OPTOELECTRONIC COMPONENT, SEMICONDUCTOR STRUCTURE AND METHOD

Abstract

A semiconductor structure comprises an n-doped first layer, a p-doped second layer doped with a first dopant, and an active layer disposed between the n-doped first layer and the p-doped second layer and having at least one quantum well. The active layer of the semiconductor structure is divided into a plurality of first optically active regions, at least one second region, and at least one third region. Here, the plurality of first optically active regions are arranged in a hexagonal pattern spaced apart from each other. The at least one quantum well in the active region comprises a larger band gap in the at least one second region than in the plurality of first optically active regions and the at least one third region, the band gap being modified, in particular, by quantum well intermixing. The at least one second region encloses the plurality of first optically active regions.

Claims

1-40. (canceled)

41. A method of manufacturing an optoelectronic device, in particular a light-emitting diode, comprising: providing a semiconductor structure comprising an n-doped layer, a p-doped layer, and an active layer disposed therebetween having at least one quantum well, wherein the p-doped layer comprises a first dopant; depositing and patterning of a mask on the semiconductor structure; and doping the p-doped layer with a second dopant, including Zn or Mg, so that quantum well intermixing is produced in regions of the active layer over which there is no region of patterned mask; wherein the doping of the p-doped layer with the second dopant is performed by a gas phase diffusion using a precursor with the second dopant and comprises: depositing the second dopant on a surface of the p-doped layer by decomposing the precursor at a first temperature selected such that substantially no diffusion of the second dopant occurs into the p-doped layer occurs; and diffusing the deposited second dopant into the p-doped layer at a second temperature higher than the first temperature.

42. The method of claim 41, wherein an amount of the deposited second dopant is selected such that it diffuses substantially completely into the p-doped layer during diffusion.

43. The method of claim 41, wherein an amount of the second dopant is selected such that, in regions of the active layer not covered by a region of the patterned mask, a lateral diffusion barrier of charge carriers created by the second dopant is greater than a barrier created by quantum well intermixing.

44. The method of claim 41, wherein the doping of the p-doped layer with the second dopant comprises annealing the semiconductor structure after diffusion of the second dopant into the p-doped layer at a third temperature higher than the second temperature.

45. The method of claim 44, wherein the mask is locally formed by a suitable layer of the semiconductor structure by patterning.

46. The method of claim 44, wherein the annealing comprises: providing a further precursor comprising an element from a fifth main group, including P or As; and/or depositing a layer of a III-V semiconductor material on the surface of the p-doped layer.

47. The method of claim 44, wherein, during the depositing, the diffusing, and the annealing, at least one parameter is selected differently, the at least one parameter comprising at least one of: a temperature change over a first defined period of time during one of the depositing, the diffusing, and the annealing; a pressure; a pressure change over a second defined period of time during one of the depositing, the diffusing, and the annealing; a composition of a gas; or a combination thereof.

48. A semiconductor structure, comprising: an n-doped layer; a p-doped layer doped with a first dopant; and an active layer disposed between the n-doped layer and the p-doped layer and having at least one quantum well, wherein the active layer of the semiconductor structure is divided into a plurality of first optically active regions, at least one second region, and at least one third region; wherein the plurality of first optically active regions are spaced apart in a hexagonal pattern; wherein the at least one quantum well in the active layer comprises a larger band gap in the at least one second region than in the plurality of first optically active regions and the at least one third region; wherein the larger band gap is modified by quantum well intermixing; wherein the at least one second region encloses the plurality of first optically active regions; and wherein the at least one third region is disposed in spaces between the plurality of first optically active regions.

49. The semiconductor structure of claim 48, wherein the at least one second region and the at least one third region comprise a plurality of second regions and a plurality of third regions, respectively, wherein at least one of the plurality of first optically active regions, the plurality of second regions, and each of the plurality of third regions are substantially circular in shape.

50. The semiconductor structure of claim 48, wherein the at least one second region comprises a plurality of second regions, wherein the plurality of second regions each concentrically surrounds one of the plurality of first optically active regions.

51. The semiconductor structure of claim 50, wherein the at least one third region comprises a plurality of third regions, wherein the plurality of third regions are arranged such that each of the plurality of third regions is located at a center of exactly three of the plurality of first optically active regions.

52. The semiconductor structure of claim 48, wherein the at least one second region and the at least one third region comprise a plurality of second regions and a plurality of third regions, respectively, wherein each of the plurality of third regions maps substantially to a shape of a deltoid curve formed by exactly three of the plurality of second regions, respectively, which are substantially circular in shape.

53. The semiconductor structure of claim 48, further comprising a second dopant substantially uniformly disposed in the at least one second region.

