ELECTRONIC COMPONENT AND METHOD FOR PRODUCING AN ELECTRONIC COMPONENT

Abstract

Electronic component with a support comprising a first inorganic insulating layer and a second inorganic insulating layer, between which a metal core is arranged, a first, a second and a third electrically conductive structure which are arranged on a top surface of the carrier, a first and a second electrical contact point and a thermal contact point, which are arranged on a bottom surface of the carrier, a component and an electrical protection element which are arranged on the side of the top surface of the carrier, in which the first electrically conductive structure is electrically conductively connected to the first electrical contact point, the second electrically conductive structure is electrically conductively connected to the second electrical contact point, the third electrically conductive structure is electrically conductively connected to the thermal contact point, the component is electrically conductively connected to the first and second electrically conductive structures, the electrical protection element is electrically conductively connected to the third electrically conductive structure and the first or second electrically conductive structure.

Claims

1. Electronic component with a support comprising a first inorganic insulating layer and a second inorganic insulating layer, between which a metal core is arranged, a first, a second and a third electrically conductive structure which are arranged on a top surface of the carrier, a first and a second electrical contact point and a thermal contact point, which are arranged on a bottom surface of the carrier, a component and an electrical protection element which are arranged on the side of the top surface of the carrier, in which the first electrically conductive structure is electrically conductively connected to the first electrical contact point, the second electrically conductive structure is electrically conductively connected to the second electrical contact point, the third electrically conductive structure is electrically conductively connected to the thermal contact point, the component is electrically conductively connected to the first and second electrically conductive structures, the electrical protection element is electrically conductively connected to the third electrically conductive structure and the first or second electrically conductive structure.

2. Electronic component according to claim 1, wherein the device via the thermal contact point is not operable.

3. Electronic component according to claim 1, wherein the electrical protection element limits an electrical voltage (U) between the thermal contact point and the first or second electrically conductive structure to a maximum value.

4. Electronic component according to claim 1, in which the first and second inorganic insulating layers are formed with an oxide of the material of the metal core.

5. Electronic component according to claim 1, wherein the thermal contact point and the electrical protection element are electrically conductively connected by means of a third via, wherein the third via is electrically isolated from the metal core.

6. Electronic component according to claim 1, wherein the thermal contact point and the electrical protective element are electrically conductively connected to one another by means of the metal core.

7. Electronic component according to claim 1, in which the thermal contact point and the electrical protection element are non-overlapping with each other in a vertical direction.

8. Electronic component according to claim 1, in which the electrical protection element and the component are parts of a common semiconductor component.

9. Electronic component according to claim 1, in which the electrical protection element is formed with two Zener diodes connected in antiseries.

10. Electronic component according to claim 1, in which the electrical protection element is formed with two diodes connected in antiparallel.

11. Electronic component according to claim 1, in which the electrical protection element is formed with a varistor.

12. Method for producing an electronic component with the following method steps: A) providing a metal core; B) producing a first and a second inorganic insulating layer; C) removing the first inorganic insulating layer in a first region and removing the second inorganic insulating layer in a second region; D) applying a thermal contact point in the second region; E) applying a third electrically conductive structure in the first region, F) applying an electrical protective element on the third electrically conductive structure, wherein the thermal contact point and the electrical protective element via the metal core are electrically connected to one another.

13. Method for producing an electronic component according to claim 12, wherein at least one first and one second breakthrough are generated in a method step A1) which is carried out before method step B), in process step B) in the region of the first and the second breakthrough, a third inorganic insulating layer is arranged, and the first via in the first breakthrough and the second via in the second breakthrough are formed by means of an electrically conductive material.

14. Method for producing an electronic component according to claim 12, wherein in method step B) a first and a second metallic layer are deposited on the metal core, wherein the first and second metallic layers are formed with different materials, and the first metallic layer is converted into the first inorganic insulating layer, the second metallic layer is converted into the second inorganic insulating layer.

Description

[0049] Further advantages and advantageous embodiments and further developments of the electronic component and of the method for producing an electronic component result from the following exemplary embodiments illustrated in conjunction with the figures.

[0050] FIGS. 1, 4, 6, 8 and 17 show top views of the top surface of exemplary embodiments of electronic components.

[0051] FIGS. 2 and 16 each show a plan view of a schematic illustration of the bottom surface of an exemplary embodiment of an electronic component.

[0052] FIGS. 3, 5, 7, 9 and 10 are schematic sectional views of exemplary embodiments of electronic components.

[0053] FIGS. 11 to 15 show schematic sectional representations of an exemplary embodiment of a production method for producing an electronic component.

