Strip-type substrate for producing chip card modules

Abstract

A strip-type substrate includes a foil having a number of substrate units for producing chip card modules. The substrate has an inner face for at least partial direct or indirect contacting of a semiconductor chip and an outer face lying opposite the inner face. The foil includes of steel, in particular high-grade steel, and a first layer of nickel or a nickel alloy on at least some sections of the outer face.

Claims

1. A strip-type substrate comprising: a foil comprising a plurality of substrate units, each substrate unit for producing a chip card module; an inner side for direct or indirect contact with a semiconductor chip at least in sections; an outer side formed opposite the inner side; and a first layer formed on the outer side, the first layer comprising, at least in sections, nickel or a nickel alloy; wherein the foil is formed from austenitic high-grade steel; wherein the foil comprises a thickness of 15 m to 35 m.

2. The substrate as claimed in claim 1, further comprising a second layer formed on the inner side, the second layer comprising, at least in sections, nickel or the nickel alloy.

3. The substrate as claimed in claim 2, wherein the first layer or the second layer has a layer thickness selected from the group of 0.1-5.0 m, 0.5-3.0 m, or 1.0-2.0 m.

4. The substrate as claimed in claim 2, further comprising a third layer formed, at least in sections, on the second layer; wherein the third layer comprises silver or a silver alloy.

5. The substrate as claimed in claim 4, wherein the third layer has a layer thickness selected from the group of 0.1-5.0 m, 0.5-3.0 m, or 1.0-2.0 m.

6. The substrate as claimed in claim 1, wherein the nickel alloy is a nickel-palladium alloy (NiPd) having a palladium proportion selected from the group of 0.1-30.0%, 5.0-25.0%, or 10.0-20.0%.

7. A chip card module comprising: a substrate unit comprising a foil comprising a plurality of substrate units, each substrate unit for producing a chip card module; an inner side for direct or indirect contact with a semiconductor chip at least in sections; an outer side formed opposite the inner side; and a first layer formed on the outer side, the first layer comprising, at least in sections, nickel or a nickel alloy; wherein the foil is formed from austenitic high-grade steel; wherein the foil comprises a thickness of 15 m to 35 m.

8. The chip card module as claimed in claim 7, further comprising a second layer formed on the inner side, the second layer comprising, at least in sections, nickel or the nickel alloy.

9. The chip card module as claimed in claim 8, wherein the nickel alloy is a nickel-palladium alloy (NiPd) having a palladium proportion selected from the group of 0.1-30.0%, 5.0-25.0%, or 10.0-20.0%.

10. The chip card module as claimed in claim 8, wherein the first layer or the second layer has a layer thickness selected from the group of 0.1-5.0 m, 0.5-3.0 m, or 1.0-2.0 m.

11. The chip card module as claimed in claim 8, further comprising a third layer formed, at least in sections, on the second layer; wherein the third layer comprises silver or a silver alloy.

12. The chip card module as claimed in claim 11, wherein the third layer has a layer thickness selected from the group of 0.1-5.0 m, 0.5-3.0 m, or 1.0-2.0 m.

13. An electronic device selected from the group of a chip card, a health card, a bank card, a ticket for public transport, a hotel card, an identity card, a passport, a paper-sheet-like card, an entrance card, the electronic card comprising: a chip card module as claimed in claim 7.

14. A dual interface card comprising: a chip card module as claimed in claim 7.

15. A method for producing a strip-type substrate, the strip-type substrate comprising a foil comprising a plurality of substrate units, each substrate unit for producing a chip card module; an inner side for direct or indirect contact with a semiconductor chip at least in sections; an outer side formed opposite the inner side; and a first layer formed on the outer side, the first layer comprising, at least in sections, nickel or a nickel alloy; wherein the foil is formed from austenitic high-grade steel; wherein the foil comprises a thickness of 15 m to 35 m; the method comprising the steps of: introducing structures of the substrate units into the foil; coating electrolytically the foil with the nickel or nickel alloy to form the first layer, wherein the coating is performed by completely coating the foil.

16. The method as claimed in claim 15, wherein the foil coated with nickel or a nickel alloy is coated at least in sections with silver or a silver alloy at least in sections on one side an inner side for direct or indirect contact with a semiconductor chip.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) The invention is explained more specifically below with further details on the basis of exemplary embodiments with reference to the enclosed schematic drawings.

(2) In said drawings:

(3) FIG. 1a shows a strip-type substrate having a plurality of substrate units for producing chip card modules, wherein the outer side is visible in this view;

(4) FIG. 1b shows the strip-type substrate in accordance with FIG. 1a with a view of the inner side; and

(5) FIG. 2 shows a schematic section through the strip-type substrate in accordance with FIGS. 1a and 1b.

DETAILED DESCRIPTION OF THE INVENTION

(6) The basic structure of the strip-type substrate 10 as illustrated in FIG. 1 may be realized in the context of the invention. However, the invention is not restricted to the basic structure illustrated in FIG. 1a, in particular the structuring of the strip-type substrate 10. The invention also encompasses substrates that are structured with other geometries.

(7) The strip-type substrate 10 in accordance with FIGS. 1a and 1b is a preliminary product that is processed further to form a package or a chip card module. The illustrated structures in FIGS. 1a and 1b are also present in the further processed chip card module or in the end product, for example a chip card or generally in an electronic device.