54. The semiconductor structure of claim 53, wherein the second dopant is present in at least a second region in the p-doped layer and/or in the active layer and/or at least partially in a region of the n-doped layer adjacent to the active layer.

55. The semiconductor structure of claim 48, wherein the at least one second region comprises a substantially uniform bandgap modified by quantum well intermixing.

56. The semiconductor structure of claim 48, wherein the plurality of first optically active regions and the at least one third region comprise a substantially identical bandgap.

57. The semiconductor structure of claim 48, wherein the plurality of first optically active regions comprises substantially no quantum well intermixing and/or the at least one third region comprises substantially no quantum well intermixing.

58. The semiconductor structure of claim 48, wherein quantum well intermixing decreases in a defined transition region from the at least one second region to the plurality of first optically active regions.

59. The semiconductor structure of claim 53, wherein the second dopant is different from the first dopant.

60. The semiconductor structure of claim 53, wherein the second dopant is formed from a group comprising at least one of Mg, Zn, and/or Cd.

61. A method of manufacturing a semiconductor structure, comprising: providing a semiconductor structure having an n-doped layer, a p-doped layer doped with a first dopant, and an active layer disposed therebetween; applying a mask to the p-doped layer to define a plurality of first optically active regions in the active layer surrounded by at least one second region of the active layer and to define at least one third region disposed in interstices between the plurality of first optically active regions; and generating quantum well intermixing in the at least one second region of the active layer.

62. The method of claim 61, wherein generating quantum well intermixing comprises diffusing a second dopant into the p-doped layer, into the active layer in the at least one second region, and at least partially into a region of the n-doped layer adjacent to the active layer.

63. The method of claim 61, wherein quantum well intermixing occurs only in the at least one second region due to application of the mask to the p-doped layer and due to diffusion of the first dopant into the p-doped layer, into the active layer in the at least one second region, and at least partially in a region of the n-doped layer adjacent to the active layer.

64. The method of claim 62, wherein the second dopant is different from the first dopant and is formed from a group comprising at least one of Mg, Zn, or Cd.

65. The method of claim 61, further comprising separating, including by an etching process, of individual optoelectronic components.

Description

DESCRIPTION OF THE FIGURES

[0062] In the following, the invention is explained in detail with reference to several drawings by means of embodiment examples.

[0063] FIGS. 1A to 1F show an embodiment comprising various process steps for fabricating a semiconductor structure using quantum well intermixing according to some aspects of the concept presented;

[0064] FIG. 2 shows an exemplary course of various process parameters during an execution of the process according to the proposed principle;

[0065] FIG. 3 shows a section of a semiconductor structure to explain various aspects of the concept presented;

[0066] FIG. 4 is a diagram illustrating the barrier height as a function of operating current at different dopants to explain the concept presented;

[0067] FIG. 5 is another diagram illustrating the quantum efficiency at different barrier heights to explain the presented concept;

[0068] FIGS. 6A and 6B each illustrate a top view of a first embodiment of a semiconductor structure suitable for light emission and associated cross-sectional profiles of the bandgap of the semiconductor structure according to some aspects of the concept presented;

[0069] FIGS. 7A and 7B represent a top view of a further embodiment of a semiconductor structure suitable for light emission with associated bandgap cross-sectional profile according to some aspects of the proposed concept;

[0070] FIGS. 8A and 8B are a top view of a third embodiment according to some aspects of the proposed concept with associated cross-sectional profile of the band gap;

[0071] FIGS. 9A and 9B show a top view of a fourth embodiment of the semiconductor structure and associated cross-sectional profiles of the bandgap of the semiconductor structures, as implemented in various aspects;

[0072] FIGS. 10A to 10C illustrate a layered structure and a method for manufacturing one or more optoelectronic devices, in particular LEDs according to some aspects of the concept presented;

[0073] FIG. 11 is a representation of the band gap of the semiconductor structure according to the proposed concept;

DETAILED DESCRIPTION

[0074] FIGS. 1A to 1F show individual steps of a manufacturing process in which, by suitable selection of the process parameters, a further Quantum well intermixing improvement can be generated. It was recognized that application with simultaneous diffusion causes dopant to diffuse into the active layer under a mask, but does not cause quantum well intermixing there. This leaves an increased impurity density in the active layer under a mask intended for light emission, which leads to an accelerated aging process and a deterioration of the properties.

[0075] In FIGS. 1A to 1C, a semiconductor structure 1 is shown which is subjected to further process steps. In FIG. 1A, a growth substrate 10 is provided, for example a GaAs substrate, which is prepared for further growth steps. These further steps may include the deposition of sacrificial layers, passivation layers or even conformal layers to different crystal structures. Likewise, the substrate may already contain, or be prepared for, leads contacts or even circuits.