[0054] The same, similar or equivalent elements are provided in the figures with the same reference numerals. The figures and the proportions of the elements shown in the figures with each other are not to be considered to scale. Rather, individual elements may be exaggerated in size for better representability and/or better intelligibility.

[0055] FIG. 1 shows a schematic plan view of the top surface 10a of an exemplary embodiment of an electronic component 1. The electronic component 1 comprises a carrier 10 having a first and a second inorganic insulating layer 101, 102, between which a metal core is arranged. In particular, the top surface 10a of the carrier 10 is formed with the first inorganic insulating layer 101. Furthermore, the electronic component 1 comprises a first, a second and a third electrically conductive structure 201, 202, 203, which are arranged on the top surface 10a of the carrier 10. The electrically conductive structures 201, 202, 203 are formed with an electrically conductive material, in particular a metal. The first, the second and the third electrically conductive structure 201, 202, 203 are not formed contiguous. On the carrier 10, a component 50 and an electrical protection element 60 are arranged on the side of the top surface 10a.

[0056] In particular, the electrical protection element 60 and the device 50 are parts of a common semiconductor device 5. For example, the electrical protection element 60 and the device 50 are manufactured in a common manufacturing process. The semiconductor device 5 is disposed on the first electrically conductive structure 201. In particular, the component 5 is electrically conductively connected to the first electrically conductive structure 201. Furthermore, the component 5, in particular the electrical protection element 50, is electrically conductively connected to the third electrically conductive structure 203 by means of a bonding wire 71. Furthermore, the component 50 is electrically conductively connected to the second electrically conductive structure 202 by means of a bonding wire 71. In particular, the first electrically conductive structure 201 is arranged on a first via 401, the second electrically-conductive structure 202 is arranged on a second via 402, and the third electrically conductive structure 203 is arranged on a third via 03. The first, second and third vias 401, 402 and 403 completely penetrate the carrier 10 transversely to its main extension plane.

[0057] The first electrically conductive structure 201 is electrically conductively connected to a first electrical contact point 301, which is arranged on the bottom surface 10b facing away from the top surface 10a. The second electrically conductive structure 202 is electrically conductively connected to a second electrical contact point 302, which is arranged on the bottom surface 10b. The third electrically conductive structure 203 is electrically conductively connected to a thermal contact point 303, which is arranged on the bottom surface 10b facing away from the top surface 10a. The device 50 is electrically conductively connected to the first and the second electrically conductive structure 201, 202. The electrical protection element 60 is electrically conductively connected to the third electrically conductive structure 203 and the first 201 or the second 202 electrically conductive structure. In the present case, the electrical protection element 60 is electrically conductively connected to the third 203 and the first 201 electrically conductive structure.

[0058] The FIG. 2 shows a schematic plan view of the bottom surface 10b of an embodiment of an electronic component 1. On the bottom surface 10b of the carrier 10, the first contact point 301, the second contact point 302 and the thermal contact point 303 are arranged. The contact points 301, 302, 303 are arranged at a distance from each other on the bottom surface 10b. For example, the bottom surface 10b of the carrier 10 is formed with the second inorganic insulating layer 102. The electrical protective element 60 arranged on the top surface 10a is connected in an electrically conductive manner to the third electrically conductive structure 203 and via the third via 403 to the thermal contact point 303. The first contact point 301 is electrically conductively connected to the first electrically conductive structure 201 and the component 50 via the first via 401. The second contact point 302 is electrically conductively connected to the second electrically conductive structure 202 and the component 50 via the second via 402. In particular, during intended operation, the component 50 can be electrically conductively contacted and operated via the first contact point 301 and the second contact point 302. The thermal contact point 303 is designed to dissipate the heat generated in the intended operation of the electronic component 1. In particular, the thermal pad 303 has a larger exposed surface than the first and second contact points 301, 302.

[0059] The FIG. 16 shows a schematic plan view of the bottom surface 10b of an embodiment of an electronic component 1. On the bottom surface 10b of the carrier 10, the first electrical contact point 301, the second electrical contact point 302, a third electrical contact point 304, a fourth electrical contact point 305 and the thermal contact point 303 is arranged. The electronic component 1 has more than two, in particular exactly four, electrical contact points 301, 302, 304, 305. For example, during intended operation of the electronic component 1, at least two of the electrical contact points 301, 302 are at a different electrical potential. The third 304 and/or fourth 305 electrical contact point may, for example, be set up so that a signal can be transmitted via the latter during intended operation. By way of example, data can be transmitted by means of the signal and/or the component 50 can be controlled by means of the signal.

