Crystalline color-conversion device

Abstract

According to an embodiment, a crystalline color-conversion device includes an electrically driven first light emitter, for example a blue or ultraviolet LED, for emitting light having a first energy in response to an electrical signal. An inorganic solid single-crystal direct-bandgap second light emitter having a bandgap of a second energy less than the first energy is provided in association with the first light emitter. The second light emitter is electrically isolated from, located in optical association with, and physically connected to the first light emitter so that in response to the electrical signal the first light emitter emits first light that is absorbed by the second light emitter and the second light emitter emits second light having a lower energy than the first energy.

Claims

1. A method of making a crystalline color-conversion device, comprising: providing an electrically driven first light emitter for emitting first light having a first energy in response to an electrical current signal, wherein the electrically driven first light emitter is electrically connected to two or more electrical contacts that provide the electrical current signal to the first light emitter; providing an optically driven inorganic solid single-crystal direct-bandgap second light emitter having a bandgap of a second energy less than the first energy; and micro transfer printing the second light emitter from a source substrate onto the first light emitter or micro transfer printing the first light emitter from a source substrate onto the second light emitter so that the second light emitter (i) is electrically isolated from the first light emitter so that current passing through the first light emitter does not pass through the second light emitter, (ii) is located in optical association with the first light emitter, and (iii) is located within 0 to 250 microns of the first light emitter such that in response to the electrical signal the first light emitter emits first light that is absorbed by the second light emitter and the second light emitter emits second light having a lower energy than the first energy.

2. The method of claim 1, wherein the first light emitter and the second light emitter form a light-emitting conversion structure and the method comprises micro-transfer printing the light-emitting conversion structure from a source substrate onto a display substrate.

3. The method of claim 1, comprising forming an inorganic solid single-crystal direct-bandgap layer on a source substrate and disposing the first light emitter onto the inorganic solid single-crystal direct-bandgap layer.

4. The method of claim 3, comprising etching the layer to form a plurality of spatially separated crystalline color-conversion devices on the source substrate.

5. The method of claim 4, comprising micro transfer printing the crystalline color-conversion devices from the source substrate to a display substrate.

6. The method of claim 1, comprising providing an inorganic solid single-crystal direct-bandgap source substrate and disposing the first light emitters onto the source substrate.

7. The method of claim 6, comprising etching the source substrate to form a plurality of spatially separated crystalline color-conversion devices.

8. The method of claim 7, comprising micro transfer printing the plurality of crystalline color-conversion devices from the source substrate to a display substrate.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) The foregoing and other objects, aspects, features, and advantages of the present disclosure will become more apparent and better understood by referring to the following description taken in conjunction with the accompanying drawings, in which:

(2) FIG. 1 is a perspective of an embodiment of the present invention;

(3) FIG. 2 is a cross section of a bottom-emitter embodiment of the present invention;

(4) FIG. 3 is a cross section of an LED structure in accordance with embodiments of the present invention;

(5) FIG. 4 is a cross section of another embodiment of the present invention having additional material layers;

(6) FIG. 5 is a perspective of an embodiment of the present invention having an array of crystalline color-conversion devices;

(7) FIG. 6 is a cross section of a top-emitter embodiment of the present invention;

(8) FIG. 7 is a cross section of a structure in accordance with embodiments of the present invention;

(9) FIG. 8 is a cross section according to another embodiment of the present invention having three light emitters;

(10) FIG. 9 is a cross section of a structured light emitter according to an embodiment of the present invention;

(11) FIG. 10 is a cross section of an embodiment of the present invention including electrostatic gates;

(12) FIG. 11 is a cross section of an embodiment of the present invention including a heterostructure second light emitter; and

(13) FIGS. 12-13 are flow charts illustrating methods of the present invention.

(14) The features and advantages of the present disclosure will become more apparent from the detailed description set forth below when taken in conjunction with the drawings, in which like reference characters identify corresponding elements throughout. In the drawings, like reference numbers generally indicate identical, functionally similar, and/or structurally similar elements. The figures are not drawn to scale since the variation in size of various elements in the Figures is too great to permit depiction to scale.