[0076] An n-doped layer 20 based on a III-V material system is then deposited on the prepared substrate 10. The deposition is carried out in a MOCVD reactor, but other processes disclosed in this application can also be used for this purpose. For example, In, Ga, Al, or a combination thereof together with phosphorus P is used as the material. The exemplary InGaAlP layer 20 is n-doped and can also be provided (not further shown here) with further layers and/or dopants to ensure good electrically conductive contact and low sheet resistance in the n-doped layer 20.

[0077] In FIG. 1B, an active layer 30 is subsequently deposited. This comprises at least one quantum well in which radiative recombination takes place in an operation of the finished device and thus light is generated. The at least one quantum well in the active layer 30 may likewise comprise a layer combination from the III-V semiconductor system, for example consisting of InGaAlP layers with different Al content. Next, a p-doped layer 40 is formed on the active layer 30. For this purpose, a first dopant is used, for example Mg or Zn. As with the n-doped layer 20, doping can be performed during the fabrication process by adding the dopant at the desired concentration. This has the advantage that doping profiles can be generated in the layers already during growth, whereby on the one hand the desired electrical properties can be better adjusted and on the other hand interference points are reduced by more uniform crystal growth.

[0078] After providing the semiconductor structure 1 in the previous steps, a mask 50 is now applied to the p-doped layer in FIG. 1C and structured accordingly. As shown, the patterned mask 50 covers a partial area on the surface of the p-doped layer and thus also lies over a first partial area 33 of the active layer. An adjacent partial area 34 of the active layer is not covered by mask 50. After patterning of the mask 50, doping of the p-doped layer with a second dopant is carried out by gas phase diffusion using a precursor with first and second process parameters. The second dopant is, for example, formed from Zn, e.g. from an organic Zn compound.

[0079] The process parameters for this second step include, among others, temperature, pressure and concentration of the second dopant and can also change during a predetermined period of time. They are selected in such a way that the second dopant, after decomposition of the precursor, is first deposited as layer 45 on the surface of the semiconductor structure and forms a thin layer there, but does not or hardly diffuse into the p-doped layer. For this purpose, for example, the temperature is chosen lower than in a later diffusion process. To provide the second dopant, the dopant is obtained from a decomposition of a precursor in the gas phase. This is done in an MOCVD or MOPVD reactor. The advantage of such a step is that the wafer remains in the reactor between the individual process steps and does not have to be transported. The resulting structure with a thin layer of Zn or other material as a second dopant is shown in FIG. 1D.

[0080] According to FIG. 1E, a separate diffusion process takes place after the dopant is deposited on the surface. The diffusion process is controlled by the process parameters such that the second dopant diffuses through the layer 40 into the active layer and the quantum well. In some cases, it may still diffuse slightly into the boundary region of the n-doped layer. During this process, the second dopant enters the region under the mask by diffusion in the layer 40 (stochastically distributed). In contrast, the first partial region 33 of the active layer under the mask is not interspersed with dopant. Rather, a sharp edge is formed there which, surprisingly, essentially coincides with the projection of the mask 50 into the active layer.

[0081] The process parameters are chosen such that diffusion generates intermixing in the quantum well of the second subregion in the active layer, where the energy gap of the quantum well is increased. In the boundary region between the first and second subdomains, the quantum well intermixing decreases sharply over a short distance, resulting in a relatively steep energy barrier.

[0082] By separating the deposition of the dopant and the subsequent diffusion step, a better control of the individual processes is achieved. In most cases, the deposition of the dopant takes place at a lower temperature than the subsequent diffusion. Thus, on the one hand, the amount of dopant provided can be better adjusted and, on the other hand, the diffusion is independent of the gas phase reaction. In the later separate diffusion step, a suitable temperature profile is set so that a doping profile is established in which the diffusion barrier for charge carriers created by the dopant is close to the energy barrier created by quantum well intermixing.

[0083] After completion of this procedure, the process now proceeds to an optional annealing step, as shown in FIG. 1F. Here, third process parameters are set, which include, in the embodiment example, a higher temperature and the addition of a further precursor 70. This aspect is also described in detail in this application. Through the previous diffusion process, the diffused Zn has displaced other atoms of the crystal lattice from their places and taken their place. The displaced atoms may reside on interstitial sites. It appears that these subsequently remain mobile, possibly forming recombination centers for non-radiative recombination. Their motion could thus cause them to migrate to the first subregion 33, where they could drastically reduce the efficiency of the device. This is supported by the observation that the efficiency drops early on even at low current densities.

