GRAPHITE POT AND MANUFACTURING METHOD THEREOF

Abstract

The present disclosure provides a graphite pot and a manufacturing method thereof. The graphite pot comprises a pot body made of graphite, the pot body comprising an inner wall and an outer wall, and a hard carbon film or a covalent carbide film attached to the surface of the inner wall. A hard carbon film or a covalent carbide film is attached to the surface of the inner wall of the pot body, and the hardness of the hard carbon film and the hardness of the covalent carbide film are both higher than that of the existing PTFE resin film layer, and the carbon film and the covalent carbide film have superior air permeability. When in use, the far infrared characteristic and the adsorption property of the graphite pot body are fully exerted, which is very environment-friendly and healthy.

Claims

1. A graphite pot, comprising a pot body made of graphite, the pot body comprising an inner wall and an outer wall, and a hard carbon film attached to at least the inner wall.

2. The graphite pot according to claim 1, wherein a non-stick coating is attached to the surface of the hard carbon film.

3. The graphite pot according to claim 1, wherein a non-stick coating or a hard carbon film is attached to the outer wall.

4. The graphite pot according to claim 1, wherein the thickness of the hard carbon film ranges from 1.0 m to 50 m.

5. A graphite pot, comprising a pot body made of graphite, the pot body comprising an inner wall and an outer wall, and a covalent carbide film attached to at least the inner wall.

6. The graphite pot according to claim 5, wherein a non-stick coating is attached to the surface of the covalent carbide film.

7. The graphite pot according to claim 5, wherein a non-stick coating or a covalent carbide film is attached to the outer wall.

8. The graphite pot according to claim 5, wherein the thickness of the covalent carbide film ranges from 1.0 m to 5.0 m.

9. The graphite pot according to claim 5, wherein the covalent carbide film is a silicon carbide film, a boron carbide film or a titanium carbide film.

10. A method for manufacturing a graphite pot, comprising the steps of: molding graphite into a pot body; and subjecting the pot body to a coating treatment via chemical vapor deposition or to a coating treatment via physical vapor deposition to form a hard carbon film on a surface of the pot body.

11. The method for manufacturing a graphite pot according to claim 10, wherein the specific operations of the coating treatment via chemical vapor deposition are: placing the baked pot body into a coating chamber, and closing and vacuumizing the coating chamber; and controlling an air pressure P.sub.1 in the coating chamber, a recovery pressure P.sub.2, glow bar power P.sub.3, an argon flow rate Q.sub.1, a hydrogen flow rate Q.sub.2 and a methane flow rate Q.sub.3, base material temperature T.sub.1 of the pot body and deposition time t.sub.1, and performing coating of the pot body via chemical vapor deposition.

12. The method for manufacturing a graphite pot according to claim 11, wherein the air pressure P.sub.1, the recovery pressure P.sub.2, the glow bar power P.sub.3, the argon flow rate Q.sub.1, the hydrogen flow rate Q.sub.2, the methane flow rate Q.sub.3, the base material temperature T.sub.1 of the pot body and the deposition time t.sub.1 satisfy the following relations: P.sub.1 ranges from 0.5 kpa to 7 kpa, P.sub.2 ranges from 50 kpa to 150 kpa, P.sub.3 ranges from 2 kw to 20 kw, Q.sub.1 ranges from 1 SLM to 10 SLM, Q.sub.2 ranges from 0.5 SLM to 4.5 SLM, Q.sub.3 ranges from 0.02 SLM to 0.6 SLM, T.sub.1 ranges from 850 C. to 930 C., and t.sub.1 ranges from 1 hour to 12 hours.

13. The method for manufacturing a graphite pot according to claim 10, wherein the specific operations of the coating treatment via physical vapor deposition are: placing the baked pot body into a coating chamber, and closing and vacuumizing the coating chamber; and controlling a background pressure P.sub.4 in the coating chamber, a film-forming pressure P.sub.5, a sputtering power P.sub.6, a bias voltage Vbias, an argon flow rate Q.sub.4, a methane or acetylene flow rate Q.sub.5, base material temperature T.sub.2 of the pot body and deposition time t.sub.2, and performing coating of the pot body via physical vapor deposition.