DETAILED DESCRIPTION OF THE INVENTION

(15) Referring to FIG. 1, in an embodiment of the present invention a crystalline color-conversion device 5 includes an electrically driven first light emitter 10 for emitting light having a first energy in response to an electrical signal, for example from a controller (not shown), from a light-emitting area 11 within the first light emitter 10. An inorganic solid single-crystal direct-bandgap second light emitter 20 having a bandgap of a second energy less than the first energy is electrically isolated from the first light emitter 10, is located in optical association with the first light emitter 10, and is located within 0 to 250 microns of the first light emitter 10 so that in response to the electrical signal the first light emitter 10 emits first light that is absorbed by the second light emitter 20 and the second light emitter 20 emits second light having a lower energy than the first energy.

(16) As used herein, in optical association means that light from the first light emitter 10 is incident upon the second light emitter 20.

(17) As used herein located within 0 to 250 microns means that the first light emitter 10 can be in contact with the second light emitter 20 or within, for example, 10, 20, 50, 100, 200, or 250 microns of the second light emitter 20 such that the first light emitter 10 and the second light emitter 20 are separated by a distance from 0 to 250 microns, inclusive. In an embodiment in which the first light emitter 10 is separated from the second light emitter 20, the first light emitter 10 can be adhered to the second light emitter 20 by a thin, transparent adhesive layer. The thin, transparent adhesive layer can have a variable thickness but in any case serves to adhere the first light emitter 10 to the second light emitter 20 without undue absorption of light (e.g., adhesive layer is 80-100% transparent to visible or emitted light), for example the first light emitted by the first light emitter 10.

(18) As illustrated in FIG. 1, the crystalline color-conversion device 5 can be mounted on a substrate 30. The substrate 30 can be a transparent substrate 30 that is substantially transparent to the light emitted by the first or second light emitters 10, 20, for example 50%, 70%, 80%, 90%, or 95% transparent. The substrate 30 can be a polymer, plastic, resin, polyimide, PEN, PET, metal, metal foil, glass, a semiconductor, or sapphire.

(19) In various embodiments, the first light emitter 10 can be, for example, a light-emitting diode, a laser, a diode laser, or a vertical cavity surface emitting laser and can include known light-emitting diode materials and structures. The first light emitter 10 can also be an inorganic solid single-crystal direct bandgap light emitter. The first light emitter 10 can emit blue, violet, or ultra-violet light, and can emit either coherent or incoherent light. The light emitters used herein can have at least one of a width, length, and height from 2 to 5 m, 4 to 10 m, 10 to 20 m, or 20 to 50 m.

(20) In some embodiments, the second light emitter 20 is a crystal, a semiconductor crystal, or a doped semiconductor crystal. Dopants can include neodymium, chromium, erbium or ytterbium. The second light emitter 20 can include InGaN, bulk or quasi-bulk InGaN, InGaP, InGaAl phosphide, yttrium aluminum garnet, yttrium orthovanadate, beta barium borate, lithium triborate, bismuth triborate, or potassium titanyl phosphate. The second light emitters 20 can be devoid of arsenic, cadmium, or rare earths. The second light emitter 20 can be an optically pumped laser. In an embodiment, the second light emitter 20 emits second light that has a peak wavelength of 460 nm or less or emits red, yellow, green, cyan, or blue light. Because the second light emitted from the second light emitter 20 can be a very pure light and highly saturated, the second light can have a full width half max (FWHM) less than or equal to 50 nm or even less than or equal to 20 nm. Single-crystal direct bandgap semiconductor light emitters can be very efficient at both absorbing incident first light and effective at emitting lower frequency light. Hence, in an embodiment, the second light emitter is less than or equal to two microns thick, or even less than or equal to one micron thick.