[0084] Due to the temperature increase and the possibly optional, suitable choice of the precursor, the lattice atoms displaced by the diffusion step are bound to the surface. As a result, the surface acts as a sink for the interstitial atoms. In simpler terms, the changed process parameters may preferentially diffuse the displaced atoms from the active layer through the p-doped layer to the surface, reducing the concentration of potential non-radiative interferents in the active layer. It was found that using a precursor with a Vth main group material such as phosphorus P or arsenic As results in a significant increase in lifetime.

[0085] FIG. 2 shows qualitatively the time course of a selection of the process parameters, in detail the temperature T, the gas flow of the second dopant and the gas flow of the further precursor during the annealing phase. Between the time period t1 and t2, on the one hand, the temperature is kept at a first temperature T1 and, moreover, the dopant is added so that it can be deposited on the surface of the semiconductor structure. The temperature T1 is chosen in such a way that diffusion of the dopant into the semiconductor body does not occur or occurs only to a very small extent. During this time, the further precursor is not added. At time t2, the dopant is switched off, while the temperature T1 is still maintained until time t3, which is somewhat later.

[0086] After time t3, the temperature is increased to the value T2. The temperature increase starts the diffusion process, i.e. the dopant deposited on the surface diffuses into the p-doped layer. The temperature profile is kept essentially constant in this embodiment example, but non-constant temperature profiles are also conceivable. Depending on the temperature profile, a dopant profile is thus set. In a next step, the atoms displaced by the dopant are now healed out, i.e. removed from the p-doped layer or the active layer and the quantum well by a third temperature T3 over a period of time. For this purpose, in addition to an increase in temperature, the further precursor is added, the decomposition product of which combines with the displaced atoms at the surface. The resulting concentration gradient of mobile displaced atoms removes them from the quantum well of the active layer and binds them to the surface.

[0087] FIG. 3 shows an overview of essential aspects for a possible explanation of the proposed principle. During the diffusion of the dopant, an additional concentration of dopant material is formed in the p-doped layer. When incorporated into the crystal lattice, this dopant displaces atoms of the original semiconductor (e.g., the trivalent component) to interstitial sites. These interstitial atoms cause quantum well intermixing in the active layer, increasing the band gap. Here, the localized region of quantum well intermixing is dictated by the mask, i.e., no quantum well intermixing occurs in the region below the mask as shown in FIG. 3. However, diffusion of the dopant also results in increased doping in the region marked “Region II”, forming a barrier to the lateral diffusion of charge carriers in the quantum well. This barrier is already partially below the mask and is thus locally offset from the boundary of quantum well intermixing. Thus, there are two barriers reducing the lateral diffusion of charge carriers, on the one hand caused by the increased doping and on the other hand by a quantum well intermixing.

[0088] As shown in FIG. 3, the boundary 36 of quantum well intermixing and the boundary 37 of additional p-doping are locally offset, i.e. they do not coincide. From the point of view of carrier diffusion, this means that an increase in the barriers also occurs gradually. The separation between deposition of the dopant and diffusion now allows a change of the diffusion profile by a free choice of a suitable temperature profile during the diffusion process. Thus, for example, the boundary 37 can be pushed towards the boundary 36. This makes the barrier for carrier diffusion steeper at the boundary of the mask 50. Likewise, the impurity density due to the diffused material or even the displaced atoms in the active layer is reduced by making the process parameters more precise. Additionally or alternatively, the electrical activation of the second dopant and thus the barrier caused by the additional p-doping can be increased by optimized process parameters during the diffusion process, which leads to a stronger reduction of the lateral carrier diffusion.

[0089] FIG. 4 shows a simulation of the height of the doping barrier for light-emitting diodes as a function of the doping concentration at low currents. The increased doping shows a significant increase of the doping barrier by a factor of almost two. Thus, charge carriers are effectively kept away from the edge region, but also from the regions with increased number of impurities due to the introduced second dopant.

[0090] This results in a higher internal quantum efficiency. FIG. 5 shows a diagram of the internal quantum efficiency versus current at different dopant concentrations. The improved maximum at higher concentrations for a current in the range of approx. 0.1 mA can be clearly seen.

[0091] With the proposed principle and various measures, an improvement of an optoelectronic device is achieved in both low-current and high-current efficiency. Impurities in the optically active region of an active layer are reduced. At the same time, charge carriers can be kept away from the edge of the element due to the higher diffusion barriers in the edge region of a device (or around the active layer), thus reducing the amount of non-radiating surface recombination.

[0092] In addition to a geometrical consideration for improving the performance in the area of a single LED, the following examples show how to improve a Quantum well intermixing on wafer level. Several structures of optoelectronic devices are produced as single devices or in monolithic form on wafer level, independent of their later use. By the above described Zn diffusion and other measures, improvements in low and high current efficiency can be achieved by lowering the impurity density in the area of the later active layer and by permanently binding or saturating impurity atoms.

