HIGH-CONDUCTIVITY AND HIGH-VOLTAGE SOLAR PHOTOVOLTAIC GLASS PANEL

Abstract

A high-conductivity and high-voltage solar photovoltaic glass panel includes two glass substrates. A surface of each of the two glass substrates faces air. A conductive paste, printed on the surface of the glass substrate, is baked, heated, and cooled to form a conductive circuit fused with the surface of the glass substrate. A solar chip with two electrodes, respectively located on both sides of the solar chip, is clamped between the two glass substrates, and the two electrodes of the solar chip are respectively connected with two solder pads of the two conductive circuits of the two glass substrates through two tin layers. A sealant is placed between the edges of the two glass substrates. The glass substrate is a glass-tempered substrate, and a surface of the conductive circuit, except a region reserved for a solder pad used for welding the solar chip, is covered with a printed-circuit-board (PCB) organic solder-resistant layer. The high-conductivity and high-voltage solar photovoltaic glass panel has the characteristics of high-conductivity and high light transmittance and has the characteristic of good thermal conductivity in high-power applications. The high-conductivity and high-voltage solar photovoltaic glass panel can he applied to the use of large-area light transmission, such as t the agricultural shed roofs.

Claims

1. A high-conductivity and high-voltage solar photovoltaic glass panel comprising: two glass substrates, wherein a surface of each of the two glass substrates faces air, and a conductive paste, printed on the surface of the glass substrate, is baked, heated, and cooled to form a conductive circuit fused with the surface of the glass substrate; wherein the conductive circuit is made essentially of a graphene layer or a conductive layer having a graphene upper portion and a metal lower portion fused with the glass substrate, and a surface of the graphene upper portion is fused with a surface of the metal lower portion; wherein a solar chip with two electrodes, respectively located on both sides of the solar chip, is clamped between the two glass substrates, the two electrodes of the solar chip are respectively connected with two solder pads of the two conductive circuits of the two glass substrates through two tin layers, and a sealant is placed between the edges of the two glass substrates; wherein the glass substrate is a glass-tempered substrate, and a surface of the conductive circuit, except a region reserved for a solder pad used for welding the solar chip, is covered with a printed-circuit-board (PCB) organic solder-resistant layer; wherein the conductive paste includes conductive powder, low temperature glass powder, ethyl cellulose, terpineol, and dibutyl maleate at a mass ratio of 65 to 75:3:5 to 10:10 to 20:1 to 3, and the conductive powder is graphene powder or a mixture of metal powder and graphene powder; and wherein, when the conductive powder is the mixture of metal powder and graphene powder, the graphene powder accounts for 2% to 5% by mass of the conductive paste.

2. The high-conductivity and high-voltage solar photovoltaic glass panel of claim 1, wherein the surface of the glass substrate and an upper surface of the conductive circuit are at the same level.

3. The high-conductivity and high-voltage solar photovoltaic glass panel of claim 1, wherein a gap between the two glass substrates is less than 2 mm.

4. The high-conductivity and high-voltage solar photovoltaic glass panel of claim 1, wherein the surface of the glass substrate faces air, and the conductive paste, printed on the surface of the glass substrate, is baked at a temperature between 120 and 150 C. for 100 to 200 seconds, placed at a temperature between 550 and 600 C. for 300 to 360 seconds, then placed at a temperature between 710 and 730 C. for 120 to 220 seconds, and finally cooled to form the conductive circuit fused with the surface of the glass substrate.

Description

BRIEF DESCRIPTION OF DRAWINGS

[0020] FIG. 1 is a schematic view showing the structure of a high-conductivity and high-voltage solar photovoltaic glass panel according to the present invention.

[0021] FIG. 2 is a cross sectional view taken along line A-A of FIG. 1.

[0022] In the figures, numeral 1 represents glass substrate; numeral 2 represents conductive circuit; numeral 3 represents solder pad: numeral 4 represents tin layer; numeral 5 represents graphene upper portion; numeral 6 represents metal lower portion; numeral 7 represents solar chip; and numeral 8 represents sealant.

DETAILED DESCRIPTION OF THE EMBODIMENTS

[0023] The present invention will be further described below in conjunction with accompanying drawings and exemplary embodiments.

[0024] Please refer to FIGS. 1 to 2. The present invention provides a high-conductivity and high-voltage solar photovoltaic glass panel. The high-conductivity and high-voltage solar photovoltaic glass panel includes two glass substrates 1. A surface of each of the two glass substrates 1 faces air, i.e. the surface faces an air layer inside the high-conductivity and high-voltage solar photovoltaic glass panel. A conductive paste, printed on the surface of the glass substrate 1, is baked, heated, and cooled to form a conductive circuit 2 fused with the surface of the glass substrate 1. The conductive circuit 2 is a made essentially of a graphene layer or a conductive layer. The conductive layer has a graphene upper portion 5 and a metal lower portion 6 fused with the glass substrate 1, and a surface of the graphene upper portion 5 is fused with a surface of the metal lower portion 6. The surface of the glass substrate 1 and an upper surface of the conductive circuit 2 are at the same level. A solar chip 7 with two electrodes, respectively located on both sides of the solar chip 7, is clamped between the two glass substrates 1, and the two electrodes of the solar chip 7 are respectively connected with two solder pads 3 of the two conductive circuits 2 of the two glass substrates 1 through two tin layers 4. A sealant 8 is placed between the edges of the two glass substrates 1.