14. The method for manufacturing a graphite pot according to claim 13, wherein the background pressure P.sub.4, the film-forming pressure P.sub.5, the sputtering power P.sub.6, the bias voltage Vbias, the argon flow rate Q.sub.4, and the methane or acetylene flow rate Q.sub.5, the base material temperature T.sub.2 of the pot body and the deposition time t.sub.2 satisfy the following relations: P.sub.4 ranges from 0.510.sup.2 Pa to 0.510.sup.3 Pa, P.sub.5 ranges from 2.010.sup.2 Pa to 8.010.sup.1 Pa, P.sub.6 ranges from 10 kw to 20 kw, Vbias ranges from 100V to 300V, Q.sub.4 ranges from 0.2 SLM to 0.7 SLM, Q.sub.5 ranges from 0.10 SLM to 2.0 SLM, T.sub.2 ranges from 130 C. to 200 C., and t.sub.2 ranges from 3 hours to 5 hours.

15. The method for manufacturing a graphite pot according to claim 10, further comprising the steps of: subjecting the pot body to a coating treatment via physical vapor deposition to form a covalent carbide film on a surface of the pot body.

16. The method for manufacturing a graphite pot according to claim 15, wherein the coating treatment via physical vapor deposition is sputtering.

17. The method for manufacturing a graphite pot according to claim 16, wherein the specific operations of the sputtering are: placing the baked pot body into a coating chamber, and closing and vacuumizing the coating chamber; and controlling a deposition pressure P.sub.1 in the coating chamber, a sputtering target material, a sputtering power P.sub.2, an argon flow rate Q.sub.1, and an acetylene flow rate Q.sub.2, base material temperature T.sub.1 and deposition time t.sub.1, and performing sputtering of the pot body.

18. The method for manufacturing a graphite pot according to claim 17, wherein the deposition pressure P.sub.1, the sputtering target material, the sputtering power P.sub.2, the argon flow rate Q.sub.1, the acetylene flow rate Q.sub.2, the base material temperature T.sub.1 and the deposition time t.sub.1 satisfy the following relations: P.sub.1 ranges from 0.510.sup.1 Pa to 5.010.sup.1 Pa, the sputtering target material is silicon, boron or titanium, P.sub.2 ranges from 5 kw to 20 kw, Q.sub.1 ranges from 0.05 SLM to 3.0 SLM, Q.sub.2 ranges from 0.04 SLM to 0.10 SLM, T.sub.1 ranges from 110 C. to 130 C., and t.sub.1 ranges from 1.5 hours to 4 hours.

Description

BRIEF DESCRIPTION OF DRAWINGS

[0056] FIG. 1 is a structural diagram of embodiment 1 of a graphite pot of the present disclosure;

[0057] FIG. 2 is a structural diagram of embodiment 2 of the graphite pot of the present disclosure;

[0058] FIG. 3 is a structural diagram of embodiment 3 of the graphite pot of the present disclosure;

[0059] FIG. 4 is a structural diagram of embodiment 4 of the graphite pot of the present disclosure;

[0060] FIG. 5 is a structural diagram of embodiment 5 of the graphite pot of the present disclosure;

[0061] FIG. 6 is a structural diagram of embodiment 6 of the graphite pot of the present disclosure;

[0062] FIG. 7 is a flow chart of a method for manufacturing a graphite pot of the present disclosure; and

[0063] FIG. 8 is another flow chart of the method for manufacturing a graphite pot of the present disclosure.

[0064] In FIGS. 1-6, the corresponding relation between the reference signs and the components is:

[0065] 01: pot body, 011: inner wall, 012: outer wall, 02: hard carbon film, 03: non-stick coating, and 04: covalent carbide film.

DETAILED DESCRIPTION OF EMBODIMENTS

[0066] Below, the present disclosure is further described in connection with embodiments with reference to the figures.

[0067] The structural diagram of embodiment 1 of a graphite pot of the present disclosure is shown in FIG. 1, which comprises a pot body 01 made of graphite, the pot body 01 comprising an inner wall 011 and an outer wall 012, a hard carbon film 02 attached to the surface of the inner wall 011 and the surface of the outer wall 012, respectively; and the thickness of the hard carbon film 02 being 20 m.