(21) In an embodiment of the present invention, the second light emitter 20 has a composition different from the first light emitter 10. The crystal lattice structure of the first light emitter 10 can be different from the crystal lattice structure of the second light emitter 20. The second light emitter 20 can include surface passivation and light out-coupling structures. The surface passivation can be provided, for example, using atomic layer deposition (ALD) and can be only one or a few atoms thick. In embodiments, the refractive index of the second light emitter 20 is much greater than the refractive index of air and the use of light out-coupling or light-extraction structures can facilitate efficient light emission and reduce total internal reflection and heating.

(22) Referring to FIG. 2, a structure of the present invention includes a first light emitter 10 located within 0 to 250 microns of the second light emitter 20, for example in physical contact with the second light emitter 20 as shown. The second light emitter 20 is mounted on the substrate 30. In this embodiment, the first light emitter 10 is an LED formed with electrical contacts 14 on a side of the LED opposite the second light emitter 20. The electrical contacts 14 are electrically connected to conductive wires 18 insulated from the first light-emitter 10 by a dielectric 16. The electrical contacts 14 are driven by control signals, for example from an external controller (not shown), to control the LED to emit first light 60 having the first energy. The first light 60 is absorbed by the second light emitter 20 and the second light emitter 20 emits second light 62 that passes through the substrate 30 and can be viewed by an observer. Thus, the first light emitter 10 optically pumps the second light emitter 20. In an embodiment, a reflector 15 is located over the gap between the electrical contacts 14 and is electrically insulated from the electrical contacts 14 by the dielectric 16. In a further embodiment, a reflective layer (e.g., metal) is disposed at least partially over the second light emitter 20 to reflect light emitted by the first or second light emitters 10, 20 in undesirable directions.

(23) As shown in the embodiment of FIGS. 3 and 4, the first light emitter 10 is formed in layers, for example including a conduction layer 13 including a transparent doped semiconductor layer, to which is connected an electrical contact 14. The conduction layer 13 efficiently conducts current without emitting light to a light-emitting layer 12 that is also connected to an electrical contact 14. Electrical current flowing through the light-emitting layer 12 causes the light-emitting layer 12 to emit first light 60. The light-emitting layer 12 can also include multiple doped semiconductor sub-layers, for example n- and p-doped sub-layers doped in different amounts or with different dopants.

(24) The second light emitter 20 is located in optical association with and is physically located within 0 to 250 microns of the first light emitter 10. In the embodiment illustrated in FIGS. 1 and 2, the first light emitter 10 is within 0 microns of the second light emitter 20 so that the first light emitter 10 is in physical contact with and touches the second light emitter 20. In such an embodiment, the first and second light-emitters 10 and 20 are not separated by a vacuum or a gas and form a solid-state structure. In yet another embodiment of the crystalline color-conversion device 5 illustrated in FIG. 4, a material 22 that is at least partially transparent (for example 50%, 70%, 80%, 90%, 95%, or 100%) to the color of light emitted by the first light emitter 10 is located between and in physical contact with the first light emitter 10 and the second light emitter 20. The material 22 can be an adhesive, a curable adhesive, a resin, or a curable resin. In an embodiment, the material 22 is an optically clear adhesive (OCA). In a further embodiment and as shown in FIG. 4, the material 22 is also located between the second light emitter and the substrate 30.

(25) In an embodiment, the material 22 is formed in a layer that is substantially planar, is index matched to either or both of the first and second light emitters 10, 20, or does not change the direction of the first light 60 emitted from the first light emitter 10. In another embodiment, the material 22 does not form a lens or demonstrate total internal reflection or have a graded index through the layer of material 22. In a further embodiment, the material 22 layer includes sub-layers forming a dielectric stack. The sub-layers can have different or alternating refractive indices and can be selected to form an optical filter that transmits light emitted light from the first light emitter 10 but reflects light from the second light emitter 20, thereby improving the conversion and light output efficiency of the crystalline color-conversion device 5. Alternatively, one or more layers overlying both the first and second light emitters 10, 20, for example the dielectric insulator 16, serve to hold the first and second light emitters 10, 20 together. In an additional embodiment, an optical filter that can be a dielectric stack is disposed on a side of the second light emitter 20 opposite the first light emitter 10 that reflects light from the first light emitter 10 and transmits light emitted from the second light emitter 20.