[0093] FIG. 6A shows a top view of a section of a first embodiment of a semiconductor structure 0, as well as the corresponding cross-sectional profile of the energy of the bandgap of the semiconductor structure along the section axis A-A. A plurality of first optically active regions 2a and a second region 2b are formed in the semiconductor structure 0. The plurality of first optically active regions 2a are thereby arranged in a hexagonal pattern spaced apart from each other, and the one second region 2b surrounds the plurality of first optically active regions 2a and is arranged in the spaces therebetween.

[0094] Furthermore, each optically active region 2a of the plurality of first optically active regions 2a of the semiconductor structure 0 forms a part of each of a plurality of optoelectronic devices 1. Here, the optoelectronic devices are regarded as light emitting diodes. The plurality of first optically active regions 2a may be formed, for example, by applying a mask or, for example, by applying mask segments possibly having the same or similar shape and size. Subsequently, a second dopant b is applied to the exposed second region 2b around the mask or around the mask segments, respectively, so that quantum well intermixing can take place in this region. Due to the diffusion of the second dopant and the associated quantum well intermixing in the second region, the energy of the band gap changes in this region compared to the regions in which no quantum well intermixing takes place.

[0095] The section of the semiconductor structure 0 shown in FIG. 6A and the curve of the bandgap energy along the section axis A-A derived therefrom show the curve of the bandgap energy in the regions 2a and 2b. From this it can be seen that the energy of the band gap in the second region 2b is larger than in the first optically active regions 2a. A decrease of the band gap energy results from the second region 2b towards the first optically active region 2a and, in a mirrored manner, an increase of the band gap energy results from the first optically active region 2a towards the second region 2b.

[0096] However, this and similar progressions in the following is to be considered as a qualitative progression only and does not represent absolute values or ratios of the energy of the band gap in the plurality of first optically active regions 2a and the second region 2b. Likewise, the transition region between the second and the first optically active region may also vary and be both somewhat shallower and steeper. The only decisive factor is that a largely sharp edge is formed in the transition region of the plurality of first optically active regions 2a to the second region 2b and that the energy of the band gap in the plurality of first optically active regions 2a is smaller than the energy of the band gap in the second region 2b.

[0097] Concomitantly, this means in other words that a dopant concentration of the second dopant b in the second region 2b is greater than the dopant concentration of the second dopant b in the plurality of first optically active regions 2a.

[0098] Furthermore, it is shown in FIG. 6A that the energy of the band gap in the second region 2b does not have a constant value, but shows local maxima of the energy of the band gap in the regions where the largest possible distance between the plurality of first regions 2a occurs. This is due to the fact that the diffusion process and thus the quantum well intermixing proceeds more efficiently in the region of larger areas exposed to the second dopant b than in smaller gaps between two first optically active regions 2a covered, for example, by a mask.

[0099] The section of the semiconductor structure 0 shown in FIG. 6B and the course of the bandgap energy along the section axis (B-B) derived therefrom show the course of the bandgap energy along the circumference of an optoelectronic component 1, with the section axis running through the second region 2b. According to the above explanation, the energy of the band gap in the second region 2b does not have a constant value, but comprises maxima in the regions where the largest possible distance between the plurality of first regions 2a occurs and minima, in the regions where the smallest possible distance between the plurality of first regions 2a occurs. In FIG. 6B, the regions of local maxima of the bandgap energy of the semiconductor structure are exemplarily denoted by Y, and the regions of local minima of the bandgap energy of the semiconductor structure are exemplarily denoted by X and Z.

[0100] In practice, however, it is desirable to achieve as homogeneous and constant a bandgap energy as possible in the second region 2b of the semiconductor structure 0 and correspondingly along the circumference of an optoelectronic device 1. Therefore, in the following, among others, the three embodiments (FIGS. 7A and 7B, 8A and 8B and 9A and 9B) are presented to counteract the effect of local maxima of the bandgap energy in the semiconductor structure 0. FIGS. 7A and 7B, 8A and 8B, and 9A and 9B each show a top view of an embodiment of the semiconductor structure 0 according to the invention and an associated cross-sectional profile of the bandgap energy of the semiconductor structure along the intersection axes A-A and B-B.

[0101] In addition to the example of a structure in FIGS. 6A and 6B, at least one further third region 2c is formed here in addition to the plurality of first optically active regions 2a and the at least one second region 2b. The at least one third region 2c is again arranged in the spaces between the plurality of first optically active regions 2a.