[0068] A hard carbon film is attached to the surface of the inner wall of the pot body, and the hardness of the hard carbon film is higher than that of the existing Polytetrafluoroethylene (PTFE) resin film layer, which ensures the wear resistance of the graphite pot, and the carbon film itself has superior air permeability, which gives full play to the properties of high thermal conductivity, rapid heat transfer and being heated evenly of the graphite pot body; in the using process, the far infrared characteristic and the adsorption property of the graphite pot body are fully exerted, which is very environment-friendly and healthy; and the carbon film having a thickness of 20 m enables the graphite pot to have the best performance.

[0069] In a particular embodiment, the thickness of the carbon film may be set to any other value between 1.0 and 50 m.

[0070] The structural diagram of embodiment 2 of the graphite pot of the present disclosure is shown in FIG. 2, and embodiment 2 is distinguished from embodiment 1 in that a non-stick coating 03 is attached to the surface of the hard carbon film 02.

[0071] Further attachment of a non-stick coating to the surface of the hard carbon film improves the non-adhesive property of the graphite pot. Furthermore, since the hard carbon film is the bottom layer of the non-stick coating, the whole coating of the graphite pot is relatively thin, which does not affect the properties of the graphite pot.

[0072] The structural diagram of embodiment 3 of the graphite pot of the present disclosure is shown in FIG. 3, and embodiment 3 is distinguished from embodiment 1 in that a non-stick coating 03 is attached to the surface of the outer wall 012.

[0073] The attachment of a non-stick coating to the surface of the outer wall improves the wear resistance of the outer wall of the graphite pot.

[0074] The structural diagram of embodiment 4 of the graphite pot of the present disclosure is shown in FIG. 4, which comprises a pot body 01 made of graphite, the pot body 01 comprising an inner wall 011 and an outer wall 012, a covalent carbide film 04 attached to the surface of the inner wall 011 and the surface of the outer wall 012, respectively, wherein the covalent carbide film 04 is a silicon carbide film, and the thickness of the silicon carbide film is 3.0 m.

[0075] A covalent carbide film, i.e., a silicon carbide film, is attached to the surface of the inner wall. Because the hardness of the silicon carbide film is far higher than that of the existing PTFE resin film layer, the film layer may be worn through only after tens of thousands of times of use, which ensures the wear resistance of the graphite pot and prolongs the service life of the graphite pot. Moreover, the silicon carbide film itself has superior air permeability, which ensures the properties of high thermal conductivity, rapid heat transfer and being heated evenly of the graphite pot body; and the silicon carbide film having a thickness of 3.0 m enables the graphite pot to have the best performance. The attachment of a covalent carbide film to the surface of the outer wall ensures the wear resistance of the graphite pot itself without affecting the properties of the graphite pot.

[0076] The structural diagram of embodiment 5 of the graphite pot of the present disclosure is shown in FIG. 5, and embodiment 5 is distinguished from embodiment 4 in that a non-stick coating 03 is attached to the surface of the covalent carbide film 04.

[0077] Further attachment of a non-stick coating to the surface of the covalent carbide film improves the non-adhesive property of the graphite pot. Furthermore, since the covalent carbide film is the bottom layer of the non-stick coating, the whole coating of the graphite pot is relatively thin, which does not affect the performance of the graphite pot.

[0078] The structural diagram of embodiment 6 of the graphite pot of the present disclosure is shown in FIG. 6, and embodiment 6 is distinguished from embodiment 4 in that a non-stick coating 03 is attached to the surface of the outer wall 012.

[0079] The attachment of a non-stick coating to the surface of the outer wall improves the wear resistance of the outer wall of the graphite pot

[0080] In a particular embodiment, the thickness of the covalent carbide film may be set to any other value between 1.0 and 5.0 m.

[0081] In a particular embodiment, the covalent carbide film 04 is a silicon carbide film, a boron carbide film or a titanium carbide film, or any other covalent carbide film.

