Fast optical switch and its applications in optical communication

Abstract

A fast optical switch can be fabricated/constructed, when a vanadium dioxide (VO.sub.2) and a two-dimensional (2-D) material is activated by either an electrical pulse (a voltage pulse or a current pulse) or a light pulse just to induce an insulator-to-metal phase transition (IMT) in vanadium dioxide. The applications of such a fast optical switch for an on-demand optical add-drop subsystem, integrating with (a) a light slowing/light stopping component (based on metamaterials and/or nanoplasmonic structures) and (b) with or without a wavelength converter are also described.

Claims

1. An optical switch comprising: a first optical waveguide and a second optical waveguide, wherein the first optical waveguide or the second optical waveguide comprises: a light slowing component or a light stopping component, wherein the light slowing component or the light stopping component comprises: metamaterials of negative refractive index or nanostructures, wherein the first optical waveguide is less than 5 microns in width, wherein the second optical waveguide is less than 5 microns in width, wherein a section of the first optical waveguide is substantially parallel within manufacturing tolerance to a section of the second optical waveguide, wherein the section of the first optical waveguide is optically coupled with an ultra thin-film of thickness less than 0.15 microns, wherein the section of the second optical waveguide is optically coupled with an ultra thin-film of thickness less than 0.15 microns, wherein the ultra thin-film comprises: vanadium dioxide, wherein the ultra thin-film is electrically coupled with two metal electrodes, wherein the ultra thin-film is receiving a voltage pulse or a current pulse via the two metal electrodes, just to induce insulator-to-metal (IMT) phase transition in vanadium dioxide.

2. The optical switch according to claim 1, further comprising a directionally coupled optical waveguides configuration or a multimode interference (MMI) coupler configuration or a Mach-Zehnder (MZ) configuration.

3. The optical switch according to claim 1, further comprising coupling with a wavelength multiplexer or a wavelength demultiplexer.

4. The optical switch according to claim 1, further comprising coupling with a wavelength tunable multiplexer or a wavelength tunable demultiplexer.

5. The optical switch according to claim 1, further comprising coupling with a wavelength tunable photonic crystal multiplexer or a wavelength tunable photonic crystal demultiplexer.

6. The optical switch according to claim 1, further comprising coupling with a wavelength converter.

7. The optical switch according to claim 6, comprising the wavelength converter, wherein the wavelength converter comprises As.sub.2S.sub.3 chalcogenide material or two-dimensional (2-D) photonic crystals As.sub.2S.sub.3 chalcogenide material or graphene on two-dimensional (2-D) photonic crystals of a silicon waveguide.

8. The optical switch according to claim 6, further comprising the wavelength converter, wherein the wavelength converter comprises a semiconductor optical amplifier or a quantum dot based semiconductor optical amplifier.

9. An optical switch comprising: a first optical waveguide and a second optical waveguide, wherein the first optical waveguide or the second optical waveguide comprises: a light slowing component or a light stopping component, wherein the light slowing component or the light stopping component comprises: metamaterials of negative refractive index or nanostructures, wherein the first optical waveguide is less than 5 microns in width, wherein the second optical waveguide is less than 5 microns in width, wherein a section of the first optical waveguide is substantially parallel within manufacturing tolerance to a section of the second optical waveguide, wherein the section of the first optical waveguide is optically coupled with an ultra thin-film of thickness less than 0.15 microns, wherein the section of the second optical waveguide is optically coupled with an ultra thin-film of thickness less than 0.15 microns, wherein the ultra thin-film comprises: vanadium dioxide, wherein the ultra thin-film is receiving a light pulse, just to induce insulator-to-metal (IMT) phase transition in vanadium dioxide.

10. The optical switch according to claim 9, further comprising an optical waveguide to propagate a beam of a light pulse and a focusing lens for focusing the beam of the light pulse, wherein an optical intensity of the beam of the light pulse is in a range of 0.1 mJ/cm.sup.2 to 50 mJ/cm.sup.2, wherein a pulse width of the beam of the light pulse is in a range of in the range of 0.001 nanoseconds to 0.1 nanoseconds.

11. The optical switch according to claim 9, further comprising an optical waveguide to propagate a beam of a light pulse and a metamaterial based lens for focusing the beam of the light pulse below diffraction resolution limit.

12. The optical switch according to claim 9, further comprising a directionally coupled optical waveguides configuration or a multimode interference (MMI) coupler configuration or a Mach-Zehnder (MZ) configuration.

13. The optical switch according to claim 9, further comprising coupling with a wavelength multiplexer or a wavelength demultiplexer.

14. The optical switch according to claim 9, further comprising coupling with a wavelength tunable multiplexer or a wavelength tunable demultiplexer.

15. The optical switch according to claim 9, further comprising coupling with a wavelength tunable photonic crystal multiplexer or a wavelength tunable photonic crystal demultiplexer.

16. The optical switch according to claim 9, further comprising coupling with a wavelength converter.

17. The optical switch according to claim 16, comprising the wavelength converter, wherein the wavelength converter comprises As.sub.2S.sub.3 chalcogenide material or two-dimensional (2-D) photonic crystals As.sub.2S.sub.3 chalcogenide material or graphene on two-dimensional (2-D) photonic crystals of a silicon waveguide.

18. The optical switch according to claim 16, further comprising the wavelength converter, wherein the wavelength converter comprises a semiconductor optical amplifier or a quantum dot based semiconductor optical amplifier.

19. An optical network processor system comprising: (a) an optical switch comprising: a first optical waveguide and a second optical waveguide, wherein the first optical waveguide or the second optical waveguide comprises: a light slowing component or a light stopping component, wherein the light slowing component or the light stopping component comprises: metamaterials of negative refractive index or nanostructures, wherein the first optical waveguide is less than 5 microns in width, wherein the second optical waveguide is less than 5 microns in width, wherein a section of the first optical waveguide is substantially parallel within manufacturing tolerance to a section of the second optical waveguide, wherein the section of the first optical waveguide is optically coupled with an ultra thin-film of thickness less than 0.15 microns, wherein the section of the second optical waveguide is optically coupled with an ultra thin-film of thickness less than 0.15 microns, wherein the ultra thin-film comprises: vanadium dioxide, wherein the ultra thin-film is electrically coupled with two metal electrodes, wherein the ultra thin-film is receiving a voltage pulse or a current pulse via the two metal electrodes, lust to induce insulator-to-metal (IMT) phase transition in vanadium dioxide; and (b) an optical add-drop subsystem, wherein the optical add-drop subsystem comprises: a wavelength multiplexer and a wavelength demultiplexer, wherein the optical switch is optically coupled with the optical add-drop subsystem.

20. The optical network processor system according to claim 19, further comprising a wavelength converter.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1A illustrates an embodiment of a fast optical switch in a directional coupler configuration based on vanadium dioxide (VO.sub.2) ultra-thin-film activated by an electrical pulse just to induce an insulator-to-metal phase transition (IMT) in vanadium dioxide ultra-thin-film.

(2) FIG. 1B illustrates a cross-sectional view of two metal electrodes on vanadium dioxide ultra-thin-film on the left region of the fast optical switch in the directional coupler configuration.

(3) FIG. 1C illustrates a cross-sectional view of two metal electrodes on vanadium dioxide ultra-thin-film on the right region of the fast optical switch in the directional coupler configuration.

(4) FIG. 2 illustrates an embodiment of an electronic subsystem to drive the fast optical switch based on vanadium dioxide ultra-thin-film activated by an electrical pulse.

(5) FIG. 3 illustrates an embodiment of a fast optical switch processor A comprising the fast optical switch (based on vanadium dioxide ultra-thin-film activated by an electrical pulse) in a matrix configuration.