(26) In another embodiment of the present invention, the second light emitter 20 incorporates a cavity such as a pocket, receptacle, recess, or hollowed-out portion into which the first light emitter 10 is disposed. The cavity serves as both a mechanical alignment feature when disposing the first light emitter 10 in optical association with the second light emitter 20 or when disposing the second light emitter 20 in optical association with the first light emitter 10. Locating the first light emitter 10 in the cavity of the second light emitter 20 also enables the second light emitter 20 to partially surround the first light emitter 10, so that more light emitted from the first light emitter 10 is converted by the second light emitter 20.

(27) In yet another embodiment of the present invention, the second light emitter 20 includes multiple inorganic direct-bandgap crystals that are disposed on multiple sides of the first light emitter 10 to partially surround the first light emitter 10, so that more light emitted from the first light emitter 10 is converted by the second light emitter 20. The multiple inorganic direct-bandgap crystals can be identical or different, or can have the same thickness or have different thicknesses. The different materials or sizes can produce light of different frequencies.

(28) Alternatively, multiple first light emitters 10 are located in optical association with a single second light emitter 20 so that light emitted by the first light emitters 10 is converted by the single second light emitter 20. The multiple first light emitters 10 can be identical or different, for example including different materials or having different sizes or are driven with different signals or at different time. Such structural alternatives can have mechanical advantages in alignment or disposition of the first and second light emitters 10, 20, improved light conversion efficiency, improved CRI, less flicker, increased power or light emitted from a single crystalline color-conversion device 5, or reduced costs in manufacturing. Such arrangements can also reduce failures if, for example either a second light emitter 20 fails or a first light emitter 10 fails.

(29) Referring next to FIG. 5, a crystalline color-conversion display 7 includes a plurality of the crystalline color-conversion devices 5 located on a display substrate 30, each having a first light emitter 10 and a corresponding second light emitter 20. The plurality of crystalline color-conversion devices 5 are distributed over or on the display substrate 30, for example in an array. Groups 40 of the crystalline color-conversion devices 5 including the first and second light emitters 10, 20 can form pixels or sub-pixels in the crystalline color-conversion display 7. Each of the plurality of first light emitters 10 can be the same kind of light emitter and have a common material and crystal lattice structure so that they have similar operating characteristics and can be provided and located on the substrate 30 in a common step. In a further embodiment, at least some of the second light emitters 20 are different from other second light emitters 20, for example so that they emit different colors of light. For example, at least one of the plurality of second light emitters 20 can emit red light, another one of the second light emitters 20 can emit green light, and a third one of the second light emitters 20 can emit blue light so that the crystalline color-conversion display 7 includes crystalline color-conversion devices 5R emitting red light, crystalline color-conversion devices 5G emitting green light, and crystalline color-conversion devices 5B emitting blue light. In another embodiment, at least one of the plurality of second light emitters 20 emits infrared light. Pixel groups 40 can include one each of the crystalline color-conversion devices 5R, 5G, and 5B to form multi-color pixels in the crystalline color-conversion display 7.

(30) In the embodiment illustrated in FIG. 2 the second light emitter 20 is between the substrate 30 and the first light emitter 10 and emits light through the substrate 30 in a bottom-emitter configuration. In an alternative top-emitter configuration illustrated in FIG. 6, the first light emitter 10 is located between the substrate 30 and the second light emitter 20. As shown in FIG. 6, the conductive wires 18 can be formed on the substrate 30 and the first light emitter 10 located over the patterned conductive wires 18 to electrically connect the electrical contacts 14 to the conductive wires 18. The electrical contacts 14 have different thicknesses to facilitate electrical connections from the electrical contacts to the patterned conductive wires on the substrate 30. The dielectric 16 protects and insulates the structure. The second light emitter 20 is in contact with the first light emitter 10 and, as shown in FIG. 7, when stimulated by a current supplied through the electrical contacts 14, the first light emitter 10 emits first light 60 at least a portion of which is absorbed by the second light emitter 20. In response to the first light 60, the second light emitter 20 emits second light 62.