[0060] The FIG. 17 shows a schematic plan view of the top surface 10a of an exemplary embodiment of an electronic component 1. In particular, FIG. 17 shows the top surface 10a of the electronic component, the bottom surface 10b of which is illustrated in FIG. 16. The electronic component 1 comprises a carrier 10 with a first and a second inorganic insulating layer 101, 102, between which a metal core 105 is arranged. On the carrier 10, a component 50 and an electrical protection element 60 are arranged on the side of the top surface 10a. Furthermore, the electronic component 1 comprises a first, a second, a third, a fourth and a fifth electrically conductive structure 201, 202, 203, 204, 205, which are arranged on the top surface 10a of the carrier 10. The electrically conductive structures 201, 202, 203, 204, 205 are formed with an electrically conductive material, in particular a metal. The electrically conductive structures 201, 202, 203, 204, 205 are not formed contiguous.

[0061] The first electrically conductive structure 201 is electrically conductively connected to the first electrical contact point 301 by means of a first via 401. The second electrically conductive structure 202 is electrically conductively connected to the second electrical contact point 302 by means of a second via 402. The third electrically conductive structure 203 is electrically conductively connected to the thermal contact point 303 by means of a third via 403. The fourth electrically conductive structure 204 is electrically conductively connected to the third electrical contact point 304 by means of a fourth via 404. The fourth electrically conductive structure 205 is electrically conductively connected to the fourth electrical contact point 305 by means of a fifth via 404.

[0062] The FIG. 3 shows a schematic sectional view of an electronic component 1 according to an embodiment. The electronic component 1 has a carrier 10 which is formed with a metal core 105, a first inorganic insulating layer 101 and a second inorganic insulating layer 102. In particular, the metal core 105 is potential-free. The semiconductor component 5 arranged on the top surface 10a is electrically conductively connected to the first, the second and the third electrically conductive structure 201, 202, 203. In particular, the electrical protection element 60 is electrically conductively connected to the third electrically conductive structure 203 by means of a bonding wire 71. The component 50 is electrically conductively connected to the second electrically conductive structure 202 by means of a bonding wire 71. On the top surface 10a, a potting 75 is arranged, which surrounds the semiconductor device 5.

[0063] The FIG. 4 shows a schematic plan view of the top surface 10a of an exemplary embodiment of an electronic component 1, which comprises four components 50. The components 50 are arranged on separate electrically conductive structures 200 and are electrically conductively interconnected by means of bonding wires 71. In particular, each component 50 is connected in parallel by means of a further protective element 61. The further protective element 61 protects the component 50 connected in parallel to the further protective element 61 from excessive voltages.

[0064] The protective element 60 is arranged on the third electrically conductive structure 203 and electrically conductively connected to the second electrically conductive structure 202 by means of a bonding wire 71. During intended operation, the electrical protection element 60 limits an electrical voltage U between the thermal contact point 303 and the first or second electrically conductive structure 201, 202 to a maximum value. In particular, the maximum value of the electrical voltage U between the thermal contact point 303 and the second electrically conductive structure 202 is smaller than a breakdown voltage of the carrier 10. For example, the carrier 10 has a breakdown voltage of 100 V, in particular 500 V, particularly preferably 1000 V.

[0065] The FIG. 5 shows a schematic sectional view of an electronic component 1 according to one exemplary embodiment. In contrast to the exemplary embodiment illustrated in FIG. 3, the protective element 60 is not arranged on the same electrically conductive structure 201 as the component 50. In the present case, the protective element 60 is arranged on the third electrically conductive structure 203 and the component 50 is arranged on the first electrically conductive structure 201. By means of a bonding wire 71, the protective element 60 is electrically conductively connected to the first electrically conductive structure 201. Thus, the electronic component 1 is protected against an electrical flashover from the first electrically conductive structure 201 to the thermal contact point 303. From which voltage value between the first electrically conductive structure 201 and the thermal contact point 303, the protective element 60 allows a current flow, can be selected depending on the breakdown voltage of the carrier 10. In particular, the breakdown voltage of the carrier 10 depends on the material properties of the inorganic electrically insulating layers and the metal core 105.

[0066] By way of example, the first and second inorganic insulating layers 101, 102 have a thickness of not more than 20 m, in particular not more than 50 m. For example, the inorganic insulating layers are formed with a material having a breakdown voltage of 20 volts per micron. For example, the metal core 105 is formed with aluminum. In particular, the first and second inorganic electrically insulating layers 101, 102 are formed with aluminum oxide. In particular, the first and second inorganic insulating layers 101, 102 are formed with an oxide of the material of the metal core 105. The protective element 60 prevents a current from being able to be impressed into the electronic component 1 via the thermal contact point 303 in order, for example, to operate the component 50.