[0082] A flow chart of a method for manufacturing a graphite pot of the present disclosure is shown in FIG. 7, which method comprises the steps of:

[0083] step 702, molding graphite into a pot body,

[0084] wherein the specific operations of step 702 are as follows: [0085] forming graphite into a pot body using computer numerical control (CNC) milling, after compression-molding of graphite; [0086] placing the pot body in an ultrasonic cleaning container for ultrasonic cleaning, wherein the conditions of the ultrasonic cleaning are that: [0087] the cleaning temperature is 50 C.-60 C., the cleaning time is 5 min-10 min, and the power of the ultrasonic cleaning equipment is selected according to the actual product conditions to ensure that the output power density of the ultrasonic cleaning machine is mostly selected to be 0.3-0.6 W/cm.sup.2; [0088] placing the cleaned pot body in an oven for baking, wherein the baking conditions are: [0089] the baking temperature is 110 C.-120 C., and the baking time is 15 min-30 min; [0090] step 704, subjecting the molded pot body to a coating treatment via chemical vapor deposition or to a coating treatment via physical vapor deposition to form a hard carbon film on a surface of the pot body.

[0091] Forming a hard carbon film by a coating treatment via chemical vapor deposition or by a coating treatment via physical vapor deposition ensures superior attachment of the hard carbon film to the pot body.

[0092] In a specific embodiment, after step 704, the method can further comprise the step of subjecting the pot body, after the treatment of carbon film coating, to the treatment of cleaning. Subjecting the pot body, after the treatment of carbon film coating, to the treatment of cleaning ensures the cleanliness of the surface of the graphite pot, and ensures that the graphite pot can be directly used.

[0093] The specific operations of the coating treatment via chemical vapor deposition in step 704 are:

[0094] placing the baked pot body into a coating chamber, and closing and vacuumizing the coating chamber; and

[0095] controlling an air pressure P.sub.1 in the coating chamber, a recovery pressure P.sub.2, a glow bar power P.sub.3, an argon flow rate Q.sub.1, a hydrogen flow rate Q.sub.2, a methane flow rate Q.sub.3, base material temperature T.sub.1 of the pot body and deposition time t.sub.1, and performing coating of the pot body via chemical vapor deposition. The control ranges of the parameters are shown below in table 1.

TABLE-US-00001 TABLE 1 Parameter Control Table of Coating Via Chemical Vapor Deposition gas flow rate (SLM) P.sub.1(KPa) P.sub.2(KPa) P (kw) Q.sub.1 Q.sub.2 Q.sub.3 T.sub.1 ( C.) t.sub.1(h) 0.5-7 50-150 2-20 1-10 0.5-4.5 0.02-0.6 850-930 1-12

[0096] In a specific embodiment, the air pressure P.sub.1 in the coating chamber, the recovery pressure P.sub.2, the glow bar power P.sub.3, the argon flow rate Q.sub.1, the hydrogen flow rate Q.sub.2, the methane flow rate Q.sub.3, the base material temperature T.sub.1 of the pot body and the deposition time t.sub.1, and the coating thickness of the carbon film are shown below in table 2.

TABLE-US-00002 TABLE 2 Parameters and Coating Thickness of Coating Via Chemical Vapor Deposition gas flow rate thickness of P.sub.1 P.sub.2 P.sub.3 (SLM) T.sub.1 t.sub.1 carbon film (KPa) (KPa) (kw) Q.sub.1 Q.sub.2 Q.sub.3 ( C.) (h) (m) 1 60 10 3 1.5 0.05 870 3 10 3 80 12 4 2.0 0.15 890 5 15 5 100 14 5 2.5 0.30 910 7 25 7 120 16 7 3.0 0.45 930 9 35

[0097] The deposition film-forming device of chemical vapor deposition is relatively simple, and allows for easy control of the density of the film layer and the purity of the film layer, which ensures the quality of the carbon film. Moreover, the thickness of the carbon film can be controlled to be 10 m-50 m.