(31) In a further embodiment of the present invention, the first light emitter 10 emits white light, for example a white-light LED. Such solid-state white-light emitters typically emit at least two different colors, for example blue and yellow, and can themselves include color-change materials, such as phosphors. Thus, in such an embodiment the first light emitter 10 also emits third light of a third energy less than the second energy and the light of the third energy passes through the second light emitter 20. As illustrated in FIG. 7, low-energy pump light 61 emitted from the first light emitter 10 passes through the second light emitter 20 and can be viewed by an observer. Higher-energy light (first light 60) can be absorbed by the second light emitter 20 and is emitted as a lower energy light (second light 62 having the second energy). Using this method, a wider variety of colors can be formed or the use of expensive or hard-to-find single-crystal direct-bandgap materials avoided.

(32) In an embodiment of the present invention, the second light emitter 20 has a thickness large enough to convert substantially all incident light having an energy greater than the second energy, for example from the first light emitter 10, to light of the second energy. In another embodiment, the second light emitter 20 has a thickness chosen to convert a pre-determined fraction of the incident light having an energy greater than the second energy, for example first energy light from the first light emitter 10, to light of the second energy. Thus, light having a pre-determined combination of different colors (the first energy light and the second energy light) is emitted.

(33) In alternative embodiments, the second light emitters 20 have a variation in thickness, for example made with templated epitaxial structures, or holes, using photolithographic methods. This variable thickness can result in multi-color light output. In such an embodiment, illustrated in FIG. 8, the second light emitter 20 has at least a first portion having a first thickness T1 and a second portion having a second thickness T2 less than the first thickness T1. The first thickness T1 is large enough to convert substantially all incident light (e.g. First light 60 emitted from the first light emitter 10) having an energy greater than the second energy to light of the second energy (second light 62). The second thickness T2 is small enough that a substantial amount of incident light (e.g. First light 60) having an energy greater than the second energy is not converted to light of the second energy and is emitted directly from the second light emitter 20, as shown. Again, light having a pre-determined combination of different colors (the first energy light and the second energy light) is emitted. In another embodiment of the present invention, the second light emitter 20 includes a light-extraction structure on or in a surface of the second light emitter 20 to reduce the quantity of trapped light in the second light emitter. Such structured second light emitters 20 can be made photolithographically.

(34) Referring to FIG. 9, in an alternative structure according to the present invention, the crystalline color-conversion device 5 includes an inorganic solid single-crystal direct-bandgap third light emitter 28 having a bandgap of a third energy less than the first energy and that is electrically isolated from the first light emitter 10. In one embodiment, the third light emitter 28 is located in optical association with the first light emitter 10 and is located within 0 to 250 microns of the first light emitter 10 so that in response to the electrical signal the first light emitter 10 emits first light that is absorbed by the third light emitter 28 and the third light emitter 28 emits third light having a lower energy than the first energy. The third light emitter can receive light emitted directly from the first light emitter 10 without passing through the second light emitter 20 (not shown). In another embodiment, the third light emitter 28 has a bandgap of a third energy less than the second energy, the third light emitter 28 is located in optical association with the second light emitter 20, and third light emitter 28 is located within 0 to 250 microns of the second light emitter 20 so that light emitted by the second light emitter 20 is absorbed by the third light emitter 28 and the third light emitter 28 emits third light having a lower energy than the second energy. By employing a third light emitter 28 in various structural arrangements, a broader range of frequencies are emitted by the crystalline color-conversion device 5, providing improved CRI.