[0067] In particular, the protective element 60 may be formed with a varistor. Above a predetermined maximum value, the differential resistance of the varistor decreases abruptly. The characteristic of the varistor is symmetrical to the voltage, the polarity does not matter. The varistor can be formed, for example, with a metal oxide, in particular with the material of the first or second inorganic insulating layer 101, 102.

[0068] FIG. 6 shows a schematic plan view of the top surface 10a of an electronic component 1 according to one exemplary embodiment. In contrast to the exemplary embodiment illustrated in FIG. 4, according to FIG. 6 the protective element 60 is formed with two Zener diodes 600 connected in antiseries. In particular, the Zener diodes 600 are arranged on a common electrically conductive structure of the electronic component 1. Thus, at least one of the diodes of the protection element 60, when exceeding the maximum value of the electrical voltage U between the second electrically conductive structure 202 and the thermal contact point 303, is operated in the reverse direction. Consequently, the maximum value at which a nominal current flow through the protective element 60 is possible is predetermined by the sum of the Zener voltage and the forward voltage of the two Zener diodes 600. In particular, the sum of the Zener voltage and the forward voltage of the two Zener diodes 600 of the protection element 60 is selected such that this sum is less than the breakdown voltage of the carrier 10.

[0069] The FIG. 7 shows a schematic sectional view of an embodiment of an electronic component 1. In contrast to the embodiments shown in FIG. 5 and FIG. 3, the protective element 60 is formed with two Zener diodes 600. In particular, the two Zener diodes 600 are connected in antiseries to one another. For example, the two Zener diodes 600 are arranged on a common electrically conductive structure 200. Furthermore, a Zener diode is electrically conductively connected to the third electrically conductive structure 203 by means of a bonding wire 71. The other Zener diode 600 is electrically conductively connected to the first electrically conductive structure 201 by means of a bonding wire 71. In particular, the component 50 is also connected in an electrically conductive manner to the first electrically conductive structure 201. For example, the component 50 can be operated by energizing the first and second contact points 301, 302.

[0070] FIG. 8 shows a schematic plan view of the top surface 10a of an electronic component 1 according to an exemplary embodiment. Analogous to the exemplary embodiment illustrated in FIG. 6, the protective element 60 is formed with two antiseries Zener diodes 600 connected in antiseries. In contrast to the exemplary embodiment illustrated in FIG. 6, the two Zener diodes 600 are arranged on different electrically conductive structures 202, 203. By means of a bonding wire 71, the two Zener diodes 600 of the protective element 60 are electrically conductively connected to one another.

[0071] FIG. 9 shows a schematic sectional view of an exemplary embodiment of an electronic component 1. In contrast to FIG. 7, FIG. 9 shows an exemplary embodiment in which the Zener diodes with which the protective element 60 is formed are arranged on different electrically conductive structures 201, 203. In particular, a Zener diode 600 is arranged on the third electrically conductive structure 203, and a further Zener diode 600 is arranged on the first electrically conductive structure 201. The Zener diodes 600 are electrically conductively connected to one another by means of a bonding wire 71.

[0072] FIG. 10 shows a schematic sectional view of an electronic component 1, according to an exemplary embodiment. In contrast to the exemplary embodiments illustrated in FIG. 3, FIG. 5, FIG. 7 and FIG. 9, the third electrically conductive structure 203 and the thermal contact point 303 are not electrically conductively connected to one another by means of a third via 403. In the present case, the first inorganic insulating layer 101 and the second inorganic insulating layer 102 have a first region 101 a and a second region 102 a, in which the first and second inorganic insulating layers 101, 102 are removed. In the first region 101a, the third electrically conductive structure 203 is connected in an electrically conductive manner to the metal core 105. In particular, the third electrically conductive structure 203 and the metal core 105 are in direct contact with each other in the first region 101a.

[0073] In the second region 102a, the thermal contact point 303 is electrically conductively connected to the metal core 105. In particular, the thermal contact point 303 and the metal core 105 are in direct contact with each other in the second region 102a. The thermal contact point 303 and the third electrically conductive structure 203 are electrically conductively connected to one another by means of the metal core 105. In particular, the electronic component 1 can have a multiplicity of thermal contact points 303, which are electrically conductively connected to the metal core 105 via different second regions 102a. Advantageously, this allows an electrically conductive connection of a plurality of thermal contact points 303 with the protective element 60, wherein the thermal contact points 303 are not formed contiguous. This enables a particularly high density of thermal contact points 303 on the bottom surface 10b of the carrier 10, whereby heat arising in the intended operation of the component 50 can be dissipated particularly efficiently.