[0098] The specific operations of the coating treatment via physical vapor deposition are as follows: placing the baked pot body into a coating chamber, and closing and vacuumizing the coating chamber; controlling a background pressure P.sub.4 in the coating chamber, a film-forming pressure P.sub.5, a sputtering power P.sub.6, a bias voltage Vbias, an argon flow rate Q.sub.4, a methane or acetylene flow rate Q.sub.5, base material temperature T.sub.2 of the pot body and deposition time t.sub.2, and performing coating treatment on the pot body via physical vapor deposition. The control ranges of the parameters are shown below in table 3.

TABLE-US-00003 TABLE 3 Parameter Control Table of Coating Via Physical Vapor Deposition bias gas flow rate P.sub.4 P.sub.5 P.sub.6 voltage (SLM) T.sub.2 t.sub.2 (Pa) (Pa) (kw) Vbias (V) Q.sub.4 Q.sub.5 ( C.) (h) 0.5 10.sup.2- 2.0 10.sup.2- 10- 100- 0.2- 0.10- 130- 3- 0.05 10.sup.2 8.0 10.sup.1 20 300 0.7 2.0 200 5

[0099] In a specific embodiment, the background pressure P.sub.4, the film-forming pressure P.sub.5, the sputtering power P.sub.6, the bias voltage Vbias, the argon (Ar) flow rate Q.sub.4, the methane or C.sub.2H.sub.2 flow rate Q.sub.5, the base material temperature T.sub.2 and the deposition time t.sub.2, and the coating thickness of the carbon film are shown below in table 4.

TABLE-US-00004 TABLE 4 Parameters and Coating Thickness of Coating Via Physical Vapor Deposition bias gas flow rate thickness of P.sub.4 P.sub.5 P.sub.6 voltage (SLM) T.sub.2 t.sub.2 carbon film (Pa) (Pa) (kw) Vbias (V) Q.sub.4 Q.sub.5 ( C.) (h) (m) 1.0 3.0 12 150 0.3 0.12 150 2 1.0 10.sup.2 10.sup.1 5.0 4.0 15 200 0.4 0.15 165 3 3.0 10.sup.3 10.sup.1 1.0 6.0 18 250 0.5 0.18 180 4 5.0 10.sup.3 10.sup.1

[0100] For the physical vapor deposition, it is free of pollution and material-saving, the film formed thereby is uniform and compact and has a strong ability to bond with a base, and self-lubrication of the surface of the carbon film is improved; moreover, the thickness of the carbon film can be controlled between 1.0 m and 10 m.

[0101] Another flow chart of the method for manufacturing a graphite pot of the present disclosure is shown in FIG. 8, which method comprises the steps of:

[0102] step 802, molding graphite into a pot body,

[0103] wherein the specific operations of step 802 are as follows: [0104] forming graphite into a pot body using CNC milling, after compression-molding of graphite; [0105] placing the pot body in an ultrasonic cleaning container for ultrasonic cleaning, wherein the conditions of the ultrasonic cleaning are: [0106] the cleaning temperature is 50 C.-60 C., the cleaning time is 5 min-10 min, and the power of the ultrasonic cleaning equipment is selected according to the actual product conditions to ensure that the output power density of the ultrasonic cleaning machine is mostly selected to be 0.3-0.6 W/cm.sup.2; [0107] placing the cleaned pot body in an oven for baking, wherein the baking conditions are: [0108] the baking temperature is 110 C.-120 C., and the baking time is 15 min-30 min; [0109] step 804, subjecting the molded pot body to a coating treatment via physical vapor deposition to form a covalent carbide film on a surface of the pot body.

[0110] Forming a covalent carbide film on the pot body by the treatment of coating a covalent carbide film ensures superior attachment of the covalent carbide film to the pot body; moreover, the covalent carbide film also has relatively high hardness.

[0111] In a specific embodiment, after step 804, the method further comprises a cleaning step, i.e., subjecting the pot body, after the treatment of covalent carbide film coating, to the treatment of cleaning. Subjecting the pot body, after the treatment of covalent carbide film coating, to the treatment of cleaning ensures the cleanliness of the surface of the graphite pot, and ensures that the graphite pot can be directly used.

[0112] In a specific embodiment, the coating treatment via physical vapor deposition is sputtering.