(35) As shown in FIG. 9, in an embodiment of the crystalline color-conversion device 5 of the present invention, an inorganic solid single-crystal direct-bandgap third light emitter 28 having a bandgap of a third energy less than the first energy is located on a side of the second light emitter 20 opposite the first light emitter 10. Various combinations of bandgap energies in the first, second, and third light emitters 10, 20, 28 and different thicknesses of the second and third light emitters 20, 28 can result in different combinations and quantities of light emitted from the structure. In one embodiment, at least a portion of the second light 62 emitted by the second light emitter 20 in response to the first light 60 from the first light emitter 10 is converted by the third light emitter 28 to third light 64A. In another embodiment, at least a portion of the first light 60 from the first light emitter 10 passes through the second light emitter 20 and is converted by the third light emitter 28 and emitted as third light 64B. In another embodiment, at least a portion of the first light 60 is converted by the second light emitter 20 and passes through the third light emitter 28 and is emitted as second light 62A.

(36) Referring next to FIG. 10, in an embodiment of the present invention the crystalline color-conversion device 5 includes electrostatic gates 17 located on, over, under, or adjacent to near-edge regions of the second light emitter 20. In embodiments, the electrostatic gate 17 can be in contact with the second light emitter 20 or separated from the second light emitter by the dielectric 18. By placing a charge on the electrostatic gates 17, an electrical field is formed in the second light-emitter 20 that depletes carriers in the near-edge regions, thereby reducing non-radiative recombination. In an embodiment, the electrostatic gates 17 are electrically connected to one of the conductive wires 18 or, alternatively, the electrostatic gates 17 are electrically connected to a different charge source. Electrostatic gates 17 can be formed on the second light emitter 20 using photolithographic methods.

(37) As noted above, the second light emitter 20 can be a semiconductor. Referring to FIG. 11, in an embodiment the second light emitter 20 is a heterostructure 70 including two different semiconductor materials or two different semiconductor structures. Such a heterostructure can have, for example, a cladding layer 72 or passivation layer completely or at least partially surrounding an active photoluminescent layer 74. The cladding layer 72 can have a bandgap larger than the bandgap of the active photoluminescent layer 74. In an embodiment, the bandgap energy of the active photoluminescent layer 74 is lower than the bandgap energy of the first light emitter 10 and the bandgap energy of the cladding layer 72 is higher than the bandgap energy of the first light emitter 10 so that the first light 60 emitted by the first light emitter 10 is converted into emitted second light 62 by the photoluminescent layer 74 and not the cladding layer 72. In another embodiment, the bandgap energy of the cladding layer 72 is not higher than the bandgap energy of the first light emitter 10 but is sufficiently thin that relatively little of the first light 60 emitted by the first light emitter 10 is converted into emitted second light 62 by the cladding layer 72, for example the cladding layer 72 is thinner than the photoluminescent layer 74 as shown in FIG. 11. Such a heterostructure improves the efficiency of light emission.

(38) The cladding layer 72 or passivation layer increases color-conversion efficiency by suppressing non-radiative recombination of photo-generated electrons and holes at the free surfaces of the second light emitter 20. Free surfaces of the second light emitter 20 can contribute to non-radiative recombination (a parasitic effect) due to the presence of surface states, traps, and/or surface contamination. Cladding layers 72 or passivation layers reduce or eliminate the effects of one or more of those sources of non-radiative recombination. Some passivation layers (e.g., some dielectric materials deposited by atomic layer deposition with in-situ passivation immediately prior to growth) suppress non-radiative recombination by reducing or eliminating the density of interface states at the interfaces between the photoluminescent materials and the passivation materials. Some passivation layers, such as higher-bandgap semiconductor cladding layers 72, reduce non-radiative recombination by forming electrostatic barriers that keep photo-generated carriers from traversing the interface between the photoluminescent material and the cladding material.

(39) Core-shell nanoparticles are known as color-conversion materials that are more efficient than nano-particles without a cladding shell. Many classes of electronic or optoelectronic devices (e.g., yield-effect transistors or solar cells) rely on surface passivation for efficient operation. Embodiments of the present invention apply surface-passivation strategies to the color-conversion structures of the present invention described herein.