(6) FIG. 4 illustrates an embodiment of the fast optical switch based on vanadium dioxide ultra-thin-film activated by a light pulse just to induce an insulator-to-metal phase transition in vanadium dioxide ultra-thin-film.

(7) FIG. 5 illustrates an embodiment of an electronic subsystem to drive the fast optical switch based on vanadium dioxide ultra-thin-film activated by a light pulse.

(8) FIG. 6 illustrates an embodiment of a fast optical switch processor B comprising the fast optical switch (based on vanadium dioxide ultra-thin-film activated by a light pulse) in a matrix configuration.

(9) FIG. 7 illustrates an on-demand optical add-drop subsystem (OADS) integrated with the fast optical switch (wherein the fast optical switch is based on vanadium dioxide ultra-thin-film activated by an electrical pulse).

(10) FIG. 8 illustrates an embodiment of an electronic subsystem to drive the on-demand optical add-drop subsystem integrated with the fast optical switch (wherein the fast optical switch is based on vanadium dioxide ultra-thin-film activated by an electrical pulse).

(11) FIG. 9 illustrates an embodiment of an optical network processor system A comprising the on-demand optical add-drop subsystem in a matrix configuration (wherein the on-demand optical add-drop subsystem further comprises the fast optical switch based on vanadium dioxide ultra-thin-film activated by an electrical pulse).

(12) FIG. 10 illustrates an on-demand optical add-drop subsystem integrated with the fast optical switch (wherein the fast optical switch is based on vanadium dioxide ultra-thin-film activated by a light pulse).

(13) FIG. 11 illustrates an embodiment of an electronic subsystem to drive the on-demand optical add-drop subsystem integrated with the fast optical switch (wherein the fast optical switch is based on vanadium dioxide ultra-thin-film activated by a light pulse).

(14) FIG. 12 illustrates an embodiment of an optical network processor system B, comprising the on-demand optical add-drop subsystem in a matrix configuration (wherein the on-demand optical add-drop subsystem further comprises the fast optical switch based on vanadium dioxide ultra-thin-film activated by a light pulse).

(15) FIG. 13A illustrates an embodiment of a wavelength converter based on a nonlinear four-wave mixing material.

(16) FIG. 13B illustrates another embodiment of a wavelength converter based on another nonlinear four-wave mixing material.

(17) FIG. 13C illustrates another embodiment of a wavelength converter based on another nonlinear four-wave mixing material.

(18) FIG. 14 illustrates an on-demand optical add-drop subsystem integrated with the fast optical switch (wherein the fast optical switch is based on vanadium dioxide ultra-thin-film activated by an electrical pulse) and a wavelength converter.

(19) FIG. 15 illustrates an embodiment of an electronic subsystem to drive the on-demand optical add-drop subsystem; integrated with the fast optical switch (wherein the fast optical switch is based on vanadium dioxide ultra-thin-film activated by an electrical pulse) and the wavelength converter.

(20) FIG. 16 illustrates an embodiment of an advanced optical network processor system C; comprising the on-demand optical add-drop subsystem in a matrix configuration (wherein the on-demand optical add-drop subsystem further comprises the fast optical switch based on vanadium dioxide ultra-thin-film activated by an electrical pulse) and the wavelength converter.

(21) FIG. 17 illustrates an on-demand optical add-drop subsystem integrated with the fast optical switch (wherein the fast optical switch is based on vanadium dioxide ultra-thin-film activated by a light pulse) and the wavelength converter.

(22) FIG. 18 illustrates an embodiment of an electronic subsystem to drive the on-demand optical add-drop subsystem integrated with the fast optical switch (wherein the fast optical switch is based on vanadium dioxide ultra-thin-film activated by a light pulse) and the wavelength converter.

(23) FIG. 19 illustrates an embodiment of an advanced optical network processor system D comprising the on-demand optical add-drop subsystem in a matrix configuration (wherein the on-demand optical add-drop subsystem further comprises the fast optical switch based on vanadium dioxide ultra-thin-film activated by a light pulse) and the wavelength converter.

DETAILED DESCRIPTION OF THE DRAWINGS

(24) Vanadium dioxide is broadly related to phase transition/change materials. Vanadium dioxide exhibits rapid (less than 10 nanoseconds) insulator-to-metal phase transition upon temperature increase. Vanadium dioxide shows an abrupt decrease of resistance when applied current or voltage exceeds a certain threshold value. This is an electric field-induced rapid phase transition/change.

(25) The rapid (less than 10 nanoseconds) insulator-to-metal phase transition can be utilized in conjunction with a coupled waveguide configuration (e.g., a directional coupler/multi-mode interference (MMI) coupler or Mach-Zehnder (MZ) configuration) to fabricate/construct a fast optical switch.

(26) The operational principle of a directional coupler is evanescent wave coupling in a configuration where two single-mode waveguides come close to each other along a coupling length.

(27) The dimension of the coupling length can depend on other parameters (e.g., overall dimension and switching speed of the optical switch). Furthermore, extinction ratio/power transfer ratio can depend on the index mismatch and the coupling parameters and the state of 120the vanadium dioxide ultra-thin-film.

(28) FIG. 1A illustrates an embodiment of 100Aa fast optical switch (in the directional coupler configuration) based on 120the vanadium dioxide ultra-thin-film activated by an electrical pulse.

(29) 100Athe fast optical switch (in the directional coupler configuration) can be fabricated/constructed on a silicon-on-insulator (SOI) substrate.

(30) But, other suitable substrate (e.g., a silicon-on-sapphire (SOS) substrate) can also be utilized.

(31) An electrical pulse can be a current pulse or a voltage pulse. 120the vanadium dioxide ultra-thin-film is receiving a voltage pulse or a current pulse via two electrodes just to induce an insulator-to-metal phase transition in the vanadium dioxide ultra-thin-film. For example, a square wave-shaped voltage pulse with a rise time of approximately 10 nanoseconds and a fall time of approximately 10 nanoseconds with a pulse duration of 500 nanoseconds can be utilized.

(32) In FIG. 1A, 100A denotes the fast optical switch and 120 denotes vanadium dioxide ultra-thin-film. 140A denotes the left region and 140B denotes the right region. 160A1 denotes the left metal electrode on 120the vanadium dioxide ultra-thin-film (on 140Athe left region) and 160A2 denotes the right metal electrode on 120the vanadium dioxide ultra-thin film (on 140Aleft region). 160B1 denotes the left metal electrode on 120the vanadium dioxide ultra-thin-film (on 140Bthe right region) and 160B2 denotes the right metal electrode on 120the vanadium dioxide ultra-thin-film (on 140Bthe right region).

(33) The thickness of 120the vanadium dioxide ultra-thin-film is less than 0.1 microns.

(34) 120the vanadium dioxide ultra-thin-film is approximately in the range of 0.01 microns.sup.2 to 2 microns.sup.2 in area on 140Athe left region.

(35) 120the vanadium dioxide ultra-thin-film is approximately in the range of 0.01 microns.sup.2 to 2 microns.sup.2 in area on 140Bthe right region.

(36) It should be noted that by nanoscaling the area of 120the vanadium dioxide ultra-thin-film in the range of approximately 0.01 microns.sup.2, an ultra-fast (approximately 0.1 nanoseconds) optical switch (activated by an electrical pulse) can be realized.

(37) The ridge width and ridge depth of 200the optical waveguide in 140Athe left region are approximately in the range of 2 microns to 5 microns and 0.1 microns to 1 micron respectively. Furthermore, both ends of 200the optical waveguide in 140Athe left region can be tapered out gradually for optical mode matching for a higher percentage of single-mode optical fiber coupling.

(38) The ridge width and ridge depth of 200the optical waveguide in 140Bthe right region are approximately in the range of 2 microns to 5 microns and 0.1 microns to 1 micron respectively. Furthermore, both ends of 200the optical waveguide in 140Bthe right region can be tapered out gradually for optical mode matching for a higher percentage of single-mode optical fiber coupling.