[0074] In particular, the thermal pad 3 and the electrical protection element 60 are arranged non-overlapping in a vertical direction. The vertical direction is perpendicular to the main plane of extension of the carrier 10.

[0075] FIG. 11 shows a metal core 105 according to method steps A) and A1). In step A), a metal core 105 was provided. In method step A1), a first breakthrough 501 and a second breakthrough 502 were produced in the metal core 105.

[0076] FIG. 12 shows a sectional view of the method for producing an electronic component according to an embodiment according to method steps B) and C). In method step B), a first and a second inorganic insulating layer 101, 102 were produced by means of anodic oxidation of the metal core 105. Furthermore, a third inorganic insulating layer 103 was produced in the region of the first 501 and the second aperture 502 by means of anodic oxidation. The metal core 105 is completely covered on all sides by inorganic insulating layers after process step B).

[0077] In the method step C), the first inorganic insulating layer 101 is removed in a first region 101a, so that the metal core 105 has an outwardly-releasing surface on the top surface 10a. Furthermore, in method step C), the second inorganic insulating layer 102 is removed in a second region 102a, such that the metal core 205 has an outwardly exposed surface on the bottom surface 10b. For example, the inorganic insulating layers in the first and second regions 101a, 102a are removed by mechanical processing, especially grinding or drilling, by wet chemical etching in conjunction with upstream photolithography, dry etching in conjunction with upstream lithography, or laser ablation.

[0078] FIG. 14 shows a sectional view of the production method of an electronic component 1 according to an exemplary embodiment according to method steps D), E) and F). In a method step D), a thermal contact point 303 was arranged in the second region 102a. The thermal contact point 303 is electrically conductively connected to the metal core 105 in the second region 102a. In method step E), a third electrically conductive structure was arranged in the first region 101a. The third electrically conductive structure 203 is electrically conductively connected to the core 105. Further, the breakthroughs 501, 502 were filled with an electrically conductive material, so that in the first breakthrough 501 a first via 401 and in the second breakthrough 502 a second via 402 is formed. On the bottom surface 10b of the carrier, a second contact point 302 is arranged in the region of the second aperture 502, and a first contact point 301 is arranged in the region of the first aperture 501. Furthermore, a second electrically conductive structure 202 is arranged on the top surface 10a in the region of the second via, and a first electrically conductive structure 201 is arranged in the region of the first via. In particular, the electrically conductive structures 201, 202 and the contact points 301, 302, which are electrically conductively connected to one another by means of vias 401, 402, are not electrically conductively connected to the metal core 105.

[0079] FIG. 15 shows a schematic sectional view of a method for producing an electronic component after method step F). In method step F), an electrical protective element 60 is electrically conductively connected to the third electrically conductive structure 203, the thermal contact point 303 and the electrical protective element 60 being electrically conductively connected to one another via the metal core 105. The component 50 is arranged on the top surface 10a of the carrier 10 and contacted by means of a bonding wire 71 in an electrically conductive manner. In particular, the device 50 is operable by impressing a current on the first and second contact points 301, 302.

[0080] The invention is not limited by the description based on the embodiments of these. Rather, the invention encompasses any novel feature as well as any combination of features, which includes in particular any combination of features in the patent claims, even if this feature or combination itself is not explicitly stated in the patent claims or exemplary embodiments.

LIST OF REFERENCE NUMBERS

[0081] 1 electronic component [0082] 5 conductor device [0083] 10 support [0084] 10a top surface [0085] 10b bottom surface [0086] 50 component [0087] 60 protection element [0088] 71 bonding wire [0089] 75 potting [0090] 101 first inorganic insulating layer [0091] 101a first region [0092] 102 second inorganic insulating layer [0093] 102a second region [0094] 103 third inorganic insulating layer [0095] 105 metal core [0096] 200 electrically conductive structure [0097] 201 first electrically conductive structure [0098] 202 second electrically conductive structure [0099] 203 third electrically conductive structure [0100] 204 fourth electrically conductive structure [0101] 205 fifth electrically conductive structure [0102] 301 first electrical contact point [0103] 302 second electrical contact point [0104] 303 thermal contact point [0105] 304 third electrical contact point [0106] 305 fourth electrical contact point [0107] 401 first via [0108] 402 second via [0109] 403 third via [0110] 404 fourth via [0111] 405 fifth via [0112] 501 first breakthrough [0113] 502 second breakthrough [0114] 503 third breakthrough [0115] 600 Zener diode [0116] U electrical voltage