[0102] More specifically, FIG. 7A shows a section of a semiconductor structure 0 having a plurality of first optically active regions 2a, a second region 2b, and a plurality of third regions 2c. The plurality of first optically active regions 2a are spaced apart from each other in a hexagonal pattern as described above. The second region 2b surrounds the plurality of first optically active regions 2a in such a manner that each of the plurality of first optically active regions 2a is annularly and/or concentrically surrounded by the second region 2b. The second area 2b thereby divides into ring segments, for example, and is connected to the next adjacent ring segment of the second area 2b, for example, only in a punctiform manner. The plurality of third regions 2c is formed in the form of a deltoid curve by three of the ring segments of the second region 2b in each case. The plurality of first optically active regions 2a and third regions 2c can be formed, for example, by applying a mask or, for example, by applying mask segments possibly of the same or similar shape and size. Subsequently, a second dopant b is applied to the exposed second region 2b around the mask or around the mask segments, respectively, so that quantum well intermixing can take place in this region.

[0103] The section of the semiconductor structure 0 further shown in FIG. 7A and the energy of the band gap thereof along the section axis A-A shows the energy of the band gap in the regions 2a, 2b and 2c. From this, it can be seen that the band gap in the second region 2b is larger than in the first optically active regions 2a and third regions 2c. In the areas where the axis A-A intersects the second area 2b respectively, a local increase in the band gap can be seen. According to the area of the second area 2b intersected by the axis A-A, a higher or lower value results for energy of the band gap in each case.

[0104] However, this gradient is to be regarded as a qualitative gradient only and does not represent absolute values or ratios of the energy of the bandgap of the plurality of first optically active regions 2a, the second region 2b, and the plurality of third regions 2c. Likewise, the transition regions between the first optically active region, the second region 2b, and the third regions 2c may also vary and be both somewhat shallower and steeper.

[0105] The only decisive factor is that a largely sharp edge is formed in the transition region from the plurality of first optically active regions 2a to the second region 2b and in the transition region from the third regions 2c to the second region 2b, and that the energy of the band gap in the plurality of first optically active regions 2a and third regions 2c is smaller than the energy of the band gap in the second region 2b. Concomitantly, in other words, the dopant concentration of the second dopant b in the second region 2b is larger than the dopant concentration of the second dopant b in the plurality of first optically active regions 2a and third regions 2c.

[0106] The section of the semiconductor structure 0 shown in FIG. 7B and the course of the bandgap energy along the section axis B-B derived therefrom show the course of the bandgap energy along the circumference of an optoelectronic component 1. The section axis runs through the second region 2b. Contrary to the illustration in FIG. 6B, the energy of the band gap in the second region 2b exhibits a less pronounced variation. By introducing the plurality of third regions 2c, it is achieved that in the region of the interstices of three each of the plurality of first optically active regions 2a, the local maxima of the bandgap energy in the semiconductor structure 0 are less pronounced. Thus, a more uniform bandgap energy can be achieved in the second region 2b. This in turn leads to an increase in the performance of the optoelectronic devices 1.

[0107] A further embodiment of the semiconductor structure 0 according to the invention and the course of the energy of the band gap in the semiconductor structure 0 along the intersection axes A-A and B-B derived therefrom are shown in FIGS. 8A and 8B.

[0108] Therein, the plurality of third regions 2c are each circular in shape and are disposed at the center of each three of the plurality of first optically active regions 2a. Likewise, the term circular may also include elliptical, as well as oval and other round convex shapes. This arrangement of the plurality of third regions 2c serves, in a manner analogous to that shown in FIGS. 7A and 7B, to reduce local maxima of the deposited second dopant b on the semiconductor structure 0 so as to achieve a substantially uniform dopant concentration in the second region 2b. The third regions 2c shown in FIG. 8A, which are circular in shape and are arranged in the center of three of the plurality of first optically active regions 2a in each case, already show an increase in the performance of the optoelectronic components 1. Accordingly, the second region 2b does not result as a continuous ring segment, but fills the space between the plurality of first optically active regions 2a and third regions 2c.

[0109] The plurality of first optically active regions 2a and third regions 2c can be formed, for example, by applying a mask or, for example, by applying mask segments possibly of the same or similar shape and size. For this purpose, a second dopant b is applied to the exposed second region 2b around the mask or around the mask segments, respectively, so that quantum well intermixing can take place in this region.

[0110] The section of the semiconductor structure 0 further shown in FIG. 8A and the course of the energy of the band gap along the section axis A-A derived therefrom show the energy of the band gap in the regions 2a, 2b and 2c. From this, it can be seen that the energy of the band gap in the second region 2b is larger than in the first optically active regions 2a and third regions 2c. In the regions where the axis A-A intersects the second region 2b, respectively, a local increase of the band gap can be seen. Likewise, the transition areas between the first area, the second area 2b and the third areas 2c can also vary and be both somewhat flatter and steeper.