(39) The distance between 140Athe left region and 140Bthe right region is at or less than 5 microns.

(40) 100Athe fast optical switch is a 22 fast optical switch with two inputs and two outputs.

(41) The fabrication process of 100Athe fast optical switch (in a directional coupler configuration) is outlined below when 120the vanadium dioxide is an ultra-thin-film.

(42) Deposition of 120the vanadium dioxide ultra-thin-film of less than 0.1 microns in thickness by radio frequency (RF) magnetron sputtering from vanadium dioxide target under argon gas flow (approximately 100 sccm) and oxygen gas flow (approximately 10 sccm) at approximately in the range of 300 degrees centigrade to 550 degrees centigrade on a silicon-on-insulator substrate, having a silicon layer thickness of approximately in the range of 0.1 microns to 0.5 microns, having an insulator (silicon dioxide) layer thickness of approximately in the range of 0.25 microns to 3 microns, having a substrate thickness of approximately in the range of 350 microns to 675 microns.

(43) Alternatively, direct current (DC) magnetron sputtering from vanadium target under suitable argon gas flow and oxygen gas flow at approximately in the range of 300 degrees centigrade to 550 degrees centigrade can be utilized to deposit 120the vanadium dioxide ultra-thin-film.

(44) Alternatively, electron beam evaporation or laser-assisted electron beam evaporation from a high purity form of divanadium tetroxide (V.sub.2O.sub.4) powder can be utilized to deposit 120the vanadium dioxide ultra-thin-film.

(45) Alternatively, a low-temperature atomic layer epitaxial (ALE) process can be utilized to deposit 120the vanadium dioxide ultra-thin-film.

(46) Alternatively, a low-temperature molecular beam epitaxy (MBE) process can be utilized to deposit 120the vanadium dioxide ultra-thin-film.

(47) Additionally, a thermal annealing/rapid thermal annealing (RTA) process under suitable argon gas flow and oxygen gas flow can be utilized to enhance grain size and correct any oxygen deficiency of 120the vanadium dioxide ultra-thin-film.

(48) Additionally, an ultra-thin-film aluminum oxide in the range of 0.010 microns to 0.015 microns in thickness as a buffer layer prior to any deposition of 120the vanadium dioxide ultra-thin-film can lead to improved crystallinity and textures in 120the vanadium dioxide ultra-thin-film.

(49) Furthermore, deposition of an ultra-thin-film aluminum oxide in the range of 0.010 microns to 0.015 microns in thickness as a protective layer on 120the vanadium dioxide ultra-thin-film can be beneficial for future fabrication/processing steps.

(50) Reactive ion or ion etching of 120the vanadium dioxide ultra-thin-film and the silicon layer (of the silicon-on-insulator substrate) to approximately in the range of 2 microns to 5 microns in width and approximately in the range of 0.1 microns to 1 micron in depth to form 200an optical waveguide in 140Athe left region and its continued curved structure can be realized. Furthermore, both ends of 200the optical waveguide can be tapered out gradually for optical mode matching for a higher percentage of single-mode optical fiber coupling.

(51) Similarly, reactive ion or ion etching of 120the vanadium dioxide ultra-thin-film and the silicon layer (of the silicon-on-insulator substrate) to approximately in the range of 2 microns to 5 microns in width and approximately in the range of 0.1 microns to 1 micron in depth to form 200an optical waveguide in 140Bthe right region and its continued curved structure can be realized. Furthermore, both ends of 200the optical waveguide can be tapered out gradually for optical mode matching for a higher percentage of single-mode optical fiber coupling.

(52) Electron beam lithography and lift off of: a first metal layer of titanium/chromium and a second metal layer of gold for 160A1the left metal electrode and 160A2the right metal electrode on 120the vanadium dioxide ultra-thin-film (on 140Athe left region); and the first metal layer of titanium/chromium and the second metal layer of gold for 160B1the left metal electrode and 160B2the right metal electrode on 120the vanadium dioxide ultra-thin-film (on 140Bthe right region).

(53) The thickness of the first metal layer of titanium/chromium is approximately in the range of 0.010 microns to 0.02 microns.

(54) The thickness of the second metal layer of gold is approximately in the range of 0.25 microns to 0.35 microns. It should be noted that thickness of the second metal layer of gold can be optimized to reduce stress on 120the vanadium dioxide ultra-thin-film in mitigating stability/reliability issues with 120the vanadium dioxide ultra-thin-film.

(55) Furthermore, a high dielectric constant insulator (e.g., hafnium silicate, zirconium silicate, hafnium dioxide and zirconium dioxide) of approximate thickness of 0.005 microns can be fabricated/constructed to electrically insulate two electrodes on 140Athe left region and two electrodes on 140Bthe right region from 120the vanadium dioxide ultra-thin-film.

(56) Alternatively, a parallel plate capacitor with an air gap can be utilized instead of the high dielectric constant insulator. When a voltage pulse is applied across electrodes on a parallel plate capacitor, an electric field due to the voltage pulse is established across the air gap and a smaller electric field due to the voltage pulse is then coupled with 120the vanadium dioxide ultra-thin-film.

(57) It should be noted that the above fabrication steps can be modified in a number of ways (e.g., self alignment and/or planarization) for not heating adjacent silicon, as heating adjacent silicon can undesirably slow the switching speed of 100Athe optical switch.

(58) Dicing, testing and single-mode optical fiber pigtailing of 100Athe fast optical switch chips can be realized.

(59) Connecting the tested/pigtailed good 100Athe fast optical switch chips onto a printed electronics circuit board can be realized.

(60) In FIG. 1A, 180A denotes a first input port of an input wavelength and 180B denotes a second input port of an input wavelength. 200 denotes the optical waveguide. The input wavelength at 180Athe first input port can exit via 220Aan output exit, when 140Athe left region comprising 120the vanadium dioxide ultra-thin-film is not electrically activated by an electrical pulse on both 160A1the left metal electrode and 160A2the right metal electrode on 120the vanadium dioxide ultra-thin-film (on 140Athe left region).

(61) However, the input wavelength at 180Athe first input port can exit via 220Ban output exit, when 140Athe left region comprising 120the vanadium dioxide ultra-thin-film is electrically activated by an electrical pulse on both 160A1the left metal electrode and 160A2the right metal electrode on 120the vanadium dioxide ultra-thin-film (on 140Athe left region) just to induce an insulator-to-metal phase transition in 120the vanadium dioxide ultra-thin-film.

(62) Similarly, the input wavelength at 180Bthe second input port can exit via 200Aan output exit, when 140Bthe right region comprising the 120the vanadium dioxide ultra-thin-film is electrically activated by an electrical pulse on both 160B1the left metal electrode and 160B2the right metal electrode on 120the vanadium dioxide ultra-thin-film (on 140Bthe right region) just to induce an insulator-to-metal phase transition in 120the vanadium dioxide ultra-thin-film.

(63) 120the vanadium dioxide ultra-thin-film is receiving an electrical pulse just to induce an insulator-to-metal phase transition in 120the vanadium dioxide ultra-thin-film.

(64) Other coupler configurations (e.g., multimode interference configuration) can be realized by using an electrical pulse for inducing an insulator-to-metal phase transition in 120the vanadium dioxide ultra-thin-film.

(65) It should be noted that a cluster of vanadium dioxide particles (less than 0.5 microns in diameter) embedded in an ultra-thin-film of a polymeric material or in a mesh of metal nanowires can be utilized instead of 120the vanadium dioxide ultra-thin-film in fabricating/constructing 100Athe fast optical switch activated by an electrical pulse. The polymeric material can be either conducting, semiconducting or non-conducting. Thus, vanadium dioxide particles (less than 0.5 microns in diameter) embedded in an ultra-thin-film of a polymeric material or in a mesh of metal nanowires can receive an electrical pulse just to induce an insulator-to-metal phase transition in the cluster of vanadium dioxide particles (less than 0.5 microns in diameter).