(40) A cladding layer 72 can be on one, some, or all sides of the second light emitter 20. In one embodiment, a cladding layer 72 is a planar epitaxial layer that has a bandgap energy higher than the bandgap energy of the photo-luminescent layer 74. In one embodiment the cladding layer 72 is InGaAlP, and the photo-luminescent layer is InGaP. In one embodiment the cladding layer 72 is InAlGaN, AlGaN, or InGaN having a higher bandgap than the photo-luminescent layer, and the photo-luminescent layer is InGaN having a lower bandgap than the cladding layer 72. In one embodiment, a cladding layer 72 is an epitaxial layer grown on the sidewalls and tops of mesas of a photoluminescent layer 74 as an epitaxial overgrowth (overgrowth refers to the second epitaxial process in the following sequence: form epitaxial materials in a first epitaxial process, do photolithography and etching or other micro-fabrication processes, then form more epitaxial materials in a second epitaxial (overgrowth) process). In some embodiments the tops and bottoms of the second light emitters 20 have cladding layers 72 and the sidewalls have no cladding or other passivation.

(41) In some embodiments the tops and bottoms of the second light emitters 20 have cladding layers formed by epitaxial deposition processes and the sidewalls have passivation formed by atomic layer deposition or other chemical vapor deposition. In some embodiments all sides of the second light emitters 20 are passivated by hetero-epitaxial cladding layers 72.

(42) In some embodiments one or more surfaces of the second light emitter 20 are passivated by ion processing. In an embodiment ion processing alters the electron- or hole-transport properties near one or more surfaces of the second light emitter 20 (e.g. the sidewalls) and inhibits trap-assisted non-radiative recombination there.

(43) A method of the present invention is illustrated in the flow chart of FIG. 12. In step 100 a display substrate 30 is provided, in step 105 first light emitters 10 such as micro-LEDs are provided, and in step 102 color-conversion crystals are provided. The display substrate 30, in some embodiments, is a polymer, plastic, resin, polyimide, PEN, PET, metal, metal foil, glass. The first light emitters 10 can be small inorganic light-emitting diodes or micro-LEDs. A discussion of micro-LEDs and micro-LED displays can be found in U.S. patent application Ser. No. 14/743,981, filed Jun. 18, 2015, entitled Micro Assembled Micro LED Displays and Lighting Elements, which is hereby incorporated by reference in its entirety. The display substrate 30, micro-LED first light emitters 10, and color-conversion crystal second light emitters 20 can all be provided at the same or at different times and in any order.

(44) Conductive wires 18 are formed on the display substrate 30 in step 110 and the micro-LED first light emitters 10 are located on the display substrate 30 in alignment with the conductive wires 18 in step 120, for example by micro-transfer printing. The color-conversion crystals are then located on the display substrate 30 within 0 to 250 microns of the micro-LEDs, in step 130, for example by micro-transfer printing the color-conversion crystals onto the micro-LEDs. This method can form a top-emitter structure, such as is shown in FIG. 6. Micro-transfer methods are described in U.S. Pat. Nos. 8,722,458, 7,622,367 and 8,506,867, each of which is hereby incorporated by reference.

(45) Alternatively, referring to the method of the present invention illustrated in the flow chart of FIG. 13, the step 130 of locating the color-conversion crystals is reversed with the step 120 of locating, for example by micro-transfer printing, the micro-LEDs and the step 110 of forming conductive wires 18 to electrically interconnect the micro-LEDs is performed after the micro-LEDs are located on the display substrate 30. This method can form a bottom-emitter structure, such as is shown in FIG. 2.

(46) In another embodiment of the present invention, the first light emitters 10 are micro transfer printed onto the second light emitters 20 to form a light-emitting crystalline color-conversion structure 5. The crystalline color-conversion structure 5 is then micro-transfer printed onto a display substrate 30.