[0111] The only decisive factor is that a largely sharp edge is formed in the transition region from the plurality of first optically active regions 2a to the second region 2b and in the transition region from the third regions 2c to the second region 2b, and that the energy of the band gap in the plurality of first optically active regions 2a and third regions 2c is smaller than the energy of the band gap in the second region 2b. Concomitantly, in other words, the dopant concentration of the second dopant b in the second region 2b is larger than the dopant concentration of the second dopant b in the plurality of first optically active regions 2a and third regions 2c.

[0112] The further section of the semiconductor structure 0 shown in FIG. 8B and the course of the bandgap energy along the section axis indicated by the arrow derived therefrom show the course of the bandgap energy along the circumference of an optoelectronic component 1. The section axis runs through the second region 2b. As shown in FIG. 7B, the bandgap energy in the second region 2b again comprises a substantially constant value.

[0113] Since the plurality of third regions 2c each cover a smaller area than the plurality of third regions 2c of the embodiment in FIG. 7A, more pronounced local maxima result in the regions where the largest possible distance to the plurality of first regions 2a and third regions 2c occurs. Correspondingly, local minima also result in the areas where the smallest possible distance between the plurality of first areas 2a and third areas occurs. In FIG. 8B, the regions of local maxima of the bandgap energy of the semiconductor structure are exemplarily designated by X and Z, and the regions of local minima of the bandgap energy of the semiconductor structure are exemplarily designated by Y.

[0114] It is decisive that in comparison to the embodiment in FIG. 6A, due to the introduction of the plurality of third regions 3c, the local maxima of the bandgap energy in the semiconductor structure 0 are smaller in amount, so that a comparatively homogeneous and constant energy of the bandgap prevails along the circumference of an optoelectronic component 1 or within the second region 2b in the semiconductor structure 0. This in turn already leads to an increase in the performance of the optoelectronic components 1.

[0115] Furthermore, FIG. 8B shows that one optically active region 2a of each of the plurality of first optically active regions 2a of the semiconductor structure 0 forms a part of each optoelectronic device 1.

[0116] A further embodiment of the semiconductor structure 0 according to the invention and the course of the energy of the band gap in the semiconductor structure 0 along the intersection axes A-A and B-B derived therefrom are shown in FIGS. 9A and 9B. The plurality of first optically active areas 2a are each concentrically surrounded by a second area 2b. Accordingly, there is a plurality of second areas 2b, each of which is arranged in a ring or circle around one of the plurality of first optically active areas 2a. Likewise, the term annular or circular may also include elliptical, as well as oval and other roundish convex shapes.

[0117] Further, the semiconductor structure 0 comprises a third region 2c disposed in the spaces between the plurality of first optically active regions 2a and second regions 2b. The plurality of first optically active regions 2a and the third region 2c can be formed, for example, by applying a mask or, for example, by applying mask segments possibly having the same or similar shape and size. For this purpose, a second dopant b is applied to the exposed second regions 2b around the mask or around the mask segments, respectively, so that quantum well intermixing can take place in this region.

[0118] This annular arrangement of the plurality of second regions 2b around one each of the plurality of first optically active regions 2a and the third region 2c prevents local maxima of the applied second dopant b from forming in the region of the spaces between three each of the first optically active regions 2a. Thus, a substantially uniform dopant concentration can be achieved in the plurality of second regions 2b. This in turn leads to the fact that a substantially uniform quantum well intermixing can take place in the plurality of second regions 2b, which leads to an increase in the performance of the optoelectronic devices 1.

[0119] The course of the bandgap energy along the intersection axis A-A shown in FIG. 9A shows that the bandgap energy in the second region 2b is greater than in the first optically active region 2a and the third region 2c. In the areas where the axis A-A intersects the second area 2b in each case, a local increase in the band gap can be seen.

[0120] However, this gradient is to be regarded as a qualitative gradient only and does not represent any absolute values or ratios between the energy of the band gap of the plurality of first optically active regions 2a, the second region 2b and the third region 2c. Likewise, the transition regions between the first optically active region, the second region 2b and the third region 2c can also vary and be both somewhat flatter and steeper.

[0121] The only decisive factor is that a largely sharp edge is formed in the transition region from the plurality of first optically active regions 2a to the second regions 2b and in the transition region from the third region 2c to the second regions 2b, and that the energy of the band gap in the plurality of first optically active regions 2a and in the third region 2c is smaller than the energy of the band gap in the second regions 2b.