(66) Furthermore, 120the vanadium dioxide ultra-thin-film can be replaced by a monolayer(s) of a two-dimensional (2-D) material (e.g., germanene, graphene, phosphorene, silicene and stanene) first, then followed by the vanadium dioxide ultra-thin-film last (option 1) or the vanadium dioxide ultra-thin-film first, then followed by a monolayer(s) of a two-dimensional material last (option 2) or a monolayer(s) of a two-dimensional material first then followed by the vanadium dioxide ultra-thin-film in the middle, then followed by a monolayer(s) of a two-dimensional material last (option 3). Integration of a monolayer(s) of a two-dimensional material can enable faster heat dissipation and/or electronic properties of the entire stacked materials for faster off switching time. The total thickness of the vanadium dioxide ultra-thin-film and a monolayer(s) of a two-dimensional (2-D) material are less than 0.15 microns. It should be noted that the two-dimensional material and/or vanadium dioxide can be in the form a quantum dot(s). It should be noted that vanadium dioxide can also be doped.

(67) FIG. 1B illustrates a cross-sectional view of 160A1the left metal electrode and 160A2the right metal electrode on 120the vanadium dioxide ultra-thin-film (on 140Athe left region), wherein 120the vanadium dioxide ultra-thin-film is on the silicon layer of the silicon-on-insulator substrate. 200 denotes the optical waveguide.

(68) FIG. 1C illustrates a cross-sectional view of 160B1the left metal electrode and 160B2the right metal electrode on 120the vanadium dioxide ultra-thin-film (140Bthe right region), wherein 120the vanadium dioxide ultra-thin-film is on the silicon layer of the silicon-on-insulator substrate. 200 denotes the optical waveguide.

(69) Furthermore, the silicon layer of the silicon-on-insulator substrate can be reactive ion or ion etched up to the silica layer of the silicon-on-insulator substrate.

(70) Metamaterials and/or nanoplasmonic structures endowed with special negative refractive index properties, surrounded by normal materials with positive refractive index properties, as a light (or optical signal(s)) slowing/light (or optical signal(s)) buffering component can slow (even stop) light/optical signal(s) at either input or output of 100Athe fast optical switch (based on 120the vanadium dioxide ultra-thin-film activated by an electrical pulse) for optical processing without any optical-electrical-optical (O-E-O) conversion to read header information of an optical (internet) packet optically. Thus, this can enable an all-optical network. Furthermore, the wavelength or frequency or color of a composite light (or composite optical signal(s)) can slow (even stop) at different spatial points (of metamaterials and/or nanoplasmonic structures endowed with special negative refractive index properties, surrounded by normal materials with positive refractive index properties) to have a trapped effect.

(71) Furthermore, a nanowire of a nonlinear material (e.g., cadmium sulfide) wrapped by a dielectric material, then wrapped by a silver shell at either input or output of 100Athe fast optical switch (based on 120the vanadium dioxide ultra-thin-film activated by an electrical pulse) can change the wavelength or frequency or color of light that passes through it. By confining light within the nonlinear material rather than at the interface between the nonlinear material and the silver shell, light intensity can be maximized, while changing the wavelength or frequency or color of light that passes through it.

(72) Additionally, by applying an electric field across a nanosccaled ring of a nonlinear material (e.g., cadmium sulfide), mixing of optical signals at high on or off ratio can be obtained. Such mixing of optical signals at high on or off ratio can act as an optical transistor.

(73) FIG. 2 illustrates an embodiment of 300Aan electronic subsystem to drive 100Athe fast optical switch (based on 120the vanadium dioxide ultra-thin-film activated by an electrical pulse).

(74) In FIG. 2, 240 denotes an external controller, 260 denotes a microprocessor/field programmable gate array (FPGA) and 280A denotes a drive electronics unit/module for 100Athe fast optical switch.

(75) 300Athe electronic subsystem integrates 240, 260 and 280A. 300Athe electronic subsystem is to drive 100Athe fast optical switch.

(76) 240the external controller can communicate serially with 260the microprocessor/field programmable gate array.

(77) FIG. 3 illustrates an embodiment of 400Aa fast optical switch processor A, comprising 100Athe fast optical switch in a matrix configuration (wherein 100Athe fast optical switch is based on 120the vanadium dioxide ultra-thin-film activated by an electrical pulse just to induce an insulator-to-metal phase transition in 120the vanadium dioxide ultra-thin-film).

(78) In FIG. 3, 400A denotes a fast optical switch processor A; 200 denotes the optical waveguide; 320 denotes an input single-mode optical fiber array; 300A denotes the electronic subsystem to drive 100Athe fast optical switch (based on 120the vanadium dioxide ultra-thin film activated by an electrical pulse); 340 denotes a thermoelectric cooler (TEC) to maintain 400Athe fast optical switch processor A at a specified temperature; 360 denotes a heat sink and 380 denotes an output single-mode optical fiber array.

(79) Thus, 400Athe fast optical switch processor A can switch a wavelength from any input fiber to any output fiber in less than 10 nanoseconds.

(80) FIG. 4 illustrates an embodiment of 100Ba fast optical switch (in the directional coupler configuration) based on the 120the vanadium dioxide ultra-thin-film, activated by a light pulse, on a silicon-on-insulator substrate.

(81) In FIG. 4, 100B denotes a fast optical switch, 120 denotes vanadium dioxide ultra-thin-film. 140A denotes the left region and 140B denotes the right region.

(82) The thickness of 120the vanadium dioxide ultra-thin-film is less than 0.1 microns.

(83) 120the vanadium dioxide ultra-thin-film is approximately in the range of 0.01 microns.sup.2 to 2 microns.sup.2 in area on 140Athe left region.

(84) 120the vanadium dioxide ultra-thin-film is approximately in the range of 0.01 microns.sup.2 to 2 microns.sup.2 in area on 140Bthe right region.

(85) It should be noted that by nanoscaling the area of 120the vanadium dioxide ultra-thin-film in the range of approximately 0.01 microns.sup.2, an ultrafast (approximately 0.1 nanoseconds) optical switch (activated by a light pulse) can be realized.

(86) The ridge width and ridge depth of 200the optical waveguide in 140Athe left region are approximately in the range of 2 microns to 5 microns and 0.1 microns to 1 micron respectively. Furthermore, both ends of 200the optical waveguide in 140Athe left region can be tapered out gradually for optical mode matching for a higher percentage of single-mode optical fiber coupling.

(87) The ridge width and ridge depth of 200the optical waveguide in 140Bthe right region are approximately in the range of 2 microns to 5 microns and 0.1 microns to 1 micron respectively. Furthermore, both ends of 200the optical waveguide in 140Bthe right region can be tapered out gradually for optical mode matching for a higher percentage of single-mode optical fiber coupling.

(88) The distance between 140Athe left region and 140Bthe right region is at or less than 5 microns.

(89) 100Bthe fast optical switch is a 22 fast optical switch with two inputs and two outputs.

(90) In FIG. 4, 180A denotes the first input port of the input wavelength. The input wavelength at 180Athe first input port can exit via 220Athe output exit, when 140Athe left region comprising 120the vanadium dioxide ultra-thin-film is not optically activated by a light pulse on 120the vanadium dioxide ultra-thin-film on 140Athe left region.

(91) However, the input wavelength at 180Athe first input port can exit via 220Bthe output exit, when 140Athe left region comprising 120the vanadium dioxide ultra-thin-film is optically activated by a light pulse (e.g., a light pulse from a mode locked semiconductor laser) on 120the vanadium dioxide ultra-thin-film on 140Athe left region just to induce an insulator-to-metal phase transition on 120the vanadium dioxide ultra-thin-film.