(47) In an embodiment, a source substrate is provided, for example a semiconductor substrate that is an inorganic solid single-crystal direct-bandgap source substrate. The first light emitters 10 are micro transfer printed onto the source substrate, forming light-emitting crystalline color-conversion structures 5, and then the light-emitting crystalline color-conversion structures 5 are released from the source substrate, together with a portion of the source substrate forming the second light emitters 20 and micro transfer printed from the source substrate to a destination substrate, such as the display substrate 30. Structures useful for micro transfer printing, for example release layers, anchors, and tethers, can be formed in the source substrate before or after the first light emitters 10 are micro transfer printed onto the source substrate.

(48) In an alternative embodiment, an inorganic solid single-crystal direct-bandgap layer is formed on a source substrate and the first light emitters 10 are disposed, for example by micro transfer printing, onto the layer, forming spatially separated light-emitting crystalline color-conversion structures 5 on the source substrate, and then the light-emitting crystalline color-conversion structures 5 are released from the source substrate and printed onto a destination substrate, such as the display substrate 30. Structures useful for micro transfer printing, for example release layers, anchors, and tethers, can be formed in the source substrate before or after the first light emitters 10 are micro transfer printed onto the source substrate 30.

(49) In general, structures, features, and elements of the present invention can be made using photolithographic methods and materials found in the integrated circuit arts, the light-emitting diode arts, and the laser arts, for example including doped or undoped semiconductor materials, optically pumped crystals, conductors, passivation layer, electrical contacts, and controllers.

(50) In another embodiment, the crystalline color-conversion devices 5 are arranged on tile substrates that are then mounted on and interconnected to a backplane substrate to form a compound micro-assembly. Depending on the implementation, different number of crystalline color-conversion devices 5 are located on each tile substrate and interconnected. In various embodiments, control circuitry is located on the tile substrates or the backplane substrate. A discussion of compound micro-assembly structures and methods is provided in U.S. patent application Ser. No. 14/822,868 filed Aug. 10, 2015, entitled Compound Micro-Assembly Strategies and Devices, which is hereby incorporated by reference in its entirety.

(51) As is understood by those skilled in the art, the terms over and under are relative terms and can be interchanged in reference to different orientations of the layers, elements, and substrates included in the present invention. For example, a first layer on a second layer, in some implementations means a first layer directly on and in contact with a second layer. In other implementations a first layer on a second layer includes a first layer and a second layer with another layer there between.

(52) Having described certain implementations of embodiments, it will now become apparent to one of skill in the art that other implementations incorporating the concepts of the disclosure may be used. Therefore, the invention should not be limited to the described embodiment, but rather should be limited only by the spirit and scope of the following claims.

(53) Throughout the description, where apparatus and systems are described as having, including, or comprising specific components, or where processes and methods are described as having, including, or comprising specific steps, it is contemplated that, additionally, there are apparatus, and systems of the disclosed technology that consist essentially of, or consist of, the recited components, and that there are processes and methods according to the disclosed technology that consist essentially of, or consist of, the recited processing steps.

(54) It should be understood that the order of steps or order for performing certain action is immaterial so long as the disclosed technology remains operable. Moreover, two or more steps or actions in some circumstances can be conducted simultaneously. The invention has been described in detail with particular reference to certain embodiments thereof, but it will be understood that variations and modifications can be effected within the spirit and scope of the invention.

PARTS LIST

(55) T1 first thickness T2 second thickness 5 crystalline color-conversion device 5R crystalline color-conversion device 5G crystalline color-conversion device 5B crystalline color-conversion device 7 crystalline color-conversion display 10 first light emitter 11 light-emitting area 12 light-emitting layer 13 conduction layer 14 electrical contact 15 reflector 16 dielectric insulator 17 elecrostatic gate 18 conductive wire 20 second light emitter 22 material 28 third light emitter 30 substrate/display substrate 40 group/pixel group 60 first light 61 low-energy pump light 62 second light 62A second light 62B second light 64A third light 64B third light 70 semiconductor heterostructure 72 cladding layer 74 active luminescent layer 100 provide display substrate step 102 provide color-conversion crystals step 105 provide light emitters step 110 form wires on substrate step 120 print micro-LEDs on display substrate step 130 locate color-conversion crystals on micro-LEDs step