[0025] The surface of the glass substrate 1 and an upper surface of the conductive circuit 2 are at the same level.

[0026] A gap between the two glass substrates 1 is less than 2 mm.

[0027] The glass substrate 1 is a glass-tempered substrate.

[0028] The conductive paste includes conductive powder, low temperature glass powder, ethyl cellulose, terpineol, and dibutyl maleate. A mass ratio of conductive powder:low temperature glass powder:ethyl cellulose:terpineol:dibutyl maleate is 65 to 75:3:5 to 10:10 to 20:1 to 3. The conductive powder is graphene powder or a mixture of metal powder and graphene powder. When the conductive powder is the mixture of metal powder and graphene powder, the graphene powder accounts for 2% to 5% by mass of the conductive paste.

[0029] The surface of the glass substrate 1 faces air, and the conductive paste, printed on the surface of the glass substrate 1, is baked at a temperature between 120 and 150 C. for 100 to 200 seconds, placed at a temperature between 550 and 600 C. for 300 to 360 seconds, then placed at a temperature between 710 and 730 C. for 120 to 220 seconds, and finally cooled to form the conductive circuit 2 fused with the surface of the glass substrate 1.

[0030] The manufacturing process of the high-conductivity and high-voltage solar photovoltaic glass panel is described as follows:

[0031] Step (1): To manufacture a highly conductive transparent glass-based circuit board by the following steps:

[0032] Step (a) is to print the conductive paste on the surface of the glass substrate 1, wherein the surface of the glass substrate 1 faces air. The conductive paste includes conductive powder, low temperature glass powder, ethyl cellulose, terpineol, and dibutyl maleate. A mass ratio of conductive powder:low temperature glass powder:ethyl cellulose:terpineol:dibutyl maleate is 65 to 75:3: 5 to 10:10 to 20:1 to 3. The conductive powder is the graphene powder or the mixture of metal powder and graphene powder. When the conductive powder is the mixture of metal powder and graphene powder, the graphene powder accounts for 2% to 5% by mass of the conductive paste.

[0033] Step (b) is to bake the glass substrate 1, covered with the conductive paste, at a temperature between 120 and 150 C. for 100 to 200 seconds.

[0034] Step (c) is to place the glass substrate 1 at a temperature between 550 and 600 C. for 300 to 360 seconds, then to place at a temperature between 710 and 730 C. for 120 to 220 seconds, and finally to cool to room temperature to form the conductive circuit 2 distributed on the surface of the glass substrate 1 and fused with the surface of the glass substrate 1, wherein the conductive circuit 2 is to form a part of the glass substrate 1, and the glass substrate 1 is the glass-tempered substrate.

[0035] Step (2): To take the two highly conductive transparent glass-based circuit boards and to apply a low temperature solder paste along the conductive circuits 2 of the two highly conductive transparent glass-based circuit boards.

[0036] Step (3): To take the solar chip 7 with the two electrodes. A positive electrode and negative electrode are respectively located on the front side and the back side of the solar chip 7. The solar chip 7 is clamped between the two highly conductive transparent glass-based circuit boards, wherein the positive electrode of the solar chip 7 is contact with the low temperature solder paste coating on the conductive circuit 2 and the glass substrate 1 of the highly conductive transparent glass-based circuit board, and the negative electrode of the solar chip 7 is contact with the low temperature solder paste coating on the conductive circuit 2 and the glass substrate 1 of the other highly conductive transparent glass-based circuit board.

[0037] Step (4): To use a reflow soldering technique to heat the conductive circuit 2, so as to melt the low temperature solder paste.

[0038] Step (5): To seal the edges of the two highly conductive transparent glass-based circuit boards through a sealant 8.

[0039] The conductive circuit 2 of the present invention is totally fused with the glass substrate 1. If the high-conductivity and high-voltage solar photovoltaic glass panel is broken, the conductive circuit 2 is disconnected and no voltage is formed because of the glass substrate 1 being nonconductive. Thus, the high-conductivity and high-voltage solar photovoltaic glass panel can pass the safety regulations and is suitable for high-voltage and high-power applications, which only needs to convert direct current into alternating current and directly output the alternating current to the high-voltage power grid. The solar photovoltaic glass plate of the prior art is not easy to pass the safety regulations and can only be used at low voltage. If it is required to connect with a high-voltage power grid, it is necessary to convert the low voltage into the high-voltage alternating current. The solar chip 7 is welded on the highly conductive transparent glass-based circuit board with high light transmittance through the reflow soldering technique. After melting the low temperature solder paste, the low temperature solder paste is formed to be a tin layer 4. The solar chip 7 can be electrically connected with the conductive circuit 2 through the tin layer 4. Through the design of the solar chips and the layout of the conductive circuits, for example, the reduction of the area of the solar chip and the sparse arrangement of the solar chips, the high-conductivity and high-voltage solar photovoltaic glass panel also has high light transmittance, which can be applied to the use of large-area light transmission, such as t the agricultural shed roofs. The application of the high-conductivity and high-voltage solar photovoltaic glass panel is wider than that of the solar photovoltaic glass panel of the prior art.