(92) Similarly, the input wavelength at 180Bthe second input port can exit via 200Athe output exit, when 140Bthe right region comprising 120the vanadium dioxide ultra-thin-film is optically activated by a light pulse (e.g., a light pulse from a mode locked semiconductor laser) on 120the vanadium dioxide ultra-thin-film on 140Bthe right region just to induce an insulator-to-metal phase transition on 120the vanadium dioxide ultra-thin-film.

(93) The intensity (optical power per unit area) of the light pulse is approximately in the range of 0.1 mJ/cm.sup.2 to 50 mJ/cm.sup.2. The pulse width of the light pulse is approximately in the range of 0.001 nanoseconds to 0.1 nanoseconds.

(94) The 120the vanadium dioxide ultra-thin-film is receiving a light pulse just to induce an insulator-to-metal phase transition in 120the vanadium dioxide ultra-thin-film.

(95) The light pulse can propagate through 460a waveguide and be focused by 480a lens onto 120the vanadium dioxide ultra-thin-film.

(96) However, either a focusing up configuration or a focusing down configuration is possible

(97) 460the waveguide is fabricated/constructed on 440a buffer layer, wherein 440the buffer layer is fabricated/constructed on 420a suitable substrate (e.g., a silicon-on-insulator substrate).

(98) One pulsed light source is required for 140Athe left region comprising 120the vanadium dioxide ultra-thin-film and another pulsed light source is required for 140Bthe right region; comprising 120the vanadium dioxide ultra-thin-film.

(99) Furthermore, 480a metamaterial-based lens can be utilized for focusing of the light pulse below the diffraction limit.

(100) Other coupler configurations (e.g., multimode interference configuration) can be realized by a light pulse for just inducing an insulator-to-metal phase transition in 120the vanadium dioxide ultra-thin-film.

(101) It should be noted that a cluster of vanadium dioxide particles (less than 0.5 microns in diameter) embedded in an ultra-thin-film of polymeric material or in a mesh of metal nanowires can be utilized, instead of 120the vanadium dioxide ultra-thin-film in fabricating/constructing 100Athe fast optical switch; activated by a light pulse. The polymeric material can be either conducting, semiconducting or non-conducting. Thus, vanadium dioxide particles (less than 0.5 microns in diameter) embedded in an ultra-thin-film of polymeric material or in a mesh of metal nanowires can receive a light pulse just to induce an insulator-to-metal phase transition in the cluster of vanadium dioxide particles (less than 0.5 microns in diameter).

(102) Furthermore, 120the vanadium dioxide ultra-thin-film can be replaced by a monolayer(s) of a two-dimensional (2-D) material (e.g., germanene, graphene, phosphorene, silicene and stanene) first, followed by the vanadium dioxide ultra-thin-film last (option 1) or the vanadium dioxide ultra-thin-film first, followed by a monolayer(s) of a two-dimensional material last (option 2) or a monolayer(s) of a two-dimensional material first, followed by the vanadium dioxide ultra-thin-film in the middle, followed by a monolayer(s) of a two-dimensional material last (option 3). Integration of a monolayer(s) of a two-dimensional material can enable faster heat dissipation and/or electronic properties of the entire stacked materials for faster off switching time. The total thickness of the vanadium dioxide ultra-thin-film and a monolayer(s) of a two-dimensional (2-D) material is less than 0.15 microns. It should be noted that the two-dimensional material and/or vanadium dioxide can be in the form a quantum dot(s). It should be noted that vanadium dioxide can also be doped.

(103) Metamaterials and/or nanoplasmonic structures endowed with special negative refractive index properties, surrounded by normal materials with positive refractive index properties, as a light (or optical signal(s)) slowing/light (or optical signal(s)) buffering component can slow (even stop) light/optical signal(s) at either input or output of 100Bthe fast optical switch (based on 120the vanadium dioxide, ultra-thin-film activated by a light pulse) for optical processing without any optical-electrical-optical (O-E-O) conversion to read header information of an optical (internet) packet optically. Thus, this can enable an all-optical network. Furthermore, the wavelength or frequency or color of a composite light (or composite optical signal(s)) can slow (even stop) at different spatial points (of metamaterials and/or nanoplasmonic structures endowed with special negative refractive index properties, surrounded by normal materials with positive refractive index properties) to have a trapped effect.

(104) Furthermore, a nanowire of a nonlinear material (e.g., cadmium sulfide) wrapped by a dielectric material, then wrapped by a silver shell at either input or output of 100Bthe fast optical switch (based on 120the vanadium dioxide ultra-thin-film activated by a light pulse) can change the wavelength or frequency or color of light that passes through it. By confining light within the nonlinear material rather than at the interface between the nonlinear material and the silver shell, light intensity can be maximized, while changing the wavelength or frequency or color of light that passes through it.

(105) Additionally, by applying an electric field across a nanosccaled ring of a nonlinear material (e.g., cadmium sulfide), mixing of optical signals at high on or off ratio can be obtained. Such mixing of optical signals at high on or off ratio can act as an optical transistor.

(106) FIG. 5 illustrates an embodiment of 300Ban electronic subsystem to drive 100Bthe fast optical switch (based on 120the vanadium dioxide ultra-thin-film activated by a light pulse).

(107) In FIG. 5, 240 denotes the external controller, 260 denotes the microprocessor/field programmable gate array, and 280B denotes a drive electronics unit/module for 100Bthe fast optical switch (based on 120the vanadium dioxide, ultra-thin-film activated by a light pulse).

(108) 300Bthe electronic subsystem integrates 240, 260 and 280B. 300Bthe electronic subsystem to drive 100Bthe fast optical switch (based on 120the vanadium dioxide ultra-thin-film activated by a light pulse).

(109) 240the external controller can communicate serially with 260the microprocessor/field programmable gate array.

(110) FIG. 6 illustrates an embodiment of 400Ba fast optical switch processor B, comprising 100Bthe fast optical switch in a matrix configuration (wherein 100Bthe fast optical switch is based on 120the vanadium dioxide ultra-thin-film activated by a light pulse just to induce an insulator-to-metal phase transition in vanadium dioxide ultra-thin-film).

(111) In FIG. 6, 400B denotes a fast optical switch processor B; 200 denotes the optical waveguide; 320 denotes the input single-mode optical fiber array; 300B denotes the electronic subsystem to drive 100Bthe fast optical switch (based on 120the vanadium dioxide ultra-thin-film activated by a light pulse); 340 denotes the thermoelectric cooler to maintain 400Bthe optical switch processor B at a specified temperature; 360 denotes the heat sink, and 380 denotes the output single-mode optical fiber array.

(112) Thus, 400Bthe fast optical switch processor B can switch a wavelength from any input fiber to any output fiber in less than 10 nanoseconds.

(113) FIG. 7 illustrates 660Aan on-demand optical add-drop subsystem integrated with 100Athe fast optical switch (wherein 100Athe fast optical switch is based on 120the vanadium dioxide ultra-thin-film activated by an electrical pulse).

(114) In FIG. 7, all input wavelengths from 320an input optical fiber can be transmitted via 200Aan optical waveguide and amplified by 500an erbium doped waveguide amplifier (EDWA) integrated with a 980-nm pump laser, tapped by 520a tap coupler to measure wavelengths by 540a spectrophotometer. A few wavelengths can proceed to 560A/560B/560Ca first wavelength demultiplexer 1 and then exit to the drop ports. Other express wavelengths can proceed to 560A/560B/560Ca second wavelength demultiplexer 2 for demultiplexing then as selective inputs to 100Athe fast optical switch.