[0122] In other words, this means that the dopant concentration of the second dopant b in the second regions 2b is greater than the dopant concentration of the second dopant b in the plurality of first optically active regions 2a and the third region 2c.

[0123] The section of the semiconductor structure 0 shown in FIG. 9B and the course of the bandgap energy along the cut axis B-B derived therefrom show the course of the bandgap energy along the circumference of an optoelectronic component 1. The cut axis runs through the second region 2b in this case.

[0124] As shown in FIGS. 6B, 7B and 8B, the energy of the band gap in the second region 2b comprises a largely constant value. By introducing the third region 2c, it is avoided that local maxima of the applied second dopant b are formed in the region of the interstices of three first optically active regions 2a, respectively, and thus no local maxima of the band gap energy in the semiconductor structure 0 are formed. Thus, a substantially uniform energy of the band gap in the second region 2b can be achieved.

[0125] FIGS. 10A, 10B and 10C show the layer structure and correspondingly the fabrication of a semiconductor structure 0 as shown in FIGS. 7A, 8A and 9A. The semiconductor structure 0 comprises an n-doped first layer 5, a p-doped second layer 6 mixed with a first dopant and an active layer 2, which is arranged between the n-doped first layer 5 and the p-doped second layer 6 and which comprises at least one quantum well. The layers are epitaxially deposited, for example, on a supporting substrate not shown here. In addition to the layers shown here, further layers, contact layers, sacrificial layers or the like may be provided.

[0126] FIG. 10B shows the next step, in which a structured mask 7 is applied. The mask is perforated in some places so that dopant b is introduced there. The diffusion of the second dopant b into the active layer 2 causes the quantum well intermixing described above.

[0127] By applying a mask or mask segments 7, for example a dielectric or photoresist mask, to the surface of the p-doped second layer 6 and the subsequent diffusion process, the structure shown in FIG. 10C is formed. It shows a number of optically active regions below the mask 7 with surrounding second regions 2b and the at least one third region 2c. The structure and the structure result as mentioned from the structuring of the applied mask 7. The second dopant b diffuses through the p-doped second layer 6 and into the active layer 2 and forms the regions 2a,2b and 2c therein. Accordingly, the regions 2a, 2b and 2c in the active layer 2 result in the form of a projection of the mask or mask segments 7, which is applied to the surface of the p-doped second layer 6, in the active layer 2.

[0128] The plurality of first optically active regions 2a and the at least one third region 2c result as the regions which are located in direct projection below the mask or the mask segments 7, respectively, and into which essentially no second dopant b diffuses due to the mask or the mask segments 7, respectively.

[0129] Accordingly, the at least one second region 2b results as the region which is located in direct projection below the region which is exposed to the second dopant b around the mask or the mask segments 7 as a free surface. Consequently, in the at least one second region 2b, the second dopant b diffuses into the second p-doped layer 6, into the active layer 2 and, depending on the doping profile and process parameters, partly also into a region of the n-doped layer 5 adjacent to the active layer 2.

[0130] As a result, the at least one second region 2b has the second dopant b and thus quantum well intermixing.

[0131] FIG. 11 shows the layer structure of the semiconductor structure 0 after application of the mask or mask segments 7 and diffusion of the second dopant b as well as the band gap of the at least one quantum well in the active layer 2. The energy of the band gap E in the vertical direction of the diagram is shown over the cross-section of the semiconductor structure 0 in the horizontal direction of the diagram.

[0132] Viewed from left to right, the energy of the band gap E is essentially constant in the third area 2c and increases in a defined transition area from the third area 2c to the second area 2b. In the second region 2b, the energy of the bandgap E again has a constant value and then drops in a defined transition region from the second region 2b toward the first optically active region 2b, where the energy of the bandgap E of the first optically active region 2a assumes a constant value. In a mirrored manner, corresponding to this course, there is an increase of the energy of the band gap E in a defined transition region from the first optically active region 2a to the second region 2b and a decrease of the energy of the band gap E in a defined transition region from the second region 2b to the third region 2c.

[0133] However, the depicted variation of the energy of the band gap E may vary and does not represent absolute values or ratios between the energy of the band gap E in the first optically active regions 2a, the at least one second region 2b, and the at least one third region 2c. Likewise, the transition region between the at least one second region 2b and the first optically active regions 2a and the transition region between the at least one second region 2b and the at least one third region 2c may also vary and be both somewhat shallower and steeper.

[0134] Decisive ifigur st only that the energy of the band gap E of the first optically active regions 2a and the at least one third region 2c is smaller than that of the at least one second region 2b, and that the energy of the band gap E in each of the first optically active regions 2a and the at least one second region 2b is substantially constant along the circumference of the region 2a.