325 wherein 1.00 equals 100% total grain volume.

12. The sputter target as recited in claim 10, wherein said BCC metal or alloy is Ta having an oriented grain fraction of less than 0.325 wherein 1.00 equals 100% total grain volume.

13. The sputter target as recited in claim 12, wherein said oriented grain volume fraction {100} is greater than about 0.325 and wherein said oriented grain volume fraction {111} is less than about 0.300.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0014] FIG. 1 is a graph showing percent of sputtering non-uniform versus target life for target Ex. 1, a target made in accordance with the invention;

[0015] FIG. 2 is a graph showing percent variation in film resistivity versus target life for target Ex. 1;

[0016] FIG. 3 is a graph showing percent variation in film resistivity versus target life for target Ex. 1;

[0017] FIG. 4 is a graph showing volume fraction of {100} oriented grains versus new (the invention) and prior (prior art) methods;

[0018] FIG. 5 is a graph showing volume fraction of {111} oriented grains versus new (the invention) and prior (prior art) methods;

[0019] FIG. 6 is a graph showing volume fraction of {110} oriented grains versus new (the invention) and prior (prior art) methods; and

[0020] FIG. 7 are through texture EBSD texture maps of Ta plates processed using the prior art process and the process of the present invention. FIG. 7a shows the prior art process, characterized by a mixed {100}, {111}, and {110} texture at the outer edges of the plate, and a {111} texture band at mid thickness of the plate. FIG. 7b shows the present inventive process, characterized by an increased volume fraction of {100}, a decreased volume fraction of {111}, and a reduced {111} texture band at mid thickness of the plate.

DETAILED DESCRIPTION

[0021] The starting tantalum material is a grain refined tantalum billet with an average grain size 250 m or less. A section of this billet is sawed to yield enough material for one target blank. The target blank is upset forged, to yield a height reduction at least 50% or greater. After the upset forged step the target blank is clock rolled using rolling reductions 8% or less, with the target rolling reduction of 6%, and a rolling speed of 36 RPM. The resulting target blank is subjected to a recrystallization vacuum anneal, between 850 C. and 1000 C., to achieve a recrystallization rate 15% or greater. The lower rolling reduction, rolling speed of 36 RPM and lower final anneal temperature compared to prior methods results in a tantalum blank characterized by an increased volume fraction of {100}, and a decreased volume fraction {111}. The combination of an increased volume fraction of {100} oriented grains and a decreased volume fraction of {111} oriented grains, leads to an increased overall deposition rate.

[0022] Table 1 shows the metallurgical and sputtering data from two tantalum targets, one manufactured using the prior method, one manufactured using the new method. As shown in Table 1, the volume fraction of {100} planes increased from 0.228 when manufacturing using the prior method, to 0.301 when manufacturing using the new method. The volume fraction of {111} planes decreased from 0.389 when manufacturing using the prior method, to 0.321 when manufacturing using the new method. The average deposition rate through target life increased from 6.600 angstroms/second when manufacturing using the prior method to 18.39 angstroms/second when manufacturing using the new method.

TABLE-US-00001 TABLE 1 Processing, metallurgical, and sputtering data from targets C-1 and Ex. 1 manufactured using the prior and new processes respectively. Average Grain Target Lot Rolling Size (m) Volume Fraction Average Deposition Number Method Reduction Surface Half {100} {111} {110} Rate (Angstroms/sec) C-1 104 Prior 10.10% 69.7 66 0.228 0.389 0.035 6.600 Ex. 1 119 New 6.03% 53.9 57.5 0.301 0.321 0.031 18.359

[0023] As FIGS. 1, 2, and 3 show, target Ex.1 manufactured using the new method, exhibits excellent thin film characteristics. The percent non-uniformity was below 3% through target life and the percent variation in film resistivity within wafers and between wafers was below 5% through target life.

[0024] Table 2 shows the metallurgical data from three targets manufactured using the prior method, and three targets manufactured using the new method. Sputtering data was not gathered for these targets. FIGS. 4, 5, and 6 plot the volume fraction of {100}, {111}, and {110} oriented grains comparing the prior method and new method. It is clear that the new method increases, the volume fraction of {100} oriented grains, and decreases the volume fraction of {111} oriented grains. The volume fraction of {110} oriented grains appears to not be affected. The benefit of a sputtering target with an increased deposition rate is improved step coverage when depositing thin films.

TABLE-US-00002 TABLE 2 Processing, metallurgical, and sputtering data from targets manufactured using the prior and new processes. Grain Target Lot Average Rolling Size (m Volume Fraction Number Method Reduction Surface Half {100} {111} {110} C-2 118 Prior 12.50% 46.5 50.7 0.267 0.362 0.032 C-1 104 Prior 12.50% 52.9 47.2 0.216 0.324 0.053 C-3 101 Prior 12.50% 63.2 67.6 0.177 0.393 0.052 Ex. 2 109 New 6.03% 47.4 64.4 0.374 0.248 0.027 Ex. 1 119 New 6.03% 18.7 29.1 0.337 0.295 0.03 Ex. 3 105 New 6.13% 39.3 38.5 0.423 0.254 0.024

[0025] While the present invention has been described with respect to specific examples, it is apparent that numerous other forms and modifications of the invention will be obvious to those skilled in the art. The appended claims and this invention should be construed to cover all such obvious forms and modifications which are within the spirit and scope of the present invention.