(115) It should be noted that a semiconductor optical amplifier can be utilized instead of 500the erbium doped waveguide amplifier integrated with a 980-nm pump laser 500.

(116) It should be noted that arrayed waveguide gratings (AWG) based wavelength multiplexers/demultiplexers can also be utilized.

(117) 560A denotes a fixed (wavelength) demultiplexer, 560B denotes a (wavelength) tunable demultiplexer and 560C denotes a (wavelength) tunable one-dimensional (1-D) photonic crystal based demultiplexer.

(118) An array of rapidly wavelength tunable lasers can provide a set of new wavelengths to add ports. The output (wavelengths) of 560A/560B/560Cthe second wavelength demultiplexer 2 and these newly added wavelengths can be switched by an array of 100Asthe fast optical switches.

(119) Switched wavelengths from 100Asthe fast optical switches can be modulated by 580soptical modulators (e.g., silicon traveling-waveguide/graphene-on-silicon optical modulators).

(120) The optical power output of 580the optical modulator can be controlled by 500the erbium doped waveguide amplifier integrated with a 980-nm pump laser, 600a variable optical attenuator (VOA) (e.g., a PLZT-based variable optical attenuator) and 620a photodiode.

(121) The modulated wavelengths (or modulated optical signals) can be independently controlled at a specified optical power and then multiplexed by 640A/640B/640Ca multiplexer. Thus, independent control of each wavelength can enable an approximately flat optical power curve for all output wavelengths at 380an output optical fiber.

(122) 640A denotes a fixed (wavelength) multiplexer, 640B denotes a (wavelength) tunable multiplexer and 640C denotes a (wavelength) tunable one-dimensional photonic crystal-based multiplexer.

(123) A wavelength tunable multiplexer/demultiplexer includes a control circuit and one or more controls such as heaters thermally coupled and/or refractive index changing electrical paths electrically coupled to waveguides of the multiplexer/demultiplexer.

(124) The control circuit is in signal communication with one or more controls and also includes a microprocessor/field programmable gate array coupled with an electronic memory component. The control circuit receives an identification signal and adjusts the control in response to the identification signal and based on parameter values stored in the electronic memory component.

(125) Alternatively, a voltage tunable multiplexer/demultiplexer can be realized when the material composition of the multiplexer/demultiplexer is a crystalline semiconductor (e.g., indium phosphide) rather than silica. Furthermore, the transmission characteristics of the tunable multiplexer/demultiplexer can be varied depending on external control input(s).

(126) FIG. 8 illustrates an embodiment of 300Can electronic subsystem to drive 660Athe on-demand optical add-drop subsystem, integrated with 100Athe fast optical switch (wherein 100Athe fast optical switch is based on 120the vanadium dioxide ultra-thin-film activated by an electrical pulse).

(127) In FIG. 8, 240 denotes the external controller, 260 denotes the microprocessor/field programmable gate array and 280C denotes a drive electronics unit/module for 660Athe on-demand optical add-drop subsystem, integrated with 100Athe fast optical switch (wherein 100Athe fast optical switch is based on 120the vanadium dioxide ultra-thin-film activated by an electrical pulse).

(128) 300Cthe electronic subsystem integrates 240, 260 and 280C. 300Cthe electronic subsystem to drive 660A.

(129) 240the external controller can communicate serially with 260the microprocessor/field programmable gate array.

(130) FIG. 9 illustrates an embodiment of 680Aan optical network processor system, comprising 660Athe on-demand optical add-drop subsystem in a matrix configuration, wherein 660Athe on-demand optical add-drop subsystem comprises 100Athe fast optical switch is based on 120the vanadium dioxide ultra-thin-film activated by an electrical pulse just to induce an insulator-to-metal phase transition in 120the vanadium dioxide ultra-thin-film.

(131) In FIG. 9, 680A denotes an optical network processor system A; 200A denotes the optical waveguide; 320 denotes the input single-mode optical fiber array; 300C denotes the electronic subsystem to drive 660Athe on-demand optical add-drop subsystem; 340 denotes the thermoelectric cooler to maintain 680Athe optical network processor system A at a specified temperature; 360 denotes the heat sink and 380 denotes the output single-mode optical fiber array.

(132) Thus, 680Athe optical network processor system A, demultiplex, multiplex can switch a wavelength from any input fiber to any output fiber.

(133) FIG. 10 illustrates 660Ban on-demand optical add-drop subsystem, integrated with 100Bthe fast optical switch (wherein 100Bthe fast optical switch is based on 120the vanadium dioxide ultra-thin-film activated by a light pulse).

(134) In FIG. 10, all input wavelengths from 320the input optical fiber can be transmitted via 200Aan optical waveguide and amplified by 500the erbium doped waveguide amplifier integrated with a 980-nm pump laser, tapped by 520the tap coupler to measure wavelengths by 540the spectrophotometer. A few wavelengths can proceed to 560A/560B/560Cthe first wavelength demultiplexer 1 and then exit to the drop ports. Other express wavelengths can proceed to 560A/560B/560Cthe second wavelength demultiplexer 2 for demultiplexing, then as selective inputs to 100Bthe fast optical switch.

(135) An array of rapidly wavelength tunable lasers can provide a set of new wavelengths to the add ports. The output (wavelengths) of 560A/560B/560Cthe second wavelength demultiplexer 2 and these newly added wavelengths can be switched by an array of 100Bsthe fast optical switches.

(136) Switched wavelengths from 100Bsthe fast optical switches can be modulated by an array of 580sthe optical modulators.

(137) The optical power output of 580the optical modulator can be controlled by 500the erbium doped waveguide amplifier integrated with a 980-nm pump laser, 600the variable optical attenuator and 620the photodiode.

(138) The modulated wavelengths (or modulated optical signals) can be independently controlled at a specified optical power and then multiplexed by 640A/640B/640Cthe multiplexer. Thus, independent control of each wavelength can enable an approximately flat optical power curve for all output wavelengths at 380the output optical fiber.

(139) FIG. 11 illustrates an embodiment of 300Dan electronic subsystem to drive 660Bthe on-demand optical add-drop subsystem, integrated with 100Bthe fast optical switch (wherein 100Bthe fast optical switch is based on 120the vanadium dioxide ultra-thin-film activated by a light pulse).

(140) In FIG. 11, 240 denotes the external controller, 260 denotes the microprocessor/field programmable gate array and 280D denotes a drive electronics unit/module for 660Bthe on-demand optical add-drop subsystem, integrated with 100Bthe fast optical switch (wherein 100Bthe fast optical switch is based on 120the vanadium dioxide ultra-thin-film activated by a light pulse).

(141) 300Dthe electronic subsystem integrates 240, 260 and 280D. 300Dthe electronic subsystem is to drive 660B.

(142) 240the external controller can communicate serially with 260the microprocessor/field programmable gate array.

(143) FIG. 12 illustrates an embodiment of 680Ban optical network processor system B, comprising 660Bthe on-demand optical add-drop subsystem in a matrix configuration, wherein 660Bthe on-demand optical add-drop subsystem comprises 100Bthe fast optical switch is based on 120the vanadium dioxide ultra-thin-film activated by a light pulse just to induce an insulator-to-metal phase transition in 120the vanadium dioxide ultra-thin-film.

(144) In FIG. 12, 680B denotes the optical network processor system B; 200A denotes the optical waveguide; 320 denotes the input single-mode optical fiber array; 300D denotes the electronic subsystem to drive 660Bthe on-demand optical add-drop subsystem; 340 denotes the thermoelectric cooler to maintain; 680Bthe optical network processor system B at a specified temperature; 360 denotes the heat sink and 380 denotes the output single-mode optical fiber array.

(145) Thus, 680Bthe optical network processor system B, demultiplex, multiplex can switch a wavelength from any input fiber to any output fiber.