(8) Specifically, the strip-type substrate 10 in accordance with FIG. 1a is constructed as follows. The strip-type substrate 10 is produced from a flexible foil 15. The flexible foil 15 is formed from hard-rolled austenitic high-grade steel. The foil 15 has a plurality of substrate units 11, which are singulated for producing chip card modules in a later method step.

(9) The substrate units 11 are constructed identically in each case. The illustration in accordance with FIG. 1a involves a view of the outer side 12 of the strip-type substrate 10. The outer side 12 is formed opposite the inner side 13 (visible in FIG. 1b) of the strip-type substrate 10. The outer side 12 of the strip-type substrate 10 denotes that side of the strip-type substrate 10 on whose side the outer sides 12 of the substrate units 11 are formed. The outer sides 12 of the respective substrate units 11 are the contact areas or metallization areas of chip card modules. These are known as gold- to copper-like elements in standard chip cards.

(10) Structures 16 of the substrate units 11 are discernible on the outer side 12 of the strip-type substrate 10. The individual contact areas of the substrate units 11 are formed with the aid of the structures 16.

(11) FIG. 1b illustrates the inner side 13 of the strip-type substrate 10. The individual substrate units 11 are discernible in this case, too. The inner side 13 of the strip-type substrate 10 denotes that side of the strip-type substrate 10 on which the inner sides 13 of the individual substrate units 11 are formed. Semiconductor chips (not illustrated) are contacted directly or indirectly on the inner sides 13 of the respective substrate units 11. Contacting may be effected with the aid of bond wires.

(12) The foil used in association with the exemplary embodiments is a metal foil composed of a hard-rolled, austenitic high-grade steel. The thickness of the foil is 15 m to 35 m, specifically approximately 20 m. As a result, the total thickness of the package or of the chip card module may be reduced down to 200 m.

(13) FIG. 2 illustrates a schematic sectional illustration through the strip-type substrate 10. The substrate 10 comprises the inner side 13 for direct or indirect contacting with a semiconductor chip at least in sections, and the outer side 12, which is formed opposite the inner side 13 and parallel thereto in the example illustrated.

(14) A first layer 20 composed of nickel or a nickel alloy is formed at least in sections on the outer side 12.

(15) A second layer 21 composed of nickel or a nickel alloy is formed at least in sections on the illustrated inner side 13 as well.

(16) The nickel alloy may be for example a nickel-palladium alloy (NiPd) having a palladium proportion of 10.0 to 20.0%.

(17) In other words, the foil 15 is provided with a nickel or nickel alloy coating on the entire surface. The first layer 20 and the second layer 21 each have a layer thickness d.sub.1 and d.sub.2, respectively, of 1.0 to 2.0 m.

(18) A third layer 22 composed of silver or a silver alloy may be formed at least in sections on the second layer 21. In other words, the third layer 22 involves that side of the substrate unit 11 which faces the semiconductor chip (not illustrated). The third layer 22 has a layer thickness d.sub.3 of 1.0 to 2.0 m.

(19) As is evident in FIG. 1b, in particular, the third layer 22 is not applied completely on the inner side 13 of the strip-type substrate 10. In particular the conveying strips 31 having the conveying openings 30 are not provided with the third layer 22. It is thus possible to save silver material or silver alloy material.

(20) In the case of the chip card module according to the invention, a semiconductor chip is connected to a substrate unit 11 of the strip-type substrate 10. For this purpose, the semiconductor chip may be embedded in a potting compound.

(21) The production of a chip card module using the strip-type substrate 10 in accordance with FIGS. 1a and 1b is carried out as follows: firstly, a semiconductor chip is applied on an inner side 13 of a substrate unit 11 and is directly or indirectly connected to the inner side 13. In particular, the direct or indirect contacting is effected on the thin third layer 22 composed of silver or a silver alloy. By way of example, this may be carried out with the aid of bond wires. Afterward, the semiconductor chip and the bond wires are fixed by the application of a molding compound or potting compound, for example an epoxy resin. After the potting compound has been cured, it is fixedly connected to the respective substrate unit 11.

(22) Afterward, the structure may be electronically stamped free. Afterward, a functional test is carried out in order to be able to sort out defective modules. The chip card modules are then separated from the foil 15 for example by the removal of webs between the individual substrate units 11. The chip card modules thus produced may subsequently be installed.

(23) In the method for producing a strip-type substrate 10 having a plurality of substrate units 11 for further processing for manufacturing chip card modules, the foil 15 on high-grade steel is firstly provided with the structures 16 of the substrate units 11. The foil 15 is subsequently coated electrolytically with the first layer 20 and the second layer 21 composed of nickel or a nickel alloy.

(24) The foil 15 coated with nickel or a nickel alloy is subsequently coated with a third layer 22 composed of silver or a silver alloy at least in sections on the inner side 13.

(25) The substrate units 11 described or the chip card modules producible with the aid of the substrate units are particularly suitable for electronic devices such as chip cards. In particular, reference is made to dual interface cards in this context.

LIST OF REFERENCE SIGNS

(26) 10 strip-type substrate 11 substrate unit 12 outer side of substrate 12 outer side of substrate unit 13 inner side of substrate 13 inner side of substrate unit 15 foil 16 structure 20 first layer 21 second layer 22 third layer 30 conveying opening 31 conveying strip d.sub.1 thickness of first layer d.sub.2 thickness of second layer d.sub.3 thickness of third layer