[0113] The specific operations of the sputtering are as follows:

[0114] placing the baked pot body into a coating chamber, and closing and vacuumizing the coating chamber; and

[0115] controlling a deposition pressure P.sub.1 in the coating chamber, a sputtering target material, a sputtering power P.sub.2, an argon flow rate Q.sub.1, an acetylene flow rate Q.sub.2, base material temperature T.sub.1 and deposition time t.sub.1, and performing sputtering of the pot body. The parameter control of the sputtering method is shown below in table 5.

TABLE-US-00005 TABLE 5 Parameter Control Table of Sputtering P.sub.1 target P.sub.2 gas flow rate (SLM) T.sub.1 t.sub.1 (Pa) material (kw) Q.sub.1 Q.sub.2 ( C.) (h) 0.5 10.sup.1- Si 5-20 0.05-3.0 0.04-1.0 110-130 1.5-4 5.0 10.sup.1

[0116] In a specific embodiment, the deposition pressure P.sub.1, the sputtering target material, the sputtering power P.sub.2, the argon (Ar) flow rate Q.sub.1, the acetylene (C.sub.2H.sub.2) flow rate Q.sub.2, the base material temperature T.sub.1 and the deposition time t.sub.1, and the coating thickness and the wear resistance of the SiC film are shown below in table 6.

TABLE-US-00006 TABLE 6 Parameter Control, Coating Thickness and Wear Resistance of Sputtering wear Thickness resistance P.sub.1 target P.sub.2 gas flow rate (SLM) T.sub.1 t.sub.1 of Si film hardness (ten thousand (Pa) material (kw) Q.sub.1 Q.sub.2 ( C.) (h) (m) (Hv) times) 1 10.sup.1 Si 10 0.1 0.05 120 2-3 10 11 1 2 10.sup.1 12 0.15 0.06 120 2-3 15 16 1 3 10.sup.1 14 0.2 0.07 120 2.5-3.5 25 26 1.2 4 10.sup.1 16 0.25 0.08 120 3.0-3.5 35 36 1.3

[0117] The SiC film treated by sputtering has the advantages of strong adhesive force, high throwing power, wide matching between the coated base materials and the coating materials, etc.; moreover, the thickness of the SiC film can be controlled to be 1.0 m-5.0 m.

[0118] In the description of the present disclosure, it is to be understood that the orientation or position relation denoted by the terms such as center, length, width, upper, lower, vertical, horizontal, top, bottom and inner is based on the orientation or position relation indicated by the figures, which only serves to facilitate describing the present disclosure and simplify the description, rather than indicating or suggesting that the device or element referred to must have a particular orientation, and is constructed and operated in a particular orientation, and therefore cannot be construed as a limitation on the present disclosure.

[0119] In the present disclosure, unless otherwise explicitly specified and defined, the terms such as install, link, connect and fix shall be understood in broad sense, which may, for example, refer to fixed connection, detachable connection or integral connection; may refer to direct connection or indirect connection by means of an intermediate medium; and may refer to communication between two elements, or interaction between two elements. A person of ordinary skills in the art could understand the specific meaning of the terms in the present disclosure according to specific situations.

[0120] In the present disclosure, unless otherwise explicitly specified and defined, the first feature being on or under the second feature may include the first feature and the second feature being in direct contact, or the first feature and the second feature being not in direct contact, but in contact with each other through another feature therebetween. Also, the first feature being on, above or over the second feature includes the first feature being right above or not right above the second feature, or merely means the level of the first feature being higher than that of the second feature. The first feature being under, below or beneath the second feature includes the first feature being directly below or not directly below the second feature, or merely means the level of the first feature being lower than that of the second feature.

[0121] The graphite pot of the present disclosure and the manufacturing method thereof are described in detail above, and the principle and the implementation modes of the present disclosure are set forth herein with specific examples. The above descriptions of the embodiments are only used to help understand the core idea of the present disclosure; and for a person of ordinary skills in the art, based on the idea of the present disclosure, the present disclosure may have variations on the aspects of the specific implementation modes and the application scope. In conclusion, the contents in this description shall not be construed as limiting the present disclosure.