(146) FIG. 13A illustrates 820Aan embodiment of a wavelength converter, wherein 760a coupler connects to 700an input optical signal and 720a pump laser via 740a coupler waveguide. 760the coupler is optically coupled with 780AAs.sub.2S.sub.3 chalcogenide, a four-wave mixing non-linear material. The output of 780AAs.sub.2S.sub.3 chalcogenide, a four-wave mixing non-linear material, can be optically coupled with 800a specific filter block. The output of 800the filter block is the converted wavelength.

(147) FIG. 13B illustrates 820Ban embodiment of a wavelength converter, wherein 760a coupler connects to 700an input optical signal and 720a pump laser via 740a coupler waveguide. 760the coupler is optically coupled with 780Btwo-dimensional photonic crystal-based As.sub.2S.sub.3 chalcogenide, a four-wave mixing non-linear material. The output of 780Btwo-dimensional photonic crystal-based As.sub.2S.sub.3 chalcogenide, a four-wave mixing non-linear material, can be optically coupled with 800the specific filter block. The output of 800the filter block is the converted wavelength.

(148) FIG. 13C illustrates 820Can embodiment of a wavelength converter, wherein 760a coupler connects to 700an input optical signal and 720a pump laser via 740a coupler waveguide. 760the coupler is optically coupled with 780Cgraphene on two-dimensional photonic crystal silicon waveguide, a four-wave mixing non-linear material. The output of 780Cgraphene on two-dimensional photonic crystal silicon waveguide, a four-wave mixing non-linear material, can be optically coupled with 800the specific filter block. The output of 800the filter block is the converted wavelength.

(149) Alternatively, a wavelength converter can be fabricated/constructed utilizing a semiconductor optical amplifier or a quantum dot-based semiconductor optical amplifier (QD-SOA).

(150) FIG. 14 illustrates 840Aan on-demand optical add-drop subsystem, integrated with 100Athe fast optical switch (wherein 100Athe fast optical switch is based on 120the vanadium dioxide ultra-thin-film activated by an electrical pulse) and 820A/B/Cthe wavelength converter.

(151) In FIG. 14, all input wavelengths from 320the input optical fiber can be transmitted via 200Aan optical waveguide and amplified by 500the erbium doped waveguide amplifier integrated with a 980-nm pump laser, tapped by 520the tap coupler to measure wavelengths by 540the spectrophotometer. A few wavelengths can proceed to 560A/560B/560Cthe first wavelength demultiplexer 1 and then exit-to the drop ports. Other express wavelengths can proceed to 560A/560B/560Cthe second wavelength demultiplexer 2 for demultiplexing, then as selective inputs to 100Athe fast optical switch.

(152) An array of rapidly wavelength tunable lasers can provide a set of new wavelengths to the add ports. The output (wavelengths) of 560A/560B/560Cthe second wavelength demultiplexer 2 can converted in wavelength by an array of 820A/B/Csthe wavelength converters. Thus, the converted wavelengths from the array 820A/B/Csthe wavelength converters and these newly added wavelengths can be switched by an array of 100Asthe fast optical switches.

(153) Switched wavelengths from 100Asthe fast optical switches can be modulated by an array of 580sthe optical modulators.

(154) The optical power output of 580the optical modulator can be controlled by 500the erbium doped waveguide amplifier integrated with a 980-nm pump laser, 600the variable optical attenuator and 620the photodiode

(155) The modulated wavelengths (or modulated optical signals) can be independently controlled at a specified optical power and then multiplexed by 640A/640B/640Cthe multiplexer. Thus, independent control of each wavelength can enable approximately flat optical power curve for all output wavelengths at 380the output optical fiber.

(156) FIG. 15 illustrates an embodiment of 300Ean electronic subsystem to drive 840Athe on-demand optical add-drop subsystem, integrated with 100Athe fast optical switch (wherein 100Athe fast optical switch is based on 120the vanadium dioxide ultra-thin-film activated by an electrical pulse) and 820A/B/Cthe wavelength converter.

(157) In FIG. 15, 240 denotes the external controller, 260 denotes the microprocessor/field programmable gate array and 280E denotes a drive electronics unit/module for 840Athe on-demand optical add-drop subsystem, integrated with 100Athe fast optical switch (wherein 100Athe fast optical switch is based on 120the vanadium dioxide ultra-thin-film activated by an electrical pulse) and 820A/B/Cthe wavelength converter.

(158) 300Ethe electronic subsystem integrates 240, 260 and 280E. 300Ethe electronic subsystem to drive 840A.

(159) 240the external controller can communicate serially with 260the microprocessor/field programmable gate array

(160) FIG. 16 illustrates an embodiment of 860Aan advanced optical network processor system C in a matrix configuration, wherein 860Athe advanced optical network processor system C comprising840Athe on-demand optical add-drop subsystem, wherein 840Athe on-demand optical add-drop subsystem comprises (a) 100Athe fast optical switch based on 120the vanadium dioxide ultra-thin-film activated by an electrical pulse just to induce an insulator-to-metal phase transition in 120the vanadium dioxide ultra-thin-film and (b) 820A/B/Cthe wavelength converter.

(161) In FIG. 16, 860A denotes the advanced optical network processor system C; 200A denotes the optical waveguide; 320 denotes the input single-mode optical fiber array; 300E denotes the electronic subsystem to drive 840Athe advanced optical network processor system C; 340 denotes the thermoelectric cooler to maintain 860Athe advanced optical network processor system C at a specified temperature; 360 denotes the heat sink and 380 denotes the output single-mode optical fiber array.

(162) Thus, 860Athe advanced optical network processor system C can demultiplex, multiplex, convert and switch a wavelength from any input fiber to any output fiber.

(163) FIG. 17 illustrates 840Ban on-demand optical add-drop subsystem, integrated with 100Bthe fast optical switch (wherein 100Bthe fast optical switch is based on 120the vanadium dioxide ultra-thin-film activated by a light pulse) and 820A/B/Cthe wavelength converter.

(164) In FIG. 17, all input wavelengths from 320the input optical fiber can be transmitted via 200Aan optical waveguide and amplified by 500the erbium doped waveguide amplifier integrated with a 980-nm pump laser, tapped by 520the tap coupler to measure wavelengths by 540the spectrophotometer. A few wavelengths can proceed to 560A/560B/560Cthe first wavelength demultiplexer 1 and then exit to the drop ports. Other express wavelengths can proceed to 560A/560B/560Cthe second wavelength demultiplexer 2 for demultiplexing, then as selective inputs to 100Bthe fast optical switch.

(165) An array of rapidly wavelength tunable lasers can provide a set of new wavelengths to the add ports. The output (wavelengths) of 560A/560B/560Cthe second wavelength demultiplexer 2 can be converted in wavelength by an array of 820A/B/Csthe wavelength converters. Thus, the converted wavelengths from the array 820A/B/Csthe wavelength converters and these newly added wavelengths can be switched by an array of 100Bsthe fast optical switches.

(166) Switched wavelengths from 100Bsthe fast optical switches can be modulated by an array of 580sthe optical modulators.

(167) The optical power output of 580the optical modulator can be controlled by 500the erbium doped waveguide amplifier integrated with a 980-nm pump laser, 600the variable optical attenuator and 620the photodiode

(168) The modulated wavelengths (or modulated optical signals) can be independently controlled at a specified optical power and then multiplexed by 640A/640B/640Cthe multiplexer. Thus, independent control of each wavelength can enable an approximately flat optical power curve for all output the wavelengths at 380the output optical fiber.

(169) FIG. 18 illustrates an embodiment of 300Fan electronic subsystem to drive 840Bthe on-demand optical add-drop subsystem, integrated with 100Bthe fast optical switch (wherein 100Bthe fast optical switch is based on 120the vanadium dioxide ultra-thin-film activated by a light pulse) and 820A/B/Cthe wavelength converter.

(170) In FIG. 18, 240 denotes the external controller, 260 denotes the microprocessor/field programmable gate array and 280F denotes a drive electronics unit/module for 840Bthe on-demand optical add-drop subsystem, integrated with 100Bthe fast optical switch (wherein 100Bthe fast optical switch is based on 120the vanadium dioxide ultra-thin-film activated by a light pulse) and 820A/B/Cthe wavelength converter.

(171) 300Fthe electronic subsystem integrates 240, 260 and 280F. 300Fthe electronic subsystem is to drive 840B.

(172) 240the external controller can communicate serially with 260the microprocessor/field programmable gate array

(173) FIG. 19 illustrates an embodiment of 860Ban advanced optical network processor system D in a matrix configuration, wherein 860Bthe advanced optical network processor system D comprising840Bthe on-demand optical add-drop subsystem, wherein 840Bthe on-demand optical add-drop subsystem comprises (a) 100Bthe fast optical switch is based on 120the vanadium dioxide ultra-thin-film activated by a light pulse just to induce an insulator-to-metal transition in 120the vanadium dioxide ultra-thin-film, and (b) 820A/B/Cthe wavelength converter.

(174) In FIG. 19, 860B denotes the advanced optical network processor system D; 200A denotes the optical waveguide; 320 denotes the input single-mode optical fiber array; 300F denotes the electronic subsystem to drive 840Bthe advanced optical network processor system D; 340 denotes the thermoelectric cooler to maintain 860Bthe advanced optical network processor system D at a specified temperature; 360 denotes the heat sink and 380 denotes the output single-mode optical fiber array.

(175) Thus, 860Bthe advanced optical network processor system D can demultiplex, multiplex, convert and switch a wavelength from any input fiber to any output fiber.

(176) 100A/100B can be integrated with a semiconductor laser/widely tunable semiconductor laser/widely tunable fast switching semiconductor laser at 180Athe input waveguide and/or at 180Bthe input waveguide for higher functionality. Such integration can include coupling from waveguide to waveguide via a collimating lens, wherein the collimating lens can be suitably positioned by a microelectro-mechanical system (MEMS)/nanoelectromechanical system (NEMS) based actuator.

(177) 100A/100B can be integrated with an array of semiconductor lasers/widely tunable semiconductor lasers/widely tunable fast switching semiconductor lasers at 180Athe input waveguide and/or at 180Bthe input waveguide for higher functionality. Such integration can include coupling of the array of semiconductor lasers/widely tunable semiconductor lasers/widely tunable fast switching semiconductor lasers to 180Athe input waveguide and/or at 180Bthe input waveguide via a microelectromechanical system/nanoelectromechanical system-based tilt mirror.

(178) 400A, 400B, 680A, 680B, 860A and 860B can be integrated with microring resonator filters and/or wavelength tunable optical dispersion compensators.

(179) Furthermore, 400A, 400B, 680A, 680B, 860A and 860B can be integrated with biplexer filters and/or triplexer filters.

(180) 400A or 400B can be integrated with a log.sub.2 N demultiplexer for optical packet switched optical networks, where the switching delay is critical for high performance. A log.sub.2 N demultiplexer can consist of rectangular-shaped periodic frequency filters connected in series, wherein the rectangular-shaped periodic frequency filters can be formed in a one-dimensional photonic crystal structure on a ridge waveguide.

(181) Flip-chip bonding was developed as an alternative to wire bonding. In flip-chip bonding, components are flipped upside-down and placed on an array of solder bumps that form the connection between a device and circuit. 400A, 400B, 680A, 680B, 860A and 860B can be packaged utilizing flip-chip bonding onto a precise silicon-on-insulator substrate.

(182) Single-mode optical fibers can be aligned passively with precise metal alignment pins seated into v-grooves on the precise substrate. The precise metal alignment pins can be utilized top mate with a pluggable optical fiber connector integrated with a molded plastic lens. Alternatively, an array of multi-mode optical fibers can be used instead of an array of single-mode optical fibers for short distance (e.g., LAN) applications.

(183) In the above disclosed specifications / has been used to indicate an or and real-time means near real-time in practice.

Preferred Embodiments & Scope of the Invention

(184) Any example in the above disclosed specifications is by way of an example only and not by way of any limitation.

(185) The best mode requirement requires an inventor(s) to disclose the best mode contemplated by him/her, as of the time he/she executes the application, of carrying out the invention. . . . [T]he existence of a best mode is a purely subjective matter depending upon what the inventor(s) actually believed at the time the application was filed. See Bayer AG v. Schein Pharmaceuticals, Inc. The best mode requirement still exists under the America Invents Act (AIA). At the time of the invention, the inventor(s) described preferred best mode embodiments of the present invention. The sole purpose of the best mode requirement is to restrain the inventor(s) from applying for a patent, while at the same time concealing from the public preferred embodiments of their inventions, which they have in fact conceived. The best mode inquiry focuses on the inventor(s)' state of mind at the time he/she filed the patent application, raising a subjective factual question. The specificity of disclosure required to comply with the best mode requirement must be determined by the knowledge of facts within the possession of the inventor(s) at the time of filing the patent application. See Glaxo, Inc. v. Novopharm LTD., 52 F.3d 1043, 1050 (Fed. Cir. 1995).

(186) The above disclosed specifications are the preferred best mode embodiments of the present invention. However, they are not intended to be limited only to the preferred best mode embodiments of the present invention. Numerous variations and/or modifications are possible within the scope of the present invention. Accordingly, the disclosed preferred best mode embodiments are to be construed as illustrative only. Those who are skilled in the art can make various variations and/or modifications (e.g., a light emitting diode instead of a laser) without departing from the scope and spirit of this invention. It should be apparent that features of one embodiment can be combined with one or more features of another embodiment to form a plurality of embodiments. The inventor(s) of the present invention is not required to describe each and every conceivable and possible future embodiment in the preferred best mode embodiments of the present invention. See SRI Int'l v. Matsushita Elec. Corp. of America, 775F.2d 1107, 1121, 227 U.S.P.Q. (BNA) 577, 585 (Fed. Cir. 1985) (enbanc). The scope and spirit of this invention shall be defined by the claims and the equivalents of the claims only. The exclusive use of all variations and/or modifications within the scope of the claims is reserved. The general presumption is that claim terms should be interpreted using their plain and ordinary meaning. See Oxford Immunotec Ltd. v. Qiagen, Inc. et al., Action No. 15-cv-13124-NMG. Unless a claim term is specifically defined in the preferred best mode embodiments, then a claim term has an ordinary meaning, as understood by a person with an ordinary skill in the art, at the time of the present invention. As noted long ago: Specifications teach. Claims claim. See Rexnord Corp. v. Laitram Corp., 274 F.3d 1336, 1344 (Fed. Cir. 2001). The rights of claims (and rights of the equivalents of the claims under the Doctrine of Equivalents-meeting the Triple Identity Test (a) performing substantially the same function, (b) in substantially the same way and (c) yielding substantially the same result. See Crown Packaging Tech., Inc. v. Rexam Beverage Can Co., 559 F.3d 1308, 1312 (Fed. Cir. 2009)) of the present invention are not narrowed or limited by the selective imports of the specifications (of the preferred embodiments of the present invention) into the claims. The term means was not used nor intended nor implied in the disclosed preferred best mode embodiments of the present invention. Thus, the inventor(s) has not limited the scope of the claims as mean plus function. Additionally, apparatus claims are not necessarily indefinite for using functional language . . . [f]unctional language may also be employed to limit the claims without using the means-plus-function format. See Microprocessor Enhancement Corp. v. Texas Instruments Inc.